JP2008098498A5 - - Google Patents

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Publication number
JP2008098498A5
JP2008098498A5 JP2006280113A JP2006280113A JP2008098498A5 JP 2008098498 A5 JP2008098498 A5 JP 2008098498A5 JP 2006280113 A JP2006280113 A JP 2006280113A JP 2006280113 A JP2006280113 A JP 2006280113A JP 2008098498 A5 JP2008098498 A5 JP 2008098498A5
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JP
Japan
Prior art keywords
substrate
electrode pad
insulating film
hole
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006280113A
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English (en)
Japanese (ja)
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JP2008098498A (ja
JP5103861B2 (ja
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Priority to JP2006280113A priority Critical patent/JP5103861B2/ja
Priority claimed from JP2006280113A external-priority patent/JP5103861B2/ja
Publication of JP2008098498A publication Critical patent/JP2008098498A/ja
Publication of JP2008098498A5 publication Critical patent/JP2008098498A5/ja
Application granted granted Critical
Publication of JP5103861B2 publication Critical patent/JP5103861B2/ja
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JP2006280113A 2006-10-13 2006-10-13 半導体装置、半導体装置の製造方法、回路基板および電子機器 Active JP5103861B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006280113A JP5103861B2 (ja) 2006-10-13 2006-10-13 半導体装置、半導体装置の製造方法、回路基板および電子機器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006280113A JP5103861B2 (ja) 2006-10-13 2006-10-13 半導体装置、半導体装置の製造方法、回路基板および電子機器

Publications (3)

Publication Number Publication Date
JP2008098498A JP2008098498A (ja) 2008-04-24
JP2008098498A5 true JP2008098498A5 (https=) 2009-11-19
JP5103861B2 JP5103861B2 (ja) 2012-12-19

Family

ID=39381010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006280113A Active JP5103861B2 (ja) 2006-10-13 2006-10-13 半導体装置、半導体装置の製造方法、回路基板および電子機器

Country Status (1)

Country Link
JP (1) JP5103861B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539624B2 (ja) * 2008-04-28 2014-07-02 ラピスセミコンダクタ株式会社 薄膜抵抗素子、及び薄膜抵抗素子の製造方法
US7786600B2 (en) * 2008-06-30 2010-08-31 Hynix Semiconductor Inc. Circuit substrate having circuit wire formed of conductive polarization particles, method of manufacturing the circuit substrate and semiconductor package having the circuit wire
EP2463896B1 (en) * 2010-12-07 2020-04-15 IMEC vzw Method for forming through-substrate vias surrounded by isolation trenches with an airgap and corresponding device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983996B2 (ja) * 2001-04-23 2007-09-26 株式会社ルネサステクノロジ 半導体集積回路装置
JP2004095849A (ja) * 2002-08-30 2004-03-25 Fujikura Ltd 貫通電極付き半導体基板の製造方法、貫通電極付き半導体デバイスの製造方法
JP2005093486A (ja) * 2003-09-12 2005-04-07 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP3821125B2 (ja) * 2003-12-18 2006-09-13 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、回路基板、電子機器
JP4873517B2 (ja) * 2004-10-28 2012-02-08 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

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