JP2008035498A5 - - Google Patents

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Publication number
JP2008035498A5
JP2008035498A5 JP2007165106A JP2007165106A JP2008035498A5 JP 2008035498 A5 JP2008035498 A5 JP 2008035498A5 JP 2007165106 A JP2007165106 A JP 2007165106A JP 2007165106 A JP2007165106 A JP 2007165106A JP 2008035498 A5 JP2008035498 A5 JP 2008035498A5
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JP
Japan
Prior art keywords
ring oscillator
semiconductor device
signal
frequency divider
supplied
Prior art date
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Granted
Application number
JP2007165106A
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English (en)
Japanese (ja)
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JP2008035498A (ja
JP5204998B2 (ja
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Priority to JP2007165106A priority Critical patent/JP5204998B2/ja
Priority claimed from JP2007165106A external-priority patent/JP5204998B2/ja
Publication of JP2008035498A publication Critical patent/JP2008035498A/ja
Publication of JP2008035498A5 publication Critical patent/JP2008035498A5/ja
Application granted granted Critical
Publication of JP5204998B2 publication Critical patent/JP5204998B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007165106A 2006-06-30 2007-06-22 半導体装置 Expired - Fee Related JP5204998B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007165106A JP5204998B2 (ja) 2006-06-30 2007-06-22 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006181885 2006-06-30
JP2006181885 2006-06-30
JP2007165106A JP5204998B2 (ja) 2006-06-30 2007-06-22 半導体装置

Publications (3)

Publication Number Publication Date
JP2008035498A JP2008035498A (ja) 2008-02-14
JP2008035498A5 true JP2008035498A5 (https=) 2010-07-22
JP5204998B2 JP5204998B2 (ja) 2013-06-05

Family

ID=39124378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007165106A Expired - Fee Related JP5204998B2 (ja) 2006-06-30 2007-06-22 半導体装置

Country Status (1)

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JP (1) JP5204998B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102165578B (zh) * 2008-09-23 2014-01-29 株式会社半导体能源研究所 用于制造半导体器件的方法
JP5484109B2 (ja) * 2009-02-09 2014-05-07 三菱電機株式会社 電気光学装置
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5916030B2 (ja) * 2012-02-14 2016-05-11 セイコーエプソン株式会社 温度センサー及び電気光学装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3637706B2 (ja) * 1996-11-27 2005-04-13 ソニー株式会社 ディジタル遅延回路およびそれを用いたディジタル制御発振回路
CA2224767A1 (en) * 1996-12-31 1998-06-30 Huang Chaogang Variable cmos vernier delay
JPH1115934A (ja) * 1997-06-24 1999-01-22 Nippon Steel Corp 無電池方式のｒｆｉｄ
JPH11168362A (ja) * 1997-12-02 1999-06-22 Oki Micro Design Miyazaki Co Ltd 遅延回路
JP3748857B2 (ja) * 2002-01-25 2006-02-22 松下電器産業株式会社 半導体集積回路とこれを搭載したデータキャリア

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