JP2008244018A5 - - Google Patents
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- Publication number
- JP2008244018A5 JP2008244018A5 JP2007080301A JP2007080301A JP2008244018A5 JP 2008244018 A5 JP2008244018 A5 JP 2008244018A5 JP 2007080301 A JP2007080301 A JP 2007080301A JP 2007080301 A JP2007080301 A JP 2007080301A JP 2008244018 A5 JP2008244018 A5 JP 2008244018A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- oxygen
- substrate
- transition metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007080301A JP2008244018A (ja) | 2007-03-26 | 2007-03-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007080301A JP2008244018A (ja) | 2007-03-26 | 2007-03-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008244018A JP2008244018A (ja) | 2008-10-09 |
| JP2008244018A5 true JP2008244018A5 (cg-RX-API-DMAC7.html) | 2010-01-21 |
Family
ID=39915019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007080301A Pending JP2008244018A (ja) | 2007-03-26 | 2007-03-26 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008244018A (cg-RX-API-DMAC7.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5096294B2 (ja) * | 2008-11-08 | 2012-12-12 | 独立行政法人科学技術振興機構 | 抵抗変化型不揮発性メモリー素子 |
| JP2010199104A (ja) * | 2009-02-23 | 2010-09-09 | National Institute For Materials Science | ノンポーラ型不揮発性メモリー素子 |
| JP2010251352A (ja) * | 2009-04-10 | 2010-11-04 | Panasonic Corp | 不揮発性記憶素子及びその製造方法 |
| JP2013510438A (ja) * | 2009-11-06 | 2013-03-21 | ラムバス・インコーポレーテッド | 三次元メモリアレイ積層構造体 |
| WO2012073471A1 (ja) * | 2010-12-01 | 2012-06-07 | キヤノンアネルバ株式会社 | 不揮発性記憶素子およびその製造方法 |
| KR20140107674A (ko) | 2011-06-08 | 2014-09-04 | 가부시키가이샤 아루박 | 저항 변화 소자의 제조 방법 및 그 제조 장치 |
| JPWO2013069274A1 (ja) | 2011-11-10 | 2015-04-02 | パナソニック株式会社 | 有機表示パネル、有機表示装置、有機発光装置、それらの製造方法、および薄膜形成方法 |
| KR102081748B1 (ko) | 2012-08-09 | 2020-02-26 | 가부시키가이샤 아루박 | 성막 방법 및 성막 장치 |
| JP6230184B2 (ja) * | 2013-10-10 | 2017-11-15 | 株式会社アルバック | 成膜装置、成膜方法及び金属酸化物薄膜の製造方法 |
| JP2015157996A (ja) * | 2014-02-25 | 2015-09-03 | 東京エレクトロン株式会社 | 遷移金属膜の酸化処理方法および酸化処理装置 |
| WO2016094010A1 (en) * | 2014-12-09 | 2016-06-16 | Symetrix Memory, Llc | Transition metal oxide resistive switching device with doped buffer region |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2587426B2 (ja) * | 1987-08-21 | 1997-03-05 | 石塚電子株式会社 | 薄膜サ−ミスタの製造方法 |
| JPH0193088A (ja) * | 1987-10-02 | 1989-04-12 | Fujitsu Ltd | 強誘電薄膜の形成方法 |
| KR100363081B1 (ko) * | 1999-09-16 | 2002-11-30 | 삼성전자 주식회사 | 박막 형성장치 |
| JP2005203463A (ja) * | 2004-01-14 | 2005-07-28 | Sharp Corp | 不揮発性半導体記憶装置 |
| WO2005101420A1 (en) * | 2004-04-16 | 2005-10-27 | Matsushita Electric Industrial Co. Ltd. | Thin film memory device having a variable resistance |
| JP4358760B2 (ja) * | 2005-02-10 | 2009-11-04 | 日本電信電話株式会社 | ＬｉＮｂＯ３結晶薄膜成膜方法 |
| JP2007042784A (ja) * | 2005-08-02 | 2007-02-15 | Nippon Telegr & Teleph Corp <Ntt> | 金属酸化物素子及びその製造方法 |
-
2007
- 2007-03-26 JP JP2007080301A patent/JP2008244018A/ja active Pending
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