JPH06267813A - Exposure-pattern forming apparatus - Google Patents
Exposure-pattern forming apparatusInfo
- Publication number
- JPH06267813A JPH06267813A JP5048909A JP4890993A JPH06267813A JP H06267813 A JPH06267813 A JP H06267813A JP 5048909 A JP5048909 A JP 5048909A JP 4890993 A JP4890993 A JP 4890993A JP H06267813 A JPH06267813 A JP H06267813A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- parameter
- exposure
- resist
- pattern forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置等の製造方法
に係り、とくに半導体装置等の量産時のレジスト塗布か
ら露光・現像に至るフォトリソグラフィ工程を改善化す
る露光パターン形成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device or the like, and more particularly to an exposure pattern forming apparatus for improving the photolithography process from resist coating to exposure / development during mass production of semiconductor devices.
【０００２】[0002]
【従来の技術】半導体装置の高集積化による露光パター
ン線幅寸法の微細化に伴い、フォトリソグラフィ工程中
の各製造装置のパラメータを定期的に調整する従来のオ
ープンループ制御法では線幅寸法を常に所定の許容値内
にたもつことが困難となっている。上記装置パラメータ
とは例えばレジスト塗布装置のウェハ回転速度、ウェハ
回転時間などの動作指令値のことである。特開昭６３−
１４８６３３号公報には、レジスト塗布装置においてレ
ジスト膜の表面反射率の測定してウェハ回転速度とウェ
ハ回転時間とを制御するする方法が開示されている。2. Description of the Related Art With the miniaturization of the line width dimension of an exposure pattern due to the high integration of semiconductor devices, the line width dimension is reduced by the conventional open loop control method in which the parameters of each manufacturing apparatus are regularly adjusted during the photolithography process. It is always difficult to keep within a predetermined tolerance. The above-mentioned apparatus parameters are operation command values such as the wafer rotation speed and the wafer rotation time of the resist coating apparatus. JP 63-
Japanese Patent No. 148633 discloses a method of controlling the wafer rotation speed and wafer rotation time by measuring the surface reflectance of a resist film in a resist coating apparatus.
【０００３】[0003]
【発明が解決しようとする課題】しかし、最近のように
露光パターン線幅寸法の許容誤差がサブ・サブミクロン
のオーダに達すると、上記表面反射率の測定によるレジ
スト塗布装置の制御だけでは、線幅寸法を十分に安定化
できないという問題があった。また、現在のフォトリソ
グラフィ工程では焼き付けた露光回路パターンの線幅を
実測しているが、これが許容誤差内に入らない場合に工
程内のどの装置が不良の原因となっているか特定でき
ず、さらに不良装置の異常動作をリアルタイムで監視で
きないという問題があった。本発明の目的は上記の問題
を改善した露光パターン形成装置を提供することにあ
る。However, when the tolerance of the line width dimension of the exposure pattern reaches the order of sub-submicron as in the recent years, the line coating can be controlled only by controlling the resist coating apparatus by measuring the surface reflectance. There is a problem that the width dimension cannot be sufficiently stabilized. Also, in the current photolithography process, the line width of the printed exposure circuit pattern is actually measured, but if this does not fall within the tolerance, it is not possible to identify which device in the process is causing the defect. There is a problem that the abnormal operation of the defective device cannot be monitored in real time. An object of the present invention is to provide an exposure pattern forming apparatus that solves the above problems.
【０００４】[0004]
【課題を解決するための手段】上記課題を解決するため
に、レジスト膜特性を測定するレジスト膜測定装置とレ
ジスト塗布、ベ−ク、露光、現像等の各工程装置のパラ
メ−タを修正する手段を設け、各工程毎のレジスト膜測
定装置の測定結果に応じて当該工程装置のパラメ−タを
修正するようにする。また、各工程毎のレジスト膜測定
装置の測定結果に応じて当該工程以降の工程装置のパラ
メ−タを修正するようにする。In order to solve the above problems, the parameters of the resist film measuring device for measuring the resist film characteristics and each process device such as resist coating, baking, exposure and development are corrected. Means are provided to correct the parameters of the process apparatus according to the measurement result of the resist film measuring apparatus for each process. Further, the parameters of the process devices after the process are corrected according to the measurement result of the resist film measuring device for each process.
【０００５】また、各工程毎のレジスト膜測定装置の測
定結果に応じて当該工程とその工程以降の工程装置のパ
ラメ−タを修正するようにする。また、各工程装置のパ
ラメ−タ制御部に各工程装置の基準パラメ−タ表を記憶
させるようにする。また、レジスト膜測定装置はレジス
ト膜の厚み、屈折率、光吸収係数等を測定し、さらにこ
れを露光波長を含む所定幅の波長範囲内の測定光により
測定するようにする。Further, the parameters of the process and process devices after the process are corrected according to the measurement result of the resist film measuring device for each process. Further, the parameter control section of each process apparatus is made to store the reference parameter table of each process apparatus. Further, the resist film measuring device measures the thickness, the refractive index, the light absorption coefficient, etc. of the resist film, and further measures this with measuring light within a wavelength range of a predetermined width including the exposure wavelength.
【０００６】また、レジスト膜測定装置はレジスト塗布
工程後に測定したレジスト膜の厚みが所定範囲から外れ
る場合に、上記レジスト膜の厚み値を次ぎのベ−ク工程
のパラメ−タ制御部に送り、これに応じて当該パラメ−
タ制御部はベ−ク工程条件を修正するようにする。Further, when the thickness of the resist film measured after the resist coating process is out of a predetermined range, the resist film measuring device sends the thickness value of the resist film to the parameter control unit of the next baking process, According to this, the parameter
The controller controls the baking process conditions.
【０００７】[0007]
【作用】レジスト膜測定装置によるウエハのレジスト膜
特性の測定結果をみて当該工程装置のパラメ−タを修正
するので、各工程装置のパラメ−タ変動が自動的に修正
される。また、上記測定結果に応じて当該工程以降の工
程装置のパラメ−タを修正するので、規格外れのウエハ
の特性は当該工程以降の工程装置により修正される。Since the parameter of the process equipment is corrected by looking at the measurement result of the resist film characteristic of the wafer by the resist film measuring equipment, the parameter fluctuation of each process equipment is automatically corrected. Further, since the parameters of the process apparatus after the process are corrected according to the measurement result, the characteristic of the nonstandard wafer is corrected by the process device after the process.
【０００８】また、上記測定結果に応じて当該工程とそ
の工程以降の工程装置のパラメ−タを修正することによ
り、パラメ−タ変動を生じた工程装置を補正すると同時
に規格外れのウエハの特性を当該工程以降の工程装置に
より修正する。また、正常時には各工程装置のパラメ−
タ制御部が記憶する基準パラメ−タ表によりウエハが加
工される。Further, by correcting the parameters of the process concerned and the process devices after the process in accordance with the above-mentioned measurement result, the process device having the parameter fluctuation is corrected and at the same time, the characteristic of the non-standard wafer is corrected. It is corrected by the process device after the process. Also, when normal, the parameters of each process device
The wafer is processed according to the reference parameter table stored in the data controller.
【０００９】また、露光波長を含む所定幅の波長範囲内
の測定光によりレジスト膜の厚み、屈折率、光吸収係数
等を測定することにより、加工前と加工後のウエハ特性
の差違が感度よく検出される。また、レジスト塗布工程
後のレジスト膜の測定値に応じて当該レジスト膜の厚み
が次ぎのベ−ク工程で修正される。Further, by measuring the thickness of the resist film, the refractive index, the light absorption coefficient and the like with the measuring light within a wavelength range of a predetermined width including the exposure wavelength, the difference in the wafer characteristics before and after the processing is sensitive. To be detected. Further, the thickness of the resist film is corrected in the next baking process according to the measured value of the resist film after the resist coating process.
【００１０】[0010]
〔実施例 １〕図１はレジストの塗布から現像に至るフ
ォトリソグラフィ工程に関わる本発明の露光回路パター
ン線幅寸法安定化装置の信号系統図である。図１におい
て、フォトリソグラフィ工程にはレジスト塗布装置１、
ベーク装置２、露光装置３、ベーク装置、現像装置５、
ベーク装置６等が含まれる。なお、実線はウェハの流れ
を、点線は情報の流れを示している。[Embodiment 1] FIG. 1 is a signal system diagram of an exposure circuit pattern line width dimension stabilizing device of the present invention relating to a photolithography process from resist coating to development. In FIG. 1, in the photolithography process, a resist coating device 1,
Bake device 2, exposure device 3, bake device, developing device 5,
A baking device 6 and the like are included. The solid line shows the flow of the wafer and the dotted line shows the flow of information.
【００１１】まず、フォトリソグラフィ工程中の各装置
のパラメータとレジスト膜特性値との関係を予め測定し
て表にし、各表をそれぞれ装置毎のパラメータ制御部１
１〜１６内に格納しておく。図２はレジスト塗布装置１
１のパラメータ制御部１１の構成を示すブロック図であ
る。他のパラメータ制御部１２〜１６等も同様な構成を
有し、同様に制御されるので、ここではレジスト塗布装
置１とそのパラメータ制御部１１の動作について説明す
る。First, the relationship between the parameters of each device and the resist film characteristic values during the photolithography process is measured in advance and made into a table, and each table is provided with a parameter controller 1 for each device.
It is stored in 1 to 16. FIG. 2 shows a resist coating apparatus 1
It is a block diagram which shows the structure of the parameter control part 11 of 1. Since the other parameter control units 12 to 16 and the like have the same configuration and are controlled in the same manner, the operation of the resist coating apparatus 1 and its parameter control unit 11 will be described here.
【００１２】レジスト塗布装置１１を通過したウエハの
レジスト膜特性値はレジスト膜測定装置７により測定さ
れる。この測定値が所定値と異なる場合、あるいは所定
の範囲内から外れる場合にはこの測定値４１をパラメー
タ制御部５１に転送する。これに応じてパラメータ制御
部５１はデータ記憶部６１の表を用いてレジストの状態
変化量を算出し、塗布装置１のパラメータを修正する。
この結果、次ぎのウエハのレジスト塗布条件を適正化す
ることができる。The resist film characteristic value of the wafer that has passed through the resist coating device 11 is measured by the resist film measuring device 7. If the measured value is different from the predetermined value or is out of the predetermined range, the measured value 41 is transferred to the parameter control unit 51. In response to this, the parameter control unit 51 uses the table of the data storage unit 61 to calculate the resist state change amount, and corrects the parameters of the coating apparatus 1.
As a result, the resist coating conditions for the next wafer can be optimized.
【００１３】例えば、レジストの膜厚はレジスト塗布装
置１のウエハ回転速度に比例して薄くなるので、レジス
ト膜測定装置７により測定された膜厚が厚過ぎる場合に
は上記ウエハ回転速度を速めるように制御する。ベーク
装置２とパラメータ制御部１２、露光装置３とパラメー
タ制御部１３、ベーク装置４とパラメータ制御部１
４、、現像装置５とパラメータ制御部１５、ベーク装置
６とパラメータ制御部１６等の関係も同様である。以上
の制御により、各装置１〜６の製造条件のドリフトを補
償できるのでウエハのレジスト膜を安定化して露光回路
パターンの線幅寸法誤差を低減することができる。For example, since the film thickness of the resist becomes thin in proportion to the wafer rotation speed of the resist coating apparatus 1, if the film thickness measured by the resist film measuring apparatus 7 is too thick, the wafer rotation speed should be increased. To control. Bake device 2 and parameter control unit 12, exposure device 3 and parameter control unit 13, bake device 4 and parameter control unit 1
4, the relationship between the developing device 5 and the parameter control unit 15, the bake device 6 and the parameter control unit 16 and the like is the same. By the above control, the drift of the manufacturing conditions of each of the devices 1 to 6 can be compensated, so that the resist film on the wafer can be stabilized and the line width dimension error of the exposure circuit pattern can be reduced.
【００１４】〔実施例 ２〕上記実施例１では特性値が
所定の範囲内から外れたウエハの測定値を用いてその次
からのウエハの特性値を修正するようにしていたので、
当該ウエハは救済できなかった。本実施例では、上記ウ
エハの特性値を次ぎの工程で修正するようにして、始め
の工程で規格外と判定されたウエハを救済し、連続的に
良品ウエハが得られるようにする。[Embodiment 2] In Embodiment 1, the characteristic values of the next wafer are corrected using the measured values of the wafer whose characteristic values are out of the predetermined range.
The wafer could not be salvaged. In the present embodiment, the characteristic value of the wafer is corrected in the next step so that the wafer determined to be out of the standard in the first step is relieved so that non-defective wafers can be continuously obtained.
【００１５】図３はベーク装置２のパラメータ制御部１
２のブロック図である。露光装置３とパラメータ制御部
１３、ベーク装置４とパラメータ制御部１４、現像装置
５とパラメータ制御部１５も同様に構成される。レジス
ト膜特性値測定装置７はレジスト塗布装置１を通過した
ウエハのレジスト膜厚測定値が過大または過少な場合に
はこの測定値４２を次ぎの工程のパラメータ制御部１２
内のパラメータ決定部５２に送る。FIG. 3 shows the parameter control unit 1 of the baking device 2.
2 is a block diagram of FIG. The exposure device 3 and the parameter control unit 13, the bake device 4 and the parameter control unit 14, and the developing device 5 and the parameter control unit 15 are similarly configured. The resist film characteristic value measuring device 7 uses the measured value 42 when the measured resist film thickness of the wafer passing through the resist coating device 1 is too large or too small.
And sends it to the parameter determining unit 52.
【００１６】パラメータ制御部１２は上記レジスト膜厚
測定値５２をデ−タ記憶部６２に予め記憶させたベーク
デ−タ表と比較し、ベーク装置２のベーク温度、および
／またはベーク時間を修正する。すなわち、レジスト膜
厚が過大な場合にはベーク温度を高め、あるいはベーク
時間を長くしてレジスト溶媒の蒸発を強めるようにして
ベーク工程後のレジスト膜厚を適正値に修正する。The parameter control unit 12 compares the resist film thickness measurement value 52 with a bake data table stored in the data storage unit 62 in advance, and corrects the baking temperature and / or the baking time of the baking apparatus 2. . That is, when the resist film thickness is excessive, the bake temperature is raised or the bake time is lengthened to enhance the evaporation of the resist solvent, and the resist film thickness after the baking step is corrected to an appropriate value.
【００１７】また、同様な修正を次ぎの露光工程で行う
こともできる。すなわち、パラメータ制御部１３は上記
レジスト工程、またはベーク工程の後にレジスト膜測定
装置７により測定されたレジスト膜の屈折率より光路長
を求めて光の干渉による定在波の大きさを算出する。上
記定在波の大きさにより露光後のパタ−ンの幅が変化す
る。パタ−ンの幅は上記定在波の大きさと露光時間によ
り変わるので、定在波の大きさに応じて露光装置３の露
光量や露光時間を調整し、露光後のパタ−ン幅が所定の
範囲内に納まるようにする。The same correction can be performed in the next exposure step. That is, the parameter control unit 13 obtains the optical path length from the refractive index of the resist film measured by the resist film measuring device 7 after the resist process or the baking process, and calculates the magnitude of the standing wave due to light interference. The width of the pattern after exposure changes depending on the magnitude of the standing wave. Since the width of the pattern changes depending on the magnitude of the standing wave and the exposure time, the exposure amount and the exposure time of the exposure device 3 are adjusted according to the magnitude of the standing wave, and the pattern width after the exposure is predetermined. Be within the range of.
【００１８】また、上記ベ−ク工程と露光工程における
各修正を併せて行うことにより、過大な修正を分散化し
て無理なく実行するようにしてもよい。また、上記露光
後のレジスト膜の光吸収係数からレジスト状態を判断で
きるので、このデ−タを基にして次ぎのベ−ク装置４の
ベ−ク時間や同温度を調整することもできる。Further, it is also possible to disperse excessive corrections and execute them without difficulty by performing the corrections in the baking process and the exposure process together. Since the resist state can be determined from the light absorption coefficient of the resist film after the exposure, the baking time and the temperature of the next baking device 4 can be adjusted based on this data.
【００１９】また、図１における最終のベ−ク工程以後
は上記レジスト膜の測定による特性修正ができないの
で、図４に示すようにパラメータ制御部１６にはその前
の現像工程の測定結果４５’のみが入力される。以上に
より、本発明ではレジスト膜特性値のずれが発見された
工程の後の工程で修正することができるので、従来、工
程毎の特性測定により不良としてはねられていたウエハ
を救済することができ、良品ウエハを連続的に生産する
ことができる。Further, after the final baking step in FIG. 1, since the characteristic modification by the measurement of the resist film cannot be performed, the parameter control unit 16 has the measurement result 45 'in the previous developing step as shown in FIG. Only entered. As described above, according to the present invention, since the deviation of the resist film characteristic value can be corrected in the step after the step in which the deviation is found, it is possible to remedy the wafer which has hitherto been rejected by the characteristic measurement in each step. Therefore, non-defective wafers can be continuously produced.
【００２０】〔実施例 ３〕図５は図１に示した本発明
の装置の各製造装置内にそれぞれのレジスト膜測定部と
パラメータ制御部を一体に組み込んだものである。これ
によりウェハの搬送距離及び搬送時間を短縮することが
でき生産効率を向上することができる。[Embodiment 3] FIG. 5 shows that the resist film measuring unit and the parameter control unit are integrally incorporated in each manufacturing apparatus of the apparatus of the present invention shown in FIG. As a result, the transfer distance and transfer time of the wafer can be shortened and the production efficiency can be improved.
【００２１】次ぎに、レジスト膜特性の測定に用いる光
の波長とレジスト膜測定装置に関する説明を補足する。
レジスト膜特性の測定には露光波長の光、または露
光波長以外の光を用いる場合がある。図６は露光の前と
後のレジストの分光透過率の波長依存性を示すデ−タで
ある。なお、上記分光透過率とレジストの光吸収係数は
一対一に対応するので分光透過率の代わりに光吸収係数
を用いてもよい。Next, a supplementary explanation will be given regarding the wavelength of light used for measuring the resist film characteristics and the resist film measuring device.
Light having an exposure wavelength or light other than the exposure wavelength may be used to measure the resist film characteristics. FIG. 6 is data showing the wavelength dependence of the spectral transmittance of the resist before and after exposure. Since the spectral transmittance and the light absorption coefficient of the resist have a one-to-one correspondence, the light absorption coefficient may be used instead of the spectral transmittance.
【００２２】においては露光前と後の分光透過率の差
は露光波長にて最大となるので、分光透過率の測定に露
光波長を用いれば、分光透過率の変化を感度よく捉える
ことができる。この変化はレジストの変化に対応するの
で、これにより露光装置の装置パラメータを精度よく調
整することができる。In the above, since the difference between the spectral transmittances before and after the exposure becomes maximum at the exposure wavelength, if the exposure wavelength is used for the measurement of the spectral transmittance, the change in the spectral transmittance can be detected with high sensitivity. Since this change corresponds to the change in the resist, the device parameters of the exposure apparatus can be adjusted with high accuracy.
【００２３】また、の場合は分光透過率の変化幅が減
少するので、露光装置の上記調整精度が若干低下する。
しかし、レジストに与える測定光の影響も同時に小さく
なるので露光波長光より強い強度の測定光を用いること
ができ、測定値のＳ／Ｎを向上することができる。ま
た、レジスト膜測定装置７には市販のエリプソメータや
分光エリプソメータ等を用いることができる。Further, in the case of (3), since the change width of the spectral transmittance is reduced, the adjustment accuracy of the exposure apparatus is slightly lowered.
However, since the influence of the measuring light on the resist is also reduced at the same time, the measuring light having a higher intensity than the exposure wavelength light can be used, and the S / N of the measured value can be improved. Further, as the resist film measuring device 7, a commercially available ellipsometer, a spectroscopic ellipsometer, or the like can be used.
【００２４】エリプソメータは二つ以上の入射角での測
定が必要であるがレジスト膜の膜厚、屈折率、光吸収係
数の三つのレジスト膜特性値を測定することができる。
また、その光源には通常ヘリウムネオンレーザが用いら
れるが他の波長の光源に交換することもできる。とくに
分光エリプソメータは測定波長範囲が広いという特徴が
ある。また、レジスト膜特性値はウェハのスクライブラ
インやウェハ外周部で測定するようにしてもよい。ま
た、本発明のレジスト膜測定は抜き取り検査とすること
もできる。Although the ellipsometer needs to measure at two or more incident angles, it can measure three resist film characteristic values such as the film thickness of the resist film, the refractive index, and the light absorption coefficient.
A helium neon laser is usually used as the light source, but it can be replaced with a light source having another wavelength. In particular, the spectroscopic ellipsometer is characterized by a wide measurement wavelength range. Further, the resist film characteristic value may be measured at the scribe line of the wafer or at the outer peripheral portion of the wafer. Further, the resist film measurement of the present invention may be a sampling inspection.
【００２５】[0025]
【発明の効果】本発明による露光パターン線幅寸法安定
化装置では、ウエハにレジスト膜を形成する各工程毎で
レジスト膜の特性値を測定して対応する工程のパラメ−
タを修正するので、レジスト工程を常に適正化して歩留
まりを向上することができる。また、所定の許容値範囲
から外れたウエハの測定値を用いてその次の工程でウエ
ハの特性値を修正してこのウエハを救済するようにする
ので、良品ウエハを連続的に得ることができる。また、
上記レジスト工程の安定化により、露光された回路パタ
ーンの線幅寸法を微細化することができる。In the exposure pattern line width dimension stabilizing apparatus according to the present invention, the characteristic value of the resist film is measured in each step of forming the resist film on the wafer, and the parameter of the corresponding step is measured.
Since the data is corrected, it is possible to always optimize the resist process and improve the yield. Further, since the measured value of the wafer which is out of the predetermined allowable value range is used to correct the characteristic value of the wafer in the next step to repair this wafer, a non-defective wafer can be continuously obtained. . Also,
By stabilizing the resist process, the line width dimension of the exposed circuit pattern can be miniaturized.
【図１】本発明による露光回路パターン線幅寸法安定化
装置のブロック図である。FIG. 1 is a block diagram of an exposure circuit pattern line width dimension stabilizing device according to the present invention.
【図２】図１におけるレジスト塗布装置用のパラメータ
制御部のブロック図である。FIG. 2 is a block diagram of a parameter control unit for the resist coating apparatus in FIG.
【図３，４】図１におけるベーク装置用のパラメータ制
御部のブロック図である。3 and 4 are block diagrams of a parameter control unit for the baking device in FIG. 1.
【図４】本発明の第一の実施例に係る露光装置用装置パ
ラメータ制御部の内部構成を示す図である。FIG. 4 is a diagram showing an internal configuration of an apparatus parameter control unit for an exposure apparatus according to the first embodiment of the present invention.
【図５】本発明による他の露光回路パターン線幅寸法安
定化装置のブロック図である。FIG. 5 is a block diagram of another exposure circuit pattern line width dimension stabilizing device according to the present invention.
【図６】レジスト膜の分光透過率特性図である。FIG. 6 is a spectral transmittance characteristic diagram of a resist film.
１…レジスト塗布装置、２、４、６…ベーク装置、３…
露光装置、５…現像装置、７…レジスト膜測定装置、１
１〜１６…パラメータ制御部、５１、５２、５６…パラ
メータ決定部、６１、６２、６６…データ記憶部1 ... Resist coating device, 2, 4, 6 ... Baking device, 3 ...
Exposure device, 5 ... Developing device, 7 ... Resist film measuring device, 1
1 to 16 ... Parameter control unit, 51, 52, 56 ... Parameter determination unit, 61, 62, 66 ... Data storage unit
───────────────────────────────────────────────────── フロントページの続き (72)発明者 窪田 仁志 神奈川県横浜市戸塚区吉田町292番地 株 式会社日立製作所生産技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hitoshi Kubota, 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa Prefecture
Claims (7)
各工程毎のパラメ−タ制御部の指令値により上記各工程
装置のパラメ−タを設定して半導体装置等のレジスト膜
を形成する露光パターン形成装置において、レジスト膜
特性を測定するレジスト膜測定装置と上記各工程装置の
パラメ−タ制御部はそれぞれのパラメ−タを修正する手
段を備え、各工程毎のレジスト膜測定装置の測定結果に
応じて当該工程装置のパラメ−タを修正するようにした
ことを特徴とする露光パターン形成装置。1. A resist film for a semiconductor device or the like is formed by setting the parameters of each of the above process devices according to a command value of a parameter control unit for each process such as resist coating, baking, exposure and development. In the exposure pattern forming apparatus, the resist film measuring device for measuring the resist film characteristics and the parameter control unit of each of the above process devices are provided with means for correcting each parameter, and the resist film measuring device for each process is An exposure pattern forming apparatus, wherein a parameter of the process apparatus is corrected according to a measurement result.
各工程毎のパラメ−タ制御部の指令値により上記各工程
装置のパラメ−タを設定して半導体装置等のレジスト膜
を形成する露光パターン形成装置において、レジスト膜
特性を測定するレジスト膜測定装置と上記各工程装置の
パラメ−タ制御部毎のパラメ−タ修正手段とを備え、各
工程毎のレジスト膜測定装置の測定結果に応じて当該工
程以降の工程装置のパラメ−タを修正するようにしたこ
とを特徴とする露光パターン形成装置。2. A resist film for a semiconductor device or the like is formed by setting the parameters of each of the above process devices according to a command value of a parameter control unit for each process such as resist coating, baking, exposure and development. In the exposure pattern forming apparatus, the resist film measuring device for measuring the resist film characteristics and the parameter correcting means for each parameter control unit of each of the above process devices are provided, and the measurement result of the resist film measuring device for each process The exposure pattern forming apparatus is characterized in that the parameters of the process device after the process are corrected according to the above.
各工程毎のパラメ−タ制御部の指令値により上記各工程
装置のパラメ−タを設定して半導体装置等のレジスト膜
を形成する露光パターン形成装置において、レジスト膜
特性を測定するレジスト膜測定装置と上記各工程装置の
パラメ−タ制御部毎のパラメ−タ修正手段とを備え、各
工程毎のレジスト膜測定装置の測定結果に応じて当該工
程とその工程以降の工程装置のパラメ−タを修正するよ
うにしたことを特徴とする露光パターン形成装置。3. A resist film for a semiconductor device or the like is formed by setting the parameters of each process apparatus according to command values of a parameter control unit for each process such as resist coating, baking, exposure and development. In the exposure pattern forming apparatus, the resist film measuring device for measuring the resist film characteristics and the parameter correcting means for each parameter control unit of each of the above process devices are provided, and the measurement result of the resist film measuring device for each process The exposure pattern forming apparatus is characterized in that the parameters of the process and process devices after the process are corrected according to the above.
各工程装置のパラメ−タ制御部は各工程装置の基準パラ
メ−タ表を記憶する手段を備えたことを特徴とする露光
パターン形成装置。4. The method according to any one of claims 1 to 3,
The exposure pattern forming apparatus, wherein the parameter control unit of each process apparatus has means for storing a reference parameter table of each process apparatus.
レジスト膜測定装置はレジスト膜の厚み、屈折率、光吸
収係数等を測定するようにしたことを特徴とする露光パ
ターン形成装置。5. The method according to any one of claims 1 to 4,
The resist film measuring device is an exposure pattern forming device characterized by measuring the thickness, refractive index, light absorption coefficient, etc. of the resist film.
レジスト膜測定装置はレジスト膜の厚み、屈折率、光吸
収係数等を露光波長を含む所定幅の波長範囲内の測定光
により測定するようにしたことを特徴とする露光パター
ン形成装置。6. The method according to any one of claims 1 to 5,
The resist film measuring apparatus is an exposure pattern forming apparatus characterized in that the thickness, refractive index, light absorption coefficient, etc. of the resist film are measured by measuring light within a wavelength range of a predetermined width including the exposure wavelength.
はレジスト塗布工程後に測定したレジスト膜の厚みが所
定範囲から外れる場合に、上記レジスト膜の厚み値を次
ぎのベ−ク工程のパラメ−タ制御部に送り、これに応じ
て当該パラメ−タ制御部はベ−ク工程条件を修正するよ
うにしたことを特徴とする露光パターン形成装置。7. The resist film measuring apparatus according to claim 2, wherein when the thickness of the resist film measured after the resist coating step is out of a predetermined range, the thickness value of the resist film is set as a parameter of the next baking step. The exposure pattern forming apparatus is characterized in that the parameter control section is adapted to correct the baking process condition in response to the control section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5048909A JPH06267813A (en) | 1993-03-10 | 1993-03-10 | Exposure-pattern forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5048909A JPH06267813A (en) | 1993-03-10 | 1993-03-10 | Exposure-pattern forming apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06267813A true JPH06267813A (en) | 1994-09-22 |
Family
ID=12816390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5048909A Pending JPH06267813A (en) | 1993-03-10 | 1993-03-10 | Exposure-pattern forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06267813A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4820907A (en) * | 1986-12-11 | 1989-04-11 | Dainippon Screen Mfg. Co., Ltd. | Controlled furnace heat treatment |
| JP2000114166A (en) * | 1998-07-14 | 2000-04-21 | Nova Measuring Instruments Ltd | Device and method for working substrate according to prescribed photolithographic process |
| JP2000223413A (en) * | 1998-07-14 | 2000-08-11 | Nova Measuring Instr Ltd | Method and system for controlling photolithography process |
| JP2008153661A (en) * | 2006-12-15 | 2008-07-03 | Tokyo Electron Ltd | Method of measuring process parameter of semiconductor fabrication process using optical measurement |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63227020A (en) * | 1987-03-17 | 1988-09-21 | Toshiba Corp | Semiconductor device manufacturing equipment |
| JPH02146720A (en) * | 1988-07-29 | 1990-06-05 | Tokyo Electron Ltd | Manufacture of semiconductor device |
| JPH0348419A (en) * | 1989-04-14 | 1991-03-01 | Hitachi Ltd | Method and system for controlling production of thin film and method and system for exposure |
| JPH0387014A (en) * | 1989-05-25 | 1991-04-11 | Motorola Inc | Optimizing method for photoresist contrast |
| JPH0435018A (en) * | 1990-05-31 | 1992-02-05 | Sony Corp | Photoresist coating means |
| JPH0536580A (en) * | 1991-07-26 | 1993-02-12 | Sumitomo Metal Ind Ltd | Setting method of exposure time for semiconductor aligner |
-
1993
- 1993-03-10 JP JP5048909A patent/JPH06267813A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63227020A (en) * | 1987-03-17 | 1988-09-21 | Toshiba Corp | Semiconductor device manufacturing equipment |
| JPH02146720A (en) * | 1988-07-29 | 1990-06-05 | Tokyo Electron Ltd | Manufacture of semiconductor device |
| JPH0348419A (en) * | 1989-04-14 | 1991-03-01 | Hitachi Ltd | Method and system for controlling production of thin film and method and system for exposure |
| JPH0387014A (en) * | 1989-05-25 | 1991-04-11 | Motorola Inc | Optimizing method for photoresist contrast |
| JPH0435018A (en) * | 1990-05-31 | 1992-02-05 | Sony Corp | Photoresist coating means |
| JPH0536580A (en) * | 1991-07-26 | 1993-02-12 | Sumitomo Metal Ind Ltd | Setting method of exposure time for semiconductor aligner |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4820907A (en) * | 1986-12-11 | 1989-04-11 | Dainippon Screen Mfg. Co., Ltd. | Controlled furnace heat treatment |
| JP2000114166A (en) * | 1998-07-14 | 2000-04-21 | Nova Measuring Instruments Ltd | Device and method for working substrate according to prescribed photolithographic process |
| JP2000223413A (en) * | 1998-07-14 | 2000-08-11 | Nova Measuring Instr Ltd | Method and system for controlling photolithography process |
| JP4722244B2 (en) * | 1998-07-14 | 2011-07-13 | ノバ・メジャリング・インストルメンツ・リミテッド | Apparatus for processing a substrate according to a predetermined photolithography process |
| JP2008153661A (en) * | 2006-12-15 | 2008-07-03 | Tokyo Electron Ltd | Method of measuring process parameter of semiconductor fabrication process using optical measurement |
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