JP2008078011A - Light-emitting device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To avoid occurrence of various problems resulting from precision insufficiency of coating formation in a light-emitting device. <P>SOLUTION: The light-emitting device 1 is provided with a substrate 10, first barrier ribs 20 which are formed on the substrate 10, extend in row direction, and divide the region on the substrate to separate into a plurality of rows R, and pixels which are arranged by a plurality of pieces in a plurality of rows R and interpose a hole injection layer 13 and a light-emitting layer 14 between a positive electrode 11 and a negative electrode formed on the substrate. The first barrier ribs 20 have a shape or a height which prevents that a negative electrode layer 15 formed by vapor deposition on a region of the substrate 10 to become the negative electrode climbs over the first barrier rib 20 and extends. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a light emitting device and an electronic apparatus whose optical characteristics change according to an electrical action.

In Patent Document 1, a barrier surrounding each of a plurality of regions is formed, a material is applied in each region to form a hole injection layer and a light emitting layer, and an electrode layer covering all the light emitting layers is formed thereon. A method of forming a device having a plurality of pixels (for example, organic EL elements) by forming is described. In this method, an ink jet method is adopted for applying the material of the hole injection layer and the light emitting layer, and the coating can be performed for each region.
JP 2000-323276 A

  In the ink-jet method, it is necessary to accurately transport the ink discharge nozzles of the ink-jet head to each region, and to finely and accurately control the discharge amount and discharge timing of the material. That is, high accuracy is required. However, the higher the required resolution (the narrower the inter-pixel pitch), the more difficult it is to paint with sufficiently high accuracy, and various problems due to insufficient accuracy are likely to occur. For example, there is a high possibility that light emission unevenness occurs due to variations in the discharge amount, or that light-emitting or non-light-emitting organic EL elements are formed due to insufficient accuracy of conveyance or discharge timing.

  Accordingly, an object of the present invention is to provide a light emitting device and an electronic apparatus that can avoid the occurrence of various problems due to insufficient accuracy of color separation.

A light-emitting device according to the present invention includes a substrate, a first barrier formed on the substrate, extending in a row direction, dividing a region on the substrate into a plurality of rows, and a plurality of the barriers in the rows. And a pixel having a configuration in which one or a plurality of coating layers are sandwiched between a first electrode and a second electrode formed on the substrate, and the first barrier is deposited on the region The conductive layer to be the second electrode formed by the step has a shape or height that prevents the conductive layer from extending over the first barrier.
According to this light emitting device, at least one coating layer of all the pixels in the inside can be collectively formed by performing coating using an inkjet device or a dispenser device on a row. Therefore, in that process, the accuracy required for controlling the ink jet device and the dispenser device (the accuracy of color separation) can be kept low. Therefore, the manufacturing process can be simplified. Moreover, since the variation in the film thickness due to the difference in the coating amount is reduced in each pixel, it is possible to reduce the variation in luminance and life of each pixel.
Further, according to this light emitting device, it is possible to drive the duty of the pixel. This is advantageous in realizing high resolution (narrow pixel pitch).
According to the light emitting device, the first barrier has a shape or height that prevents the conductive layer that is formed by vapor deposition and becomes the second electrode from extending over the first barrier. A plurality of second electrodes can be collectively formed with high accuracy by vapor deposition.

  In the above light-emitting device, the contact disposed in each of the plurality of rows and in contact with the conductive layer in the row, the contact formed on the substrate, and extending in a direction different from the row direction. In each row, a second barrier that separates the row into a region that does not include the pixel and includes the contact and another region is provided as a coating barrier, and the conductive barrier includes the second barrier. It may have a height that does not hinder overcoming the barrier and cannot get over any of the one or more coating layers. In this aspect, since the second barrier has a height that cannot overcome any of all the coating layers constituting the pixel, the contact and the conductive layer are in direct contact with each other. Therefore, the conductive performance between the two is improved. Also, the second barrier does not prevent the conductive layer from extending beyond the second barrier. Therefore, the wiring connecting the second electrode and the contact and the second electrode can be formed collectively.

  Further, in the above light emitting device, a third portion is formed on the substrate, extends in a direction different from the row direction, and divides each of the plurality of rows into a plurality of individual application regions by dividing each pixel. A barrier is provided as a coating barrier, and the pixel has a configuration in which a plurality of coating layers are sandwiched between the first electrode and the second electrode, and the coating barrier is a lowermost layer of the plurality of coating layers. You may make it have the height which enables formation for every said pixel, and formation for every said row | line | column of the uppermost layer of these application layers. In this aspect, since the third barrier exists, the lowermost layer of the coating layer can be formed for each pixel using the ink jet apparatus. The lowermost layer of the coating layer usually has a lower electrical resistance value than the uppermost layer of the coating layer. Therefore, the fact that the lowermost layer of the coating layer can be formed for each pixel leads to prevention of leakage between adjacent pixels. In addition, since the uppermost layer of the coating layer is formed collectively for each row, the above-described effects are maintained.

  Further, in the above light emitting device, a fourth barrier formed on the substrate and surrounding each of the pixels is provided as a coating barrier, and a plurality of the pixels are provided between the first electrode and the second electrode. The coating barrier enables formation of the lowermost layer of the plurality of coating layers for each pixel and formation of the uppermost layer of the plurality of coating layers for each row. You may make it have height. In this aspect, the distance from the peripheral edge of the pixel to the fourth barrier is substantially uniform. Therefore, the thickness of the lowermost layer of the coating layer can be made substantially uniform over the entire area of the pixel.

In the light-emitting device or each aspect described above, a cross-sectional shape of the first barrier in a plane orthogonal to the row direction may be a substantially inverted trapezoid, and a height of the first barrier is a height of the coating barrier. You may make it higher than this.
In the above light emitting device or each aspect, the first barrier may be composed of a plurality of layers. In addition, one of the plurality of layers constituting the first barrier may be formed of a material having a high etching rate, and a layer above the layer may be formed of a material having a low etching rate. Good. In addition, the coating barrier may be made of the same material as the one layer.
An electronic apparatus according to the present invention includes the above light emitting device. Therefore, there are effects resulting from the various effects described above.

  Embodiments according to the present invention will be described below with reference to the accompanying drawings. The light emitting device according to each embodiment is used as an optical head for forming a latent image by irradiating light to an image carrier such as a photosensitive drum in an electrophotographic image forming apparatus. As an organic EL element. In the drawings, the ratio of dimensions of each part is appropriately changed from the actual one.

<First Embodiment>
FIG. 1 is a plan view of a light emitting device 1 according to a first embodiment of the present invention. However, in this figure, illustration of the protective layer for protecting an organic EL element from external air is abbreviate | omitted. In the light emitting device 1, a plurality of pixels are arranged in each of a plurality of rows R on the substrate 10. In this figure, the opening P of each pixel is shown. All the pixels are arranged in a zigzag pattern as a whole. The row R is an area extending in the longitudinal direction (row direction) of the substrate 10. In the present embodiment, the number of rows R is 3, but it may be 2 or 4 or more.

  2 is a cross-sectional view taken along line A1-A1 'of the light-emitting device 1 shown in FIG. 1, and FIG. 3 is a cross-sectional view taken along line B1-B1' of the light-emitting device 1 shown in FIG. The substrate 10 has a configuration in which a layer (for example, a wiring layer) for driving pixels is formed on a transparent flat plate. On the substrate 10, a plurality of anodes (first electrodes) 11 are arranged in a plurality of rows R on the substrate 10. All the anodes 11 are arranged in a zigzag pattern as a whole.

  A contact 30 is formed on the substrate 10. Two contacts 30 are arranged in each of the plurality of rows R, and one in each row R, one at each end. An insulating layer 12 is formed on the substrate 10. The insulating layer 12 is on the anode 11 and the contact 30 and covers all the anodes 11 and all the contacts 30 so that the central region of the upper surface of each anode 11 and the central region of the upper surface of each contact 30 are exposed. . A central region on the upper surface of the anode 11 is an opening P of the pixel. That is, the insulating layer 12 defines a formation region (pixel formation region) for each pixel. Further, the central region on the upper surface of the contact 30 is a contact region T. The contact 30 supplies a low potential to the electrodes of the pixels in the same row R through the conductive member in contact with the contact region T.

  A plurality of first barriers 20 are formed on the insulating layer 12. Each first barrier 20 extends in the row direction, and separates one region (all pixel array regions) in which all the pixels are arranged into a plurality of rows R by dividing each region. That is, the row R is a region between the first barriers 20. The first barrier 20 is made of, for example, a negative material, and has a substantially inverted trapezoidal cross-sectional shape (a cross-sectional shape in a plane orthogonal to the row direction), and a height of, for example, 5 μm to 6 μm. The negative material is, for example, polyimide.

  A plurality of second barriers (application barriers) 40 are formed on the insulating layer 12. Two second barriers 40 are disposed in each of the plurality of rows R, and in each row R, one second barrier 40 is disposed in the vicinity of the two contacts. In each row R, each second barrier 40 extends in a direction different from the row direction, specifically in a column direction orthogonal to the row direction, delimits the row R, includes a contact 30 and a region that does not include a pixel ( The edge) and other areas. That is, each row R is separated by the second barrier 40 into one end portion and a region between the other end portion and both end portions (in-row pixel arrangement region). The second barrier 40 is made of, for example, a positive material, and the planar shape thereof is a substantially square shape, the cross-sectional shape thereof (the cross-sectional shape in a plane orthogonal to the row direction) is a substantially trapezoid, and the height thereof is, for example, 2 μm to 3 μm. The positive material is, for example, acrylic.

  In each pixel formation region, a hole injection layer (coating layer) 13 is formed on the anode 11 and a light emitting layer (coating layer) 14 is formed on the hole injection layer 13 by a coating method. Further, a cathode layer (conductive layer) 15 is formed on the light emitting layer 14 by physical vapor deposition such as vapor deposition, sputtering, or ion plating. The thickness of the hole injection layer 13 is, for example, 50 nm, and the thickness of the light emitting layer 14 is, for example, 120 nm. The hole injection layer 13 and the light emitting layer 14 are formed over the entire in-row pixel arrangement region of the same row R. That is, the hole injection layer 13 and the light emitting layer 14 are common to all pixels. Note that the height of the insulating layer 12 is determined such that the upper surface thereof is higher than the upper surface of the hole injection layer 13 in the pixel formation region and lower than the upper surface of the light emitting layer 14. For this reason, the thickness of the portion of the hole injection layer 13 that contacts the insulating layer 12 is remarkably reduced, and the illustration thereof is omitted. In general, the material of the hole injection layer 13 has higher conductivity than the material of the light emitting layer 14 because of the role of injecting carriers, but the thickness of the portion of the hole injection layer 13 that contacts the insulating layer 12 is extremely thin. For this reason, the resistance of the hole injection layer 13 between the openings P is high, and crosstalk and leakage current between the openings P are reduced.

  The cathode layer 15 is formed over the entire region of the same row R. That is, the cathode layer 15 is common to all the pixels, and serves as the cathode of each pixel in each pixel formation region. The cathode layer 15 covers all the contacts 30 in the same row R, and is in contact with the contact region T of each contact 30 on the lower surface thereof. Although not shown, a protective layer is formed on the substrate 10 so as to cover all the cathode layers 15 and all the first barriers 20. In addition, the formation material of the board | substrate 10, the anode 11, the insulating layer 12, the positive hole injection layer 13, the light emitting layer 14, the cathode layer 15, and the contact 30, and the form of a protective layer are the same as that of a well-known light-emitting device.

  4-7 is a figure for demonstrating the manufacturing process of the light-emitting device 1. FIG. In manufacturing the light emitting device 1, first, as shown in FIG. 4, the anode 11 and the contact 30 are formed on the substrate 10, and then the insulating layer 12 is formed. Next, as shown in FIG. 5, the first barrier 20 and the second barrier 40 are formed on the insulating layer 12. Thus, a plurality of rows R are defined, and an in-row pixel array region is defined in each row R. For the formation of the first barrier 20 and the second barrier 40, any method such as a printing method or a lithography method can be selected. For example, when the photolithography method is selected, the first barrier 20 is formed of a negative material such as photosensitive polyimide, and the second barrier 40 is formed of a positive material such as photosensitive acrylic. The process is simplified.

  Next, as shown in FIG. 6, the hole injection layer 13 is formed by applying the hole injection material solution with an ink jet apparatus or a dispenser apparatus and drying it. This application is performed on the in-row pixel array region for each row R. The hole injection material solution applied to each in-row pixel array region spreads over the entire in-row pixel array region and does not overflow to other regions. This is because the height of the hole injection material solution immediately after application is higher than that of the insulating layer 12, lower than the first barrier 20, and lower than the second barrier 40. Thus, the hole injection layer 13 is formed for each row R.

  Next, as shown in FIG. 7, the light emitting material solution is applied by an ink jet apparatus or a dispenser apparatus and dried to form the light emitting layer 14. This application is performed on the in-row pixel array region for each row R. The luminescent material solution applied to each in-row pixel array region spreads over the entire in-row pixel array region and does not overflow into other regions. This is because the height of the luminescent material solution immediately after application is higher than the hole injection layer 13 on the insulating layer 12, lower than the first barrier 20, and lower than the second barrier 40. Thus, the light emitting layer 14 is formed for each row R.

  Next, as shown in FIG. 7, a conductive material is formed on the entire pixel array region. Thereby, as shown in FIGS. 1-3, the some cathode layer 15 is formed. Here, physical vapor deposition methods such as vapor deposition, sputtering, and ion plating are used for forming the conductive material. In the conventional light emitting device, if a film is formed on all the pixel array regions, one thin film covering all the pixel array regions is formed. In the film formation in the present embodiment, each of the plurality of rows R is covered. A plurality of cathode layers 15 are collectively formed. Next, a protective layer is formed so as to cover all the cathode layers 15 and all the first barriers 20. Thus, the light emitting device 1 is completed.

  Here, the reason why the plurality of cathode layers 15 can be formed by vapor deposition for the entire pixel arrangement region will be described. First, the first reason will be described. In vapor deposition, particles of the vapor deposition material travel substantially straight from the vapor deposition source to the deposition surface. The angle between the traveling direction of the particles and the substrate 10 is about 90 degrees. On the other hand, the cross-sectional shape of the first barrier 20 is a substantially inverted trapezoidal shape, with the root being curled. For this reason, particles traveling from the vapor deposition source to the side surface of the first barrier 20 adhere to the upper surface of the first barrier 20 and hardly reach the side surface of the first barrier 20. Accordingly, the cathode layer 15 formed by vapor deposition on the entire pixel arrangement region is interrupted on the side surface of the first barrier 20.

Next, the second reason will be described. In the vapor deposition, the density of the particles of the vapor deposition material adhering to the vapor deposition surface increases as the angle formed by the traveling direction of the particles and the vapor deposition surface approaches 90 degrees, and decreases as the angle approaches 0 (or 180) degrees. On the other hand, the height of the first barrier 20 is significantly higher than the height of the light emitting layer 14. For this reason, the distance from the upper surface of the light emitting layer 14 to the upper surface of the first barrier 20 is increased, and the side surface of the first barrier 20 rises steeply from the upper surface of the light emitting layer 14. That is, the angle formed between the traveling direction of the particles of the vapor deposition material and the side surface of the first barrier 20 is close to 0 (or 180) degrees. For this reason, even if vapor deposition particles adhere to the side surface of the first barrier 20, the density is extremely low. Accordingly, the cathode layer 15 formed by vapor deposition on the entire pixel arrangement region is interrupted on the side surface of the first barrier 20.
Although the vapor deposition has been described here, a similar structure can be formed by using the physical vapor deposition method in which a thin film is anisotropically formed as in vapor deposition.

  As is clear from the above description, according to the light emitting device 1, by performing application using an inkjet device or a dispenser device to the in-row pixel arrangement region, the hole injection layer 13 of all the pixels inside The light emitting layer 14 can be formed collectively. Since the in-row pixel arrangement region is far wider than each region where individual pixels are formed, the light emitting device 1 can suppress the accuracy (coloring accuracy) required for controlling the ink jet device and the dispenser device to be low. it can. Moreover, since the variation in the film thickness due to the difference in the coating amount is reduced in each pixel, it is possible to reduce the variation in luminance and life of each pixel.

  In the light emitting device 1, since the cathode layer 15 is separated for each row, wiring for supplying a driving current to the organic EL element (specifically, wiring that contacts the anode 11) is arranged in the column direction. It is possible to adopt a configuration in which the three pixels are provided in common to the three pixels and the three pixels are duty-driven using one wiring. That is, according to the light-emitting device 1, the area | region required for wiring can be reduced. This is an advantage in realizing high resolution (narrow pixel pitch).

  As a method of separating the cathode layer 15 for each row, a method of forming the cathode layer by vapor deposition using a vapor deposition mask can be considered. However, in this method, a positional deviation of several hundred μm or a processing error occurs, so that the inter-pixel pitch between rows must be wide. On the other hand, in the light emitting device 1, the first barrier 20 that extends in the row direction and defines the plurality of rows R is formed by vapor deposition on the entire pixel arrangement region, and the cathode layer 15 that becomes the cathode of the pixel. Since it has a shape and a height that prevent it from extending over the first barrier 20, the plurality of cathode layers 15 can be formed with high accuracy by a single deposition.

  Further, in the light emitting device 1, the second barrier 40 has such a height that it cannot get over any of the hole injection layer 13 and the light emitting layer 14, so that the contact 30 and the cathode layer 15 are in direct contact with each other. Therefore, the conductive performance between the two is improved. Further, the second barrier 40 does not prevent the cathode layer 15 from extending over the second barrier 40. Accordingly, the wiring connecting the cathode of the pixel and the contact 30 and the cathode of the pixel can be formed together.

In addition, it is preferable that at least the surface of the second barrier 40 contains fluorine atoms to impart liquid repellency to a coating solution such as a hole injection material solution. As a method of including fluorine atoms in the second barrier 40, a surface treatment method in which plasma obtained by dissociating a material gas such as a fluorocarbon gas such as CF ₄ or a fluorine gas is exposed to the substrate on which the first barrier is formed, There is a method in which the material for forming the barrier 40 is formed by including fluorine atoms. The first barrier 20 and the second barrier 40 are formed of an organic resin such as acrylic or polyimide, the anode 11 and the insulating film 12 are each formed of an inorganic material such as ITO or SiO ₂ , and exposed to the above plasma, whereby the anode 11 and the insulating film 12, the first barrier 20 and the second barrier 40 can be made liquid repellent with respect to the hole injection material solution and the light emitting material solution. In addition, you may expose the plasma which dissociated material gas containing oxygen gas before exposing plasma which dissociated material gas, such as fluorocarbon gas and fluorine gas. Here, when a material liquid such as a hole injection material solution or a light emitting material solution is applied, the first and second barriers 20 and 40 cause another region (for example, a region where the contact 30 is formed) from the pixel formation region. ), The pixel formation region and the contact 30 are electrically connected via the conductive layer on the second barrier 40 when the plurality of cathode layers 15 are formed. The At this time, if at least the surface of the second barrier 40 contains fluorine atoms, the height of the second barrier 40 can be lowered, and the pixel of the conductive layer can be prevented while preventing the material liquid from overflowing. Electrical continuity between the formation region and the contact 30 can be ensured.
In the present embodiment, the planar shape of the second barrier 40 is a substantially rectangular shape, but other shapes may be used. An example of another shape is shown in FIG. In (A) to (C) of this figure, the side defining the in-row pixel arrangement region is bent along the opening P of the pixel closest to the second barrier 40. That is, the distance from the periphery of the opening P of the pixel to the second barrier 40 is substantially uniform. For this reason, the variation in the film thickness of the hole injection layer 13 and the light emitting layer 14 in each pixel becomes smaller. The side that defines the end of the row R may be bent to the opposite side of the side that defines the in-row pixel arrangement region as in (A), or may be a straight line as in (B), As shown in (C), it may be bent to the same side as the side defining the in-row pixel arrangement region.

  In the present embodiment, the first barrier 20 is formed by vapor deposition over the entire pixel arrangement region, and the shape and height of the cathode layer 15 that serves as the cathode of the pixel is prevented from extending over the first barrier 20. However, only such a shape or only such a height may be provided. For example, even if the cross-sectional shape of the first barrier 20 is a trapezoid like the second barrier 40, the height of the first barrier 20 is not high enough to prevent the cathode layer 15 from extending over the first barrier 20. The cathode layer 15 can be separated on the side surface. Examples of such height include a height higher than the height of the second barrier 40.

  In addition, for example, even if the height of the first barrier 20 is lower than the height that prevents the cathode layer 15 from extending over the first barrier 20, the shape of the first barrier 20 exceeds the first barrier 20. If it is a shape which prevents extending, the cathode layer 15 can be isolate | separated in the side surface. Needless to say, in the latter case, there is a condition that the upper surface of the first barrier 20 must be positioned at least above the upper surface of the cathode layer 15 on the light emitting layer 14. Of course, this condition is satisfied by making the height of the first barrier 20 higher than the height of the second barrier 40.

  Further, in the present embodiment, it is assumed that the first barrier 20 is configured by a single layer, but may be configured by a plurality of layers. FIG. 9 is a cross-sectional view showing a first barrier composed of two layers and a second barrier composed of one layer. (A) of this figure is a 1st barrier, (B) is a 2nd barrier. In the first barrier, the lower layer is made of a material having a high etching rate such as silicon nitride, and the upper layer is made of a material having a low etching rate such as glass. The second barrier is made of a material having a high etching rate such as silicon nitride. For this reason, in the step of forming the first barrier and the second barrier at once by performing wet etching by photolithography, the lower layer is sharpened more than the upper layer to have the shape of (A). Therefore, the cathode layer 15 is separated on the lower layer of the first barrier.

  In FIG. 9, the formation material of the second barrier and the formation material of the lower layer of the first barrier may be the same or different, and the second barrier may be formed of a material having a high etching rate. In addition, the method of making the first barrier into the shape as shown in (A) is not limited to the above method. For example, a method of forming the lower layer of the first barrier and the second barrier by wet etching and forming the upper layer of the first barrier by dry etching may be used.

<Second Embodiment>
FIG. 10 is a plan view of the light emitting device 2 according to the second embodiment of the present invention. However, in this figure, illustration of the protective layer for protecting an organic EL element from external air is abbreviate | omitted. 11 is a cross-sectional view taken along line A2-A2 ′ of the light emitting device 2 shown in FIG. In these drawings, parts common to the light emitting device 1 are denoted by the same reference numerals. The light emitting device 2 is different from the light emitting device 1 in that a third barrier (application barrier) 41 is provided instead of the second barrier 40.

  The third barrier 41 is formed on the insulating layer 12, and a plurality of third barriers 41 are arranged in the plurality of rows R. In each row R, each third barrier 41 extends in a direction different from the row direction, specifically, in a column direction orthogonal to the row direction, divides the row R for each pixel, and includes a plurality of pixels including only one pixel. It is divided into areas (individual application areas). The cross-sectional shape, planar shape, layer configuration, and forming material of the third barrier 41 are the same as those of the second barrier 40. The height of the third barrier 41 is a height that enables formation of the hole injection layer 13 for each pixel and formation of the light emitting layer 14 for each row R. That is, the height of the third barrier 41 is such that the top surface is above the top surface of the hole injection material solution just after application and below the top surface of the luminescent material solution just after application. . Specifically, it is 2 to 3 μm.

  Since the hole injection layer 13 has a lower electrical resistance value than the light emitting layer 14, if the hole injection layer 13 is formed in common for a plurality of pixels, there is a risk of leakage between adjacent pixels. However, according to the light emitting device 2, since the third barrier 41 exists, the hole injection layer 13 can be formed for each pixel using an ink jet device. Therefore, according to the light emitting device 2, it is possible to prevent the occurrence of leakage between adjacent pixels.

  On the other hand, the light emitting layer 14 can be collectively formed for each row R using an ink jet device or a dispenser device. Therefore, according to the light emitting device 2, it is possible to suppress the color separation accuracy with respect to the formation of the light emitting layer 14. Therefore, the manufacturing process is simplified. Further, in each pixel, the variation in film thickness due to the difference in the coating amount of the light emitting layer 14 is reduced, so that the variation in luminance and life of each pixel can be reduced.

  In addition, according to the light emitting device 2, as in the light emitting device 1, the pixel cathode can be driven, and a plurality of cathode layers 15 can be accurately and collectively formed by a single vapor deposition. As a result, it is possible to collectively form the wiring connecting the contact 30 and the cathode of the pixel.

  Also, the present embodiment can be modified in the same manner as the modification of the first embodiment. For example, the planar shape of the third barrier 41 may be the shape shown in FIG. Further, for example, the first barrier 20 may have only a shape that prevents the cathode layer 15 from extending over the first barrier 20, or only such a height. Examples of such height include a height higher than the height of the third barrier 41. Further, for example, as shown in FIG. 9, the first barrier 20 may be composed of a plurality of layers.

<Third Embodiment>
FIG. 12 is a plan view of the light emitting device 3 according to the third embodiment of the present invention. However, in this figure, illustration of the protective layer for protecting an organic EL element from external air is abbreviate | omitted. In this figure, parts that are the same as those of the light emitting device 1 are given the same reference numerals. The light emitting device 3 is different from the light emitting device 1 in that a fourth barrier (application barrier) 42 is provided instead of the second barrier 40.

  The fourth barrier 42 is a cylindrical barrier, is formed on the insulating layer 12, and a plurality of fourth barriers 42 are arranged in the plurality of rows R. In each row R, each fourth barrier 42 surrounds each of all the pixels in that row R. The distance from the periphery of the pixel opening P to the fourth barrier 42 is substantially uniform. The cross-sectional shape, layer configuration, and forming material of the fourth barrier 42 are the same as those of the second barrier 40. The height of the fourth barrier 42 is the same as the height of the third barrier 41. Therefore, in the present embodiment, the region surrounded by the fourth barrier 42 is an individual application region.

  According to the light emitting device 3, the same effect as the light emitting device 2 can be obtained. Furthermore, according to the light emitting device 3, since the distance from the periphery of the opening P of the pixel to the fourth barrier 42 is substantially uniform, the film thickness of the hole injection layer 13 is increased over the entire area of the opening P in each pixel. It can be made substantially uniform. Note that the present embodiment can be modified in the same manner as the modification of the first embodiment. For example, the first barrier 20 may have only a shape that prevents the cathode layer 15 from extending beyond the first barrier 20, or only such a height. Examples of such height include a height higher than the height of the fourth barrier 42. Further, for example, as shown in FIG. 9A, the first barrier 20 may be composed of a plurality of layers.

<Other variations>
FIG. 13 shows a configuration of a personal computer which is an electronic apparatus of the present invention. The personal computer 1030 includes a display unit 1031 and a main body unit 1032 as display units. The display unit 1031 includes any one of the light emitting devices 1 to 3 described above. The main body portion 1032 is provided with a power switch 1033 and a keyboard 1034. In addition, examples of the electronic device to which the light emitting device according to the present invention is applied include an electrophotographic image forming apparatus. Note that an organic EL element having only a light emitting layer between the anode 11 and the cathode may be used as a pixel, the anode 11 and the cathode may be reversed, or another light emitting element instead of the organic EL element. May be adopted as a pixel.

It is a top view of the light-emitting device 1 which concerns on the 1st Embodiment of this invention. It is A1-A1 'arrow sectional drawing of the light-emitting device 1 shown in FIG. FIG. 3 is a cross-sectional view taken along line B1-B1 ′ of the light emitting device 1 shown in FIG. FIG. 5 is a diagram for explaining a manufacturing process of the light emitting device 1. FIG. 5 is a diagram for explaining a manufacturing process of the light emitting device 1. FIG. 5 is a diagram for explaining a manufacturing process of the light emitting device 1. FIG. 5 is a diagram for explaining a manufacturing process of the light emitting device 1. FIG. 6 is a diagram illustrating another example of the planar shape of the second barrier of the light emitting device 1. It is a figure which shows the cross section of the 1st barrier in the modification of the light-emitting device 1, and the cross section of a 2nd barrier. It is a top view of the light-emitting device 2 which concerns on the 2nd Embodiment of this invention. It is A2-A2 'arrow sectional drawing of the light-emitting device 2 shown in FIG. It is a top view of the light-emitting device 3 which concerns on the 3rd Embodiment of this invention. It is a figure which shows the structure of the personal computer which is an electronic device of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1-3 ... Light-emitting device, 10 ... Board | substrate, 11 ... Anode (1st electrode), 12 ... Insulating layer, 13 ... Hole injection layer, 14 ... Light emitting layer, 15 ... Cathode layer (conductive layer), 20 ... 1st Barrier, 30 ... contact, 40 ... second barrier, 41 ... third barrier, 42 ... fourth barrier, 1030 ... personal computer (electronic device).

Claims (10)

A substrate,
A first barrier formed on the substrate, extending in a row direction, and dividing the region on the substrate into a plurality of rows;
A plurality of pixels arranged in the plurality of rows, each having a configuration in which one or a plurality of coating layers are sandwiched between a first electrode and a second electrode formed on the substrate,
The first barrier has a shape or height that is formed by physical vapor deposition in the region and prevents the conductive layer serving as the second electrode from extending over the first barrier.
A light emitting device characterized by that. A contact disposed in each of the plurality of rows and in contact with the conductive layer in the row;
Formed on the substrate, extending in a direction different from the row direction, dividing the row in each of the plurality of rows and separating the region including the contact and not including the pixel and another region. A second barrier as an application barrier;
The coating barrier has a height that does not prevent the conductive layer from extending over the second barrier and cannot overcome any of the one or more coating layers;
2. The light-emitting device according to 1, wherein A third barrier formed on the substrate, extending in a direction different from the row direction, and dividing each of the plurality of rows into pixels to divide into a plurality of individual application regions, as an application barrier;
The pixel has a configuration in which a plurality of coating layers are sandwiched between the first electrode and the second electrode,
The coating barrier has a height that enables formation of the bottom layer of the plurality of coating layers for each pixel and formation of the top layer of the plurality of coating layers for each row.
The light-emitting device according to claim 1. A fourth barrier formed on the substrate and surrounding each of the pixels as a coating barrier;
The pixel has a configuration in which a plurality of coating layers are sandwiched between the first electrode and the second electrode,
The coating barrier has a height that enables formation of the bottom layer of the plurality of coating layers for each pixel and formation of the top layer of the plurality of coating layers for each row.
The light-emitting device according to claim 1. A cross-sectional shape of the first barrier in a plane orthogonal to the row direction is a substantially inverted trapezoid;
The light emitting device according to claim 1, wherein the light emitting device is a light emitting device. The height of the first barrier is higher than the height of the coating barrier;
The light emitting device according to claim 1, wherein the light emitting device is a light emitting device. The first barrier is composed of a plurality of layers.
The light-emitting device according to claim 1, wherein the light-emitting device is a light-emitting device. One of the plurality of layers constituting the first barrier is formed of a material having a high etching rate, and a layer above the layer is formed of a material having a low etching rate.
The light-emitting device according to claim 7. The coating barrier is formed of the same material as the one layer;
The light emitting device according to claim 8. The light-emitting device according to claim 1.
An electronic device characterized by that.

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