JP2008026027A - Probe card and manufacturing method of the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a probe card for narrowing a pitch of probe pins and facilitating a high-density arrangement. <P>SOLUTION: A laminated element 100 is formed, and includes two or more probe layers L2 and a probe isolation layer L3 interposed between the probe layers L2. A base stripe plane 103 of the laminated element 100 is fixed to a probe substrate 110. The probe layer L2 exposed from the base stripe plane 103 is electrically connected to an electrode pad 16 on the probe substrate 110. The probe isolation layer L3 is removed by immersing the probe substrate 110 into an etching liquid. A plurality of the probe pins can be simultaneously attached to the probe substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a probe card and a manufacturing method thereof, and more specifically, a plurality of probe pins are formed on a substrate, and these probe pins are brought into contact with target electrodes, respectively, and these target electrodes are electrically connected to an external device. It is related with the improvement of the probe card | curd made to conduct electrically.

  In general, a probe device is used for electrical characteristic inspection performed in a manufacturing process of a semiconductor wafer. The probe device is a device in which a semiconductor wafer is brought close to a probe card and a large number of probe pins formed on the probe card are brought into contact with electrode pads on the semiconductor wafer. By using such a probe device, a minute electrode pad formed on a semiconductor wafer can be electrically connected to an external device such as a tester via a conductive probe.

  Here, it is well known that semiconductor devices have been rapidly integrated due to a significant improvement in microfabrication accuracy due to advances in photolithography technology. During this time, the number of electrode pads with respect to the wafer area has increased dramatically, and in recent semiconductor devices, more than a thousand electrode pads have been arranged on a semiconductor wafer of several millimeters square at a narrow pitch.

  In the probe card, probe pins must be arranged at the same pitch as the electrode pads of the target semiconductor device. For this reason, various techniques using photolithography similar to semiconductor devices have been proposed as methods for manufacturing probe pins (for example, Patent Document 1).

Patent Document 1 discloses a probe pin made of a laminate. The probe pins are stacked using a photolithography technique with the direction perpendicular to the probe substrate as the stacking direction. Since the probe card for semiconductor wafers is required to improve the accuracy in accordance with the progress of the processing technology of the semiconductor device, it is desired to use the photolithography technology used for manufacturing the semiconductor device as the probe pin manufacturing technology. Machining accuracy can be obtained.
JP 2001-91539 A

  However, the conventional probe pin described above is manufactured by sequentially stacking a plurality of layers in a direction perpendicular to the probe substrate. Therefore, there is a problem that it is not easy to manufacture the probe pin as a structure having desired elastic characteristics.

  In general, in a probe card, a main surface of a probe board is brought close to a target, and each probe pin arranged on the main surface is brought into contact with a target electrode to electrically connect both. At that time, when the probe pin abuts on the target electrode while being elastically deformed, a predetermined pressing force is applied between the electrode pad and the probe pin, and the two can be reliably conducted. Therefore, each probe pin is manufactured as a structure having a certain height in the contact direction with the target electrode, that is, in the Z direction perpendicular to the probe substrate.

  However, in the conventional manufacturing method in which a plurality of layers are sequentially stacked in the Z direction, the exposure direction in the photolithography process is the Z direction, and high-precision fine processing can be freely performed in the XY plane. However, if processing with a high degree of freedom is to be performed in a plane parallel to the Y axis, one probe pin must be formed with a large number of layers, and each layer must be photolithography processed with a different photomask. However, the cost of both the photomask procurement and the complexity of the manufacturing process is high, and its practical application is not easy.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide a probe card in which the pitch of probe pins can be easily reduced. It is another object of the present invention to provide a probe card having good probe pin elastic characteristics. It is another object of the present invention to provide a probe card that facilitates high-density arrangement of probe pins. Furthermore, it aims at providing the probe card which can suppress the noise between probe pins.

  A probe card manufacturing method according to the first aspect of the present invention includes a stacking step of forming a stacked body including two or more probe layers and interposing a probe isolation layer between the probe layers, and a stripe surface of the stacked body on the probe substrate. And a step of fixing the probe layer exposed from the stripe surface to the electrode pad on the probe substrate, and a step of removing the probe isolation layer.

  By fixing the stripe surface of the laminate including two or more probe layers with the probe isolation layer interposed between them, each probe layer can be electrically connected to the electrode pad on the substrate. If the probe isolation layer is removed in this state, two or more probe pins can be simultaneously attached to the probe substrate.

  In addition, by making the stripe surface of the stacked body face the probe substrate, the stacked main surface of the stacked body can be crossed with the probe substrate. Accordingly, the degree of freedom in selecting the shape of the probe pins in the plane intersecting the probe substrate is increased, and it becomes possible to manufacture a probe card with good elastic characteristics without significantly increasing the manufacturing cost. In general, the shape of the probe pin in the plane orthogonal to the probe substrate is extremely important for the elastic deformation of the probe pin at the time of contact with the target electrode, and according to the manufacturing method of the present invention, this flexibility in shape selection Therefore, it is possible to easily manufacture a probe card with good elastic characteristics.

  Further, by making the stacking direction of the stacked body coincide with the arrangement direction of the probe pins, the pitch of the probe pins can be easily reduced. That is, since each probe pin is attached to the probe substrate as a laminated body, the difficult work of arranging the probe pins at a narrow pitch is unnecessary, and up to the control limit of the thickness of the probe layer and the probe isolation layer, The pitch of the probe pins can be reduced.

  In the probe card manufacturing method according to the second aspect of the present invention, in addition to the above configuration, the stacking step includes a probe layer forming step in which the probe layer is formed by stacking the first conductive material by plating, and plating. A probe isolation layer forming step of forming a probe isolation layer by laminating a second conductive material by processing, wherein the removing step removes the second conductive material leaving the first conductive material Configured to do.

  In the probe card manufacturing method according to the third aspect of the present invention, in addition to the above configuration, the removing step does not dissolve the probe layer and infiltrates the substrate with an etching solution that dissolves the probe isolation layer. Done.

  In the probe card manufacturing method according to the fourth aspect of the present invention, in addition to the above configuration, the stacking step forms two or more independent probe regions with an isolation region interposed in one probe layer, An anchoring step is configured to cause each probe region formed in the same probe layer to conduct to a different electrode pad, and the removal step is configured to remove the isolation region along with the probe isolation layer. With such a configuration, two probe pins can be formed in one probe layer, so that the probe pins can be arranged at a higher density on the probe substrate.

  In the probe card manufacturing method according to the fifth aspect of the present invention, in addition to the above configuration, each of the probe layers includes a probe region and a peripheral region removed by the removal step, and constitutes the laminate 2 The probe regions in the two probe layers are configured to be different from each other. With such a configuration, it is possible not only to arrange the probe pins on a straight line but also to arrange the probe pins at arbitrary positions in the direction crossing the alignment direction.

  In the probe card manufacturing method according to the sixth aspect of the present invention, in addition to the above configuration, the stacking step stacks an electrode layer and a shield layer with a shield isolation layer interposed as the probe layer, and the fixing step includes: The electrode layer and the shield layer exposed from the stripe surface are respectively conducted to electrode pads on the substrate, and the removing step removes the shield isolation layer together with the probe isolation layer. With such a configuration, it is possible to suppress the mixing of noise due to electromagnetic coupling between probe pins by interposing a shield between adjacent probe pins.

  A probe card according to a seventh aspect of the present invention is a probe card in which a large number of probe pins to be brought into contact with a target electrode are arranged on a probe substrate, wherein the probe pins have two or more probe layers with a probe isolation layer interposed therebetween. After the stripe surface of the laminate having the structure is fixed on the probe substrate, the probe isolation layer is removed, thereby forming the probe layer left on the probe substrate.

  According to the probe card and the manufacturing method thereof of the present invention, it is possible to provide a probe card in which the probe pins can be easily narrowed. In addition, it is possible to provide a probe card with good probe pin elastic characteristics. Further, it is possible to provide a probe card in which probe pins can be easily arranged at high density. Furthermore, the probe card which can suppress the noise between probe pins can be provided.

Embodiment 1 FIG.
In general, a probe card is configured by attaching hundreds to thousands of probe pins on a probe substrate. In the probe card manufacturing method according to the present invention, first, a laminated block including two or more probe pins is manufactured, and this laminated block is accurately positioned and attached on the probe substrate. After one or more laminated blocks are attached on the probe board in this way, if unnecessary materials in the laminated block are removed, a probe card in which a large number of probe pins are appropriately arranged on the probe board can be obtained. can get.

  FIG. 1 is an explanatory diagram of a method for manufacturing a probe card according to Embodiment 1 of the present invention, and an example of a laminated block 100 is shown. (A) in a figure is a perspective view, (b) is the figure seen from the direction of arrow A (A arrow line view). The laminated block 100 includes a plurality of layers that are sequentially laminated on the laminated substrate L1 by using a photolithography technique and a plating technique. Here, the laminated substrate L1, a plurality of probe layers L2 each including the probe pins 10, and a probe isolation layer L3 interposed between adjacent probe layers L2 are configured. Details of the manufacturing process of the laminated block 100 will be described later (see FIG. 3).

  The main surface of the probe layer L2 is partitioned into a probe region L2a and a peripheral region L2b. The probe region L2a is a region that eventually becomes the probe pin 10. On the other hand, the peripheral region L2b is the other region, that is, the region corresponding to the outside of the probe and the hollow portion, and defines the shape of the probe pin 10. In the laminated block 100 according to the present embodiment, the probe region L2a having the same shape is formed at the same position in each probe layer L2, and all the probes are assumed if the laminated block is seen through from the direction of arrow A. Assume that the pins 10 appear to overlap.

  The probe pin 10 includes a base contact portion 11, a beam portion 12, an extension portion 13, and a target contact portion 14. The base contact portion 11 is a terminal portion of the probe pin 10 to be joined to the electrode pad on the probe substrate. Here, one probe pin 10 has two base contact portions 11. The beam portion 12 is an arm portion extending along the probe substrate, and is provided with a base contact portion 11 on one end side and an extension portion 13 on the other end side. The extension portion 13 is an arm portion extending toward the target electrode perpendicular to the probe substrate. The target contact portion 14 is the tip of the extension portion 13 that comes into contact with the target electrode.

  The laminated block 100 includes two laminated principal surfaces 101 which are planes orthogonal to the lamination direction, and a plurality of stripe surfaces 102 which are side surfaces intersecting with the laminated principal surface 101 and each layer is exposed in a stripe shape. And have. Of these stripe surfaces 102, the surface where the base contact portion 11 of each probe pin 10 is exposed is particularly referred to as a base stripe surface 103. The base stripe surface 103 is a surface attached to the probe substrate, and is formed to be a flat surface. In FIG. 1, the stacking direction is the Y-axis direction, and the stacking block 100 includes two stacking main surfaces 101 made of the XZ plane and four stripe surfaces 102 (including the base stripe surface 103) parallel to the Y-axis. However, the laminated block 100 is not necessarily required to be a rectangular parallelepiped.

  FIG. 2 is an explanatory view showing a method for producing a probe card using the laminated block 100 of FIG. (A) in the drawing shows the laminated block 100 and the probe substrate 110 before the laminated block 100 is attached. The probe substrate 110 is an insulating substrate having a smooth main surface polished in advance, and a large number of electrode pads 16 and wiring patterns 17 are formed on the main surface. When the probe pins 10 are bonded to the electrode pads 16, the probe pins 10 and external devices can be electrically connected via the wiring pattern 17. In consideration of the coefficient of thermal expansion, it is desirable that the material of the probe substrate 110 matches the material of the substrate on which the target electrode is formed. For example, in the case of a probe card for a semiconductor wafer, the probe substrate 110 It is desirable to use silicon as the material.

  (B) in the figure shows a state in which the laminated block 100 is attached to the probe substrate 110. The laminated block 100 is attached with the base stripe surface 103 facing the probe substrate 110 arranged on the XY plane. Therefore, the base contact portion 11 of each probe pin 10 exposed from the base stripe surface 103 can be electrically connected to the electrode pad 16 on the probe substrate 110.

  The pitch of each probe pin 10 in the laminated block 100 is matched with the pitch of the electrode pads 16 on the probe substrate 110 by controlling the thicknesses of the probe layer L2 and the probe isolation layer L3. Here, it is assumed that the probe pins 10 having a length in the X direction of about 500 μm are formed at a pitch of 50 μm or less. For example, the thickness of the probe pins 10 is controlled to be 10 μm, and the interval between the probe pins 10 is controlled to 10 μm.

  If such a laminated block 100 is accurately positioned and arranged with respect to the probe substrate 110, each probe pin 10 in the laminated block 100 is also accurately arranged so as to be electrically connected to the corresponding electrode pad 16. In this state, the base contact portion 11 of each probe pin 10 is joined to the corresponding electrode pad 16. A well-known joining method can be used for joining the base contact portion 11 and the electrode pad 16. For example, bonding using a conductive adhesive, room temperature solid bonding, or the like can be used.

  (C) in the figure is a diagram showing a state after unnecessary materials in the laminated block 100 are removed. The probe substrate 110 to which the laminated block 100 is bonded is immersed in an etching solution, and the constituent material of the laminated block 100 except the probe pins 10 is dissolved and removed. That is, the multilayer substrate L1, the probe isolation layer L3, and the peripheral region L2b in the probe layer L2 are removed. As a result of etching the unnecessary material in this manner, only the probe pins 10 remain on the probe substrate 110. The probe substrate 110, the electrode pad 16 and the wiring pattern 17 on the probe substrate 110 are made of a material that does not dissolve in the etching solution, or a protective film that does not dissolve in the etching solution is formed in advance. Resistant to etchant.

  2 shows an example in which only one laminated block 100 is arranged on the probe substrate 110 for convenience, but the present invention is not limited to such a case. That is, two or more stacked blocks 100 can be attached on the same probe substrate 110. In this case, the unnecessary material is removed after all the laminated blocks 100 are attached on the probe substrate 110.

  3A to 3G are diagrams illustrating an example of a manufacturing process of the laminated block 100. FIG. (A) in the drawing shows a state in which a photoresist film 21 is formed in the peripheral region L2b on the laminated substrate 20. FIG. The laminated substrate 20 is made of a conductive material such as copper (Cu) and has a smooth main surface. A photoresist film 21 is formed on the entire surface of the laminated substrate 20, and the photoresist film 21 in the probe region L2a is selectively removed through an exposure and development process. As a result, the laminated substrate 20 in which the photoresist film 21 is formed in the peripheral region L2b is obtained.

  (B) in the drawing shows a state in which the probe pins 10 are formed in the probe region L2a on the laminated substrate 20. FIG. When a conductive material such as nickel cobalt alloy (Ni-Co) is laminated on the laminated substrate 20 on which the photoresist film 21 is selectively formed and the photoresist film 21 is removed, the probe region L2a is selectively conductive. The laminated substrate 20 on which the conductive material is laminated, that is, the laminated substrate 20 on which the probe pins 10 are formed is obtained. This lamination process is realized as an electrochemical process, that is, a so-called plating process, in which a voltage is applied to the multilayer substrate 20 immersed in a solution containing nickel and cobalt to deposit a nickel cobalt alloy on the surface of the multilayer substrate 20. At this time, if the photoresist film 21 is not conductive, the conductive material is not laminated in the peripheral region L2b where the photoresist film 21 is formed. On the other hand, in order to laminate a conductive material in the probe region L2a, the laminated substrate 20 must also be made of a conductive material.

  (C) and (d) in the figure show a state in which a conductive material is laminated in the peripheral region L2b. By laminating a conductive material such as copper (Cu) on the laminated substrate 20 on which the probe pins 10 are formed ((c) in the figure), and further polishing the surface, the probe region L2a and the peripheral region L2b are formed. A probe layer L2 in which different conductive materials are laminated is completed ((d) in the figure). The lamination process of the peripheral region L2b is realized as a plating process in which a voltage is applied to the laminated substrate 20 immersed in a solution containing copper to deposit copper on the surface of the laminated substrate 20. Since the probe pin 10 has conductivity, copper is deposited in the probe region L2a and the peripheral region L2b by the plating process. For this reason, the polishing process is performed until at least the probe pin 10 is exposed. The thickness of the probe layer L2, that is, the width of the probe pin 10 can be controlled by the time for plating the nickel cobalt alloy, the solution concentration, the applied voltage, and the like, and can also be controlled by this polishing process.

  (E) in the drawing shows a state in which the probe isolation layer L3 is formed on the probe layer L2. The probe isolation layer L3 is formed by laminating a conductive material such as copper (Cu) on the probe layer L2. The probe isolation layer L3 is also formed by the same plating process as described above. Since the entire surface of the probe layer L2 has conductivity, the probe isolation layer L3 is uniformly formed on the entire surface of the probe layer L2, and then polishing is performed. The thickness of the probe isolation layer L3, that is, the interval between the probe pins 10 can be controlled by the time of copper plating, the solution concentration, the applied voltage, and the like, and can also be controlled by this polishing process.

  (F) and (g) in the figure show how the probe layer L2 is further formed on the probe isolation layer L3. The process of sequentially forming the probe region L2a and the peripheral region L2b on the probe isolation layer L3 is exactly the same as the process of forming on the laminated substrate 20. In this way, the laminated block 100 as shown in FIG. 1 is obtained by alternately laminating the probe layers L2 and the probe isolation layers L3 on the laminated substrate 20.

  Here, on the assumption that the etching solution for processing the laminated block 100 attached to the probe substrate 110 is a selective etching solution that dissolves copper without dissolving nickel-based metal, a nickel cobalt alloy is applied to the probe pin 10. The example which uses copper for the other part in the lamination | stacking block 100 was used. However, the present invention is not limited to such a case. That is, various conductive materials that are not dissolved by the etching solution can be used for the probe pin 10. For the laminated substrate L1, the probe isolation layer L3, and the peripheral region L2b, various conductive materials that are dissolved by the etching solution can be used. For example, some known copper (Cu) etching solutions do not dissolve Ni-based metals, gold (Au), and tin (Sn) -based metals, and these metals are used as the material for the probe pins 10. You can also.

  In the conventional probe card, when stacking the probe pins, the stacking direction is the Z direction perpendicular to the probe substrate. For this reason, in order to realize a desired elastic characteristic, if a complicated shape is to be realized in a plane parallel to the Z direction, a large number of photomasks are required and a large number of photolithography processes are required. There was a problem. On the other hand, in the probe card according to the present embodiment, the Y direction parallel to the probe substrate 110 is set as the stacking direction, and photolithography processing with a high degree of freedom is performed on the XZ plane perpendicular to the probe substrate 110. For this reason, since the shape of the probe pin 10 can be freely designed in a plane parallel to the Z direction (ZX plane) without significantly increasing the number of photomasks, the probe having good elastic characteristics. The pin 10 can be manufactured at low cost.

  FIG. 4 is a diagram illustrating another example of the probe layer L2 illustrated in FIG. In the probe pin 10, a plurality of slits 15 extending in the X direction are formed in a beam portion 12 extending in the X direction. The slit 15 is a part of the peripheral region L <b> 2 b and is removed by an etching process after being attached to the probe substrate 110 and becomes a through hole of the beam portion 12. Each slit 15 is wide near the center and narrows toward the end. By adjusting the shape, number, and position of the slit 15 such as length and width, a probe pin that can obtain a desired elastic deformation when the target contact portion 14 is brought into contact with the target electrode can be manufactured. It becomes possible.

  FIG. 5 is a diagram showing an example of the entire probe card 1 manufactured according to this embodiment and an example of its use. The probe card 1 includes a main board 120 fixed to the probe device 300, a probe board 110 supported by the main board 120, and a large number formed on the main surface of the probe board 110 on the opposite side of the main board 120. Of the probe pin 10. The probe substrate 110 is supported by the main substrate 120 so as to be movable within a predetermined range. For example, it is elastically connected to the main board 120 or is suspended from the main board 120.

  The probe apparatus 300 includes a stage 301 and a stage driving unit 302 that drives the stage 301 up and down. The stage 301 is disposed so as to face the probe pins 10, and the stage drive unit 302 raises the stage 301 on which the target 200 such as a semiconductor wafer is placed, so that the probe pins are attached to the target electrode 201 formed on the target. 10 is brought into contact.

  In general, when the probe pins 10 are brought into contact with the target electrode 201, a well-known technique called overdrive is used to satisfactorily connect all the probe pins 10 to the target electrode 201. That is, the stage 301 is lifted, and the stage 301 is further lifted from the state where most of the probe pins 10 on the probe substrate 110 are in contact with the target electrode 201, so that the target electrode 201 can be brought closer to the probe pin 10. . By performing overdrive, each probe pin 10 is elastically deformed and is in contact with the target electrode 201 while applying a predetermined load.

Embodiment 2. FIG.
In the present embodiment, a method for manufacturing a probe card that is simplified compared to the first embodiment by simultaneously forming the peripheral region L2b of the probe layer L2 and the probe isolation layer L3 will be described.

  6 (a) to 6 (f) are explanatory views showing the main part of the probe card manufacturing method according to the second embodiment of the present invention, and an example of the manufacturing process of the laminated block 100 is shown. (A) and (b) in the drawing show the step of forming the probe pin 10 in the probe region L2a on the laminated substrate 20, which is the same as the case of (a) and (b) in FIG. .

  (C) and (d) in the figure show how the peripheral region L2b and the probe isolation layer L3 are formed simultaneously. A peripheral region made of the conductive material 23 is formed by laminating a conductive material such as copper (Cu) on the multilayer substrate 20 on which the probe pins 10 are formed ((c) in the figure) and further polishing the surface. L2b and the probe isolation layer L3 are formed simultaneously ((d) in the figure). That is, the peripheral region L2b in the probe layer L2 is formed as a part of the probe isolation layer L3.

  (E) and (f) in the figure show how the probe layer L2 is further formed on the probe isolation layer L3. The manufacturing steps (a) to (d) above are repeated on the probe isolation layer L3, and the probe layers L2 and the probe isolation layers L3 are alternately stacked on the multilayer substrate 20.

  If this manufacturing process is compared with the case of FIG. 3 (Embodiment 1), the conductive material laminated in FIGS. 3C and 3D is formed thicker so that the probe pin 10 is not exposed. By polishing, the step (e) in FIG. 3 is omitted. For this reason, according to the present embodiment, the manufacturing process can be simplified as compared with the first embodiment.

Embodiment 3 FIG.
In the first embodiment, the case where the probe regions L2a having the same shape are formed at the same position in each probe layer L2 has been described. In contrast, in the present embodiment, a case where the probe region L2a differs depending on the probe layer L2 will be described.

  FIG. 7 is an explanatory view showing the main part of the probe card manufacturing method according to the third embodiment of the present invention, and an example of the laminated block 100 is shown. In the figure, (a) is a perspective view of the laminated block 100, (b) is a plan view of an odd-numbered probe layer L2- (2n + 1), and (c) is a plan view of an even-numbered probe layer L2- (2n). (In each case, n is an integer).

  The shape of the probe pin 10 formed in each probe layer L2 is the same, but the position where the probe pin 10 is formed, that is, the probe region L2a, is an odd-numbered probe layer L2- (2n + 1) and an even-numbered probe layer L2. -(2n) is different. Here, the position in the X direction is shifted by the distance d.

  Since the probe pin 10 has the same characteristics as long as the material, shape, and manufacturing method are the same, the probe pin 10 formed in each probe layer L2 has the same elastic characteristics and electrical characteristics. Yes. However, since the positions in the X direction are alternately shifted, the positions of the base contact portions 11 of the adjacent probe pins 10 can be moved away from each other, and the positions of the target contact portions 14 can be moved away from each other.

  By shifting the adjacent base contact portions 11 in the X direction and increasing the distance between the base contact portions 11, the electrode pads 16 disposed adjacent to each other on the probe substrate 110 are less likely to be short-circuited, and the wiring pattern 17. Is easily routed on the probe substrate 110. Similarly, by shifting the adjacent target contact portions 14 in the X direction and increasing the distance between the target contact portions 14, the target electrodes 201 arranged adjacent to each other on the target 200 are less likely to be short-circuited.

  In FIG. 7, the case where there are two types of positions in the X direction of the probe pin 10 has been described, but it goes without saying that the position of the probe pin may be shifted so that there are three or more types of positions in the X direction. .

  FIG. 8 is an explanatory view showing the main part of the probe card manufacturing method according to the third embodiment of the present invention, and shows another example of the laminated block 100. In the figure, (a) is a perspective view of the laminated block 100, (b) is a plan view of an odd-numbered probe layer L2- (2n + 1), and (c) is a plan view of an even-numbered probe layer L2- (2n). (In each case, n is an integer).

  In the probe pin 10 formed in each probe layer L2, the position of the target contact portion 14 is the same, but the length of the beam portion 12 and the position of the base contact portion 11 are odd-numbered probe layers L2- (2n + 1). ) And even-numbered probe layers L2- (2n). Here, the lengths of the beam portions are different by a length d, and the position of the base contact portion 11 is also shifted by a distance d in the X direction.

  With this configuration, as in the case of FIG. 7, the distance between the base contact portions 11 is increased, and the electrode pads 16 disposed adjacently on the probe substrate 110 are less likely to be short-circuited. The routing on the probe substrate 110 is facilitated.

  The odd-numbered and even-numbered probe layers L2 have different lengths of the beam portions 12, and these probe pins 10 have different elastic characteristics. However, for example, the elastic characteristics of the odd-numbered and even-numbered probe pins 10 can be matched by changing the thickness of the beam portion 12 or changing the number and width of the slits 15. That is, for the probe pin 10 having a short beam portion 12, if the beam portion 12 is made narrower, the number of slits 15 is increased, or the width of the slit 15 is increased, the probe pin 10 having a longer beam portion 12 is formed. Near elastic properties can be realized.

  In addition, although FIG. 8 demonstrated the case where the length of the beam part 12 of the probe pin 10 was two types, the length of the beam part 12 was made into three or more types, and the position of the X direction of the base contact part 11 was three or more. It goes without saying that it may be made to be. Alternatively, the probe region L2a may be formed so that the position of the base contact portion 11 is the same and the position of the target contact portion 14 is different in the X direction.

Embodiment 4 FIG.
In the first to third embodiments, the example in which one probe pin 10 is formed in one probe layer L2 has been described. In contrast, in the present embodiment, a case where two or more probe pins 10a and 10b are formed in one probe layer L2 will be described.

  FIG. 9 is an explanatory view showing the main part of the probe card manufacturing method according to the fourth embodiment of the present invention, and shows an example of the laminated block 100. In this laminated block 100, two probe regions L2a that are independent from each other are formed in one probe layer L2. After the peripheral region L2b is removed by an etching process, two probe pins 10a and 10b are obtained.

  The two probe pins 10a and 10b are formed by shifting the respective base contact portions 11 in the X direction, the respective target contact portions 14 in the X direction, and the respective beam portions 12 in the Z direction. The probe pins 10a and 10b are completely separated via the isolation region L2c and do not contact each other. Here, the isolation region L2c is a part of the peripheral region L2b, and is not different from other peripheral regions L2b except that the isolation region L2c is disposed between two independent probe regions L2a in the probe layer L2.

  According to the present embodiment, two probe pins 10a and 10b can be formed by using one probe layer L2, and the manufacturing process can be simplified. Further, by arranging the two probe pins 10a and 10b in a three-dimensional manner, the probe pins 10 can be arranged on the probe substrate 110 with high density.

Embodiment 5. FIG.
In Embodiments 1-4, the example in case the probe pin 10 is comprised with a single material was demonstrated. In contrast, in the present embodiment, the case where the probe pin 10 has a multilayer structure made of different materials will be described.

  FIG. 10 is a diagram showing a configuration example of the probe pin 10 created by the probe card manufacturing method according to the fifth embodiment of the present invention, and (a) to (c) in FIG. It is the figure seen from the Z direction and the X direction. In the probe pin 10, the target contact portion 14 has a three-layer structure, while the portion other than the target contact portion 14, at least the beam portion 12, is made of a single material.

  The target contact portion 14 is composed of three conductive layers L21 to L23. A contact chip 14c with the central conductive layer L22 contacting the target electrode, and conductive layers L21 and L23 on both sides are contact chips 14c. It functions as a contact chip holding portion 14h that holds and holds. In addition to the target contact portion 14, the conductive layers L21 and L23 are used. That is, the contact chip holding part 14h is formed by branching the probe layer L2 in the thickness direction at the target contact part 14, and sandwiches the flat contact chip 14c. Further, the tip of the contact chip holding portion 14h is formed so as to recede from the tip of the contact tip 14c, and only the contact tip 14c contacts the target electrode.

  The contact tip 14c is made of a conductive material having higher hardness than the other portions of the probe pin 10 in order to ensure wear resistance. For example, rhodium Rh is used. On the other hand, the portion other than the contact tip 14c is made of a conductive material having a larger elasticity than the contact tip 14c so that it is easily elastically deformed by the pressing force from the target electrode. For example, a nickel cobalt (Ni—Co) alloy is used. In general, since a material having high wear resistance has a small elastic coefficient, it is possible to ensure the wear resistance of the target contact portion 14 and push it from the target electrode by differentiating the material of the contact tip 14c and other components. It is possible to achieve both adequate elasticity that is bent by pressure. Note that any of these conductive materials is selected from materials that are not removed by the etching process.

  FIGS. 11A to 11F are explanatory views showing a main part of the method for manufacturing a probe card according to the fifth embodiment of the present invention, and an example of the manufacturing process of the laminated block 100 is shown. (A) and (b) in the figure show a process of forming the conductive layer L21 and its peripheral region L2b on the laminated substrate 20, and are the same processes as (a) to (d) of FIG. is there.

  (C) in the drawing shows a state in which the conductive layer L22 is formed on the substrate (b). The conductive layer L22 is formed by laminating a conductive material in a state where a photoresist film is formed on the entire surface of the multilayer substrate 20, and the photoresist film in the formation region of the contact chip 14c is selectively removed through exposure and development processing. It is formed. This lamination process is realized by a plating process. Thereafter, if the photoresist film is removed, the state shown in FIG.

  (D) in the figure shows a state in which a conductive layer L23 is further formed. The conductive layer L23 is also formed in the same manner as the conductive layer L22.

  (E) and (f) in the figure show how the peripheral region L2b of the conductive layers L22 and L23 and the probe isolation layer L3 are simultaneously formed. By laminating a conductive material such as copper (Cu) on the laminated substrate 20 on which the conductive layers L21 to L23 are formed ((d) in the drawing), and further polishing the surface, the conductive layers L22 and L23 The peripheral region L2b and the probe isolation layer L3 are formed simultaneously ((f) in the figure). That is, the peripheral region L2b in the probe layer L2 is formed as a part of the probe isolation layer L3.

  Similar probe pins 10 are further repeatedly formed on the probe isolation layer L3, and a laminated block 100 including a plurality of probe pins 10 is obtained as in the above-described embodiments.

Embodiment 6 FIG.
In the present embodiment, a method for manufacturing a probe card will be described in which a shield is provided between adjacent probe pins 10 and the influence of noise between the probe pins 10 can be suppressed.

  FIG. 12 is a diagram showing a configuration example of the probe pin 10 created by the probe pin manufacturing method according to the sixth embodiment of the present invention, and (a) to (c) in the figure are each in the Y direction. It is the figure seen from the Z direction and the X direction. The probe pin 10 includes a probe body 10s and a shield 10u arranged in parallel with a shield spacer 10t made of an insulating material partially interposed therebetween.

  The probe body 10s corresponds to the probe pin 10 of the first embodiment. The shield 10u is disposed in parallel with the probe main body 10s via a gap, and is disposed between adjacent probe main bodies 10s on the probe substrate 110. For this reason, it functions as a shield means for suppressing electromagnetic coupling such as electrostatic coupling between the probe bodies 10s. The shield spacer 10t is a spacer that holds the probe main body 10s and the shield 10u at a constant interval, and is formed as a very small region on the XZ plane as compared with the probe main body 10s and the shield 10u, and the probe main body 10s and the shield 10u. Are combined.

  The shield 10u has substantially the same shape as the probe main body 10s, but the target contact portion 14 has a shape retreated from the target electrode as compared with the probe main body 10s so as not to contact the target electrode. . Further, the shield 10u has a base contact portion 11 similar to the probe main body 10s.

  When the probe pin 10 is mounted on the probe substrate 110, the probe main body 10s and the base contact portion 11 of the shield 10u are connected so as to be electrically connected to different electrode pads. That is, the probe body 10s is connected to an electrode pad as a signal terminal connected to an external device, while the shield 10u is connected to an electrode pad that supplies a stable potential such as a power supply line.

  FIGS. 13A and 13H are explanatory views showing the main part of the probe card manufacturing method according to the sixth embodiment of the present invention, and an example of the manufacturing process of the laminated block 100 is shown. Yes. (A) in the drawing shows a state in which a probe main body 10s is formed by laminating a conductive material such as nickel cobalt on the probe main body region L2s by plating, and is similar to (b) in FIG. It is this process.

  (B) and (c) in the figure show how the shield spacer 10t is formed. The multilayer substrate 20 of (a) is formed with the photoresist film 21 on the entire surface thereof, and then selectively removed, leaving the photoresist film 21 in the peripheral region L2b and the shield spacer region L2t ((( b)). Next, a conductive material such as copper is laminated on the probe main body 10s except for the region where the photoresist film 21 is not formed, that is, the shield spacer region L2t, by plating ((c) in the figure). Thus, the shield spacer 10t made of the photoresist film 21 is formed.

  (D) and (e) in the figure show how the shield 10u is formed. On the entire surface of the laminated substrate 20 on which the shield spacer 10t is formed, the photoresist film 21 is formed again, and the shield region L2u is selectively removed ((d) in the figure). Next, a conductive material such as nickel cobalt is laminated by plating on the shield region L2u where the photoresist film 21 is not formed, and the photoresist film 21 is removed ((e) in the figure).

  Here, since the shield spacer 10t is formed of an insulating photoresist, the shield 10u cannot be formed on the shield spacer 10t by plating. However, if the shield spacer region L2t is a region that is very small compared to the thickness of the shield 10u, the shield 10u can also be formed on the shield spacer 10t. If the shield 10u cannot be satisfactorily formed on the shield spacer 10t, the shield 10u may be formed after a conductive material is previously formed on the shield spacer 10t by sputtering or the like.

  (F) and (g) in the figure show how the probe layer L2 and the probe isolation layer L3 are formed simultaneously. By laminating a conductive material such as copper (Cu) on the laminated substrate 20 in which the probe main body 10s, the shield spacer 10t, and the shield 10u are sequentially formed ((f) in the figure), and further polishing the surface, The probe layer L2 and the probe isolation layer L3 are formed simultaneously ((g) in the figure). In the present embodiment, the probe layer L2 has a three-layer structure of an electrode layer L24, a shield isolation layer L25, and a shield layer L26. The electrode layer L24 is a layer including the probe body 10s, the shield isolation layer L25 is a layer including the shield spacer 10t, and the shield layer L26 is a layer including the shield 10u.

  On the probe isolation layer L3, probe layers L2 and probe isolation layers L3 are alternately formed, and a laminated block 100 including a plurality of probe pins 10 is obtained as in the above-described embodiments.

  In the present embodiment, the example in which the shield spacer 10t made of a photoresist is interposed between the probe main body 10s and the shield 10u has been described. However, the shield spacer 10t may be omitted. In the present embodiment, the example in which the shield 10u is arranged on one side of the probe main body 10s has been described. However, the shield 10u may be arranged on both sides of the probe main body 10s.

Embodiment 7 FIG.
In the fifth embodiment, the probe pin 10 having the three-layer structure in which the contact chip 14c is sandwiched between the contact chip holding portions 14h has been described. On the other hand, in the present embodiment, a probe pin 10 having a two-layer structure made of materials having different coefficients of thermal expansion will be described.

  FIG. 15 is a view showing a configuration example of the probe pin 10 created by the probe card manufacturing method according to the fifth embodiment of the present invention, and (a) to (c) in FIG. It is the figure seen from the Z direction and the X direction. The probe pin 10 has a two-layer structure of a first probe layer 10v and a second probe layer 10w.

  Both the first probe layer 10v and the second probe layer 10w are made of different conductive materials that are not dissolved by the etching process after being attached to the probe substrate 110. In general, a structure in which two layers made of different materials are bonded has a property that the bonding surface bends as the temperature changes due to a difference in thermal expansion coefficient between the materials. It is well known that a bimetallic structure in which metal plates are joined has such properties. Similarly to such a structure, if the probe pin 10 has a two-layer structure and the layers 10v and 10w are made of materials having different thermal expansion coefficients, the probe pin 10 is bent in the Y direction when the temperature changes. be able to.

  In a high temperature test performed by heating the target or a low temperature test performed by cooling the target, a large temperature change occurs in the probe pin 10 when the stage 301 is raised and the probe pin 10 is brought into contact with the target electrode. . At this time, the probe pin 10 bends in the Y direction, and a scrub operation in which the tip of the probe pin 10 in contact with the target electrode 201 moves while scratching the target electrode 201 occurs. By such a scrubbing operation, the oxide film and impurities formed on the target electrode 201 can be removed, and the probe pin 10 and the target electrode 201 can be electrically connected well.

  In the probe pin manufacturing method according to the present invention, the probe pins 10 are formed by stacking in the Y direction, and the probe pins 10 having such a two-layer structure can be easily manufactured. Therefore, a probe pin suitable for a high temperature test or a low temperature test can be easily manufactured.

It is explanatory drawing about the manufacturing method of the probe card by Embodiment 1 of this invention, and an example of the lamination | stacking block 100 is shown. It is explanatory drawing which showed the method of producing a probe card using the laminated block 100 of FIG. 5 is a diagram illustrating an example of a manufacturing process of the laminated block 100. FIG. It is the figure which showed the other example of the probe layer L2 shown in FIG.2 (b). It is the figure which showed an example of the whole probe card 1 manufactured by this Embodiment, and its usage example. It is explanatory drawing which showed the principal part of the manufacturing method of the probe card by Embodiment 2 of this invention, and an example of the manufacturing process of the laminated block 100 is shown. It is explanatory drawing which showed the principal part of the manufacturing method of the probe card by Embodiment 3 of this invention, and an example of the laminated block 100 is shown. It is explanatory drawing which showed the principal part of the manufacturing method of the probe card by Embodiment 3 of this invention, and the other example of the laminated block 100 is shown. It is explanatory drawing which showed the principal part of the manufacturing method of the probe card by Embodiment 4 of this invention, and an example of the laminated block 100 is shown. It is the figure which showed the example of 1 structure of the probe pin 10 produced by the manufacturing method of the probe card by Embodiment 5 of this invention. It is explanatory drawing which showed the principal part of the manufacturing method of the probe card by Embodiment 5 of this invention, and an example of the manufacturing process of the lamination | stacking block 100 is shown. It is the figure which showed one structural example of the probe pin 10 produced by the manufacturing method of the probe pin by Embodiment 6 of this invention. It is explanatory drawing which showed the principal part of the manufacturing method of the probe card by Embodiment 6 of this invention, and an example of the manufacturing process of the laminated block 100 is shown. Following FIG. 14, an example of the manufacturing process of the laminated block 100 is shown. It is the figure which showed one structural example of the probe pin 10 produced by the manufacturing method of the probe card by Embodiment 7 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Probe card 10, 10a, 10b Probe pin 10s Probe main body 10t Shield spacer 10u Shield 10v, 10w Probe layer 11 Base contact part 12 Beam part 13 Extension part 14 Target contact part 14c Contact chip 14h Contact chip holding part 15 Slit 16 Electrode pad 17 Wiring pattern 20 Laminated substrate 21 Photoresist film 23 Conductive material 100 Laminated block 101 Laminated main surface 102 Striped surface 103 Base stripe surface 110 Probe substrate 120 Main substrate L1 Laminated substrates L2, L21 to L23, Probe layers L21 to L23 Conductive layer L24 Electrode layer L25 Shield isolation layer L26 Shield layer L2a Probe region L2b Peripheral region L2c Isolation region L2s Probe body region L2t Rudosupesa region L2u shield region L3 probe isolation layer

Claims (7)

A stacking step of forming a stack including two or more probe layers and interposing a probe isolation layer between the probe layers;
An adhering step of adhering a stripe surface of the laminate to a probe substrate and electrically connecting the probe layer exposed from the stripe surface to an electrode pad on the probe substrate;
And a removing step for removing the probe isolation layer. The laminating step includes a probe layer forming step of laminating the first conductive material by plating to form the probe layer;
A probe isolation layer forming step of forming a probe isolation layer by laminating a second conductive material by a plating process;
The method of manufacturing a probe card according to claim 1, wherein the removing step leaves the first conductive material and removes the second conductive material.   2. The probe card manufacturing method according to claim 1, wherein the removing step is performed by infiltrating the probe substrate into an etching solution that does not dissolve the probe layer and dissolves the probe isolation layer. . The laminating step forms two or more independent probe regions with an isolation region interposed in one probe layer,
In the fixing step, each probe region formed in the same probe layer is electrically connected to a different electrode pad,
The method for manufacturing a probe card according to claim 1, wherein the removing step removes the isolation region together with the probe isolation layer. Each probe layer is composed of a probe region and a peripheral region removed by the removal step,
The probe card manufacturing method according to claim 1, wherein probe regions in two probe layers constituting the laminate are different from each other. The laminating step is to laminate an electrode layer and a shield layer with a shield isolation layer interposed as the probe layer,
In the fixing step, the electrode layer and the shield layer exposed from the stripe surface are electrically connected to electrode pads on the probe substrate, respectively.
The method of manufacturing a probe card according to claim 1, wherein the removing step removes the shield isolation layer together with the probe isolation layer. A probe card in which a large number of probe pins to be brought into contact with a target electrode are arranged on a probe substrate,
The probe pin is left on the probe substrate by removing the probe isolation layer after fixing the stripe surface of the laminate having two or more probe layers with the probe isolation layer interposed on the probe substrate. A probe card comprising a probe layer.

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