JP2008251978A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of completing substrate processing in a single processing chamber by absolutely preventing accidental mixing of chemical liquids, even if a combination of a plurality of kinds of chemical liquids to be used for substrate processing may involve danger of accidental mixing. <P>SOLUTION: A memory previously stores information for identifying a most recently opened valve (finally opened valve). In opening a new valve, the information for identifying the finally opened valve stored in the memory is referenced prior to opening the valve. If accidental mixing of first, second and third chemical liquids may be caused in a processing chamber 2 in such a case that the supply of the first chemical liquid to the substrate is followed by the supply of the second chemical liquid, the valve is prohibited from being newly opened. Thus, accidental mixing of the first, second and third chemical liquids in the processing chamber 2 can be prevented absolutely. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for substrate processing using a plurality of types of chemical solutions. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photo A mask substrate is included.

A manufacturing process of a semiconductor device or a liquid crystal display device includes a cleaning process for removing contaminants from a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel.
In this cleaning process, a plurality of types of chemical solutions may be used. When the combination of multiple types of chemicals is a combination that involves danger in contact, the processing chamber is usually changed for each chemical and the substrate is processed with each chemical to ensure that the chemicals are not mixed. Is done. For example, when aqua regia and sulfuric acid come into contact with each other, bumping occurs due to a violent exothermic reaction, and chlorine gas is generated as a reaction product. Therefore, in the cleaning process using aqua regia and sulfuric acid, the substrate is treated with aqua regia in a processing chamber for aqua regia, and the substrate is treated with sulfuric acid in a sulfuric acid treatment chamber different from the processing chamber. Is implemented.

However, even if the combination of a plurality of types of chemical solutions used in the cleaning process is a combination that involves danger in contact, there is a case where it is desired to complete the cleaning process in one processing chamber in order to improve productivity. is there. In order to meet this demand, not only the inside of the processing chamber but also the drainage pipe connected to the processing chamber and the supply pipe connected to the nozzle for supplying the chemical to the substrate are reliably prevented from being mixed. Must.
JP 2007-48983 A

  Therefore, an object of the present invention is to reliably prevent contact of these chemical solutions even if the combination of a plurality of types of chemical solutions used for substrate processing is a combination that causes danger in contact. It is to provide a substrate processing apparatus that can be completed in one processing chamber.

  In order to achieve the above object, the invention according to claim 1 is the first chemical supply means (18, 23) for supplying the first chemical to the processing chamber (2) and the substrate (W) in the processing chamber. A second chemical solution supply means (19, 25; 20, 31) for supplying a second chemical solution different from the first chemical solution to the substrate in the processing chamber, and a rinsing liquid on the substrate in the processing chamber Rinsing liquid supply means (21, 37) for supplying, supply operation control means (60) for controlling each supply operation of the first chemical liquid supply means, the second chemical liquid supply means, and the rinse liquid supply means; Final supply storage means (61) for storing which of the first chemical liquid supply means, the second chemical liquid supply means and the rinse liquid supply means has been controlled in the past by the supply operation control means; Before by feed operation control means Prior to the control of the supply operation of the first chemical solution supply means or the second chemical solution supply means, the storage contents of the final supply storage means are referred to, and subsequently to the supply operation of the first chemical solution supply means, the second chemical solution When the supply operation of the supply means is to be controlled, or when the supply operation of the first chemical liquid supply means is to be controlled following the supply operation of the second chemical liquid supply means, the The substrate processing apparatus (1) includes a control prohibiting unit (60) for prohibiting the control of the supply operation by the supply operation control unit.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, the last supply storage means stores which of the first chemical liquid supply means, the second chemical liquid supply means, and the rinse liquid supply means has been controlled most recently. Prior to the control of the supply operation of the first chemical solution supply unit or the second chemical solution supply unit by the supply operation control unit, the storage contents of the final supply storage unit are referred to by the control prohibiting unit. Then, when the supply operation of the second chemical liquid supply means is controlled following the supply operation of the first chemical liquid supply means, or following the supply operation of the second chemical liquid supply means, the first chemical liquid supply means If the supply operation is to be controlled, control of the new supply operation is prohibited. As a result, the second chemical solution is supplied to the substrate in the processing chamber or the pipe connected to the processing chamber or the processing chamber with the first chemical solution attached to the processing chamber or the piping connected to the processing chamber. The first chemical solution is not supplied to the substrate in the processing chamber with the two chemical solutions attached. Therefore, it is possible to reliably prevent contact between the first chemical solution and the second chemical solution in the processing chamber and the pipe connected to the processing chamber. As a result, substrate processing using the first chemical solution and the second chemical solution can be completed in one processing chamber.

  The invention according to claim 2 is a continuation time measuring means (64) for measuring a time during which the supply operation of the rinsing liquid supply means is continuously executed, and the rinsing liquid supply means in the final supply storage means. Is stored in the last supply operation, and the time measured by the duration measuring means during the most recent supply operation is equal to or longer than a predetermined time, the last supply storage means Storage erasure means (60) for erasing the stored content, wherein the control prohibiting means stores in the final supply storage means that the supply operation of the rinse liquid supply means has been controlled in the past, and When the supply operation of the first chemical solution supply device or the second chemical solution supply device is controlled following the supply operation of the rinse solution supply device, the control of the supply operation is prohibited. Wherein a substrate processing apparatus according to claim 1.

  According to this configuration, it is stored in the final supply storage means that the supply operation of the rinse liquid supply means has been controlled in the past, and the supply operation of the rinse liquid supply means is predetermined for the previous supply operation. When continuously executed as described above, the stored contents of the final supply storage means are erased. If the supply operation of the rinsing liquid supply means is continuously executed for a predetermined time or longer, the first chemical liquid or the second chemical liquid is surely washed out from the processing chamber or the pipe connected to the processing chamber with the rinsing liquid. In addition, even if the first chemical solution or the second chemical solution is supplied to the substrate in the processing chamber, the first chemical solution and the second chemical solution are not mixed in the processing chamber or the pipe connected to the processing chamber. On the other hand, after the first chemical solution or the second chemical solution is supplied to the substrate, if the supply operation of the rinsing liquid supply means is not continuously executed for a predetermined time or longer, the processing chamber or the pipe connected to the processing chamber If the first chemical liquid or the second chemical liquid remains and the first chemical liquid or the second chemical liquid is supplied thereafter, the first chemical liquid and the second chemical liquid may be mixed. Therefore, even if the supply operation of the first chemical solution supply unit or the second chemical solution supply unit is controlled following the supply operation of the rinse solution supply unit, the supply operation of the rinse solution supply unit continues for a predetermined time or more. If not, the control of the supply operation of the first chemical solution supply means or the second chemical solution supply means is prohibited. Thereby, it is possible to prevent the first chemical liquid and the second chemical liquid from being mixed with each other more reliably, and the substrate processing using the first chemical liquid and the second chemical liquid can be safely completed in one processing chamber.

  According to a third aspect of the present invention, there is provided the processing chamber (2), first chemical liquid supply means (18, 23) for supplying a first chemical liquid to the substrate in the processing chamber, and the first chemical liquid on the substrate in the processing chamber. Second chemical liquid supply means (19, 25; 20, 31) for supplying a second chemical liquid of a type different from the chemical liquid, and rinse liquid supply means (21, 25) for supplying a rinse liquid to the substrate in the processing chamber 37), a supply operation control means (60) for controlling each supply operation of the first chemical liquid supply means, the second chemical liquid supply means and the rinse liquid supply means, and a control sequence of the supply operation by the supply operation control means A recipe input means (63) for inputting a recipe that defines the recipe, a recipe storage means (61) for storing the recipe input from the recipe input means, and the supply operation according to the recipe input from the recipe input means control In the virtual execution process in which the control by the stage is virtually executed, any one of the supply operations of the first chemical solution supply unit, the second chemical solution supply unit, and the rinse solution supply unit is controlled by the supply operation control unit in the past. Final supply storage means (61) for storing the high pressure, and in the virtual execution process, the supply operation control means controls the supply operation of the first chemical liquid supply means, the second chemical liquid supply means or the rinse liquid supply means. Prior to referring to the stored contents of the final supply storage means, the supply operation of the second chemical solution supply means is controlled following the supply operation of the first chemical solution supply means, or the first When the supply operation of the first chemical solution supply means is to be controlled following the supply operation of the two chemical solution supply means, the input from the recipe input means is performed. It characterized in that it comprises a recipe storage prohibiting means for prohibiting the storing of the said recipe storage unit Pi (60), a substrate processing apparatus.

  According to this configuration, according to the recipe input from the recipe input means, control of each supply operation of the first chemical liquid supply means, the second chemical liquid supply means, and the rinse liquid supply means by the supply operation control means is virtually executed. . In this virtual execution process, prior to the control of the supply operation of the first chemical solution supply unit or the second chemical solution supply unit by the supply operation control unit, the storage content of the final supply storage unit is referred to by the control prohibiting unit. The final supply storage means stores which of the first chemical liquid supply means, the second chemical liquid supply means, and the rinse liquid supply means has been controlled most recently. Then, when the supply operation of the second chemical liquid supply means is controlled following the supply operation of the first chemical liquid supply means, or following the supply operation of the second chemical liquid supply means, the first chemical liquid supply means When the supply operation is controlled, storage of the recipe input from the recipe input means in the recipe storage means is prohibited. Thereby, according to the recipe memorize | stored in the recipe memory | storage means, when control of each supply operation | movement of the 1st chemical | medical solution supply means by the supply operation control means, a 2nd chemical | medical solution supply means, and a rinse liquid supply means is actually performed, a process The second chemical solution is supplied to the substrate in the processing chamber or the second chemical solution adheres to the piping connected to the processing chamber or the processing chamber with the first chemical solution adhering to the piping connected to the processing chamber or the processing chamber. In this state, it is possible to reliably prevent the first chemical solution from being supplied to the substrate in the processing chamber. Therefore, it is possible to reliably prevent contact between the first chemical solution and the second chemical solution in the processing chamber and the pipe connected to the processing chamber. As a result, substrate processing using the first chemical solution and the second chemical solution can be completed in one processing chamber.

  The invention according to claim 4 is characterized in that, in the virtual execution process, duration measurement means (64) for measuring a time during which the supply operation of the rinse liquid supply means is continuously executed, and in the virtual execution process, the The final supply storage means stores that the supply operation of the rinse liquid supply means has been controlled in the past, and the time measured by the duration measurement means during the most recent supply operation is a predetermined time or more. In some cases, a storage erasure unit (60) for erasing the stored contents of the final supply storage unit, and the recipe storage prohibition unit includes the rinse liquid supply unit in the final supply storage unit in the virtual execution process. It is stored that the supply operation has been controlled most recently, and following the supply operation of the rinse liquid supply means, the first chemical solution supply means or the first 4. The substrate processing apparatus according to claim 3, wherein when the supply operation of the chemical solution supply unit is controlled, storage of the recipe input from the recipe input unit into the recipe storage unit is prohibited. .

  According to this configuration, in the virtual execution process, it is stored in the final supply storage means that the supply operation of the rinse liquid supply means has been controlled in the past, and the supply of the rinse liquid supply means during the latest supply operation is performed. When the operation is continuously executed for a predetermined time or more, the stored contents of the final supply storage means are erased. If the supply operation of the rinsing liquid supply means is continuously executed for a predetermined time or longer, the first chemical liquid or the second chemical liquid is surely washed out from the processing chamber or the pipe connected to the processing chamber with the rinsing liquid. In addition, even if the first chemical solution or the second chemical solution is supplied to the substrate in the processing chamber, the first chemical solution and the second chemical solution are not mixed in the processing chamber or the pipe connected to the processing chamber. On the other hand, after the first chemical solution or the second chemical solution is supplied to the substrate, if the supply operation of the rinsing liquid supply means is not continuously executed for a predetermined time or longer, the processing chamber or the pipe connected to the processing chamber If the first chemical liquid or the second chemical liquid remains and the first chemical liquid or the second chemical liquid is supplied thereafter, the first chemical liquid and the second chemical liquid may be mixed. Therefore, even if the supply operation of the first chemical solution supply unit or the second chemical solution supply unit is controlled following the supply operation of the rinse solution supply unit, the supply operation of the rinse solution supply unit continues for a predetermined time or more. In the case where it is not automatically executed, storage of the recipe input from the recipe input means in the recipe storage means is prohibited. Thus, when the control of each supply operation of the first chemical liquid supply means, the second chemical liquid supply means, and the rinse liquid supply means by the supply operation control means is actually executed according to the recipe stored in the recipe storage means. It is possible to more reliably prevent the contact between the first chemical liquid and the second chemical liquid. As a result, the substrate processing using the first chemical solution and the second chemical solution can be safely completed in one processing chamber.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a sectional view conceptually showing the structure of a substrate processing apparatus according to an embodiment of the present invention.
The substrate processing apparatus 1 uses the first chemical solution, the second chemical solution, the third chemical solution, and DIW (deionized water) to remove contaminants from a semiconductor wafer W (hereinafter simply referred to as “wafer W”) that is an example of a substrate. It is an apparatus for executing a cleaning process for removal. The substrate processing apparatus 1 includes a spin chuck 3 for holding and rotating a wafer W substantially horizontally in a processing chamber 2 partitioned by a partition wall (not shown), and a wafer W held on the spin chuck 3. A first chemical solution nozzle 4 for supplying a first chemical solution to the surface (upper surface) of the substrate, a second chemical solution nozzle 5 for supplying a second chemical solution to the surface of the wafer W held by the spin chuck 3, and a spin chuck And a third chemical nozzle 6 for supplying a third chemical liquid to the surface of the wafer W held by 3 and a DIW nozzle 7 for supplying DIW to the surface of the wafer W held by the spin chuck 3. Yes.

  The spin chuck 3 includes a spin shaft 8 that extends substantially vertically, a spin base 9 that is attached to the upper end of the spin shaft 8 in a substantially horizontal posture, and a plurality of clamping members 10 that are disposed on the peripheral edge of the spin base 9. I have. The plurality of clamping members 10 are arranged at substantially equal angular intervals on a circumference centered on the central axis of the spin shaft 8. Each holding member 10 is brought into contact with the end face of the wafer W, and the wafer W is held by the plurality of holding members 10, whereby the wafer W is held in a substantially horizontal posture, and the center of the wafer W is the center of the spin shaft 8. Arranged on the axis.

A rotational force is input to the spin shaft 8 from a chuck rotation mechanism 11 including a motor (not shown). By inputting this rotational force, the spin shaft 8 rotates, and the wafer W sandwiched between the sandwiching members 10 rotates around the central axis of the spin shaft 8 together with the spin base 9.
A back surface treatment liquid supply pipe 12 is inserted into the spin shaft 8 so as to be relatively rotatable. The upper end of the back surface treatment liquid supply pipe 12 is connected to a back surface nozzle 13 provided at the upper end of the spin shaft 8. Further, from the first chemical solution back side supply pipe 14 to which the first chemical solution is supplied from the first chemical solution cabinet 65 (see FIG. 2) and the second chemical solution cabinet 66 (see FIG. 2). A second chemical back side supply pipe 15 to which the second chemical liquid is supplied, a third chemical back side supply pipe 16 to which the third chemical liquid is supplied from the third chemical liquid cabinet 67 (see FIG. 2), and a DIW supply line (FIG. A DIW rear surface side supply pipe 17 to which DIW is supplied from (not shown) is connected.

A first chemical back surface side valve 18 is interposed in the first chemical back surface supply pipe 14. A second chemical liquid back surface side valve 19 is interposed in the second chemical liquid back surface side supply pipe 15. A third chemical back surface side valve 20 is interposed in the third chemical back surface supply pipe 16. A DIW rear surface side valve 21 is interposed in the DIW rear surface side supply pipe 17.
When the first chemical back side valve 18 is opened with the second chemical back side valve 19, the third chemical back side valve 20 and the DIW back side valve 21 closed, the back side from the first chemical back side supply pipe 14 is opened. The first chemical liquid is supplied to the processing liquid supply pipe 12. The first chemical liquid supplied to the back surface treatment liquid supply pipe 12 is supplied to the back surface nozzle 13 through the back surface treatment liquid supply pipe 12 and is discharged upward from the back surface nozzle 13. The first chemical solution can be supplied to the back surface (lower surface) of the wafer W by discharging the first chemical solution from the back surface nozzle 13 while the wafer W is held on the spin chuck 3.

  When the second chemical back side valve 19 is opened with the first chemical back side valve 18, the third chemical back side valve 20 and the DIW back side valve 21 closed, the back side from the second chemical back side supply pipe 15 is opened. The second chemical liquid is supplied to the processing liquid supply pipe 12. The second chemical liquid supplied to the back surface treatment liquid supply pipe 12 is supplied to the back surface nozzle 13 through the back surface treatment liquid supply pipe 12 and is discharged upward from the back surface nozzle 13. The second chemical liquid can be supplied to the back surface of the wafer W by discharging the second chemical liquid from the back nozzle 13 while the wafer W is held on the spin chuck 3.

  When the third chemical back side valve 20 is opened with the first chemical back side valve 18, the second chemical back side valve 19 and the DIW back side valve 21 closed, the back side from the third chemical back side supply pipe 16 is opened. The third chemical liquid is supplied to the processing liquid supply pipe 12. The third chemical liquid supplied to the back surface treatment liquid supply pipe 12 is supplied to the back surface nozzle 13 through the back surface treatment liquid supply pipe 12 and is discharged upward from the back surface nozzle 13. The third chemical liquid can be supplied to the back surface of the wafer W by discharging the third chemical liquid from the back nozzle 13 while the wafer W is held on the spin chuck 3.

  When the DIW back side valve 21 is opened with the first chemical back side valve 18, the second chemical back side valve 19, and the third chemical back side valve 20 closed, the back side treatment liquid is supplied from the DIW back side supply pipe 17. DIW is supplied to the supply pipe 12. The DIW supplied to the back surface treatment liquid supply pipe 12 is supplied to the back surface nozzle 13 through the back surface treatment liquid supply pipe 12 and is discharged upward from the back surface nozzle 13. DIW can be supplied to the back surface of the wafer W by ejecting DIW from the back surface nozzle 13 while the wafer W is held on the spin chuck 3.

Thus, by selectively opening the first chemical back side valve 18, the second chemical back side valve 19, the third chemical back side valve 20, and the DIW back side valve 21, the first chemical solution, The two chemicals, the third chemical and DIW can be selectively discharged.
The DIW rear surface side supply pipe 17 is disposed at a position farther from the rear surface nozzle 13 than the first chemical liquid rear surface side supply pipe 14, the second chemical liquid rear surface side supply pipe 15, and the third chemical liquid rear surface side supply pipe 16. The liquid supply pipe 12 is connected. Therefore, after the discharge of the first chemical liquid, the second chemical liquid, or the third chemical liquid from the back surface nozzle 13 is finished, the DIW back surface side valve 21 is opened and DIW is supplied to the back surface processing liquid supply pipe 12. The first chemical liquid, the second chemical liquid, or the third chemical liquid remaining in the back surface treatment liquid supply pipe 12 is excluded. Therefore, after the first chemical backside treatment process, the second chemical backside treatment process, and the third chemical backside treatment process, a back surface rinsing process (described later) is performed, whereby the first chemical liquid is provided in the backside treatment liquid supply pipe 12. There is no possibility of causing contact between the second chemical and the third chemical.

  Further, when it is not necessary to clean the back surface of the wafer W, the back surface processing solution supply pipe 12, the first chemical solution back side valve 18, the second chemical solution back side valve 19, the third chemical solution back side valve 20, and the DIW back side. The valve 21 is omitted. In this case, the spin chuck 3 is not limited to the sandwiching type, and for example, the wafer W is held in a horizontal posture by vacuum suction on the back surface of the wafer W, and further rotated around a vertical axis in that state. Thus, a vacuum chucking type (vacuum chuck) that can rotate the held wafer W may be employed.

  The first chemical liquid nozzle 4 is connected to a first chemical liquid surface side supply pipe 22 to which the first chemical liquid is supplied from a first chemical liquid cabinet 65 (see FIG. 2). A first chemical liquid surface side valve 23 is interposed in the first chemical liquid surface side supply pipe 22. When the first chemical liquid surface side valve 23 is opened, the first chemical liquid is supplied from the first chemical liquid surface side supply pipe 22 to the first chemical liquid nozzle 4, and the first chemical liquid is discharged from the first chemical liquid nozzle 4.

  The second chemical liquid nozzle 5 is connected to a second chemical liquid surface side supply pipe 24 to which a second chemical liquid is supplied from a second chemical liquid cabinet 66 (see FIG. 2). A second chemical liquid surface side valve 25 is interposed in the second chemical liquid surface side supply pipe 24. When the second chemical liquid surface side valve 25 is opened, the second chemical liquid is supplied from the second chemical liquid surface side supply pipe 24 to the second chemical liquid nozzle 5, and the second chemical liquid is discharged from the second chemical liquid nozzle 5.

  The first chemical liquid nozzle 4 and the second chemical liquid nozzle 5 are attached to the tip of a nozzle arm 26 that extends substantially horizontally above the spin chuck 3. The base end portion of the nozzle arm 26 is supported by the upper end portion of an arm support shaft 27 that extends substantially vertically on the side of a cup 38 (described later). A nozzle driving mechanism 28 including a motor (not shown) is coupled to the arm support shaft 27. By inputting rotational force from the nozzle drive mechanism 28 to the arm support shaft 27 and rotating the arm support shaft 27, the nozzle arm 26 can be swung above the spin chuck 3.

  In a state where the wafer W is held on the spin chuck 3 and the first chemical liquid nozzle 4 is disposed above the wafer W, the first chemical liquid is discharged from the first chemical liquid nozzle 4, whereby the first chemical liquid is discharged onto the surface of the wafer W. A chemical solution can be supplied. Then, when the first chemical solution is supplied from the first chemical solution nozzle 4 to the surface of the wafer W, the nozzle arm 26 is swung within a predetermined angle range, whereby the first chemical solution is deposited on the surface of the wafer W. The (supply position) can be moved in a range from the rotation center of the wafer W to the peripheral edge of the wafer W while drawing an arc-shaped locus.

  In addition, the wafer W is held on the spin chuck 3 and the second chemical liquid nozzle 5 is disposed above the wafer W so that the second chemical liquid is discharged from the second chemical liquid nozzle 5, so that the surface of the wafer W is discharged. A 2nd chemical | medical solution can be supplied. Then, when the second chemical liquid is supplied from the second chemical liquid nozzle 5 to the surface of the wafer W, the nozzle arm 26 is swung within a predetermined angle range, whereby the second chemical liquid is deposited on the surface of the wafer W. The (supply position) can be moved in a range from the rotation center of the wafer W to the peripheral edge of the wafer W while drawing an arc-shaped locus.

  The third chemical liquid nozzle 6 is a so-called two-fluid nozzle that can supply the third chemical liquid to the surface of the wafer W in the form of a droplet jet. The third chemical liquid nozzle 6 has a high pressure from a third chemical liquid surface side supply pipe 29 to which a third chemical liquid is supplied from a third chemical liquid cabinet 67 (see FIG. 2) and a nitrogen gas supply line (not shown). A nitrogen gas supply pipe 30 to which nitrogen gas is supplied is connected.

  A third chemical liquid surface side valve 31 is interposed in the third chemical liquid surface side supply pipe 29. The nitrogen gas supply pipe 30 is provided with a nitrogen gas valve 32. When the third chemical liquid surface side valve 31 and the nitrogen gas valve 32 are opened, the third chemical liquid from the third chemical liquid surface side supply pipe 29 and the nitrogen gas from the nitrogen gas supply pipe 30 are supplied to the third chemical liquid nozzle 6. The third chemical liquid and nitrogen gas supplied to the third chemical liquid nozzle 6 are mixed in the third chemical liquid nozzle 6 or in the vicinity of the discharge port outside the third chemical liquid nozzle 6. Thereby, a jet of fine droplets of the third chemical is formed.

  The third chemical liquid nozzle 6 is attached to the tip of a third chemical liquid nozzle arm 33 extending substantially horizontally above the spin chuck 3. The base end portion of the third chemical liquid nozzle arm 33 is supported by the upper end portion of the third chemical liquid nozzle arm support shaft 34 extending substantially vertically on the side of the cup 38 (described later). A third chemical liquid nozzle drive mechanism 35 including a motor (not shown) is coupled to the third chemical liquid nozzle arm support shaft 34. A rotational force is input from the third chemical nozzle drive mechanism 35 to the third chemical nozzle support arm 34 to rotate the third chemical nozzle arm support shaft 34, thereby rotating the third chemical nozzle arm support shaft 34 above the spin chuck 3. The chemical nozzle arm 33 can be swung.

  The wafer W is held by the spin chuck 3, and the third chemical liquid nozzle 6 is ejected from the third chemical liquid nozzle 6 while the third chemical liquid nozzle 6 is disposed above the wafer W, whereby the wafer W A 3rd chemical | medical solution can be supplied to the surface of this. Then, when supplying the third chemical liquid droplet jet from the third chemical liquid nozzle 6 to the surface of the wafer W, the third chemical liquid nozzle arm 33 is swung within a predetermined angular range, thereby The position (supply position) of the third chemical liquid on the surface can be moved while drawing an arc-shaped locus within a range from the rotation center of the wafer W to the peripheral edge of the wafer W.

The DIW nozzle 7 is fixedly disposed above the spin chuck 3 with respect to the spin chuck 3.
The DIW nozzle 7 is connected to a DIW surface side supply pipe 36 to which DIW is supplied from a DIW supply line (not shown). A DIW surface side valve 37 is interposed in the DIW surface side supply pipe 36. When the DIW surface side valve 37 is opened, DIW is supplied from the DIW surface side supply pipe 36 to the DIW nozzle 7 and DIW is discharged from the DIW nozzle 7. DIW can be supplied to the surface of the wafer W by ejecting DIW from the DIW nozzle 7 while the wafer W is held on the spin chuck 3.

The spin chuck 3 is housed in a cup 38 having a bottomed cylindrical container shape. Above the cup 38, a splash guard 39 that can be raised and lowered with respect to the cup 38 is provided.
At the bottom of the cup 38, a waste liquid groove 40 for waste of the third chemical liquid and DIW is formed in an annular shape centering on the rotation axis of the wafer W (the central axis of the spin axis 8). Further, at the bottom of the cup 38, a first recovery groove 41 for recovering the first chemical liquid and a second recovery groove 42 for recovering the second chemical liquid are formed in a double annular shape so as to surround the waste liquid groove 40. Is formed. A waste liquid line 43, a first recovery line 44, and a second recovery line 45 are connected to the waste liquid groove 40, the first recovery groove 41, and the second recovery groove 42, respectively.

  The splash guard 39 is configured by overlapping three umbrella-shaped members 46, 47, and 48 having different sizes. To the splash guard 39, for example, a guard lifting mechanism 49 including a servo motor and a ball screw mechanism is coupled. By the guard lifting mechanism 49, the splash guard 39 can be moved up and down (moved up and down) with respect to the cup 38.

Each umbrella-shaped member 46 to 48 has a shape that is substantially rotationally symmetric with respect to the rotation axis of the wafer W.
The umbrella-shaped member 46 connects the cylindrical cylindrical portions 50 and 51 having the rotation axis of the wafer W as the central axis, and the upper ends of the cylindrical portions 50 and 51, and becomes higher as the rotation axis of the wafer W is approached. And an inclined portion 52 that inclines in an integral manner. The lower end of the inner (center side) cylindrical portion 50 is located on the waste liquid groove 40. The lower end of the outer cylindrical portion 51 is located on the first recovery groove 41. Further, the cylindrical portions 50 and 51 have such a length that their lower ends do not contact the bottom surface of the cup 38 when the splash guard 39 is lowered to the lowermost retracted position.

  The umbrella-shaped member 47 is provided so as to surround the umbrella-shaped member 46, and connects the cylindrical cylindrical portions 53, 54 having the rotation axis of the wafer W as the central axis and the upper ends of these cylindrical portions 53, 54, An inclining portion 55 that inclines so as to become higher as it approaches the rotation axis of the wafer W is integrally provided. The lower end of the inner (center side) cylindrical portion 53 is positioned on the first recovery groove 41, and the lower end of the outer cylindrical portion 54 is positioned on the second recovery groove 42. Further, the cylindrical portions 53 and 54 have such a length that their lower ends do not contact the bottom surface of the cup 38 when the splash guard 39 is lowered to the lowermost retracted position.

  The umbrella-shaped member 48 is provided so as to surround the umbrella-shaped member 47, and the cylindrical cylindrical portion 56 having the rotation axis of the wafer W as the central axis, and the closer to the rotation axis of the wafer W from the upper end of the cylindrical portion 56. And an inclined portion 57 that is inclined to be higher. The cylindrical portion 56 is located on the second recovery groove 42 and has such a length that the lower end thereof does not contact the bottom surface of the cup 38 when the splash guard 39 is lowered to the lowermost retracted position. Yes.

  The upper end edges of the inclined portions 52, 55, and 57 are positioned on the cylindrical surface having the rotation axis of the wafer W as the central axis with a space in the direction along the rotation axis of the wafer W (vertical direction). As a result, a first collection / capture port 58 is formed between the upper end edge of the inclined portion 52 and the upper end edge of the inclined portion 55 to allow the first chemical liquid scattered from the wafer W to enter and capture it. . In addition, an annular second collection / capture port 59 is formed between the upper end edge of the inclined portion 55 and the upper end edge of the inclined portion 57 to allow the second chemical solution scattered from the wafer W to enter and capture the second chemical solution. ing.

  The first chemical liquid captured by the first recovery capture port 58 is collected in the first recovery groove 41 through the space between the cylindrical portion 51 of the umbrella-shaped member 46 and the cylindrical portion 53 of the umbrella-shaped member 47. The first chemical liquid collected in the first recovery groove 41 is collected through a first recovery line 44 to a first chemical liquid recovery processing facility (not shown), and a predetermined recovery process is performed in the first chemical liquid recovery processing facility. After that, it returns to the 1st chemical | medical solution cabinet 65 (refer FIG. 2).

  The second chemical liquid captured by the second recovery capturing port 59 is collected in the second recovery groove 42 through the space between the cylindrical portion 54 of the umbrella-shaped member 47 and the cylindrical portion 56 of the umbrella-shaped member 48. The second chemical liquid collected in the second recovery groove 42 is recovered through a second recovery line 45 to a second chemical liquid recovery processing facility (not shown), and a predetermined recovery process is performed in the second chemical liquid recovery processing facility. After that, it returns to the 2nd chemical | medical solution cabinet 66 (refer FIG. 2).

Further, the inner surfaces of the cylindrical portion 50 and the inclined portion 52 of the umbrella-shaped member 46 serve as guide surfaces for guiding the third chemical liquid and DIW scattered from the wafer W to the waste liquid groove 40. The third chemical liquid and DIW guided to the waste liquid groove 40 are discharged through the waste liquid line 43.
In this embodiment, the configuration in which the third chemical liquid used for processing the wafer W is discarded is taken up. However, when the third chemical liquid is recovered, the second recovery groove 42 is surrounded. A third recovery groove is provided, and a cylindrical portion positioned on the third recovery groove is additionally provided in the umbrella-shaped member 48. The cylindrical portion positioned on the third recovery groove and the rotation of the wafer W from the upper end of the cylindrical portion are provided. What is necessary is just to provide the umbrella-shaped member integrally provided with the inclined part which inclines so that it may become so high that it approaches an axis line so that the umbrella-shaped member 48 may be surrounded.

FIG. 2 is a block diagram showing an electrical configuration of the substrate processing apparatus 1.
The substrate processing apparatus 1 includes a computer 62 configured to include a CPU 60 and a memory 61. In this computer 62, the first chemical liquid back side valve 18, the second chemical liquid back side valve 19, the third chemical liquid back side valve 20, the DIW back side valve 21, the first chemical liquid front side valve 23, the second chemical liquid back side valve 18, the second chemical liquid back side valve 19, The chemical liquid surface side valve 25, the third chemical liquid surface side valve 31, the nitrogen gas valve 32, the DIW surface side valve 37, the chuck rotating mechanism 11, the nozzle driving mechanism 28, the third chemical liquid nozzle driving mechanism 35, and the guard lifting mechanism 49 are connected. ing. The computer 62 is connected to a recipe input key 63 for inputting a recipe that defines the execution order of each processing step in the wafer W cleaning process, and a timer 64 for timing.

The substrate processing apparatus 1 can execute the following processing steps (1) to (8).
(1) First chemical liquid surface treatment process The first chemical liquid surface treatment process is a process of supplying the first chemical liquid to the surface of the wafer W from the first chemical liquid nozzle 4 and treating the surface of the wafer W with the first chemical liquid. . In the first chemical liquid surface treatment step, the splash guard 39 is disposed so that the first collection / capture port 58 faces the peripheral end surface of the wafer W held by the spin chuck 3. Then, the first chemical solution is supplied from the first chemical solution nozzle 4 to the surface of the wafer W while the wafer W is rotated by the spin chuck 3 at a predetermined rotation speed (for example, 600 rpm). Further, when supplying the first chemical solution, the nozzle arm 26 is swung within a predetermined angular range. As a result, the landing position of the first chemical solution on the surface of the wafer W moves in a range from the rotation center of the wafer W to the peripheral edge of the wafer W while drawing an arc-shaped locus. As a result, the first chemical liquid is supplied uniformly over the entire surface of the wafer W. The first chemical liquid supplied to the surface of the wafer W is scattered from the periphery of the wafer W to the side by the centrifugal force generated by the rotation of the wafer W. At this time, since the first collection / capture port 58 faces the end face of the wafer W, the first chemical liquid scattered from the wafer W enters the first collection / capture port 58 and is captured.

(2) Second Chemical Solution Surface Treatment Step The second chemical solution surface treatment step is a step of supplying the second chemical solution to the surface of the wafer W from the second chemical solution nozzle 5 and treating the surface of the wafer W with the second chemical solution. . In the second chemical liquid surface treatment step, the splash guard 39 is disposed so that the second collection / capture port 59 faces the peripheral end surface of the wafer W held by the spin chuck 3. Then, the second chemical liquid is supplied from the second chemical liquid nozzle 5 to the surface of the wafer W while the wafer W is rotated by the spin chuck 3 at a predetermined rotation speed (for example, 700 rpm). Further, when the second chemical solution is supplied, the nozzle arm 26 is swung within a predetermined angle range. As a result, the landing position of the second chemical solution on the surface of the wafer W moves within the range from the rotation center of the wafer W to the peripheral edge of the wafer W while drawing an arc-shaped locus. As a result, the second chemical liquid is supplied uniformly over the entire surface of the wafer W. The second chemical liquid supplied to the surface of the wafer W is scattered from the periphery of the wafer W to the side by the centrifugal force generated by the rotation of the wafer W. At this time, since the second collection / capture port 59 is opposed to the end surface of the wafer W, the second chemical liquid scattered from the wafer W enters the second collection / capture port 59 and is captured.

(3) Third Chemical Solution Surface Treatment Step The third chemical solution surface treatment step is a step of supplying the third chemical solution from the third chemical solution nozzle 6 to the surface of the wafer W and treating the surface of the wafer W with the third chemical solution. . In the third chemical liquid surface treatment step, the splash guard 39 is disposed so that the inclined portion 51 of the umbrella-shaped member 46 faces the peripheral end surface of the wafer W held by the spin chuck 3. Then, while the wafer W is rotated at a predetermined rotation speed (for example, 500 rpm) by the spin chuck 3, a jet of the third chemical liquid droplet is supplied from the third chemical liquid nozzle 6 to the surface of the wafer W. Further, when the third chemical solution is supplied, the third chemical solution nozzle arm 33 is swung within a predetermined angle range. As a result, the position where the third chemical solution is deposited on the surface of the wafer W moves within a range from the rotation center of the wafer W to the peripheral edge of the wafer W while drawing an arc-shaped locus. As a result, the third chemical liquid is supplied uniformly over the entire surface of the wafer W. The third chemical liquid supplied to the surface of the wafer W is scattered from the periphery of the wafer W to the side by the centrifugal force generated by the rotation of the wafer W. At this time, since the inclined portion 51 of the umbrella-shaped member 46 is opposed to the end surface of the wafer W, the third chemical liquid scattered from the wafer W passes through the inner surfaces of the cylindrical portion 50 and the inclined portion 52 of the umbrella-shaped member 46. Then, it is guided to the waste liquid groove 40.

(4) Surface rinsing step The surface rinsing step is a step of supplying DIW to the surface of the wafer W from the DIW nozzle 7 and washing the surface of the wafer W with DIW. In this surface rinsing step, the splash guard 39 is disposed so that the inclined portion 51 of the umbrella-shaped member 46 faces the peripheral end surface of the wafer W held by the spin chuck 3. Then, the DIW is supplied from the DIW nozzle 7 to the center of the surface of the wafer W while the wafer W is rotated by the spin chuck 3 at a predetermined rotation speed (for example, 500 rpm). The DIW supplied to the surface of the wafer W receives a centrifugal force due to the rotation of the wafer W and flows from the center of the wafer W toward the periphery. As a result, DIW is uniformly supplied to the entire surface of the wafer W. The DIW that has reached the periphery of the surface of the wafer W is scattered from the periphery of the wafer W to the side. At this time, since the inclined portion 51 of the umbrella-shaped member 46 faces the end surface of the wafer W, the DIW scattered from the wafer W travels along the inner surface of the cylindrical portion 50 and the inclined portion 52 of the umbrella-shaped member 46. Then, it is guided to the waste liquid groove 40.

(5) 1st chemical | medical solution back surface treatment process A 1st chemical | medical solution back surface processing process is a process of supplying a 1st chemical | medical solution to the back surface of the wafer W from the back surface nozzle 13, and processing the back surface of the wafer W with a 1st chemical | medical solution. In the first chemical liquid back surface treatment step, the splash guard 39 is arranged so that the first collection / capture port 58 faces the peripheral end surface of the wafer W held by the spin chuck 3. Then, the first chemical solution is supplied from the back surface nozzle 13 to the center of the back surface of the wafer W while the wafer W is rotated by the spin chuck 3 at a predetermined rotation speed (for example, 600 rpm). The first chemical liquid supplied to the back surface of the wafer W receives a centrifugal force due to the rotation of the wafer W and flows from the center of the wafer W toward the periphery. As a result, the first chemical liquid is evenly supplied to the entire back surface of the wafer W. The first chemical solution that has reached the periphery of the back surface of the wafer W is scattered from the periphery of the wafer W to the side. At this time, since the first collection / capture port 58 faces the end face of the wafer W, the first chemical liquid scattered from the wafer W enters the first collection / capture port 58 and is captured.

(6) Second chemical liquid back surface processing step The second chemical liquid back surface processing step is a step of supplying the second chemical liquid to the back surface of the wafer W from the back nozzle 13 and processing the back surface of the wafer W with the second chemical liquid. In the second chemical solution back surface treatment step, the splash guard 39 is disposed so that the second collection / capture port 59 faces the peripheral end surface of the wafer W held by the spin chuck 3. Then, the second chemical solution is supplied from the back surface nozzle 13 to the center of the back surface of the wafer W while the wafer W is rotated at a predetermined rotation speed (for example, 700 rpm) by the spin chuck 3. The second chemical solution supplied to the back surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, and flows from the center of the wafer W toward the periphery. As a result, the second chemical liquid is evenly supplied to the entire back surface of the wafer W. The second chemical liquid that has reached the periphery of the back surface of the wafer W is scattered from the periphery of the wafer W to the side. At this time, since the second collection / capture port 59 is opposed to the end surface of the wafer W, the second chemical liquid scattered from the wafer W enters the second collection / capture port 59 and is captured.

(7) Third Chemical Solution Back Surface Processing Step The third chemical solution back surface processing step is a step of supplying the third chemical solution from the back nozzle 13 to the back surface of the wafer W and processing the back surface of the wafer W with the third chemical solution. In the third chemical solution back surface treatment step, the splash guard 39 is disposed so that the inclined portion 51 of the umbrella-shaped member 46 faces the peripheral end surface of the wafer W held by the spin chuck 3. Then, the third chemical solution is supplied from the back surface nozzle 13 to the center of the back surface of the wafer W while the wafer W is rotated by the spin chuck 3 at a predetermined rotation speed (for example, 500 rpm). The third chemical liquid supplied to the back surface of the wafer W receives a centrifugal force due to the rotation of the wafer W and flows from the center of the wafer W toward the periphery. As a result, the third chemical liquid is evenly supplied to the entire back surface of the wafer W. The third chemical solution that has reached the periphery of the back surface of the wafer W is scattered from the periphery of the wafer W to the side. At this time, since the inclined portion 51 of the umbrella-shaped member 46 is opposed to the end surface of the wafer W, the third chemical liquid scattered from the wafer W passes through the inner surfaces of the cylindrical portion 50 and the inclined portion 52 of the umbrella-shaped member 46. Then, it is guided to the waste liquid groove 40.

(8) Back surface rinsing step The back surface rinsing step is a step of supplying DIW from the back surface nozzle 13 to the back surface of the wafer W and washing the back surface of the wafer W with DIW. In this back surface rinsing step, the splash guard 39 is disposed so that the inclined portion 51 of the umbrella-shaped member 46 faces the peripheral end surface of the wafer W held by the spin chuck 3. Then, while the wafer W is rotated at a predetermined rotation speed (for example, 500 rpm) by the spin chuck 3, DIW is supplied from the back surface nozzle 13 to the center of the back surface of the wafer W. The DIW supplied to the back surface of the wafer W receives a centrifugal force due to the rotation of the wafer W and flows from the center of the wafer W toward the periphery. As a result, DIW is uniformly supplied to the entire back surface of the wafer W. The DIW that has reached the periphery of the back surface of the wafer W is scattered laterally from the periphery of the wafer W. At this time, since the inclined portion 51 of the umbrella-shaped member 46 faces the end surface of the wafer W, the DIW scattered from the wafer W travels along the inner surface of the cylindrical portion 50 and the inclined portion 52 of the umbrella-shaped member 46. Then, it is guided to the waste liquid groove 40.

The recipe input key 63 is arranged at a position where the user can operate. The user can create a recipe by operating the recipe input key 63, selecting a plurality of processing steps, and specifying the order of the selected processing steps. A recipe created by operating the recipe input key 63 is stored in the memory 61 of the computer 62.
In the memory 61, a combination of chemicals that are dangerous for mixing, such as bumping due to intense exothermic reaction when mixed, is stored as a chemical solution database prohibiting mixing.

  Further, the first chemical solution cabinet 65 that is the supply source of the first chemical solution, the second chemical solution cabinet 66 that is the supply source of the second chemical solution, and the third chemical solution cabinet 67 that is the supply source of the third chemical solution are one-to-one. Correspondingly, used chemical liquid memories 68, 69, and 70 are provided. These used chemical liquid memories 68, 69, and 70 store chemical names of the first chemical liquid, the second chemical liquid, and the third chemical liquid, respectively.

  The CPU 60 executes table creation processing to be described later, and based on the chemical solution database stored in the memory 61 and the chemical liquid names stored in the used chemical liquid memories 68, 69, 70, the chemical liquid-valve correspondence table, A simultaneous discharge impossibility information table and a continuous discharge impossibility information table are created. Then, the operation of each part to be controlled is controlled with reference to the simultaneous ejection impossibility information table and the continuous ejection impossibility information table so that the processing steps are executed according to the recipe held in the memory 61.

FIG. 3 is a flowchart showing the flow of table creation processing.
When the substrate processing apparatus 1 is activated, the CPU 60 (computer 62) first accesses the used chemical liquid memories 68, 69, and 70 and acquires the chemical names of the first chemical liquid, the second chemical liquid, and the third chemical liquid ( S1: Use chemical solution name acquisition).
Next, the CPU 60 associates the chemical name of the first chemical with the first chemical liquid back side valve 18 and the first chemical liquid surface side valve 23, and the chemical name of the second chemical liquid and the second chemical liquid back side valve 19 and the second chemical liquid side valve 19. The chemical liquid surface side valve 25 is associated, the chemical liquid name of the third chemical liquid is associated with the third chemical liquid back side valve 20 and the third chemical liquid surface side valve 31, and a chemical liquid-valve correspondence table representing the correspondence relationship is created. (S2).

Thereafter, the CPU 60 compares the chemical solution-valve correspondence table created this time with the chemical solution-valve correspondence table already stored in the memory 61, and confirms whether or not there is a change location between these tables (S3). : Chemical solution-valve correspondence change).
When there is a change place between the tables (YES in S3), the CPU 60 accesses the incompatible chemical solution database stored in the memory 61 and acquires information on the combination of chemical solutions that are dangerous for the incompatible (S4). : Incompatible information acquisition).

  Next, the CPU 60 checks whether or not there is a combination that involves danger in contact between the first chemical solution, the second chemical solution, and the third chemical solution. When such a combination (combination prohibition combination) exists, the CPU 60 refers to the chemical solution-valve correspondence table, and simultaneously opens and correlates the valves associated with the chemical solutions constituting the mixture prohibition combination. Front and back development is prohibited. On the other hand, for the valves associated with the chemical solutions and / or pure water that constitute combinations other than the incompatibility combination, the CPU 60 allows the valves to be opened simultaneously and opened in succession. In this way, the CPU 60 uses the first chemical liquid back side valve 18, the second chemical liquid back side valve 19, the third chemical liquid back side valve 20, the DIW back side valve 21, the first chemical liquid surface side valve 23, and the second chemical liquid surface. A combination of valves that prohibits / allows simultaneous opening and subsequent opening among the side valve 25, the third chemical liquid surface side valve 31, and the DIW surface side valve 37 is set. Then, the combination of valves for which simultaneous opening is prohibited / enabled is made into a table format (S5: creation of simultaneous discharge impossible information table), and this is stored in the memory 61 as a simultaneous discharge disabled information table. Further, a combination of valves for prohibiting / enabling the opening and closing of each other is made into a table format (S6: creation of a continuous discharge impossible information table), and this is stored in the memory 61 as a continuous discharge disabled information table.

On the other hand, when there is no change place between the tables (NO in S3), the CPU 60 does not newly create the simultaneous ejection impossibility information table and the continuous ejection impossibility information table, and ends this table creation processing. In this case, the memory 61 continues to hold the simultaneous ejection impossibility information table and the continuous ejection impossibility information table created in the past table creation processing.
FIG. 4 is a diagram illustrating an example of a continuous discharge impossibility information table.

  For example, when the first chemical solution is aqua regia, the second chemical solution is sulfuric acid, and the third chemical solution is ammonia hydrogen peroxide solution (SC1: NH4OH * + H2O2 + H2O), the first chemical solution and the second chemical solution are mixed. Both the contact between the second chemical and the third chemical and the contact between the third chemical and the first chemical are dangerous. That is, when the first chemical solution (aqua regia) and the second chemical solution (sulfuric acid) are in contact with each other, bumping occurs due to a vigorous exothermic reaction, and chlorine gas is generated as a reaction product. Further, when the second chemical solution (sulfuric acid) and the third chemical solution (ammonia hydrogen peroxide solution) come into contact with each other, an exothermic reaction occurs to produce ammonium sulfide crystals. Further, when the third chemical solution (ammonia hydrogen peroxide solution) and the first chemical solution (aqua regia) come into contact with each other, an exothermic reaction occurs to generate chlorine-based gas.

  Therefore, in this case, as shown by “x” in FIG. 4, the combination of the first chemical liquid surface side valve 23 and the second chemical liquid surface side valve 25, the first chemical liquid surface side valve 23 and the third chemical liquid surface side valve 23. Combination of chemical liquid surface side valve 31, combination of first chemical liquid surface side valve 23 and second chemical liquid back side valve 19, combination of first chemical liquid surface side valve 23 and third chemical liquid back side valve 20, second chemical liquid Combination of front side valve 25 and third chemical front side valve 31, combination of second chemical front side valve 25 and first chemical back side valve 18, second chemical front side valve 25 and second chemical back side valve 19 A combination of the third chemical liquid surface side valve 31 and the first chemical liquid back surface side valve 18, a combination of the third chemical liquid surface side valve 31 and the second chemical liquid back surface side valve 19, and the first chemical liquid back surface side valve 18 and The second chemical back side valve 19 and The combination, the combination of the first chemical back side valve 18 and the third chemical back side valve 20, and the combination of the second chemical back side valve 19 and the third chemical back side valve 20 are all prohibited from opening and closing. This is a combination of valves. All of these combinations are valve combinations that prohibit simultaneous opening. A combination other than those combinations (for example, a combination of the DIW surface side valve 37 and the first chemical liquid surface side valve 23, etc.) is a combination of valves that can be simultaneously opened and opened one after the other.

FIG. 5 is a flowchart showing the flow of the interlock process executed at the start of each processing step.
This interlock processing is executed at the start of each processing step in a process in which a series of cleaning processing is performed according to a recipe stored in the memory 61. When a plurality of processing steps are performed in parallel, the interlock processing is executed once for the processing steps.

  First, the CPU 60 has a first chemical back side valve 18, a second chemical back side valve 19, a third chemical back side valve 20, a DIW back side valve 21, a first chemical front side valve 23, and a second chemical top side valve 25. Among the third chemical liquid surface side valve 31 and DIW surface side valve 37 (hereinafter, these valves are collectively referred to as “valve group”), a valve to be newly opened (newly opened valve) is specified (S11). ). For example, when a 1st chemical | medical solution surface treatment process and a 1st chemical | medical solution back surface treatment process are performed in parallel, the 1st chemical | medical solution surface side valve | bulb 23 and the 1st chemical | medical solution back surface side valve | bulb 18 are specified as a novel opening valve.

  Next, the CPU 60 refers to the simultaneous discharge impossibility information table (S12) and determines whether or not a new valve can be opened (S13). Specifically, it is examined whether or not a combination of valves prohibiting simultaneous opening is included in the newly opened valve. If such a combination is not included, it is possible to open the newly opened valve. To be judged. For example, when the first chemical liquid surface side valve 23 and the first chemical liquid surface side valve 18 are newly opened valves, these combinations are not combinations of valves that prohibit simultaneous opening. It is determined that the chemical back surface side valve 18 can be opened.

  If the CPU 60 determines that a newly opened valve can be opened (YES in S13), the CPU 60 then identifies the valve that was most recently opened (final opened valve) (S14). As will be described later, when a valve included in the valve group is opened, information for specifying the opened valve is stored in the memory 61. Therefore, by referring to the information stored in the memory 61, the last opened valve can be specified.

  Next, the CPU 60 refers to the continuous discharge impossibility information table (S15) and determines whether or not a new open valve can be opened (S16). Specifically, it is checked whether the combination of the final opening valve and the new opening valve is a combination of valves that prohibits successive opening and closing, and the combination must be a combination of valves that prohibits successive opening and closing. In this case, it is determined that a new opening valve can be opened. For example, when the first chemical liquid surface side valve 23 and the first chemical liquid rear surface side valve 18 are newly opened valves, and the DIW front surface side valve 37 and the DIW rear surface side valve 21 are final open valves, the first chemical liquid surface side valve 23 And DIW front side valve 37 or DIW back side valve 21, and the first chemical back side valve 18 and DIW front side valve 37 or DIW back side valve 21 are both in succession to each other. Since this is not a prohibited valve combination, it is determined that the first chemical liquid surface side valve 23 and the first chemical liquid back side valve 18 can be opened.

When the CPU 60 determines that the newly opened valve can be opened (YES in S16), the CPU 60 opens the newly opened valve (S17). Then, the CPU 60 stores information for specifying the opened new valve as the final valve in the memory 61 (S18), and ends the interlock process.
On the other hand, in the recipe created by the operation of the recipe input key 63 by the user, for example, when it is specified that the first chemical liquid surface treatment process and the second chemical liquid back surface treatment process are performed in parallel, these processing steps In the interlock process at the time of starting, the first chemical liquid surface side valve 23 and the second chemical liquid back side valve 19 are specified as newly opened valves (S11). According to the simultaneous discharge impossibility information table, the combination of the first chemical liquid surface side valve 23 and the second chemical liquid back surface side valve 19 is a combination of valves that prohibits simultaneous opening. Therefore, in this case, the CPU 60 determines that the new opening valve cannot be opened (NO in S13). Then, the CPU 60 prohibits the opening of the first chemical liquid surface side valve 23 and the second chemical liquid back surface side valve 19 which are newly opened valves (S19), and ends this interlock processing. In this case, an alarm that the opening of the new opening valve is prohibited may be issued.

  In the recipe created by the operation of the recipe input key 63 by the user, for example, if it is specified that the first chemical liquid surface treatment process is performed following the third chemical liquid surface treatment process, the first chemical liquid surface In the interlock process at the start of the treatment process and the first chemical liquid back surface treatment process, the first chemical liquid surface side valve 23 is specified as a newly opened valve. Further, the third chemical liquid surface side valve 31 is specified as the final opening valve. According to the continuous discharge impossibility information table, the combination of the first chemical liquid surface side valve 23 and the third chemical liquid surface side valve 31 is a combination of valves that prohibits successive opening and closing. Therefore, in this case, the CPU 60 determines that the new opening valve cannot be opened (NO in S16). Then, the CPU 60 prohibits the opening of the first chemical liquid surface side valve 23, which is a newly opened valve (S19), and ends this interlock process. In this case, an alarm that the opening of the new opening valve is prohibited may be issued.

  As described above, the memory 61 stores information for specifying the final opening valve. Prior to opening a new valve, the CPU 60 refers to information for specifying the last valve that is stored in the memory 61. When the combination of the last opened valve and the newly opened valve is a combination of valves that prohibits successive opening in the continuous discharge impossibility information table, the opening of the newly opened valve is prohibited. Thus, the first chemical liquid, the second chemical liquid, and the second chemical liquid are attached in the state where the first chemical liquid, the second chemical liquid, or the third chemical liquid is attached to the processing chamber 2 and the waste liquid line 43, the first recovery line 44, and the second recovery line 45. The three chemicals are not supplied to the wafer W in the processing chamber 2. Therefore, it is possible to reliably prevent contact between the first chemical solution, the second chemical solution, and the third chemical solution in the processing chamber 2 or the like. As a result, the cleaning process using the first chemical solution, the second chemical solution, and the third chemical solution for the wafer W can be completed in one processing chamber 2.

  In the substrate processing apparatus 1, the CPU 60 (computer 62) reads out the names of the first chemical liquid, the second chemical liquid, and the third chemical liquid from the used chemical liquid memories 68, 69, and 70. The chemical names of the second chemical liquid and the third chemical liquid, the first chemical liquid back side valve 18, the first chemical liquid surface side valve 23, the second chemical liquid back side valve 19, the second chemical liquid surface side valve 25, and the third chemical liquid back side valve 20 And the chemical | medical solution-valve corresponding table showing the correspondence with the 3rd chemical | medical solution surface side valve | bulb 31 is created. Then, based on the chemical solution-valve correspondence table, and the incompatible chemical solution database in which information relating to the combination of chemical solutions that are dangerous to be mixed is registered, the first chemical back side valve 18, the second chemical back side valve 19, and the third chemical back side Side valve 20, DIW rear surface side valve 21, first chemical liquid surface side valve 23, second chemical liquid surface side valve 25, third chemical liquid surface side valve 31 and DIW surface side valve 37 are simultaneously opened and phased. A combination of valves to be prohibited / enabled is set, and a simultaneous discharge impossibility information table for storing combinations of valves for which simultaneous opening is prohibited / allowed, and a combination of valves for prohibiting / enabling opening and closing of successive valves are stored. An undischargeable information table is created.

  As a result, if the names of the first chemical liquid, the second chemical liquid, and the third chemical liquid are registered in the used chemical liquid memories 68, 69, and 70, respectively, and the incompatibility chemical liquid database is prepared, simultaneous opening or simultaneous opening is prohibited. The combination of valves to be automatically set. The incompatible chemical database is not different for each substrate processing apparatus 1, but is shared by a plurality of substrate processing apparatuses 1, and if this is recorded on a recording medium such as a CD-ROM, Can be read by the computer 60, so that it is possible to achieve the construction of the incompatible chemical solution database in the memory 61. Therefore, it does not take time to prepare the database for prohibited chemical solutions. Therefore, if each chemical solution name of the first chemical solution, the second chemical solution, and the third chemical solution is accurately registered in each of the chemical solution memories 68, 69, and 70 used, it can be simultaneously opened without requiring any other setting work. Or the combination of the valve which prohibits the opening and closing which follows each other can be set.

FIG. 6 is a flowchart showing the flow of another interlock process.
The interlock process shown in FIG. 6 is executed instead of the interlock process shown in FIG. Hereinafter, detailed description of the same steps as those described above in the interlock process shown in FIG. 5 will be omitted.
First, the CPU 60 identifies a newly opened valve (S21).

Next, the CPU 60 refers to the simultaneous discharge impossibility information table (S22) and determines whether or not a new valve can be opened (S23).
If the CPU 60 determines that the new valve can be opened (YES in S23), the CPU 60 then specifies the final valve (S24).
Next, if the final opening valve is the DIW front side valve 37 and the DIW rear side valve 21, the CPU 60 checks the time during which the DIW front side valve 37 and the DIW rear side valve 21 were continuously opened. This time is the duration of the front surface rinsing process and the back surface rinsing process performed by the DIW front surface side valve 37 and the DIW rear surface side valve 21 and may be obtained from a recipe. The opening time of the DIW rear surface side valve 21 may be actually measured. When the DIW front side valve 37 and the DIW back side valve 21 are opened for a predetermined time or longer and DIW is discharged from the DIW nozzle 7 and the back nozzle 13 for a predetermined time or longer (YES in S25), the CPU 60 Information for specifying an open valve is deleted from the memory 61 (S26). On the other hand, when the final open valve is not the DIW front side valve 37 and the DIW rear side valve 21, and when the DIW front side valve 37 and the DIW rear side valve 21 have not been opened for a certain time (NO in S25), the final Information for specifying an open valve is not erased.

  Thereafter, the CPU 60 refers to the continuous discharge impossibility information table (S27), and determines whether or not a new open valve can be opened (S28). Specifically, it is examined whether or not the combination of the final opening valve and the new opening valve is a combination of valves that prohibits successive opening and closing. When the information for specifying the final opening valve is deleted from the memory 61, it is impossible to specify the final opening valve, so it is determined that the new opening valve can be opened.

When the CPU 60 determines that the newly opened valve can be opened (YES in S28), the CPU 60 opens the newly opened valve (S29). Then, the CPU 60 stores information for specifying the opened new valve as the final valve in the memory 61 (S30), and ends the interlock process.
On the other hand, if the CPU 60 determines that the new valve cannot be opened at the same time because the newly opened valve includes a combination of valves that prohibits simultaneous opening (NO in S23), the CPU 60 opens the new valve. It is prohibited (S31), and this interlock process is terminated.

  Further, when the CPU 60 determines that the combination of the final opening valve and the new opening valve prohibits / allows the opening and closing of the combination, the new opening valve cannot be opened (S28). NO), the opening of the new opening valve is prohibited (S31), and this interlock processing is terminated. Even if the combination of the last opened valve and the newly opened valve is not a combination of valves that prohibits successive opening and closing, if the information for identifying the last opened valve is not erased, the newly opened valve is newly opened. It is determined that the valve cannot be opened (NO in S28), and the opening of the newly opened valve is prohibited (S31).

  As described above, the final opening valves are the DIW front side valve 37 and the DIW rear side valve 21, and the time during which the DIW front side valve 37 and the DIW rear side valve 21 are continuously opened is a certain time or more. In this case, information for specifying the last opened valve is deleted from the memory 61. Information for specifying the last opened valve is deleted from the memory 61.

  When DIW is discharged from the DIW nozzle 7 and the back nozzle 13 for a predetermined time or longer, the first chemical liquid and the second chemical liquid are discharged from the processing chamber 2, the processing chamber 2, the waste liquid line 43, the first recovery line 44, and the second recovery line 45. Alternatively, since the third chemical liquid is reliably washed away with DIW, even if the first chemical liquid, the second chemical liquid, or the third chemical liquid is supplied to the wafer W in the processing chamber 2 after that, the first chemical liquid in the processing chamber 2 or the like, No contact between the second chemical and the third chemical occurs. On the other hand, if DIW is not discharged from the DIW nozzle 7 and the back nozzle 13 for a predetermined time or more after the first chemical solution, the second chemical solution, or the third chemical solution is supplied to the wafer W, the first chemical solution is introduced into the processing chamber 2 or the like. If the chemical liquid, the second chemical liquid, or the third chemical liquid remains, and then the first chemical liquid, the second chemical liquid, or the third chemical liquid is supplied, there is a risk of causing contact between the first chemical liquid, the second chemical liquid, and the third chemical liquid. is there. Therefore, even if the final opening valve is the DIW front side valve 37 and the DIW rear side valve 21, the time during which the DIW front side valve 37 and the DIW rear side valve 21 are continuously opened is not longer than a certain time. Opening of a new open valve is prohibited. Accordingly, it is possible to reliably prevent the first chemical solution, the second chemical solution, and the third chemical solution in the processing chamber 2 or the like from being mixed, and the first chemical solution and the second chemical solution for the wafer W in one processing chamber 2. And the washing process using the third chemical solution can be completed.

FIG. 7 is a flowchart showing the flow of the recipe availability determination process.
In the above description, the recipe created by operating the recipe input key 63 is stored in the memory 61 of the computer 62, and in the course of a series of cleaning processes performed according to the recipe held in the memory 61, each processing step is performed. It is assumed that the interlock process is executed at the start of. However, after the recipe is created by operating the recipe input key 63, the recipe availability determination process shown in FIG. 7 is executed, and the created recipe causes the first chemical liquid, the second chemical liquid, and the third chemical liquid to be mixed. It may be determined whether or not the order of processing steps is not defined, and the recipe may be stored and saved in the memory 61 only when such order of processing steps is not defined.

In the recipe availability determination process, first, the CPU 60 virtually executes a series of cleaning processes according to the recipe input from the recipe input key 63 (S41). That is, the CPU 60 virtually executes the processing steps in the order specified in the recipe, and virtually opens and closes the valve group.
Then, the CPU 60 virtually executes the interlock processing shown in FIG. 5 or 6 at the start of each processing step (S42).

In the interlock process in at least one processing step, when the opening of the new opening valve is prohibited (YES in S43), the CPU 60 discards the recipe input from the recipe input key 63 (S44).
On the other hand, if the opening of the new valve is not prohibited in the interlock processing in all the processing steps (NO in S43), the CPU 60 uses the recipe inputted from the recipe input key 63 as the first chemical solution, the first It is determined that the order of the processing steps that cause contact between the two chemical solutions and the third chemical solution is not defined, and is stored in the memory 61 and stored (S45).

By performing this recipe adequacy determination process, it is possible to prevent the storage of the recipe in the memory 61 that defines the order of the processing steps that cause the first chemical liquid, the second chemical liquid, and the third chemical liquid from being mixed, and FIG. Effects similar to those described with reference to FIG. 6 can be achieved.
As mentioned above, although several embodiment of this invention was described, this invention can also be implemented with another form. For example, aqua regia, sulfuric acid, and aqueous ammonia hydrogen peroxide are exemplified as a combination of the first chemical solution, the second chemical solution, and the third chemical solution that may be dangerous when mixed with each other. A combination of ammonium fluoride-based liquid, hydrofluoric acid, and buffered hydrofluoric acid used as the above can also be exemplified. In addition, the first chemical solution, the second chemical solution, and the third chemical solution that are dangerous when mixed with the first chemical solution and the second chemical solution and do not involve danger when mixed with the first chemical solution and the second chemical solution. Examples of combinations include aqua regia as the first chemical, sulfuric acid as the second chemical, and hydrogen peroxide as the third chemical.

Furthermore, although the structure which can use 3 types of chemical | medical solutions of a 1st chemical | medical solution, a 2nd chemical | medical solution, and a 3rd chemical | medical solution was picked up, it is the substrate processing apparatus of the structure which can use two types of chemical | medical solutions of a 1st chemical | medical solution and a 2nd chemical | medical solution. The present invention can also be applied.
Further, the configuration in which the third chemical liquid is supplied to the wafer W in the form of a jet of droplets has been taken up. However, the third chemical liquid nozzle 6 is a straight nozzle, and the third chemical liquid is supplied to the wafer W in a continuous flow state. May be. Furthermore, the first chemical liquid nozzle 4 and / or the second chemical liquid nozzle 5 may be a two-fluid nozzle, and the first chemical liquid and / or the second chemical liquid may be supplied to the wafer W in the state of a jet of droplets.

In addition, although the chemical names of the first chemical liquid, the second chemical liquid, and the third chemical liquid are registered in the used chemical liquid memories 68, 69, and 70, respectively, they are specific to the first chemical liquid, the second chemical liquid, and the third chemical liquid. In the case of information, for example, the product numbers of the first chemical solution, the second chemical solution, and the third chemical solution may be registered in the used chemical memory 68, 69, and 70, respectively.
In addition, various design changes can be made within the scope of matters described in the claims.

It is sectional drawing which shows notionally the structure of the substrate processing apparatus which concerns on one Embodiment of this invention. It is a block diagram which shows the electric constitution of a substrate processing apparatus. It is a flowchart which shows the flow of a table creation process. It is a figure which shows an example of the continuous discharge impossibility information table. It is a flowchart which shows the flow of the interlock process performed at the time of the start of each process process. It is a flowchart which shows the flow of another interlock process. It is a flowchart which shows the flow of a recipe permission judgment process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Processing chamber 18 1st chemical | medical solution back surface side valve 19 2nd chemical | medical solution back surface side valve 20 3rd chemical | medical solution back surface side valve 21 DIW back surface side valve 23 1st chemical | medical solution surface side valve 25 25 2nd chemical | medical solution surface side valve 31 3rd Chemical solution surface side valve 37 DIW surface side valve 60 CPU
61 Memory 62 Computer 63 Recipe input key 64 Timer W Wafer

Claims (4)

A processing chamber;
First chemical solution supply means for supplying a first chemical solution to the substrate in the processing chamber;
A second chemical supply means for supplying a second chemical different from the first chemical to the substrate in the processing chamber;
Rinsing liquid supply means for supplying a rinsing liquid to the substrate in the processing chamber;
Supply operation control means for controlling each supply operation of the first chemical liquid supply means, the second chemical liquid supply means and the rinse liquid supply means;
Final supply storage means for storing which one of the supply operations of the first chemical liquid supply means, the second chemical liquid supply means and the rinse liquid supply means was controlled in the past by the supply operation control means;
Prior to control of the supply operation of the first chemical solution supply unit or the second chemical solution supply unit by the supply operation control unit, the storage content of the final supply storage unit is referred to and the supply operation of the first chemical solution supply unit is performed. Subsequently, when the supply operation of the second chemical solution supply unit is to be controlled, or following the supply operation of the second chemical solution supply unit, the supply operation of the first chemical solution supply unit is controlled. And a control prohibiting means for prohibiting the control of the supply operation by the supply operation control means. A duration measuring means for measuring a time during which the supply operation of the rinsing liquid supply means is continuously performed;
It is stored in the final supply storage means that the supply operation of the rinse liquid supply means has been controlled in the past, and the time measured by the duration measuring means during the most recent supply operation is a predetermined time or more A storage erasure means for erasing the storage content of the final supply storage means,
In the control prohibiting means, it is stored in the final supply storage means that the supply operation of the rinse liquid supply means has been controlled in the past, and, following the supply operation of the rinse liquid supply means, 2. The substrate processing apparatus according to claim 1, wherein when the supply operation of the one chemical solution supply unit or the second chemical solution supply unit is controlled, the control of the supply operation is prohibited. A processing chamber;
First chemical solution supply means for supplying a first chemical solution to the substrate in the processing chamber;
A second chemical supply means for supplying a second chemical different from the first chemical to the substrate in the processing chamber;
Rinsing liquid supply means for supplying a rinsing liquid to the substrate in the processing chamber;
Supply operation control means for controlling each supply operation of the first chemical liquid supply means, the second chemical liquid supply means and the rinse liquid supply means;
Recipe input means for inputting a recipe that defines a control sequence of supply operations by the supply operation control means;
Recipe storage means for storing a recipe input from the recipe input means;
In the virtual execution process of virtually executing the control by the supply operation control means according to the recipe input from the recipe input means, the supply operation control means causes the first chemical liquid supply means, the second chemical liquid supply means, and the rinse Final supply storage means for storing which supply operation of the liquid supply means was controlled most recently in the past;
Prior to controlling the supply operation of the first chemical solution supply unit or the second chemical solution supply unit by the supply operation control unit in the virtual execution process, the storage contents of the final supply storage unit are referred to, and the first chemical solution is stored. When the supply operation of the second chemical liquid supply means is controlled following the supply operation of the supply means, or after the supply operation of the second chemical liquid supply means, the supply of the first chemical liquid supply means A substrate processing apparatus comprising: a recipe storage prohibiting unit that prohibits storage of a recipe input from the recipe input unit in the recipe storage unit when an operation is to be controlled. In the virtual execution process, a duration measuring unit that measures a time during which the supply operation of the rinse liquid supply unit is continuously performed; and
In the virtual execution process, it is stored in the final supply storage means that the supply operation of the rinsing liquid supply means was controlled in the past, and was measured by the duration measuring means during the latest supply operation. A storage erasure unit for erasing the stored contents of the final supply storage unit when the time is equal to or longer than a predetermined time,
In the virtual execution process, the recipe storage prohibiting unit stores in the final supply storage unit that the supply operation of the rinse liquid supply unit has been controlled in the past, and the supply of the rinse liquid supply unit When the supply operation of the first chemical solution supply unit or the second chemical solution supply unit is controlled subsequent to the operation, the storage of the recipe input from the recipe input unit in the recipe storage unit is prohibited. The substrate processing apparatus according to claim 3, wherein:

Images