JP2796404B2 - Exposure method and apparatus, and thin film production control method and apparatus using the same - Google Patents
Exposure method and apparatus, and thin film production control method and apparatus using the sameInfo
- Publication number
- JP2796404B2 JP2796404B2 JP2096443A JP9644390A JP2796404B2 JP 2796404 B2 JP2796404 B2 JP 2796404B2 JP 2096443 A JP2096443 A JP 2096443A JP 9644390 A JP9644390 A JP 9644390A JP 2796404 B2 JP2796404 B2 JP 2796404B2
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- JP
- Japan
- Prior art keywords
- exposure
- thin film
- light
- photoresist
- optical characteristics
- Prior art date
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体デバイス等の製造に係り、特に半導
体デバイスの露光工程における露光方法及びその装置な
らびにそれらを用いた薄膜生産制御方法及びその装置に
関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of semiconductor devices and the like, and more particularly, to an exposure method and apparatus in an exposure step of a semiconductor device, and a thin film production control method and apparatus using the same. It is about.
半導体の高集積化が進むに従い、パターン寸法は微細
化し、また素子構造も立体化し製造工程がますます複雑
化してきている。このため、各製造工程で用いられる装
置の製造プロセス条件安定化には、これまで以上に十分
な注意を払う必要がある。As semiconductors become more highly integrated, pattern dimensions become finer and device structures become three-dimensional, and the manufacturing process becomes more and more complicated. For this reason, it is necessary to pay more attention to stabilizing the manufacturing process conditions of the device used in each manufacturing process than ever.
例えば、投影露光装置でレチクル上のパターンをウエ
ハに転写露光する際、比較的波長バンド幅の狭い単一波
長の露光光を用いるため、フォトレジスト膜内72や光透
過性を有する下地層形成膜74が存在する場合、第２図
（ａ）のように露光光71がその中で多重反射し、光の相
互干渉が起こりフォトレジスト膜72内の深さ方向で光の
強度が変化する。このため、深さ方向で露光エネルギー
に差が生じ、現像するとフォトレジストの断面は、第２
図（ｂ）のように深さ方向で凸凹になる。また、各種製
造装置にプロセス条件変動があると、フォトレジスト膜
厚ｔや光透過性を有する下地層74の形成状態が変化し、
第３図に示すように同じ露光エネルギーでフォトレジス
トを露光した場合下地層73の最上層に接するフォトレジ
ストの幅Ｗが変化してパターン寸法が変化する。従っ
て、このパターン寸法Ｗを安定にするには、フォトレジ
スト膜厚ｔの変動及び下地層74の形成状態に対応した最
適露光エネルギーを設定する必要がある。For example, when a pattern on a reticle is transferred and exposed on a wafer by a projection exposure apparatus, exposure light of a single wavelength having a relatively narrow wavelength bandwidth is used. In the case where 74 exists, as shown in FIG. 2 (a), the exposure light 71 undergoes multiple reflections therein, causing mutual interference of light and changing the light intensity in the depth direction in the photoresist film 72. For this reason, a difference occurs in the exposure energy in the depth direction.
It becomes uneven in the depth direction as shown in FIG. In addition, when there is a change in process conditions in various manufacturing apparatuses, the state of formation of the photoresist film thickness t and the underlayer 74 having optical transparency changes,
As shown in FIG. 3, when the photoresist is exposed with the same exposure energy, the width W of the photoresist in contact with the uppermost layer of the underlayer 73 changes and the pattern size changes. Therefore, in order to stabilize the pattern dimension W, it is necessary to set the optimum exposure energy corresponding to the variation of the photoresist film thickness t and the state of formation of the underlayer 74.
また、フォトレジスト塗布装置の塗布やベーク条件の
変動によりフォトレジストの光学特性や膜厚が変化する
と、ウエハ下地層の形成状態や露光，現像条件が同じ場
合でもパターン寸法が変化する。従って、このフォトレ
ジスト塗布装置でもフォトレジスト膜厚や光学特性の変
動要因である塗布やベーク条件の変動を常にモニタし、
これを一定に保つように制御する必要がある。Also, when the optical characteristics and the film thickness of the photoresist change due to a change in the application of the photoresist coating apparatus and the baking conditions, the pattern dimensions change even when the formation state of the wafer underlayer and the exposure and development conditions are the same. Therefore, even with this photoresist coating apparatus, the fluctuation of the coating and baking conditions, which are the causes of the fluctuation of the photoresist film thickness and the optical characteristics, is constantly monitored.
It must be controlled to keep this constant.
一方、第４図に示す露光工程の前後の工程の成膜やエ
ッチングなどの薄膜生成・処理工程においても、生成・
処理されるウエハの大口径化、膜の薄膜化のため、生成
・処理される薄膜の厚さや光学特性がわずかな製造プロ
セスを条件変動により変化する。従って薄膜生成・処理
装置では生成・処理される薄膜の厚さや光学特性を常に
モニタし、これを一定に保つように製造プロセス条件を
制御する必要がある。On the other hand, in the thin film generation and processing steps such as film formation and etching before and after the exposure step shown in FIG.
In order to increase the diameter of a wafer to be processed and to reduce the thickness of the film, the thickness and optical characteristics of a thin film to be formed and processed vary slightly depending on conditions in a small manufacturing process. Therefore, it is necessary for a thin film forming and processing apparatus to constantly monitor the thickness and optical characteristics of a thin film to be formed and processed, and to control the manufacturing process conditions so as to keep them constant.
このように、各構造工程で用いられる装置に製造プロ
セス条件変動が存在する中で、例えば露光工程において
はパターン寸法を一定に保つ方法として、従来は試行的
に１枚ないし数枚のウエハを露光、現像して、測定器で
パターン寸法を測定し、その結果によって露光エネルギ
ーの良否を判定し、照明光学形のシャッタ開閉時間等に
フィードバックするいわゆる先行作業が行われてきた。As described above, in the presence of fluctuations in manufacturing process conditions in an apparatus used in each of the structural steps, for example, one or several wafers are conventionally tested on a trial basis as a method of keeping a pattern dimension constant in an exposure step. A so-called preceding operation has been performed in which the pattern dimension is measured by a measuring instrument, and the quality of the exposure energy is determined based on the result, and the result is fed back to the shutter opening / closing time of the illumination optical type.
しかし、ASICなどの多品種少量生産の製品製造におい
ては、品種交換時に必ずこの先行作業を行う必要があ
り、作業回数が増え、露光装置の稼働率低下の主たる原
因となってきた。また、高集積化が進むに従い、このよ
うな先行作業によりプロセス条件変動の補正を行う方法
では、十分な制度が得られなくなってきた。However, in the production of ASICs and other products for small-quantity production of many kinds, it is necessary to always perform this precedent work at the time of kind exchange, which increases the number of operations and is a major cause of a decrease in the operation rate of the exposure apparatus. In addition, as the degree of integration increases, a sufficient system cannot be obtained by the method of correcting the process condition variation by such preceding work.
そこで、この先行作業をなくすため、従来特開昭63−
31116号公報に記載のように、フォトレジスト膜厚とパ
ターン寸法の関係、露光エネルギとパターン寸法の関係
とが明らかになっているものと仮定して、縮小投影露光
装置にフォトレジスト膜厚測定装置を内蔵させ、露光し
ようとするウエハ上のフォトレジスト膜厚を測定しその
結果を露光エネルギに反映させることによりパターン寸
法のばらつきを低減し安定化を図る方法が考案されてい
た。Therefore, in order to eliminate this precedent work, conventionally,
As described in JP-A-31116, assuming that the relationship between the photoresist film thickness and the pattern dimension, the relationship between the exposure energy and the pattern dimension have been clarified, a photoresist film thickness measuring apparatus is provided in the reduced projection exposure apparatus. A method has been devised in which the thickness of a photoresist on a wafer to be exposed is measured, and the result is reflected in exposure energy to reduce variations in pattern dimensions and stabilize.
また、薄膜生成・処理工程においても、先行するウエ
ハにより薄膜生成・処理装置で生成・処理された膜厚を
測定し、この値をもと製造プロセス条件を設定してい
た。Also, in the thin film generation / processing step, the film thickness generated and processed by the thin film generation / processing apparatus using the preceding wafer was measured, and the manufacturing process conditions were set based on this value.
上記従来技術のうち、パターン寸法安定化について
は、塗布されたフォトレジスト膜厚のバラツキを測定し
て、最適露光エネルギーを求め、パターン寸法を制御す
ることで行っている。しかし、半導体の高集積化に伴
い、薄膜生成・処理工程での生成・処理条件変動による
下地層の形成状態のばらつきやフォトレジスト塗布工程
での塗布条件，ベーク条件反動によるフォトレジストの
光学特性のバラツキ等製造プロセス条件にばらつきの影
響が無視できなくなってきた。Among the above prior arts, pattern dimension stabilization is performed by measuring the variation in the thickness of the applied photoresist, obtaining the optimum exposure energy, and controlling the pattern dimension. However, as semiconductors become more highly integrated, variations in the formation conditions of the underlayer due to variations in the formation and processing conditions in the thin film generation and processing steps, and the application of the photoresist in the photoresist coating process and the baking conditions, which cause the optical characteristics of the photoresist to react, The influence of variations in manufacturing process conditions, such as variations, cannot be ignored.
また、上記従来技術の薄膜生成・処理工程において、
現状の膜厚測定装置ではその前の工程で作成された下地
層の形成状態のばらつきの影響をまともに受け、膜厚測
定値に誤差が生じるため、この膜厚測定値より最適製造
プロセス条件を正確に設定することが困難となってき
た。In addition, in the above-mentioned conventional thin film generation and processing steps,
The current film thickness measurement device is directly affected by the variation in the state of formation of the underlayer formed in the previous process, and an error occurs in the film thickness measurement value. It has become difficult to set accurately.
本発明の目的は、これら各種の製造プロセス条件設定
のばらつきを低減し、薄膜生成、処理を常に安定に保つ
ための薄膜生産制御方法及びその方式を提供することに
ある。An object of the present invention is to provide a thin film production control method and method for reducing the variation in setting of these various manufacturing process conditions and constantly keeping the thin film generation and processing stable.
また本発明の目的は、これら各種のプロセス上のバラ
ツキにもかかわらず、パターン寸法を常に安定に保つた
めの露光方法及びその方式を提供することにある。It is another object of the present invention to provide an exposure method and a method for always keeping the pattern dimensions stable despite these various process variations.
上記目的は、所望の薄膜層生成・処理前にその下地層
の光学特性を予め測定し、薄膜層の生成・処理中あるい
は生成・処理後の光学特性測定値に補正を加えることに
より、正確に製造プロセス条件を制御することで達成さ
れる。The above object is to accurately measure the optical characteristics of the underlayer before forming and processing a desired thin film layer and to correct the measured optical characteristics during or after the formation and processing of the thin film layer, thereby achieving accurate measurement. Achieved by controlling manufacturing process conditions.
つまり、薄膜生成・処理中に光学特性のうち、複素屈
折率が変化する光透過性を有する薄膜であるフォトレジ
ストにパターンを転写露光する露光工程を例にとると、
要求パターン寸法を得るために最適な露光エネルギー
を、フォトレジストを塗布する前の下地層の光学特性と
フォトレジストを塗布した後のウエハ露光による光学特
性の変化からフォトレジストの光学特性の変化の様子を
求めることにより達成される。In other words, taking as an example an exposure step of transferring and exposing a pattern to a photoresist that is a thin film having optical transparency in which a complex refractive index changes among optical characteristics during thin film generation and processing,
The optimum exposure energy to obtain the required pattern size is determined by the change in the optical characteristics of the photoresist based on the optical characteristics of the underlayer before the photoresist is applied and the changes in the optical characteristics due to wafer exposure after the photoresist is applied. Is achieved by seeking
フォトレジストは、露光されるに従って第５図
（ａ），（ｂ）に示すように光吸収係数（κ）や屈折率
（ｎ）などの光学特性が変化する。この特性の時間的変
化の様子は、露光工程の前の工程での製造装置の製造プ
ロセス条件変動による下地層の反射率の変化などのため
に異なるが、ウエハへの転写露光が終了したときのフォ
トレジストの光吸収係数，屈折率などの光学的特性はほ
ぼ一定である。第５図において製造プロセス条件変動の
影響で最適露光終了時間がT1,T2,T3と変動するが、露光
終了状態での光吸収係数κ1,屈折率n1はほぼ一定であ
る。そこで、この点に着目し、パターン露光工程に先立
ちフォトレジストが塗布されたウエハの一部を仮露光
し、フォトレジストの光吸収係数（κ），屈折率（ｎ）
などの光学特性の仮露光過程における時間的変化の様子
を測定すればよい。しかし、これらの値は直接測定でき
ないので、フォトレジストを塗布する前の下地層の光学
特性の測定結果によりフォトレジストを塗布した後のウ
エハの総合反射率Ｒの変化より求めたフォトレジストの
複素屈折率Ｎ（Ｎ＝ｎ−ｉ・κ）を補正し、換算するこ
とにより求めている。そして、これをもとにウエハ上の
フォトレジストが要求パターン寸法精度を満たすために
必要な露光エネルギＴまたはフォトレジスト塗布条件も
しくはフォトレジストのベーク条件を求め、実際のパタ
ーン転写を行なう投影露光装置の照明系またはフォトレ
ジスト塗布装置等にフィードバックし、パターンの寸法
制御の安定化を図ることができる。As shown in FIGS. 5A and 5B, the optical characteristics of the photoresist, such as the light absorption coefficient (κ) and the refractive index (n), change as the photoresist is exposed. The manner in which this characteristic changes over time differs due to a change in the reflectance of the underlying layer due to a change in the manufacturing process conditions of the manufacturing apparatus in a step before the exposure step, but when transfer exposure to the wafer is completed. Optical characteristics such as light absorption coefficient and refractive index of the photoresist are almost constant. In FIG. 5, the optimum exposure end time fluctuates to T1, T2, and T3 due to the influence of the manufacturing process condition fluctuation, but the light absorption coefficient κ1 and the refractive index n1 in the exposure end state are almost constant. Therefore, paying attention to this point, prior to the pattern exposure step, a part of the wafer coated with the photoresist is temporarily exposed, and the light absorption coefficient (κ) and the refractive index (n) of the photoresist are determined.
What is necessary is just to measure the state of the temporal change in the optical characteristics such as the optical exposure process. However, since these values cannot be directly measured, the complex refraction of the photoresist obtained from the change in the total reflectance R of the wafer after the photoresist is applied based on the measurement result of the optical characteristics of the underlayer before the photoresist is applied. It is determined by correcting and converting the rate N (N = ni-κ). Then, based on this, the exposure energy T or the photoresist coating condition or the photoresist baking condition required for the photoresist on the wafer to satisfy the required pattern dimensional accuracy is obtained, and a projection exposure apparatus for actual pattern transfer is obtained. Feedback to an illumination system, a photoresist coating device, or the like can stabilize pattern dimensional control.
また同様にフォトレジスト塗布前の下地層の分光透過
スペクトルとフォトレジスト塗布後のウエハの露光によ
る分光透過スペクトルの時間的変化を測定して、これら
の結果よりフォトレジストの分光透過スペクトルの時間
的変化を算出してウエハ上のフォトレジストが要求パタ
ーン寸法精度を満たすために必要な露光エネルギＴまた
はフォトレジスト条件もしくはフォトレジストのベーク
条件を求める方法もある。Similarly, the temporal change of the spectral transmission spectrum of the underlayer before photoresist application and the spectral transmission spectrum due to exposure of the wafer after photoresist application are measured, and the temporal change of the spectral transmission spectrum of the photoresist is obtained from these results. There is also a method of calculating the exposure energy T or the photoresist condition or the photoresist baking condition required for the photoresist on the wafer to satisfy the required pattern dimensional accuracy by calculating the following formula.
あるいは、光透過特性を有する薄膜を成膜する薄膜成
膜工程を例にとると、要求成膜膜厚を得るために最適な
成膜条件を、成膜する前の下地層の光学特性と成膜中の
ウエハの光学特性の変化から成膜される膜の光学特性の
変化の様子を求めることにより達成される。Alternatively, in the case of a thin film forming process for forming a thin film having light transmission characteristics, for example, the optimum film forming conditions for obtaining a required film thickness are determined by adjusting the optical characteristics of the underlayer before film formation. This is achieved by obtaining the state of the change in the optical characteristics of the film to be formed from the change in the optical characteristics of the wafer in the film.
ウエハに膜が成膜されると、成膜されるに従って第６
図のようにウエハからの反射率Rdは変化する。この反射
率の時間的変化の様子は、成膜工程の前の工程での製造
装置の製造プロセス条件変動のため異なるため、ウエハ
の反射率変化から成膜時間を制御するとこの時間がT0,T
1と変化する。ここで成膜する前の下地層の光学特性が
測定されるとウエハからの反射率Rdと成膜膜厚ｄの関係
は第７図のようになり、成膜中のウエハの反射率変化を
成膜膜厚変化に換算すれば、第６図のウエハからの反射
率と成膜時間の関係は、成膜膜厚と成膜時間の関係に置
き換えることができる。従ってこの関係を用いると成膜
中の膜圧をリアルタイムで求めることができる。そこ
で、これより求められる成膜速度や成膜膜厚を成膜装置
のプロセス条件変動量に変換し制御すれば、成膜装置を
安定化することができる。When a film is formed on the wafer, the sixth
As shown in the figure, the reflectance Rd from the wafer changes. Since the state of the temporal change of the reflectivity is different due to a change in the manufacturing process conditions of the manufacturing apparatus in the step before the film forming step, when the film forming time is controlled based on the change in the reflectivity of the wafer, the time T0, T
It changes to 1. When the optical characteristics of the underlayer before film formation are measured, the relationship between the reflectance Rd from the wafer and the film thickness d is as shown in FIG. In terms of the change in the film thickness, the relationship between the reflectance from the wafer and the film formation time in FIG. 6 can be replaced with the relationship between the film thickness and the film formation time. Therefore, using this relationship, the film pressure during film formation can be obtained in real time. Therefore, the film forming apparatus can be stabilized by converting the film forming rate and the film thickness to be obtained into the process condition fluctuation amount of the film forming apparatus.
このように、所望の薄膜厚の生成・処理する前に予め
光学特性を測定し、生成・処理中もしくは生成・処理後
の光学特性測定値に補正を加えることにより、正確に製
造プロセス条件を制御し、安定化を図ることができる。As described above, the optical characteristics are measured in advance before the desired thin film thickness is generated / processed, and the optical property measurement values during or after the generation / processing are corrected, thereby accurately controlling the manufacturing process conditions. And stabilization can be achieved.
薄膜生成・処理工程の薄膜の光学特性を反射率を例に
とり説明する。薄膜生成・処理工程の薄膜の光学特性
は、ウエハ上に薄膜を生成・処理する前と、ウエハ上に
薄膜を生成・処理中または生成・処理後にウエハ上の薄
膜を生成・処理する前に測定した位置と同じ位置で、総
合反射率Ｒを測定することにより行う。予め与えられて
いるパラメータ例えば下地最上層の複素屈折率ｎ′等を
もとに、下地層の反射率Ｒ′の測定結果を用いて、総合
反射率Ｒから生成・処理される薄膜の光学特性（薄膜の
膜厚ｄ、吸収係数κ、屈折率ｎ）の変化を解析すること
により、薄膜生成・処理による薄膜の光学特性の変化が
求められ、これからプロセス条件変動量が正確に求めら
れる。The optical characteristics of the thin film in the thin film forming / processing step will be described with reference to the reflectance. The optical properties of thin films during thin film generation and processing are measured before thin films are formed and processed on the wafer and before and after thin films are formed and processed on wafers. The measurement is performed by measuring the total reflectance R at the same position as the position where the measurement is performed. The optical characteristics of the thin film generated and processed from the total reflectance R by using a measurement result of the reflectance R 'of the underlayer based on a parameter given in advance, for example, the complex refractive index n' of the underlayer. By analyzing changes in (thickness d of the thin film, absorption coefficient κ, refractive index n), a change in the optical characteristics of the thin film due to the formation and processing of the thin film is obtained, and from this, the amount of change in the process condition is accurately obtained.
「波動光学」（久保田 広著 岩波書店）によれば、
光透過性を有する薄膜からの総合反射率Ｒは Ｒ＝ｆ（N,n′,R′,I2,d） Ｎ ：生成・処理される薄膜の複素屈折率Ｎ＝ｎ−
ｉ・κ ｎ ：生成・処理される薄膜の屈折率 κ ：生成・処理される薄膜の吸収係数 ｎ′：生成・処理される薄膜下地最上層の複素屈折
率 Ｒ′：生成・処理される薄膜下地層の反射率 I2 ：照射照度 ｄ ：生成・処理される薄膜膜厚 で与えられるので、ｎ′,I2を予め測定すれば、薄膜生
成・処理前にＲ′を測定し、総合反射率Ｒの時間的変化
測定値を補正することで、生成・処理される薄膜の光学
特性の時間的変化を正確に求めることができる。According to "Wave Optics" (Hiroshi Kubota, Iwanami Shoten)
The total reflectance R from the light-transmitting thin film is: R = f (N, n ', R', I2, d) N: The complex refractive index N = n-
i · κ n: Refractive index of the thin film to be generated and processed κ: Absorption coefficient of the thin film to be generated and processed n ′: Complex refractive index of the uppermost layer of the thin film to be generated and processed R ′: Thin film to be generated and processed Underlayer reflectivity I2: Irradiation illuminance d: Generated / processed thin film thickness Given that n 'and I2 are measured in advance, R' is measured before thin film generation / process, and total reflectance R By correcting the measured value of the temporal change of the thin film, the temporal change of the optical characteristics of the thin film to be formed and processed can be accurately obtained.
例えば、フォトレジストの露光光を照射したときの膜
厚は露光前後で変化しないので、（１）式よりｎ′,I2,
dを予め測定すれば、フォトレジスト塗布前にＲ′を測
定し、総合発射率Ｒの時間的変化測定値を補正すること
でフォトレジストの複素屈折率Ｎ（Ｎ＝ｎ−ｉ・κ）の
時間的変化を下地層の反射率が製造プロセス条件のばら
つきにより変化しても正確に求めることができる。そこ
で、要求パターン寸法が得られるフォトレジストの複素
屈折率N1＝n1−ｉ・κ１となる露光エネルギE1＝I2（照
度）×T2（時間）を求めれば、そのエネルギが最適露光
エネルギである。For example, since the thickness of the photoresist when exposed to exposure light does not change before and after exposure, n ', I2,
If d is measured in advance, R ′ is measured before the photoresist is applied, and the measured value of the temporal change of the total emission rate R is corrected to obtain the complex refractive index N (N = ni · κ) of the photoresist. The temporal change can be accurately obtained even if the reflectance of the underlayer changes due to variations in the manufacturing process conditions. Therefore, if the exposure energy E1 = I2 (illuminance) × T2 (time) that satisfies the complex refractive index N1 = n1−i · κ1 of the photoresist that can obtain the required pattern size is obtained, the energy is the optimum exposure energy.
また、フォトレジストの光学特性は第５図（ａ），
（ｂ）に示すように、最終的には、既知の値で、ある一
定値κ∞,n∞に収束する。従って、（１）式の関係（但
しＮ∞＝ｎ∞−ｉ・κ∞は既知である。）に基づいてこ
の状態でのレジスト膜厚ｄの変化に対する反射率Ｒを測
定すれば、第15図に示す関係を用いて、その反射率から
レジストの膜厚ｄが前記したように予め測定せずに下地
層の反射率が製造プロセス条件のばらつきにより変化し
ても正確に求められる。The optical characteristics of the photoresist are shown in FIG.
As shown in (b), finally, it converges to a certain constant value κ∞, n∞ with a known value. Therefore, if the reflectance R with respect to the change of the resist film thickness d in this state is measured based on the relationship of the equation (1) (where N∞ = n∞−i · κ∞ is known), the fifteenth is obtained. Using the relationship shown in the figure, the reflectance d can be accurately obtained from the reflectance even if the reflectance of the underlayer changes due to variations in manufacturing process conditions without previously measuring the resist film thickness d as described above.
また、一般にフォトレジストの露光前後の分光透過ス
ペクトルは第16図のような特性があるが、下地層の反射
率が製造プロセス条件のばらつきにより変化するとこの
曲線のカーブが変化する。そこでフォトレジウト塗布前
の下地層の分光透過スペクトルを予め測定し、露光過程
における分光透過スペクトルの測定値を補正するとフォ
トレジスとの分光透過スペクトルの時間的変化が求めら
れ、露光終了時の分光透過スペクトルの基準パターンデ
ータを予め記憶しておき、測定された露光終了時の分光
透過スペクトルの基準パターンデータとを比較し、一致
するまでの時間を測定すれば、最適露光エネルギＥ（Ｉ
（照度）×Ｔ（時間））が正確に求められる。In general, the spectral transmission spectrum of the photoresist before and after exposure has characteristics as shown in FIG. 16, but when the reflectance of the underlayer changes due to the variation in manufacturing process conditions, this curve changes. Therefore, the spectral transmission spectrum of the underlayer before photoresist coating is measured in advance, and the measured value of the spectral transmission spectrum during the exposure process is corrected to obtain a temporal change in the spectral transmission spectrum with the photoresist. Is stored in advance, and the measured reference pattern data of the spectral transmission spectrum at the end of exposure is compared with the reference pattern data. If the time until the coincidence is measured, the optimum exposure energy E (I
(Illuminance) × T (time)) is accurately obtained.
そしてここで求めた最適露光エネルギを投影露光装置
の露光照明系のシャッタ開閉回路にフィードバックする
ことにより、本露光に入りパターンを転写する際に、下
地層の反射率が製造プロセス条件のばらつきにより変化
しても正確に安定なパターン寸法制御が可能となる。By feeding back the optimum exposure energy obtained here to the shutter opening / closing circuit of the exposure illumination system of the projection exposure apparatus, the reflectivity of the underlying layer changes due to variations in manufacturing process conditions when a pattern is transferred in the main exposure. However, accurate and stable pattern dimension control becomes possible.
また、フォトレジスト塗布工程においてプロセス条件
の不安定性により、ウエハ毎，あるいはロット毎にフォ
トレジストの膜厚や初期光吸収係数などがばらつくこと
がわかっているが、フォトレジスト塗布過程を終了した
ウエハについて、上記方法でウエハのスクライブライン
等の上のフォトレジストを部分露光することにより光学
特性の変化測定値を補正し、この結果が一定となるよう
にスピンステップやベークステップにフィードバックす
れば、フォトレジスト塗布工程を安定化させることがで
きる。そしてこれにより、プロセス条件変動によるパタ
ーン寸法のバラツキをさらに低減することができる。It is also known that the photoresist film thickness and initial light absorption coefficient vary from wafer to wafer or from lot to lot due to instability of process conditions in the photoresist coating process. By partially exposing the photoresist on the scribe line or the like of the wafer by the method described above, the measured value of the change in the optical characteristics is corrected, and the result is fed back to the spin step or the bake step so that the result becomes constant. The application step can be stabilized. As a result, it is possible to further reduce variations in pattern dimensions due to variations in process conditions.
一方、生成・処理される薄膜が、成膜装置、エッチン
グ装置、フォトレジスト以外の薄膜塗布装置で生成・処
理される薄膜の場合、生成・処理中に薄膜の複素屈折率
Ｎ（Ｎ＝ｎ−ｉ・κ）は変化しないので、（１）式よ
り、ｎ′,I2,Nを予め測定すれば、薄膜生成・処理前の
ウエハの反射率Ｒ′を測定し、生成・処理中の総合反射
率Ｒの時間的変化測定値を補正することで、生成・処理
薄膜の膜厚ｄの時間的変化を求めることができる。そこ
で、ここで求めた膜厚を一定にするように生成・処理装
置の製造プロセス条件をフィードバック制御すれば、薄
膜を生成・処理する前にウエハの反射率が製造プロセス
条件のばらつきにより変化しても生成・処理装置を安定
化させることができる。On the other hand, when the thin film to be generated and processed is a thin film generated and processed by a thin film coating apparatus other than a film forming apparatus, an etching apparatus, and a photoresist, the complex refractive index N (N = n− (i.kappa.) does not change. Therefore, if n ', I2, and N are measured in advance from equation (1), the reflectance R' of the wafer before the thin film is formed and processed is measured, and the total reflection during the formation and processing is performed. By correcting the measured value of the temporal change in the rate R, the temporal change in the film thickness d of the produced / processed thin film can be obtained. Therefore, if the production process conditions of the production / processing apparatus are feedback-controlled so that the film thickness obtained here is constant, the reflectivity of the wafer changes due to the variation in the production process conditions before the thin film is produced / processed. Can stabilize the generating / processing device.
上記光学特性測定方法として、透過率、偏光特性等も
あり、これを用いても反射率と同様の補正を行うことに
より、製造プロセス条件変動を正確に求め、生成・処理
装置を安定化することができる。As the optical characteristics measuring method, there are also transmittance, polarization characteristics, and the like, and by using the same, the same correction as the reflectance is performed, thereby accurately obtaining manufacturing process condition fluctuations and stabilizing the generation / processing device. Can be.
以下、図面を用いて本発明の実施例を説明する。第１
図はこの発明の第１の実施例の薄膜生産制御システムの
ブロック図である。この図において、ウエハ搬送路104
により光学特性測定系108に搬送されたウエハは、薄膜
を生成・処理する前の状態での光学特性が測定される。
この測定結果は、インターフェイス103を介しプロセス
制御系45に送られる。光学測定測定系108で光学特性が
測定されたウエハはウエハ搬送路104により薄膜生成・
処理装置107に送られ、薄膜が生成・処理される。薄膜
生成・処理装置107において薄膜が生成・処理されたウ
エハは、ウエハ搬送路104により光学特性測定系56に送
られ、光学特性測定系108で光学特性を測定した位置と
同じ位置で光学特性が測定される。この結果は、インタ
ーフェイス101を介し、プロセス制御系45に送られ、光
学特性測定系108より送られてきたデータにより補正が
かけられる。この補正がかけられたデータから薄膜生成
・処理装置のプロセス変動量が算出される。プロセス変
動量は、インターフェイス102を介し、薄膜生成・処理
装置107にフィードバックされ、薄膜生成・処理条件の
プロセス条件を制御することにより薄膜生成・処理装置
の安定化が図られる。Hereinafter, embodiments of the present invention will be described with reference to the drawings. First
FIG. 1 is a block diagram of a thin film production control system according to a first embodiment of the present invention. In this figure, the wafer transfer path 104
Thus, the optical characteristics of the wafer transferred to the optical characteristic measuring system 108 before the thin film is formed and processed are measured.
This measurement result is sent to the process control system 45 via the interface 103. The wafer whose optical characteristics have been measured by the optical measurement and measurement system 108 forms a thin film through the wafer transfer path 104.
The film is sent to the processing device 107, and a thin film is generated and processed. The wafer on which the thin film has been formed and processed by the thin film generation and processing apparatus 107 is sent to the optical property measuring system 56 via the wafer transfer path 104, and the optical property is measured at the same position as the position where the optical property was measured by the optical property measuring system 108. Measured. This result is sent to the process control system 45 via the interface 101, and is corrected by the data sent from the optical characteristic measurement system. The process variation of the thin film forming / processing apparatus is calculated from the corrected data. The process fluctuation amount is fed back to the thin film generation / processing apparatus 107 via the interface 102, and the thin film generation / processing apparatus is stabilized by controlling the process conditions of the thin film generation / processing conditions.
この実施例では、光学特性測定系108及び光学特性測
定系56は、薄膜生成・処理条件の安定化が図られる複数
の薄膜生成・処理装置にも接続可能である。In this embodiment, the optical property measuring system 108 and the optical property measuring system 56 can be connected to a plurality of thin film forming / processing apparatuses for stabilizing thin film forming / processing conditions.
この実施例の薄膜生成・処理装置としてフォトレジス
ト塗布装置に適用する場合、薄膜生成・処理装置107が
フォトレジスト塗布装置に、プロセス制御系45によって
算出されるプロセス変動量がフォトレジスト塗布・ベー
ク条件変動量になればよい。また、この実施例の薄膜生
成・処理装置として薄膜成膜装置に適用する場合、薄膜
生成・処理装置107が薄膜生成装置になればよい。ま
た、この実施例の薄膜・生成処理装置としてエッチング
装置装置に適用する場合、薄膜生成・処理装置107がエ
ッチング装置になればよい。また、この実施例の薄膜生
成・処理装置として光を照射しても光学特性の変化しな
い薄膜を塗布する薄膜塗布装置に適用する場合、薄膜生
成・処理装置107が薄膜塗布装置になればよい。When the thin film generation / processing apparatus 107 is applied to a photoresist coating apparatus as the thin film generation / processing apparatus of this embodiment, the thin film generation / processing apparatus 107 is applied to the photoresist coating apparatus, and the process variation calculated by the process control system 45 is the photoresist coating / baking condition. What is necessary is just a variation amount. Further, when the thin film generation / processing apparatus of this embodiment is applied to a thin film deposition apparatus, the thin film generation / processing apparatus 107 may be a thin film generation apparatus. When the thin film generation / processing apparatus of this embodiment is applied to an etching apparatus, the thin film generation / processing apparatus 107 may be an etching apparatus. Further, when the thin film generation / processing apparatus of this embodiment is applied to a thin film coating apparatus that applies a thin film whose optical characteristics do not change even when irradiated with light, the thin film generation / processing apparatus 107 may be a thin film coating apparatus.
薄膜・生成処理装置がフォトレジスト塗布装置で、制
御される装置が投影露光装置である例を第８図に示す。
光学特性測定系108で測定されたデータを用い、光学特
性測定系56で測定されたデータにプロセス制御系45で補
正をかけ、フォオレジストのみの光学特性を抽出し、こ
のデータから要求通りのパターンを作成するために最適
な露光エネルギーが設定される。この露光エネルギーは
インターフェイス57を介し、投影露光装置58にフィード
バックされ、光学特性測定系108及び56で光学特性が測
定されたウエハが投影露光装置58に搬入されたとき、こ
のウエハに対する露光エネルギーで露光し、投影露光装
置58で作成されるパターン寸法の安定化が図られる。FIG. 8 shows an example in which the thin film / generation processing apparatus is a photoresist coating apparatus and the controlled apparatus is a projection exposure apparatus.
Using the data measured by the optical property measurement system 108, the data measured by the optical property measurement system 56 is corrected by the process control system 45, and the optical properties of only the photoresist are extracted. Exposure energy is set to create the optimum exposure energy. This exposure energy is fed back to the projection exposure apparatus 58 via the interface 57, and when the wafer whose optical characteristics have been measured by the optical characteristic measurement systems 108 and 56 is carried into the projection exposure apparatus 58, the exposure energy for this wafer is used. In addition, the pattern dimension created by the projection exposure apparatus 58 is stabilized.
薄膜・生成処理装置がフォトレジスト塗布装置で、制
御される装置が現像装置である例を第９図に示す。光学
特性測定系108で測定されたデータを用い、光学特性測
定系56で測定されたデータにプロセス制御系45で補正を
かけ、フォトレジストのみの光学特性を抽出し、このデ
ータから要求通りのパターンを作成するために最適な現
像条件が設定される。この現状条件はインターフェイス
110を介し、現像装置109にフィードバックされ、光学特
性測定系108及び56で光学特性が測定されたウエハが現
像装置109に搬入されたとき、このウエハに対する現像
条件で現像し、現像装置109で作成されるパターン寸法
の安定化が図られる。FIG. 9 shows an example in which the thin film / generation processing apparatus is a photoresist coating apparatus and the controlled apparatus is a developing apparatus. Using the data measured by the optical property measurement system 108, the data measured by the optical property measurement system 56 is corrected by the process control system 45, and the optical properties of only the photoresist are extracted. Developing conditions are set to create the image. This current condition is the interface
When the wafer which is fed back to the developing device 109 via the optical device 110 and whose optical characteristics are measured by the optical characteristic measuring systems 108 and 56 is carried into the developing device 109, the wafer is developed under the developing conditions for the wafer, and is created by the developing device 109. The pattern size to be stabilized is achieved.
第10図はこの発明の第１の実施例である光学特性測定
系56の実用形態とインターフェイス57を有する装置の概
略図である。この図において水銀灯などの光源26からの
照明光は、レンズ81により光ファイバー等に導かれ、２
つに分岐される。これら分岐された各光は、レンズ82,8
3を介してシャッタ29,30を通り、露光波長を通す干渉フ
ィルタ27により露光波長の光と、露光に関与しない波長
の光を透過するシャープカットフィルタ28により露光に
関与しない光とに変換されて取り出され、シャッタ28,3
0の切り替えによりオンオフされる。２つの光はダイク
ロイックミラー31により再び光軸が合成される。そして
ハーフミラー85によりウエハ上に照射される。レンス84
は対物レンズである。視野絞り55は、ウエハ上への露光
波長の光の照射領域を挟めて限定させるものである。シ
ャッタ290を閉じ、シャッタ30を開ければ、露光に関与
しない光をウエハに照射し、ハーフミラー85を透過し、
ダイクロイックミラー86で反射した光をアライメント検
出系（TVカメラ）32で観察しながらXYステージ36を動か
すことにより、フォトレジストを露光することなしにウ
エハ上の特定の領域を探すことができる。またステージ
を止め、シャッタ29を開けシャッタ30を閉じれば、その
場所に露光光を照射することができる。FIG. 10 is a schematic diagram of a practical embodiment of an optical characteristic measuring system 56 and an apparatus having an interface 57 according to a first embodiment of the present invention. In this figure, illumination light from a light source 26 such as a mercury lamp is guided to an optical fiber or the like by a lens 81, and
Branches into two. Each of these split lights is passed through lenses 82 and 8
After passing through the shutters 29 and 30 through 3, the light of the exposure wavelength is converted into light of the exposure wavelength by the interference filter 27 passing the exposure wavelength, and the light of the wavelength not involved in the exposure is converted into light not involved in the exposure by the sharp cut filter 28. Take out and shutter 28,3
It is turned on and off by switching 0. The optical axes of the two lights are combined again by the dichroic mirror 31. Then, the light is irradiated onto the wafer by the half mirror 85. Lens 84
Is an objective lens. The field stop 55 limits the irradiation region of the wafer at the exposure wavelength. When the shutter 290 is closed and the shutter 30 is opened, the wafer is irradiated with light that is not involved in exposure, and passes through the half mirror 85,
By moving the XY stage 36 while observing the light reflected by the dichroic mirror 86 with the alignment detection system (TV camera) 32, a specific area on the wafer can be searched without exposing the photoresist. When the stage is stopped, the shutter 29 is opened, and the shutter 30 is closed, exposure light can be applied to that location.
一方下地層の複素屈折率ｎ′、後述する光量測定系35
から検出される照射照度I0,レジスト膜厚ｄのデータ
は、予め測定して最適露光量検出系37に入力され、下地
層の反射率Ｒ′は光学特性測定系108で測定され、最適
露光量検出系37に入力されている。従って、最適露光量
検出系37は、光学特性測定器（フォトセンサ）33で測定
される露光中の２次的光学特性であるフォトレジストか
らの総合反射率Ｒの変化に基づいて、前記した（１）式
の関係からレジストの複素屈折率Ｎの時間的変化を算出
し、このレジストの複素屈折率Ｎが所望の値N1（＝n1−
ｉ・κ１）になるまでの露光時間T2と、後述する光量測
定系35から検出される照射照度I2とに基づいて最適露光
エネルギE1（＝露光時間T2×照射照度I2）を求めること
ができる。On the other hand, the complex refractive index n 'of the underlayer and a light quantity measuring system 35 described later
The data of the irradiation illuminance I0 and the resist film thickness d detected from are measured in advance and input to the optimum exposure amount detection system 37, and the reflectance R 'of the underlayer is measured by the optical characteristic measurement system 108, and the optimum exposure amount Input to the detection system 37. Accordingly, the optimum exposure amount detection system 37 is based on the change in the total reflectance R from the photoresist, which is the secondary optical characteristic during exposure, measured by the optical characteristic measuring device (photo sensor) 33 (see FIG. The temporal change of the complex refractive index N of the resist is calculated from the relationship of the equation (1), and the complex refractive index N of the resist is set to a desired value N1 (= n1−
The optimum exposure energy E1 (= exposure time T2 × irradiation illuminance I2) can be obtained based on the exposure time T2 until i · κ1) and the irradiation illuminance I2 detected from the light quantity measuring system 35 described later.
また、フォトレジストの光学特性は、第５図（ａ），
（ｂ）に示すように、最終的には、既知の値である一定
値κ∞,n∞に収束する。従って、（１）式の関係（但し
Ｎ∞＝ｎ∞−ｉ・κ∞は既知である。）に基づいてこの
状態でのレジスト膜厚ｄの変化に対する反射率Ｒ∞は第
11図に示すようになる。そこで、フォトレジストを露光
し、光学特性がある一定値に収束したときの反射率Ｒ∞
を測定すれば、第11図に示す関係からその反射率からレ
ジストの膜厚ｄが前記したように予め測定せずに求めら
れる。従って、フォトレジストの膜厚を予め測定してお
かなくても上記のようにフォトレジストからの総合反射
率Ｒの変化からフォトレジストの膜厚ｄを求めることが
できる。従って、最適露光量検出系37において、レジス
トの複素屈折率Ｎの時間的変化を算出する際、求められ
たフォトレジストの膜厚ｄを用いればよい。The optical characteristics of the photoresist are shown in FIG.
Finally, as shown in (b), it converges to a constant value κ∞, n∞ which is a known value. Therefore, based on the relationship of the equation (1) (where N∞ = n∞−i · κ∞ is known), the reflectance R に 対 す る for the change in the resist film thickness d in this state is the first.
As shown in FIG. Then, the photoresist is exposed, and the reflectance R∞ when the optical characteristics converge to a certain value.
Is measured, the thickness d of the resist can be obtained from the reflectance from the relationship shown in FIG. 11 without previously measuring as described above. Accordingly, the photoresist film thickness d can be obtained from the change in the total reflectance R from the photoresist as described above without previously measuring the photoresist film thickness. Therefore, when the temporal change of the complex refractive index N of the resist is calculated in the optimum exposure amount detection system 37, the obtained photoresist film thickness d may be used.
照度検出器34はウエハ位置における照度を測定する光
電変換素子である。露光位置（フォトレジストからの総
合反射率Ｒの変化を検出する位置）に照度検出器34をXY
ステージを用いて移動すると、光学測定系35は照度検出
器34から得られる信号に基づいて露光光の強度（照射強
度I2）を測定することができる。そこで、最適露光量検
出系37は、予め測定されて入力された下地層の複素屈折
率ｎ′、下地層の反射率Ｒ′、光量測定系35から検出さ
れる照射照度I2、レジスト膜厚ｄのデータと、光学特性
測定器（フォトセンサ）33から測定されるフォトレジス
トからの総合反射率Ｒの変化に基づいて、前記した
（１）式の関係からレジストの複素屈折率Ｎの時間的変
化を算出し、このレジストの複素屈折率Ｎが所望の値N1
（＝n1−ｉ・κ１）になるまでの露光時間T2と、照射検
出器34で検出して光量測定系35から得られる照射照度I2
とに基づいて最適露光エネルギE1（＝露光時間T1×照射
照度I2）を求める。このように求められた最適露光エネ
ルギE1が投影露光装置58の照明制御系38にデータが転送
される。The illuminance detector 34 is a photoelectric conversion element that measures illuminance at a wafer position. Move the illuminance detector 34 to the exposure position (the position where the change in the total reflectance R from the photoresist is detected)
When moved using the stage, the optical measurement system 35 can measure the intensity of the exposure light (irradiation intensity I2) based on the signal obtained from the illuminance detector 34. Therefore, the optimum exposure amount detection system 37 includes a base layer complex refractive index n ', a base layer reflectance R', an irradiation illuminance I2 detected from the light amount measurement system 35, and a resist film thickness d, which are measured and input in advance. Of the complex refractive index N of the resist from the relationship of the above equation (1), based on the data of (1) and the change of the total reflectance R from the photoresist measured by the optical property measuring device (photo sensor) 33. Is calculated, and the complex refractive index N of the resist is set to a desired value N1.
(= N1−i · κ1) and the irradiation illuminance I2 detected by the irradiation detector 34 and obtained from the light quantity measuring system 35
, The optimum exposure energy E1 (= exposure time T1 × irradiance I2) is obtained. The optimum exposure energy E1 thus obtained is transferred to the illumination control system 38 of the projection exposure apparatus 58.
次に以上の構成で動作を説明する。まず、フォトレジ
ストを塗布したウエハ18が装置に搬入される。そしてシ
ャッタ29を閉じ、シャッタ30を開け露光に関与しない光
をウエハ18に照射し、アライメント検出系32でウエハの
一部領域例えばウエハの回路を転写する場所に影響を与
えない場所であるスクライブラインの一部をXYステージ
36でウエハ18を移動して探す。そしてこの位置におい
て、視野絞り55で露光する領域を限定し、シャッタ30を
閉じ、シャッタ29を開け、露光波長の光でウエハ18を露
光する。そして露光中におけるウエハからの２次的光学
特性であるフォトレジストからの総合反射率Ｒの変化を
光学特性測定器（フォトセンサ）33で測定し、最適露光
量検出系37は、予め測定されて入力された下地層の複素
屈折率ｎ′，下地層の反射率Ｒ′、光量測定系35から検
出される照射照度I2,レジスト膜厚ｄのデータと、光学
特性測定器（フォトセンサ）33から測定されるフォトレ
ジストからの総合反射率Ｒの変化に基づいて、前記した
（１）式の関係からレジストの複素屈折率Ｎの時間的変
化を算出し、このレジストの複素屈折率Ｎが所望の値N1
（＝n1−ｉ・κ１）になるまで，即ちウエハ18を露光す
るために最適な露光時間T2を求める。次にXYステージ36
で照度検出器34を露光位置に移動し、露光光の照度を照
度検出器34で検出して光量測定系35から求める。このよ
うに最適露光量検出系37は、光量測定系35から得られる
照射照度I2と最適な露光時間T2とに基づいて最適露光エ
ネルギE1（＝露光時間T2×照射照度I2）を求め、投影露
光装置58の照明制御系38に転送される。そして上記のよ
うに最適露光エネルギE1が求められたウエハ18が投影露
光装置58に搬入されたとき、該投影露光装置58内に設置
された露光光照度検出器（第10図においては図示せず。
第16図に９で示す。）により検出された露光光照度I1か
ら照明制御系38よりこのエネルギに見合う露光時間T1が
設定され、露光照明系39のシャッタが駆動される。Next, the operation of the above configuration will be described. First, the wafer 18 coated with the photoresist is carried into the apparatus. Then, the shutter 29 is closed, the shutter 30 is opened, and the wafer 18 is irradiated with light that is not involved in the exposure, and the alignment detection system 32 does not affect a partial area of the wafer, for example, a scribe line that does not affect the location where the circuit of the wafer is transferred. Part of the XY stage
The wafer 18 is moved by 36 and searched. At this position, the area to be exposed is limited by the field stop 55, the shutter 30 is closed, the shutter 29 is opened, and the wafer 18 is exposed to light having an exposure wavelength. During the exposure, a change in the total reflectance R from the photoresist, which is a secondary optical characteristic from the wafer, is measured by an optical characteristic measuring device (photo sensor) 33, and an optimum exposure amount detection system 37 is measured in advance. The input data of the complex refractive index n 'of the underlayer, the reflectivity R' of the underlayer, the irradiation illuminance I2 and the resist film thickness d detected from the light quantity measurement system 35, and the optical property measurement device (photosensor) 33 Based on the change in the total reflectance R from the measured photoresist, the temporal change of the complex refractive index N of the resist is calculated from the relationship of the above equation (1), and the complex refractive index N of the resist is set to a desired value. Value N1
(= N1−i · κ1), that is, the optimum exposure time T2 for exposing the wafer 18 is determined. Next, XY stage 36
To move the illuminance detector 34 to the exposure position, the illuminance of the exposure light is detected by the illuminance detector 34, and is obtained from the light quantity measuring system 35. As described above, the optimum exposure amount detection system 37 calculates the optimum exposure energy E1 (= exposure time T2 × irradiation illuminance I2) based on the irradiation illuminance I2 obtained from the light amount measurement system 35 and the optimum exposure time T2, It is transferred to the lighting control system 38 of the device 58. When the wafer 18 for which the optimum exposure energy E1 is obtained as described above is carried into the projection exposure apparatus 58, an exposure light illuminance detector (not shown in FIG. 10) installed in the projection exposure apparatus 58.
This is indicated by 9 in FIG. The exposure time T1 corresponding to this energy is set by the illumination control system 38 from the exposure light illuminance I1 detected in step (1), and the shutter of the exposure illumination system 39 is driven.
この実施例では、光学特性測定系56はインターフェイ
ス57を介し、最適露光エネルギE1が求められたウエハ18
が搬入される複数の投影露光装置にも接続が可能であ
る。In this embodiment, the optical characteristic measuring system 56 is connected via the interface 57 to the wafer 18 for which the optimum exposure energy E1 has been determined.
Can also be connected to a plurality of projection exposure apparatuses into which the camera is carried.
この実施例でフォトセンサ33の代りに分光器を用いる
ことにより２次的光学特性として露光過程における分光
スペクトルを測定することもできる。この際、まず前記
実施例と同様に、シャッタ29を閉じ、シャッタ30を開け
露光に関与しない光をフエハ18に照射し、アライメント
検出系32でウエハの一部領域例えばウエハの回路を転写
する場所に影響を与えない場所であるスクライブライン
の一部をXYステージ36でウエハ18を移動して探す。そし
てこの位置において、視野絞り55で露光する領域を限定
し、シャッタ30を開いた状態で、更にシャッタ29を開
け、多くの波長を含む光と露光波長の光とでウエハ18を
露光する。すると、分光器からは第12図に示すように露
光前の分光透過率から露光後の分光透過率へと時間的に
変化する分光透過率が検出される。そこで、最適露光量
検出系37に一定値を示す露光後の分光透過率（基準分光
透過率）のデータを入力しておき、最適露光量検出系37
は、上記分光器から検出される分光透過率の時間的変化
と露光後の分光透過率（基準分光透過率）のデータとを
比較し、一致する最適な露光時間T2を求める。次にXYス
テージ36で照度検出器34を露光位置に移動し、露光光の
照度を照度検出器34で検出して光量測定系35から求め
る。このように最適露光量検出系37は、光量測定系35か
ら得られる照射照度I2と最適な露光時間T2とに基づいて
最適露光エネルギE1（＝露光時間T2×照射照度I2）を求
め、投影露光装置58の照明制御系38に転送される。従っ
て前記実施例と同様に上記のように最適露光エネルギE1
が求められたウエハ18が投影露光装置58に搬入されたと
き、該投影露光装置58内に設置された露光光照度検出器
（第10図において図示せず。第16図に９で示す。）によ
り検出された露光光照度I1から照明制御系38によりこの
エネルギに見合う露光時間T1が設定され、露光照明系39
のシャッタが駆動される。In this embodiment, by using a spectroscope instead of the photosensor 33, a spectral spectrum during the exposure process can be measured as a secondary optical characteristic. At this time, similarly to the above-described embodiment, the shutter 29 is closed, the shutter 30 is opened, and light not involved in the exposure is irradiated on the wafer 18, and the alignment detection system 32 transfers a partial area of the wafer, for example, a place where a circuit of the wafer is transferred. The XY stage 36 moves the wafer 18 to search for a part of the scribe line which is a place where the scribe line is not affected. At this position, the area to be exposed by the field stop 55 is limited, and with the shutter 30 opened, the shutter 29 is further opened to expose the wafer 18 with light containing many wavelengths and light of the exposure wavelength. Then, as shown in FIG. 12, the spectroscope detects a spectral transmittance that changes with time from the spectral transmittance before the exposure to the spectral transmittance after the exposure, as shown in FIG. Therefore, data of the spectral transmittance after exposure (reference spectral transmittance) showing a constant value is input to the optimal exposure amount detection system 37, and the optimum exposure amount detection system 37 is input.
Compares the temporal change of the spectral transmittance detected from the spectroscope with the data of the spectral transmittance after exposure (reference spectral transmittance), and finds a matching optimal exposure time T2. Next, the illuminance detector 34 is moved to the exposure position by the XY stage 36, and the illuminance of the exposure light is detected by the illuminance detector 34 and is obtained from the light quantity measuring system 35. As described above, the optimum exposure amount detection system 37 calculates the optimum exposure energy E1 (= exposure time T2 × irradiation illuminance I2) based on the irradiation illuminance I2 obtained from the light amount measurement system 35 and the optimum exposure time T2, It is transferred to the lighting control system 38 of the device 58. Therefore, the optimum exposure energy E1
Is transferred into the projection exposure apparatus 58, the exposure light illuminance detector (not shown in FIG. 10; indicated by 9 in FIG. 16) installed in the projection exposure apparatus 58. An exposure time T1 corresponding to this energy is set by the illumination control system 38 from the detected exposure light illuminance I1, and the exposure illumination system 39
Are driven.
この実施例の異なる例として第13図と第14図がある。
第13図、第14図もとに基本構成は第10図と同じである。
第13図２次的光学特性を測定する露光に関与しない波長
の光を斜方より照射し、斜方で検出し、この時の偏光特
性や反射率等を調べることにより、下地層の影響を受け
にくい形で光学特性を測定することができる。また第14
図においては、露光による透明基板上のフォトレジスト
の透過率または分光透過率の低下の様子をフォトレジス
トの透過率または分光透過率の変化の様子をフォトセン
サ33,33′を用いることにより測定できる。これは、TFT
液晶ディスプレイなどの光を透過する物質90にパターン
を転写露光の際有効である。13 and 14 show different examples of this embodiment.
13 and 14, the basic configuration is the same as that of FIG.
Fig. 13 Measuring secondary optical properties Light of a wavelength not involved in exposure is irradiated obliquely, detected obliquely, and the influence of the underlayer is examined by examining the polarization characteristics and reflectance at this time. Optical characteristics can be measured in a form that is difficult to receive. Also the 14th
In the figure, the state of the decrease in the transmittance or the spectral transmittance of the photoresist on the transparent substrate due to the exposure can be measured by using the photosensors 33 and 33 'to indicate the state of the change in the transmittance or the spectral transmittance of the photoresist. . This is a TFT
This is effective when transferring and exposing a pattern to a light-transmitting substance 90 such as a liquid crystal display.
また、上記実施例と違って光学特性測定系56で制御す
る装置がフォトレジスト塗布装置49である例を第15に示
す。すなわち光学特性測定系56で測定された光学特性の
変化の測定結果が常に一定となる様にプロセス制御系45
からインターフェイス102にデータを送り、これに基づ
き、例えばスピンナー41の回転数、ベーク炉42の温度及
びベーク時間等と制御して、フォトレジスト塗布工程を
安定化させることができる。この実施例では、光学特性
測定系56はインターフェイス57を介し、フォトレジスト
塗布工程を安定化する複数のフォトレジスト塗布装置に
接続可能である。40はウェハストッカを示す。In addition, a fifteenth example in which the apparatus controlled by the optical property measuring system 56 is a photoresist coating apparatus 49 unlike the above-described embodiment is shown. That is, the process control system 45 is controlled so that the measurement result of the change in the optical property measured by the optical property measurement system 56 is always constant.
The interface transmits data to the interface 102, and based on the data, controls the number of revolutions of the spinner 41, the temperature of the baking furnace 42, the baking time, and the like, thereby stabilizing the photoresist coating process. In this embodiment, the optical property measuring system 56 can be connected via an interface 57 to a plurality of photoresist coating apparatuses for stabilizing the photoresist coating process. Numeral 40 denotes a wafer stocker.
また、光学特性測定系56を用いて投影露光装置58とフ
ォトレジスト塗布装置49の双方を制御することもでき
る。Further, both the projection exposure apparatus 58 and the photoresist coating apparatus 49 can be controlled using the optical property measuring system 56.
第16図は縮小投影露光装置にウエハの露光による光学
的特性の変化を測定する系を搭載したときの実施例であ
る。この図において、水銀ランプ１からの照明光は電源
制御系２により照度を一定に制御される。一方ハーフミ
ラー３により露光系とプリアライメント系に分岐され
る。ハーフミラー３を透過した光はシャッタ制御系４に
よりシャッタ５の開閉時間が制御される。尚、この系で
は干渉フィルタ59により露光波長のみが抽出される。コ
ンデンサレンズ６を透過した光は所要のパターンを形成
したレチクル７に照射され、縮小投影レンズ８により、
ウエハ18上にレチクルの像を結像させる。一方、ハーフ
ミラー３により反射した光はプリアライメント系に光フ
ァイバー90などの手段を用いて視野絞り55を介して導か
れる。プリアライメント系を導かれた光は露光に関与し
ない波長の光のみを透過するシャープカットフィルタ12
と露光波長の干渉フィルタ13を切り替えることにより、
フィルタ12又は13を透過する光が選択される。フィルタ
にシャープカットフィルタ12を選択することでウエハ18
上のアライメントパターンをフォトレジストを露光する
ことなしにプリアライメント検出系32で検出し、露光波
長の絞られた光をウエハ18上のスクライブライン位置に
設定できる。ここでまた、干渉フィルタ18に切り替える
ことにより、ウエハ18を部分露光することができ、また
視野絞り55により露光光の照射される領域を限定でき
る。そして露光過程におけるフォトレジストの総合反射
率Ｒ時間的変化をフォトセンサ33で測定し、最適露光量
検出系37は、予め測定されて入力された下地層の複素屈
折率ｎ′、レジストの薄厚ｄと、光学特性測定系108で
測定された下地層の反射率Ｒ′とフォトセンサ33により
測定されるフォトレジストの総合反射率Ｒと照度検出器
９の出力を入力している光量測定系35から検出される照
度I2の値により、前記（１）式からレジストの複素屈折
率Ｎの時間的変化を算出し、このレジストの複素屈折率
Ｎが所望の値N1（＝n1−ｉ・κ１）になるまでの最適露
光時間T2を求め、この最適露光時間T2と光量測定系35か
ら検出される照度I2との値により、最適露光エネルギE1
を決定し、最適露光エネルギE1が決定されたウエハ18に
対して実際レチクル７に回路パターンを縮小投影レンズ
８により露光する際の露光照度I2を照度検出器９で測定
して光量測定系35から得られる露光照度I1に基いて上記
最適露光エネルギE1になる露光照度または露光時間T1を
求め、インターフェイス57を介して照度制御系である電
源制御系２により光源電圧及びシャッタ制御系４により
シャッタ開閉時間が制御するのは上記の実施例と同じで
ある。照度検出器９はこの結像位置における照度を測定
する光電変換素子であり、光量測定系35によりその照度
は測定される。また、照度検出器９はXYステージ36を移
動することによりプリアライメント系における照度を測
定することもできる。FIG. 16 shows an embodiment in which a system for measuring a change in optical characteristics due to exposure of a wafer is mounted on a reduction projection exposure apparatus. In this figure, the illumination light from the mercury lamp 1 is controlled to have a constant illuminance by a power supply control system 2. On the other hand, the light is branched by the half mirror 3 into an exposure system and a pre-alignment system. The opening and closing time of the shutter 5 of the light transmitted through the half mirror 3 is controlled by a shutter control system 4. In this system, only the exposure wavelength is extracted by the interference filter 59. The light transmitted through the condenser lens 6 is applied to a reticle 7 on which a required pattern has been formed.
An image of the reticle is formed on the wafer 18. On the other hand, the light reflected by the half mirror 3 is guided to the pre-alignment system through the field stop 55 by using an optical fiber 90 or other means. Sharp cut filter that transmits only light with a wavelength that does not contribute to exposure for light guided through the pre-alignment system.
By switching between the interference filter 13 and the exposure wavelength,
Light that passes through the filter 12 or 13 is selected. By selecting the sharp cut filter 12 as the filter, the wafer 18
The upper alignment pattern can be detected by the pre-alignment detection system 32 without exposing the photoresist, and the light whose exposure wavelength is narrowed can be set at the scribe line position on the wafer 18. Here, by switching to the interference filter 18, the wafer 18 can be partially exposed, and the area irradiated with the exposure light by the field stop 55 can be limited. Then, the change over time in the total reflectance R of the photoresist during the exposure process is measured by the photo sensor 33, and the optimum exposure amount detection system 37 calculates the complex refractive index n 'of the underlayer, which is measured and input in advance, and the thin thickness d of the resist. From the light amount measuring system 35 to which the reflectance R 'of the underlayer measured by the optical characteristic measuring system 108, the total reflectance R of the photoresist measured by the photo sensor 33, and the output of the illuminance detector 9 are input. the detected values of the illuminance I 2, wherein (1) to calculate a temporal change of the complex refractive index n of the resist from the equation, the complex refractive index n of the resist is desired value n 1 (= n 1 -i · determine the optimum exposure time T 2 of the until kappa 1), the value of the illuminance I 2 detected from the optimal exposure time T 2 and the light quantity measuring system 35, the optimum exposure energy E 1
Determine the light quantity measuring system as measured by the irradiance detector 9 exposure intensity I 2 at the time of exposure by the reduction projection lens 8, the circuit pattern on the actual reticle 7 with respect to the optimum exposure energy E 1 wafer 18 is determined seeking exposure illuminance or the exposure time T 1 becomes the optimum exposure energy E 1 based on the exposure intensity I 1 obtained from 35, source voltage and a shutter control system by the power control system 2 is a illumination control system via the interface 57 The control of the shutter opening / closing time by the step 4 is the same as in the above embodiment. The illuminance detector 9 is a photoelectric conversion element that measures the illuminance at the image forming position, and the illuminance is measured by the light amount measurement system 35. The illuminance detector 9 can also measure the illuminance in the pre-alignment system by moving the XY stage 36.
本実施例では、絶対照度を測定する必要が無い。つま
り露光系においてレチクル７上に描かれたパターンを、
ウエハ18上に転写する露光位置での照度を照度検出器９
で検出し、照度検出器９をプリアライメントを行った位
置に移動し、プリアライメント系に導かれた光の照度を
求める。するとレチクル７上に描かれたパターンをウエ
ハ18上に転写する露光位置での最適露光時間T1は、この
露光位置での照度I1、プリアライメント位置での照度を
I2、プリアライメント系に導いた光で最適露光時間をT2
とすると次の（２）式で求められる。In this embodiment, there is no need to measure absolute contrast. That is, the pattern drawn on the reticle 7 in the exposure system is
The illuminance at the exposure position to be transferred onto the wafer 18 is detected by an illuminance detector 9
Then, the illuminance detector 9 is moved to the position where the pre-alignment has been performed, and the illuminance of the light guided to the pre-alignment system is obtained. Then, the optimum exposure time T 1 at the exposure position where the pattern drawn on the reticle 7 is transferred onto the wafer 18 is determined by the illuminance I 1 at this exposure position and the illuminance at the pre-alignment position.
I 2 , the optimal exposure time is T 2 with the light guided to the pre-alignment system.
Then, it is obtained by the following equation (2).
T1＝（I2/I1）×T2 ……（２） これによりレチクル７上に描かれたパターンをウエハ
18上に転写する露光位置での最適露光時間T1は、最適露
光量検出系37で光学特性測定器33で測定される光学特性
（反射率、分光スペクトル等）と照度検出器９で測定さ
れる照度から求められる。ここで求めた露光時間にする
ため、制御系４で照明系の電源制御２による水銀ランプ
の照度及びシャッタ５の開閉時間を制御し、最適露光時
間でレチクル７上に描かれたパターンをウエハ18上に転
写する、こうしてレクチル７上のパターンを要求パター
ン通り転写露光できる。また、本実施例は、露光直前の
ウエハについての最適露光エネルギを求めており、最適
露光エネルギを求めてから露光までの時間が短いためプ
ロセス変動の影響を受けることがない。T 1 = (I 2 / I 1 ) × T 2 (2) Thus, the pattern drawn on the reticle 7 is converted into a wafer.
The optimal exposure time T 1 at the exposure position to be transferred onto 18 is measured by the illuminance detector 9 and the optical characteristics (reflectance, spectral spectrum, etc.) measured by the optical characteristic measuring device 33 by the optimal exposure amount detecting system 37. Illuminance. In order to obtain the exposure time obtained here, the control system 4 controls the illuminance of the mercury lamp and the opening and closing time of the shutter 5 by the power supply control 2 of the illumination system, and the pattern drawn on the reticle 7 with the optimum exposure time is transferred to the wafer 18. The pattern transferred onto the reticle 7 can be transferred and exposed according to the required pattern. In this embodiment, the optimum exposure energy for the wafer immediately before the exposure is determined, and the time from the determination of the optimum exposure energy to the exposure is short, so that there is no influence from the process fluctuation.
次に第17図はフォトレジスト塗布装置49に光学特性測
定系56を搭載したときの例である。この図において、ウ
エハ18は光学特性測定系108により下地層の光学特性が
測定され、ウエハストッカ40からフォトレジストを塗布
するスピンナー41,ベーク炉42を通る。この後、光学測
定系56で露光過程におけるフォトレジストの反射率の変
化の様子を測定する。光学特性測定系56より得られた結
果と光学特性測定系108より得られる結果は、インター
フェイス57、103を介してプロセス制御系45に入力さ
れ、プロセス条件変動量（例えばスピンナ41による塗布
量又はベーク炉42によるベーク条件等）が制御される。Next, FIG. 17 shows an example in which an optical characteristic measuring system 56 is mounted on a photoresist coating device 49. In this figure, the optical characteristics of the underlying layer of the wafer 18 are measured by an optical characteristic measuring system 108, and the wafer 18 passes from a wafer stocker 40 through a spinner 41 for applying a photoresist and a baking furnace 42. After that, the optical measurement system 56 measures the change in the reflectance of the photoresist during the exposure process. The result obtained from the optical property measuring system 56 and the result obtained from the optical property measuring system 108 are input to the process control system 45 via the interfaces 57 and 103, and the process condition fluctuation amount (for example, the amount of application or baking by the spinner 41) is changed. Baking conditions by the furnace 42) are controlled.
この実施例により、フォトレジスト塗布過程における
プロセス条件変動によるフォトレジストの膜厚変化及び
吸収係数などの光学特性の変化を低減し、フォトレジス
ト塗布過程を安定化させることができる。その結果、フ
ォトレジスト塗布過程において安定化したウエハに対し
て均一な露光を行なうことができる。According to this embodiment, a change in optical characteristics such as a change in the thickness of the photoresist and an absorption coefficient due to a change in process conditions in the photoresist application process can be reduced, and the photoresist application process can be stabilized. As a result, uniform exposure can be performed on the stabilized wafer in the photoresist coating process.
なお、前記実施例では、フォトレジストの総合反射率
Ｒからフォトレジスト複素屈折率Ｎを算出するようにし
たが、直接フォトレジストの複素屈折率Ｎが測定できれ
ばよいことは明らかである。In the above embodiment, the complex refractive index N of the photoresist is calculated from the total reflectance R of the photoresist. However, it is clear that the complex refractive index N of the photoresist can be directly measured.
第18図はプロセス変動量を補正される装置がフォトレ
ジスト塗布装置49と縮小投影露光装置58で、フォトレジ
スト塗布、ベーク及び露光過程を安定化させるシステム
の概略図である。この図において、露光過程に搬入され
たウエハは、光学特性測定系108においてフォトレジス
トを塗布する前のウエハの光学特性が測定され、このデ
ータはインターフェイス103を介してプロセス制御系45
に送られる。光学特性が測定されたウエハは、ウエハ搬
送路104によってフォトレジスト塗布装置49に搬入され
フォトレジストが塗布、ベークされる。このフォトレジ
ストを塗布したウエハはウエハ搬送路104によって光学
特性測定系56に搬入され、フォトレジストを塗布する前
に光学特性測定系108で光学特性が測定され、このデー
タはインターフェイス101を介してプロセス制御系45に
送られる。光学特性測定系108より送られてきたデータ
を用い、光学特性測定系56により送られてきたデータに
補正をかけ、この結果をもとにプロセス制御系45により
露光工程のプロセス条件変動量である最適露光エネルギ
及びフォトレジスト塗布工程のプロセス条件変動量が求
められる。光学特性が測定されたウエハがウエハ搬送路
104によって投影露光装置58に搬入されると、プロセス
制御系45よりこのウエハに対応した最適露光エネルギが
インターフェイス57を介して投影露光装置58に入力さ
れ、このエネルギに見合う最適露光時間で露光され、パ
ターン寸法の安定化が図られる。また、プロセス制御系
45により求められたフォトレジスト塗布工程のプロセス
変動量は、インターフェイス102を介してフォトレジス
ト塗布装置49にフィードバックされ、フォトレジスト塗
布、ベーク条件の安定化が図られる。FIG. 18 is a schematic diagram of a system for stabilizing a photoresist coating, baking and exposure process by using a photoresist coating device 49 and a reduced projection exposure device 58 as devices for correcting the process variation. In this figure, the optical characteristics of the wafer carried in the exposure process before the photoresist is applied in the optical characteristic measuring system 108 are measured.
Sent to The wafer whose optical characteristics have been measured is carried into the photoresist coating device 49 through the wafer transfer path 104, where the photoresist is coated and baked. The wafer coated with the photoresist is carried into the optical property measuring system 56 by the wafer transfer path 104, and the optical property is measured by the optical property measuring system 108 before the photoresist is applied, and the data is processed through the interface 101. It is sent to the control system 45. Using the data sent from the optical property measurement system 108, the data sent by the optical property measurement system 56 is corrected, and based on the result, the process condition variation amount of the exposure process is calculated by the process control system 45. The optimum exposure energy and the amount of process condition variation in the photoresist coating process are determined. The wafer whose optical characteristics have been measured is transferred to the wafer transfer path.
When the wafer is carried into the projection exposure apparatus 58 by 104, the optimum exposure energy corresponding to the wafer is input from the process control system 45 to the projection exposure apparatus 58 via the interface 57, and the wafer is exposed for the optimal exposure time corresponding to this energy, The pattern dimensions are stabilized. Also, process control system
The process variation amount in the photoresist coating process obtained by 45 is fed back to the photoresist coating device 49 via the interface 102, and the photoresist coating and the baking conditions are stabilized.
この実施例では、光学特性測定系108及び光学特性測
定系56は、製造プロセス条件であるフォトレジスト塗
布、ベーク条件の安定化が図られる複数のフォトレジス
ト塗布装置や最適露光エネルギが求められたウエハが搬
入される複数の投影露光装置にも接続可能である。In this embodiment, the optical property measuring system 108 and the optical property measuring system 56 are composed of a plurality of photoresist coating apparatuses for stabilizing the photoresist application and the baking conditions, which are the manufacturing process conditions, and a wafer for which the optimum exposure energy is required. Can also be connected to a plurality of projection exposure apparatuses into which the data is carried.
上記露光、塗布、ベーク条件制御をウエハ数枚に一回
行えば、従来の先行作業を移動化する効果がある。ま
た、同じ製造装置でもウエハ毎にプロセス条件が異な
り、これを考慮する必要がある場合は上記露光、塗布、
ベーク条件制御をウエハ毎に行うことが可能である。ま
た、ウエハ内でのプロセス条件変動が問題になる場合
は、チップ毎に上記露光条件制御とウエハ内での塗布、
ベーク条件制御を行うことが可能である。If the above-described exposure, coating, and baking condition control is performed once for several wafers, there is an effect of moving the conventional preceding operation. Also, even in the same manufacturing apparatus, the process conditions are different for each wafer, and when it is necessary to consider this, the above-described exposure, coating,
Bake condition control can be performed for each wafer. Also, when the process condition variation in the wafer becomes a problem, the above-described exposure condition control and coating in the wafer for each chip are performed.
Bake condition control can be performed.
上記実施例において、光学特性測定系108はフォトレ
ジスト塗布装置49に内蔵でき、光学特性測定系56はフォ
トレジスト塗布装置49や投影露光装置58に内蔵が可能で
あり、光学特性測定系56を投影露光装置58に内蔵すれ
ば、投影露光装置58でパターンを転写露光する直前にウ
エハの最適露光エネルギを測定でき、最適露光エネルギ
ーを求めてから９露光までの時間が短いため、フォトレ
ジスト塗布時から露光時までの時間によるプロセス変動
の影響を受けることがない。また、ウエハの搬送経路が
短いため、この工程の効率が良くなる利点と搬送時の異
物の付着が低減される利点がある。In the above embodiment, the optical property measuring system 108 can be built in the photoresist coating apparatus 49, and the optical property measuring system 56 can be built in the photoresist coating apparatus 49 and the projection exposure apparatus 58, and the optical property measuring system 56 is projected. If built in the exposure device 58, the optimum exposure energy of the wafer can be measured immediately before transferring and exposing the pattern with the projection exposure device 58. It is not affected by process fluctuations due to the time until exposure. Further, since the transfer path of the wafer is short, there is an advantage that the efficiency of this step is improved and an advantage that the adhesion of foreign substances during transfer is reduced.
また、上記実施例において光学特性測定系56をフォト
レジスト塗布装置49に内蔵すれば、塗布、ベーク直後の
フォトレジストの光学特性を測定することができるた
め、フォトレジスト塗布装置49のプロセス変動量をリア
ルタイムで制御でき、安定したウエハの作成が可能とな
る。Further, if the optical characteristic measuring system 56 is incorporated in the photoresist coating device 49 in the above embodiment, the optical characteristics of the photoresist immediately after coating and baking can be measured. The wafer can be controlled in real time and a stable wafer can be created.
以上説明したように本発明によれば、光透過性を有す
る薄膜を生成・処理する工程において、生成・処理する
前のウエハの光学特性を測定し、生成・処理した後の光
学送性の測定値に補正を加えて生成・処理される薄膜の
みのデータを抽出し、この測定結果に基づいて生成・処
理装置のプロセス変動量を求め、これを制御することに
よって、生成・処理装置の安定化を図ることができる。As described above, according to the present invention, in the step of generating and processing a thin film having optical transparency, the optical characteristics of the wafer before the generation and processing are measured, and the optical transmission properties after the generation and processing are measured. By correcting the values and extracting only the data of the thin film that is generated and processed, the process fluctuation amount of the generation and processing device is obtained based on the measurement result, and this is controlled to stabilize the generation and processing device. Can be achieved.
第１図は本発明に関わる第１の実施例の薄膜生産管理シ
ステムの概略構成を示すブロック図、第２図はフォトレ
ジスト及び光透過性を有する下地層形成膜内の多重反射
の影響を示す図、第３図は定在波効果を示す図、第４図
は露光工程のフローを示す図、第５図は露光エネルギと
フォトレジストの反射率及び屈折率の関係を示す図、第
６図は成膜時間と反射率の関係を示す図、第７図は成膜
膜厚ｄと反射率Rdの関係を示す図、第８図は本発明の第
２の実施例である薄膜生成・処理装置がフォトレジスト
塗布装置で、制御される装置が投影露光装置であるシス
テムの概略構成を示すブロック図、第９図は本発明の第
２の実施例である薄膜生成・処理装置がフォトレジスト
塗布装置で制御される装置が現像装置であるシステムの
概略構成を示すブロック図、第10図は本発明に係わる第
１の実施例の光学特性測定系の実用形態を表すシステム
を示す構成図、第11図はフォトレジストの反射率Ｒとフ
ォトレジストの膜厚ｄ変化との関係を示す図、第12図は
フォトレジストの露光前後の分光スペクトルを示す図、
第13図は光学特性の実用形態の実施例の変形例である斜
方から照明し、斜方で検出するシステムの構成図，第14
図は光学特性の実用形態の実施例の変形例である光学特
性として透過率を測定する場合のシステム構成を示す
図、第15図は本発明に係わる実施例で制御する工程がフ
ォトレジスト塗布工程であるときのシステム構成図、第
16図は本発明に係わる実施例の光学特性測定系を内蔵し
た投影露光装置を示す構成図、第17図は本発明に係わる
実施例のフォトレジスト塗布装置に光学特性測定系を搭
載したシステム構成図、第18図は本発明に係わる実施例
の変形例のフォトレジスト塗布工程と露光量を制御する
機能を持たせたシステム構成図である。 18……ウエハ、26……光源、27……干渉フィルタ 28……シャープカットフィルタ 29,30……シャッタ、31……ダイクロイックミラー 32……アライメント検出系（TVカメラ） 33……光学特性測定器（フォトセンサ） 35……光量測定系、37……最適露光量検出系 38……照明制御系、45……プロセス制御系 49……フォトレジスト塗布装置 56,108……光学特性測定系 57,101,102,103……インターフェイス 58……投影露光装置、104……ウエハ搬送路 107……薄膜生成、処理装置FIG. 1 is a block diagram showing a schematic configuration of a thin film production management system according to a first embodiment of the present invention, and FIG. 2 shows the influence of multiple reflections in a photoresist and a light-transmitting underlayer forming film. FIG. 3, FIG. 3 is a diagram showing a standing wave effect, FIG. 4 is a diagram showing a flow of an exposure process, FIG. 5 is a diagram showing a relationship between exposure energy and a reflectance and a refractive index of a photoresist, and FIG. FIG. 7 is a diagram showing the relationship between the film formation time and the reflectance, FIG. 7 is a diagram showing the relationship between the film thickness d and the reflectance Rd, and FIG. 8 is a thin film generation and processing according to the second embodiment of the present invention. FIG. 9 is a block diagram showing a schematic configuration of a system in which the apparatus is a photoresist coating apparatus and the apparatus to be controlled is a projection exposure apparatus. FIG. 9 shows a thin film forming / processing apparatus according to a second embodiment of the present invention. A block diagram showing a schematic configuration of a system in which the device controlled by the device is a developing device. FIG. 10 is a block diagram showing a system showing a practical embodiment of the optical characteristic measuring system of the first embodiment according to the present invention. FIG. 11 is a diagram showing the reflectance R of the photoresist and the thickness d of the photoresist. Diagram showing the relationship with the change, FIG. 12 is a diagram showing the spectral spectrum before and after exposure of the photoresist,
FIG. 13 is a configuration diagram of a system for illuminating from the oblique direction and detecting the oblique direction, which is a modification of the practical example of the optical characteristics,
FIG. 15 is a diagram showing a system configuration in the case where transmittance is measured as an optical characteristic, which is a modification of the practical embodiment of the optical characteristic. FIG. 15 is a process of controlling a photoresist coating step in the embodiment according to the present invention. System configuration diagram when
FIG. 16 is a configuration diagram showing a projection exposure apparatus incorporating an optical property measurement system according to an embodiment of the present invention. FIG. 17 is a system configuration in which an optical property measurement system is mounted on a photoresist coating apparatus according to an embodiment of the present invention. FIG. 18 is a system configuration diagram having a function of controlling a photoresist coating step and an exposure amount according to a modified example of the embodiment according to the present invention. 18 Wafer, 26 Light source, 27 Interference filter 28 Sharp cut filter 29, 30 Shutter, 31 Dichroic mirror 32 Alignment detection system (TV camera) 33 Optical property measuring instrument (Photo sensor) 35: Light intensity measurement system, 37: Optimal exposure amount detection system 38: Illumination control system, 45: Process control system 49: Photoresist coating device 56, 108 Optical characteristic measurement system 57, 101, 102, 103 Interface 58: Projection exposure equipment, 104: Wafer transfer path 107: Thin film generation and processing equipment
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−177623（ＪＰ，Ａ) 特開 昭64−52161（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/027 G03F 7/20────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-60-177623 (JP, A) JP-A-64-52161 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 21/027 G03F 7/20
Claims (22)
上の領域に予め照度のわかっている露光波長の光を照射
してレジストの光学特性の時間的変化を測定し、この測
定結果に基づいてレジストの最適な塗布又はベーク条件
を求め、この最適な塗布又はベーク条件に基いてレジス
トの第２の基板への塗布又はベーク条件を制御して前記
第２の基板を処理し、この塗布又はベーク条件を制御し
て処理された第２の基板を露光することを特徴とする露
光方法。An area on a first substrate such as a semiconductor to which a resist is applied is irradiated with light having an exposure wavelength whose illuminance is known in advance, and a temporal change in optical characteristics of the resist is measured. Based on the optimum coating or baking conditions, the resist is applied to the second substrate or the baking conditions are controlled based on the optimum coating or baking conditions to process the second substrate. Alternatively, an exposure method comprising exposing the processed second substrate while controlling the baking conditions.
記レジストからの光の反射率、又は光の屈折率、又は光
の透過率、又は偏光特性、又は光の吸収係数により測定
することを特徴とする請求項１記載の露光方法。2. The method according to claim 1, wherein the temporal change of the exposure characteristic of the resist is measured by a reflectance of light from the resist, a refractive index of light, a transmittance of light, or a polarization characteristic, or an absorption coefficient of light. The exposure method according to claim 1, wherein:
前記露光波長と異なる光を用いて光学特性の時間的変化
を測定することを特徴とする請求項１記載の露光方法。3. The exposure method according to claim 1, wherein a temporal change in optical characteristics is measured using light having an exposure wavelength and at least one kind of light different from the exposure wavelength.
トの光学特性の変化から測定することを特徴とする請求
項１記載の露光方法。4. The exposure method according to claim 1, wherein the thickness of the resist is measured from a change in optical characteristics of the resist before and after exposure.
域に予め照度のわかっている露光波長の光を照射してレ
ジストの光学特性の時間的変化を測定する測定手段と、
該測定手段によって測定されたレジストの光学特性の時
間的変化に基づいてレジストの最適な塗布又はベーク条
件を求める最適な塗布又はベーク条件算出手段と、該最
適な塗布又はベーク条件算出手段によって算出された最
適な塗布又はベーク条件に基づいてレジストの基板への
塗布又はベーク条件を制御する制御手段と、該制御手段
により塗布又はベーク条件を制御されて塗布又はベーク
処理された基板を露光する露光手段とを備えたことを特
徴とする露光装置。5. A measuring means for irradiating a region on a substrate such as a semiconductor on which a resist is applied with light of an exposure wavelength of which illuminance is known in advance to measure a temporal change in optical characteristics of the resist;
Calculated by the optimum coating or baking condition calculating means for determining the optimum coating or baking condition of the resist based on the temporal change of the optical characteristics of the resist measured by the measuring means, and the optimum coating or baking condition calculating means. Control means for controlling the coating or baking conditions of the resist on the substrate based on the optimum coating or baking conditions, and exposure means for exposing the coated or baked substrate by controlling the coating or baking conditions by the control means. An exposure apparatus comprising:
とを特徴とする請求項５記載の露光装置。6. An exposure apparatus according to claim 5, wherein said control means is a resist coating apparatus.
反射率、又は光の屈折率、又は光の透過率、又は偏光特
性、又は光の吸収係数により測定するように構成したこ
とを特徴とする請求項５記載の露光装置。7. The apparatus according to claim 1, wherein the measuring means is configured to measure the reflectance of the light from the resist, the refractive index of the light, the transmittance of the light, the polarization characteristic, or the absorption coefficient of the light. The exposure apparatus according to claim 5, wherein
も１種類以上の露光波長と異なる光を用いて光学特性の
時間的変化を測定するように構成したことを特徴とする
請求項５記載の露光装置。8. The apparatus according to claim 5, wherein said estimating means is configured to measure a temporal change in optical characteristics using light having an exposure wavelength and light having at least one or more different exposure wavelengths. Exposure equipment.
露光前後のレジストの光学特性の変化から測定すること
を特徴とする請求項５記載の露光装置。9. An exposure apparatus according to claim 5, wherein said measuring means measures the thickness of the resist from a change in optical characteristics of the resist before and after exposure.
薄膜を生成もしくは処理する前に、この基板の第１の光
学特性を測定し、上記基板上に薄膜を生成もしくは処理
中または生成もしくは処理した後、この基板の第２の光
学特性を測定し、上記測定された第１の光学特性に基づ
いて上記測定された第２の光学特性に補正することによ
って生成もしくは処理中または生成もしくは処理した薄
膜の光学特性を正確に求め、この求められた薄膜の光学
特性に基づいて薄膜生成もしくは処理装置の条件を制御
して、基板上に薄膜を生成もしくは処理することを特徴
とする薄膜生産制御方法。10. Before producing or processing a thin film having a light transmission characteristic on a substrate such as a semiconductor, a first optical characteristic of the substrate is measured, and a thin film is produced or processed on or during the production or processing on the substrate. After processing, the second optical property of the substrate is measured and generated or being processed or generated or corrected by correcting the measured second optical property based on the measured first optical property. Thin film production control characterized by accurately determining the optical characteristics of the thin film formed and controlling the conditions of the thin film generation or processing apparatus based on the determined optical characteristics of the thin film to generate or process the thin film on the substrate. Method.
される条件が露光エネルギー量、又はレジスト塗布もし
くはベーク条件、又は現像条件であることを特徴とする
請求項10記載の薄膜生産制御方法。11. The method according to claim 10, wherein the thin film is a photoresist, and the controlled condition is an exposure energy amount, a resist coating or baking condition, or a developing condition.
条件が薄膜成膜条件、又は薄膜エッチング条件、又は薄
膜塗布条件であることを特徴とする請求項10記載の薄膜
生産制御方法。12. The thin film production control method according to claim 10, wherein the thin film is a base thin film, and the controlled conditions are thin film deposition conditions, thin film etching conditions, or thin film application conditions.
光の反射率、又は光の屈折率、又は光の透過率、又は偏
光特性、又は分光透過スペクトル、又は光の吸収係数に
基いて行うことを特徴とする請求項10記載の薄膜生産制
御方法。13. The measurement of the first and second optical characteristics,
11. The thin film production control method according to claim 10, wherein the method is performed based on light reflectance, light refractive index, light transmittance, polarization characteristics, spectral transmission spectrum, or light absorption coefficient.
光学特性の時間的変化に基いて行うことを特徴とする請
求項10記載の薄膜生産制御方法。14. The measurement of the first and second optical characteristics,
11. The method for controlling production of a thin film according to claim 10, wherein the method is performed based on a temporal change in optical characteristics.
露光波長の光と少なくとも１種類以上の露光波長と異な
る光とを用いて行うことを特徴とする請求項10記載の薄
膜生産制御方法。薄膜の膜厚について15. The measurement of the first and second optical characteristics,
11. The thin film production control method according to claim 10, wherein the method is performed using light having an exposure wavelength and light having at least one or more types of light different from the exposure wavelength. About thin film thickness
前記光透過特性を有する薄膜を生産・処理する前と後と
に行い、この薄膜を生成・処理する前と後との光学特性
の変化から前記光透過性を有する薄膜の膜厚を求めるこ
とを特徴とする請求項10記載の薄膜生産制御方法。16. The measurement of the first and second optical characteristics,
Before and after the production and processing of the thin film having the light transmission characteristics, the thin film having the light transmission is determined from the change in the optical characteristics before and after the production and processing of the thin film. 11. The thin film production control method according to claim 10, wherein:
形成された半導体等の基板上の領域に予め照度のわかっ
ている露光波長の光を照射して上記下地層の光学特性を
測定し、上記下地層の上にフォトレジストを塗布した半
導体等の基板上の領域に予め照度のわかっている露光波
長の光を照射してこのフォトレジストの光学特性の時間
的変化を測定し、上記下地層の光学特性と上記フォトレ
ジストの光学特性の時間的変化との測定結果に基づいて
最適露光エネルギー量を求め、この際的露光エネルギー
量を制御してフォトマスク上に描かれたパターンをフォ
トレジストを塗布した基板に露光することを特徴とする
露光方法。17. irradiating a region on a substrate, such as a semiconductor, on which a base layer is formed before applying a photoresist with an exposure wavelength whose illuminance is known in advance, and measuring the optical characteristics of the base layer; A region on a substrate such as a semiconductor in which a photoresist is applied on the underlayer is irradiated with light having an exposure wavelength of which the illuminance is known in advance, and the temporal change in the optical characteristics of the photoresist is measured. The optimal exposure energy amount is obtained based on the measurement results of the optical characteristics of the above and the temporal change of the optical characteristics of the photoresist, and the pattern drawn on the photomask is controlled by controlling the exposure energy amount at this time. An exposure method comprising exposing the coated substrate to light.
形成された半導体等の基板上の領域に予め照度のわかっ
ている露光波長の光を照射して上記下地層の光学特性を
測定し、上記下地層の上にフォトレジストを塗布した半
導体等の基板上の領域に予め照度のわかっている露光波
長の光を照射してこのフォトレジストの光学特性の時間
的変化を測定し、上記下地層の光学特性のフォトレジス
トの光学特性の時間的変化との測定結果に基づいてフォ
トレジストの最適な塗布又はベーク条件を求め、この最
適な塗布又はベーク条件に基づいてフォトレジストの基
板への塗布またはベーク条件を制御して上記基板を塗布
又はベークし、この塗布又はベークされた基板に対して
フォトマスク上に描かれたパターンを露光することを特
徴とする露光方法。18. A method of manufacturing a semiconductor device comprising: a substrate having a base layer formed thereon before applying a photoresist; A region on a substrate such as a semiconductor in which a photoresist is applied on the underlayer is irradiated with light having an exposure wavelength of which the illuminance is known in advance, and the temporal change in the optical characteristics of the photoresist is measured. Determine the optimal application or baking conditions of the photoresist based on the measurement results with the temporal change of the optical characteristics of the photoresist of the optical characteristics, and apply or apply the photoresist to the substrate based on the optimal application or baking conditions. An exposure method, wherein the substrate is coated or baked by controlling baking conditions, and a pattern drawn on a photomask is exposed on the coated or baked substrate.
の上記薄膜を処理する前の第１の光学特性を測定する第
１の測定手段と、上記基板上に生成した薄膜を処理する
薄膜処理手段と、該薄膜処理手段により処理した後の上
記薄膜の第２の光学特性を測定する第２の測定手段と、
前記第１の光学特性に基いて前記第２の光学特性を補正
してこの補正した第２の光学特性に基づいて上記処理し
た後の薄膜の光学特性を求める算出手段と、上記算出手
段により求められた薄膜の光学特性に基づいて前記薄膜
処理手段の処理条件を制御する制御手段とを備えたこと
を特徴とする薄膜生産制御装置。19. A first measuring means for measuring first optical characteristics of a substrate on which a thin film having light transmission characteristics has been formed before processing the thin film, and a thin film processing for processing the thin film formed on the substrate. Means, and second measuring means for measuring a second optical property of the thin film after being processed by the thin film processing means;
Calculating means for correcting the second optical property based on the first optical property and obtaining the optical property of the thin film after the processing based on the corrected second optical property; Control means for controlling the processing conditions of the thin film processing means based on the optical characteristics of the thin film obtained.
の基板上の領域に予め照度のわかっている露光波長の光
を照射して下地層の光学特性を測定するとともにフォト
レジストを塗布した後の半導体等の基板上の領域に予め
照度のわかっている露光波長の光を照射してこのフォト
レジストの光学特性の時間的変化を測定する測定手段
と、該測定手段によって測定された下地層の光学特性と
フォトレジストの光学特性の時間的変化に基づいて最適
露光エネルギー量を求める最適露光エネルギー量算出手
段と、該最適露光エネルギー量算出手段により算出され
た最適露光エネルギー量に基づいて露光エネルギー量を
制御する制御手段と、該制御手段により露光エネルギー
量が制御された露光光によりフォトマスク上に描かれた
パターンをフォトレジストが塗布された基板上に露光す
る露光手段とを備えたことを特徴とする露光装置。20. A method for measuring the optical characteristics of an underlayer by irradiating a region on a substrate such as a semiconductor before applying a photoresist with light of an exposure wavelength of which illuminance is known in advance and applying the photoresist after applying the photoresist. A measuring means for irradiating a region on a substrate such as a semiconductor with light of an exposure wavelength of which the illuminance is known in advance to measure a temporal change in optical characteristics of the photoresist; and an optical system of an underlayer measured by the measuring means. Means for calculating an optimum exposure energy amount based on a temporal change in characteristics and optical characteristics of the photoresist; and an exposure energy amount based on the optimum exposure energy amount calculated by the optimum exposure energy amount calculating means. Control means for controlling the image forming apparatus, and a pattern formed on the photomask by the exposure light whose exposure energy amount is controlled by the control means. Exposure apparatus characterized by strike and a exposing means for exposing onto a substrate coated.
開閉を制御する手段を有することを特徴とする請求項20
記載の露光装置。21. The apparatus according to claim 20, wherein said control means includes means for controlling opening and closing of a shutter of an illumination optical system.
Exposure apparatus according to the above.
の基板上の領域に予め照度のわかっている露光波長の光
を照射して下地層の光学特性を測定するとともにフォト
レジストを塗布した半導体等の基板上の領域に予め照度
のわかっている露光波長の光を照射してこのフォトレジ
ストの光学特性の時間的変化とを測定する測定手段と、
該測定手段によって測定された下地層の光学特性とフォ
トレジストの光学特性の時間的変化に基づいてフォトレ
ジストの最適な塗布またはベーク条件を求める最適な塗
布またはベーク条件算出手段と、該最適な塗布またはベ
ーク条件算出手段によって算出された最適な塗布又はベ
ーク条件に基づいてフォトレジストの基板への塗布また
はベーク条件を制御する制御手段と、該制御手段により
制御された基板に対してフォトマスク上に描かれたパタ
ーンを露光する露光手段とを備えたことを特徴とする露
光装置。22. A semiconductor or the like coated with a photoresist while irradiating a region on the substrate such as a semiconductor before applying the photoresist with light having an exposure wavelength of which illuminance is known in advance to measure the optical characteristics of the underlying layer. Measuring means for irradiating light of an exposure wavelength whose illuminance is known in advance to an area on the substrate to measure a temporal change in optical characteristics of the photoresist,
An optimal coating or baking condition calculating means for obtaining an optimal coating or baking condition of the photoresist based on a temporal change in the optical characteristics of the underlayer and the optical characteristics of the photoresist measured by the measuring device; Or a control means for controlling the application or baking conditions of the photoresist on the substrate based on the optimum coating or baking conditions calculated by the baking condition calculation means, and a photomask on the substrate controlled by the control means. An exposure apparatus comprising: an exposure unit that exposes a drawn pattern.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2096443A JP2796404B2 (en) | 1989-04-14 | 1990-04-13 | Exposure method and apparatus, and thin film production control method and apparatus using the same |
| EP90119400A EP0451329B1 (en) | 1990-04-13 | 1990-10-10 | Controlling method of the thickness of a thin film when forming that film |
| DE69032005T DE69032005T2 (en) | 1990-04-13 | 1990-10-10 | Method for controlling the thickness of a thin film during its manufacture |
| US08/077,896 US5409538A (en) | 1990-04-13 | 1993-06-16 | Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method |
| US08/392,196 US5747201A (en) | 1990-04-13 | 1995-02-22 | Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-92830 | 1989-04-14 | ||
| JP9283089 | 1989-04-14 | ||
| JP2096443A JP2796404B2 (en) | 1989-04-14 | 1990-04-13 | Exposure method and apparatus, and thin film production control method and apparatus using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0348419A JPH0348419A (en) | 1991-03-01 |
| JP2796404B2 true JP2796404B2 (en) | 1998-09-10 |
Family
ID=26434205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2096443A Expired - Lifetime JP2796404B2 (en) | 1989-04-14 | 1990-04-13 | Exposure method and apparatus, and thin film production control method and apparatus using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2796404B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5216487A (en) * | 1991-05-22 | 1993-06-01 | Site Services, Inc. | Transmissive system for characterizing materials containing photoreactive constituents |
| JPH06267813A (en) * | 1993-03-10 | 1994-09-22 | Hitachi Ltd | Exposure-pattern forming apparatus |
| EP0973068A3 (en) * | 1998-07-14 | 2001-05-30 | Nova Measuring Instruments Limited | Method and system for controlling the photolithography process |
| JP2008053464A (en) * | 2006-08-24 | 2008-03-06 | Tokyo Electron Ltd | Applicator and developer, resist pattern formation apparatus, application and development method, method of forming resist pattern, and storage medium |
-
1990
- 1990-04-13 JP JP2096443A patent/JP2796404B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0348419A (en) | 1991-03-01 |
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