JP2008218611A5 - - Google Patents

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Publication number
JP2008218611A5
JP2008218611A5 JP2007052411A JP2007052411A JP2008218611A5 JP 2008218611 A5 JP2008218611 A5 JP 2008218611A5 JP 2007052411 A JP2007052411 A JP 2007052411A JP 2007052411 A JP2007052411 A JP 2007052411A JP 2008218611 A5 JP2008218611 A5 JP 2008218611A5
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JP
Japan
Prior art keywords
gate
internal wiring
semiconductor
resistance
temperature coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
JP2007052411A
Other languages
English (en)
Japanese (ja)
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JP2008218611A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007052411A priority Critical patent/JP2008218611A/ja
Priority claimed from JP2007052411A external-priority patent/JP2008218611A/ja
Publication of JP2008218611A publication Critical patent/JP2008218611A/ja
Publication of JP2008218611A5 publication Critical patent/JP2008218611A5/ja
Revoked legal-status Critical Current

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JP2007052411A 2007-03-02 2007-03-02 半導体装置 Revoked JP2008218611A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007052411A JP2008218611A (ja) 2007-03-02 2007-03-02 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007052411A JP2008218611A (ja) 2007-03-02 2007-03-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2008218611A JP2008218611A (ja) 2008-09-18
JP2008218611A5 true JP2008218611A5 (enExample) 2010-03-25

Family

ID=39838316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007052411A Revoked JP2008218611A (ja) 2007-03-02 2007-03-02 半導体装置

Country Status (1)

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JP (1) JP2008218611A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5369868B2 (ja) * 2009-04-24 2013-12-18 トヨタ自動車株式会社 半導体装置
JP2013005067A (ja) * 2011-06-14 2013-01-07 Hitachi Automotive Systems Ltd 電力変換装置
JP6044215B2 (ja) * 2012-09-13 2016-12-14 富士電機株式会社 半導体装置
WO2016103431A1 (ja) * 2014-12-26 2016-06-30 株式会社日立製作所 半導体モジュールおよびそれを搭載した電力変換装置
JP6576846B2 (ja) * 2016-01-27 2019-09-18 株式会社日立製作所 電力変換装置
US10403623B2 (en) * 2017-07-06 2019-09-03 General Electric Company Gate networks having positive temperature coefficients of resistance (PTC) for semiconductor power conversion devices
JP6896154B2 (ja) 2018-03-28 2021-06-30 三菱電機株式会社 半導体装置
EP3598505B1 (en) * 2018-07-19 2023-02-15 Mitsubishi Electric R&D Centre Europe B.V. Temperature estimation of a power semiconductor device
EP3955463A1 (de) * 2020-08-10 2022-02-16 Siemens Aktiengesellschaft Parallelschaltung von halbleiterschaltern

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