JP2008034550A - Wiring substrate for light-emitting element and light-emitting device - Google Patents

Wiring substrate for light-emitting element and light-emitting device Download PDF

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JP2008034550A
JP2008034550A JP2006205101A JP2006205101A JP2008034550A JP 2008034550 A JP2008034550 A JP 2008034550A JP 2006205101 A JP2006205101 A JP 2006205101A JP 2006205101 A JP2006205101 A JP 2006205101A JP 2008034550 A JP2008034550 A JP 2008034550A
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emitting element
light emitting
light
insulating base
metal body
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JP4841348B2 (en
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Masanori Kamimura
正憲 神村
Tomohide Hasegawa
智英 長谷川
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring substrate for light-emitting element and a light-emitting device, which are suppressed in color uneveness and small in size, while being superior in heat dissipation. <P>SOLUTION: The light-emitting device is equipped with an insulating substrate 1 comprising of ceramics, and a sintered metallic body 3 baked and embedded, simultaneously with the insulating substrate 1. The sintered metallic body 3 is provided with an upper end 3a positioned below the upper surface 1a of the insulating substrate 1, and is provided with a recess 5 for receiving the light-emitting element 23, while a connecting electrode 7 electrically connected to the light-emitting element 23 is arranged on the surface 1a of the insulating substrate 1 at the outside of the recess 5. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、発光ダイオード等の発光素子を搭載するための発光素子用配線基板および発光装置に関する。   The present invention relates to a light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode.

従来、LEDを用いた発光装置は、非常に発光効率が高く、しかも、白熱電球などと比較すると発光に伴い発生する熱量が小さいために様々な用途に用いられてきた。しかしながら、白熱電球や蛍光灯などと比較すると発光量が小さいために、照明用ではなく、表示用の光源として用いられ、通電量も30mA程度と非常に小さいものであった。(例えば特許文献1を参照。)。   Conventionally, light emitting devices using LEDs have been used for various applications because of their extremely high luminous efficiency and the small amount of heat generated by light emission compared to incandescent bulbs. However, since it emits less light than incandescent bulbs and fluorescent lamps, it is used as a light source for display rather than for illumination, and the energization amount is very small at about 30 mA. (For example, refer to Patent Document 1).

そして、近年では、発光素子を用いた発光装置の高輝度、白色化に伴い、携帯電話や大型液晶TV等のバックライトに発光装置が多く用いられてきている。しかしながら、発光素子の高輝度化に伴い、発光装置から発生する熱も増加しており、発光素子の輝度の低下をなくす為には、このような熱を素子より速やかに放散する高い熱放散性を有する発光素子用配線基板が必要となっている(例えば特許文献2を参照。)。   In recent years, with the increase in brightness and whiteness of light-emitting devices using light-emitting elements, light-emitting devices have been frequently used for backlights of mobile phones, large liquid crystal TVs, and the like. However, as the brightness of light emitting elements increases, the heat generated from the light emitting device also increases, and in order to eliminate the decrease in the brightness of the light emitting elements, such heat dissipation that dissipates such heat more quickly than the elements is high. There is a need for a light emitting element wiring board having the above (for example, see Patent Document 2).

また、放熱性を考慮した基板構造としては、発光素子で発生した熱を効果的に拡散させるために、金属などの高熱伝導体と発光素子とを構造的に接触させて放熱性を高める配線基板が必要となっている(例えば特許文献3を参照。)。   In addition, as a substrate structure that takes heat dissipation into consideration, in order to effectively diffuse the heat generated in the light emitting element, a high thermal conductor such as metal and the light emitting element are brought into structural contact to increase heat dissipation. (For example, refer to Patent Document 3).

ところが、特許文献3では、絶縁基体に金属体を充填した配線基板が提案されているが、発光素子作動時の昇降温に伴い金属体が絶縁基体から剥離し、実装後の信頼性が劣化する。さらに金属体が絶縁基体から外れ、配線が断裂することによってLEDが機能しなくなる。   However, Patent Document 3 proposes a wiring board in which an insulating base is filled with a metal body. However, the metal body is peeled off from the insulating base as the light emitting element is heated and lowered, and reliability after mounting deteriorates. . Further, the metal body is detached from the insulating base and the wiring breaks, so that the LED does not function.

これに対して、特許文献4では、絶縁基体と同時焼成された貫通金属体が提案されており、放熱性と信頼性に優れた配線基板となっている。(例えば特許文献4を参照。)
また、発光装置には小型であることも求められており、金属からなる放熱基部を設けるとともに、発光素子を収容する凹部を設けた発光素子用配線基板が報告されている(例えば特許文献5を参照。)。
特開2002−134790号公報 特開2003−347600号公報 特許第3259420号公報 特開2006−93565号公報 特開2006−80165号公報
On the other hand, Patent Document 4 proposes a penetrating metal body that is fired at the same time as an insulating substrate, and is a wiring board excellent in heat dissipation and reliability. (For example, see Patent Document 4)
In addition, the light emitting device is also required to be small in size, and a light emitting element wiring board having a heat radiating base made of metal and a recess for accommodating the light emitting element has been reported (for example, Patent Document 5). reference.).
JP 2002-134790 A JP 2003-347600 A Japanese Patent No. 3259420 JP 2006-93565 A JP 2006-80165 A

しかしながら、特許文献4に記載の発明においては、発光素子から発せられる光が貫通導体のみならず絶縁基体や電極に照射されるため、各々の反射率や色調の差により、光の利用効率が低下したり、色むらが生じるなどの欠点がある。   However, in the invention described in Patent Document 4, since light emitted from the light emitting element is irradiated not only to the through conductor but also to the insulating substrate and the electrode, the light utilization efficiency is reduced due to the difference in reflectance and color tone. Or have color irregularities.

これに対し、特許文献5に記載の発明においては、色むらを抑制することはできるものの、放熱基部と絶縁体である下封止部とを別々に作製し両者を熱圧着しているため、放熱基部と下封止部とはそれぞれが部材として破壊や変形することなく取扱が可能な程度の強度、すなわち大きさを確保することが必要となるため小型化が困難であるという欠点がある。   On the other hand, in the invention described in Patent Document 5, although uneven color can be suppressed, since the heat dissipation base and the lower sealing part which is an insulator are separately manufactured and both are thermocompression bonded, Each of the heat dissipating base and the lower sealing portion has a drawback that it is difficult to reduce the size because it is necessary to secure a strength, that is, a size that can be handled without breaking or deforming each member.

したがって、本発明は、光利用効率に優れ、色むらが少なく、放熱性に優れ、小型化が可能な発光素子用配線基板および発光装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a light-emitting element wiring substrate and a light-emitting device that are excellent in light utilization efficiency, have little color unevenness, have excellent heat dissipation, and can be miniaturized.

本発明の発光素子用配線基板は、セラミックスからなる絶縁基体と、該絶縁基体に同時焼成されて埋設された焼結金属体とを具備してなり、該焼結金属体は上端が前記絶縁基体の上面以下に位置しているとともに発光素子を収容する凹部を有しており、該凹部の外側の前記絶縁基体の表面に前記発光素子と電気的に接続される接続電極が配置されていることを特徴とする。   The wiring board for a light-emitting element of the present invention comprises an insulating base made of ceramics and a sintered metal body that is simultaneously fired and embedded in the insulating base, and the upper end of the sintered metal body is the insulating base. And a recess for accommodating the light emitting element, and a connection electrode electrically connected to the light emitting element is disposed on the surface of the insulating base outside the recess. It is characterized by.

また、本発明の発光素子用配線基板は、前記焼結金属体が、前記絶縁基体を貫通するように埋設されていることが望ましい。   In the light-emitting element wiring board of the present invention, it is desirable that the sintered metal body is embedded so as to penetrate the insulating base.

また、本発明の発光素子用配線基板は、前記絶縁基体の下面に接続端子が配置されるとともに、該接続端子と前記接続電極とが前記絶縁基体の内部に設けられた内部配線によって電気的に接続され、前記発光素子用配線基板の厚み方向において、前記接続端子と前記焼結金属体とが前記絶縁基体を介して重なるように配置されていることが望ましい。   The wiring board for a light-emitting element according to the present invention has a connection terminal disposed on the lower surface of the insulating base, and the connection terminal and the connection electrode are electrically connected by an internal wiring provided inside the insulating base. It is desirable that the connection terminals and the sintered metal body are arranged so as to overlap with each other through the insulating base in the thickness direction of the light emitting element wiring board.

また、本発明の発光装置は、以上説明した発光素子用配線基板の前記凹部に発光素子が収容され、該発光素子の電極が前記発光素子用配線基板の前記接続電極に電気的に接続されていることを特徴とする。   In the light emitting device of the present invention, the light emitting element is accommodated in the recess of the light emitting element wiring board described above, and the electrode of the light emitting element is electrically connected to the connection electrode of the light emitting element wiring board. It is characterized by being.

本発明の発光素子用配線基板は、発光素子を収容する凹部を備えた焼結金属体をセラミックスからなる絶縁基体とを同時焼成して、焼結金属体を絶縁基体に埋設することで小型化することが容易となる。また、発光素子から発せられる光の大半が焼結金属体に照射され、絶縁基体や配線に照射されないため、各々の反射率や色調の差による光の利用効率の低下や、色むらが生じないことから、光利用効率を高くすることができ、色むらを少なくすることが可能となる。   The wiring board for a light-emitting element of the present invention is miniaturized by simultaneously firing a sintered metal body having a recess for housing the light-emitting element and an insulating base made of ceramics and embedding the sintered metal body in the insulating base. Easy to do. In addition, since most of the light emitted from the light emitting element is irradiated to the sintered metal body and not to the insulating substrate or the wiring, the light use efficiency is not lowered due to the difference in reflectance and color tone, and color unevenness does not occur. As a result, the light utilization efficiency can be increased and the color unevenness can be reduced.

さらに、焼結金属体を、絶縁基体を貫通するようにして設けることで、発光素子からの発熱を凹部底面から発光素子が搭載されている反対側の主面へも装置外へ放出することができるため、発光素子が過剰に加熱されることを防止でき、さらに高輝度にすることが可能となる。   Furthermore, by providing the sintered metal body so as to penetrate the insulating base, heat generated from the light emitting element can be released from the bottom surface of the recess to the opposite main surface on which the light emitting element is mounted. Therefore, it is possible to prevent the light emitting element from being excessively heated and to further increase the luminance.

また、発光素子用配線基板の下面に接続端子を設け、発光素子用配線基板の厚み方向において、絶縁基体に比べ熱伝導性に優れた接続端子と焼結金属体とが絶縁基体を介して重なるように配置することで接続端子の面積を確保しながら、発光素子用配線基板の放熱性も維持することができる。   In addition, a connection terminal is provided on the lower surface of the light-emitting element wiring board, and the connection terminal having excellent thermal conductivity compared to the insulating base and the sintered metal body overlap with each other through the insulating base in the thickness direction of the light-emitting element wiring board. By arranging in this way, it is possible to maintain the heat dissipation of the wiring board for light emitting element while securing the area of the connection terminal.

以上説明した本発明の発光素子用配線基板に発光素子を搭載した本発明の発光装置によれば、小型で、色むらが少なく、放熱性に優れた発光装置となる。   According to the light emitting device of the present invention in which the light emitting element is mounted on the wiring substrate for light emitting element of the present invention described above, the light emitting device is small, has little color unevenness, and has excellent heat dissipation.

本発明の発光素子用配線基板は、例えば、図1(a)、(b)、(c)に示すように、セラミックスからなる絶縁基体1と、この絶縁基体1に同時焼成されて埋設された焼結金属体3とを具備しており、この焼結金属体3は、焼結金属体3の上端3aが絶縁基体1の上面1a以下に位置しているとともに、発光素子を収容する凹部5を有しており、この凹部5の外側の絶縁基体1の表面1aに発光素子と電気的に接続される接続電極7が配置されている。   The light-emitting element wiring board of the present invention is embedded in an insulating base 1 made of ceramics and simultaneously fired in the insulating base 1, as shown in FIGS. 1 (a), 1 (b), and (c), for example. The sintered metal body 3 includes a recessed metal 5 in which the upper end 3a of the sintered metal body 3 is positioned below the upper surface 1a of the insulating substrate 1 and which houses the light emitting element. A connection electrode 7 that is electrically connected to the light emitting element is disposed on the surface 1 a of the insulating base 1 outside the recess 5.

このように焼結金属体3が絶縁基体1と同時焼成されて埋設されていることから、焼結金属体3と絶縁基体1とを一体的に形成することができるため、個別に作成し、組み立てる必要がないため、小型の発光素子用配線基板9を容易に作製することができる。   Since the sintered metal body 3 is simultaneously fired and embedded in the insulating base 1, the sintered metal body 3 and the insulating base 1 can be integrally formed. Since it is not necessary to assemble, the small light emitting element wiring board 9 can be easily manufactured.

また、焼結金属体3の上端3aを絶縁基体1の上面1a以下に位置させるとは、焼結金属体3の上端3を絶縁基体1の上面1aと一致させるか、あるいは焼結金属体3を絶縁基体1の内側に配置することである。焼結金属体3をこのように配置することにより発光素子用配線基板9の低背化を容易に達成できる。   Further, the upper end 3a of the sintered metal body 3 is positioned below the upper surface 1a of the insulating base body 1 so that the upper end 3 of the sintered metal body 3 coincides with the upper surface 1a of the insulating base body 1 or the sintered metal body 3 Is disposed inside the insulating substrate 1. By arranging the sintered metal body 3 in this way, it is possible to easily achieve a reduction in the height of the light emitting element wiring substrate 9.

また、発光素子用配線基板9の下面1bに接続端子11を設け、絶縁基体1の内部に配置された内部配線13によって、接続端子11と接続電極7とを電気的に接続することで、立体的な電気回路を内蔵させて発光素子用配線基板9を小型化することができる。   Further, the connection terminal 11 is provided on the lower surface 1b of the light emitting element wiring substrate 9, and the connection terminal 11 and the connection electrode 7 are electrically connected by the internal wiring 13 disposed inside the insulating base 1, thereby realizing a three-dimensional structure. A light-emitting element wiring board 9 can be reduced in size by incorporating a typical electric circuit.

また、本発明によれば、発光素子から出力される光の大半は、そのまま出力されるか、凹部5の底面5aあるいは凹部の内壁面5bに反射されるため、反射光の色むらが生じにくいという利点もある。   Further, according to the present invention, most of the light output from the light emitting element is output as it is or is reflected by the bottom surface 5a of the recess 5 or the inner wall surface 5b of the recess, so that uneven color of the reflected light hardly occurs. There is also an advantage.

特に、焼結金属体3は、放熱性の観点から厚みが厚いことが望ましい。そして、特に、図1(b)に示すように焼結金属体3が絶縁基体1を貫通するように埋設されていることが放熱性を向上させる観点から望ましい。なお、焼結金属体3が絶縁基体1を貫通する形態とは、絶縁基体1を貫通するように形成された貫通孔の上下方向にわたって焼結金属体3が配置されている形態を意味している。   In particular, the sintered metal body 3 is preferably thick from the viewpoint of heat dissipation. In particular, as shown in FIG. 1B, it is desirable that the sintered metal body 3 is embedded so as to penetrate the insulating base 1 from the viewpoint of improving heat dissipation. The form in which the sintered metal body 3 penetrates the insulating base 1 means a form in which the sintered metal body 3 is arranged in the vertical direction of the through hole formed so as to penetrate the insulating base 1. Yes.

放熱性に限っていえば、図1(b)のように焼結金属体3の側壁が垂直となるようにするか、あるいは発光素子用配線基板9の下面側で焼結金属体3が大きくなるようにすることが望ましい。   If the heat dissipation is limited, the side wall of the sintered metal body 3 is made vertical as shown in FIG. 1B, or the sintered metal body 3 becomes larger on the lower surface side of the wiring board 9 for light emitting elements. It is desirable to do so.

しかしながら、このような形態では接続端子11の面積を大きくすることが困難となるために、本発明の発光素子用配線基板9を用いた発光装置を外部回路基板に実装する際に位置決めが困難となる場合がある。   However, since it is difficult to increase the area of the connection terminal 11 in such a form, it is difficult to position the light-emitting device using the light-emitting element wiring board 9 of the present invention when mounted on the external circuit board. There is a case.

そのため、図1(c)に示すように発光素子用配線基板9の下面側で焼結金属体3が小さくなるように焼結金属体3の側面に段差を設けることで、絶縁基体1を貫通するように焼結金属体3を設けた場合であっても接続端子を大きくすることができる。   Therefore, as shown in FIG. 1C, a step is provided on the side surface of the sintered metal body 3 so that the sintered metal body 3 becomes smaller on the lower surface side of the light emitting element wiring substrate 9, thereby penetrating the insulating substrate 1. Even when the sintered metal body 3 is provided as described above, the connection terminal can be enlarged.

そして、図1(c)に示すように、発光素子用配線基板9の厚み方向において、接続端子11と焼結金属体3とが絶縁基体1を介して重なるように配置した場合には外部回路基板への実装性が向上するとともに、焼結金属体3と接続端子11との間に絶縁基体1が介在はするものの熱伝導性に優れた焼結金属体3と接続端子11とを近づけることができるため、熱伝導性に優れた距離の小さな熱伝達経路を形成することができるため、放熱性にも優れたものとなる。   As shown in FIG. 1C, when the connection terminal 11 and the sintered metal body 3 are arranged so as to overlap with each other with the insulating base 1 in the thickness direction of the light emitting element wiring substrate 9, an external circuit is provided. The mounting property to the substrate is improved and the sintered metal body 3 and the connection terminal 11 having excellent thermal conductivity are brought close to each other although the insulating base 1 is interposed between the sintered metal body 3 and the connection terminal 11. Therefore, it is possible to form a heat transfer path with a small distance and excellent thermal conductivity, and thus excellent heat dissipation.

すなわち、図1(a)、(b)、(c)の形態のうち、図1(b)に示す形態の発光素子用配線基板9が放熱性の観点からは最も優れている。一方、放熱性は若干劣るものの、図1(a)、(c)に示す形態の発光素子用配線基板9は、外部回路基板との実装性に優れるという利点がある。   That is, among the forms of FIGS. 1A, 1B, and 1C, the light emitting element wiring substrate 9 of the form shown in FIG. 1B is most excellent from the viewpoint of heat dissipation. On the other hand, although the heat dissipation is slightly inferior, the light-emitting element wiring substrate 9 shown in FIGS. 1A and 1C has an advantage of being excellent in mountability with an external circuit substrate.

なお、接続端子11と焼結金属体3とが絶縁基体1を介して重なるとは、発光素子用配線基板9の上方向から垂直に絶縁基体1を透過するように見たときに接続端子11と焼結金属体3とが少なくとも一部で重なり合うように配置されていることを意味している。   Note that the connection terminal 11 and the sintered metal body 3 overlap with each other through the insulating base 1 when the connection terminal 11 is viewed through the insulating base 1 perpendicularly from above the light emitting element wiring substrate 9. And the sintered metal body 3 are arranged so as to overlap at least partially.

発光素子用配線基板9の下面において、焼結金属体3の露出する面積が等しい場合には、接続端子11と焼結金属体3とが重なる面積は大きいほど放熱性が向上する。また、発光素子用配線基板9を半田などを介して外部基板に実装する場合には、多少の位置ずれが生じた場合であっても、物理的に位置ずれの許容範囲が大きくなるとともに、溶融した半田の表面表力によるアライメントの効果が増大するため、実装性が高くなる。   When the exposed area of the sintered metal body 3 is equal on the lower surface of the light emitting element wiring substrate 9, the heat dissipation improves as the area where the connection terminal 11 and the sintered metal body 3 overlap increases. Further, when the light emitting element wiring board 9 is mounted on an external board via solder or the like, even if a slight misalignment occurs, the tolerance of physical misalignment is increased and melting is performed. Since the effect of alignment due to the surface force of the solder is increased, the mountability is improved.

また、接続端子11と焼結金属体3との間に介在する絶縁基体1の厚みは薄いほど放熱性が向上するが、絶縁性を確保する観点から30μm以上とすることが望ましい。   Further, the thinner the insulating substrate 1 interposed between the connection terminal 11 and the sintered metal body 3, the better the heat dissipation. However, from the viewpoint of securing the insulating property, it is preferably 30 μm or more.

この絶縁基板1となるセラミックスとしては、安価で製造しやすい点ではAlを主結晶相とするAl質焼結体が優れている。また、高価ではあるが、熱伝導性、強度に優れたAlN質焼結体やSi質焼結体を用いてもよい。 As the ceramic used as the insulating substrate 1, an Al 2 O 3 -based sintered body having Al 2 O 3 as a main crystal phase is excellent in that it is inexpensive and easy to manufacture. Further, there is expensive, but thermally conductive, may be used better AlN sintered body and Si 3 N 4 quality sintered body strength.

また、この発光素子用配線基板9に用いる絶縁基体1の熱膨張係数を8.5×10−6/℃以上とすることで、焼結金属体や外部のプリント基板などとの接続信頼性を格段に高くすることができる。また、搭載される発光素子を被覆するために設けられる封止樹脂などとの接合信頼性も同時に改善されることはいうまでもない。特に、9.0×10−6/℃以上が好ましく、10.0×10−6/℃以上がより好ましく、例えば、8.5×10−6/℃以上の絶縁基体1は、フォルステライトやMgOを用いることにより作製することができる。また、10.0×10−6/℃以上の絶縁基体1は、MgOを用いることにより作製することができる。 Further, by setting the thermal expansion coefficient of the insulating substrate 1 used for the light emitting element wiring substrate 9 to 8.5 × 10 −6 / ° C. or more, the connection reliability with a sintered metal body or an external printed board can be improved. It can be much higher. Needless to say, the reliability of bonding with a sealing resin or the like provided to cover the light emitting element to be mounted is also improved. In particular, 9.0 × 10 −6 / ° C. or higher is preferable, and 10.0 × 10 −6 / ° C. or higher is more preferable. For example, the insulating substrate 1 of 8.5 × 10 −6 / ° C. or higher is forsterite or It can be produced by using MgO. Further, the insulating substrate 1 of 10.0 × 10 −6 / ° C. or higher can be produced by using MgO.

また、発光素子用配線基板9に用いる絶縁基体1の熱伝導率を30W/m・K以上とすることで、絶縁基体1自体からの熱放散性が向上し、発光素子の輝度低下を防ぐことが可能となる。特に、35W/m・K以上が好ましく、更には40W/m・K以上が好ましく、最も好適には、45W/m・K以上が良い。例えば、30W/m・K以上の絶縁基体は、純度99%以上の高純度アルミナやMgOを用いることにより作製することができる。   Further, by setting the thermal conductivity of the insulating base 1 used for the light emitting element wiring substrate 9 to 30 W / m · K or more, the heat dissipation from the insulating base 1 itself is improved, and the luminance of the light emitting element is prevented from being lowered. Is possible. In particular, it is preferably 35 W / m · K or more, more preferably 40 W / m · K or more, and most preferably 45 W / m · K or more. For example, an insulating substrate of 30 W / m · K or higher can be manufactured by using high-purity alumina or MgO having a purity of 99% or higher.

また、この絶縁基体1として、Alを主結晶相とするAl質焼結体を用いたばあいには、安価な原料を使用でき、安価な発光素子用配線基板9を得ることができる。 Further, when an Al 2 O 3 sintered body having Al 2 O 3 as a main crystal phase is used as the insulating base 1, an inexpensive raw material can be used, and an inexpensive wiring board 9 for a light-emitting element is formed. Obtainable.

なお、Alを主結晶相とするAl質焼結体とは、例えば、X線回折によって、Alのピークが主ピークとして検出されるようなもので、Alの結晶を体積比率として、50体積%以上含有していることが望ましい。 Note that the Al 2 O 3 and Al 2 O 3 quality sintered body composed mainly crystalline phase, for example, by X-ray diffraction, is like the peak of Al 2 O 3 is detected as the main peak, Al 2 It is desirable to contain 50 volume% or more of O 3 crystals as a volume ratio.

また、このような焼結体は、例えば、平均粒径1.0〜2.0μmの純度99%以上のAl粉末に、平均粒径1.0〜2.0μmのMn、SiO、MgO、SrO、CaOの群から選ばれる少なくとも1種の焼結助剤を添加した成形体を1300〜1500℃の温度範囲で焼成することによって得られるものである。 Moreover, such a sintered compact is made of, for example, Al 2 O 3 powder having an average particle diameter of 1.0 to 2.0 μm and a purity of 99% or more, and Mn 2 O 3 having an average particle diameter of 1.0 to 2.0 μm. , SiO 2 , MgO, SrO, CaO. A molded body to which at least one sintering aid selected from the group consisting of CaO is added is fired in a temperature range of 1300 to 1500 ° C.

そして、焼結助剤などのAl以外の組成物の添加量については、Alを主結晶とする緻密体を得るために、望ましくは15質量%以下、更に望ましくは、10質量%以下とすることが望ましい。特に、焼結助剤などのAl以外の組成物の添加量を15質量%以下とした場合には、得られる絶縁基体1の大部分をAl結晶により形成することができる。また、これらの焼結助剤は、焼成温度を低くするために5質量%以上、さらには7質量%以上添加することが望ましい。 And, for the addition amount of Al 2 O 3 other than the compositions, such as sintering aids, in order to obtain a dense body of the Al 2 O 3 as a main crystal, preferably 15 wt% or less, more desirably, 10 It is desirable to set it as the mass% or less. In particular, when the amount of the composition other than Al 2 O 3 such as a sintering aid is set to 15% by mass or less, most of the obtained insulating substrate 1 can be formed of Al 2 O 3 crystals. . These sintering aids are preferably added in an amount of 5% by mass or more, and more preferably 7% by mass or more in order to lower the firing temperature.

このようなAlを主成分とする組成物に、さらに、バインダ、溶剤を添加して、スラリーを作製し、例えば、ドクターブレード法により、シート状の成形体を作製し、さらに、その表面や、シート状の成形体に設けた貫通孔などに、少なくとも金属粉末を含有する導体ペーストを印刷、充填したのち、このシートを積層し、酸化雰囲気、還元雰囲気、あるいは不活性雰囲気で焼成することで、絶縁基体1に、接続電極7、接続端子11、貫通導体13が配置された、配線回路を備えた発光素子用配線基板9を作製することができる。また、配線回路は、薄膜法により絶縁基板1の表面に形成したり、金属箔を成形体の表面に転写するなどして形成できることはいうまでもない。 A binder and a solvent are further added to such a composition containing Al 2 O 3 as a main component to produce a slurry. For example, a sheet-like molded article is produced by a doctor blade method, After printing and filling a conductive paste containing at least metal powder on the surface or through-holes provided in the sheet-like molded body, this sheet is laminated and fired in an oxidizing atmosphere, a reducing atmosphere, or an inert atmosphere. Thereby, the wiring board 9 for light emitting elements provided with the wiring circuit by which the connection electrode 7, the connection terminal 11, and the penetration conductor 13 are arrange | positioned at the insulating base | substrate 1 is producible. Needless to say, the wiring circuit can be formed on the surface of the insulating substrate 1 by a thin film method or by transferring a metal foil onto the surface of the molded body.

配線回路に用いる導体は、導体成分としてW、Mo、Cu、Agのうち少なくとも1種を主成分とし、これにセラミック粉末を0〜5重量%の割合で添加したものにアクリル系バインダ及びアセトンを溶媒として混合し、導体ペーストを調整し、スクリーン印刷法等を用いて、セラミックグリーンシート上に印刷塗布することにより形成できる。   The conductor used for the wiring circuit is composed mainly of at least one of W, Mo, Cu, and Ag as a conductor component, and ceramic binder added at a ratio of 0 to 5% by weight with an acrylic binder and acetone. It can be formed by mixing as a solvent, preparing a conductive paste, and printing and applying it on a ceramic green sheet using a screen printing method or the like.

また、焼結金属体3は、セラミックグリーンシートと、このセラミックグリーンシートと実質的に同一厚みの金属材料からなる金属シートを作製する工程と、セラミックグリーンシートの所定箇所に貫通孔を形成する工程と、貫通孔を形成したセラミックグリーンシートにあらかじめ貫通孔を形成しておいた金属シート、あるいは貫通孔を形成していない金属シートを積層する工程と、セラミックグリーンシートにおける貫通孔形成部分を金属シート側から押圧することによって、金属シートの一部を前記貫通孔内に埋め込み、セラミックグリーンシートと金属シートとを一体化した成形体を同時焼成することで形成できる。   The sintered metal body 3 includes a step of producing a ceramic green sheet, a metal sheet made of a metal material having substantially the same thickness as the ceramic green sheet, and a step of forming a through hole at a predetermined location of the ceramic green sheet. A step of laminating a metal sheet in which through holes are formed in advance on a ceramic green sheet in which through holes are formed or a metal sheet in which through holes are not formed, and a through hole forming portion in the ceramic green sheet is a metal sheet By pressing from the side, a part of the metal sheet can be embedded in the through hole, and a formed body in which the ceramic green sheet and the metal sheet are integrated can be formed by simultaneous firing.

このような金属シートは、W、Mo、Cu、Agのうち少なくとも1種を主成分とし、これにセラミック粉末を0〜5重量%の割合で添加したものに有機樹脂(バインダ)及びトルエンを溶媒として混合し、スラリーを作製し、ドクターブレード法等を用いてシート成形することにより形成できる。   Such a metal sheet is mainly composed of at least one of W, Mo, Cu, and Ag, and ceramic powder is added to this at a ratio of 0 to 5% by weight with an organic resin (binder) and toluene as a solvent. To form a slurry, and then formed into a sheet using a doctor blade method or the like.

また、凹部5には、金属面が露出しているので、別の工程で導体を印刷する必要はないため、Ni、Au、Ag、Alなどからなるめっき層(図示せず)を容易に形成でき、光利用効率を向上させることができる。   In addition, since the metal surface is exposed in the recess 5, it is not necessary to print a conductor in a separate process, so a plating layer (not shown) made of Ni, Au, Ag, Al or the like is easily formed. And the light utilization efficiency can be improved.

そして、以上説明した本発明の発光素子用配線基板9に、例えば、図2(a)、(b)に示すように発光素子23として、LEDチップ23などを半田や樹脂などの接着剤25を介して搭載し、ボンディングワイヤ27により発光素子23の端子(図示せず)と接続電極7とを接続し、凹部5に収容された発光素子23、ボンディングワイヤ27並びに接続電極7を覆うように封止樹脂29で覆うようにすることで、本発明の発光装置31となる。   Then, for example, as shown in FIGS. 2 (a) and 2 (b), the LED chip 23 or the like, or an adhesive 25 such as solder or resin is applied to the light emitting element wiring board 9 of the present invention described above. The terminal (not shown) of the light emitting element 23 and the connection electrode 7 are connected by the bonding wire 27 and sealed so as to cover the light emitting element 23, the bonding wire 27 and the connection electrode 7 accommodated in the recess 5. By covering with the stopping resin 29, the light emitting device 31 of the present invention is obtained.

また、本発明の発光装置31においては、特に発光素子23の上端が絶縁基板1の上面1a以下に位置するように凹部5の深さを調節することが望ましく、これにより発光素子23から出力された光が凹部5の底面5aおよび凹部の内壁面5bのみで反射されるため色むらを抑制することができる。   Further, in the light emitting device 31 of the present invention, it is desirable to adjust the depth of the concave portion 5 so that the upper end of the light emitting element 23 is located below the upper surface 1 a of the insulating substrate 1. Since the reflected light is reflected only by the bottom surface 5a of the recess 5 and the inner wall surface 5b of the recess, uneven color can be suppressed.

なお、必要に応じて、この封止樹脂29に発光素子23が放射する光を波長変換するための蛍光体(図示せず)を添加してもよい。   In addition, you may add the fluorescent substance (not shown) for wavelength-converting the light which the light emitting element 23 radiates | emits to this sealing resin 29 as needed.

また、以上説明した例では、内部配線13を設けた例について説明したが、内部配線13を設けない場合であってもよいことは勿論である。   In the example described above, the example in which the internal wiring 13 is provided has been described, but it is needless to say that the internal wiring 13 may not be provided.

なお、図1(a)、(b)、(c)および図2(a)、(b)の例では焼結金属体3の上から見た大きさは、図における金属焼結体3の幅が同じ部分では一定となっており、上から見た形状は、四角であっても、円であってもよく、必要に応じ種々の形状とすればよい。   In addition, in the example of FIG. 1 (a), (b), (c) and FIG. 2 (a), (b), the magnitude | size seen from the top of the sintered metal body 3 is the metal sintered body 3 in a figure. The portions having the same width are constant, and the shape viewed from above may be a square or a circle, and various shapes may be used as necessary.

原料粉末として純度99%以上、平均粒径が1.5μmのAl粉末を90質量%、純度99%以上、平均粒子径1.3μmのMn粉末を5質量%、純度99%以上、平均粒径1.0μmのSiO粉末を5質量%で原料粉末を混合し、成形用有機樹脂(バインダ)としてアクリル系バインダと、トルエンを溶媒として混合し、スラリーを調整した。 As a raw material powder, an Al 2 O 3 powder having a purity of 99% or more and an average particle diameter of 1.5 μm is 90% by mass, a purity of 99% or more, an Mn 2 O 3 powder having an average particle diameter of 1.3 μm is 5% by mass, and a purity of 99 The raw material powder was mixed with 5% by mass of SiO 2 powder having an average particle size of 1.0 μm or more and a slurry was prepared by mixing an acrylic binder as a molding organic resin (binder) and toluene as a solvent.

しかる後に、ドクターブレード法にてセラミックグリーンシートを作製した。   Thereafter, a ceramic green sheet was prepared by a doctor blade method.

また、平均粒子径1.5μmのW粉末を50質量%および平均粒子径3.5μmのCu粉末を50質量%で金属粉末とアクリル系バインダとアセトンとを溶媒として混合し、導体ペーストを調製した。   Also, a conductive paste was prepared by mixing 50% by mass of W powder with an average particle size of 1.5 μm and 50% by mass of Cu powder with an average particle size of 3.5 μm using a metal powder, an acrylic binder, and acetone as a solvent. .

また、金属シートは、導体ペーストと同様の割合で金属粉末と成形用有機樹脂(バインダ)としてアクリル系バインダと、トルエンを溶媒として混合し、金属シートとなる金属スラリーを調整した。しかる後に、この金属スラリーを用いてドクターブレード法にてセラミックグリーンシートと実質的に同一厚みの金属シートを作製した。   The metal sheet was prepared by mixing a metal powder and an acrylic binder as a molding organic resin (binder) and toluene as a solvent at the same ratio as the conductor paste to prepare a metal slurry to be a metal sheet. Thereafter, a metal sheet having substantially the same thickness as that of the ceramic green sheet was produced using this metal slurry by a doctor blade method.

そして、上記のセラミックグリーンシートに対して、打ち抜き加工を施し、直径が100μmのビアホールを形成し、このビアホール内に、導体ペーストをスクリーン印刷法によって充填するとともに、配線パターン状に印刷塗布した。   The ceramic green sheet was punched to form a via hole having a diameter of 100 μm. The via hole was filled with a conductive paste by a screen printing method and printed and applied in a wiring pattern.

そして、焼成後の厚みが200μmとなるセラミックグリーンシートの所定箇所に貫通穴を形成し、セラミックグリーンシートにおける焼結金属体形成部分を金属シートから押圧することによって、金属シートの一部を貫通穴内に埋め込み、セラミックグリーンシートと金属シートとを一体化した。   And a through-hole is formed in the predetermined location of the ceramic green sheet whose thickness after baking becomes 200 micrometers, and a part of metal sheet is penetrated in a through-hole by pressing the sintered metal body formation part in a ceramic green sheet from a metal sheet. Embedded in a ceramic green sheet and a metal sheet.

また、発光素子を収容する凹部は、金属シートに壁面が斜めになるように打ち抜き加工を施して形成した。このように壁面を斜めとするためには、例えば、打ち抜き加工を施した金属シートに壁面が斜めになるように金型を押しあててもよいが、ここでは、以下のようにして作製した。   Moreover, the recessed part which accommodates a light emitting element was formed by giving a punching process so that a wall surface might become slanting. In order to make the wall surface slant as described above, for example, a die may be pressed against a punched metal sheet so that the wall surface is slanted.

すなわち、打ち抜きピンの外形寸法よりも、ダイスの内径寸法が異なり、ダイスの内径寸法が大きな金型を用いて逆テーパー状の凹部を形成した。   That is, the reverse taper-shaped concave portion was formed by using a die having an inner diameter dimension of the die different from that of the punching pin and having a larger inner diameter dimension of the die.

この時、あらかじめ絶縁層に金属シートを埋め込んだものを2枚、位置を合わせて積層して用意した。なお、焼結金属体は、発光素子用配線基板の略中心に配置されるように形成した。   At this time, two sheets in which a metal sheet was embedded in advance in an insulating layer were prepared by aligning the positions. In addition, the sintered metal body was formed so as to be disposed substantially at the center of the light emitting element wiring board.

このようにして、例えば、図1(a)に示すような焼成後に外形5mm×5mm×厚み0.8mmとなる積層体を作製した。また、この積層体は焼成後に3mm角の焼結金属体に深さが200μmで、底面の寸法が1mm角、開口部の寸法が1.4mm角の凹部が形成されるものである。   In this way, for example, a laminate having an outer shape of 5 mm × 5 mm × thickness 0.8 mm after firing as shown in FIG. In addition, this laminated body is formed by forming a concave portion having a depth of 200 μm, a bottom size of 1 mm square, and an opening size of 1.4 mm square in a 3 mm square sintered metal body after firing.

そして、露点+25℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点+25℃の窒素水素混合雰囲気にて1300〜1700℃の最高温度で2時間焼成した。そして、絶縁基体の一方の主面に接続電極を備え、他方の主面に接続端子を備え、そして両者を内部配線で接続した発光素子用配線基板を作製した。   Then, after degreasing in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C., it was subsequently fired for 2 hours at a maximum temperature of 1300 to 1700 ° C. in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C. And the wiring board for light emitting elements which provided the connection electrode in one main surface of the insulating base | substrate, provided the connection terminal in the other main surface, and connected both with the internal wiring was produced.

その後、焼結金属体、接続電極並びに接続端子の表面にNi、AuおよびAgめっきを順次施した。   Thereafter, Ni, Au, and Ag plating were sequentially applied to the surfaces of the sintered metal body, the connection electrode, and the connection terminal.

これらの発光素子用配線基板に接着剤としてエポキシ樹脂を用いて出力1.5Wの発光素子であるLEDチップをその上端が凹部の中に完全に収容されるように搭載部に実装し、ボンディングワイヤによりLEDチップと接続端子とを結線し、さらに、LEDチップと接続端子とを熱膨張係数が40×10−6/℃のシリコーン樹脂からなる封止樹脂で覆い発光装置を得た。 An LED chip, which is a light emitting element with an output of 1.5 W, is mounted on the wiring board for these light emitting elements using an epoxy resin as an adhesive so that the upper end of the LED chip is completely accommodated in the concave portion. Then, the LED chip and the connection terminal were connected, and the LED chip and the connection terminal were further covered with a sealing resin made of a silicone resin having a thermal expansion coefficient of 40 × 10 −6 / ° C. to obtain a light emitting device.

また、発光装置に0.4Aの電流を通電し、色むらの有無を目視にて判断した。また、通電から1時間後に全放射束を測定した。この全放射束が大きいものほど放熱性に優れていると判断できる。   Further, a current of 0.4 A was passed through the light emitting device, and the presence or absence of color unevenness was visually determined. In addition, the total radiant flux was measured 1 hour after energization. It can be determined that the larger the total radiant flux, the better the heat dissipation.

以上の工程により作製した発光素子用配線基板の試験結果を表1に示す。なお、表中に焼結金属体の全体の厚みが記載してあるが、焼結金属体は凹部から連続して積層されており、例えば、焼結金属体の合計厚みが600μmの場合には3層連続して焼結金属体が形成された下に絶縁基体が1層形成されたことを示している。   Table 1 shows the test results of the light-emitting element wiring substrate manufactured through the above steps. In addition, although the total thickness of the sintered metal body is described in the table, the sintered metal body is continuously laminated from the concave portion. For example, when the total thickness of the sintered metal body is 600 μm It shows that one layer of the insulating base is formed under the formation of the sintered metal body in three consecutive layers.

また、表1において、重なりの有無の欄で有と記載された試料は、発光素子用配線基板の厚み方向において焼結金属体と接続電極とが3mm×1.1mmの面積で重なっているものである。

Figure 2008034550
Moreover, in Table 1, the sample described as “Yes” in the column of whether or not there is overlap is one in which the sintered metal body and the connection electrode overlap with each other in an area of 3 mm × 1.1 mm in the thickness direction of the wiring board for light emitting elements. It is.
Figure 2008034550

表1に示すように、凹部も焼結金属体もない本発明の範囲外である試料No.1では色むらがあり、全放射束が低かった。   As shown in Table 1, there are no recesses or sintered metal bodies, and sample No. In 1, there was uneven color and the total radiant flux was low.

一方、本発明の試料No.2〜5では、色むらが全く確認できず、全放射束も高いものであった。   On the other hand, sample no. In Nos. 2 to 5, color unevenness could not be confirmed at all, and the total radiant flux was also high.

本発明の発光素子用配線基板の断面図である。It is sectional drawing of the wiring board for light emitting elements of this invention. 本発明の発光装置の断面図である。It is sectional drawing of the light-emitting device of this invention.

符号の説明Explanation of symbols

1・・・絶縁基体
1a・・・絶縁基体の上面
1b・・・絶縁基体の下面
3・・・焼結金属体
3a・・・焼結金属体の上端
5・・・凹部
7・・・接続電極
9・・・発光素子用配線基板
11・・・接続端子
13・・・内部配線
11・・・封止部
15・・・発光素子用配線基板
23・・・発光素子
31・・・発光装置
DESCRIPTION OF SYMBOLS 1 ... Insulating base | substrate 1a ... Upper surface 1b of an insulating base | substrate ... Lower surface 3 of an insulating base | substrate ... Sintered metal body 3a ... Upper end 5 of a sintered metal body ... Recessed part 7 ... Connection Electrode 9 ... Light emitting element wiring substrate 11 ... Connection terminal 13 ... Internal wiring 11 ... Sealing part 15 ... Light emitting element wiring substrate 23 ... Light emitting element 31 ... Light emitting device

Claims (4)

セラミックスからなる絶縁基体と、該絶縁基体に同時焼成されて埋設された焼結金属体とを具備してなり、該焼結金属体は上端が前記絶縁基体の上面以下に位置しているとともに発光素子を収容する凹部を有しており、該凹部の外側の前記絶縁基体の表面に前記発光素子と電気的に接続される接続電極が配置されていることを特徴とする発光素子用配線基板。 An insulating base made of ceramics and a sintered metal body that is simultaneously fired and embedded in the insulating base, and the upper end of the sintered metal body is located below the upper surface of the insulating base and emits light. A wiring board for a light-emitting element, comprising: a concave portion that accommodates an element; and a connection electrode that is electrically connected to the light-emitting element is disposed on a surface of the insulating base outside the concave portion. 前記焼結金属体が、前記絶縁基体を貫通するように埋設されていることを特徴とする請求項1に記載の発光素子用配線基板。 The light emitting element wiring board according to claim 1, wherein the sintered metal body is embedded so as to penetrate the insulating base. 前記絶縁基体の下面に接続端子が配置されるとともに、該接続端子と前記接続電極とが前記絶縁基体の内部に設けられた内部配線によって電気的に接続され、前記発光素子用配線基板の厚み方向において、前記接続端子と前記焼結金属体とが前記絶縁基体を介して重なるように配置されていることを特徴とする請求項1または2に記載の発光素子用配線基板。 A connection terminal is disposed on the lower surface of the insulating base, and the connection terminal and the connection electrode are electrically connected by an internal wiring provided inside the insulating base, and the thickness direction of the wiring board for the light emitting element 3. The wiring board for a light emitting element according to claim 1, wherein the connection terminal and the sintered metal body are arranged so as to overlap with each other with the insulating base interposed therebetween. 請求項1乃至3のいずれかに記載の発光素子用配線基板の前記凹部に発光素子が収容され、該発光素子の電極が前記発光素子用配線基板の前記接続電極に電気的に接続されていることを特徴とする発光装置。

4. The light emitting element is accommodated in the concave portion of the light emitting element wiring substrate according to claim 1, and an electrode of the light emitting element is electrically connected to the connection electrode of the light emitting element wiring substrate. A light emitting device characterized by that.

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JP2012009834A (en) * 2010-05-26 2012-01-12 Toshiba Lighting & Technology Corp Light emitting device and lighting system
US8592855B2 (en) 2008-05-23 2013-11-26 Lg Innotek Co., Ltd. Light emitting device package including a substrate having at least two recessed surfaces
US10041659B2 (en) 2013-08-30 2018-08-07 Nichia Corporation Substrate for mounting light emitting element and method of fixing the substrate member

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JP2006004987A (en) * 2004-06-15 2006-01-05 Matsushita Electric Ind Co Ltd Package for optical semiconductor element and light-emitting device employing the same
JP2006093565A (en) * 2004-09-27 2006-04-06 Kyocera Corp Wiring board for light emitting element, light emitting device and method for manufacturing it

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US8592855B2 (en) 2008-05-23 2013-11-26 Lg Innotek Co., Ltd. Light emitting device package including a substrate having at least two recessed surfaces
US8878229B2 (en) 2008-05-23 2014-11-04 Lg Innotek Co., Ltd. Light emitting device package including a substrate having at least two recessed surfaces
US9190450B2 (en) 2008-05-23 2015-11-17 Lg Innotek Co., Ltd. Light emitting device package including a substrate having at least two recessed surfaces
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US10041659B2 (en) 2013-08-30 2018-08-07 Nichia Corporation Substrate for mounting light emitting element and method of fixing the substrate member

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