JP2008017523A - 高効率方向性結合器 - Google Patents
高効率方向性結合器 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 74
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- 238000012545 processing Methods 0.000 claims abstract description 7
- 230000005291 magnetic effect Effects 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 2
- 229910052791 calcium Inorganic materials 0.000 claims 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
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- 238000000926 separation method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- -1 Polytetrafluoroethylene Polymers 0.000 description 2
- 241001620634 Roger Species 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
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- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
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- 230000014759 maintenance of location Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
- H01P5/185—Edge coupled lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
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- Waveguides (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structure Of Printed Boards (AREA)
- Constitution Of High-Frequency Heating (AREA)
- Optical Integrated Circuits (AREA)
Abstract
【解決手段】 無線周波数信号を処理する回路である。この回路は、回路が配置される基板を有する。基板はメタマテリアルでも良くそして、少なくとも1つの誘電体層を組み込むことができる。方向性結合器と少なくとも1つのグランドが、基板に結合されうる。誘電体層は、第1の組みの基板特性を有する第1領域と第2の組みの基板特性を有する第2領域を含みうる。基板特性は誘電率と透磁率を含む。方向性結合器の実質的な部分は、第2領域と結合されうる。第2領域の誘電率及び/又は透磁率は、第1領域の誘電率及び/又は透磁率よりも高い。増加された誘電率及び/又は透磁率は、方向性結合器の大きさを減少させそして、方向性結合器に関連する種々の電気的特性の変更を行う。
【選択図】 図1
Description
に等しく、ここで、Llは単位長当りのインダクタンスであり、Clは単位長当りのキャパシタンスである。結合領域内で、偶数及び奇数モードの単位長当りのインダクタンスとキャパシタンスの2つの値がある。それらの値は、一般的には、伝送線路構造を分離するのに使用される、誘電体材料の誘電率だけでなく、線路構造の物理的な外形や間隔及び、偶数又は奇数モード電流により決定される。従来の基板材料は、典型的には、約1.0の比誘電率を有する。
(比誘電率2.2、誘電正接0.0007)のような、ポリテトラフルオロエチレン(polytetrafluoroethylene、PTFE)ベースの複合物は、両方ともに、ルーズベルト通り、チャンドラー、AZ85226の、ロジャーマイクロ波プロダクト、アドバンスド回路材料部門100S(Roger Microwave Products,Advanced Circuit Materials Division 100S)から入手できる。これらの材料の両方は、一般的な基板材料の選択である。上述の基板材料は、低誘電正接を伴なう比較的低い誘電率を有する誘電体層を提供する。
に等しい。伝搬速度は、比透磁率と比誘電率に反比例するので、透磁率及び/又は誘電率を第2の領域20で増加させることは、方向性結合器の進後の伝搬速度、従って、信号波長を減少させる。これゆに、方向性結合器の長さは、第2の領域20の透磁率及び/又は誘電率を増加することにより、減少させることが可能である。更に、誘電率の増加は、方向性結合器とグランド50の間の容量性結合を増加する。従って、方向性結合器面領域も、第2の領域20の誘電率を増加することにより、減少させることが可能である。従って、方向性結合器は、従来の回路基板で要求されるよりも、長さと幅の両方で、小さくできる。
11 誘電体層
16、19 方向性結合器部
20 第2の領域
25 領域
30 第2の伝送線路
32 第1の伝送線路
50 グランド面
Claims (4)
- 無線周波数信号を処理する回路であって、
少なくとも1つの誘電体層を有し、前記誘電体層が、異なる誘電率及び異なる透磁率の少なくとも一方を有するよう差別的に変更される第1の領域及び少なくとも第2の領域を有する基板と、
前記基板上に搭載された少なくとも1つのグランドと、
前記基板上に搭載された方向性結合器とを有し、
前記方向性結合器の少なくとも一部分は前記第1の領域上に搭載され、前記方向性結合器の少なくとも一部分は前記第2の領域上に搭載され、
フェライト含有有機化合物‐セラミック粒子、あるいは、
ニオブ含有有機化合物‐セラミック粒子、あるいは、
酸化アルミニウム、酸化カルシウム、酸化マグネシウム、酸化ニッケル、酸化ジルコニウム、及び、酸化ニオブ(II、IV、V)、ニオブ酸リチウムを含む金属酸化物と、
ジルコン酸カルシウム及びジルコン酸マグネシウムを含むジルコン酸塩と、
マグネシウム、ストロンチウム又はニオブをドーピング金属として用いた、フェライトがドープされたチタン酸カルシウムと、
フェライト又はニオブがドープされたチタン酸ジルコン酸カルシウム若しくはバリウムとを有する群から選択される有機官能化された複合セラミック粒子と
を含む少なくとも1つのメタマテリアルを選択的に用いることによって差別的変更が達成され、
前記メタマテリアルは、分子レベル又はナノメートルレベルにおいて、2つ以上の異なる材料の混合又は配置から形成される複合材料である回路。 - 前記第2の領域の誘電率は前記第1の領域の誘電率よりも大きい、請求項1に記載の回路。
- 前記電気的特性は、インピーダンス、インダクタンス、キャパシタンス、品質ファクタ(Q)及び電圧を含むグループから選択される、請求項2に記載の回路。
- 前記第2の領域の透磁率は前記第1の領域の透磁率よりも大きい、請求項1に記載の回路。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/185,480 US6731244B2 (en) | 2002-06-27 | 2002-06-27 | High efficiency directional coupler |
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JP2003179773A Division JP2004032779A (ja) | 2002-06-27 | 2003-06-24 | 高効率方向性結合器 |
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JP2008017523A true JP2008017523A (ja) | 2008-01-24 |
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JP2003179773A Pending JP2004032779A (ja) | 2002-06-27 | 2003-06-24 | 高効率方向性結合器 |
JP2007224201A Pending JP2008017523A (ja) | 2002-06-27 | 2007-08-30 | 高効率方向性結合器 |
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JP2003179773A Pending JP2004032779A (ja) | 2002-06-27 | 2003-06-24 | 高効率方向性結合器 |
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US (1) | US6731244B2 (ja) |
EP (1) | EP1376753B1 (ja) |
JP (2) | JP2004032779A (ja) |
AT (1) | ATE341107T1 (ja) |
AU (1) | AU2003204882A1 (ja) |
CA (1) | CA2432471C (ja) |
DE (1) | DE60308600T2 (ja) |
Families Citing this family (29)
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US8749054B2 (en) | 2010-06-24 | 2014-06-10 | L. Pierre de Rochemont | Semiconductor carrier with vertical power FET module |
US6859114B2 (en) * | 2002-05-31 | 2005-02-22 | George V. Eleftheriades | Metamaterials for controlling and guiding electromagnetic radiation and applications therefor |
US6995711B2 (en) * | 2003-03-31 | 2006-02-07 | Harris Corporation | High efficiency crossed slot microstrip antenna |
JP4843611B2 (ja) * | 2004-10-01 | 2011-12-21 | デ,ロシェモント,エル.,ピエール | セラミックアンテナモジュール及びその製造方法 |
JP4945561B2 (ja) | 2005-06-30 | 2012-06-06 | デ,ロシェモント,エル.,ピエール | 電気コンポーネントおよびその製造方法 |
US8350657B2 (en) * | 2005-06-30 | 2013-01-08 | Derochemont L Pierre | Power management module and method of manufacture |
US7535316B2 (en) * | 2005-11-16 | 2009-05-19 | Agilent Technologies, Inc. | Self-supported strip line coupler |
US8354294B2 (en) | 2006-01-24 | 2013-01-15 | De Rochemont L Pierre | Liquid chemical deposition apparatus and process and products therefrom |
JP4729464B2 (ja) * | 2006-09-20 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 方向性結合器および高周波回路モジュール |
WO2009153956A1 (ja) * | 2008-06-17 | 2009-12-23 | パナソニック株式会社 | バランを有する半導体装置 |
US7959598B2 (en) | 2008-08-20 | 2011-06-14 | Asante Solutions, Inc. | Infusion pump systems and methods |
US8922347B1 (en) | 2009-06-17 | 2014-12-30 | L. Pierre de Rochemont | R.F. energy collection circuit for wireless devices |
US8952858B2 (en) | 2009-06-17 | 2015-02-10 | L. Pierre de Rochemont | Frequency-selective dipole antennas |
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- 2002-06-27 US US10/185,480 patent/US6731244B2/en not_active Expired - Lifetime
-
2003
- 2003-06-12 AT AT03013316T patent/ATE341107T1/de not_active IP Right Cessation
- 2003-06-12 EP EP03013316A patent/EP1376753B1/en not_active Expired - Lifetime
- 2003-06-12 DE DE60308600T patent/DE60308600T2/de not_active Expired - Lifetime
- 2003-06-16 CA CA002432471A patent/CA2432471C/en not_active Expired - Lifetime
- 2003-06-19 AU AU2003204882A patent/AU2003204882A1/en not_active Abandoned
- 2003-06-24 JP JP2003179773A patent/JP2004032779A/ja active Pending
-
2007
- 2007-08-30 JP JP2007224201A patent/JP2008017523A/ja active Pending
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US20040000964A1 (en) | 2004-01-01 |
DE60308600D1 (de) | 2006-11-09 |
JP2004032779A (ja) | 2004-01-29 |
EP1376753A1 (en) | 2004-01-02 |
CA2432471C (en) | 2008-09-23 |
US6731244B2 (en) | 2004-05-04 |
ATE341107T1 (de) | 2006-10-15 |
CA2432471A1 (en) | 2003-12-27 |
EP1376753B1 (en) | 2006-09-27 |
AU2003204882A1 (en) | 2004-01-22 |
DE60308600T2 (de) | 2007-08-09 |
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