WO2008023693A1

WO2008023693A1 - Coating developing machine, resist pattern forming device, coating developing method, resist pattern forming method, and storage medium

Info

Publication number: WO2008023693A1
Application number: PCT/JP2007/066174
Authority: WO
Inventors: Ryouichirou Naitou; Tsuyoshi Shibata
Original assignee: Tokyo Electron Limited
Priority date: 2006-08-24
Filing date: 2007-08-21
Publication date: 2008-02-28
Also published as: TW200811616A; TWI358010B; JP2008053464A

Abstract

A coating developing machine comprises a heating unit for heating a substrate by using a heating plate for heating and controlling the heating independently multiple regions to be heated by heaters, an optical measuring unit for measuring optical properties of each region by applying light to the region corresponding to each region to be heated of the substrate before the substrate is coated with a resist liquid, a storage section storing the correlation between the predetermined optical properties of the base film of the substrate, the heater heating temperature, and the line width of the resist pattern, and a control section for calculating the heater heating temperature for each region to be heated according to the optical properties of the base film of the substrate measured by the optical measuring unit, the target line width of the resist pattern, and the correlation stored in the storage section and controlling the temperature at each region to be heated of the heating plate according to the calculated heating temperature. According to the invention, the line width of the resist pattern in the surface of the substrate and between the substrate can be controlled with high accuracy.

Description

Specification

Coating and developing apparatus, resist pattern forming apparatus, coating and developing method, resist pattern forming method, and storage medium

Technical field

[0001] The present invention relates to a coating unit that forms a resist film by applying a resist solution to a substrate having a base film formed on the surface, and an image in which a resist pattern is formed by developing the exposed substrate. A resist pattern forming apparatus, a coating and developing method, a resist pattern forming method, and a coating and developing apparatus including a unit; and an exposure apparatus that exposes a substrate after resist coating in addition to the coating unit and the developing unit. The present invention relates to a storage medium storing a computer program for carrying out these methods.

Background art

Conventionally, in a photoresist process which is one of semiconductor manufacturing processes, for example, a resist solution is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer) to form a resist film. After exposing with a pattern, it is developed to create a resist pattern. Such a process is generally performed using a resist pattern forming apparatus in which an exposure apparatus is connected to a coating and developing apparatus for applying and developing a resist.

[0003] The wafer is, for example, on a silicon substrate (bare silicon), various films such as a SiO film and a SiN film for forming wiring on the wafer, and the optical reaction of these various films at the time of exposure.

2

It has a structure in which a base film made of an anti-reflective film that suppresses the effect on the resist pattern due to radiation is laminated. The various films forming the wiring are formed before the wafer is carried into the coating and developing apparatus. In the coating and developing apparatus, the antireflection film and the resist film are formed on the surface of the film forming the wiring from the lower layer to the upper layer. It forms in this order toward.

[0004] The wafer on which the resist film is formed is subjected to an exposure process in an exposure apparatus, and then transferred to a heating unit in a coating image forming apparatus, and subjected to a heating process called PEB (post-exposure baking). The shape of the resist pattern is adjusted by removing the influence of the standing wave received during exposure on the film. After PEB processing, the wafer is transferred to the development unit, where it corresponds to the part exposed by the development processing, or the exposed part. A portion corresponding to the portion that has not been removed is removed to form a resist pattern.

[0005] The wafer heating temperature in the above-described PEB and the exposure amount of the wafer in the exposure process greatly affect the dimensions of the resist pattern to be formed. When a resist film is formed using a chemically amplified resist, an acid catalyst is generated on the surface of the resist film by the exposure process, and the acid catalyst is diffused widely inside the resist by this PEB, affecting the development process. Therefore, the heating temperature of PEB has a greater influence on the pattern dimensions.

[0006] By the way, a demand for miniaturizing a resist pattern is increasing year by year due to a demand for miniaturization of semiconductor products, and it is required to control the dimension (CD) of the resist pattern with high accuracy. When controlling the pattern, there are cases where the processing environment of each part of the coating and developing apparatus is adjusted using a test wafer in which a resist film is directly formed on each flat and uniform silicon substrate without forming a base film. A certain force S, good dimensional control of the pattern is made on this test wafer! / Even when a product with a base film formed on the silicon substrate is carried into a coating and developing apparatus to produce a product In some cases, the dimension (line width) of the pattern varies in each region in the plane of the wafer.

[0007] It is considered that the variation in the dimension of the pattern is related to, for example, the film thickness and density in the base film because of the occurrence of such variations. In other words, since the film quality of the underlying film is different in each region in the surface of the wafer, the influence of each region on the heat treatment and the exposure processing is not uniform, and therefore it is considered that variations in pattern dimensions occur. Variations in film quality such as film thickness and density can be expressed as variations in optical properties because they exhibit different reactions when irradiated to films with varying film quality. The optical properties here are the reflectance and the optical constant, and the factor constituting the optical constant includes the refractive index (n) and the extinction coefficient (k).

[0008] As described above, the base film is usually composed of a multi-layered film and formed after many processes, and even if the variation in each process is fine. As a result of the accumulation of variations when the underlayer is formed, it may appear as a large variation in the optical properties.Therefore, the degree of variation in the optical properties of the underlayer is expected or suppressed. May be difficult.

[0009] At present, the force of increasing the size of wafers to improve throughput S, wafers As the size of the substrate increases, the above-described variations in the optical properties of the underlying film are likely to occur within the surface of the wafer.As a result, the CD variation due to such variations in the underlying film increases, resulting in an increase in yield. May decrease.

In addition, each wafer may be warped by being subjected to various treatments while the base film is formed. This warpage is likely to occur as the wafer becomes larger, and the amount of warpage in each region in the surface may also vary greatly. Due to this warpage, the heating temperature differs for each area in the wafer surface during the PEB, or the distance from the light source differs during exposure, and the exposure beam irradiated to each area in the wafer surface varies. If the energy is different, the dimensions of the pattern may further vary in each area in the plane.

[0011] Note that Patent Document 1 describes a force that describes a method for controlling a resist pattern by changing a heat treatment condition and an exposure process condition based on the optical properties of a base film. It cannot solve pattern variations.

Patent Document 1: JP 2001-332491 A

Disclosure of the invention

Problems to be solved by the invention

The present invention has been made to solve such problems, and an object of the present invention is to form a resist pattern by forming a resist film on a substrate having a base film formed on the surface of the substrate. In this case, the line width of the resist pattern in the plane of the substrate and between the substrates is controlled with high accuracy.

Means for solving the problem

[0013] The coating and developing apparatus of the present invention is a coating and developing apparatus that applies a resist solution to a substrate having a base film formed on the surface, and develops the exposed substrate to form a resist pattern! / And

A heating unit that can independently control heating of a plurality of heating areas by a plurality of heaters, and a heating unit that heats the substrate before development after exposure by the heating plate;

An optical measurement unit that measures the optical properties of each region by irradiating light to the region corresponding to each heating region of the substrate before applying the resist solution; A storage unit storing correlations between optical properties of the base film of the substrate, the heating temperature of the heater, and the line width of the resist pattern obtained in advance;

Based on the optical properties of the base film of the substrate measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage section! /, The heater of each heating area And a controller that controls the temperature of each heating region of the hot plate based on the calculated heating temperature.

[0014] The apparatus further includes, for example, a warp measurement unit for measuring a warp amount of each measurement region of the substrate, and the control unit applies each of the heating regions based on the measured warp amount. A correction value for the heating temperature calculated for the heating plate may be calculated, and the temperature of each heating region of the heating plate may be controlled based on the correction value and the heating temperature. .

In the resist pattern forming apparatus of the present invention, a resist solution is applied to a substrate having a base film formed on the surface, then the substrate is exposed, and the exposed substrate is further developed to form a resist pattern. The resist pattern forming device

An exposure apparatus that can set an exposure amount for each area in which the in-plane surface of the substrate is divided into a plurality of areas, and light is irradiated to areas corresponding to the plurality of areas on the substrate before the resist film is formed. An optical measurement unit for measuring physical properties;

A storage unit in which correlations between optical properties, exposure amounts, and resist pattern line widths, which are obtained in advance, are stored;

An exposure amount is calculated for each region based on the optical properties measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage unit, and the exposure based on the calculated exposure amount And a control unit for controlling the exposure amount of the apparatus.

[0016] The apparatus further includes, for example, a warpage measurement unit that measures a warpage amount of each measurement region of the substrate, and the control unit applies each of the exposure regions based on the measured warpage amount. An exposure correction amount for correcting the exposure amount of the exposure apparatus is calculated, and the exposure amount in each exposure region is controlled based on the exposure correction amount and the calculated exposure amount. Gore.

[0017] The coating and developing method of the present invention includes:

In a coating / developing method in which a resist pattern is formed on a substrate after exposure using a hot plate that can independently control a plurality of heating regions by a plurality of heaters. Irradiating a region corresponding to each heating region of the substrate with light to measure optical properties of each region;

A step of applying a resist solution to the surface of the base film after the optical property measurement to form a resist film;

Exposing the substrate on which the resist film is formed;

Data obtained in advance on the correlation between the optical properties obtained by irradiating the substrate underlayer with light, the heating temperature of the heater and the line width of the resist pattern, and the optical properties of the substrate measured in the previous step And a step of calculating a heating temperature for each heating region based on the target value of the line width of the resist pattern,

A step of controlling heating of each heating region based on the calculated heating temperature;

Developing the heated substrate.

[0018] In this method, for example, a step of measuring the amount of warpage of each measurement area of the substrate, and a correction temperature for correcting the calculated heating temperature is calculated based on the measured amount of warpage. The step of heating the substrate may be negotiated based on the heating temperature and the correction temperature! /.

[0019] The resist pattern forming method of the present invention comprises:

Irradiating each of a plurality of regions in the surface of the base film of the substrate with light, and measuring the optical properties of each region;

Data acquired in advance regarding the correlation between the optical properties obtained by irradiating the substrate underlayer with light, the exposure amount of the exposure apparatus, and the line width of the resist pattern;

Calculating the exposure amount for each region based on the optical properties of the substrate measured in the step and the target value of the line width of the resist pattern;

Exposing the substrate with an exposure amount corresponding to the calculated exposure amount;

Heating the exposed substrate; and

Developing the heated substrate.

[0020] In this method! /, For example, a step of measuring the amount of warpage of each measurement region of the substrate; And a step of calculating an exposure correction amount for correcting the calculated exposure amount based on the measured amount of warpage, and the step of exposing the substrate includes V and T based on the exposure amount and the exposure correction amount. You can make it go!

The storage medium of the present invention is used in, for example, an apparatus for forming a resist pattern by applying a resist solution to a substrate having a base film formed on the surface of the substrate, and a computer program that runs on a computer. A stored storage medium. In the computer program, steps are included so as to carry out the resist pattern forming method, coating method, and developing method described above!

The invention's effect

[0022] According to the present invention, it is possible to suppress variation in the line width of the resist pattern for each measurement region due to variations in the optical properties of the base film in the plane of the substrate. In addition, the line width of the resist pattern between the substrates can be controlled with high accuracy. Accordingly, it is possible to suppress a decrease in the yield of products manufactured from the substrate. In addition, since it is possible to suppress variations in the line width of the resist pattern for each optical property measurement region, it is possible to control the line width of the resist pattern within and between the substrates with high accuracy.

Brief Description of Drawings

FIG. 1 is a plan view showing an example of a coating and developing apparatus of the present invention.

FIG. 2 is an overall perspective view showing the coating and developing apparatus.

FIG. 3 is a perspective view showing an interface block of the coating and developing apparatus.

FIG. 4 is a configuration diagram of a heating unit provided in the coating and developing apparatus.

FIG. 5 is a configuration diagram of a heating plate of the heating unit and a heater provided on the heating plate.

FIG. 6 is an explanatory view showing each region of the wafer placed on the hot plate.

FIG. 7 is a longitudinal side view of a refractive index measurement unit provided in the coating and developing apparatus.

FIG. 8 is a configuration diagram of a wafer warpage measuring unit provided in the coating and developing apparatus.

FIG. 9 is a configuration diagram of a control unit provided in the coating and developing apparatus.

FIG. 10 is a graph showing the correlation between the line width of a resist pattern, the refractive index of a base film, and the temperature of the heater stored in a storage unit provided in the control unit. FIG. 11 is a flowchart showing a process of forming a resist pattern on a wafer by the coating and developing apparatus.

FIG. 12 is an explanatory diagram showing how the offset amount is determined.

FIG. 13 is a configuration diagram showing a configuration of a control unit provided in an example of a resist pattern forming apparatus of the present invention.

FIG. 14 is a flowchart showing a process of forming a resist pattern on a wafer by the resist pattern forming apparatus.

FIG. 15 is a plan view showing another example of the coating and developing apparatus of the present invention.

FIG. 16 is a plan view showing still another example of the coating and developing apparatus of the present invention.

FIG. 17 is an explanatory view showing a configuration of an inspection / measurement block of the coating and developing apparatus.

Explanation of symbols

[0024] W Semiconductor wafer

4 Heating unit

40a ~ 40e heater

43 Hot plate

5 Refractive index measurement unit

6 Warpage measurement unit

7 Control unit

74 Memory

BEST MODE FOR CARRYING OUT THE INVENTION

Next, the outline of the embodiment of the present invention will be described. This embodiment is applied to, for example, a substrate having a base film formed on a silicon substrate, and before the resist film is formed on the base film, the optical properties of each predetermined region in the surface of the base film are described. The refractive index is measured and the amount of warpage of the substrate in each region is measured. Then, based on the measured refractive index of each region and the amount of warpage of the wafer W for each wafer W after exposure and before development, the dimension of the formed resist pattern becomes the target value. It is intended to control the heating temperature.

A resist pattern forming apparatus in which an exposure apparatus is connected to the coating and developing apparatus according to the embodiment of the present invention will be described. 1 and 2 are schematic plan views of the coating and developing apparatus, respectively. It is a body perspective view. In the figure, B1 is a carrier block of a coating and developing apparatus, and a carrier station 10 having a mounting portion 10a for loading and unloading a carrier C1 in which, for example, 13 wafers W are sealed and stored, and this carrier station. An opening / closing part 21 provided on the front wall as viewed from 10 and a delivery means A1 for taking out the wafer W from the carrier C1 via the opening / closing part 21 are provided.

[0027] The wafer W accommodated in the carrier C1 and carried into the coating and developing apparatus is, for example, a large number of SiO (silicon oxide), SiN (silicon nitride), etc. on a flat and uniform silicon substrate (bare silicon). The resist film formed in this coating and developing apparatus is combined with these various films between the silicon substrate and the antireflection film formed in the coating and developing apparatus. This is referred to as a base film.

[0028] A processing block B2 surrounded by a casing 21 is connected to the back side of the carrier block B1, and this processing block B2 has a multi-stage heating / cooling system unit from the front side. The main transport means A2 and A3 for transferring the wafer W between the shelf units Ul, U2 and U3 and the liquid processing units U4 and U5 are provided alternately. The main transport means A2 and A3 are one side of the shelf unit Ul, U2 and U3 arranged in the front-rear direction when viewed from the carrier block B1, and one side of the right side liquid treatment units U4 and U5, which will be described later. It is placed in a space surrounded by a partition wall 23 composed of the left side and the back side forming one side. In the figure, 24 and 25 are temperature / humidity control units equipped with a temperature control device for the treatment liquid used in each unit and ducts for temperature / humidity control.

[0029] The liquid processing unit U4 is, for example, an application unit (B ARC) for forming an antireflection film on a chemical solution storage section for storing a resist solution or a chemical solution for forming an antireflection film as shown in FIG. (Hereinafter referred to as “Anti-Reflection Film Formation Unit (BARC)”) 26 in two stages, resist film formation coating unit (COT) (hereinafter referred to as “resist coating unit (COT)”) 27 in three stages, from top to bottom The layers are stacked in this order. The liquid processing unit U5 is configured by stacking development units (DEV) in five stages on a chemical solution storage section for storing a developer and the like. The antireflection film forming unit 26, the resist coating unit 27, and the developing unit 28 are each provided with a nozzle that supplies a chemical solution, a resist solution, and a developer for forming the antireflection film to the surface of the wafer W. [0030] The aforementioned shelf units Ul, U2, U3 are configured by laminating various units for performing pre-processing and post-processing of the liquid processing units U4, U5 in multiple stages, A hydrophobic treatment unit that performs hydrophobic treatment on the entire surface of the wafer W before applying the resist solution, a heating unit called PAB that heats the wafer W after application of the resist (beta), and the PEB described in the background section This includes a heating unit 4 that performs heating, a heating unit called POST that heats the wafer W after development, and a cooling unit that cools the wafer W. The configuration of the heating unit 4 that performs PEB will be described later.

[0031] The shelf unit U1 has a transfer stage (TRS) force for delivering the wafer W between the carrier block B1 and the processing block B2. The shelf unit U3 has a processing block B2 and an interface block B3. A transfer stage (TRS) for transferring the wafer W to and from each is included. For example, between the shelf units U1 and U2, a wafer W on which an antireflection film is formed is loaded at a position accessible by the main transport mechanism A2, and an optical measurement for measuring the refractive index as an optical property of the base film. A unit for measuring the refractive index 5 is provided. The refractive index measuring unit 5 is described later.

[0032] An exposure apparatus B4 is connected to the back side of the shelf unit U3 in the processing block B2 via an interface block B3. The configuration of the interface block B 3 will be described with reference to FIG. The interface block B3 is composed of a first transfer chamber 3A and a second transfer chamber 3B provided before and after the processing block B2 and the exposure apparatus B4. The transfer means 31A and the transfer means 31B are respectively provided. Is provided. In the first transfer chamber 3A, the warp measurement unit 6 for measuring the warpage of the wafer W, the transfer stage TRS32 for transferring the wafer W between the transfer means 31A and the transfer means 31B, and the temperature of the wafer W to be exposed are controlled. The high-precision temperature control unit 33 and the battery that temporarily retracts the wafer W according to the transfer status.

[0033] The exposure apparatus B4 is provided with stages 35 and 36 force S for transferring to and from the conveying means 31B of the interface unit B3. The stage 35 is exposed to the wafer W force before exposure processing. Each processed wafer W is placed.

[0034] Next, the configuration of the heating unit 4 for performing PEB provided in the shelf units U1 to U3 will be described with reference to FIG. Figures 4 (a) and (b) are cross-sectional plan views of the heating unit 4, respectively. FIG. The heating mute 4 includes a casing 41, and a circular hot plate 43 and a cooling plate 44 are provided on a stage 42 in the casing 41. The cooling plate 44 moves in the horizontal direction in the figure, and cools the mounted wafer. A transfer port 46 that can be opened and closed by a shirt 45 is provided on the side wall of the casing 41, and the wafer is transferred between the main transfer means A2 and A3 that have entered the casing 41 through the transfer port 46 and the cooling plate 44. W is handed over. In the figure, 47 and 48 are three pins that can move up and down (only two are shown in the figure). Pin 47 is between the cooling plate 44 and the main transport means A2 and A3, and pin 48 is the cooling plate 47 and heat. Wafer W is transferred to and from plate 43, respectively. In the figure, 46a is a slit provided in the cooling plate 44 for allowing the pins 47 and 48 to pass therethrough, and 43a is a hole provided in the hot plate 43 for allowing the pins 48 to pass therethrough.

FIG. 5 is a top view of the hot plate 43. The hot plate 43 surrounds the central disc-shaped region R1 and the region R1, for example, and has a fan-like shape in which the periphery of the region R1 is equally divided in the circumferential direction. Regions R2 to R5 are partitioned, and heaters 40a to 40e corresponding to the shape of each region are embedded in each region R1 to R5. Each of the heaters 40a to 40e is connected to a control unit 7 to be described later via a controller 49. In response to the control signal transmitted from the control unit 7, the controller 49 supplies power to the heaters 40a to 40e independently of each other, and the heaters 40a to 40e are controlled to a predetermined temperature, as shown in FIG. In the wafer W placed on the hot plate 43, each region P1 to P5 indicated by a chain line corresponding to the region R;! To R5 of the hot plate 43 corresponds to the temperature of the heaters 40a to 40e. Each is heated.

Subsequently, the refractive index measuring unit 5 will be described with reference to FIG. The refractive index measurement unit 5 includes a casing 51, and a stage 52 for mounting the wafer W is provided in the casing 51. The stage 52 includes the main transfer means A 2, A 3 and the casing 51. Wafer W is transferred through the transfer port 53 provided on the side wall. Below the stage 52, there is provided a rotation drive unit 54 for rotating the stage 52 around the lead straight axis. The rotation drive unit 54 is provided on the XY drive unit 55, and the XY drive unit 55 is provided with the rotation drive unit 54. At the same time, the stage 52 is moved in the front / back direction and the left / right direction of the drawing.

[0037] Above the stage 52, there is provided a light irradiation unit 56 that irradiates light onto the wafer W placed on the stage 52. The light irradiation unit 56 includes, for example, a laser light source 56a, a polarizer 56b, and a correction plate. With 56c etc.! Also, on the stage 52, from the light irradiation part 56 under the wafer W. A light receiving portion 57 is provided for receiving the light irradiated to the ground film and reflected from the ground film force. The light receiving unit 57 includes an analyzer 57a, a photodetector 57b, and the like.

[0038] Operations of the XY stage 55, the rotation driving unit 54, and the light irradiation unit 56 are controlled by the control unit 7, and for example, the light irradiation unit 56 sequentially irradiates light to the respective regions P1 to P5 in the surface of the wafer W. . The light receiving unit 57 detects the reflected light of the irradiated light and transmits a control signal corresponding to the detected reflected light to the control unit 7, and the control unit 7 determines the phase of the reflected light based on the control signal, By detecting the amplitude, etc., the refractive index of the underlying film in each region P1 to P5 of the wafer W is calculated.

Next, the warpage measurement unit 6 will be described. FIG. 8 (a) is a longitudinal front view of the warp measurement unit 6. As shown in this figure, the warp measurement unit 6 includes a casing 61, and the casing 61 has a circular shape on which the wafer W is placed. Stage 62 is provided. A plurality of pins 63 that support the back surface of the wafer W are provided on the surface of the stage 62.

FIG. 8 (b) is a perspective view showing the configuration of each part in the housing 61. In the figure, 64 is a hole that penetrates the stage 62 in the thickness direction. The transfer means 31A enters the case 61 through the transfer port 65 provided on the side wall of the case 61, and the wafer W is placed on the stage 62. At the time of placing, air accumulates between the stage 62 and the wafer W, and has a role to prevent the wafer W from sliding on the stage 62. A notch 62a is provided at the peripheral edge of the stage 62 so as to correspond to the shape of the conveying means 31A. The stage 62 is configured to be rotatable and vertically movable about a vertical axis via a drive mechanism 66 provided at the lower part thereof.

Laser displacement meters 68 and 69 are provided above the center of stage 62 and above the peripheral edge in a state of being supported by support member 67, respectively. For example, while the stage 32 is rotating, these laser displacement meters 68 and 69 irradiate the center part and the peripheral part of the wafer W placed on the stage 62 with a laser and receive the reflected light, thereby receiving the laser. displacement gauge _68, 6 ₉ force, the central portion of al the wafer W, respectively measuring the distance to the periphery. A control signal corresponding to the measured distance is transmitted to the control unit 7. Based on the transmitted control signal, the control unit 7 calculates the warpage amount of each region P1 to P5 of the wafer W.

Next, the configuration of the control unit 7 will be described with reference to FIG. The control unit 7 includes a data bus 71. The data bus 71 includes a CPU 72 for performing various operations and a program storage unit 73. Is connected. In the program storage unit 73, the action of a coating and developing apparatus as described later, that is, temperature adjustment of the wafer W in each heating unit and cooling unit, film formation processing of each film on the wafer W, delivery of the wafer W between the units, Stored is a program 74 made of software, for example, instructed to measure the warp of the refractive index of the undercoat film or wafer W.

[0043] When the program 74 is stored in the program storage unit 73 and read out by the control unit 7, the control unit 7 transmits a control signal to each unit of the coating and developing apparatus to control the operation of the coating and developing apparatus. The program 74 is stored in the program storage unit 73 while being stored in a storage medium such as a node disk, a compact disk, a magnetic optical disk, or a memory card.

In addition, a storage unit 75 is connected to the data bus 71. This memory unit stores a correlation 76 between the resist pattern dimension (CD) and the refractive index, a correlation between the heater temperature and CD, and a correlation 77 between the warpage amount and the heater temperature correction amount. Further, the target value of the resist pattern dimension (CD) is inputted, for example, from an external input means and is overwritten and stored on the previously inputted target value. The correlations 76 and 77 show, for example, the relation with respect to the heater 40a in the center of the hot plate 43. Although not shown, the other heaters 40b to 40e are similar to the correlations 76 and 77, for example. However, a slightly different correlation is memorized.

[0045] The correlation 76 between the resist pattern dimension (CD) and the refractive index is stored, for example, as a graph shown in Fig. 10 (a). The straight line kl in this graph represents the wafer W on which the underlying film is provided. The heater 40a temperature is set to a temperature corresponding to the target value of CD, and a series of resist pattern formation processes are performed, and the relationship between the refractive index of each underlying film and the formed CD is shown in the figure. It was created based on the plot. The CD is measured using, for example, a line width measuring unit provided outside the coating and developing apparatus.

[0046] The correlation 77 between the temperature of the heater 40a and CD is stored, for example, as a graph shown in Fig. 10 (b). The straight line k2 in this graph is based on the plot in the figure obtained by performing PEB by changing the temperature of the heater 40a and forming a resist pattern on a wafer in which a resist is uniformly applied to a silicon substrate, for example. It was created. like this In addition, by directly forming a resist pattern on a silicon substrate, the correlation between the CD formed without being affected by the underlying film and the heating temperature is obtained.

That is, the graph of FIG. 10 (b) shows the relationship between the temperature of the heater 40a and the line width of the pattern to be formed when there is no variation in the underlying film, and the graph of FIG. 10 (a) It is intended to compensate for CD fluctuations when variations in the underlying film occur. Therefore, when the target value of CD is actually determined, the target value can be obtained from Fig. 10 (b) by selecting the heating temperature corresponding to this target CD. It is only necessary to correct the temperature. The heating temperature in the claims is a temperature obtained by adding the temperature correction component and the offset amount, which will be described later, to the selected heating temperature.

[0048] As shown in graphs 76 and 77, the CD of the pattern depends on the refractive index and the temperature of the heater. For example, the relational expressions of the straight lines X and Y are f and g, respectively, and the refractive index is x and CD. Is represented by y and heater temperature z, respectively, from Fig. 10 (a), y = f (x), and from Fig. 10 (b), z = g (y) = g [f (x)] It can be expressed as a formula. When a new resist pattern dimension target value is input and the target value is stored in the storage unit 75, the control unit 7 calculates the reference value of the refractive index corresponding to the target value and each heater from the relational expression. Calculate the reference value for the heating temperature of 40a to 40e. As described above, since the correlation between CD, which is different for each heater, the temperature of the heater, and the refractive index is stored, the reference value of each heater is slightly different for each heater.

[0049] The reference value of the heating temperature of the heater 40a and the reference value of the refractive index corresponding to the reference value of the heater 40a are represented by α and β, respectively. For example, as described above in each region P1 of the wafer W If the measured refractive index is deviated by Δα from the reference value α, the control unit 7 sets g [f (A «)] Is calculated.

[0050] When warpage is detected in each region P1 of the wafer W as described above, the control unit 7 calculates the amount of warpage, the amount of warpage stored in the storage unit 7, and the correction temperature of the heater 40. Based on the correlation, a correction temperature for correcting the estimated offset amount g [f (Δα)] calculated based on the refractive index deviation is calculated. Assuming that the amount of warpage is γ, and the correction temperature calculated from the amount of warpage γ is represented by h (γ), the control unit 7 performs, for example, g [f (A a )] + h (y) offset to heat each heater 40a, C) Heat (PEB) treatment of W. In addition, in the case where no warp is detected in the region P1, the g [f (Δα)] force S, which is a predetermined offset amount, is applied to the reference value / 3 as an offset. Although the heater 40a has been described, calculation is performed for the other heaters 40b to 40e in the same manner as the heater 40a, and an offset is set.

[0051] Next, the operation of the above-described coating and developing apparatus will be described with reference to FIG. FIG. 11 is a flow chart showing the process from the formation of the base film on the surface of the wafer W to the development process. First, the operator inputs a target value for the dimension of the resist pattern. Based on the target value input and stored in the storage unit 75, the control unit 7 calculates the corresponding reference value of the refractive index and the reference value of the heating temperature of each heater 40a to 40e of the heating unit 4. To do.

[0052] Subsequently, when the carrier C1 storing the wafer W is loaded from the outside and placed on the mounting table 10a, the opening / closing part 11 is opened and the lid of the carrier C1 is removed, and the wafer W is removed by the transfer means A1. Is taken out. Then, the wafer W is transferred to the main transfer means A2 through a transfer stage (TRS) constituting one stage of the shelf unit U1.

[0053] The main transport means A2 transports the wafer W to the antireflection film forming unit 26, where the material of the antireflection film is applied to the entire surface of the wafer W from the material supply nozzle, and then the wafer W is transported to the main transport means A2. By means A2, it is conveyed to a heating unit that constitutes one shelf of the shelf units U1 to U3, and is subjected to heat treatment to form an antireflection film (step Sl).

[0054] Thereafter, the wafer W is subjected to a hydrophobic treatment unit constituting one shelf among the main transfer means A2 → one shelf among the shelf units U1 to U3 → one shelf among the shelf units U1 to U3. G → Cooling unit that constitutes one of the shelf units U1 to U3 → Main transport means A2, and then transported to the refractive index measurement unit 5 by the main transport means A2 and mounted on the stage 52. Placed.

The stage 52 on which the wafer W is placed moves to a predetermined position via the rotation driving unit 54 and the XY driving unit 55, and the light irradiation unit 56 first, for example, a base film in the region P1 in the plane of the wafer W When the light receiving unit 57 receives the light reflected from the base film, the control unit 7 calculates the refractive index of the base film in the region P1 based on the received reflected light. Thereafter, the wafer W sequentially moves to a predetermined position via the rotation driving unit 54 and the XY driving unit 55, and the refraction of the region P1 is performed. Similar to the measurement of the refractive index, the light irradiation unit 56 irradiates the regions P2, P3, P4, and P5 of the wafer W, and the control unit 7 calculates the refractive index of each of these regions based on the reflected light. (Step S2).

[0056] After the refractive indexes of the regions P1 to P5 of the wafer W are measured, the wafer W is transferred to the resist coating unit (COT) 27 via the main transfer means A2, and the resist solution is applied to the surface of the antireflection film. Applied (Step S3). After drying the resist solution, the wafer W is transferred to one heating unit of the shelf units U1 to U3 by the main transfer means A2 (A3), heated at a predetermined temperature (PAB), and a resist film is formed. (Step S4).

[0057] After the resist film is formed, the wafer W is transferred to the main transfer means 8-2 (83) → the cooling unit of the shelf units U1 to U3 → the main transfer means A3 → the transfer unit (TRS) of the shelf unit U3 → the interface. It is conveyed in the order of the conveying means 31A of the one face block B3, conveyed to the warpage measuring unit 6 by the conveying means 31A, and placed on the stage 62. After that, laser displacement meter 68, 69 force, laser is applied to the center and periphery of wafer W and stage 62 rotates, and these laser displacement meters 68, 69 receive the reflected light from wafer W. Then, the control unit 7 calculates the amount of warpage of each of the regions P1 to P5 of the wafer W based on the reflected light (step S5).

[0058] After the measurement of the warp amount, the wafer W is temporarily retracted to the buffer cassette 34 by the transfer means 31A, and then the transfer means 31A → the high-precision temperature control unit 33 → the transfer means 31A → the delivery stage. TRS32 → transport means 31B → transferred to stage 35 of exposure apparatus S4, and then subjected to exposure processing by exposure apparatus S4 (step S6).

[0059] The wafer W that has undergone the exposure process is placed on the stage 36, and then the transfer means 318 → the transfer stage TRS32 → the transfer means 31A → the transfer stage of the shelf unit U3 of the processing block B2 → the main transfer means The main transfer means A3 transfers the wafer W to the cooling plate 44 of the heating unit 4 constituting one shelf of the shelf units U1 to U3.

For example, at this time, the controller 7 calculates the refractive index calculated based on the refractive index (α 1) measured in the region P 1 of the wafer W and the target value of the resist pattern dimension (CD) previously. Based on the correlation value 76 between the reference value (α) and the CD stored in the storage unit 75 and the refractive index 76 and the correlation 77 between the temperature of the heater 40 of the heating unit 4 stored in the storage unit 75 and CD. ,refraction The estimated offset amount (expressed as Δβ) of the heater 40a corresponding to the rate deviation α−α1 (Δa) is calculated.

[0061] The manner in which the estimated offset amount is calculated will be specifically described with reference to FIG. As shown in FIG. 12 (a), the control unit 7 determines the value of CD corresponding to α 1 from the straight line kl in the correlation 77 graph for the refractive index α 1 taken from the refractive index measuring unit 5. 1). Subsequently, the control unit 7 plots this CD 1 on the horizontal axis of the graph of FIG. 12B, and reads the value / 31 on the vertical axis corresponding to the plotted value on the horizontal axis. Further, the control unit 7 executes the arithmetic expression (/ 3/3 1), obtains the arithmetic value Δ / 3, and determines this Δ / 3 as the offset amount for / 3.

[0062] Further, the control unit 7 calculates the offset expected amount from the correlation between the warpage amount measured in each region P1 of the wafer W and the warpage amount stored in the storage unit 75 and the temperature correction amount. The correction temperature amount is calculated, and based on the correction temperature amount, the offset expected amount, and the reference value of the heating temperature previously calculated from the target value of CD, it corresponds to each region P 1 of the wafer W. Calculate the heating temperature of the heater 40a to be determined. The heating temperatures of the other heaters 40b to 40e are determined by calculation in the same manner as the heater 40a. As a result, the control unit 7 outputs the calculated heating temperature as a set temperature to the controller 49, and the controller 49 converts the set temperature and a temperature detection value of a temperature detection unit (not shown) provided in each heating region. Based on this, the power supplied to each heater is controlled, and thus temperature control is performed.

[0063] When the heaters 40a to 40e are heated to the set temperature by the control unit 7, the wafer W is transferred from the cooling plate 44 to the hot plate 43, and the regions P1 to P5 of the wafer W are heated. PEB processing is performed (step S7).

[0064] The wafer W that has undergone PEB processing is transferred to the cooling plate 44, cooled, and then transferred to the developing unit 28 by the main transfer means A3, and the developer is supplied to the surface thereof. A portion that is soluble in the developer of the resist film is dissolved, and a predetermined resist pattern is formed on the resist film (step S8). After that, the wafer W is heated from one shelf in the shelf units U1 to U3 for main transfer means A3 → POST → main transfer means A3 → cooling unit for one shelf in one of the shelf units U1 to U3. → Main transfer means A2 → Shelf unit U1 delivery stage → Transfer means A1 in this order, the delivery means A1 Is returned to the original carrier CI on the mounting table 20a.

[0065] The coating and developing apparatus described above includes the refractive index measurement unit 5 that measures the refractive index that is the optical property of each of the regions P1 to P5 in the surface of the base film of the wafer W before the resist film is formed, and the region P1. Heating unit 4 including a hot plate 43 provided with heaters 40a to 40e for heating the wafer W after exposure and performing PEB processing independently for each region R1 to R5 corresponding to ~ P5 And a control unit 7 including a storage unit 75 in which the correlation between the refractive index determined in advance, the temperature of each heater, and the line width of the resist pattern is stored is stored in the refractive index measurement unit. Based on the refractive index measured by the knit 5, the target value of the line width of the resist pattern, and the correlation of the storage unit 75, the temperature of each heater 40a to 40e is controlled, and each heating region R1 to R5 of the hot plate 43 is controlled. To control the temperature. With this configuration, it is possible to suppress variations in the resist pattern dimension between the regions P1 to P5 due to variations in the optical properties of the underlying film in the regions P1 to P5 in the plane of the wafer W. Therefore, the resist pattern dimension in the plane of the wafer W can be controlled with high accuracy. Therefore, it is possible to suppress a decrease in the yield of semiconductor products manufactured with wafer W power.

[0066] In the coating and developing apparatus, the amount of warpage is measured for each of the regions P1 to P5 in the plane of the wafer W, and each region P1 to P5 of the wafer W is heated during PEB based on the amount of warpage. Since this is corrected, it is possible to improve the ability of the variation in resist pattern dimensions between the regions P1 to P5.

[0067] The measurement of the refractive index of the wafer W and the setting of the corresponding heating temperature may be performed for every wafer W in the same lot, or after the wafer W at the head of the lot is Refractive index measurement is not performed for subsequent wafers W in the same lot, and each region P;! To P5 is set to be heated at each heating temperature set for the first wafer W. Good. In this way, the refractive index is measured and the heating temperature is set only for the first wafer in the lot, or there is! /, The subsequent wafer W is set! /, And the refractive index is measured and the heating temperature is set again. For example, a threshold (allowable range) is set for the refractive index of each region of the wafer W at the head of the lot, and the control unit 7 determines that the measured refractive index is within the allowable range. In this case, the temperature of the subsequent wafer W is not newly set. If it is determined that the allowable range is exceeded, the subsequent wafer W is heated to the next wafer W! The degree may be set. By adopting such a configuration, the throughput can be improved as compared with the case where the refractive index is measured for all wafers.

Further, the timing of measuring the refractive index is not limited to the timing of the above-described embodiment as long as it is before the formation of the resist film, and may be, for example, before the formation of the antireflection film. Therefore, the optical property detected at the station is transmitted from the station for detecting the optical property of the base film before being carried into the coating and developing device to the coating and developing device. The heating amount of the heating unit 4 may be adjusted based on the optical property data.

Next, an embodiment of the resist pattern forming apparatus of the present invention will be described. This resist pattern forming apparatus is configured in substantially the same manner as the resist pattern forming apparatus including the coating and developing apparatus of the above-described embodiment, and FIG. 13 shows the configuration of the control unit 8. In FIG. 13, components having the same configurations as those of the coating and developing apparatus of the above-described embodiment are denoted by the same reference numerals as those used in the above-described embodiment. The exposure apparatus B5 is configured to be able to perform exposure processing by changing the exposure amount for each of the regions P1 to P5 of the wafer W with the force that is configured in substantially the same manner as the exposure apparatus B4 of the embodiment described above. Has been. Although not shown, the heating unit for performing PEB provided in the resist pattern forming apparatus is configured in substantially the same manner as the heating unit 4 described above. The heating unit is not intended to perform the heat treatment by applying an offset based on the refractive index and the amount of warpage calculated by the control unit 7. Unlike!

[0070] The control unit 8 includes a storage unit 81. The storage unit 81 is different from the storage unit 75 described above. For example, the correlation between the temperature of the heater 40 of the heating unit 4 and the CD is obtained. Instead, the correlation between the exposure amount and the CD is stored, and the correlation between the curvature amount and the exposure correction amount is stored instead of the correlation between the curvature amount and the temperature correction amount. When the target value of the CD is input to the storage unit 81, the control unit 8 determines the CD based on the correlation between the CD and the refractive index stored in the storage unit 81 and the correlation between the exposure amount and the CD. Calculate the exposure standard value and refractive index standard value corresponding to the target value.

Next, the processing flow of this resist pattern forming apparatus will be described with reference to FIG. First, before the wafer W is loaded, the target value of CD is input, and the target value is set. The corresponding exposure value reference value and refractive index reference value are calculated. After that, when the wafer W is carried into the apparatus, a series of processing proceeds according to steps T1 to T5 similar to steps S1 to S5 of the coating and developing apparatus. After step Τ5 is completed, the control unit 8 determines the refractive index in Ρ1 to Ρ5 of the wafer W calculated using the refractive index measurement unit 5, the correlation between the CD stored in the storage unit 81 and the refractive index, and Based on the correlation between the exposure amount and the CD, the offset amount of the exposure amount is calculated based on the deviation of the refractive index, and the offset is estimated based on the warpage amount of each region P1 to P5 using the warpage measurement unit 6. An exposure correction amount for correcting the amount is calculated, and an exposure amount is determined for each of the regions P1 to P5 based on the estimated offset amount and the exposure correction amount.

Thereafter, when wafer W is carried into exposure apparatus B5, exposure apparatus B5 exposes each of regions P1 to P5 based on the determined exposure amount (step T6). After the exposure, the wafer W is transported along a path similar to that of the above-described embodiment, and is subjected to a heating (ΡΡ) process in the heating unit (step Τ7), and thereafter a development process (step Τ8).

According to this resist pattern forming apparatus, since the exposure amount is controlled based on the optical properties of the regions Ρ1 to Ρ5 in the plane of the wafer W, the same as in the coating and developing apparatus of the above-described embodiment. In addition, it is possible to suppress variations in the size of the resist pattern between the regions Ρ1 to Ρ5 due to variations in the optical properties of the base film, and thus it is possible to suppress a decrease in yield. Furthermore, since the exposure amount is controlled based on the amount of warpage of each of the regions Ρ1 to Ρ5, variations in resist pattern dimensions can be further suppressed.

Note that in the embodiments of the coating and developing apparatus and the resist pattern forming apparatus described above, the refractive index is calculated as the optical property of the base film, and the offset of the heating temperature and the exposure amount based on the refractive index. In addition to the refractive index, the offset is calculated based on the optical properties of reflectivity and extinction coefficient, as well as the refractive index. Also good. In addition, a film thickness measuring unit for calculating the film thickness of the base film from the reflectance, refractive index or extinction coefficient is provided in the coating and developing apparatus, and based on the film thickness of the areas Ρ1 to Ρ5 measured by this film thickness measuring device. The heating temperature and exposure amount of each area may be offset. As the film thickness measurement unit, one that measures the film thickness and the refractive index at the same time is used, and the measured film thickness and refractive index are measured. Based on V or deviation, the controller may control the PEB overheating temperature or exposure amount.

In the above embodiment, the timing for measuring the warpage of the wafer W is not limited to after the resist film formation but before the exposure. When the heating temperature of the PEB is offset based on the refractive index, the PEB is measured. If the offset is applied depending on the exposure amount, it may be before exposure. Accordingly, the measurement may be performed before the wafer W is carried into the coating and developing apparatus, in which the warpage may be measured before the refractive index of the base film is measured. Further, the warpage measurement unit 6 may be arranged, for example, on the shelf units U1 to U3 of the processing block B2.

The coating and developing apparatus shown in FIG. 15 is configured in substantially the same manner as the coating and developing apparatus shown in FIG. 1, and is an example in which the arrangement of the warp measuring unit 6 is changed. In this coating and developing apparatus, as shown in FIG. 15, the warp measuring unit 6 is located between the shelf unit U2 and the shelf unit U3 at a position accessible by the main conveyance means A3 (the back of the main conveyance means A3). It is provided. The warp measurement unit 6 may be provided on the back surface of the main transport means A2, and in that case, for example, the warp measurement unit 6 is provided so as to be laminated on the refractive index measurement unit 5. The refractive index measurement unit 5 may be provided on the back surface of the main transport means A3, and the warp measurement unit 6 may be provided on the back surface of the main transport means A2.

In the coating and developing apparatus of FIG. 1, for example, a unit for measuring CD is provided outside the coating and developing apparatus, and the CD and base film formed on the wafer W like the straight line kl described above by the measuring unit. For example, as shown in FIG. 16, a unit for measuring CD is provided in the coating and developing apparatus (so-called “in-line”). The structure in which the correlation is obtained may be used.

[0078] An inspection / measurement block B6 is provided between the carrier block B1 and the processing block B2 of the coating and developing apparatus of FIG. 16, and a conveying means 91 is provided at the center of the inspection / measurement block B6. Yes. The configuration of the inspection / measurement block B6 will be described with reference to FIG. Shelf units U6 and U7 are respectively provided on the left and right sides of the transfer means 91. The shelf unit U6 includes, for example, a surface inspection unit 92 for inspecting the surface state of the wafer W, a line width measuring unit 93 force S, They are stacked in this order from the bottom. [0079] The line width measuring unit 93 irradiates the resist pattern formed on the resist film by development, and measures the line width of the pattern based on the reflected light. The shelf unit U7 is configured, for example, by laminating a film thickness measuring unit 94 for measuring each film thickness of the wafer W after development processing, a warp measuring unit 6, and a refractive index measuring unit 5 in this order from the bottom.

[0080] The transfer means 91 includes, for example, two tweezers for holding the wafer W, can access each unit of the shelf units U6 and U7, the delivery stage TRS of the shelf unit U1, and between the delivery means A1. It is configured so that the wafer W can be delivered. The number of tweezers can be 3 or more. A number that does not hinder the transfer of wafer W is selected.

[0081] In this coating and developing apparatus, first, for example, a plurality of test wafers W configured so as to have different optical properties in each of the regions P1 to P5 are loaded into the coating and developing apparatus and used for these tests. Based on the refractive index of the base film measured during the process of forming a resist pattern on the wafer W and the line width of the pattern measured in-line! / Is determined so as to be stored in the determined correlation 1S storage unit. Except that the correlation is determined in this way, the control unit of the coating and developing apparatus is configured in substantially the same manner as the control unit 7 of the above-described embodiment.

[0082] A route through which the test wafer W is delivered will be briefly described. The test wafer W carried into the coating and developing apparatus is delivered in the order of delivery means Al → conveyance means 91 → refractive index measurement unit 5 → conveyance means 91, and then delivered into the processing block B2 and described above. An antireflection film and a resist film are formed in the same manner as the coating developing apparatus. Subsequently, the test wafer W is subjected to an exposure process, and then subjected to a PEB process in a state where each of the heaters 40a to 40e is set to a temperature corresponding to the target value of the CD, and further subjected to a development process, and then again. Delivered to transport means 91. The test wafer W is transferred in the order of the line width measuring unit 93 → the transfer means 91 → the transfer means A1, and returned to the carrier block B1.

[0083] When such transfer is completed for all test wafers W, the control unit performs wafer W based on the line width and refractive index measured from the line width measurement unit 93 and the refractive index measurement unit 5, respectively. Refraction corresponding to the straight line kl in the graph of the embodiment described above for each of the regions P1 to P5 Calculate and determine the correlation between rate and CD.

[0084] After the correlation is determined, the above-described wafer W for the product is loaded into the coating and developing apparatus, and the wafer W is transferred from the delivery means Al → conveyance means 91 → refractive index measuring unit 5 → conveyance. After being transported in the order of means 91 → warp measurement unit 6 → transport means 91, it is transferred to the processing block B2, where it is subjected to various film formation processing and exposure processing in the same manner as the test wafer W described above. Thereafter, as in the above-described embodiment, the target value of CD stored in the storage unit in advance, the correlation between the heater temperature and CD, and the correlation between the refractive index stored by measurement of the test wafer and CD. Based on the above, PEB processing is performed with offset applied to each region P1 to P5 of the wafer W.

[0085] The wafer W after PEB is subjected to a development process. For example, a part of the wafer W is returned to the carrier block B1 in the same manner as the test wafer W. After being transported by means 91 → surface inspection unit 92 → transport means 91 → film thickness measuring unit 94, various film thicknesses formed on the wafer W and the surface state of the wafer W are inspected, and then returned to the carrier block B1.

In the coating and developing apparatus of FIG. 16, various inspection units and measuring devices are provided in the inspection / measurement block B6. Therefore, the maintenance of each unit of this inspection 'measurement block B6 is performed. Convenience can be improved. In the above embodiment, for example, a series of pattern formation processing is performed, and the wafer W returned from the processing block B2 to the carrier C of the carrier block B1 is again inspected and measured via the transfer means A1 and the transfer means 91. It may be transported to block B6 for various inspections. In this case, even if the subsequent wafer W is transferred between the units in the processing block B2 and the interface block B3, the transfer effect of the blocks B2 and B3 affects the transfer means Al and the transfer means 91. This means that a predetermined wafer W can be transported between the blocks Bl and B6 and between the blocks B2 and B3 at the same time. Note that the inspection / measurement block B6 and the carrier block B1 may be operated while the processing block B2 is turned off, and the wafer W may be transferred to various units in the various blocks B6 for inspection. In this case, power can be saved compared to the case where all the blocks of the coating and developing device are turned on. [0087] As described above, only for the first wafer W of the lot, the refractive index is measured and the heater temperature is set based on the refractive index, and the wafer W in the subsequent lot is set. However, it may be heated at the same temperature, but for example, a predetermined number of wafers are periodically extracted in the lot, and the so-called sampling inspection is performed in which the refractive index is measured for each of the extracted wafers W. The temperature of the heaters 40a to 40e may be set based on the inspection result every time the sampling inspection is performed.

[0088] Although one embodiment of the present invention has been described with reference to the drawings, the present invention is not limited to the illustrated embodiment. Various modifications can be made to the illustrated embodiment within the same scope or equivalent scope as the present invention. Industrial applicability

The present invention is useful for coating / development processing and resist pattern formation in a photoresist process.

Claims

The scope of the claims

[1] In a coating and developing apparatus for applying a resist solution to a substrate having a base film formed on the surface and developing the exposed substrate to form a resist pattern.

An optical measurement unit that measures the optical properties of each region by irradiating light to the region corresponding to each heating region of the substrate before applying the resist solution;

A storage unit in which the optical properties of the base film of the substrate obtained in advance, the heating temperature of the heater, and the correlation between the line width of the resist pattern are stored;

Based on the optical properties of the base film of the substrate measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage section! /, The heater of each heating area And a control unit for calculating the heating temperature and controlling the temperature of each heating region of the hot plate based on the calculated heating temperature.

[2] In the coating and developing apparatus according to claim 1,

The optical property includes any one of reflectance, refractive index, and extinction coefficient.

[3] The coating and developing apparatus according to claim 1,

A warp measuring unit for measuring a warp amount of each measurement region of the substrate, and the control unit is based on the measured warp amount! /, And the calculated heating temperature of the hot plate in each heating region And the temperature of each heating region of the hot plate is controlled based on the correction value and the heating temperature.

[4] In a resist pattern forming apparatus that applies a resist solution to a substrate having a base film formed on the surface, then exposes the substrate, and further develops the exposed substrate to form a resist pattern.

A storage unit in which correlations between optical properties, exposure amounts, and resist pattern line widths, which are obtained in advance, are stored; An exposure amount is calculated for each region based on the optical properties measured by the optical measurement unit, the target value of the line width of the resist pattern, and the correlation of the storage unit, and the exposure based on the calculated exposure amount And a control unit for controlling the exposure amount of the apparatus.

[5] In the resist pattern forming apparatus according to claim 4,! /,

[6] In the resist pattern forming apparatus according to claim 4,! /,

A warp measurement unit for measuring a warp amount of each measurement region of the substrate; and the control unit calculates an exposure correction amount for correcting the exposure amount of the exposure apparatus in each exposure region based on the measured warp amount. Then, the exposure amount of each exposure area is controlled based on the exposure correction amount and the calculated exposure amount.

[7] In the coating and developing method of forming a resist pattern using a hot plate capable of independently controlling a plurality of heating regions by a plurality of heaters on the exposed substrate, each heating region of the substrate Irradiating light to areas corresponding to, and measuring the optical properties of each area;

Exposing the substrate on which the resist film is formed;

Developing the heated substrate.

[8] The method for forming a resist pattern according to claim 7,

Measuring the amount of warpage of each measurement region of the substrate;

And a step of calculating a correction temperature for correcting the calculated heating temperature based on the measured amount of warpage!

The step of heating the substrate is performed based on the heating temperature and the correction temperature.

[9] How to form a resist pattern on a substrate! /

Heating the exposed substrate; and

Developing a heated substrate;

A method for forming a resist pattern, comprising:

[10] The method for forming a resist pattern according to claim 9,

Measuring the amount of warpage of each measurement region of the substrate;

A step of calculating an exposure correction amount for correcting the calculated exposure amount based on the measured amount of warpage, and

The step of exposing the substrate is performed based on the exposure amount and the exposure correction amount.

[11] A storage medium storing a computer program that operates on a computer, the computer program being an apparatus for forming a resist pattern by applying a resist solution to a substrate having a base film formed on the surface of the substrate Steps are included to carry out a process for developing a paint having the following steps:

In the coating and developing method of forming a resist pattern using a hot plate capable of independently controlling a plurality of heating regions by a plurality of heaters after the exposure, the substrate corresponds to each heating region of the substrate. Irradiating the area with light and measuring the optical properties of each area;

A step of applying a resist solution to the surface of the base film after the optical property measurement to form a resist film; Exposing the substrate on which the resist film is formed;

The optical properties obtained by irradiating the substrate with light on the substrate, the data obtained in advance on the correlation between the heating temperature of the heater and the line width of the resist pattern, and the optical properties of the substrate measured in the step Calculating a heating temperature for each heating region based on the target value of the line width of the resist pattern;

Developing the heated substrate;

A storage medium storing a computer program that operates on a computer, the computer program being used in an apparatus for forming a resist pattern by applying a resist solution to a substrate having a base film formed on the surface of the substrate. Steps are organized to implement a resist pattern forming method having the following steps! /

Data obtained in advance on the correlation between the optical properties obtained by irradiating the substrate underlayer with light, the exposure amount of the exposure apparatus, and the line width of the resist pattern;

Heating the exposed substrate; and

Developing a heated substrate;

A method for forming a resist pattern, comprising: