JP2008241827A - Electrooptical device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrooptical device in which an area of a display element and that of an imaging element can be extended on the same substrate and which requires no external power source, and to provide an electronic apparatus with the electrooptical device. <P>SOLUTION: A plurality of pixels each have a display element and an imaging element 2, the display element 1 has an organic EL element 10 connected to a driving transistor 20, and the imaging element 2 has a photodiode 30 connected to a control transistor 40, the photodiode 30 and organic EL element 10 being stacked at least partially one over the other with insulating layers 4 to 8 interposed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an electro-optical device and an electronic apparatus.

  2. Description of the Related Art Conventionally, an electro-optical device that includes a display element and an imaging element on a substrate on which a plurality of pixels are arranged in a matrix is known. As such an electro-optical device, a device in which a light receiving matrix and a display matrix are provided on the same substrate is disclosed (for example, see Patent Document 1). In Patent Document 1, the light receiving matrix includes a plurality of light receiving pixels arranged in a matrix, and an image sensor is formed in each light receiving pixel. The image sensor includes a light receiving portion and a thin film transistor (hereinafter abbreviated as TFT), and is formed by stacking the light receiving portion and the TFT. On the other hand, the display matrix is composed of a plurality of pixel electrodes and TFTs arranged in a matrix. An electrode layer is formed on the TFT of the display matrix.

In Patent Document 1, since the light receiving matrix and the display matrix are formed on the same substrate as described above, it is more economical than forming them as individual devices. In addition, the aperture ratio can be improved by stacking the TFT and the light receiving portion in the light receiving matrix and the TFT and the pixel electrode in the display matrix.
Japanese Patent No. 3374717

  However, in the conventional electro-optical device, since the light receiving matrix and the display matrix are provided on the same substrate, if the area of the light receiving matrix is enlarged to improve the performance of the imaging device, the area of the display matrix is reduced. There is a problem that display performance is reduced due to reduction. Further, if the display performance is improved by increasing the area of the display matrix, there is a problem that the area of the light receiving matrix has to be reduced and the imaging performance is deteriorated. Further, since a transmissive liquid crystal device is used as the electro-optical device, there is a problem that it is necessary to install a light source outside the substrate.

  Accordingly, the present invention provides an electro-optical device that can enlarge both the area of the display element and the imaging element on the same substrate and does not require an external light source, and an electronic apparatus including the electro-optical device. It is.

  In order to solve the above-described problems, an electro-optical device according to the present invention is an electro-optical device including a display element and an imaging element on a substrate in which a plurality of pixels are arranged in a matrix. Each of the pixels includes the display element and the imaging element, the display element includes an electro-optic element connected to a driving transistor, the imaging element includes a light receiving element connected to a control transistor, and the light receiving element The electro-optical element is laminated so that at least a part thereof is planarly overlapped with an insulating layer interposed therebetween.

  With this configuration, since the light receiving element and the electro-optical element are individually formed and stacked on different layers in the same pixel, the areas of the light receiving element and the electro-optical element are maximized in the pixel. Can do. Therefore, it is possible to overlap the display element and imaging element formation areas in the plane area of the substrate, and to enlarge both the display element and imaging element area of each pixel.

In the electro-optical device according to the aspect of the invention, the light receiving element includes a plurality of semiconductor layers, the semiconductor layer includes a P-type semiconductor layer and an N-type semiconductor layer, and at least one of the semiconductor layers is made of single crystal silicon. It is formed.
With this configuration, compared to the case where the semiconductor layer of the light receiving element is entirely formed of non-single-crystal silicon, electrical loss in the semiconductor layer is reduced, and more current is generated in the light receiving element. be able to. Therefore, the sensitivity of the light receiving element can be improved and the performance of the imaging element can be improved.

In the electro-optical device according to the aspect of the invention, the semiconductor layer of the driving transistor and the semiconductor layer of the control transistor are formed of polycrystalline silicon.
With this configuration, the driving transistor and the polycrystalline silicon semiconductor layer can be formed by a high-temperature polysilicon forming technique used in a normal process. Therefore, the process for forming the semiconductor layers of the control transistor and the drive transistor can be facilitated, and the productivity of the electro-optical device can be improved.

In the electro-optical device according to the aspect of the invention, the electro-optical element includes a first electrode connected to the driving transistor, a second electrode facing the first electrode, the first electrode, and the second electrode. An organic electroluminescence device comprising at least an organic light emitting layer sandwiched between the two.
With this configuration, the driving transistor can be operated based on the signal obtained by the above-described imaging element, and the organic light emitting layer of the electro-optical element can emit light. Therefore, each pixel of the electro-optical device can emit light without providing a light source outside the substrate, and an image can be displayed in the display area of the electro-optical device.

In the electro-optical device according to the aspect of the invention, the semiconductor layer of the control transistor is formed integrally with the semiconductor layer of the light receiving element.
With this configuration, the signal of the light receiving element can be directly taken out from the control transistor, and electrical loss and time loss can be reduced as compared with the case of passing through the wiring. In addition, the components of the electro-optical device can be reduced in common. Therefore, not only can the electro-optical device be made thinner, but also the manufacturing process of the electro-optical device can be facilitated and productivity can be improved.

In the electro-optical device according to the aspect of the invention, the light receiving element may include an insulating layer sandwiched between the P-type semiconductor layer and the N-type semiconductor layer.
With this configuration, the light receiving element can be a PIN photodiode. Therefore, the response speed of the light receiving element can be improved, and the performance of the imaging element can be improved.

In the electro-optical device according to the aspect of the invention, the light receiving element includes a high-resistance semiconductor layer having an electric resistance higher than that of the P-type semiconductor layer and the N-type semiconductor layer, and the high-resistance semiconductor layer is the P-type semiconductor layer. And the N-type semiconductor layer.
With this configuration, the light receiving element can be a PIN photodiode. Therefore, the response speed of the light receiving element can be improved, and the performance of the imaging element can be improved.

According to another aspect of the present invention, there is provided an electronic apparatus including the above-described electro-optical device.
The electronic apparatus according to the present invention has an electro-optical device that can enlarge both the area of the display element and the imaging element on the same substrate and does not require an external light source. And a high-performance electronic device having a compact image pickup unit and display unit.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the scale and number of each structure are different from each other in order to make each configuration recognizable.

<First embodiment>
[Organic electroluminescence equipment]
As shown in FIG. 1, a display element 1 and an imaging element 2 are provided in each pixel of an organic electroluminescence device (hereinafter abbreviated as an organic EL device 100). The display element 1 includes an organic EL element 10, a drive transistor 20 that drives the organic EL element 10, a pixel circuit (not shown), and the like. The imaging device 2 includes a photodiode 30 that is a light receiving element, a control transistor 40 that controls reading of a signal from the photodiode 30, an amplification circuit (not shown) that amplifies the signal from the photodiode 30, and the like. Yes.

As shown in FIG. 1, for example, an N-type semiconductor layer 31 constituting a semiconductor layer of the photodiode 30 is formed on a substrate 3 made of a transparent insulating material such as quartz. The N-type semiconductor layer 31 is formed of, for example, single crystal silicon, and is formed in an island shape for each pixel on the substrate 3. The N-type semiconductor layer 31 is doped with an impurity such as P (phosphorus), for example. A first insulating layer 4 is formed so as to cover the N-type semiconductor layer 31 and the substrate 3. The insulating layer 4 is formed of an insulating material such as SiO ₂ (silicon oxide).

On the insulating layer 4, a P-type semiconductor layer 32 is formed in an island shape so as to planarly overlap a formation region of the N-type semiconductor layer 31. The P-type semiconductor layer 32 is made of, for example, polycrystalline silicon. The P-type semiconductor layer 32 is in a state doped with an impurity such as B (boron), for example. A second insulating layer 5 is formed so as to cover the P-type semiconductor layer 32 and the insulating layer 4. The insulating layer 5 is formed of an insulating material such as SiO ₂ , for example.

  On the insulating layer 5, for example, light receiving element side electrodes 33 and 34 made of a conductive metal material such as Al (aluminum) are formed. The light receiving element side electrode 33 formed in the formation region of the N-type semiconductor layer 31 in the non-formation region of the P-type semiconductor layer 32 penetrates through the insulating layers 4 and 5 and reaches the surface of the N-type semiconductor layer 31. Is connected to the N-type semiconductor layer 31. Further, the light receiving element side electrode 34 formed in the formation region of the N-type semiconductor layer 31 and the P-type semiconductor layer 32 penetrates the insulating layer 5 through a contact hole 36 reaching the surface of the P-type semiconductor layer 32. The p-type semiconductor layer 32 is connected.

  Further, on the insulating layer 5, adjacent to the light receiving element side electrodes 33 and 34, amplification signal electrodes 51 and 52 made of a conductive metal material such as Al are formed. The light receiving element side electrodes 33 and 34 are electrically connected to the amplified signal electrodes 51 and 52 through an amplifier circuit. Further, on the insulating layer 5, the semiconductor layer 21 of the driving transistor 20 and the semiconductor layer 41 of the control transistor 40 are respectively formed on the island so as to overlap with the formation region of the N-type semiconductor layer 31 and the P-type semiconductor layer 32. It is formed in a shape. The semiconductor layer 21 of the drive transistor 20 and the semiconductor layer 41 of the control transistor 40 are made of, for example, polycrystalline silicon.

A third insulating layer 6 is formed so as to cover the surface of the insulating layer 5 and the semiconductor layers 21 and 41, the light receiving element side electrodes 33 and 34, and the amplification signal electrodes 51 and 52 on the insulating layer 5. The insulating layer 6 is made of an insulating material such as SiO ₂ , for example. On the insulating layer 6, for example, the scanning lines 22 and 42 made of a conductive metal material such as Al are partially planar at the substantially central portions of the semiconductor layers 21 and 41 of the driving transistor 20 and the control transistor 40. Are provided to overlap each other. The portions of the scanning lines 22 and 42 that overlap the semiconductor layers 21 and 41 in plan view function as the gate electrodes of the drive transistor 20 and the control transistor 40, respectively. The scanning lines 22 and 42 are each connected to a scanning line side driving circuit provided in the pixel circuit.

  Portions of the semiconductor layers 21 and 42 facing the scanning lines 22 and 42 are channel regions 21c and 41c of the drive transistor 20 and the control transistor 40, respectively. Source regions 21s and 41s and drain regions 21d and 41d are formed in the semiconductor layers 21 and 41 with the channel regions 21c and 41c interposed therebetween, respectively. The channel regions 21c and 41c are mainly doped with a dopant such as P (phosphorus), and the source regions 21s and 41s and the drain regions 21d and 41d are mainly doped with a dopant such as B (boron).

  In the drive transistor 20 and the control transistor 40, a low-concentration source region and a high-concentration source region are formed in the source regions 21s and 41s, respectively, in order from the channel regions 21c and 41c. Further, in the drain regions 21d and 41d, a low concentration drain region and a high concentration drain region are formed in this order from the channel regions 21c and 41c side. Thus, the drive transistor 20 and the control transistor 40 adopt an LDD (Lightly Doped Drain) structure.

  A fourth insulating layer 7 is formed so as to cover the surface of the insulating layer 6 and the scanning lines 22 and 42. On the insulating layer 7, source electrodes 23 and 43 and drain electrodes 24 and 44 of the drive transistor 20 and the control transistor 40 are formed. The source electrodes 23 and 43 and the drain electrodes 24 and 44 are made of a conductive metal material such as Al, for example. The source electrodes 23 and 43 and the drain electrodes 24 and 44 penetrate through the insulating layers 6 and 7, and contact holes 25, 26, 45, reaching the source regions 21s and 41s and the drain regions 21d and 41d of the semiconductor layers 21 and 41, respectively. 46 are connected to source regions 21s and 41s and drain regions 21d and 41d, respectively.

  On the insulating layer 7, pixel circuit side electrodes 53 and 54 are formed at positions overlapping the amplification signal electrodes 51 and 52 in a planar manner. The pixel circuit side electrodes 53 and 54 are formed of a conductive metal material such as Al, for example. The pixel circuit side electrodes 53 and 54 are connected to the amplified signal electrodes 51 and 52 through contact holes 55 and 56 that pass through the insulating layers 6 and 7 and reach the amplified signal electrodes 51 and 52. One pixel circuit side electrode 53 is connected to the source electrode 43 of the control transistor 40 by wiring or the like (not shown). The other pixel circuit side electrode 54 is connected to the pixel circuit. The drain electrode 44 of the control transistor 40 is also connected to the pixel circuit.

  A fifth insulating layer 8 is formed so as to cover the surface of the insulating layer 7, the source electrodes 23 and 43, the drain electrodes 24 and 44, and the pixel circuit side electrodes 53 and 54. On the insulating layer 8, the first electrode 11 constituting the anode of the organic EL element 10 is formed so as to overlap the photodiode 30 in a planar manner. The first electrode 11 is formed of a conductive metal material such as Al. The first electrode 11 is connected to the drain electrode 24 through the contact hole 12 that penetrates the insulating layer 8 and reaches the drain electrode 24 of the driving transistor 20. On the other hand, the source electrode 23 of the driving transistor 20 is connected to a data side driving circuit provided in the pixel circuit.

  An organic light emitting layer 13 is formed on substantially the entire surface of the first electrode 11 via a hole transport layer (not shown). The hole transport layer is formed of, for example, a mixture of a polythiophene derivative such as polyethylene dioxythiophene and polystyrene sulfonic acid. The organic light emitting layer 13 is formed of, for example, a fluorene polymer derivative. On the organic light emitting layer 13, the 2nd electrode 14 which comprises the cathode of the organic EL element 10 is formed. The second electrode 14 is formed of a transparent conductive material such as ITO (indium tin oxide). The second electrode 14 is connected to the pixel circuit.

A bank layer (not shown) for partitioning the organic EL elements 10 is provided between the organic EL elements 10 of each pixel. The bank layer is formed of an insulating material such as SiO ₂ or TiO ₂ . Further, a sealing portion (not shown) is provided on the second electrode 14 and the bank layer to prevent water and oxygen from entering and prevent the second electrode 14 or the organic light emitting layer 13 from being oxidized. A color filter 9 is provided on the lower side of the substrate 3 (opposite to the surface on which the photodiode 30 is formed).

  The pixel circuit includes a scanning side drive circuit (not shown) connected to the scanning lines 22 and 42. The scanning side driving circuit is for supplying a scanning signal to the scanning lines 22 and 42 of the control transistor 40 and the driving transistor 20, and includes, for example, a shift register and a level shifter. In addition, the pixel circuit includes a data side drive circuit that supplies an image signal to the source electrode 23 of the drive transistor 20 in accordance with the amplified signal supplied from the drain electrode 44 of the control transistor 40, a power supply line, and the like (not shown). ing. The data side drive circuit includes, for example, a shift register, a level shifter, a video line, an analog switch, and the like.

  The amplifying circuit includes a transistor for amplifying signals input from the light receiving element side electrodes 33 and 34 and outputting the amplified signals to the amplified signal electrodes 51 and 52. On the substrate 3, pixels configured to include the above-described imaging element 2 and display element 1 are arranged in a matrix in a plan view. Thereby, an imaging region is formed on the lower side (color filter 9 side) of the substrate 3 of the organic EL device 100, and the display region is planarly overlapped with the imaging region on the upper side of the substrate 3 (organic EL element 10 side). It is formed in the state.

  As described above, the organic EL device 100 of the present embodiment includes the color filter 9, the substrate 3, the light receiving element (photodiode 30), the amplifier circuit and the pixel circuit, and the organic EL element 10 as shown in FIG. The same substrate 3 is stacked in this order.

Next, the operation of this embodiment will be described.
As shown in FIGS. 1 and 2, the white light W incident from the lower side of the substrate 3 (color filter 9 side) toward the upper side of the substrate 3 (photodiode 30 side) is a color filter provided in each pixel. 9 passes through the light and becomes monochromatic light of R (red light), G (green light), or B (blue light), and enters the substrate 3 of each pixel corresponding to light of each color of R, G, and B. The light incident on the substrate 3 passes through the substrate 3 and enters the N-type semiconductor layer 31 of the photodiode 30 which is a light receiving element. When light enters the N-type semiconductor layer 31, an electromotive force is generated between the N-type semiconductor layer 31 and the P-type semiconductor layer 32 due to the photovoltaic effect.

  At this time, since the N-type semiconductor layer 31 of the photodiode 30 is formed of single crystal silicon, the electrical loss in the N-type semiconductor layer 31 can be reduced as compared with the case where it is formed of polycrystalline silicon or the like. Can do. Thereby, for example, about 10 times as much current can be generated in the photodiode 30. Therefore, the sensitivity of the photodiode 30 can be improved and the performance of the image sensor 2 can be improved.

  On the other hand, the semiconductor layers 21 and 41 of the drive transistor 20 and the control transistor 40 formed by being stacked on the photodiode 30 via the insulating layer 5 are formed of polycrystalline silicon. The polycrystalline silicon semiconductor layers 21 and 41 can be formed by a high-temperature polysilicon forming technique used in a normal process. Therefore, the formation process of the semiconductor layers 21 and 41 of the drive transistor 20 and the control transistor 40 can be facilitated, and the productivity of the organic EL device 100 can be improved.

Further, since the insulating layer 4 made of SiO ₂ or the like is formed between the N-type semiconductor layer 31 and the P-type semiconductor layer 32, the light receiving element can be a PIN photodiode 30. Therefore, the response speed of the photodiode 30 can be improved, and the imaging device 2 can be improved in performance.

  In addition, as described above, the photodiode 30 as the light receiving element and the organic EL element 10 as the electro-optical element are stacked so as to overlap in a plane via the insulating layers 4, 5, 6, 7, and 8. The photodiode 30 and the organic EL element 10 are individually formed in different layers in the same pixel. Thereby, without reducing the installation area of the organic EL element 10 in the pixel, the area of the photodiode 30 can be maximized, the current generated in the photodiode 30 can be increased, and the sensitivity can be improved.

  A signal (current) generated by the incidence of light on the N-type semiconductor layer 31 is amplified by an amplifier circuit connected to the light receiving element side electrodes 33 and 34 and is output to the amplified signal electrodes 51 and 52 as an amplified signal. . Here, the pixel circuit side electrodes 53 and 54 connected to the amplification signal electrodes 51 and 52 are respectively connected to the source electrode 43 of the control transistor 40 and the data drive side circuit of the pixel circuit via wirings or the like (not shown). It is connected. At this time, a signal for reading an amplified signal is transmitted from the drain electrode 44 of the control transistor 40 to the scanning line 42 of the control transistor 40 serving as a switching element at a predetermined timing by the scanning side driving circuit of the pixel circuit. The amplified signal is transmitted to the data side driving circuit at the timing. At this time, the control transistors 40 of the plurality of pixels are line-sequentially scanned, whereby the amplified signals of the respective pixels are transmitted line-sequentially to the data side driving circuit.

  The data side driving circuit transmits an image signal to the first electrode 11 of each pixel through the driving transistor 20 of each pixel based on the transmitted amplified signal. At this time, an image signal transmission signal is transmitted to the scanning line 22 of the driving transistor 20 as a switching element at a predetermined timing by the scanning side driving circuit of the pixel circuit. Thereby, the image signal transmitted from the data side driving circuit via the source electrode 23 and the drain electrode 24 of the driving transistor 20 is transmitted to the first electrode 11 at a predetermined timing.

  When an image signal is transmitted to the first electrode 11, a current flows between the first electrode 11 and the second electrode 14. At this time, the hole transport layer has a function of injecting (supplying) holes into the organic light emitting layer 13 and transports holes inside the hole transport layer. The holes injected from the hole transport layer into the organic light emitting layer 13 are recombined with the electrons injected (supplied) from the second electrode 14 into the organic light emitting layer 13 inside the organic light emitting layer 13. Thereby, the organic light emitting layer 13 emits light based on the image signal transmitted to the first electrode 11. As described above, the organic light emitting layer 13 of each pixel corresponding to each color of R, G, B emits light of each color of R, G, B according to the image signal as shown in FIG. An image based on the image captured in the area is displayed in the display area.

As described above, by using the top emission type organic EL element 10 as the electro-optical element, the display element 1 of each pixel can emit light without providing a light source outside the substrate 3.
In addition, as described above, the photodiode 30 as the light receiving element and the organic EL element 10 as the electro-optical element are stacked so as to overlap in a plane via the insulating layers 4, 5, 6, 7, and 8. The photodiode 30 and the organic EL element 10 are individually formed in different layers in the same pixel. Thereby, the area of the organic EL element 10 can be maximized in the pixel. Therefore, it is possible to overlap the formation areas of the display element 1 and the imaging element 2 in the plane area of the substrate 3 and to enlarge both the areas of the display element 1 and the imaging element 2 on the same substrate 3.

  Further, as shown in FIG. 2, the amplifier circuit is formed in the same layer as the pixel circuit, and is formed in a layer different from the organic EL element 10 and the photodiode 30 which is the light receiving element. There is no need to reduce the installation area of the photodiode 30. Therefore, both the area of the organic EL element 10 and the photodiode 30 can be enlarged.

Next, first and second modifications of the present embodiment shown in FIGS. 3 and 4 will be described.
The organic EL devices 200 and 300 shown in FIG. 3 and FIG. 4 are different from the organic EL device 100 shown in FIG. Since the other points are the same as those of the organic EL device 100 described above, the same portions are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 3, on the N-type semiconductor layer 31 of the organic EL device 200, a high-resistance semiconductor layer 37 is formed in an island shape except for a portion where the light receiving element side electrode 33 is formed. The high-resistance semiconductor layer 37 is formed of, for example, polycrystalline silicon or the like, and is in a state where impurities such as P (phosphorus) are doped at a lower concentration than the N-type semiconductor layer 31. Thereby, the high-resistance semiconductor layer 37 has a higher electrical resistance than the N-type semiconductor layer 31 and the P-type semiconductor layer 32. On the high resistance semiconductor layer 37, a P-type semiconductor layer 32 is formed on substantially the entire surface of the high resistance semiconductor layer 37. An insulating layer 5 is formed so as to cover the surface of the substrate 3, the P-type semiconductor layer 32 and the N-type semiconductor layer 31.

  As described above, by providing the high-resistance semiconductor layer 37 between the N-type semiconductor layer 31 and the P-type semiconductor layer 32, the light receiving element is connected to the PIN-type photodiode 230 in the same manner as the organic EL device 100 of FIG. can do. Therefore, the response speed of the light receiving element can be improved, and the performance of the imaging element 202 can be improved.

  As shown in FIG. 4, a P-type semiconductor layer 32 is formed directly on the N-type semiconductor layer 31 of the organic EL device 300. That is, the light receiving element is a PN type photodiode 330. At this time, it is not necessary to form the insulating layer 4 shown in FIG. 1 or the high-resistance semiconductor layer 37 shown in FIG. Therefore, the manufacturing process of the organic EL device 300 can be simplified and the productivity can be improved. In addition, the organic EL device 300 can be thinned. Furthermore, the usage amount of the insulating material and the semiconductor material can be reduced, and the cost can be reduced.

<Second embodiment>
[Organic electroluminescence equipment]
Next, a second embodiment of the present invention will be described with reference to FIGS. The organic EL device 100 ′ of the present embodiment is the organic EL device described in the first embodiment in that the P-type semiconductor layer 32 ′ of the photodiode 30 ′ is integrated with the semiconductor layer 41 ′ of the control transistor 40 ′. Different from the device 100. Since the other points are the same as in the first embodiment, the same parts are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 5, a first insulating layer 4 is formed so as to cover the N-type semiconductor layer 31 and the substrate 3. On the insulating layer 4, a P-type semiconductor layer 32 ′ is formed in an island shape so as to overlap the formation region of the N-type semiconductor layer 31 in a planar manner. Here, the P-type semiconductor layer 32 ′ extends on the insulating layer 4 to the region where the N-type semiconductor layer 31 is not formed, and is formed integrally with the semiconductor layer 41 ′ of the control transistor 40 ′. That is, in this embodiment, the source region 41s ′ of the control transistor 40 ′ also serves as the P-type semiconductor layer 32 ′ of the photodiode 30 ′.

  Further, on the insulating layer 4, the semiconductor layer 21 of the drive transistor 20 is formed in a region where the N-type semiconductor layer 31 and the P-type semiconductor layer 32 ′ are not formed. Then, without forming the insulating layer 5 (see FIG. 1), as shown in FIG. 5, the surface of the insulating layer 4, the P-type semiconductor layer 32 ′, and the semiconductor layer 21 of the driving transistor 20 are covered, An insulating layer 6 is formed. Further, the scanning lines 22 and 42 of the drive transistor 20 and the control transistor 40 ′ are formed on the insulating layer 6 as in the first embodiment. Further, as in the first embodiment, the source electrodes 23 and 43 and the drain electrodes 24 and 44 of the drive transistor 20 and the control transistor 40 ′ are formed on the insulating layer 7.

  Here, the source electrode 43 and the drain electrode 44 of the control transistor 40 'are connected to an amplifier circuit. The source electrode 23 of the driving transistor 20 is connected to a data side driving circuit provided in the pixel circuit. The drain electrode 24 of the drive transistor 20 is connected to the first electrode 11 as in the first embodiment. The amplifier circuit is configured to amplify signals detected from the source electrode 43 and the drain electrode 44 of the control transistor 40 'and transmit the amplified signals to the pixel circuit as amplified signals. The pixel circuit is configured to transmit an image signal to the source electrode 23 of the drive transistor 20 based on the amplified signal transmitted from the amplifier circuit.

  As described above, the organic EL device 100 ′ of the present embodiment includes the color filter 9, the substrate 3, the light receiving element (photodiode 30 ′), the amplifier circuit, the pixel circuit, and the organic EL element 10 as shown in FIG. However, it has the structure laminated | stacked in this order in the same board | substrate 3. FIG.

Next, the operation of this embodiment will be described.
As shown in FIGS. 5 and 6, the white light W incident from the lower side of the substrate 3 (color filter 9 side) toward the upper side of the substrate 3 (photodiode 30 ′ side) is a color provided in each pixel. The light passes through the filter 9 and becomes monochromatic light of R (red light), G (green light), or B (blue light), and enters the substrate 3 of each pixel corresponding to light of each color of R, G, and B. . The light incident on the substrate 3 passes through the substrate 3 and enters the N-type semiconductor layer 31 of the photodiode 30 ′ that is a light receiving element. When light enters the N-type semiconductor layer 31, an electromotive force is generated between the N-type semiconductor layer 31 and the P-type semiconductor layer 32 'due to the photovoltaic effect.

At this time, as in the first embodiment, the N-type semiconductor layer 31 of the photodiode is formed of single crystal silicon, the P-type semiconductor layer 32 ′ (the semiconductor layer 41 ′ of the control transistor 40 ′), and the semiconductor layer of the drive transistor 20. 21 is formed of polycrystalline silicon. A first insulating layer 4 made of SiO ₂ or the like is formed between the N-type semiconductor layer 31 and the P-type semiconductor layer 32 ′. Further, the photodiode 30 ′ as a light receiving element and the organic EL element 10 as an electro-optical element are stacked so as to overlap in a plane via insulating layers 4, 6, 7, and 8. Therefore, the same effect as that of the first embodiment can be obtained.

  In addition, according to the present embodiment, the semiconductor layer 41 ′ of the control transistor 40 ′ is formed integrally with the P-type semiconductor layer 32 ′ of the photodiode 30 ′. There is no need to form layer 5. Therefore, the manufacturing process of the organic EL device 100 ′ can be simplified and the productivity can be improved. In addition, the organic EL device 100 ′ can be reduced in thickness, and the usage amount of the insulating material and the semiconductor material can be reduced, thereby reducing the cost.

  A signal (current) generated when light is incident on the N-type semiconductor layer 31 is read into the scanning line 42 of the control transistor 40 ′, which is a switching element, at a predetermined timing by the scanning side driving circuit of the pixel circuit. Is transmitted to the amplifier circuit at a predetermined timing via the source electrode 43 and the drain electrode 44 of the control transistor 40 ′. The signal transmitted to the amplifier circuit is transmitted to the data side drive circuit of the pixel circuit as an amplified signal. At this time, by performing line sequential scanning of the control transistors 40 'of a plurality of pixels, the amplified signals of the respective pixels are transmitted to the data side driving circuit in a line sequential manner.

  The data side driving circuit transmits an image signal to the first electrode 11 of each pixel via the source electrode 23 and the drain electrode 24 of the driving transistor 20 of each pixel based on the transmitted amplified signal. At this time, an image signal transmission signal is transmitted to the scanning line 22 of the driving transistor 20 as a switching element at a predetermined timing by the scanning side driving circuit of the pixel circuit. Accordingly, the image signal transmitted from the data side driving circuit to the source electrode 23 of the driving transistor 20 is transmitted to the first electrode 11 through the drain electrode 24 at a predetermined timing.

  When an image signal is transmitted to the first electrode 11, a current flows between the first electrode 11 and the second electrode 14. Thereby, as in the first embodiment, the organic light emitting layer 13 emits light based on the image signal transmitted to the first electrode 11, and the organic light emitting layer 13 of each pixel corresponding to each color of R, G, and B By emitting light of each color of R, G, and B according to the image signal, an image based on the image captured in the imaging region is displayed in the display region.

Thus, by using the top emission type organic EL element 10 as the electro-optic element, the display element 1 of each pixel is caused to emit light without providing a light source outside the substrate 3 as in the first embodiment. Can do.
Further, as described above, the photodiode 30 ′, which is a light receiving element, and the organic EL element 10, which is an electro-optic element, are stacked so as to overlap in a plane via the insulating layers 4, 6, 7, and 8. Thus, as in the first embodiment, the area of the organic EL element 10 can be maximized in the pixel. Therefore, the display element 1 and the imaging element 2 ′ can be shared in the plane area of the substrate 3, and the areas of the display element 1 and the imaging element 2 ′ can be enlarged on the same substrate 3.

  Further, as shown in FIG. 6, the amplification circuit is formed in the same layer as the photodiode 30 ′ as the light receiving element, and the pixel circuit and the EL element are formed in different layers, so that the installation area of the pixel circuit is expanded. It is possible to cope with the complexity of the pixel circuit. Moreover, the area of the organic EL element 10 can be expanded.

Next, first and second modifications of the present embodiment shown in FIGS. 7 and 8 will be described.
The organic EL device shown in FIGS. 7 and 8 is different from the organic EL device 100 ′ shown in FIG. 5 described above in the configuration of the semiconductor layer of the photodiode. Since the other points are the same as those of the organic EL device 100 ′ described above, the same portions are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 7, on the N-type semiconductor layer 31 of the organic EL device 200 ′, a high-resistance semiconductor layer 37 similar to the organic EL device 200 shown in FIG. Has been. On the high-resistance semiconductor layer 37, a P-type semiconductor layer 32 ′ is formed on substantially the entire surface of the high-resistance semiconductor layer 37 in the same manner as the semiconductor layer 41 ′ of the control transistor 40 ′, like the organic EL device 100 ′ shown in FIG. Is formed. An insulating layer 4 is formed in a region where the N-type semiconductor layer 31 and the high-resistance semiconductor layer 37 are not formed on the substrate 3.

  As described above, by providing the high-resistance semiconductor layer 37 between the N-type semiconductor layer 31 and the P-type semiconductor layer 32 ′, the light receiving element is made to be a PIN-type photo, similarly to the organic EL device 100 ′ shown in FIG. 5. It can be a diode 230 '. Therefore, the response speed of the light receiving element can be improved, and the performance of the imaging element can be improved.

  As shown in FIG. 8, a P-type semiconductor layer 32 ′ (semiconductor layer 41 ′) is formed directly on the N-type semiconductor layer 31 of the organic EL device 300 ′, similarly to the organic EL device 300 shown in FIG. 4. Has been. That is, the light receiving element is a PN type photodiode 330 ′. At this time, it is not necessary to form the second insulating layer 5 shown in FIG. 1 or the high-resistance semiconductor layer 37 shown in FIG. Therefore, the manufacturing process of the organic EL device 300 ′ can be simplified and the productivity can be improved. Further, it is possible to reduce the thickness of the organic EL device 300 ′. Furthermore, the usage amount of the insulating material and the semiconductor material can be reduced, and the cost can be reduced.

[Electronics]
Next, an example of an electronic device including the organic EL device described in the above embodiment will be described.
As shown in FIG. 9, a digital still camera 900 includes a case 901, a display panel 902 that is provided behind the case 901 and includes the display element of the organic EL device according to the above-described embodiment, and the observation side of the case 901 (in the drawing). A light receiving unit 903 including an optical lens or the like provided on the back surface side, a shutter button 904, and a circuit board 905 on which an image signal of the image pickup device of the organic EL device is transferred and stored when the shutter button 904 is pressed. And. On the display panel 902, display is performed based on an image signal generated by photoelectric conversion by the imaging element of the organic EL device.

  In the digital still camera 900, a video signal output terminal 906 and an input / output terminal 907 for data communication are provided on the side of the case 901. As shown in FIG. 9, a television monitor 1000 is connected to the video signal output terminal 906, and a personal computer 1100 is connected to the latter input / output terminal 907 for data communication as required. By this operation, the image pickup signal stored in the memory of the circuit board 905 is output to the television monitor 1000 or the personal computer 1100.

  As described above, the digital still camera 900 shown in FIG. 9 can enlarge both the area of the display element and the imaging element on the same substrate as described in the above-described embodiment, and does not require an external light source. Since the EL device is provided in the display panel 902, a high-performance electronic device including a compact imaging unit and display unit that has both a high-performance imaging function and a display function is obtained.

It should be noted that the technical scope of the present invention is not limited to the above-described embodiment, and includes those in which various modifications are made to the above-described embodiment without departing from the gist of the present invention.
For example, light shielding means for preventing light incident from the imaging element side from entering the semiconductor layers of the drive transistor and the control transistor may be provided between the light receiving element and the drive transistor and the control transistor.

  Further, a signal output by a photodiode as a light receiving element and amplified by an amplifier circuit may be sampled, transmitted to an external memory or the like, and stored. Thereby, the image image | photographed with the image pick-up element can be preserve | saved at external memory.

  In addition, the electronic apparatus provided with the organic EL device according to the present invention is not limited to the above-described ones. For example, a viewfinder type / monitor direct-view type digital video camera, or infrared light or ultraviolet light. Examples thereof include a head mounted display, a night vision scope, and a display monitor with an imaging function for processing and observing light having a wavelength that cannot be directly observed with the naked eye.

It is a section lineblock diagram of one pixel of an organic EL device in a first embodiment of the present invention. It is a schematic diagram which shows the laminated structure of an organic EL apparatus equally. FIG. 6 is a cross-sectional configuration diagram illustrating a first modification of one pixel of the organic EL device. FIG. 6 is a cross-sectional configuration diagram illustrating a second modification of one pixel of the organic EL device. It is a section lineblock diagram of one pixel of an organic EL device in a second embodiment of the present invention. It is a schematic diagram which shows the laminated structure of an organic EL apparatus equally. FIG. 6 is a cross-sectional configuration diagram illustrating a first modification of one pixel of the organic EL device. FIG. 6 is a cross-sectional configuration diagram illustrating a second modification of one pixel of the organic EL device. It is a schematic block diagram which shows an example of the electronic device in embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Display element, 2 Imaging element, 3 Substrate, 4, 5, 6, 7, 8 Insulating layer, 10 Organic electroluminescent element (electro-optic element), 11 First electrode, 13 Organic light emitting layer, 14 Second electrode, 20 Drive transistor, 21 semiconductor layer, 30, 30 ′, 230, 230 ′, 330, 330 ′ photodiode (light receiving element), 31 N-type semiconductor layer (semiconductor layer), 32, 32 ′ P-type semiconductor layer (semiconductor layer) 37 High-resistance semiconductor layer (semiconductor layer), 40, 40 'control transistor, 41, 41' semiconductor layer, 100, 100 ', 200, 200', 300, 300 'Organic EL device (electro-optical device), 900 Digital Still camera (electronic equipment)

Claims (8)

An electro-optical device including a display element and an imaging element on a substrate on which a plurality of pixels are arranged in a matrix,
Each of the plurality of pixels includes the display element and the imaging element, the display element includes an electro-optic element connected to a driving transistor, the imaging element includes a light receiving element connected to a control transistor, and the light receiving element An electro-optical device, wherein an element and the electro-optical element are stacked so that at least a part thereof is planarly overlapped with an insulating layer interposed therebetween.   The light receiving element includes a plurality of semiconductor layers, the semiconductor layer includes a P-type semiconductor layer and an N-type semiconductor layer, and at least one of the semiconductor layers is formed of single crystal silicon. The electro-optical device according to Item 1.   3. The electro-optical device according to claim 2, wherein the semiconductor layer of the driving transistor and the semiconductor layer of the control transistor are formed of polycrystalline silicon.   The electro-optic element includes a first electrode connected to the driving transistor, a second electrode facing the first electrode, an organic light emitting layer sandwiched between the first electrode and the second electrode, 4. The electro-optical device according to claim 1, wherein the electro-optical device includes at least an organic electroluminescence element.   The electro-optical device according to claim 2, wherein the semiconductor layer of the control transistor is formed integrally with the semiconductor layer of the light receiving element.   6. The electro-optical device according to claim 2, wherein the light receiving element includes an insulating layer sandwiched between the P-type semiconductor layer and the N-type semiconductor layer.   The light receiving element includes a high-resistance semiconductor layer having higher electrical resistance than the P-type semiconductor layer and the N-type semiconductor layer, and the high-resistance semiconductor layer is sandwiched between the P-type semiconductor layer and the N-type semiconductor layer. 6. The electro-optical device according to claim 2, wherein the electro-optical device is provided.   An electronic apparatus comprising the electro-optical device according to claim 1.

Images