JP2008053464A - Applicator and developer, resist pattern formation apparatus, application and development method, method of forming resist pattern, and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To precisely control the line width of a resist pattern in the longitudinal direction of a substrate to be processed, and between substrates to be processed. <P>SOLUTION: The applicator and developer comprises a heating unit which is equipped with a hot plate capable of making a heating control of a plurality of heating regions independently by a plurality of heaters, and heats the substrate to be processed before development after exposing it by the hot plate; an optical measurement unit for measuring optical properties of each region by irradiating the regions corresponding to the individual heating regions of the substrate to be processed, before it is applied with a resist liquid with light; a storage which stores preliminarily found correlations among optical properties of a base film of the substrate to be processed, heating temperatures of the heaters, and the line widths of the resist pattern; and a control means which calculates the heating temperature of the heater for each heating region based on the optical properties of the base film of the substrate to be processed, which have been measured by the optical measurement unit, a target value for the line width of the resist pattern, and the correlations stored in the storage portion, and controlling the temperature of each heating region by the hot plate based on the calculated heating temperature of the heater. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention provides a coating unit that forms a resist film by applying a resist solution to a substrate having a base film formed on the surface of the substrate, and forms a resist pattern by developing the substrate to be processed after exposure. A resist pattern forming apparatus, a coating and developing method, and a resist pattern, each of which includes a coating and developing apparatus including a developing unit, and an exposure apparatus that exposes a substrate to be processed after resist coating in addition to the coating unit and the developing unit And a storage medium including a computer program for carrying out these methods.

  Conventionally, in a photoresist process, which is one of semiconductor manufacturing processes, for example, a resist film is formed by coating a resist solution on the surface of a semiconductor wafer (hereinafter referred to as a wafer), and the resist film is exposed in a predetermined pattern. Later, development is performed to create a resist pattern. Such processing is generally performed using a resist pattern forming apparatus in which an exposure apparatus is connected to a coating / developing apparatus for applying and developing a resist.

The wafer is, for example, on a silicon substrate (bare silicon), various films such as a SiO2 film and a SiN film for forming wiring on the wafer, and an influence on a resist pattern due to light reflection of these various films at the time of exposure. In this configuration, a base film made of an antireflection film that suppresses the above is laminated. The various films forming the wiring are formed before the wafer is carried into the coating and developing apparatus. In the coating and developing apparatus, the antireflection film and the resist film are placed on the surface of the film forming the wiring. They are formed in this order from top to bottom.

  The wafer on which the resist film is formed is subjected to an exposure process in an exposure apparatus, then transferred to a heating unit in a coating and developing apparatus, and subjected to a heating process called PEB (post-exposure baking) to be exposed on the resist film. The shape of the resist pattern is adjusted by removing the influence of the standing wave that is sometimes received. After the PEB processing, the wafer is transferred to the developing unit, and a portion corresponding to a portion exposed by the developing processing or a portion corresponding to a portion not exposed is removed to form a resist pattern.

  The heating temperature of the wafer in the PEB and the exposure amount of the wafer in the exposure process greatly affect the dimensions of the resist pattern to be formed. When a resist film is formed using a chemically amplified resist, an acid catalyst is generated on the surface of the resist film by the exposure process, and the acid catalyst is diffused widely inside the resist by this PEB, affecting the development process. Therefore, the heating temperature of PEB has a greater influence on the dimension of the pattern.

  By the way, a demand for miniaturizing a resist pattern is increasing year by year due to a demand for miniaturization of semiconductor products, and it is required to control the dimension (CD) of the resist pattern with high accuracy. When controlling the pattern, the processing environment of each part of the coating and developing apparatus may be adjusted using a test wafer in which a resist film is directly formed on each flat and uniform silicon substrate without forming a base film. However, even if good pattern dimensional control is performed on this test wafer, the surface of the wafer is applied when a wafer having a base film formed on the silicon substrate is applied and carried into a developing device to produce a product. There are cases where the dimension (line width) of the pattern varies in each region.

  From the state of occurrence of such variations, it is considered that variations in pattern dimensions are associated with, for example, film thickness and density in the underlying film. In other words, since the film quality of the underlying film is different in each region in the surface of the wafer, it is considered that each region is not uniformly affected by the heat treatment and the exposure processing, and therefore, the pattern dimensions vary. Variations in film quality such as film thickness and density can be expressed as variations in optical properties because they exhibit different reactions when light is irradiated onto films with varying film quality. The optical properties here are reflectance and optical constant, and factors constituting the optical constant include refractive index (n) and extinction coefficient (k).

  As described above, the base film is usually composed of a plurality of stacked layers, and is formed through many processes. Even if the variation in each process is minute, the base film is When formed, as a result of the accumulated variation, it may appear as a large variation in optical properties, and therefore it may be difficult to predict or suppress the degree of variation in the optical properties of the underlying film. .

  At present, the size of the wafer is increasing in order to improve the throughput. However, if the size of the wafer is increased, the optical properties of the above-described underlayer are likely to vary within the surface of the wafer. The increase in CD variation due to such variations in the underlying film may reduce the yield.

  In addition, each wafer may be warped by being subjected to various processes while the base film is formed. This warpage is likely to occur when the wafer is increased in size, and the variation in the amount of warpage in each region within the surface may be increased. Due to this warp, the temperature of each region in the wafer surface during PEB is different, or the distance from the light source during exposure is different, and the energy of the exposure beam irradiated for each region in the wafer surface. The pattern size may further vary in each in-plane region due to the difference between the two.

Patent Document 1 describes a method for controlling a resist pattern by changing the heat treatment condition and the exposure process condition based on the optical properties of the underlying film. Cannot be solved.
JP 2001-332491 A

  The present invention has been made in order to solve such a problem, and its purpose is to form a resist pattern by forming a resist film on a substrate to be processed having a base film formed on the surface of the substrate. An object of the present invention is to provide a technique capable of controlling the line width of a resist pattern within a surface of a substrate to be processed and between the substrates to be processed with high accuracy.

The coating and developing apparatus of the present invention is a coating and developing apparatus that applies a resist solution to a substrate to be processed having a base film formed on the surface of the substrate, and develops the substrate to be processed after exposure to form a resist pattern. In
A heating unit capable of independently controlling heating of a plurality of heating regions by a plurality of heaters, a heating unit for heating a substrate to be processed before development after exposure by the heating plate;
An optical measurement unit that measures the optical properties of each region by irradiating light to the region corresponding to each heating region of the substrate to be processed before applying the resist solution;
A storage unit that stores the correlation between the optical properties of the base film of the substrate to be processed, the heating temperature of the heater, and the line width of the resist pattern, which are obtained in advance,
The heating temperature of the heater is calculated for each heating region based on the optical property of the base film of the substrate to be processed measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage unit. Control means for controlling the temperature of each heating region of the hot plate based on the calculated heating temperature;
It is provided with.

  The apparatus further includes, for example, a warp measurement unit that measures a warp amount of each measurement region of the substrate to be processed, and the control unit calculates the hot plate in each heating region based on the measured warp amount. A correction value for the heating temperature is calculated, and the temperature of each heating region of the hot platen is controlled based on the correction value and the heating temperature.

The resist pattern forming apparatus of the present invention applies a resist solution to a substrate to be processed on which a base film is formed on the surface of the substrate, then exposes the substrate to be processed, and further develops the substrate to be processed after the exposure. In a resist pattern forming apparatus for forming a resist pattern,
An exposure apparatus capable of setting an exposure amount for each area obtained by dividing the surface of the substrate to be processed into a plurality of areas;
An optical measurement unit that measures the optical properties of each region by irradiating light into regions corresponding to the plurality of regions of the substrate to be processed before resist film formation;
A storage unit in which the correlation between optical properties, exposure amount, and line width of the resist pattern, which are obtained in advance, is stored;
The exposure amount is calculated for each region based on the optical properties measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage unit, and the exposure based on the calculated exposure amount A control unit for controlling the exposure amount of the apparatus;
It is provided with.

  The apparatus further includes, for example, a warp measurement unit that measures a warp amount of each measurement region of the substrate to be processed, and the control unit calculates an exposure amount of the exposure apparatus in each exposure region based on the measured warp amount. An exposure correction amount to be corrected is calculated, and the exposure amount of each exposure region is controlled based on the exposure correction amount and the calculated exposure amount.

The coating and developing method of the present invention is a coating and developing method in which a resist pattern is formed using a hot plate capable of independently heating and controlling a plurality of heating regions by a plurality of heaters after being exposed. ,
Irradiating the region corresponding to each heating region of the substrate to be processed with light, and measuring the optical properties of each region;
A step of forming a resist film by applying a resist solution to the surface of the base film after the optical property measurement;
Exposing a substrate to be processed on which a resist film is formed;
Data acquired in advance regarding the correlation between the optical properties obtained by irradiating the base film of the substrate to be processed, the heating temperature of the heater and the line width of the resist pattern, and the substrate to be processed measured in the step A step of calculating the heating temperature for each heating region based on the optical properties and the target value of the line width of the resist pattern;
A step of controlling heating of each heating region based on the calculated heating temperature;
Developing a heated substrate to be processed;
It is provided with.

In this method, for example, a step of measuring the amount of warpage of each measurement region of the substrate to be processed,
A step of calculating a correction temperature for correcting the calculated heating temperature based on the measured amount of warpage,
The step of heating the substrate to be processed is performed based on the heating temperature and the correction temperature.

The method for forming a resist pattern according to the present invention includes:
Irradiating each of a plurality of regions within the surface of the base film of the substrate to be processed to measure the optical properties of each region;
A step of forming a resist film by applying a resist solution to the surface of the base film after the optical property measurement;
Data acquired in advance about the correlation between the optical properties obtained by irradiating light to the underlayer of the substrate to be processed, the exposure amount of the exposure apparatus, and the line width of the resist pattern,
A step of calculating an exposure amount for each region based on the optical properties of the substrate to be processed measured in the step and a target value of the line width of the resist pattern;
Exposing the substrate to be processed with an exposure amount corresponding to the calculated exposure amount;
Heating the exposed substrate; and
Developing a heated substrate to be processed;
It is provided with.

In this method, for example, a step of measuring the amount of warpage of each measurement region of the substrate to be processed;
A step of calculating an exposure correction amount for correcting the calculated exposure amount based on the measured amount of warpage, and
The step of exposing the substrate to be processed is performed based on the exposure amount and the exposure correction amount,

The storage medium of the present invention is used, for example, in an apparatus for forming a resist pattern by applying a resist solution to a substrate to be processed having a base film formed on the surface of the substrate.
A storage medium storing a computer program that runs on a computer,
The computer program is characterized in that steps are set so as to implement the resist pattern forming method or the coating and developing method described above.

  The coating and developing apparatus according to the present invention is divided into a plurality of heating regions, and a heating unit including a heater for heating the substrate to be processed before development after exposure for each heating region, and the substrate to be processed before forming a resist film An optical measurement unit for measuring the optical properties of a plurality of measurement regions corresponding to the heating region within the surface of the base film and between the substrates to be processed, the optical properties obtained in advance, the temperature of the hot plate, and the resist pattern And a storage unit in which a correlation with the line width is stored, and the control means has optical properties measured by the optical measurement unit, a target value of the line width of the resist pattern, and a correlation between the storage units. Based on the above, the temperature of each heating region of the hot plate is controlled for each heating region. By adopting such a configuration, it is possible to suppress variations in the line width of the resist pattern for each measurement region due to variations in the optical properties of the base film within the surface of the substrate to be processed. The line width of the resist pattern between the inside and the substrate to be processed can be controlled with high accuracy. Therefore, it is possible to suppress a decrease in the yield of products manufactured from the substrate to be processed.

  The resist pattern forming apparatus of the present invention includes the above-described optical measurement unit and heating unit, and stores correlations between optical properties, hot plate temperature, and resist pattern line width, which are obtained in advance. A control unit having a storage unit is provided for each heating region for each heating region based on the optical properties measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage unit. In order to control the temperature of the region, it is possible to suppress variation in the line width of the resist pattern for each measurement region of the optical property, as in the above-described coating and developing apparatus of the present invention. The line width of the resist pattern between the inside and the substrate to be processed can be controlled with high accuracy.

  First, an outline of this embodiment will be described. In this embodiment, for example, for a substrate to be processed on which a base film is formed on a silicon substrate, the refractive index is determined as an optical property of each predetermined region in the surface of the base film before the resist film is formed on the base film. And the amount of warpage of the substrate to be processed in each region is measured. Then, for the wafer W after exposure and before development, the heating temperature for each region is measured based on the measured refractive index of each region and the amount of warpage of the wafer W so that the dimension of the resist pattern to be formed becomes a target value. Is trying to control.

  A resist pattern forming apparatus in which an exposure apparatus is connected to a coating and developing apparatus according to an embodiment of the present invention will be described. 1 and 2 are a schematic plan view and an overall perspective view of the coating and developing apparatus, respectively. In the figure, B1 is a carrier block of the coating and developing apparatus, and a carrier station 10 having a mounting portion 10a for loading and unloading a carrier C1 in which, for example, 13 wafers W are hermetically housed and stored, and this carrier. An opening / closing part 21 provided on the wall surface in front of the station 10 and a delivery means A1 for taking out the wafer W from the carrier C1 via the opening / closing part 21 are provided.

  The wafer W accommodated in the carrier C1 and carried into the coating and developing apparatus has, for example, a number of films made of SiO (silicon oxide), SiN (silicon nitride), etc. on a flat and uniform silicon substrate (bare silicon). The resist film formed in this coating / developing apparatus and the various anti-reflection films formed in the coating / developing apparatus are combined with the silicon substrate. This is called a base film.

  A processing block B2 surrounded by a casing 21 is connected to the back side of the carrier block B1, and the processing block B2 includes a shelf unit U1 including heating / cooling system units that are sequentially arranged from the front side. , U2, U3 and main processing means A2, A3 for transferring the wafer W between the liquid processing units U4, U5 are alternately arranged. The main transport means A2 and A3 have one surface on the shelf units U1, U2 and U3 arranged in the front-rear direction when viewed from the carrier block B1, and one surface on the right liquid processing unit U4 and U5 side which will be described later. , And is placed in a space surrounded by a partition wall 23 composed of a back surface portion forming one side of the left side. In the figure, reference numerals 24 and 25 denote temperature / humidity adjusting units including a temperature adjusting device for processing liquid used in each unit, a duct for adjusting temperature and humidity, and the like.

  For example, as shown in FIG. 2, the liquid processing unit U4 has a coating unit (BARC) for forming an antireflection film (hereinafter referred to as “reflection”) on a chemical solution storage portion for storing a resist solution or a chemical solution for forming an antireflection film. "Prevention film forming unit (BARC)") 26 in two stages, resist film forming coating unit (COT) (hereinafter referred to as "resist coating unit (COT)") 27 in three stages, in this order from top to bottom It is configured by stacking. The liquid processing unit U5 is configured by developing units (DEV) being stacked in five stages on a chemical solution storage unit that stores a developer and the like. The antireflection film forming unit 26, the resist coating unit 27, and the developing unit 28 are provided with nozzles for supplying a chemical solution, a resist solution, and a developing solution for forming the antireflection film to the surface of the wafer W, respectively.

  The above-described shelf units U1, U2, and U3 are configured by laminating various units for performing pre-processing and post-processing of the processing performed in the liquid processing units U4 and U5 in a plurality of stages. Hydrophobic treatment unit that performs hydrophobic treatment on the entire surface of the wafer W before coating, a heating unit called PAB for heating (baking) the resist-coated wafer W, and a heating unit 4 for performing PEB described in the background art section Further, a heating unit called POST that heats the wafer W after development, a cooling unit that cools the wafer W, and the like are included. The configuration of the heating unit 4 that performs PEB will be described later.

  The shelf unit U1 has a delivery stage (TRS) for delivering the wafer W between the carrier block B1 and the processing block B2. The shelf unit U3 has a wafer stage between the processing block B2 and the interface block B3. A delivery stage (TRS) for delivering W is included. For example, an optical measurement in which a wafer W on which an antireflection film is formed is loaded between the shelf units U1 and U2 at a position accessible by the main transfer mechanism A2, and the refractive index is measured as an optical property of the base film. A refractive index measurement unit 5 which is a unit is provided. The refractive index measurement unit 5 will be described later.

  An exposure apparatus B4 is connected to the back side of the shelf unit U3 in the processing block B2 via the interface block B3. The configuration of the interface block B3 will be described with reference to FIG. The interface block B3 is composed of a first transfer chamber 3A and a second transfer chamber 3B provided before and after the processing block B2 and the exposure apparatus B4. The transfer means 31A and the transfer means 31B are provided respectively. It has been. In the first transfer chamber 3A, the warp measurement unit 6 for measuring the warp of the wafer W, the transfer stage TRS32 for transferring the wafer W between the transfer means 31A and the transfer means 31B, and the temperature of the wafer W to be exposed are controlled. A high-precision temperature control unit 33 and a buffer cassette 34 for temporarily retracting the wafer W according to the transfer status are provided.

  Further, the exposure apparatus B4 is provided with stages 35 and 36 for transferring to and from the transfer means 31B of the interface unit B3. The stage 35 has a wafer W before exposure processing, and the stage 36 has a wafer W after exposure processing. Are placed respectively.

  Next, the configuration of the heating unit 4 that performs PEB provided in the shelf units U1 to U3 will be described with reference to FIG. 4A and 4B are a cross-sectional plan view and a longitudinal side view of the heating unit 4, respectively. The heating unit 4 includes a housing 41, and a circular hot plate 43 and a cooling plate 44 are provided on a stage 42 in the housing 41. The cooling plate 44 moves in the left-right direction in the drawing to cool the mounted wafer. A transfer port 46 that can be opened and closed by a shutter 45 is provided on the side wall of the housing 41, and the wafer W is transferred between the main transfer means A 2 and A 3 that have entered the housing 41 through the transfer port 46 and the cooling plate 44. It is. In the figure, 47 and 48 are three pins that can be raised and lowered (only two are shown in the figure), the pin 47 is between the cooling plate 44 and the main conveying means A2 and A3, and the pin 48 is Wafers W are transferred to and from the plate 43, respectively. In the figure, 46 a is a slit provided in the cooling plate 44 for allowing the pins 47 and 48 to pass therethrough, and 43 a is a hole provided in the hot plate 43 for allowing the pins 48 to pass therethrough.

  FIG. 5 is a top view of the hot plate 43. The hot plate 43 surrounds the central disc-shaped region R1 and the region R1, for example, and the fan-shaped regions R2 to R1 that are equally divided in the circumferential direction around the region R1. The heaters 40a to 40e corresponding to the shape of each region are embedded in each region R1 to R5. Each heater 40a-40e is connected to the below-mentioned control part 7 via the controller 49. FIG. In response to the control signal transmitted from the control unit 7, the controller 49 supplies power to the heaters 40a to 40e independently of each other, and the heaters 40a to 40e are respectively controlled to a predetermined temperature, as shown in FIG. Thus, in the wafer W placed on the hot plate 43, the regions P1 to P5 indicated by chain lines corresponding to the regions R1 to R5 of the hot plate 43 are heated to temperatures corresponding to the temperatures of the heaters 40a to 40e, respectively. Is done.

  Next, the refractive index measurement unit 5 will be described with reference to FIG. The refractive index measurement unit 5 includes a housing 51, and a stage 52 for placing a wafer W is provided in the housing 51. The stage 52 is provided on the side walls of the main transfer means A 2 and A 3 and the housing 51. The wafer W is transferred through the transfer port 53. Below the stage 52, a rotation drive unit 54 that rotates the stage 52 about the vertical axis is provided. The rotation drive unit 54 is provided on the XY drive unit 55, and the XY drive unit 55 together with the rotation drive unit 54 is provided. The stage 52 is moved in the front / back direction and the left / right direction of the drawing.

  Above the stage 52, a light irradiation unit 56 for irradiating light onto the wafer W placed on the stage 52 is provided. The light irradiation unit 56 includes, for example, a laser light source 56a, a polarizer 56b, a correction plate 56c, and the like. I have. On the stage 52, there is provided a light receiving unit 57 for receiving the light irradiated from the light irradiation unit 56 to the base film of the wafer W and reflected from the base film. The light receiving unit 57 includes an analyzer 57a, a photodetector 57b, and the like.

  The operation of the XY stage 55, the rotation drive unit 54, and the light irradiation unit 56 is controlled by the control unit 7, and the light irradiation unit 56 sequentially irradiates light to, for example, the respective regions P1 to P5 in the surface of the wafer W. The light receiving unit 57 detects the reflected light of the irradiated light, and transmits a control signal corresponding to the detected reflected light to the control unit 7, and the control unit 7 controls the phase and amplitude of the reflected light based on the control signal. And the like, the refractive index of the base film in each region P1 to P5 of the wafer W is calculated.

  Next, the warpage measurement unit 6 will be described. FIG. 8A is a longitudinal front view of the warp measurement unit 6. As shown in FIG. 8, the warp measurement unit 6 includes a housing 61, and a circular stage 62 on which the wafer W is placed is provided in the housing 61. It has been. A plurality of pins 63 that support the back surface of the wafer W are provided on the surface of the stage 62.

  FIG. 8B is a perspective view showing the configuration of each part in the housing 61. In the figure, 64 is a hole penetrating the stage 62 in the thickness direction, and the transfer means 31A enters the case 61 through the transfer port 65 provided on the side wall of the case 61, and the wafer W is placed on the stage 62. At this time, the air accumulates between the stage 62 and the wafer W, thereby preventing the wafer W from sliding on the stage 62. A notch 62a is provided at the peripheral edge of the stage 62 so as to correspond to the shape of the conveying means 31A. The stage 62 is configured to be rotatable about a vertical axis and freely movable up and down via a drive mechanism 66 provided at a lower portion thereof.

  Laser displacement meters 68 and 69 are provided above the center of the stage 62 and above the peripheral edge in a state of being supported by a support member 67, respectively. For example, while the stage 32 is rotating, these laser displacement meters 68 and 69 irradiate the center portion and the peripheral portion of the wafer W placed on the stage 62 with a laser and receive the reflected light, and the laser displacement meters The distances from 68 and 69 to the central portion and the peripheral portion of the wafer W are measured, and a control signal corresponding to the measured distance is transmitted to the control unit 7. Based on the transmitted control signal, the control unit 7 calculates the warpage amount of each region P1 to P5 of the wafer W.

  Next, the configuration of the control unit 7 will be described with reference to FIG. The control unit 7 includes a data bus 71, and a CPU 72 and a program storage unit 73 that perform various calculations are connected to the data bus 71. In the program storage unit 73, the operation of a coating and developing device, which will be described later, that is, temperature adjustment of the wafer W in each heating unit and cooling unit, film formation processing of each film on the wafer W, and delivery of the wafer W between the units. A program 74 made of, for example, software in which an instruction is set so as to perform measurement of the refractive index of the base film and the warp of the wafer W is stored.

  When the program 74 is stored in the program storage unit 73 and read out by the control unit 7, the control unit 7 transmits a control signal to each part of the coating and developing apparatus, and controls the operation of the coating and developing apparatus. The program 74 is stored in the program storage unit 73 while being stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card.

  A storage unit 75 is connected to the data bus 71. This storage unit stores a correlation 76 between the resist pattern dimension (CD) and the refractive index, a correlation between the heater temperature and CD, and a correlation 77 between the warpage amount and the heater temperature correction amount. Further, the target value of the resist pattern dimension (CD) is inputted from, for example, an external input means, and is overwritten and stored on the previously inputted target value. The correlations 76 and 77 show, for example, the relation with respect to the heater 40a at the center of the hot plate 43. Although not shown, the other heaters 40b to 40e are similar to the correlations 76 and 77, for example. A correlation slightly different from these is stored.

  The correlation 76 between the resist pattern dimension (CD) and the refractive index is stored, for example, as a graph shown in FIG. 10A. The straight line k1 in this graph indicates the heater 40a for the wafer W provided with the base film. A series of resist pattern forming steps are performed by setting the temperature of the substrate to a temperature corresponding to the target value of CD, and the relationship between the refractive index of each base film and the formed CD is plotted as shown in the figure. It was created based on. The CD is measured using, for example, a line width measuring unit provided outside the coating and developing apparatus.

  The correlation 77 between the temperature of the heater 40a and the CD is stored as a graph shown in FIG. 10B, for example. The straight line k2 in this graph is based on a plot in the figure obtained by performing PEB by changing the temperature of the heater 40a and forming a resist pattern on a wafer in which a resist is uniformly applied to a silicon substrate, for example. It has been created. Thus, by directly forming the resist pattern on the silicon substrate, the correlation between the CD formed without being affected by the underlying film and the heating temperature is obtained.

  That is, the graph of FIG. 10B shows the relationship between the temperature of the heater 40a and the line width of the pattern to be formed when there is no variation in the base film, and the graph of FIG. It is intended to compensate for CD fluctuations when variations occur. Therefore, when the target value of the CD is actually determined, the heating temperature corresponding to the target CD can be selected from FIG. 10B in order to obtain the target value, and the amount corresponding to the change in the refractive index is selected. What is necessary is just to correct | amend temperature. The heating temperature in the claims is a temperature obtained by adding a temperature offset for the selected heating temperature and a predetermined offset amount as will be described later.

  As shown in the graphs 76 and 77, the pattern CD depends on the refractive index and the heater temperature. For example, the relational expressions of the straight lines X and Y are f and g, respectively, the refractive index is x, CD is y, and the heater. When the temperature is expressed as z, it can be expressed as a relational expression y = f (x) from FIG. 10A and z = g (y) = g [f (x)] from FIG. 10B. it can. When a target value of a new resist pattern dimension is input and the target value is stored in the storage unit 75, the control unit 7 calculates the reference value of the refractive index corresponding to the target value and each heater 40a from the relational expression. Calculate the reference value of the heating temperature of ˜40e. As described above, since the correlation between the CD that is different for each heater, the temperature of the heater, and the refractive index is stored, the reference value of each heater is slightly different for each heater.

The reference value of the heating temperature of the heater 40a and the reference value of the refractive index corresponding to the reference value of the heater 40a are represented by α and β, respectively, and are actually measured as described above in each region P1 of the wafer W, for example. If the refractive index is deviated by Δα from the reference value α, the control unit 7 calculates g [f (Δα)] as a predetermined offset amount of the heating temperature with respect to the refractive index deviation Δα for each region.

  When warpage is detected in each region P1 of the wafer W as described above, the control unit 7 determines the amount of warpage and the correlation between the warpage amount stored in the storage unit 7 and the correction temperature of the heater 40. A correction temperature for correcting the estimated offset amount g [f (Δα)] calculated based on the refractive index shift is calculated. Assuming that the amount of warpage is represented by γ and the correction temperature calculated from the amount of warpage γ is represented by h (γ), the control unit 7 is g [f (Δα)] with respect to the reference value β of the heating temperature, for example. By heating each of the heaters 40a with an offset of + h (γ), the wafer W is heated (PEB). When no warp is detected in the region P1, g [f (Δα)], which is a planned offset amount, is applied to the reference value β as an offset. Although the heater 40a has been described, calculation is performed for the other heaters 40b to 40e in the same manner as the heater 40a, and an offset is set.

  Next, the operation of the above coating and developing apparatus will be described with reference to FIG. FIG. 11 is a flowchart showing steps from the formation of a base film on the surface of the wafer W to the development process. First, the operator inputs a target value for the dimension of the resist pattern. Based on the target value input and stored in the storage unit 75, the control unit 7 calculates a reference value for the refractive index and a reference value for the heating temperature of each heater 40 a to 40 e of the heating unit 4.

  Subsequently, when the carrier C1 in which the wafer W is stored is loaded from the outside and placed on the mounting table 10a, the opening / closing part 11 is opened, the lid of the carrier C1 is removed, and the wafer W is taken out by the transfer means A1. . Then, the wafer W is transferred to the main transfer means A2 via a transfer stage (TRS) that forms one stage of the shelf unit U1.

  The main transfer means A2 transfers the wafer W to the antireflection film forming unit 26, where the raw material of the antireflection film is applied to the entire surface of the wafer W from the material supply nozzle, and then the wafer W is transferred by the main transfer means A2. It is conveyed to the heating unit which constitutes one shelf of the shelf units U1 to U3, is subjected to heat treatment, and an antireflection film is formed (step S1).

  After that, the wafer W is transferred to the main transfer means A2 → the cooling unit constituting one shelf of the shelf units U1 to U3 → the hydrophobic treatment unit constituting one shelf of the shelf units U1 to U3 → the shelf units U1 to U3. After being transported in the order of the cooling unit constituting the one shelf → the main transporting means A2, the main transporting means A2 carries it into the refractive index measuring unit 5 and is placed on the stage 52 thereof.

  The stage 52 on which the wafer W is placed moves to a predetermined position via the rotation driving unit 54 and the XY driving unit 55, and the light irradiation unit 56 first applies light to the base film in the region P1 in the plane of the wafer W, for example. When the light is received and the light receiving unit 57 receives the light reflected from the base film, the control unit 7 calculates the refractive index of the base film in the region P1 based on the received reflected light. Thereafter, the wafer W sequentially moves to a predetermined position via the rotation drive unit 54 and the XY drive unit 55, and the light irradiation unit 56 performs the regions P2 and P3 of the wafer W in the same manner as when the refractive index of the region P1 is measured. , P4, P5 are irradiated with light, and the control unit 7 calculates the refractive index of each of these regions based on the reflected light (step S2).

  After the refractive indexes of the regions P1 to P5 of the wafer W are measured, the wafer W is transferred to the resist coating unit (COT) 27 via the main transfer means A2, and a resist solution is applied to the surface of the antireflection film. (Step S3). After drying the resist solution, the wafer W is transferred to one heating unit of the shelf units U1 to U3 by the main transfer means A2 (A3), heated at a predetermined temperature (PAB), and a resist film is formed ( Step S4).

  After the resist film is formed, the wafer W is transferred from the main transfer means A2 (A3) → the cooling unit of the shelf units U1 to U3 → the main transfer means A3 → the transfer unit (TRS) of the shelf unit U3 → the transfer means of the interface block B3. 31A is conveyed to the warpage measuring unit 6 by the conveying means 31A and placed on the stage 62. Thereafter, a laser is emitted from the laser displacement meters 68 and 69 to the central portion and the peripheral portion of the wafer W, and the stage 62 is rotated. These laser displacement meters 68 and 69 receive the reflected light from the wafer W. Then, the control unit 7 calculates the amount of warpage of each region P1 to P5 of the wafer W based on the reflected light (step S5).

  After the measurement of the warpage amount, the wafer W is temporarily retracted to the buffer cassette 34 by the transfer means 31A, and then the transfer means 31A → the high-precision temperature control unit 33 → the transfer means 31A → the transfer stage TRS32 → the transfer means 31B → the exposure apparatus S4. Is then transferred to the stage 35, and thereafter subjected to an exposure process by the exposure apparatus S4 (step S6).

  The wafer W that has undergone the exposure process is placed on the stage 36, and then transferred in the order of transfer means 31B → transfer stage TRS32 → transfer means 31A → transfer stage of the shelf unit U3 of the processing block B2 → main transfer means A3. The transfer means A3 delivers the wafer W to the cooling plate 44 of the heating unit 4 constituting one shelf of the shelf units U1 to U3.

  For example, at this time, the control unit 7 calculates the refractive index reference value (α) based on the refractive index (α1) measured in the region P1 of the wafer W and the target value of the dimension (CD) of the resist pattern previously. ) And the correlation 76 between the CD and the refractive index stored in the storage unit 75 and the correlation 77 between the temperature of the heater 40 of the heating unit 4 and the CD stored in the storage unit 75, the deviation of the refractive index. The estimated offset amount (represented as Δβ) of the heater 40a corresponding to α−α1 (Δα) is calculated.

  The manner in which the estimated offset amount is calculated will be specifically described with reference to FIG. As shown in FIG. 12A, the control unit 7 determines the value of CD corresponding to α1 from the straight line k1 in the graph of the correlation 77 for the refractive index α1 taken from the refractive index measurement unit 5 (CD1). Ask for. Subsequently, the control unit 7 plots this CD1 on the horizontal axis of the graph of FIG. 12B, and reads the value β1 on the vertical axis corresponding to the plotted value on the horizontal axis. Further, the control unit 7 executes the arithmetic expression (β−β1), obtains the arithmetic value Δβ, and determines this Δβ as a planned offset amount for β.

  Further, the control unit 7 calculates a correction temperature amount for correcting the estimated offset amount from the correlation between the warpage amount measured in each region P1 of the wafer W and the warpage amount stored in the storage unit 75 and the temperature correction amount. Then, the heating temperature of the heater 40a corresponding to each region P1 of the wafer W is calculated and determined based on the corrected temperature amount, the offset expected amount, and the reference value of the heating temperature previously calculated from the target value of CD. The heating temperatures of the other heaters 40b to 40e are determined by calculation in the same manner as the heater 40a. Thereby, the control unit 7 outputs the calculated heating temperature as a set temperature to the controller 49, and the controller 49 is based on the set temperature and a temperature detection value of a temperature detection unit (not shown) provided in each heating region. The power supplied to each heater is controlled, and thus temperature control is performed.

  When the heaters 40a to 40e are heated to the set temperature by the control unit 7, the wafer W is transferred from the cooling plate 44 to the hot plate 43, and the regions P1 to P5 of the wafer W are heated to perform PEB processing. (Step S7).

  The wafer W that has been subjected to the PEB process is transferred to the cooling plate 44, cooled, and then transferred to the developing unit 28 by the main transfer means A3, and the developer is supplied to the surface thereof, thereby developing the resist film developer. Is dissolved, and a predetermined resist pattern is formed on the resist film (step S8). Thereafter, the wafer W is transferred to the main transfer means A3 → the heating unit for one shelf in the shelf units U1 to U3 that performs POST → the main transfer means A3 → the cooling unit for one shelf in the shelf units U1 to U3 → the main transfer means A2. → Transfer stage of shelf unit U1 → Transfer in the order of transfer means A1 and returned to the original carrier C1 on the mounting table 20a by the transfer means A1.

  The coating and developing apparatus described above includes the refractive index measuring unit 5 that measures the refractive index that is an optical property of each of the regions P1 to P5 in the surface of the base film of the wafer W before the resist film is formed, and the regions P1 to P5. A heating unit 4 including a hot plate 43 provided with heaters 40a to 40e for heating the wafer W before exposure and performing PEB processing independently for each of the regions R1 to R5 corresponding to The refractive index measurement unit 5 measures the refractive index, the temperature of each heater, and the storage unit 75 that stores the correlation between the line widths of the resist patterns. The temperature of each heater 40a-40e is controlled based on the calculated refractive index, the target value of the line width of the resist pattern, and the correlation of the storage unit 75, and the temperature of each heating region R1-R5 of the hot plate 43 is controlled. . With such a configuration, it is possible to suppress variations in the resist pattern dimension between the regions P1 to P5 due to variations in the optical properties of the base film in the regions P1 to P5 in the plane of the wafer W. In addition, the dimension of the resist pattern in the surface of the wafer W can be controlled with high accuracy. Accordingly, it is possible to suppress a decrease in the yield of semiconductor products manufactured from the wafer W.

  In the coating and developing apparatus, the amount of warpage is measured for each of the regions P1 to P5 in the surface of the wafer W, and the temperature at which the regions P1 to P5 of the wafer W are heated during PEB is corrected based on the amount of warpage. As a result, variations in the dimensions of the resist pattern between the regions P1 to P5 can be further suppressed.

  The measurement of the refractive index of the wafer W and the setting of the corresponding heating temperature may be performed for every wafer W in the same lot, or after the first wafer W of the lot, the subsequent in the same lot. For the first wafer W, the refractive index may not be measured, and the respective regions P1 to P5 may be set to be heated at the respective heating temperatures set for the leading wafer W. In this way, whether the refractive index is measured and the heating temperature is set only for the leading wafer of the lot, or the refractive index is measured and the heating temperature is set again for the subsequent wafer W, for example, the leading wafer W of the lot. When a threshold value (allowable range) is set for the refractive index of each of the regions, and the control unit 7 determines that the measured refractive index is within the allowable range, a new temperature setting is set for the subsequent wafer W. If it is determined that the allowable range is exceeded, the heating temperature may be set for each subsequent wafer W. By adopting such a configuration, the throughput can be improved as compared with the case where the refractive index is measured for all the wafers.

  The timing of measuring the refractive index is not limited to the timing of the above-described embodiment as long as it is before the formation of the resist film, and may be before the formation of the antireflection film, for example. Accordingly, the optical property detected at the station is transmitted from the station for detecting the optical property of the base film before being carried into the coating and developing device to the coating and developing device, and the transmission is performed. The heating amount of the heating unit 4 may be adjusted based on the obtained optical property data.

  Next, an embodiment of the resist pattern forming apparatus of the present invention will be described. This resist pattern forming apparatus is configured in substantially the same manner as the resist pattern forming apparatus provided with the coating and developing apparatus of the above-described embodiment, and FIG. 13 shows the configuration of the control unit 8. In FIG. 13, each part having the same configuration as the coating and developing apparatus of the above-described embodiment is denoted by the same reference numeral as that used in the above-described embodiment. The exposure apparatus B5 is configured in substantially the same manner as the exposure apparatus B4 in the above-described embodiment, but is configured to be able to perform exposure processing by changing the exposure amount for each of the regions P1 to P5 of the wafer W. ing. Although not shown, the heating unit for performing PEB provided in the resist pattern forming apparatus is configured in substantially the same manner as the heating unit 4 described above. However, the heating unit is different from the heating unit 4 in that the heating process is not performed by applying an offset based on the refractive index and the amount of warpage calculated by the control unit 7.

  The control unit 8 includes a storage unit 81, and different points from the storage unit 75 of the storage unit 81. For example, instead of the correlation between the temperature of the heater 40 of the heating unit 4 and the CD, the exposure amount and the CD The correlation between the warpage amount and the exposure correction amount is stored in place of the correlation between the warpage amount and the temperature correction amount. When the target value of the CD is input to the storage unit 81, the control unit 8 determines the CD of the CD based on the correlation between the CD and the refractive index stored in the storage unit 81 and the correlation between the exposure amount and the CD. A reference value for the exposure amount and a reference value for the refractive index corresponding to the target value are calculated.

  Next, the processing flow of this resist pattern forming apparatus will be described with reference to FIG. First, a target value of CD is input before the wafer W is loaded, and a reference value of exposure amount and a reference value of refractive index corresponding to the target value are calculated. After that, when the wafer W is carried into the apparatus, a series of processes proceeds according to steps T1 to T5 similar to steps S1 to S5 of the coating and developing apparatus. After step T5, the control unit 8 calculates the refractive indexes of the wafers P1 to P5 calculated using the refractive index measurement unit 5, the correlation between the CD stored in the storage unit 81 and the refractive index, and the exposure amount. Based on the correlation with the CD, the offset amount of the exposure amount based on the deviation of the refractive index is calculated, and the offset amount based on the warp amount of each region P1 to P5 is corrected using the warp measurement unit 6. The exposure correction amount to be calculated is calculated, and the exposure amount is determined for each of the regions P1 to P5 based on the estimated offset amount and the exposure correction amount.

  Thereafter, when the wafer W is loaded into the exposure apparatus B5, the exposure apparatus B5 exposes each of the regions P1 to P5 based on the determined exposure amount (step T6). After the exposure, the wafer W is transported through a path similar to the path of the above-described embodiment, undergoes a heating (PEB) process in the heating unit (step T7), and thereafter undergoes a development process (step T8).

  According to this resist pattern forming apparatus, since the exposure amount is controlled based on the optical properties of the regions P1 to P5 in the plane of the wafer W, the base film is the same as the coating and developing apparatus of the above-described embodiment. The variation in the dimension of the resist pattern between the regions P1 to P5 due to the variation in the optical properties can be suppressed, and thus the yield can be suppressed from decreasing. Furthermore, since the exposure amount is controlled based on the amount of warpage of each of the regions P1 to P5, variations in resist pattern dimensions can be further suppressed.

  In the embodiment of the coating, developing apparatus and resist pattern forming apparatus, the refractive index is calculated as the optical property of the base film, and the heating temperature offset and the exposure amount offset are calculated based on the refractive index. However, these offsets may be calculated based on the reflectance and extinction coefficient, which are optical properties obtained by irradiating the base film with light in addition to the refractive index. Further, a film thickness measuring unit for calculating the film thickness of the base film from the reflectance, refractive index or extinction coefficient is provided in the coating and developing apparatus, and based on the film thicknesses of the regions P1 to P5 measured by the film thickness measuring apparatus. In other words, an offset may be applied to the heating temperature and exposure amount of each region. As the film thickness measurement unit, one that measures the film thickness and the refractive index at the same time is used, and the control unit controls the superheat temperature or exposure amount of the PEB based on either the measured film thickness or refractive index. Such a configuration may be adopted.

  In the above embodiment, the timing of measuring the warpage of the wafer W is not limited to the time after the resist film is formed and before the exposure. If the heating temperature of the PEB is offset based on the refractive index, the timing before the PEB may be used. What is necessary is just to be before exposure, when offset is applied according to the exposure amount. Therefore, the warpage may be measured before measuring the refractive index of the underlying film, or the measurement may be performed before the wafer W is carried into the coating and developing apparatus. Moreover, you may arrange | position the curvature measurement unit 6 in the shelf units U1-U3 of process block B2, for example.

  The coating and developing apparatus shown in FIG. 15 is configured in substantially the same manner as the coating and developing apparatus shown in FIG. 1, and is an example in which the arrangement of the warp measuring unit 6 is changed. In this coating and developing apparatus, as shown in the figure, the warp measuring unit 6 is provided between the shelf unit U2 and the shelf unit U3 at a position accessible by the main transport unit A3 (the back of the main transport unit A3). Yes. The warpage measurement unit 6 may be provided on the back surface of the main transport unit A2, and in that case, for example, is provided so as to be laminated on the refractive index measurement unit 5. The refractive index measurement unit 5 may be provided on the back surface of the main transport unit A3, and the warp measurement unit 6 may be provided on the back surface of the main transport unit A2.

  In the coating / developing apparatus shown in FIG. 1, for example, a unit for measuring CD is provided outside the coating / developing apparatus, and the CD and base film formed on the wafer W like the straight line k1 described above by the measuring unit. The correlation with the refractive index is obtained. For example, as shown in FIG. 16, a unit for measuring CD is provided in the coating and developing apparatus (inline), and the correlation is obtained by the measurement unit. It may be a configuration.

  An inspection / measurement block B6 is provided between the carrier block B1 and the processing block B2 of the coating / developing apparatus in FIG. 16, and a conveying means 91 is provided at the center of the inspection / measurement block B6. The configuration of the inspection / measurement block B6 will be described with reference to FIG. Shelf units U6 and U7 are respectively provided on the left and right sides of the transfer means 91. The shelf unit U6 includes, for example, a surface inspection unit 92 for inspecting the surface state of the wafer W and a line width measuring unit 93 from below. They are stacked in order.

  The line width measuring unit 93 irradiates light to the resist pattern formed on the resist film by being developed, and measures the line width of the pattern based on the reflected light. The shelf unit U7 includes, for example, a film thickness measuring unit 94 that measures each film thickness of the wafer W after development processing, a warp measurement unit 6, and a refractive index measurement unit 5 that are stacked in this order from the bottom.

  The transfer unit 91 includes, for example, two tweezers that hold the wafer W, can access each unit of the shelf units U6 and U7, and the transfer stage TRS of the shelf unit U1, and can transfer the wafer W to and from the transfer unit A1. It is configured so that it can be delivered. The number of tweezers may be three or more, and a number that does not hinder the transfer of the wafer W is selected.

  In this coating and developing apparatus, first, for example, a plurality of test wafers W configured to have different optical properties in each of the regions P1 to P5 are carried into the coating and developing apparatus, and these test wafers W are loaded. The controller determines the correlation based on the refractive index of the base film measured during the process of forming the resist pattern and the line width of the pattern measured inline. The determined correlation is stored in the storage unit. Except that the correlation is determined in this way, the control unit of the coating and developing apparatus is configured in substantially the same manner as the control unit 7 of the above-described embodiment.

  A route through which the test wafer W is delivered will be briefly described. The test wafer W carried into the coating / developing apparatus is delivered in the order of delivery means A1 → conveying means 91 → refractive index measuring unit 5 → conveying means 91, and then carried into the processing block B2, where the coating described above is performed. In the same manner as in the developing device, an antireflection film and a resist film are formed. Subsequently, the test wafer W is subjected to an exposure process, and then subjected to a PEB process in a state where each of the heaters 40a to 40e is set to a temperature corresponding to the target value of the CD. Passed to means 91. The test wafer W is transferred in the order of the line width measuring unit 93 → transfer means 91 → delivery means A1, and returned to the carrier block B1.

  When such a transfer is completed for all the test wafers W, the control unit controls each of the regions P1 to P5 of the wafer W based on the line width and refractive index measured from the line width measuring unit 93 and the refractive index measuring unit 5, respectively. Each time, the correlation between the refractive index and the CD corresponding to the straight line k1 in the graph of the embodiment described above is calculated and determined.

  After the correlation is determined, the above-described wafer W for the product is loaded into the coating and developing apparatus, and the wafer W is transferred from the transfer means A1 → the transfer means 91 → the refractive index measurement unit 5 → the transfer means 91 → After being transported in the order of the warp measurement unit 6 → the transport means 91, it is transferred to the processing block B 2 and subjected to various film formation processing and exposure processing in the same manner as the test wafer W described above. Thereafter, similarly to the above-described embodiment, the target value of CD stored in the storage unit in advance, the correlation between the heater temperature and CD, and the correlation between the refractive index stored by measurement of the test wafer and CD. Based on the above, the PEB process is performed in an offset state for each of the regions P1 to P5 of the wafer W.

  After the PEB, the wafer W is subjected to development processing. For example, some of the wafers W are returned to the carrier block B1 in the same manner as the test wafer W. → Surface inspection unit 92 → Transport means 91 → Transfer to film thickness measurement unit 94, and after various film thicknesses formed on wafer W and the surface condition of wafer W are inspected, they are returned to carrier block B1.

  The coating / developing apparatus shown in FIG. 16 is provided with various inspection units and measuring devices in an integrated manner in the inspection / measurement block B6. Therefore, the convenience of maintenance in each unit of the inspection / measurement block B6 is improved. Can be planned. In the above-described embodiment, for example, the wafer W returned to the carrier C of the carrier block B1 from the processing block B2 after receiving a series of pattern formation processes is again returned to the inspection / measurement block B6 via the transfer means A1 and the transfer means 91. It is possible to carry out various inspections. In that case, even if the subsequent wafer W is transferred between the units in the processing block B2 and the interface block B3, the transfer effect of the blocks B2 and B3 does not reach the transfer means A1 and the transfer means 91. In other words, since a predetermined wafer W can be transferred simultaneously between the blocks B1 and B6 and between the blocks B2 and B3, there is an advantage that a decrease in throughput can be suppressed. It should be noted that only the inspection / measurement block B6 and the carrier block B1 may be operated while the processing block B2 is turned off, and the wafer W may be transferred to various units in the various blocks B6 for inspection. Can save power compared to turning on the power to all blocks of the coating and developing apparatus.

  As described above, only the first wafer W of the lot is measured for the refractive index and the heater temperature is set based on the refractive index, and the wafer W in the subsequent lot is set at the same set temperature. Although heating may be performed, for example, a predetermined plurality of wafers are periodically extracted in a lot, and a refractive index is measured on each of the extracted wafers W, so-called sampling inspection is performed, and the sampling inspection is performed. You may make it set the temperature of heater 40a-40e based on the test result every time.

It is a top view which shows an example of the application | coating and developing apparatus of this invention. FIG. 2 is an overall perspective view showing the coating and developing apparatus. It is a perspective view which shows the interface block of the said coating and developing apparatus. It is a block diagram of the heating unit provided in the said coating and developing apparatus. It is a block diagram of the heater provided in the hot plate of the said heating unit, and the said hot plate. It is explanatory drawing which shows each area | region of the wafer mounted in the said hot platen. It is a vertical side view of the refractive index measuring unit provided in the coating and developing apparatus. It is a block diagram of the wafer curvature measuring unit provided in the coating and developing apparatus. It is a block diagram of the control part provided in the said application | coating and image development apparatus. It is the graph which showed the correlation with the line width of the resist pattern memorize | stored in the memory | storage part provided in the said control part, the refractive index of a base film, and the temperature of the said heater. It is the flowchart which showed the process in which a resist pattern is formed in a wafer by the said application | coating and image development apparatus. It is explanatory drawing which showed a mode that the amount of offsets was determined. It is the block diagram which showed the structure of the control part provided in an example of the resist pattern formation apparatus of this invention. 4 is a flowchart showing a process of forming a resist pattern on a wafer by the resist pattern forming apparatus. It is a top view which shows another example of the application | coating and developing apparatus of this invention. It is a top view which shows another example of the application | coating and developing apparatus of this invention. It is explanatory drawing which showed the structure of the test | inspection / measurement block of the said coating and developing apparatus.

Explanation of symbols

W Semiconductor wafer 4 Heating unit 40a to 40e Heater 43 Heat plate 5 Refractive index measurement unit 6 Warpage measurement unit 7 Control unit 74 Storage unit

Claims (11)

In a coating and developing apparatus for applying a resist solution to a substrate to be processed having a base film formed on the surface of the substrate and developing the substrate to be processed after exposure to form a resist pattern,
A heating unit capable of independently controlling heating of a plurality of heating regions by a plurality of heaters, a heating unit for heating a substrate to be processed before development after exposure by the heating plate;
An optical measurement unit that measures the optical properties of each region by irradiating light to the region corresponding to each heating region of the substrate to be processed before applying the resist solution;
A storage unit that stores the correlation between the optical properties of the base film of the substrate to be processed, the heating temperature of the heater, and the line width of the resist pattern, which are obtained in advance,
The heating temperature of the heater is calculated for each heating region based on the optical property of the base film of the substrate to be processed measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage unit. Control means for controlling the temperature of each heating region of the hot plate based on the calculated heating temperature;
A coating and developing apparatus comprising:   2. The coating and developing apparatus according to claim 1, wherein the optical property includes any one of a reflectance, a refractive index, and an extinction coefficient.   The apparatus further includes a warp measurement unit that measures the warp amount of each measurement region of the substrate to be processed, and the control unit corrects the calculated heating temperature of the hot plate in each heating region based on the measured warp amount. The coating and developing apparatus according to claim 1, wherein the temperature of each heating region of the hot plate is controlled based on the correction value and the heating temperature. Resist pattern forming apparatus for applying a resist solution to a substrate to be processed having a base film formed on the surface of the substrate, then exposing the substrate to be processed, and further developing the substrate to be processed after the exposure to form a resist pattern In
An exposure apparatus capable of setting an exposure amount for each area obtained by dividing the surface of the substrate to be processed into a plurality of areas;
An optical measurement unit that measures the optical properties of each region by irradiating light into regions corresponding to the plurality of regions of the substrate to be processed before resist film formation;
A storage unit in which the correlation between optical properties, exposure amount, and line width of the resist pattern, which are obtained in advance, is stored;
The exposure amount is calculated for each region based on the optical properties measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage unit, and the exposure based on the calculated exposure amount A control unit for controlling the exposure amount of the apparatus;
A resist pattern apparatus comprising:   The resist pattern forming apparatus according to claim 4, wherein the optical property includes any one of a reflectance, a refractive index, and an extinction coefficient.   An exposure correction amount that further includes a warp measurement unit that measures a warp amount of each measurement region of the substrate to be processed, and wherein the control unit corrects an exposure amount of the exposure apparatus in each exposure region based on the measured warp amount. 6. The resist pattern forming apparatus according to claim 4, wherein the exposure amount of each exposure region is controlled based on the exposure correction amount and the calculated exposure amount. In a coating and developing method for forming a resist pattern using a hot plate that can independently heat control a plurality of heating regions by a plurality of heaters, after the substrate to be exposed is exposed,
Irradiating the region corresponding to each heating region of the substrate to be processed with light, and measuring the optical properties of each region;
A step of forming a resist film by applying a resist solution to the surface of the base film after the optical property measurement;
Exposing a substrate to be processed on which a resist film is formed;
Data acquired in advance regarding the correlation between the optical properties obtained by irradiating the base film of the substrate to be processed, the heating temperature of the heater and the line width of the resist pattern, and the substrate to be processed measured in the step A step of calculating the heating temperature for each heating region based on the optical properties and the target value of the line width of the resist pattern;
A step of controlling heating of each heating region based on the calculated heating temperature;
Developing a heated substrate to be processed;
A method of forming a resist pattern, comprising: Measuring the amount of warpage of each measurement region of the substrate to be processed;
A step of calculating a correction temperature for correcting the calculated heating temperature based on the measured amount of warpage,
8. The method of forming a resist pattern according to claim 7, wherein the step of heating the substrate to be processed is performed based on the heating temperature and the correction temperature. Irradiating each of a plurality of regions within the surface of the base film of the substrate to be processed to measure the optical properties of each region;
A step of forming a resist film by applying a resist solution to the surface of the base film after the optical property measurement;
Data acquired in advance about the correlation between the optical properties obtained by irradiating light to the underlayer of the substrate to be processed, the exposure amount of the exposure apparatus, and the line width of the resist pattern,
A step of calculating an exposure amount for each region based on the optical properties of the substrate to be processed measured in the step and a target value of the line width of the resist pattern;
Exposing the substrate to be processed with an exposure amount corresponding to the calculated exposure amount;
Heating the exposed substrate; and
Developing a heated substrate to be processed;
A method for forming a resist pattern, comprising: Measuring the amount of warpage of each measurement region of the substrate to be processed;
A step of calculating an exposure correction amount for correcting the calculated exposure amount based on the measured amount of warpage, and
10. The method of forming a resist pattern according to claim 9, wherein the step of exposing the substrate to be processed is performed based on the exposure amount and the exposure correction amount. Used in an apparatus for forming a resist pattern by applying a resist solution to a substrate to be processed having a base film formed on the surface of the substrate,
A storage medium storing a computer program that runs on a computer,
A storage medium characterized in that the computer program includes steps so as to implement the coating, developing method or resist pattern forming method according to any one of claims 7 to 10.

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