JP2008255327A - 熱硬化性光反射用樹脂組成物、光半導体素子搭載用基板とその製造方法および光半導体装置 - Google Patents
熱硬化性光反射用樹脂組成物、光半導体素子搭載用基板とその製造方法および光半導体装置 Download PDFInfo
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- JP2008255327A JP2008255327A JP2007307292A JP2007307292A JP2008255327A JP 2008255327 A JP2008255327 A JP 2008255327A JP 2007307292 A JP2007307292 A JP 2007307292A JP 2007307292 A JP2007307292 A JP 2007307292A JP 2008255327 A JP2008255327 A JP 2008255327A
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- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
【解決手段】(A)エポキシ樹脂、(B)硬化剤、(C)硬化触媒、(D)無機充填剤、(E)白色顔料、および(F)カップリング剤を含む樹脂組成物において、(D)無機充填剤および(E)白色顔料の少なくとも一方の成分として、多孔質充填剤または吸油性を有する化合物を含む、熱硬化性光反射用樹脂組成物、ならびに当該樹脂組成物を用いた光半導体素子搭載用基板とその製造方法および光半導体装置を提供する。
【選択図】図4
Description
また、上記(D)無機充填剤と上記(E)白色顔料の合計含有量は、樹脂組成物全体に対して、10体積%〜85体積%の範囲であることが好ましい。合計含有量が10体積%未満であると硬化物の光反射特性が十分得られない傾向にあり、85体積%を超えると樹脂組成物の成型性が悪くなり、基板の作製が困難となる傾向にある。
1.熱硬化性光反射用樹脂組成物の調製
表1に示した配合表に従って各成分を配合し、ミキサーによって十分混練した後、ミキシングロールにより所定条件で溶融混練し、冷却、粉砕を行い、実施例1〜5および比較例1〜3の熱硬化性光反射用樹脂組成物を調製した。なお、表中の各成分の配合量の単位は重量部であり、空欄は配合無しを表す。
各実施例及び各比較例の樹脂組成物について、下記試験方法により硬化物の光反射性とタブレット成型性を評価した。結果を表1に示す。
各実施例及び各比較例の樹脂組成物を、成型型温度180℃、成型圧力6.9MPa、キュア時間90秒の条件でトランスファー成型した後、150℃で2時間ポストキュアすることにより、厚み1.0mmのテストピースを作製した。ついで、積分球型分光光度計V−750型(日本分光株式会社製)にて波長400nmにおける光反射率を測定し、下記の評価基準により各テストピースの光反射性を評価した。
・評価基準
○:光波長400nmにおいて光反射率80%以上
△:光波長400nmにおいて光反射率70%以上80%未満
×:光波長400nmにおいて光反射率70%未満
材質がアルミナで樹脂との接触表面が超硬合金である杵型と臼型の一対から構成された成型金型を用い(図1を参照)、各実施例及び各比較例の樹脂組成物を、室温(25℃)、成型圧力5MPa、10MPa、30MPa、3秒間の各条件下で加圧成型し、タブレットを作製した。
その後、樹脂組成物の杵表面への張り付きおよびそれによるタブレットの破壊、ならびに得られたタブレットのひび割れを下記の評価基準により評価した。
・樹脂組成物の張り付き、タブレットの破壊の評価基準
○:目視にて張り付き、タブレットの破壊が確認できない。
×:目視にて張り付き、タブレットの破壊が認められる。
・タブレットのひび割れの評価基準
○:目視にてタブレットのひび割れが確認できない。
×:目視にてタブレットのひび割れが認められる。
表1における各成分の詳細は以下のとおりである。
(2)ヘキサヒドロ無水フタル酸:和光純薬株式会社製、エポキシ基と反応可能な活性基当量154
(3)テトラ−n−ブチルホスホニウム−o,o−ジエチルホスホロジチオエート:日本化学工業株式会社製、商品名「PX−4ET」
(4)トリメトキシエポキシシラン:東レダウコーニング株式会社製、商品名「A−187」
(5)脂肪酸エステル(クラリアント株式会社製、商品名「ヘキストワックスE」)
(6)脂肪族エーテル(東洋ペトロライト株式会社製、商品名「ユニトックス420」)
(7)溶融球状シリカ1(電気化学工業株式会社製、商品名「FB−950」)
(8)溶融球状シリカ2(電気化学工業株式会社製、商品名「FB−301」)
(9)結晶破砕状シリカ(電気化学工業株式会社製、商品名「FS30」
(10)中空粒子(住友3M株式会社製、商品名「S60−HS」、ホウ珪酸ガラス)
(11)アルミナ(アドマテックス株式会社製、商品名「AO−25R」)
(12)多孔質球状シリカ(富士シリシア化学株式会社製、商品名「サイロスフィアC−1504」、平均粒径3μm、見掛け密度0.58g/ml、比表面積300m2/g)
(13)多孔質無定形状シリカ(富士シリシア化学株式会社製、商品名「サイロホービック702」、平均粒径4μm、見掛け密度0.48g/ml、比表面積300m2/g)
(14)多孔質無定形状シリカ(富士シリシア化学株式会社製、商品名「サイリシア435」、平均粒径4μm、見掛け密度0.48g/ml、比表面積300m2/g)
2 上杵型
3 下杵型
4 タブレット(樹脂組成物)
5 杵型に付着した樹脂組成物
100 光半導体素子(LED素子)
101 透明封止樹脂
102 ボンディングワイヤ
103 熱硬化性光反射用樹脂組成物からなるリフレクター
104 Ni/Agめっき
105 金属配線
106 蛍光体
107 はんだバンプ
110 光半導体素子搭載用基板
200 光半導体素子搭載領域(凹部)
300 樹脂注入口
301 トランスファー成型用金型
400 LED素子
401 ボンディングワイヤ
402 透明封止樹脂
403 リフレクター
404 リード
405 蛍光体
406 ダイボンド材
Claims (14)
- (A)エポキシ樹脂、(B)硬化剤、(C)硬化触媒、(D)無機充填剤、(E)白色顔料、および(F)カップリング剤を含む樹脂組成物において、前記(D)無機充填剤および前記(E)白色顔料の少なくとも一方の成分として、多孔質充填剤または吸油性を有する化合物を含むことを特徴とする熱硬化性光反射用樹脂組成物。
- 前記多孔質充填剤または吸油性を有する化合物の形状が、真球状、破砕状、円盤状、棒状、繊維状からなる群の中から選ばれる少なくとも1種であることを特徴とする請求項1に記載の熱硬化性光反射用樹脂組成物。
- 前記多孔質充填剤または吸油性を有する化合物が、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、水酸化アルミニウム、水酸化マグネシウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウム、ゼオライト、ノルボルネンゴム、アクリロニトリル・ブタジエン・スチレン共重合樹脂からなる群の中から選ばれる少なくとも1種であることを特徴とする請求項1または2に記載の熱硬化性光反射用樹脂組成物。
- 前記多孔質充填剤または吸油性を有する化合物の表面が、疎水化処理または親水化処理されていることを特徴とする請求項1〜3のいずれかに記載の熱硬化性光反射用樹脂組成物。
- 前記多孔質充填剤または吸油性を有する化合物の見掛け密度が、0.4g/cm3以上であることを特徴とする請求項1〜4のいずれかに記載の熱硬化性光反射用樹脂組成物。
- 前記(D)無機充填剤および前記(E)白色顔料の合計量を基準として、前記多孔質充填剤または吸油性を有する化合物の含有量が、0.1体積%〜20体積%の範囲であることを特徴とする請求項1〜5のいずれかに記載の熱硬化性光反射用樹脂組成物。
- 前記(D)無機充填剤が、多孔質構造または吸油性を持たないシリカ、水酸化アルミニウム、水酸化マグネシウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群の中から選ばれる少なくとも1種を含むことを特徴とする請求項1〜6のいずれかに記載の熱硬化性光反射用樹脂組成物。
- 前記(E)白色顔料が、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、無機中空粒子からなる群の中から選ばれる少なくとも1種であることを特徴とする請求項1〜7のいずれかに記載の熱硬化性光反射用樹脂組成物。
- 前記(E)白色顔料の平均粒径が、0.1〜50μmの範囲にあることを特徴とする請求項1〜8のいずれかに記載の熱硬化性光反射用樹脂組成物。
- 前記(D)無機充填剤と前記(E)白色顔料の合計含有量が、樹脂組成物全体に対して、10体積%〜85体積%の範囲であることを特徴とする請求項1〜9のいずれかに記載の熱硬化性光反射用樹脂組成物。
- 請求項1〜10のいずれかに記載の熱硬化性光反射用樹脂組成物を用いてなることを特徴とする光半導体素子搭載用基板。
- 光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板であって、少なくとも前記凹部の内周側面が請求項1〜10のいずれかに記載の光反射用熱硬化性樹脂組成物からなることを特徴とする光半導体素子搭載用基板。
- 光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板の製造方法であって、少なくとも前記凹部を請求項1〜10のいずれかに記載の光反射用熱硬化性樹脂組成物を用いたトランスファー成型により形成することを特徴とする光半導体搭載用基板の製造方法。
- 請求項12に記載の光半導体素子搭載用基板と、
前記光半導体素子搭載用基板の凹部底面に搭載された光半導体素子と、
前記光半導体素子を覆うように前記凹部内に形成された蛍光体含有透明封止樹脂層と、
を少なくとも備える光半導体装置。
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JP6247599B2 (ja) | 2017-12-13 |
JP2013021342A (ja) | 2013-01-31 |
JP5125450B2 (ja) | 2013-01-23 |
JP2014225675A (ja) | 2014-12-04 |
JP5727977B2 (ja) | 2015-06-03 |
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