JP2008113234A - Crystal oscillator - Google Patents

Crystal oscillator Download PDF

Info

Publication number
JP2008113234A
JP2008113234A JP2006294919A JP2006294919A JP2008113234A JP 2008113234 A JP2008113234 A JP 2008113234A JP 2006294919 A JP2006294919 A JP 2006294919A JP 2006294919 A JP2006294919 A JP 2006294919A JP 2008113234 A JP2008113234 A JP 2008113234A
Authority
JP
Japan
Prior art keywords
crystal
space
container
crystal oscillator
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006294919A
Other languages
Japanese (ja)
Inventor
Takahiro Niiyama
高弘 新山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Crystal Device Corp
Original Assignee
Kyocera Crystal Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Crystal Device Corp filed Critical Kyocera Crystal Device Corp
Priority to JP2006294919A priority Critical patent/JP2008113234A/en
Publication of JP2008113234A publication Critical patent/JP2008113234A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystal oscillator of an excellent reflow characteristic having a crystal vibration element of a main electrode layer structure which does not lower adhesion strength between a support part and the crystal vibration element even though the crystal vibration element is made compact in accordance with compactness and the area of an extracting electrode is made small. <P>SOLUTION: In the crystal oscillator, an integrated circuit element including an oscillation circuit is mounted on the surface principal plane of an insulative substrate of a container of a recessed shape surrounding a first space part of the surface principal plane of the insulative substrate, the crystal vibration element connected to the integrated circuit element through a connection electrode part is housed in a container also having a recessed shape surrounding a second space part formed on the top surface of the first space part of the insulative substrate, the containers surrounding the first and the second space parts are connected through the connection electrode part, and a lid is mounted on the top edge part of an opening of the container surrounding the second space part to perform hermetic sealing. In the main electrode layer structure of the crystal oscillator, the number of sums of film thickness of the both sides of a ground main electrode layer made of a high-melting point metal attached to the front and rear faces of the internal crystal vibration element is ≥30 Å and ≤90 Å. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、水晶振動子の小型化により、水晶振動素子自体も小型化されて、引き出し電極面積が小さくなっても支持部と水晶振動素子との密着強度を小さくすることがない主電極層構造を有する水晶振動素子が搭載された、良好なリフロー特性を有する水晶発振器に関する。       The present invention provides a main electrode layer structure in which the crystal resonator element itself is also miniaturized due to the miniaturization of the crystal resonator, and the adhesion strength between the support portion and the crystal resonator element is not reduced even when the lead electrode area is reduced. The present invention relates to a crystal oscillator having a good reflow characteristic, in which a crystal resonator element having the above is mounted.

独立した電子部品の一つにもなる水晶発振器の水晶振動子の部分は、水晶振動素子の表裏主面上に、水晶振動素子を励振させる励振電極と、水晶振動素子を収納するベース容器に形成される支持部との接続をとるための接続用電極と、励振電極と接続用電極とを導通接続する引き出し電極とを形成して構成される。水晶振動子の小型化に伴い、水晶振動素子の形状として小型の短冊形状が主流となって来ている。更に小型化に対応するために、従来では水晶振動素子側の引き出し電極とベース容器側の支持部との導通固着手段として導電性接合材を使用していた。       The crystal unit of the crystal oscillator, which is one of the independent electronic components, is formed on the front and back main surfaces of the crystal resonator element on the excitation electrode that excites the crystal resonator element and the base container that houses the crystal resonator element. A connection electrode for connecting to the support portion to be connected and a lead electrode for conductively connecting the excitation electrode and the connection electrode are formed. With the miniaturization of crystal resonators, small strip shapes have become mainstream as the shape of crystal resonator elements. In order to cope with further downsizing, conventionally, a conductive bonding material has been used as a conductive fixing means between the extraction electrode on the quartz-crystal vibrating element side and the support portion on the base container side.

図5は、従来技術の一例として、各種電極を形成した水晶振動素子52をベース容器56に収納し導電性接合材58により導通固着した状態を示した水晶振動子50の断面図である。即ち、水晶振動素子52を構成する水晶振動素子52の表裏主面上には、対向する励振電極53と、励振電極53から水晶振動素子52の一方の短辺へ延設した接続用電極54と、接続用電極54と電気的に接続し且つベース容器56側の支持部57との導通を取るための引き出し電極55とが形成されている。       FIG. 5 is a cross-sectional view of a crystal resonator 50 showing a state in which a crystal resonator element 52 having various electrodes formed therein is housed in a base container 56 and conductively fixed by a conductive bonding material 58 as an example of the prior art. That is, on the front and back main surfaces of the crystal resonator element 52 constituting the crystal resonator element 52, the opposing excitation electrode 53 and the connection electrode 54 extending from the excitation electrode 53 to one short side of the crystal resonator element 52 are provided. A lead electrode 55 is formed to be electrically connected to the connection electrode 54 and to be electrically connected to the support portion 57 on the base container 56 side.

このように構成された水晶振動素子52を、ベース容器56の空間内にベース容器56内部底面にほぼ平行になるように配置する。その際に、水晶振動素子52側の引き出し電極55とベース容器56側の支持部57との間を、銀等の金属材料を含んだ銀ペーストといった導電性接合材58により導通接続を行っている。又、この導電性接合材58は水晶振動素子52をベース容器56内部で姿勢保持も行っている。水晶振動素子52を内部空間に搭載したベース容器56の開口部に、金属製の蓋体59を配置し、ベース容器56の内部空間を気密封止することで、水晶振動子50が形成される。
前述のような水晶振動素子52については、以下のような文献が開示されている。
The crystal resonator element 52 configured as described above is disposed in the space of the base container 56 so as to be substantially parallel to the inner bottom surface of the base container 56. At that time, the conductive connection material 58 such as a silver paste containing a metal material such as silver is connected between the extraction electrode 55 on the crystal resonator element 52 side and the support portion 57 on the base container 56 side. . The conductive bonding material 58 also holds the crystal vibrating element 52 in the base container 56. The crystal resonator 50 is formed by disposing a metal lid 59 in the opening of the base container 56 in which the crystal resonator element 52 is mounted in the internal space and hermetically sealing the internal space of the base container 56. .
The following documents are disclosed about the crystal vibrating element 52 as described above.

特開2002−050937号公報JP 2002-050937 A

尚、出願人は前記した先行技術文献情報で特定される先行技術文献以外に本発明に関連する先行技術文献を、本件出願時までに発見するに至らなかった。       Incidentally, the applicant has not found any prior art documents related to the present invention other than the prior art documents specified by the above prior art document information by the time of filing of the present application.

しかしながら、水晶振動子の小型化が進むにつれ、水晶振動子内部に搭載する水晶振動素子自体もその小型化が必須となり、それに伴い水晶振動素子主面上に接続用電極が形成できる領域が非常に狭くなり、引き出し電極形状が小さくなっている。そのため、引き出し電極の形成面積内に配置するベース容器上の支持部面積も小さくなり、その結果、支持部と引き出し電極間の接着強度が弱くなってしまい、最悪の場合、導通不良を起こす結果となるおそれがある。更に接触面積が小さいことから、水晶振動素子を保持する強度も弱く、水晶振動素子に外部より力が加わることで水晶振動素子の脱落が起こるおそれが高くなる。これらの不具合を回避するため、従来では、水晶振動素子を支持部へ実装する際に、水晶振動素子の側面にまで導電性接合材が被覆されるように水晶振動素子を支持部へ実装することで、水晶振動素子の保持接着強度の向上を図るなどしていたが、その結果、導電性接合材から水晶振動素子自体に必要以上のストレスが加わってしまい水晶振動素子の振動特性が不安定となりリフロー特性の周波数変動が大きくなるおそれがあるという問題があった。       However, as miniaturization of crystal resonators progresses, the crystal resonator element mounted inside the crystal resonator itself must be miniaturized, and as a result, a region where connection electrodes can be formed on the main surface of the crystal resonator element has become extremely large. Narrower and smaller lead electrode shape. Therefore, the area of the support part on the base container arranged within the formation area of the extraction electrode is also reduced, and as a result, the adhesive strength between the support part and the extraction electrode is weakened. There is a risk. Further, since the contact area is small, the strength for holding the crystal resonator element is also weak, and there is a high possibility that the crystal resonator element will drop off when a force is applied to the crystal resonator element from the outside. In order to avoid these problems, conventionally, when mounting the crystal resonator element on the support portion, the crystal resonator element is mounted on the support portion so that the conductive bonding material is covered to the side surface of the crystal resonator element. However, as a result, excessive stress was applied to the crystal resonator element itself from the conductive bonding material, making the vibration characteristics of the crystal resonator element unstable. There is a problem that the frequency fluctuation of the reflow characteristic may be increased.

本発明は上記欠点に鑑み考え出されたものであり、従ってその目的は、水晶発振器の水晶振動子の部分の小型化により、水晶振動素子自体も小型化されるにつれて引き出し電極面積が小さくなり、従来に比べて導電性接合材の使用出来得る量が制約された場合においても支持部と水晶振動素子との密着強度を小さくすることが無い、支持部と引き出し電極間の接着強度を確保する手段に関わらない水晶素板での残留応力の影響を減じた主電極層構造を有する水晶振動素子が搭載された、良好なリフロー特性を有する水晶発振器を提供することにある。       The present invention has been conceived in view of the above-mentioned drawbacks, and therefore, the purpose of the present invention is to reduce the area of the extraction electrode as the crystal resonator element itself is downsized by downsizing the crystal unit of the crystal oscillator. Means for ensuring the adhesive strength between the support portion and the extraction electrode without reducing the adhesion strength between the support portion and the crystal resonator element even when the amount of the conductive bonding material that can be used is limited compared to the conventional case. It is an object of the present invention to provide a crystal oscillator having a good reflow characteristic, in which a crystal resonator element having a main electrode layer structure in which the influence of a residual stress on a crystal base plate irrespective of this is reduced is mounted.

本発明の水晶発振器は、絶縁性基体の表主面に設けられた第1の空間部を囲う凹形状をした容器内の絶縁性基体の表主面上には発振回路が組み込まれた集積回路素子が搭載されており、絶縁性基体の第1の空間部上面に形成された第2の空間部を囲う同じく凹形状の容器内には先の集積回路素子に接続電極部を通じて電気的に接続される水晶振動素子が収容されており、第1の空間部を囲う容器と第2の空間部を囲う容器は接続電極部を介して接合されており、第2の空間部を囲う容器の開口上縁部に蓋体が載置され気密封止される水晶発振器において、先の水晶振動素子の表裏面に付けられた高融点金属から成る下地主電極層の両面の膜厚の和数が30Å以上、90Å以下とされていることを特徴とする。       The crystal oscillator according to the present invention is an integrated circuit in which an oscillation circuit is incorporated on the front main surface of the insulating base in a concave container surrounding the first space provided on the front main surface of the insulating base. An element is mounted and electrically connected to the previous integrated circuit element through a connection electrode in a concave container surrounding the second space formed on the upper surface of the first space of the insulating substrate. The container that surrounds the first space and the container that surrounds the second space are joined via the connection electrode portion, and an opening of the container that surrounds the second space In a quartz oscillator in which a lid is placed and hermetically sealed on the upper edge, the sum of the thicknesses of both surfaces of the base main electrode layer made of a refractory metal attached to the front and back surfaces of the previous quartz resonator element is 30 mm. As described above, it is characterized by being 90 mm or less.

また、本発明の水晶発振器は、上記構成において、先の下地主電極層がクロム(Cr)から形成されていることを特徴とする。 The crystal oscillator according to the present invention is characterized in that, in the above configuration, the base main electrode layer is made of chromium (Cr).

本発明の水晶発振器によれば、絶縁性基体の表主面に設けられた第1の空間部を囲う凹形状をした容器内の絶縁性基体の表主面上には発振回路が組み込まれた集積回路素子が搭載されており、絶縁性基体の第1の空間部上面に形成された第2の空間部を囲う同じく凹形状の容器内には先の集積回路素子に接続電極部を通じて電気的に接続される水晶振動素子が収容されており、第1の空間部を囲う容器と第2の空間部を囲う容器は接続電極部を介して接合されており、第2の空間部を囲う容器の開口上縁部に蓋体が載置され気密封止される水晶発振器において、先の水晶振動素子の表裏面に付けられた高融点金属から成る下地主電極層の両面の膜厚の和数が30Å以上、90Å以下とされ、下地主電極層のCr膜厚を薄くされることで、残留応力の開放がし易くなるのでリフロー特性(水晶振動子を実装回路基板上にリフロー実装した時の加熱により水晶振動素子内の残留応力が開放された結果、周波数変動を起こす特性)の周波数変動を抑えることが可能となる。       According to the crystal oscillator of the present invention, the oscillation circuit is incorporated on the front main surface of the insulating base in the concave container surrounding the first space provided on the front main surface of the insulating base. An integrated circuit element is mounted and electrically connected to the previous integrated circuit element through a connection electrode portion in a concave container surrounding the second space formed on the upper surface of the first space of the insulating substrate. A container that surrounds the first space part and a container that surrounds the second space part are joined via the connection electrode part, and the container that surrounds the second space part. In a quartz oscillator in which a lid is placed on the upper edge of the opening and hermetically sealed, the sum of the film thickness on both sides of the base main electrode layer made of a refractory metal attached to the front and back surfaces of the previous crystal resonator element Is 30 mm or more and 90 mm or less, and the residual main electrode layer is made thin by reducing the Cr film thickness. Since it is easy to release the force, the frequency fluctuation of the reflow characteristic (the characteristic that causes the frequency fluctuation as a result of the release of the residual stress in the crystal vibration element by heating when the crystal oscillator is reflow mounted on the mounting circuit board) It becomes possible to suppress.

以下、本発明を添付図面に基づいて詳細に説明する。なお、各図においての同一の符号は同じ対象を示すものとする。       Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In addition, the same code | symbol in each figure shall show the same object.

図1は本発明の実施形態における水晶発振器の図2に示すX−X’線断面図であり、図2は本発明の水晶発振器の水晶振動子部分から蓋体4を取り外し、第2の空間部9を上面から見た上面図である。図1に示す水晶発振器は、集積回路素子7を収容する第1の空間部15を有する絶縁性基体10の下面に電極端子19が設けられ、集積回路素子7を収容する第1の空間部15を有する絶縁性基体10の上面には集積回路素子7が搭載されている。また、集積回路素子7を収容する第1の空間部15を有する絶縁性基体10の第1の空間部15を囲う側面には壁体13、壁体13の外側面には複数個の書込制御端子11が形成されている。また、図1に示すように壁体13の上面には、水晶振動素子5が収容されている水晶振動子1を載置して固定した構造を有している。       FIG. 1 is a cross-sectional view of the crystal oscillator according to the embodiment of the present invention taken along line XX ′ shown in FIG. 2, and FIG. 2 shows a second space in which the lid 4 is removed from the crystal unit of the crystal oscillator of the present invention. It is the top view which looked at the part 9 from the upper surface. The crystal oscillator shown in FIG. 1 is provided with an electrode terminal 19 on the lower surface of an insulating substrate 10 having a first space portion 15 for accommodating the integrated circuit element 7, and the first space portion 15 for accommodating the integrated circuit element 7. The integrated circuit element 7 is mounted on the upper surface of the insulating substrate 10 having the above. In addition, a side wall surrounding the first space portion 15 of the insulating substrate 10 having the first space portion 15 that houses the integrated circuit element 7 is provided on the side wall 13, and a plurality of writings are provided on the outer side surface of the wall body 13. A control terminal 11 is formed. Further, as shown in FIG. 1, the upper surface of the wall body 13 has a structure in which the crystal resonator 1 in which the crystal resonator element 5 is accommodated is placed and fixed.

図1において水晶振動子1は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料から成る基板2と、基板2と同様のセラミック材料から成る側壁3、42アロイやコバール,リン青銅等の金属から成る蓋体4とから成り、前記基板2の上面に側壁3を取着させ、その上面に蓋体4を載置して固定させることによって水晶振動子1が構成され、側壁3の内側に位置する基板2の上面に水晶振動素子5が実装されている。       In FIG. 1, a crystal resonator 1 includes, for example, a substrate 2 made of a ceramic material such as glass-ceramic and alumina ceramic, and side walls 3 and 42 made of a ceramic material similar to the substrate 2, such as an alloy, Kovar, phosphor bronze, or the like. The crystal resonator 1 is configured by attaching the side wall 3 to the upper surface of the substrate 2 and mounting and fixing the lid 4 on the upper surface of the substrate 2, and is positioned inside the side wall 3. A crystal resonator element 5 is mounted on the upper surface of the substrate 2 to be operated.

前記水晶振動子1は、その内部に、具体的には基板2の上面と側壁3の内面と蓋体4の下面とで囲まれる第2の空間部9内に水晶振動素子5を収容して蓋体4が載置されて気密封止されており、基板2の上面には水晶振動素子5の励振電極6に接続される一対の搭載パッド等が、基板2の下面には後述する絶縁性基体10上の壁体13に接続される複数個の第2の接続電極部17がそれぞれ設けられ、これらのパッドや端子は基板2表面の配線パターンや基板内部に埋設されているビアホール等を介して、対応するもの同士、相互に電気的に接続されている。       The crystal resonator 1 has a crystal resonator element 5 accommodated in a second space 9 surrounded by the upper surface of the substrate 2, specifically, the inner surface of the side wall 3 and the lower surface of the lid body 4. A lid 4 is placed and hermetically sealed, a pair of mounting pads connected to the excitation electrode 6 of the crystal resonator element 5 on the upper surface of the substrate 2, and an insulating property to be described later on the lower surface of the substrate 2. A plurality of second connection electrode portions 17 connected to the wall body 13 on the base 10 are provided, and these pads and terminals are connected via a wiring pattern on the surface of the substrate 2 and via holes embedded in the substrate. The corresponding devices are electrically connected to each other.

一方、水晶振動子1の内部に収容される水晶振動素子5は、所定の結晶軸でカットされた水晶素板の両主面に一対の励振電極6が被着・形成されて成り、外部からの変動電圧が一対の励振電極6を介して水晶素板に印加されると、所定の周波数で厚みすべり振動を起こす。また、励振電極6は高融点金属であるクロム(Cr)層から成る下地主電極層22とAu層からなる上層主電極層23から形成されている。       On the other hand, the crystal resonator element 5 accommodated in the crystal unit 1 is formed by attaching and forming a pair of excitation electrodes 6 on both main surfaces of a crystal base plate cut by a predetermined crystal axis, and from the outside. When the fluctuating voltage is applied to the quartz base plate via the pair of excitation electrodes 6, a thickness shear vibration occurs at a predetermined frequency. The excitation electrode 6 is formed of a base main electrode layer 22 made of a chromium (Cr) layer which is a refractory metal and an upper main electrode layer 23 made of an Au layer.

ここで水晶振動子1の蓋体4を水晶振動子1の第2の接続電極部17や絶縁性基体10の第1の接続電極部18を介して後述するグランド端子用の電極端子19に接続させておけば、その使用時に、金属から成る蓋体4が基準電位に接続されてシールド機能が付与されることと成るため、水晶振動素子5や集積回路素子7を外部からの不要な電気的作用から良好に保護することができる。従って、水晶振動子1の蓋体4は水晶振動子1の第2の接続電極部17や絶縁性基体10の第1の接続電極部18を介してグランド端子用の電極端子19に接続させておくことが好ましい。       Here, the lid 4 of the crystal unit 1 is connected to an electrode terminal 19 for a ground terminal described later via the second connection electrode unit 17 of the crystal unit 1 and the first connection electrode unit 18 of the insulating base 10. If it is allowed to be used, the lid 4 made of metal is connected to the reference potential at the time of use, and a shielding function is given. Good protection from the action. Therefore, the lid 4 of the crystal unit 1 is connected to the electrode terminal 19 for the ground terminal via the second connection electrode unit 17 of the crystal unit 1 and the first connection electrode unit 18 of the insulating substrate 10. It is preferable to keep it.

そして、上述した水晶振動子1が取着される集積回路素子7を収容する第1の空間部15を有する絶縁性基体10は概略矩形状を成しており、ガラス布基材エポキシ樹脂やポリカーボネイト,エポキシ樹脂,ポリイミド樹脂等の樹脂材料やガラス−セラミック,アルミナセラミックス等のセラミック材料等によって平板状を成すように形成されている。       The insulating substrate 10 having the first space 15 for accommodating the integrated circuit element 7 to which the above-described crystal resonator 1 is attached has a substantially rectangular shape, and is made of glass cloth base epoxy resin or polycarbonate. , A resin material such as epoxy resin or polyimide resin, or a ceramic material such as glass-ceramic or alumina ceramic.

前記集積回路素子7を収容する第1の空間部15を有する絶縁性基体10は、基板領域の下面の四隅部に4つの電極端子19(それぞれ電源電圧端子、グランド端子、発振出力端子、発振制御端子)が形成され、上面の四隅部を囲む周縁には壁体13が、また上面の中央域にはフリップチップ型の集積回路素子7が、更に四隅部間の壁体13の外側側面には書込制御端子11が設けられている。       The insulating substrate 10 having the first space 15 for accommodating the integrated circuit element 7 has four electrode terminals 19 (a power supply voltage terminal, a ground terminal, an oscillation output terminal, an oscillation control, respectively) at the four corners on the lower surface of the substrate region. Are formed on the outer periphery of the wall 13 between the four corners, and on the outer side surface of the wall 13 between the four corners. A write control terminal 11 is provided.

前記集積回路素子7を収容する第1の空間部15を有する絶縁性基体10の下面に設けられている4つの電極端子19は、水晶発振器をマザーボード等の実装回路基板に接続するための端子として機能するものであり、水晶発振器を実装回路基板上に搭載する際、実装回路基板の回路配線と半田等の導電性接合材を介して電気的に接続される。       The four electrode terminals 19 provided on the lower surface of the insulating base 10 having the first space portion 15 that accommodates the integrated circuit element 7 serve as terminals for connecting the crystal oscillator to a mounting circuit board such as a mother board. When the crystal oscillator is mounted on the mounting circuit board, it is electrically connected to the circuit wiring of the mounting circuit board via a conductive bonding material such as solder.

また、前記集積回路素子7を収容する第1の空間部15を有する絶縁性基体10の上面に設けられる壁体13で、集積回路素子7を収容する第1の空間部15を有する絶縁性基体10と水晶振動子1との間に、集積回路素子7を配置させるのに必要な所定の間隔を確保しつつ、集積回路素子7を収容する第1の空間部15を有する絶縁性基体10の第1の接続電極部18を水晶振動子1の第2の接続電極部17に半田層12を介して接続する。       In addition, the wall 13 provided on the upper surface of the insulating base 10 having the first space 15 for accommodating the integrated circuit element 7, and the insulating base having the first space 15 for receiving the integrated circuit element 7. The insulating substrate 10 having the first space 15 for accommodating the integrated circuit element 7 while ensuring a predetermined interval necessary for disposing the integrated circuit element 7 between the crystal unit 1 and the crystal unit 1. The first connection electrode portion 18 is connected to the second connection electrode portion 17 of the crystal resonator 1 through the solder layer 12.

更に、上述した集積回路素子7を収容する第1の空間部15を有する絶縁性基体10の中央域には、複数個の電極パッドが設けられており、これら電極パッドに集積回路素子7の接続パッドをAuバンプや半田、または異方性導電接着材等の導電性接合材8を介して電気的、及び機械的に接続させることによって集積回路素子7が第1の空間部15を有する絶縁性基体10上の所定位置に取着される。       Further, a plurality of electrode pads are provided in the central region of the insulating base 10 having the first space 15 for accommodating the integrated circuit element 7 described above, and the connection of the integrated circuit element 7 to these electrode pads. The insulating property in which the integrated circuit element 7 has the first space portion 15 is obtained by electrically and mechanically connecting the pad via a conductive bonding material 8 such as an Au bump, solder, or anisotropic conductive adhesive. It is attached to a predetermined position on the substrate 10.

前記集積回路素子7は、その回路形成面(下面)に、周囲の温度状態を検知するサーミスタといった感温素子、水晶振動素子5の温度特性を補償する温度補償データを格納するメモリ、メモリ内の温度補償データに基づいて水晶振動素子5の振動特性を温度変化に応じて補正する温度補償回路、先の温度補償回路に接続されて所定の発振出力を生成する発振回路等が設けられており、この発振回路で生成された発振出力は、外部に出力された後、例えば、クロック信号等の基準信号として利用される。       The integrated circuit element 7 has, on its circuit forming surface (lower surface), a temperature sensing element such as a thermistor for detecting the ambient temperature state, a memory for storing temperature compensation data for compensating the temperature characteristics of the crystal vibration element 5, A temperature compensation circuit that corrects the vibration characteristics of the crystal resonator element 5 according to a temperature change based on the temperature compensation data, an oscillation circuit that is connected to the previous temperature compensation circuit and generates a predetermined oscillation output, and the like are provided. The oscillation output generated by the oscillation circuit is used as a reference signal such as a clock signal after being output to the outside.

ここで、本発明の特徴部分は図1、図2に示すように、絶縁性基体10の表主面に設けられた第1の空間部15を囲う凹形状をした容器内の絶縁性基体10の表主面上には発振回路が組み込まれた集積回路素子7が搭載されており、絶縁性基体10の第1の空間部15上面に形成された第2の空間部9を囲う同じく凹形状の容器内には集積回路素子7に接続電極部17,18を通じて電気的に接続される水晶振動素子5が収容されており、第1の空間部15を囲う容器と第2の空間部9を囲う容器は接続電極部17,18を介して接合されており、第2の空間部9を囲う容器の開口上縁部に蓋体4が載置され気密封止される水晶発振器において、水晶振動素子5の表裏面に付けられた高融点金属から成る下地主電極層22の両面の膜厚の和数が30Å以上、90Å以下として、下地主電極層22として用いられるクロム(Cr)膜厚を薄くすることでリフロー特性の周波数変動を抑えることが可能となる。このリフロー特性の周波数変動が小さく抑えられる様子は図3のグラフに示されている。ここで図3の縦軸は水晶発振器のリフローによる周波数変化率ΔF(ppm)、横軸は下地主電極22に用いられるクロム膜の水晶振動素子5の両面の膜厚の和数(Å)である。図3よりクロム(Cr)の膜厚の和数が90Å以下であるとリフロー加熱(ピーク温度:約240℃〜260℃)による周波数変化率がー0.5ppm以下で安定しているのがわかる。今回の実験においては放電パワーを0.21KWに固定し搬送速度を変更することで成膜されるCr膜厚の制御を行っている。尚、従来においては下地主電極層の膜厚の和数を150Å(搬送速度3000〜5000pps)程度としており、リフロー加熱での周波数変化率がー1.5ppm程度と大きく、GPS対応等の高精度が要求される水晶発振器には好ましくないおそれがあった。また、上層主電極層23については、膜厚3500〜4000Å程度のAu層が上層主電極層23として形成されている。       Here, as shown in FIGS. 1 and 2, the characteristic part of the present invention is that the insulating substrate 10 in a concave container surrounding the first space 15 provided on the front main surface of the insulating substrate 10. An integrated circuit element 7 in which an oscillation circuit is incorporated is mounted on the front main surface of the same, and also has a concave shape surrounding the second space portion 9 formed on the upper surface of the first space portion 15 of the insulating substrate 10. The crystal resonator element 5 electrically connected to the integrated circuit element 7 through the connection electrode portions 17 and 18 is accommodated in the container, and the container surrounding the first space portion 15 and the second space portion 9 are accommodated. In the crystal oscillator in which the enclosing container is joined via the connection electrode portions 17 and 18 and the lid 4 is placed on the upper edge of the opening surrounding the second space 9 and hermetically sealed, Sum of film thicknesses on both sides of base main electrode layer 22 made of a refractory metal attached to the front and back surfaces of element 5 30Å or more, as the following 90 Å, it is possible to suppress the frequency variation of the reflow characteristics at reducing the chromium (Cr) film thickness used as a base main electrode layer 22. The graph of FIG. 3 shows how the frequency fluctuation of the reflow characteristic is suppressed to a small level. Here, the vertical axis of FIG. 3 is the frequency change rate ΔF (ppm) due to reflow of the crystal oscillator, and the horizontal axis is the sum (Å) of the film thicknesses of both surfaces of the chrome-film crystal resonator element 5 used for the base main electrode 22. is there. FIG. 3 shows that when the sum of the film thicknesses of chromium (Cr) is 90 mm or less, the frequency change rate by reflow heating (peak temperature: about 240 ° C. to 260 ° C.) is stable at −0.5 ppm or less. . In this experiment, the Cr film thickness is controlled by fixing the discharge power to 0.21 kW and changing the transport speed. Conventionally, the sum of the film thickness of the base main electrode layer is about 150 mm (conveying speed 3000 to 5000 pps), the frequency change rate in reflow heating is as large as about -1.5 ppm, and it is highly accurate such as for GPS. There is a possibility that it is not preferable for a crystal oscillator that requires the As for the upper main electrode layer 23, an Au layer having a thickness of about 3500 to 4000 mm is formed as the upper main electrode layer 23.

なお、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。       In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

例えば、上述の実施形態においては、図1に示すように下地主電極層22にクロム(Cr)を用いているが、これに代えて水晶素板と馴染みの良いニッケル(Ni)、チタン(Ti)、ニクロム、アルミニウム(Al)、銀(Ag)等の金属材料を用いて下地主電極層を形成しても全く構わず、この場合においても本発明の技術的範囲に含まれることは言うまでも無い。       For example, in the above-described embodiment, chromium (Cr) is used for the base main electrode layer 22 as shown in FIG. 1, but instead of this, nickel (Ni), titanium (Ti ), Nichrome, aluminum (Al), silver (Ag), or other metal material may be used to form the underlying main electrode layer, and this case is also included in the technical scope of the present invention. There is no.

本発明の実施形態にかかる水晶発振器の側面方向からみた概略の断面図である。なお、図1の下方の図は上方の図の一部(21)を拡大した図である。1 is a schematic cross-sectional view of a crystal oscillator according to an embodiment of the present invention as viewed from the side. In addition, the lower figure of FIG. 1 is the figure which expanded a part (21) of the upper figure. 本発明の実施形態にかかる水晶発振器の、水晶振動子の部分である第2の空間部を上方から見た概略の上面図である。It is the schematic top view which looked at the 2nd space part which is the part of a crystal oscillator of the crystal oscillator concerning embodiment of this invention from upper direction. 本発明の実施形態にかかる水晶発振器の、リフロー周波数変化率(縦軸)と下地主電極層と成るCr膜厚(横軸)の関係を示すグラフである。It is a graph which shows the relationship between the reflow frequency change rate (vertical axis), and the Cr film thickness (horizontal axis) used as a base main electrode layer of the crystal oscillator concerning embodiment of this invention. 従来の水晶振動素子が内部に搭載された、水晶発振器の水晶振動子部分を水平方向からみた概略の側面断面図である。It is the rough side surface sectional view which looked at the crystal oscillator part of the crystal oscillator from which the conventional crystal oscillation element was carried in the horizontal direction.

符号の説明Explanation of symbols

1 ・・・水晶振動子
2 ・・・基板
3 ・・・側壁
4 ・・・蓋体
5 ・・・水晶振動素子
6 ・・・励振電極
7 ・・・集積回路素子
8 ・・・導電性接合材
9 ・・・第2の空間部
10・・・絶縁性基体
11・・・書込制御端子
12・・・半田層
13・・・壁体
15・・・第1の空間部
17・・・第2の接続電極部
18・・・第1の接続電極部
19・・・電極端子
21・・・導電性接合材
22・・・下地主電極層
23・・・上層主電極層
24・・・支持部
DESCRIPTION OF SYMBOLS 1 ... Crystal oscillator 2 ... Board | substrate 3 ... Side wall 4 ... Cover body 5 ... Quartz vibration element 6 ... Excitation electrode 7 ... Integrated circuit element 8 ... Conductive joining Material 9 ... second space 10 ... insulating base 11 ... write control terminal 12 ... solder layer 13 ... wall 15 ... first space 17 ... 2nd connection electrode part 18 ... 1st connection electrode part 19 ... Electrode terminal 21 ... Conductive bonding material 22 ... Underlayer main electrode layer 23 ... Upper layer main electrode layer 24 ... Supporting part

Claims (2)

絶縁性基体の表主面に設けられた第1の空間部を囲う凹形状をした容器内の該絶縁性基体の表主面上には発振回路が組み込まれた集積回路素子が搭載されており、該絶縁性基体の該第1の空間部上面に形成された第2の空間部を囲う同じく凹形状の容器内には該集積回路素子に接続電極部を通じて電気的に接続される水晶振動素子が収容されており、該第1の空間部を囲う該容器と該第2の空間部を囲う該容器は該接続電極部を介して接合されており、該第2の空間部を囲う該容器の開口上縁部に蓋体が載置され気密封止される水晶発振器において、

該水晶振動素子の表裏面に付けられた高融点金属から成る下地主電極層の両面の膜厚の和数が30Å以上、90Å以下であることを特徴とする水晶発振器。
An integrated circuit element in which an oscillation circuit is incorporated is mounted on the front main surface of the insulating base in a concave container surrounding the first space provided on the front main surface of the insulating base. A quartz crystal resonator element electrically connected to the integrated circuit element through a connection electrode portion in a concave container surrounding the second space portion formed on the upper surface of the first space portion of the insulating substrate. The container enclosing the first space part and the container enclosing the second space part are joined via the connection electrode part, and the container enclosing the second space part In a crystal oscillator in which a lid is placed on the upper edge of the opening and hermetically sealed,

A crystal oscillator characterized in that the sum of the film thicknesses of both surfaces of a base main electrode layer made of a refractory metal attached to the front and back surfaces of the crystal resonator element is 30 mm or more and 90 mm or less.
該下地主電極層がクロム(Cr)から形成されていることを特徴とする請求項1に記載の水晶発振器。       2. The crystal oscillator according to claim 1, wherein the base main electrode layer is made of chromium (Cr).
JP2006294919A 2006-10-30 2006-10-30 Crystal oscillator Pending JP2008113234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006294919A JP2008113234A (en) 2006-10-30 2006-10-30 Crystal oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006294919A JP2008113234A (en) 2006-10-30 2006-10-30 Crystal oscillator

Publications (1)

Publication Number Publication Date
JP2008113234A true JP2008113234A (en) 2008-05-15

Family

ID=39445504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006294919A Pending JP2008113234A (en) 2006-10-30 2006-10-30 Crystal oscillator

Country Status (1)

Country Link
JP (1) JP2008113234A (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151283A (en) * 1998-08-31 2000-05-30 Kyocera Corp Surface mounting type crystal oscillator
JP2001007677A (en) * 1999-06-24 2001-01-12 Toyo Commun Equip Co Ltd Crystal vibrator
JP2001274649A (en) * 2000-03-24 2001-10-05 Daishinku Corp Method for air-tightly sealing quartz vibration device
JP2003060481A (en) * 2001-08-16 2003-02-28 Citizen Watch Co Ltd Piezoelectric oscillation element and manufacturing method therefor, and piezoelectric device
JP2003087088A (en) * 2001-09-07 2003-03-20 Citizen Watch Co Ltd Piezoelectric device and manufacturing method therefor
JP2003224442A (en) * 2002-01-29 2003-08-08 Kyocera Corp Crystal device and production method for the device
JP2005136575A (en) * 2003-10-29 2005-05-26 Seiko Epson Corp Piezoelectric vibrating piece, structure of excitation electrode thereof, electrode forming method, piezoelectric device, cellular telephone device employing piezoelectric device and electronic equipment employing piezoelectric device
JP2005237041A (en) * 2000-03-03 2005-09-02 Daishinku Corp Crystal oscillation device
JP2006060798A (en) * 2004-07-22 2006-03-02 Daishinku Corp Quartz crystal oscillating plate and quartz crystal oscillator
JP2006129303A (en) * 2004-10-29 2006-05-18 Kyocera Kinseki Corp Manufacturing method of piezoelectric oscillator

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151283A (en) * 1998-08-31 2000-05-30 Kyocera Corp Surface mounting type crystal oscillator
JP2001007677A (en) * 1999-06-24 2001-01-12 Toyo Commun Equip Co Ltd Crystal vibrator
JP2005237041A (en) * 2000-03-03 2005-09-02 Daishinku Corp Crystal oscillation device
JP2001274649A (en) * 2000-03-24 2001-10-05 Daishinku Corp Method for air-tightly sealing quartz vibration device
JP2003060481A (en) * 2001-08-16 2003-02-28 Citizen Watch Co Ltd Piezoelectric oscillation element and manufacturing method therefor, and piezoelectric device
JP2003087088A (en) * 2001-09-07 2003-03-20 Citizen Watch Co Ltd Piezoelectric device and manufacturing method therefor
JP2003224442A (en) * 2002-01-29 2003-08-08 Kyocera Corp Crystal device and production method for the device
JP2005136575A (en) * 2003-10-29 2005-05-26 Seiko Epson Corp Piezoelectric vibrating piece, structure of excitation electrode thereof, electrode forming method, piezoelectric device, cellular telephone device employing piezoelectric device and electronic equipment employing piezoelectric device
JP2006060798A (en) * 2004-07-22 2006-03-02 Daishinku Corp Quartz crystal oscillating plate and quartz crystal oscillator
JP2006129303A (en) * 2004-10-29 2006-05-18 Kyocera Kinseki Corp Manufacturing method of piezoelectric oscillator

Similar Documents

Publication Publication Date Title
JP2006279872A (en) Piezoelectric vibrator, manufacturing method therefor, and manufacturing method of piezoelectric oscillator using the piezoelectric vibrator
JP6599694B2 (en) Piezoelectric device
JP2010035078A (en) Piezoelectric oscillator
JP4890914B2 (en) Support structure of quartz crystal resonator element
JP2008263564A (en) Temperature-compensated piezoelectric oscillator
JP4724518B2 (en) Piezoelectric oscillator
JP2007067778A (en) Piezoelectric device
JP2007324933A (en) Piezoelectric oscillator and its manufacturing method
JP5123139B2 (en) Piezoelectric device
JP2007181130A (en) Piezoelectric device and method of manufacturing the same
JP2007235289A (en) Piezoelectric oscillator
JP4817929B2 (en) Support structure of quartz crystal resonator element
JP2008252799A (en) Piezoelectric device
JP2008113234A (en) Crystal oscillator
JP2007180700A (en) Piezoelectric device
JP2007103994A (en) Piezoelectric oscillator
JP2004356912A (en) Surface mount type piezoelectric oscillator
JP5337635B2 (en) Electronic devices
JP5451266B2 (en) Electronic devices
JP2008301297A (en) Crystal device
JP4986529B2 (en) Crystal oscillator
JP4376148B2 (en) Piezoelectric oscillator
JP2007103995A (en) Piezoelectric device
JP2008035175A (en) Piezoelectric oscillator
JP2008061043A (en) Crystal oscillator and its manufacturing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091022

A131 Notification of reasons for refusal

Effective date: 20120327

Free format text: JAPANESE INTERMEDIATE CODE: A131

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120528

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120717