JP2008111182A - Molding for dielectric component and production method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a molding for a dielectric component which has excellent moldability and strength, exhibits good dielectricity and can be used in high frequency band. <P>SOLUTION: A surface of a base material made of a thermoplastic resin containing glass fibers is subjected to a high frequency excited plasma treatment at a reduced pressure in an oxygen-containing atmosphere, and an electroconductive film and a dielectric film are deposited successively on the surface of the base material by a high frequency ion plating method. The high frequency excited plasma treatment is preferably performed in an atmosphere of a mixed plasma comprising oxygen plasma and argon plasma. The deposition of the lower layer of the electroconductive film is preferably performed in an atmosphere of a mixed plasma comprising oxygen plasma and argon plasma, and the deposition of the upper layer of the electroconductive film is preferably performed in an argon plasma atmosphere. The deposition of the dielectric film is preferably performed in an atmosphere of a mixed plasma comprising oxygen plasma and argon plasma. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a molded part for dielectric parts used for dielectric parts such as capacitors and antennas for mobile phones and the like, and a method for manufacturing the same.

  In electrical / electronic devices such as mobile phones that transmit and receive radio waves, small dielectric parts such as capacitors and antennas are used. In recent years, in these devices, it has been desired to increase the frequency and reduce the size, and the dielectric parts are also required to be further reduced in size.

  Conventionally, dielectric parts obtained by sintering ceramics (for example, ceramic capacitors) are used as these dielectric parts. However, since ceramics have low formability, there is a problem that they are not suitable for dielectric parts having complicated shapes. Moreover, since the sintering temperature of 1200-1400 degreeC is normally requested | required, there exists a problem that productivity is also low.

  On the other hand, a synthetic resin can be cited as a dielectric material having good moldability (for example, a plastic film capacitor). However, when the synthetic resin material is used as a dielectric part of a cellular phone capacitor or an antenna, the relative dielectric constant is low. There is a problem of too much.

  For this reason, it is conceivable to combine ceramic and synthetic resin dielectrics as the dielectric, but the heat resistance of the synthetic resin is too low, and the material containing the synthetic resin cannot be heat-treated by heating to the ceramic sintering temperature. There is.

  For example, Patent Document 1 (Japanese Patent Laid-Open No. 10-247817) describes a method for manufacturing a dielectric resin antenna in which a conductor layer is provided on the surface of a base material made of a dielectric resin. As the dielectric resin, engineering plastics such as thermoplastic aromatic polyester, polyphenylene sulfide (PPS) resin, and syndiotactic polystyrene resin are used, and it is also disclosed that fiber or particulate dielectric ceramics are blended. ing. However, the relative permittivity of these synthetic resins themselves is 10 or less, and there is a problem that the relative permittivity is low and the use as a dielectric is limited. In addition, when dielectric ceramics are blended, there is a problem that the number of steps for mixing the synthetic resin and the dielectric ceramics increases, and the moldability is lowered and a good molded body cannot be obtained. In this technique, a dielectric is obtained by placing a conductor in a cavity of a mold and injecting and curing a dielectric resin in the cavity.

  Patent Document 2 (Japanese Patent Laid-Open No. 2000-114857) describes that a patch electrode of a metal plate is attached to a dielectric material made of general-purpose resin, and an electrode position is arbitrarily determined to form an antenna circuit. However, this method requires a metal plate to be attached to a base material made of a dielectric resin, and the process becomes complicated.

  Patent Document 3 (Japanese Patent Laid-Open No. 2005-094068) describes a composite material having a dielectric constant of 15 or higher in a frequency range of 100 MHz or higher by mixing a synthetic resin having good moldability and a dielectric ceramic powder. A structured resin-type dielectric antenna is described. However, there is a problem that the number of steps of mixing the synthetic resin and the dielectric ceramic powder is increased, the moldability is lowered, it is difficult to obtain a good molded body, and the cost is increased.

Patent Document 4 (Japanese Patent Application Laid-Open No. 2006-100258) discloses a dielectric resin composition having excellent fluidity and good injection molding by mixing an inorganic filler such as SrTiO ₃ and a synthetic resin such as PPS resin. Are listed. However, there is a problem that the number of steps for mixing the inorganic filler and the synthetic resin increases, and costs increase.

Patent Document 5 (Japanese Patent Application Laid-Open No. 2006-123232) describes a method of manufacturing a printed wiring board including a dielectric filler-containing semi-cured resin film and a conductive layer, thereby obtaining a capacitor circuit. However, since the dielectric filler-containing semi-cured resin film forms a laminated structure of the filler-containing semi-cured resin layer and the high fluidity resin film, there is a problem that the use of the dielectric part is limited.
Japanese Patent Laid-Open No. 10-247817 Japanese Unexamined Patent Publication No. 2000-1114857 Japanese Patent Laying-Open No. 2005-094068 JP 2006-1000025 A JP 2006-123232 A

  An object of the present invention is to provide a molded part for a dielectric component that has excellent moldability and strength, exhibits good dielectric properties, and can be used in a high frequency band.

  In the method for producing a molded body for a dielectric component according to the present invention, the surface of a substrate made of a thermoplastic resin or a thermoplastic resin containing glass fiber is subjected to high-frequency excitation plasma treatment by reducing the pressure of an atmosphere containing oxygen. Thereafter, a conductive film is formed on the surface of the substrate by a vacuum film forming method, and a dielectric film is formed on the conductive film.

  As the base material, for example, a polyamide resin or a polyphenylene sulfide resin containing glass fibers can be used.

  The high-frequency excitation plasma treatment is preferably performed in an oxygen plasma atmosphere or a mixed plasma atmosphere of argon plasma and oxygen plasma.

  The conductive film is preferably formed by an ion plating method in an argon plasma and oxygen plasma mixed atmosphere and then in an argon plasma atmosphere.

  Accordingly, it is preferable that the lower layer of the conductive film is formed of oxidized copper, and the upper layer of the conductive film is formed of unoxidized copper.

As the dielectric film, an SiO ₂ film, a TiO ₂ film, or a BaTiO ₃ film is preferably formed.

  The dielectric film is preferably formed by an ion plating method in a mixed atmosphere of argon plasma and oxygen plasma.

  It is preferable to heat-treat the molded body at a temperature of 80 ° C. or higher after the dielectric film is formed.

  By the above method, a molded body for a dielectric component is obtained which includes a base material made of a thermoplastic resin containing thermoplastic resin or glass fiber, and a conductive film and a dielectric film formed on the base material.

  The thickness of the conductive film is preferably 0.5 to 10 μm.

  The thickness of the dielectric film is preferably 0.5 to 2.0 μm.

  According to the present invention, it is possible to form a molded part for dielectric parts that has excellent moldability and strength, exhibits good dielectric properties, and can be used in a high-frequency band at low temperature, and is low in cost and productivity. The effect that it is excellent is acquired. Such a molded body for dielectric parts can suitably meet the demand for higher frequency and smaller size in dielectric parts such as capacitors and antennas for mobile phones and the like.

  As a result of intensive studies to solve the above-mentioned problems, the present inventors have determined that oxygen is applied to the surface of a base material made of a thermoplastic resin or a thermoplastic resin containing glass fibers. A high-frequency excitation plasma treatment is performed by reducing the pressure of the atmosphere, and then a conductive film is formed on the surface of the substrate by a vacuum film formation method, and a dielectric film is formed on the conductive film As a result, it has been found that a molded product for dielectric parts can be provided that can be suitably used for capacitors and antennas of cellular phones and the like that are required to have higher frequencies and smaller sizes.

  As the base material, a thermoplastic resin, for example, a polyamide resin or polyphenylene sulfide (PPS) resin containing glass fiber is widely used as a substitute for a metal material because of its high mechanical strength and high heat resistance temperature. ing.

  By forming a conductive film and a dielectric film on these base materials, a dielectric ceramic material is blended with a dielectric resin material, or a process of attaching a metal plate to the dielectric resin, A molded body for a dielectric component having a conductor layer and a dielectric layer and having good moldability can be obtained simply and at low cost.

  However, in order to form a conductive film and a dielectric film on the surface of a base material containing glass fibers in a polyamide resin or PPS resin, it is necessary to apply a primer coat or the like because there are almost no functional groups on the surface. is there. Application of such a primer coat complicates the process and attaches dust to the substrate. In addition, if a primer coat is present between the substrate and the conductive film, the heat resistance is poor and the film thickness is not constant. Furthermore, since the relative dielectric constant of the primer is low, desired characteristics cannot be obtained.

  In order to eliminate these disadvantages, in the present invention, the surface of the substrate is subjected to the excitation plasma treatment in an oxygen atmosphere or a mixed gas atmosphere of oxygen and argon. Excited oxygen and argon, or the ion bombardment effect by ionized and accelerated oxygen ions and argon ions, the mold oil and sliding oil adhering to the surface of the substrate are washed, Additives contained in the substrate are also easily removed and evaporated, and the surface of the substrate is roughened. Therefore, it is not necessary to previously perform cleaning with a chlorofluorocarbon or alcohol-based solvent on the base material as in the past.

  In addition, the presence of ions accelerated at a high speed activates the surface of the base material, and the presence of oxygen ions generates oxygen functional groups on the surface of the base material, thereby forming a conductive film and metal. Reaction occurs with oxygen on the surface of the material. Thereby, strong adhesive force arises between a base material and a conductive film. Therefore, unlike the prior art, it is not necessary to form a primer coat layer on the surface of the substrate, which has been performed before vacuum film formation.

  Thus, the adhesion strength between the base material and the conductive film is sufficient by the surface bombardment effect, the cleaning effect, and the activated deposition action by the excited ion species by the excitation plasma treatment. Further, strong adhesion can be obtained between the conductive film and the dielectric film via oxygen.

  Note that the excitation plasma treatment is preferably a high-frequency excitation plasma treatment performed in an oxygen plasma atmosphere or a mixed plasma atmosphere of argon plasma and oxygen plasma.

  In the high-frequency excitation plasma treatment, a higher-density plasma is obtained by radiating high-frequency radio waves into the chamber using a DC plasma or an antenna using a planar electrode. Since the obtained high frequency plasma has high energy, a higher effect can be obtained. In the radio wave method, a frequency of 13.5 MHz is assigned to a vacuum device or a sputtering device.

  When a high frequency (13.5 MHz) is used, the high frequency excitation plasma treatment is desirably performed for 3 minutes or more with a high frequency output of 1.0 kW or more. If the high frequency output is less than 1.0 kW, the substrate is not sufficiently cleaned, which is not preferable. If it exceeds 2.0 kW, a large and expensive device is required for the power source, and the output will be increased more than necessary, so it is preferable to set the high-frequency output to 2.0 kW or less.

  If the treatment time is less than 3 minutes, the substrate cleaning and surface activation effects are insufficient, and the adhesion strength between the substrate and the conductive film may be lowered. In addition, even if it exceeds 5 minutes, since these effects do not change, the processing time is preferably 5 minutes or less from the viewpoint of cost.

  The present invention is characterized in that an oxygen functional group is imparted to the surface of a substrate by performing high-frequency excitation plasma treatment in the presence of oxygen gas, which is a reaction gas. The gas may be oxygen gas alone. The treatment with oxygen gas alone has the advantage of reducing the gas flow rate because more functional groups are generated. However, oxygen gas is more expensive than argon gas, and argon gas is a heavier gas than oxygen. In addition, since the etching effect of the substrate is high, the efficiency can be increased by using a mixed gas of oxygen and argon. If too much oxygen gas is added, it reacts with dirt and the like to oxidize and carbonize the dirt and the like. Therefore, in mass production, it is desirable to suppress the amount of oxygen gas used in consideration of cost.

  From the above, when a mixed gas is used, the ratio of argon gas in the mixed gas of oxygen and argon is preferably 80% or less by volume. That is, when the conductive film reacts with oxygen, there is an effect that a strong adhesive force can be obtained between the substrate and the conductive film. In order to obtain such an effect, the amount of oxygen gas Is preferably adjusted to be 20% or more by volume ratio. If the amount of argon gas is large, the power to clean the substrate becomes strong, but if the amount of oxygen gas is less than 20% by volume, activation of the surface of the substrate becomes insufficient, and oxygen functional groups The amount is also insufficient, and there is a possibility that good adhesion cannot be obtained.

  In the high-frequency excitation plasma treatment, the gas flow rate is preferably 150 to 260 cc / min in the case of only oxygen gas, and is preferably 150 to 400 cc / min in the case of a mixed gas. However, also in the mixed gas, the oxygen gas flow rate is set to 260 cc / min or less. When the gas flow rate is less than 150 cc / min, the amount of ions generated is small, and there is a possibility that the surface of the substrate is not sufficiently cleaned and activated. On the other hand, if the gas flow rate of oxygen gas exceeds 260 cc / min, the surface of the substrate is excessively activated, and the conductive film formed thereafter is oxidized more than necessary, leading to a decrease in resistance value. This is not preferable. Furthermore, if the gas flow rate of the mixed gas exceeds 400 cc / min, the degree of vacuum deteriorates, which is not preferable.

  After the cleaning of the surface of the substrate and the step of imparting a functional group to the surface are completed, a step of forming a lower layer of the conductive film is performed. It is preferable to use copper for the conductive film because of its low specific resistance and low cost. In addition to copper, silver, nickel, or the like can also be used. Also in the step of forming the lower layer of the conductive film, the lower layer of the conductive film is formed in an oxygen atmosphere or a mixed gas atmosphere of oxygen and argon as in the step of cleaning the surface of the substrate. Furthermore, it is desirable from the viewpoint of mass production that the gas flow rate and the gas mixing ratio are the same as those in the pretreatment step.

  In the film forming step of the lower layer of the conductive film, the gas flow rate is preferably 150 to 260 cc / min when only oxygen gas is used, and 150 to 400 cc / min when mixed gas is used. However, even in the mixed gas, the amount of oxygen gas is set to 260 cc / min or less. When the gas flow rate is less than 150 cc / min, the amount of ions to be generated is small, and activation of the lower layer of the base material and the conductive film may be insufficient. On the other hand, if the gas flow rate of oxygen gas exceeds 260 cc / min, the lower layer of the conductive film is excessively activated, copper is oxidized more than necessary, and the resistance value is lowered. Furthermore, oxygen ions may react with the lower layer of the deposited conductive film, and the resulting conductive film may become black. Moreover, since the degree of vacuum will deteriorate when the gas flow rate of mixed gas exceeds 400 cc / min, it is not preferable. Further, an increase in oxygen gas is not preferable because it reacts with dirt in the chamber, carbonizes the dirt, and generates gas.

  Thereafter, a process of forming an upper layer of the conductive film is performed. The upper layer of the conductive film is preferably formed in an argon atmosphere. The lower layer of the conductive film formed in an atmosphere containing oxygen gas is bonded to oxygen on the surface of the base material to provide strong adhesion between the conductive film and the base material, while being formed in an argon atmosphere. Since the upper layer of the formed conductive film is not oxidized, a resistance value similar to that of pure copper can be obtained.

  Therefore, the thickness of the lower layer of the conductive film is suppressed to 15 to 60% with respect to the entire conductive film. If the film thickness of the lower layer of the conductive film is less than 15% with respect to the entire conductive film, sufficient adhesion to the substrate cannot be obtained, and if it exceeds 60%, a desired resistance value is obtained. The film formation time required for this is extended.

  Moreover, in order to sufficiently reduce the specific resistance, it is necessary to increase the overall thickness of the conductive film. However, if the film thickness is increased too much, the film stress increases and causes the peeling of the conductive film. Therefore, it is not preferable. The thickness of the conductive film to be formed is desirably 0.5 to 10 μm, and more desirably 0.5 to 2 μm. If the total thickness of the conductive film is less than 0.5 μm, the original structure of the film becomes rough, the corrosion resistance is remarkably lowered, and sufficient characteristics cannot be obtained. When the total thickness of the conductive film exceeds 2.0 μm, the film stress becomes strong and the adhesion with the base material and the adhesion with the dielectric film are reduced, although the conductivity is hardly changed. In addition, the possibility of spontaneous peeling after film formation increases. On the other hand, if it is thicker than necessary, it takes time to form a film and the productivity is lowered.

  Note that, in any of the high-frequency excitation plasma treatment and the conductive film formation, the purity is desirably 99.9% or more from the viewpoint of preventing the impurity gas from being mixed as the oxygen gas or the argon gas.

After completing the formation of the conductive film, a dielectric film is formed on the conductive film. The material of the dielectric film is SiO ₂ (relative permittivity: 3.8), TiO ₂ (relative permittivity: 114), or BaTiO ₃ (relative permittivity: 800). These ceramics are preferable because they are easy to evaporate and the film forming speed is high. Further, the purity of the material is preferably 99% or more so that impurities are not mixed. Moreover, as a particle | grain size, the magnitude | size of 1-5 mm is desirable from easiness to evaporate and a filling property.

  The thickness of the dielectric film is desirably 0.5 to 2.0 μm. If the thickness of the dielectric film is less than 0.5 μm, pinholes may be generated in the dielectric film. In particular, attention must be paid to the standing surface of the product because the dielectric film becomes thin and unattached portions are likely to occur. When the film thickness of the dielectric film is larger than 2 μm, it takes a long time to form the film, the film stress increases, and the dielectric film is easily cracked.

  When forming the dielectric film, it is desirable to form the film in an oxygen gas atmosphere or a mixed gas atmosphere of oxygen and argon. The presence of oxygen gas oxidizes the dielectric film, improving the crystallinity and increasing the transmittance.

  It is also possible to form an electrode made of copper of any shape by forming a dielectric film and then covering with a SUS metal mask by a known electrode forming method. Alternatively, after forming a dielectric film, a silver paste or the like can be applied to manufacture an electrode. Furthermore, you may form protective films, such as a metal, an inorganic substance, or a polymer, as needed.

  Furthermore, the effect obtained can be increased by using a thermoplastic resin, particularly an engineering plastic, as the base material of the present invention. Engineering plastics include polyamide, polyacetal, syndiotactic polystyrene, polycarbonate, polyphenylene sulfide, fluororesin, polyetheretherketone, liquid crystal polymer, polyethernitrile, polysulfone, polyethersulfone, polyarylate, polyamideimide, Examples include polyetherimide or polyimide. These are hardly adhesive materials because they contain almost no surface functional groups, but they are used as a base material, and oxygen functional groups are introduced into the surface of the base material by the manufacturing method of the present invention. Adhesiveness between the substrate and the conductive film in the molded article can be improved. In addition, this invention can be applied suitably also to these base materials containing glass fiber.

  The base material is formed by injection molding, extrusion molding or cast molding of various plastics, and the present invention can be used with any base material obtained by any molding method.

  As a method for forming the conductive film and the dielectric film, the conductive film and the dielectric film can be uniformly formed, and the conductive film and the dielectric film having excellent environmental resistance can be obtained. It is preferable to carry out by a vacuum film forming method. Copper used as the material of the conductive film can be evaporated by means such as resistance heating, induction heating, electron beam irradiation, or holo cathode discharge. Further, the material of the dielectric film is not particularly limited as long as it is a material that is evaporated by an oxide.

  Excited plasma treatment in which the evaporated particles are excited, ionized, and deposited on the surface of the plastic molded product can be appropriately performed in consideration of conventional known techniques. In addition, although low frequency excitation plasma processing can also be used, it is preferable from a viewpoint of an effect to use high frequency excitation plasma processing.

  As the vacuum film formation method, a sputtering method can be used, but an ion plating method in which a high melting point target is dissolved with an electron gun, a metal is evaporated, and a film is formed on a substrate is preferable. The ion plating method can form a film over a wide area at a high film formation rate. Film formation can be performed by either a batch method or a continuous method.

  Further, in the practice of the present invention, by using a high-frequency ion plating apparatus, the same chamber can be continuously used from pre-cleaning and functional group application by high-frequency excitation plasma processing to film-forming processing of conductive films and dielectric films. Can be done. On the other hand, use of a normal vapor deposition device is not preferable because high-frequency plasma is not generated, and the film is simply formed on the substrate by resistance overheating, so that the reaction is weak and the adhesion is low.

  Furthermore, in order to reduce film defects after film formation, it is desirable to perform heat treatment (annealing) near the heat deformation temperature of the substrate.

(Example 1)
It consists of Reny (registered trademark) (2051DS, manufactured by Mitsubishi Engineering Plastics Co., Ltd.) containing 50% by mass of polyamide resin and glass fiber. Attaching to a gas pumping device (AAIH-W36200SBT, manufactured by Shinko Seiki Co., Ltd.), after evacuating to 1 × 10 ⁻² Pa, first, oxygen gas and argon gas are each supplied at 150 cc / min for a total gas flow of 300 cc / min. In a mixed gas atmosphere obtained by applying a high frequency output of 1 kW, a high frequency excitation plasma treatment of 13.5 MHz was performed for 5 minutes in the obtained mixed gas atmosphere, and the substrate was washed with activated ions and activated.

  Next, oxygen gas and argon gas were each introduced at 150 cc / min so that the total gas flow rate was 300 cc / min, and an oxidized copper film having a thickness of 0.3 μm was formed. Subsequently, only argon gas was introduced at a gas flow rate of 300 cc / min to form a copper film having a thickness of 0.9 μm. Therefore, the obtained conductive film is made of oxidized copper in the lower layer and unoxidized copper in the upper layer, and the film thickness is 1.2 μm.

Thereafter, oxygen gas and argon gas were introduced as dielectric films at 150 cc / min at a total gas flow rate of 300 cc / min. BaTiO ₃ (manufactured by Kojundo Chemical Laboratory Co., Ltd., purity 99% or more, particle size : 2 mm), the current value was gradually increased from 200 mA to 2 minutes, and then a film was formed at 500 mA for 1 minute to obtain a film thickness of 0.5 μm.

  Thereafter, annealing was performed in a dryer at 100 ° C. for 1 hour.

  The molded parts for dielectric parts obtained as described above were evaluated as follows.

[Initial adhesion confirmation test]
An initial adhesion confirmation test was performed by a cross-cut tape test. Specifically, a 2 × 2 mm cut was made from above the dielectric film, and cellophane tape (manufactured by Nichiban, CT405AP-15) was attached to 100 squares. Then, when the cellophane tape was peeled off, the adhesion between the base material and the conductive film was evaluated by examining whether or not peeling occurred from the base material.

  For Example 1, no peeling occurred in 100 squares.

[Moisture resistance test]
The influence of humidity on the adhesion between the substrate and the conductive film and the adhesion between the conductive film and the dielectric film was investigated. Specifically, after being held in an environment of temperature 60 ° C. and humidity 95% for either 240 hours or 600 hours, the appearance change was observed and the aforementioned cross-cut tape test was performed.

  As for Example 1, the appearance did not change in both cases of 240 hours and 600 hours, and no peeling occurred in 100 squares as a result of the cross-cut tape test.

[Heat resistance test]
The effect of temperature on the adhesion between the substrate and the conductive film and the adhesion between the conductive film and the dielectric film was investigated. Specifically, after maintaining for 240 hours in an environment of a temperature of 85 ° C. and a humidity of 90%, the appearance change was observed, and the aforementioned cross-cut tape test was performed.

  About Example 1, there was no change in an external appearance, and even as a result of the cross cut tape test, no peeling occurred in 100 squares.

[Measurement of sheet resistance]
The sheet resistance of the dielectric film was measured using a surface resistivity meter (Loresta MP WCP-T350, manufactured by Mitsubishi Chemical Corporation).

The dielectric film of Example 1 exhibited a resistance value of 10 ⁶ Ω · cm or more, was not measurable, and was confirmed to be an insulator.

[Measurement of relative permittivity]
It measured using the interface for dielectric constant measurement (The British company Solartron company make, 1296 type). The measurement frequency was 1 MHz.

  The relative dielectric constant of the base material of Example 1 was 37 (1 MHz), but after forming the dielectric film, the relative dielectric constant was 107 (1 MHz).

(Example 2)
Made of Reny (registered trademark) (Mitsubishi Engineering Plastics Co., Ltd., 2051H) containing 50% by mass of polyamide resin and glass fiber, and using a base material of 50 × 50 mm in size and 2 mm in thickness The dielectric film was formed in the same manner as in Example 1 except that SiO ₂ (manufactured by Kojundo Chemical Laboratory Co., Ltd., purity 99% or more, particle size: 2 mm) was used for forming the dielectric film. A molded body was obtained.

  The obtained molded parts for dielectric parts were evaluated in the same manner as in Example 1.

  In Example 2, the relative dielectric constant after forming the dielectric film was 56 (1 MHz). Other measurement results were the same as in Example 1.

(Example 3)
After forming the dielectric film in the same manner as in Example 1, it was once opened to the atmosphere, and the obtained dielectric film was covered with a SUS metal mask having a shape in which an electrode was formed, and again vacuumed. Then, only argon gas was introduced at a gas flow rate of 300 cc / min and a copper film was formed to a thickness of 1.0 μm to form an electrode, and it was confirmed that a desired dielectric part was obtained.

Example 4
Molding for dielectric parts in the same manner as in Example 1 except that TiO ₂ (manufactured by Kojundo Chemical Laboratory Co., Ltd., purity 99% or more, particle size: 2 mm) was used for forming the dielectric film. Got the body.

  In Example 4, the relative dielectric constant after forming the dielectric film was 87 (1 MHz). Other measurement results were the same as in Example 1.

(Example 5)
A molded part for dielectric parts was obtained in the same manner as in Example 1 except that a base material made of PPS resin (Toyobo Co., Ltd., TS401, relative dielectric constant: 4) was used.

  The obtained molded parts for dielectric parts were evaluated in the same manner as in Example 1.

  In Example 5, the relative dielectric constant after forming the dielectric film was 13 (1 MHz). Other measurement results were the same as in Example 1.

(Example 6)
A molded body for dielectric parts was obtained in the same manner as in Example 1 except that annealing was not performed after film formation.

  The obtained dielectric film had a relative dielectric constant of 96 (1 MHz) after the formation of the dielectric film, and the other measurement results were the same as in Example 1. However, as compared with Example 1, the relative dielectric constant was reduced by about 10%, and the surface of the dielectric film showed an interference color.

(Comparative Example 1)
A dielectric component molded body was obtained in the same manner as in Example 1 except that oxygen gas was not contained and argon gas was introduced at a gas flow rate of 300 cc / min when forming the conductive film.

  The obtained molded parts for dielectric parts were evaluated in the same manner as in Example 1.

  In Comparative Example 1, it peeled off in the moisture resistance test.

Claims (11)

  The surface of the base material made of a thermoplastic resin or glass fiber-containing thermoplastic resin is subjected to high-frequency excitation plasma treatment under reduced pressure in an oxygen-containing atmosphere, and then applied to the surface of the base material by a vacuum film formation method. A method for producing a molded article for a dielectric component, comprising forming a conductive film and forming a dielectric film on the conductive film.   The method for producing a molded article for a dielectric component according to claim 1, wherein a polyamide resin or a polyphenylene sulfide resin containing glass fibers is used as the substrate.   The method for manufacturing a molded article for dielectric parts according to claim 1 or 2, wherein the high-frequency excitation plasma treatment is performed in an oxygen plasma atmosphere or a mixed plasma atmosphere of argon plasma and oxygen plasma.   The dielectric film according to any one of claims 1 to 3, wherein the conductive film is formed by an ion plating method in an argon plasma and oxygen plasma mixed atmosphere and then in an argon plasma atmosphere. A method for producing a molded body for body parts.   5. The molding for a dielectric part according to claim 4, wherein the lower layer of the conductive film is formed of oxidized copper, and the upper layer of the conductive film is formed of non-oxidized copper. Body manufacturing method. 6. The method for manufacturing a molded part for a dielectric component according to claim 1, wherein an SiO ₂ film, a TiO ₂ film, or a BaTiO ₃ film is formed as the dielectric film.   The method for producing a molded part for a dielectric component according to any one of claims 1 to 6, wherein the dielectric film is formed by an ion plating method in a mixed atmosphere of argon plasma and oxygen plasma. .   The method for manufacturing a molded part for dielectric parts according to any one of claims 1 to 7, wherein heat treatment is performed at a temperature of 80 ° C or higher after the formation of the dielectric film.   The manufacturing method according to claim 1, comprising a base material made of a thermoplastic resin or a thermoplastic resin containing glass fibers, and a conductive film and a dielectric film formed on the base material. A molded part for dielectric parts, characterized by being manufactured by the method described above.   The dielectric part molded body according to claim 9, wherein the conductive film has a thickness of 0.5 to 10 μm.   The dielectric part molded body according to claim 9, wherein the dielectric film has a thickness of 0.5 to 2.0 μm.