JP2008024586A - ドープされた2ホウ化マグネシウム粉末及びその製作方法 - Google Patents
ドープされた2ホウ化マグネシウム粉末及びその製作方法 Download PDFInfo
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- JP2008024586A JP2008024586A JP2007187712A JP2007187712A JP2008024586A JP 2008024586 A JP2008024586 A JP 2008024586A JP 2007187712 A JP2007187712 A JP 2007187712A JP 2007187712 A JP2007187712 A JP 2007187712A JP 2008024586 A JP2008024586 A JP 2008024586A
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- Prior art keywords
- magnesium diboride
- diboride powder
- polymer precursor
- particles
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 239000000843 powder Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 59
- 239000002243 precursor Substances 0.000 claims abstract description 37
- 229920000642 polymer Polymers 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 30
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 229910052729 chemical element Inorganic materials 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 59
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 28
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- -1 polyoxane Chemical compound 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 2
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 125000000746 allylic group Chemical group 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004917 carbon fiber Substances 0.000 claims description 2
- 239000011852 carbon nanoparticle Substances 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 2
- LNHZORZALMMUQW-UHFFFAOYSA-N oxane-2-carbonitrile Chemical compound N#CC1CCCCO1 LNHZORZALMMUQW-UHFFFAOYSA-N 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 229920001709 polysilazane Polymers 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 35
- 230000005291 magnetic effect Effects 0.000 description 25
- 238000002595 magnetic resonance imaging Methods 0.000 description 16
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- 238000010586 diagram Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000007689 inspection Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 239000012704 polymeric precursor Substances 0.000 description 4
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- 150000001247 metal acetylides Chemical class 0.000 description 3
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- 239000002887 superconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 150000002576 ketones Chemical class 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
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- 239000007790 solid phase Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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Abstract
【解決手段】ドープされた2ホウ化マグネシウム粉末(98)を製作する方法を提供する。本方法は、2ホウ化マグネシウム粉末を含む第1相の複数の粒子のうちの少なくとも1つの上に高分子前駆体をコートする工程を含み、該高分子前駆体は第2相を産生させる化学元素を含む。この第2相は、ホウ化物、窒化物、炭化物、酸化物、オキシホウ化物、オキシ窒化物、オキシ炭化物、あるいはこれらの組み合わせのうちの1つまたは幾つかを含む。本方法はさらに、該2ホウ化マグネシウム粉末の複数の粒子の少なくとも1つの上に第2相コーティングを形成する工程を含む。
【選択図】図4
Description
12 スキャナ
14 スキャナ制御回路
16 システム制御回路
18 患者ボア
20 テーブル
22 患者
24 主マグネットコイル
26 傾斜コイル
28 傾斜コイル
30 傾斜コイル
32 RFコイル
34 電源
36 制御回路
38 メモリ回路
40 制御回路
42 回路
44 インタフェース構成要素
46 オペレータ制御装置
48 コンピュータモニタ
50 コンピュータキーボード
52 コンピュータマウス
54 プリンタ
56 検査制御デバイス
58 2ホウ化マグネシウム粉末
60 2ホウ化マグネシウム粒子
62 炭化ケイ素コーティング
64 2ホウ化マグネシウム粉末
66 2ホウ化マグネシウム粒子
68 炭化ケイ素薄膜
70 薄膜の厚さ
72 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
74 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
76 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
78 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
80 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
82 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
84 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
86 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
88 炭素ドープされた2ホウ化マグネシウムを製作する方法の一工程
90 ワイヤの製作方法の一工程
92 ワイヤの製作方法の一工程
94 ワイヤの製作方法の一工程
98 超伝導ワイヤ
100 フィラメント
102 金属マトリックス
104 ワイヤの製作方法の一工程
106 ワイヤの製作方法の一工程
Claims (10)
- ドープされた2ホウ化マグネシウム粉末を製作する方法であって、
2ホウ化マグネシウム粉末(64)を含む第1相の複数の粒子のうちの少なくとも1つの上に高分子前駆体をコートする工程であって、該高分子前駆体は第2相を産生するように構成させた化学元素を含み、該第2相はホウ化物、窒化物、炭化物、酸化物、オキシホウ化物、オキシ窒化物、オキシ炭化物、あるいはこれらの組み合わせのうちの1つまたは幾つかを含むコート工程と、
前記2ホウ化マグネシウム粉末の複数の粒子の少なくとも1つの上に第2相コーティングを形成する工程と、
を含む方法。 - 前記コート工程は、
前記高分子前駆体の溶液を提供する工程と、
前記高分子前駆体の溶液を前記2ホウ化マグネシウム粉末と混合することによって該2ホウ化マグネシウム粉末の複数の粒子の少なくとも1つの上に高分子前駆体の溶液のコーティングを形成する工程と、
を含む、請求項1に記載の方法。 - 前記第2相コーティングの形成工程は、前記溶剤を気化させること、または高分子前駆体を固化させるために事前融解させた高分子前駆体を有する混合物を冷却すること、あるいはこれら両方によって、複数の2ホウ化マグネシウム粒子の少なくとも1つの上に第2相コーティングを形成する工程を含む、請求項2に記載の方法。
- 前記第2相コーティングの形成工程は、コートさせた2ホウ化マグネシウム粉末を所定の温度で熱処理する工程を含む、請求項1に記載の方法。
- 前記高分子前駆体は、ポリシラザン、変性シロキサン、[R3SiCH2−]x[−SiR2CH2−]y−[−SiR(CH2−)1.5]z[−Si(CH2−)2](ここでRは、H、−CH2CH=CH2、あるいは部分的アリル置換の誘導体、すなわち[′Si(allyl)0.1H0.9CH2′]n)のタイプをした多分岐のポリカルボシラン、ポリアクリルニトレート、ポリオキサン、シアノオキサン、炭酸塩、あるいはこれらの組み合わせを含む、請求項1に記載の方法。
- 2ホウ化マグネシウム粉末を有する第1相に、炭素、ホウ素、窒素、酸素、あるいはこれらの組み合わせを含むドーパントをドープする工程をさらに含む請求項1に記載の方法。
- 前記熱処理工程の前に前記2ホウ化マグネシウム粉末に対して、炭素繊維、炭素ナノ粒子、チタン、リチウム、イットリア、アルミニウム、ケイ素、ジルコニウム、あるいはこれらの組み合わせを追加する工程をさらに含む請求項1に記載の方法。
- 前記第2相コーティングの形成工程は、金属有機化学蒸着法、反応性プラズマ支援式化学蒸着法、反応性プラズマ支援式物理的蒸着法、化学気相含浸法、あるいはこれらの組み合わせを含む、請求項1に記載の方法。
- 炭素ドープされた2ホウ化マグネシウム粉末を製作する方法であって、
2ホウ化マグネシウム粉末からなる複数の粒子のうちの少なくとも1つの上に高分子前駆体をコートする工程であって、該高分子前駆体は炭化ケイ素を産生するように構成させた化学元素を含むコート工程と、
前記複数の粒子の少なくとも1つの上に炭化ケイ素コーティングを形成させるように前記コートした2ホウ化マグネシウム粉末を所定の温度で熱処理する工程と、
を含む方法。 - 炭素ドープされた2ホウ化マグネシウム粉末を製作する方法であって、
溶剤内に高分子前駆体を溶解させて溶液を形成する工程であって、該高分子前駆体は炭化ケイ素を生成するように構成させた化学元素を含む溶液形成工程と、
前記溶液に2ホウ化マグネシウム粉末を混合して混合物を形成する工程であって、該2ホウ化マグネシウム粉末は複数の粒子を含みかつ前記高分子前駆体は炭化ケイ素を含む混合物形成工程と、
前記高分子前駆体を熱分解させながら前記混合物を所定の温度で熱処理し前記溶剤を気化させて前記2ホウ化マグネシウム粉末上に炭化ケイ素コーティングを形成させる工程と、
を含む方法。
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JP2013016396A (ja) * | 2011-07-05 | 2013-01-24 | Hitachi Ltd | 超電導線材及びその製造方法 |
JP2021182528A (ja) * | 2020-05-20 | 2021-11-25 | 国立研究開発法人物質・材料研究機構 | 高温酸化物超伝導線材と金属系超伝導線材の超低抵抗接続方法及び超低抵抗接続体 |
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US20080236869A1 (en) | 2007-03-30 | 2008-10-02 | General Electric Company | Low resistivity joints for joining wires and methods for making the same |
WO2009012513A1 (en) * | 2007-07-23 | 2009-01-29 | University Of Wollongong | Improvements in magnesium diboride superconducting materials and methods of synthesis |
US8229528B2 (en) * | 2008-04-17 | 2012-07-24 | Asg Superconductors, S.P.A. | Superconducting coil having a granular superconducting junction |
US8325411B2 (en) * | 2008-11-26 | 2012-12-04 | Triton Systems, Inc. | Negative refractive index materials and methods for making same |
US8470743B2 (en) * | 2010-12-31 | 2013-06-25 | Carlton Anthony Taft | Composite superconductor |
US20140100118A1 (en) * | 2012-10-05 | 2014-04-10 | Hyper Tech Research, Inc. | Method for continuously forming superconducting wire and products therefrom |
US20160322131A1 (en) * | 2015-04-29 | 2016-11-03 | Palo Alto Research Center Incoporated | Co-extrusion printing of filaments for superconducting wire |
CN106205861B (zh) * | 2016-06-29 | 2017-05-10 | 西北有色金属研究院 | 一种石墨烯负载多元掺杂二硼化镁超导块材的制备方法 |
CN107464631A (zh) * | 2017-08-22 | 2017-12-12 | 苏州南尔材料科技有限公司 | 一种纳米碳导电纤维包覆铌铝超导线材的制备方法 |
CN107937873B (zh) * | 2017-12-22 | 2023-11-14 | 深圳先进技术研究院 | 碳掺杂的过渡金属硼化物涂层、碳-过渡金属硼化物复合涂层、制备方法及应用和切削工具 |
CN114570423B (zh) * | 2021-12-27 | 2023-09-15 | 中国科学院山西煤炭化学研究所 | 一种合成气制乙醇、丙醇的催化剂及其制备方法和应用 |
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US7018954B2 (en) * | 2001-03-09 | 2006-03-28 | American Superconductor Corporation | Processing of magnesium-boride superconductors |
US6630427B2 (en) * | 2001-06-01 | 2003-10-07 | Northwestern University | Superconducting Mg-MgB2 and related metal composites and methods of preparation |
US6946428B2 (en) * | 2002-05-10 | 2005-09-20 | Christopher M. Rey | Magnesium -boride superconducting wires fabricated using thin high temperature fibers |
AUPS305702A0 (en) | 2002-06-18 | 2002-07-11 | Dou, Shi Xue | Superconducting material and method of synthesis |
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