JP2008016444A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with good reproducibility and of low cost. <P>SOLUTION: This relates to a manufacturing method of a semiconductor device in which a first electrode is formed on a substrate, an insulating layer is formed on the substrate and the first electrode, apertures are formed on the insulating layer by pressing a mold on the insulating layer, barrier ribs are formed by removing the mold from the insulating layer formed with the apertures and curing the insulating layer with the apertures formed, a light-emitting layer is formed on the first electrode and the barrier ribs, and a second electrode is formed on the light-emitting layer. The insulating layer includes a thermosetting resin material and a light-hardened resin material. Furthermore, the barrier ribs have cross-section taper angle of 20°-50° and the edge of the bottom part and the apex part of the barrier ribs has a roundish shape. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  Development of a light-emitting device using a light-emitting element that has a light-emitting layer between a pair of electrodes and emits light by passing a current between the electrodes is underway. Such a light-emitting device is advantageous in reducing the thickness and weight as compared to other display devices called thin display devices, and since it is self-luminous, it has good visibility and quick response. For this reason, development has been actively promoted as a next-generation display device, and some of the devices have been put into practical use.

  As a light-emitting device as described above, light emission in which an organic substance, an inorganic substance, or a mixture containing an organic substance and an inorganic substance that emits light called electroluminescence (hereinafter also referred to as “EL”) is interposed between electrodes. There is a light-emitting display device in which an element and a thin film transistor (TFT) are connected.

Since an electroluminescent element (EL element) can emit light with high luminance, it can display a variety of exciting images. Emission obtained from the light emitting element, for example, high luminance ^{100cd / m 2 ~10000cd / m 2} . The light-emitting display device has an advantage that the display device can be thinned and light-weighted because of its quick response and self-luminous display. A light emitting element using electroluminescence that can be applied in the present invention is distinguished depending on whether the light emitting material is an organic compound or an inorganic compound. Generally, the former is an organic EL element, and the latter is an inorganic EL element. It is called an element.

A resin material is used as a material for partitioning the pixels of the EL element (hereinafter referred to as a partition) (see Patent Document 1). Such a resin material may be patterned by dry etching or wet etching, or may be patterned by imparting photosensitivity to the resin itself and performing exposure / development processing.
JP 2000-294378 A

  When the partition walls are formed by dry etching or wet etching, there is a drawback that the length of the partition wall changes for each substrate, and even for the same substrate, it changes for each element.

  Further, in the method of forming the partition wall by dry etching or wet etching, it is difficult to manufacture the partition wall by intentionally controlling the taper angle of the partition wall.

  If the taper angle of the partition wall is too large, the film formed on the partition wall becomes thin, which may cause a short circuit. In addition, when the film thickness on the partition is thin, the physical strength of the film may be reduced. Furthermore, if the taper angle of the partition wall is too large, moisture may enter from there.

  Also, if the bottom and top edges of the partition walls are not rounded, the film formed thereon will not be rounded, so that the film formed on the partition walls may be ruptured. Yes, if tearing occurs, there is a possibility that moisture may enter from there or a short circuit may occur.

  An example in which the edges of the bottom and top of the partition are not rounded is illustrated in FIG. A semiconductor device illustrated in FIG. 22B includes partition walls 1051a and 1051b each having an angular shape, and an opening 1052 therebetween. The end portions of the partition walls 1051a and 1051b each have a taper angle φ. In such a shape, there is a possibility that moisture may enter as described above or a short circuit may occur.

  The present invention uses a nanoimprint method when forming a partition wall from a resin material, has a cross-section taper angle of 20 ° to 50 °, and has a round shape at the bottom and top edges (edges), that is, A partition wall having a curved surface is manufactured with high reproducibility.

  The partition which divides the element of this invention is formed as follows, for example.

  A resin material is uniformly formed on the substrate on which the element is formed, and a mold (also referred to as a mold) is pressed (pressed) against the resin material by a thermal imprint method or an optical imprint method. Next, the mold is peeled off, and if necessary, the remaining resin material is removed with oxygen plasma or the like. Next, if necessary, the resin material molded into a predetermined shape is completely cured by heating, light irradiation, or the like. A partition is formed by the above.

  When the barrier ribs are formed using the nanoimprint method, the barrier ribs can be formed with the same accuracy as the method using the stepper device, that is, the accuracy of nanometers (nm). In the nanoimprint method, a partition is formed by using a mold, so that a plurality of partitions can be formed with good reproducibility, and there is little variation and the manufacturing cost can be reduced.

  In the present invention, a first electrode is formed on a substrate, an insulating layer containing a thermoplastic resin material or a thermosetting resin material is formed on the substrate and the first electrode, and the insulating layer is formed on the insulating layer. The mold is pressed, an opening is formed in the insulating layer on the first electrode, the mold is removed from the insulating layer in which the opening is formed, the mold is removed, and then the opening is formed. The insulating layer formed is hardened to form a partition, a light emitting layer is formed on the first electrode and the partition, and a second electrode is formed on the light emitting layer The present invention relates to a method for manufacturing a device.

  In the present invention, the insulating layer is cured by heating.

  In the present invention, a first electrode is formed on a substrate, an insulating layer containing a photocurable resin material is formed on the substrate and the first electrode, a mold is pressed against the insulating layer, An opening is formed in the insulating layer on the first electrode, the mold is removed from the insulating layer in which the opening is formed, and a partition is formed by curing the insulating layer in which the opening is formed. The present invention relates to a method for manufacturing a semiconductor device, wherein a light emitting layer is formed over the first electrode and the partition, and a second electrode is formed over the light emitting layer.

  In the present invention, the insulating layer is cured by light irradiation.

  In the present invention, the mold is formed of a metal material or an insulating material, and a mold having irregularities formed on the surface of the mold is used.

  In the present invention, the partition wall has a cross-sectional taper angle of 20 ° or more and 50 ° or less, and has a shape in which the bottom and top edges of the partition wall have curved surfaces.

  Note that in this specification, a semiconductor device refers to all elements and devices that function by using a semiconductor, and includes an electro-optical device including a light-emitting device including a semiconductor element and an electronic device including the electro-optical device. Category.

  According to the present invention, a partition wall using a resin material can be manufactured with a simple method and good reproducibility. Thus, a light-emitting display device with low variation and low cost can be manufactured.

  In addition, since the taper angle of the partition wall is not so large as 20 ° to 50 °, it is possible to prevent the film formed on the partition wall from being thinned. Therefore, it can be avoided that the physical strength of the film on the partition wall is reduced.

  In addition, since the bottom and top edges of the partition walls are rounded, that is, the bottom and top edges of the partition walls have a curved surface, the film formed on the partition walls can be prevented from being broken.

  When the taper angle of the partition is 20 ° or more and 50 ° or less, and the bottom and top edges of the partition are rounded, it is possible to prevent moisture from entering and avoid short circuit. Thus, a highly reliable light-emitting display device can be obtained.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in the drawings described below, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

  In this embodiment mode, a process for manufacturing a light-emitting element of a light-emitting display device using the present invention will be described with reference to FIGS. 1A to 1B, FIGS. 2A to 2B, and FIG. A) to FIG. 3C will be described.

  First, the first electrode 102 (102a, 102b, 102c, 102d, or the like) is formed over the substrate 101 (see FIG. 1A). As the substrate 101, for example, glass, quartz, or the like can be used. Note that a base insulating film may be formed over the substrate 101 before the first electrode 102 is formed.

  For the first electrode 102 and the second electrode 114 (114a, 114b, 114c, 114d, and the like) formed in a later step, a metal, an alloy, a conductive compound, a mixture thereof, or the like can be used. Specifically, for example, indium tin oxide (also referred to as “ITO”), indium oxide-tin oxide containing silicon or silicon oxide, indium zinc oxide (“IZO”). And tungsten oxide-indium oxide containing tungsten oxide and zinc oxide. These conductive metal oxide films are usually formed by sputtering. For example, indium oxide-zinc oxide (IZO) can be formed by sputtering using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide. Further, tungsten oxide-indium oxide containing zinc oxide can be formed by sputtering using a target containing 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide with respect to indium oxide.

  In addition to the above, as the first electrode 102 and the second electrode 114, aluminum (Al), silver (Ag), gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or a nitride of a metal material (for example, titanium nitride) can be used.

  Note that in the case where any one of the first electrode 102 and the second electrode 114 or the first electrode 102 and the second electrode 114 is a light-transmitting electrode, the material has low visible light transmittance. Even so, it can be used as a light-transmitting electrode by forming a film with a thickness of about 1 nm to 50 nm, preferably about 5 nm to 20 nm. In addition to sputtering, an electrode can also be produced using a vacuum deposition method, a CVD method, or a sol-gel method.

  However, since light emission is extracted to the outside through the first electrode 102 or the second electrode 114, at least one of the first electrode 102 and the second electrode 114 is formed using a light-transmitting material. Need to be. The material is preferably selected so that the work function of the first electrode 102 is higher than that of the second electrode 114. Further, the first electrode 102 and the second electrode 114 do not have to be one layer each, and may have a structure of two or more layers.

  Then, as illustrated in FIG. 1B, an insulating layer 104 made of a resin material is formed over the substrate 101 and the first electrode 102. As the insulating layer 104, an insulating layer containing a thermoplastic resin material or a photocurable resin material may be used.

  As such a thermoplastic resin material or a photocurable resin material, the following materials may be used. That is, acrylic, novolac resin, silicon-containing resin, diallyl phthalate resin, vinyl chloride resin, vinyl acetate resin, polyvinyl alcohol, polystyrene, methacrylic resin, polyethylene resin, polypropylene, polycarbonate, polyester, polyamide (nylon) and the like.

  Moreover, thermosetting resins such as polyimide, phenol resin, melamine resin, and epoxy resin can also be used.

  Next, a mold (also referred to as a mold) 105 is pressed against the insulating layer 104, so that openings 107 (107a, 107b, 107c, 107d, and the like) are formed in the insulating layer 104 (see FIG. 2A). For example, in the case where a thermoplastic resin material is used as the insulating layer 104, the insulating layer 104 is heated at a temperature higher than the glass transition point, the mold 105 is pressed in a soft state, the temperature is lowered, and the insulating layer 104 is again Release the mold when it is hard. In the case of using a photocurable resin material for the insulating layer 104, the insulating layer 104 is cured by light irradiation (typically ultraviolet irradiation) after the mold 105 is pressed.

  When a thermosetting resin material is used as the insulating layer 104, the mold 105 is pressed against the insulating layer 104, that is, heated to the curing temperature while being pressed, and the mold 105 is held and cured as it is.

  The mold 105 is made of a metal material or an insulating material such as quartz, and has an uneven surface formed in advance. The unevenness on the surface is formed using, for example, electron beam drawing.

  At this time, the cross-sectional taper angle of the partition wall 112 completed in a later process has a shape of 20 ° to 50 °, and the bottom and top edges (edges) of the partition wall 112 are rounded, that is, a shape having a curved surface. As a result, irregularities on the surface of the mold 105 are formed. When the partition 112 having such a taper angle and shape is formed, there is an advantage that when the light emitting layer 113 and the second electrode 114 are formed on the partition 112, the step coverage is improved and a short circuit can be prevented. .

  FIG. 22A shows a semiconductor device in which the bottom and top edges of the partition wall of the present invention are rounded. A partition wall 151 (151a and 151b) in FIG. 22A is the same as the partition wall 112 in FIG. In FIG. 22A, partition walls 151a and 151b whose bottom and top edges are rounded have an opening 152 therebetween. Moreover, the edge part of the partition 151 has taper angle (theta). In the partition wall having such a shape, the film (the light emitting layer 113 or the like) formed on the partition walls 151a and 151b and in the opening 152 can be prevented from being broken, and as a result, a short circuit can be prevented from occurring. It becomes.

  Next, as shown in FIG. 2B, the mold 105 is removed from the insulating layer 104. At this time, by applying vibration to the insulating layer 104 using ultrasonic waves, the mold 105 can be removed from the insulating layer 104 while suppressing deformation of the insulating layer 104. By removing the mold 105, the insulating layer 109 having a pattern can be formed.

  At this time, the residue of the resin material on the electrode 102 is removed by wet etching or dry etching if necessary. For example, the resin material remaining on the electrode 102 may be removed by oxygen plasma or the like.

  Next, the insulating layer 109 is heated to completely cure the insulating layer 109, so that the partition 112 is formed (see FIG. 3A). The curing method may be performed by performing heat treatment or light irradiation with a resin.

  Next, a light-emitting layer 113 (113a, 113b, 113c, 113d, and the like) is formed over the first electrode 102 and the partition 112 (see FIG. 3B). In this embodiment mode, an organic compound is used for the light-emitting layer 113.

For the organic compound light-emitting layer 113, the following materials can be used. For example, as a light-emitting material that emits red light, Alq ₃ (tris (8-quinolinolato) aluminum): DCM1 (4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran) Alternatively, a material such as Alq ₃ : rubrene: BisDCJTM is used. As a light-emitting material that emits green light, a material such as Alq ₃ : DMQD (N, N′-dimethylquinacridone) or Alq ₃ : coumarin 6 is used. As a light-emitting material that emits blue light, a material such as α-NPD or tBu-DNA is used.

  The present invention can also be applied to the case where an inorganic compound is used as the light emitting layer 113.

  Inorganic EL elements using an inorganic compound as a light emitting material are classified into a dispersion type inorganic EL element and a thin film type inorganic EL element depending on the element structure. The former has an electroluminescent layer in which particles of a luminescent material are dispersed in a binder, and the latter has an electroluminescent layer made of a thin film of luminescent material, but is accelerated by a high electric field. This is common in that it requires more electrons. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. In general, the dispersion-type inorganic EL element often has donor-acceptor recombination light emission, and the thin-film inorganic EL element often has localized light emission.

  A light-emitting material that can be used in the present invention includes a base material and an impurity element serving as a light emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method and a liquid phase method (coprecipitation method) can be used. Also, spray pyrolysis method, metathesis method, precursor thermal decomposition method, reverse micelle method, method combining these methods with high temperature firing, liquid phase method such as freeze-drying method, etc. can be used.

  The solid phase method is a method in which a base material and an impurity element or a compound containing the impurity element are weighed, mixed in a mortar, heated and fired in an electric furnace, reacted, and the base material contains the impurity element. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

  The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing the impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

As a base material used for the light-emitting material, sulfide, oxide, or nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide. Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. As the nitride, for example, aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), or the like can be used. Furthermore, zinc selenide (ZnSe), zinc telluride (ZnTe), and the like can also be used, and calcium sulfide-gallium sulfide (CaGa ₂ S ₄ ), strontium sulfide-gallium sulfide (SrGa ₂ S ₄ ), barium sulfide-gallium (BaGa). _It may be a ternary mixed crystal such as ₂ S ₄ ).

  As emission centers of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

  On the other hand, a light-emitting material containing a first impurity element that forms a donor level and a second impurity element that forms an acceptor level can be used as the emission center of donor-acceptor recombination light emission. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. For example, copper (Cu), silver (Ag), or the like can be used as the second impurity element.

In the case where a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, a second impurity element, or a second impurity element Each compound containing an impurity element is weighed and mixed in a mortar, and then heated and fired in an electric furnace. As the base material, the above-described base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) or the like, and examples of the second impurity element or the compound containing the second impurity element include copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), and silver sulfide (Ag). ₂ S) or the like can be used. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

  In addition, as an impurity element in the case of using a solid phase reaction, a compound including a first impurity element and a second impurity element may be used in combination. In this case, since the impurity element is easily diffused and the solid-phase reaction easily proceeds, a uniform light emitting material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. As the compound including the first impurity element and the second impurity element, for example, copper chloride (CuCl), silver chloride (AgCl), or the like can be used.

  Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

  In the case of a thin-film inorganic EL, the light emitting layer is a layer containing the above light emitting material, and a physical vapor deposition method (PVD) such as a resistance heating vapor deposition method, a vacuum vapor deposition method such as an electron beam vapor deposition (EB vapor deposition) method, or a sputtering method. ), Chemical vapor deposition (CVD) such as organometallic CVD, hydride transport low pressure CVD, and atomic layer epitaxy (ALE).

  Next, second electrodes 114 (114a, 114b, 114c, 114d, and the like) are formed over the light-emitting layer 113 (see FIG. 3C). The material and manufacturing process of the second electrode 114 are as described in manufacturing the first electrode 102.

  According to this embodiment mode, a partition wall using a resin material can be manufactured with a simple method with good reproducibility. Thus, a light-emitting display device with low variation and low cost can be manufactured. In addition, since the taper angle of the partition wall is not so large as 20 ° to 50 °, it is possible to prevent the film formed on the partition wall from being thinned. Therefore, it can be avoided that the physical strength of the film on the partition wall is reduced.

  Note that this embodiment mode can be combined with any of the examples if necessary.

  4A to 4D, FIGS. 5A to 5C, FIGS. 6A to 6C, and FIGS. 6A to 6C are diagrams illustrating a method for manufacturing a semiconductor device using the present invention. 7 (A) to FIG. 7 (B) and FIGS. 8 (A) to 8 (B), FIG. 9 (A) to FIG. 9 (B), FIG. 10, FIG. 11, and FIG.

  First, as shown in FIG. 4A, a base film 502 is formed over a substrate 501. As the substrate 501, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a stainless steel substrate, or the like can be used. Further, it is also possible to use a substrate made of a plastic such as PET (polyethylene terephthalate), PES (polyethersulfone), or PEN (polyethylene naphthalate), or a flexible synthetic resin such as acrylic.

  The base film 502 is provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the substrate 501 from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element.

  As the base film 502, silicon oxide, silicon nitride, silicon oxide containing nitrogen, silicon nitride containing oxygen, or the like can be used, and a single layer or a stacked structure of two layers or three layers may be used. In addition, when using a substrate that contains alkali metal or alkaline earth metal, such as a glass substrate, stainless steel substrate, or plastic substrate, it is effective to provide a base film from the viewpoint of preventing impurity diffusion. However, when diffusion of impurities does not cause any problem, such as a quartz substrate, it is not necessarily provided.

In this embodiment, a silicon nitride film containing oxygen is formed as a lower base film 502a on the substrate using SiH ₄ , NH ₃ , N ₂ O, N ₂ and H ₂ as reaction gases, and SiH ₄ is formed thereon. Then, a silicon oxide film containing nitrogen is formed as an upper base film 502b with a film thickness of 100 nm using N ₂ O as a reaction gas. The thickness of the silicon nitride film containing oxygen may be 140 nm, and the thickness of the silicon oxide film containing nitrogen to be stacked may be 100 nm.

  Next, a semiconductor film 503 is formed over the base film 502. The thickness of the semiconductor film 503 is 25 nm to 100 nm (preferably 30 nm to 60 nm). As the semiconductor, not only silicon (Si) but also silicon germanium (SiGe) can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

  The semiconductor film 503 is formed using an amorphous semiconductor (hereinafter also referred to as “amorphous semiconductor”) or a semi-amorphous semiconductor (microcrystalline or microcrystalline) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas such as silane or germane. Also referred to as a crystal.

A semi-amorphous semiconductor (SAS) is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy, It includes a crystalline region with distance order and lattice distortion. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is a main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ^−1. Yes.

  In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. Hydrogen or halogen is contained at least 1 atomic% or more as a terminal for dangling bonds (dangling bonds).

SAS is formed by glow discharge decomposition (plasma CVD) of a gas containing silicon. As a gas containing silicon, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _4, or the like can be used. Further, F ₂ and GeF ₄ may be mixed. The gas containing silicon may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne.

  The dilution rate is in the range of 2 to 1000 times, the pressure is in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or lower, and can be formed even at a substrate heating temperature of 100 to 200 ° C.

Here, as an impurity element mainly taken in at the time of film formation, impurities derived from atmospheric components such as oxygen, nitrogen, and carbon are preferably 1 × 10 ²⁰ cm ⁻³ or less, and in particular, the oxygen concentration is 5 × 10 5. It is preferable to be ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ⁻³ or less.

  Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a favorable SAS can be obtained. In addition, a SAS layer formed of a hydrogen-based gas may be stacked on a SAS layer formed of a fluorine-based gas as a semiconductor film.

  A typical example of the amorphous semiconductor is hydrogenated amorphous silicon. Further, as described above, a semi-amorphous semiconductor or a semiconductor containing a crystal phase in part of a semiconductor film can also be used.

  In this embodiment, an amorphous silicon film with a thickness of 54 nm is formed as the semiconductor film 503 by plasma CVD.

  Next, a metal element that promotes crystallization of the semiconductor is introduced into the semiconductor film 503. A method for introducing a metal element into the semiconductor film 503 is not particularly limited as long as the metal element can be present on the surface of the semiconductor film 503 or inside thereof. For example, a sputtering method, a CVD method, a plasma treatment method (plasma) A CVD method), an adsorption method, and a method of adding a metal salt solution can be used.

  Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the semiconductor film 503 and to spread the aqueous solution over the entire surface of the amorphous semiconductor film, irradiation with UV light in an oxygen atmosphere, thermal oxidation, ozone containing hydroxy radicals It is desirable to form an oxide film by treatment with water or hydrogen peroxide.

  Examples of metal elements that promote semiconductor crystallization include nickel (Ni), germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), lead (Pb), cobalt (Co), and platinum (Pt ), Copper (Cu), gold (Au), or a single element or a plurality of elements. In this embodiment, nickel (Ni) is used as a metal element, and a liquid nickel acetate solution is added to the surface of the semiconductor film 503 as a solution 504 containing the metal element by a spin coating method (see FIG. 4A).

  Next, hydrogen in the semiconductor film 503 is released by holding at 450 to 500 ° C. for 1 hour in a nitrogen atmosphere. This is because the threshold energy for subsequent crystallization is lowered by intentionally forming a dangling bond in the semiconductor film 503.

  Then, by performing heat treatment at 550 to 600 ° C. for 4 to 8 hours in a nitrogen atmosphere, the semiconductor film 503 is crystallized to obtain a crystalline semiconductor film 505. With this metal element, the crystallization temperature of the semiconductor film 503 can be set to a relatively low temperature of 550 to 600 ° C.

  Next, the crystalline semiconductor film 505 is irradiated with a linear laser beam 500 to further improve crystallinity (see FIG. 4B).

  In the case of performing laser crystallization, heat treatment for one hour at 500 ° C. may be applied to the crystalline semiconductor film 505 in order to increase resistance of the crystalline semiconductor film 505 to the laser before laser crystallization.

  For laser crystallization, a pulsed laser having an oscillation frequency of 10 MHz or more, preferably 80 MHz or more can be used as a continuous wave laser or a pseudo CW laser.

Specifically, as a continuous wave laser, Ar laser, Kr laser, CO ₂ laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, GdVO ₄ laser, Y ₂ O ₃ laser, ruby laser, alexandrite laser Ti: sapphire laser, helium cadmium laser, and the like.

As a pseudo CW laser, an Ar laser, a Kr laser, an excimer laser, a CO ₂ laser, a YAG laser, a Y ₂ O ₃ laser, a YVO can be used as long as it can oscillate a pulse having an oscillation frequency of 10 MHz or more, preferably 80 MHz or more. _A pulsed laser such as a ₄ laser, a YLF laser, a YAlO ₃ laser, a GdVO ₄ laser, a glass laser, a ruby laser, an alexandrite laser, a Ti: sapphire laser, a copper vapor laser, or a gold vapor laser can be used.

  Such a pulsed laser has an effect equivalent to that of a continuous wave laser as the oscillation frequency is increased.

For example, when a solid-state laser capable of continuous oscillation is used, a crystal having a large grain size can be obtained by irradiating laser light of second to fourth harmonics. Typically, it is desirable to use the second harmonic (532 nm) or the third harmonic (355 nm) of a YAG laser (fundamental wave 1064 nm). For example, laser light emitted from a continuous wave YAG laser is converted into a harmonic by a non-linear optical element, and irradiated to the semiconductor film 505. Energy density may be about 0.01 to 100 MW / cm ² (preferably 0.1~10MW / cm ^2).

  Note that laser light irradiation may be performed in an atmosphere containing an inert gas such as a rare gas or nitrogen. Thereby, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold voltage caused by variation in interface state density can be suppressed.

  By irradiation of the semiconductor film 505 with the laser beam 500, the crystalline semiconductor film 506 with higher crystallinity is formed (see FIG. 4C).

  Next, as illustrated in FIG. 4D, an island-shaped semiconductor film 507, an island-shaped semiconductor film 508, an island-shaped semiconductor film 509, and an island-shaped semiconductor film 510 are formed using the crystalline semiconductor film 506. The island-shaped semiconductor film 507 to the island-shaped semiconductor film 510 serve as an active layer of a TFT formed in the subsequent steps.

Next, impurities for threshold control are introduced into the island-shaped semiconductor film 507 to the island-shaped semiconductor film 510. In this embodiment, boron (B) is introduced into each of the island-shaped semiconductor films 507 to 510 by doping with diborane (B ₂ H ₆ ).

  Next, an insulating film 511 is formed so as to cover the island-shaped semiconductor film 507 to the island-shaped semiconductor film 510. For the insulating film 511, for example, silicon oxide, silicon nitride, silicon oxide containing nitrogen, or the like can be used. As a film formation method, a plasma CVD method, a sputtering method, or the like can be used.

  Next, after a conductive film is formed over the insulating film 511, a first conductive film 512 and a second conductive film 513 are formed, and these are used to form a gate electrode 515, a gate electrode 516, a gate electrode 517, and a gate electrode. A gate electrode 519 is formed 518.

  The gate electrodes 515 to 519 are formed using a structure in which a single conductive film or two or more conductive films are stacked. In the case where two or more conductive films are stacked, an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al), or the element as a main component Alternatively, the gate electrode 515 to the gate electrode 519 may be formed by stacking alloy materials or compound materials to be stacked. Alternatively, the gate electrode may be formed using a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus (P).

  In this embodiment, first, as the first conductive film 512, for example, a tantalum nitride film is formed with a thickness of 10 to 50 nm, for example, 30 nm. Then, as the second conductive film 513, for example, a tungsten (W) film is formed to a thickness of 200 to 400 nm, for example, 370 nm, over the first conductive film 512, and the first conductive film 512 and the second conductive film 513 are formed. (See FIG. 5A).

  Next, the second conductive film and the first conductive film are successively anisotropically etched, and then the second conductive film is isotropically etched, so that the upper gate electrode 515b to the upper gate electrode 519b, the lower gate An electrode 515a to a lower gate electrode 519a are formed. Through the above steps, the gate electrode 515 to the gate electrode 519 are formed (see FIG. 5B).

  The gate electrodes 515 to 519 may be formed as part of the gate wiring, or a gate wiring may be formed separately and the gate electrodes 515 to 519 may be connected to the gate wiring.

  Further, when the gate electrodes 515 to 519 are formed, part of the insulating film 511 is also etched to form the gate insulating film 514.

  Then, an impurity imparting one conductivity (n-type or p-type conductivity) is added to each of the island-shaped semiconductor film 507 to the island-shaped semiconductor film 510 by using the gate electrode 515 to the gate electrode 519 or a resist as a mask. Then, a source region, a drain region, a low concentration impurity region, and the like are formed.

First, phosphorous (P) is introduced into the island-shaped semiconductor film using phosphine (PH ₃ ) with an acceleration voltage of 60 to 120 keV and a dose of 1 × 10 ¹³ to 1 × 10 ¹⁵ cm ⁻² . When this impurity is introduced, a channel formation region 525 and channel formation regions 528 and 531 of the n-channel TFT 543 are formed in the n-channel TFT 542.

In order to manufacture the p-channel TFT 541 and the p-channel TFT 544, diborane (B ₂ H ₆ ) is applied with an applied voltage of 60 to 100 keV, for example, 80 keV, and a dose amount of 1 × 10 ^{13 to} 5 × 10 ¹⁵ cm ⁻² , for example, 3 Boron (B) is introduced into the island-shaped semiconductor film under the condition of × 10 ¹⁵ cm ⁻² . Accordingly, the source region or drain region 521 of the p-channel TFT 541, the source region or drain region 533 of the p-channel TFT 544, and the channel formation region 522 of the p-channel TFT 541 and the p-channel TFT 544 when this impurity is introduced. A channel formation region 534 is formed.

Further, a phosphine (PH ₃ ) is used in the island-shaped semiconductor film 508 of the n-channel TFT 542 and the island-shaped semiconductor film 509 of the n-channel TFT 543, and an applied voltage of 40 to 80 keV, for example, 50 keV, a dose amount of 1.0 × Phosphorus (P) is introduced at 10 ^{15 to} 2.5 × 10 ¹⁶ cm ⁻² , for example, 3.0 × 10 ¹⁵ cm ⁻² . Thus, the low concentration impurity region 524 and the source or drain region 523 of the n-channel TFT 542, the low concentration impurity regions 527 and 530 of the n-channel TFT 543, and the source or drain regions 526, 529 and 532 are formed (FIG. 5 (C)).

In this embodiment, each of the source region or drain region 523 of the n-channel TFT 542 and the source region or drain regions 526, 529, and 532 of the n-channel TFT 543 has a size of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ^−. Phosphorus (P) will be contained at a concentration of ³ .

In addition, phosphorus (P) is present at a concentration of 1 × 10 ^{18 to} 5 × 10 ¹⁹ cm ⁻³ in each of the low-concentration impurity region 524 of the n-channel TFT 542 and the low-concentration impurity regions 527 and 530 of the n-channel TFT 543. included.

Further, boron (B) is contained in the source region or drain region 521 of the p-channel TFT 541 and the source region or drain region 533 of the p-channel TFT 544 at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ , respectively. included.

  Next, a first interlayer insulating film 551 is formed to cover the island-shaped semiconductor film 507 to the island-shaped semiconductor film 510, the gate insulating film 514, and the gate electrode 515 to the gate electrode 519.

  As the first interlayer insulating film 551, an insulating film containing silicon, for example, a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, or a stacked film thereof is formed using a plasma CVD method or a sputtering method. Needless to say, the first interlayer insulating film 551 is not limited to a silicon oxide film or silicon nitride film containing nitrogen, or a laminated film thereof, and other insulating films containing silicon may be used as a single layer or a laminated structure. .

  In this embodiment, after introducing impurities, a silicon oxide film containing nitrogen is formed to a thickness of 50 nm by a plasma CVD method. After the laser irradiation method or the silicon oxide film containing nitrogen is formed, the silicon oxide film is heated in a nitrogen atmosphere at 550 ° C. for 4 hours. , Activate the impurities.

  Next, a silicon nitride film is formed to a thickness of 50 nm by plasma CVD, and a silicon oxide film containing nitrogen is further formed to a thickness of 600 nm. The stacked film of the silicon oxide film containing nitrogen, the silicon nitride film, and the silicon oxide film containing nitrogen is the first interlayer insulating film 551.

  Next, the whole is heated at 410 ° C. for 1 hour, and hydrogen is released by releasing hydrogen from the silicon nitride film.

  Next, a second interlayer insulating film 552 which functions as a planarization film is formed so as to cover the first interlayer insulating film 551 (see FIG. 6A).

  As the second interlayer insulating film 552, a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), siloxane, and a stacked structure thereof can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

  Siloxane is composed of a skeletal structure with a bond of silicon (Si) and oxygen (O), and an organic group containing at least hydrogen as a substituent (for example, an alkyl group, an aromatic hydrocarbon (aryl group)). ) Is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

  In this embodiment, siloxane is formed as the second interlayer insulating film 552 by a spin coating method.

  Note that a third interlayer insulating film may be formed over the second interlayer insulating film 552. As the third interlayer insulating film, a film that hardly transmits moisture, oxygen, or the like as compared with other insulating films is used. Typically, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen (composition ratio N> O) or a silicon oxide film containing nitrogen (composition ratio N <O)) obtained by a sputtering method or a CVD method, A thin film mainly containing carbon (for example, a diamond-like carbon film (DLC film) or a carbon nitride film (CN film)) can be used.

  Next, a transparent conductive film 553 is formed over the second interlayer insulating film 552 (see FIG. 6B). As the transparent conductive film used in the present invention, an indium tin oxide alloy containing silicon (Si) (also referred to as indium tin oxide containing Si) is used.

In addition to the indium tin oxide alloy containing Si, it was formed using a target in which zinc oxide (ZnO), tin oxide (SnO ₂ ), indium oxide, and indium oxide were mixed with ₂ to 20 wt% zinc oxide (ZnO). A transparent conductive film such as a conductive film may be used. In this embodiment, an indium tin oxide alloy containing Si is formed to a thickness of 110 nm as the transparent conductive film 553 by sputtering.

  Next, a pixel electrode 554 is formed using the transparent conductive film 553 (see FIG. 6C). In order to form the pixel electrode 554, the transparent conductive film 553 may be etched by a wet etching method.

  The first interlayer insulating film 551 and the second interlayer insulating film 552 are etched to form contact holes reaching the island-shaped semiconductor film 507 to the island-shaped semiconductor film 510 in the first interlayer insulating film 551 and the second interlayer insulating film 552. It is formed (see FIG. 7A).

  A third conductive film 555 and a fourth conductive film 556 are formed over the second interlayer insulating film 552 through contact holes (see FIG. 7B).

  In this embodiment, the third conductive film 555 may be a film made of molybdenum (Mo), tungsten (W), tantalum (Ta), or chromium (Cr) or an alloy film using these elements. In this embodiment, molybdenum (Mo) is deposited to a thickness of 100 nm by a sputtering method.

  As the fourth conductive film 556, a film containing aluminum as a main component is formed by a sputtering method. The film containing aluminum as a main component is an aluminum alloy film containing at least one element selected from aluminum, nickel, cobalt, and iron, or an aluminum alloy film including at least one element selected from nickel, cobalt, and iron and carbon. Can be used. In this embodiment, an aluminum film is formed to 700 nm by sputtering.

  Next, the fourth conductive film 556 is etched, so that the electrode 561b, the electrode 562b, the electrode 563b, the electrode 564b, the electrode 565b, the electrode 566b, and the electrode 567b are formed (see FIG. 8A).

Etching of the fourth conductive film 556 is performed by dry etching using a mixed gas of BCl ₃ and Cl ₂ . In this embodiment, dry etching is performed by flowing BCl ₃ and Cl ₂ at flow rates of 60 sccm and 20 sccm, respectively.

At this time, the third conductive film 555 serves as an etching stopper, and the pixel electrode 554 is not in contact with the mixed gas of BCl ₃ and Cl ₂ . As a result, generation of particles can be prevented.

Next, the third conductive film 555 is etched to form an electrode 561a, an electrode 562a, an electrode 563a, an electrode 564a, an electrode 565a, an electrode 566a, and an electrode 567a. In this embodiment, dry etching of the third conductive film 555 is performed by flowing CF ₄ and O ₂ at 30 to 60 sccm and 40 to 70 sccm, respectively.

At this time, since the pixel electrode 554 does not react with CF ₄ and O ₂ , fine particles are not formed. In addition, the pixel electrode 554 serves as an etching stopper for etching the third conductive film 555 to form the electrode 567a.

  As described above, the electrode 561, the electrode 562, the electrode 563, the electrode 564, the electrode 565, the electrode 566, and the electrode 567 are formed. In each of the electrodes 561 to 567, the electrode and the wiring may be formed using the same material and the same process, or the electrode and the wiring may be separately formed and connected to each other.

  Through the above series of steps, an n-channel TFT 542, an n-channel TFT 543, a p-channel TFT 541, and a p-channel TFT 544 are formed. The n-channel TFT 542 and the p-channel TFT 541 are connected by an electrode 562 to form a CMOS circuit 571 (see FIG. 8B).

  From the above, the TFT substrate of the dual emission display device is formed. 8B, a driver circuit portion 595 and a pixel portion 596 are provided over a substrate 501, and a CMOS circuit 571 including an n-channel TFT 542 and a p-channel TFT 541 is formed in the driver circuit portion 595. ing.

  In the pixel portion 596, a p-channel TFT 544 serving as a pixel TFT and an n-channel TFT 543 for driving the pixel TFT are formed. In this embodiment, the pixel electrode 554 serves as an anode of the light emitting element.

  Next, using the present invention, after the electrodes 561 to 567 are formed, an insulator 581 (referred to as a partition wall, a barrier, or the like) that covers an end portion of the pixel electrode 554 is formed.

  The insulator 581 is formed based on the description of the above embodiment. That is, an insulating layer containing a thermosetting resin material, a thermoplastic resin material, or a photocurable resin material is formed, formed by pressing a mold, and subjected to heat treatment or light irradiation to form an insulator 581. do it.

  Further, as described in the embodiment mode, the insulator 581 has a cross-sectional taper angle of 20 ° to 50 °, and the bottom and top edges of the insulator 581 are rounded.

  After the insulator 581 is formed, an organic compound layer 582 is formed. Next, the second electrode 583, that is, the cathode of the light-emitting element is formed with a thickness of 10 nm to 800 nm (see FIG. 9B). The second electrode 583 is formed using a target in which, in addition to indium tin oxide alloy (ITO), for example, indium oxide containing Si element is mixed with 2 to 20 wt% zinc oxide (ZnO). Can be used.

  The organic compound layer 582 includes a hole injection layer 601, a hole transport layer 602, a light emitting layer 603, an electron transport layer 604, and an electron injection layer 605 that are formed using a vapor deposition method or a coating method. Note that deaeration is preferably performed by vacuum heating before the formation of the organic compound layer 582 in order to improve the reliability of the light-emitting element. For example, before vapor deposition of the organic compound material, it is desirable to perform a heat treatment at 200 ° C. to 300 ° C. in a reduced pressure atmosphere or an inert atmosphere in order to remove gas contained in the substrate.

  Next, molybdenum oxide and 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (α-NPD) are selectively formed over the pixel electrode 554 using an evaporation mask. Then, rubrene is co-evaporated to form the hole injection layer 601.

  Note that in addition to molybdenum oxide, a material having a high hole-injecting property such as copper phthalocyanine (CuPc), vanadium oxide, ruthenium oxide, or tungsten oxide can be used. In addition, a material in which a high hole-injection polymer material such as a polyethylene dioxythiophene aqueous solution (PEDOT) or a polystyrene sulfonic acid aqueous solution (PSS) is formed by a coating method may be used as the hole injection layer 601.

  Next, α-NPD is selectively deposited using a deposition mask to form a hole transport layer 602 on the hole injection layer 601. In addition to α-NPD, 4,4′-bis [N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N , N-diphenyl-amino) -triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (abbreviation: A material having a high hole transporting property typified by an aromatic amine compound such as MTDATA) can be used.

  Next, the light-emitting layer 603 is selectively formed. In order to obtain a full-color display device, the vapor deposition mask is aligned for each of the emission colors (R, G, B) to selectively deposit each.

Next, Alq ₃ (tris (8-quinolinolato) aluminum) is selectively vapor-deposited using an evaporation mask to form an electron transport layer 604 over the light-emitting layer 603. In addition to Alq ₃ , tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl) A material having a high electron transport property typified by a metal complex having a quinoline skeleton such as -8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq) or a benzoquinoline skeleton can be used.

In addition, bis [2- (2-hydroxyphenyl) -benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) -benzothiazolate] zinc (abbreviation: Zn ( A metal complex having an oxazole-based or thiazole-based ligand such as BTZ) ₂ ) can also be used.

  In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5 (4-Biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2 1, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used as the electron-transport layer 604 because of their high electron-transport properties.

  Next, 4,4-bis (5-methylbenzoxazol-2-yl) stilbene (abbreviation: BzOs) and lithium (Li) are co-evaporated to cover the electron transport layer 604 and the insulator 581 and inject electrons onto the entire surface. Layer 605 is formed. By using the benzoxazole derivative (BzOs), damage due to the sputtering method at the time of forming the second electrode 583 performed in a later process is suppressed.

In addition to BzOs: Li, a material having a high electron-injection property such as an alkali metal or alkaline earth metal compound such as CaF ₂ , lithium fluoride (LiF), and cesium fluoride (CsF) can be used. . In addition, a mixture of Alq ₃ and magnesium (Mg) can also be used.

  Next, the second electrode 583, that is, the cathode of the organic light-emitting element is formed over the electron injecting layer 605 in a thickness range of 10 nm to 800 nm. As the second electrode 583, in addition to an indium tin oxide alloy (ITO), for example, an indium tin oxide alloy containing Si or a conductive material formed using a target containing 2 to 20 atomic% zinc oxide (ZnO) in indium oxide. A membrane can be used.

  Note that since an example in which a dual emission display device is manufactured is described in this embodiment, a light-transmitting electrode is used for the second electrode 583, but in the case of manufacturing a single emission display device. The second electrode 583 may be formed using a reflective conductive material. As such a conductive material, a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (work function of 3.8 eV or less) is preferably used.

Note that specific examples of the material of the second electrode 583 include elements belonging to Group 1 or Group 2 of the periodic table, that is, alkali metals such as Li and Cs, and alkaline earth metals such as Mg, Ca, and Sr. In addition to alloys containing these (Mg: Ag, Al: Li) and compounds (LiF, CsF, CaF ₂ ), transition metals including rare earth metals can be used, but metals such as Al and Ag ( It can also be formed by lamination with an alloy.

  As described above, the light-emitting element 584 is manufactured. The materials for the anode 554, the organic compound layer 582, and the cathode 583 included in the light-emitting element 584 are appropriately selected, and the film thicknesses are also adjusted. It is desirable that the same material is used for the anode and the cathode, and the film thickness is approximately the same, preferably approximately 100 nm.

  If necessary, as shown in FIG. 9B, a transparent protective layer 585 which covers the light-emitting element 584 and prevents moisture from entering is formed. As the transparent protective layer 585, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen (composition ratio N> O) or a silicon oxide film containing nitrogen (composition ratio N <O) obtained by sputtering or CVD is used. A thin film mainly containing carbon (for example, a diamond-like carbon film (DLC film), a carbon nitride film (CN film)), or the like can be used. FIG. 10 shows an enlarged view of a part of FIG.

  FIG. 12 shows an example in which the pixel TFTs in the pixel portion are separately formed by RGB. In the pixel for red (R), a pixel TFT 544R is connected to the pixel electrode 554R, and a hole injection layer 601R, a hole transport layer 602R, a light emitting layer 603R, an electron transport layer 604R, an electron injection layer 605R, and a cathode 583. A transparent protective layer 585 is formed.

  In the pixel for green (G), a pixel TFT 544G is connected to the pixel electrode 554G, and a hole injection layer 601G, a hole transport layer 602G, a light emitting layer 603G, an electron transport layer 604G, an electron injection layer 605G, a cathode 583 and a transparent protective layer 585 are formed.

  Further, the pixel TFT 544B is connected to the pixel electrode 554B in the blue (B) pixel, and the hole injection layer 601B, the hole transport layer 602B, the light emitting layer 603B, the electron transport layer 604B, the electron injection layer 605B, the cathode 583 and a transparent protective layer 585 are formed.

A material such as Alq ₃ : DCM1 or Alq ₃ : rubrene: BisDCJTM is used for the light-emitting layer 603R that emits red light. For the light-emitting layer 603G that emits green light, a material such as Alq ₃ : DMQD (N, N′-dimethylquinacridone) or Alq ₃ : coumarin 6 is used. For the light-emitting layer 603B that emits blue light, a material such as α-NPD or tBu-DNA is used.

  Next, a sealant 593 containing a gap material for securing a substrate interval is provided over the driver circuit portion 595 including the CMOS circuit 571, and the second substrate 591 and the substrate 501 are attached to each other. As the second substrate 591, a light-transmitting glass substrate or quartz substrate may be used.

  Note that in the gap between the substrates 501 and 591, a desiccant may be disposed as a gap (inert gas) in a region 592 where the pixel portion 596 is provided, or a transparent sealing material (ultraviolet curing or heat treatment). A cured epoxy resin or the like may be filled.

  In the light-emitting element, since the pixel electrode 554 and the second electrode 583 are formed using a light-transmitting material, light can be collected from one light-emitting element in two directions, that is, from both sides.

  With the panel configuration described above, light emission from the upper surface and light emission from the lower surface can be made substantially the same.

  Further, optical films (polarizing plates or circularly polarizing plates) 597 and 598 may be provided on the substrates 501 and 591 to improve contrast (see FIG. 11).

  In this embodiment, the top gate type TFT is used as the TFT. However, the present invention is not limited to this structure, and a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used as appropriate. . Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  According to this embodiment, a partition wall using a resin material can be manufactured with a simple method and good reproducibility. Thus, a semiconductor device with low variation and low cost can be manufactured. In addition, since the taper angle of the partition wall is not so large as 20 ° to 50 °, it is possible to prevent the film formed on the partition wall from being thinned. Therefore, it can be avoided that the physical strength of the film on the partition wall is reduced.

  Further, this embodiment can be freely combined with the embodiment mode and other embodiments if necessary.

  In this embodiment, an example in which the present invention is applied to an inorganic EL element will be described with reference to FIGS. 13 (A) to 13 (C) and FIGS. 14 (A) to 14 (C).

  A light-emitting element utilizing electroluminescence is distinguished depending on whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element and the latter is called an inorganic EL element. An example in which the organic EL element is used in the present invention is described in Example 1.

  Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has an electroluminescent layer in which particles of a luminescent material are dispersed in a binder, and the latter has an electroluminescent layer made of a thin film of luminescent material, but is accelerated by a high electric field. This is common in that it requires more electrons.

  Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. In general, the dispersion-type inorganic EL element often has donor-acceptor recombination light emission, and the thin-film inorganic EL element often has localized light emission.

  A light-emitting material that can be used in the present invention includes a base material and an impurity element serving as a light emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method and a liquid phase method (coprecipitation method) can be used. Also, spray pyrolysis method, metathesis method, precursor thermal decomposition method, reverse micelle method, method combining these methods with high temperature firing, liquid phase method such as freeze-drying method, etc. can be used.

  The solid phase method is a method in which a base material and an impurity element or a compound containing the impurity element are weighed, mixed in a mortar, heated and fired in an electric furnace, reacted, and the base material contains the impurity element. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

  The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing the impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

As a base material used for the light-emitting material, sulfide, oxide, or nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide. Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. As the nitride, for example, aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), or the like can be used.

Further, as a base material used for a light emitting material, zinc selenide (ZnSe), zinc telluride (ZnTe), or the like can also be used. Calcium sulfide-gallium (CaGa ₂ S ₄ ), strontium sulfide-gallium (SrGa ₂ S ₄ ) Or a ternary mixed crystal such as barium-gallium sulfide (BaGa ₂ S ₄ ).

  As emission centers of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

  On the other hand, a light-emitting material containing a first impurity element that forms a donor level and a second impurity element that forms an acceptor level can be used as the emission center of donor-acceptor recombination light emission. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. For example, copper (Cu), silver (Ag), or the like can be used as the second impurity element.

  In the case where a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, a second impurity element, or a second impurity element Each compound containing an impurity element is weighed and mixed in a mortar, and then heated and fired in an electric furnace.

As the base material, the above-described base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) or the like, and examples of the second impurity element or the compound containing the second impurity element include copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), and silver sulfide (Ag). ₂ S) or the like can be used.

  The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

  In addition, as an impurity element in the case of using a solid phase reaction, a compound including a first impurity element and a second impurity element may be used. In this case, since the impurity element is easily diffused and the solid-phase reaction easily proceeds, a uniform light emitting material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. As the compound including the first impurity element and the second impurity element, for example, copper chloride (CuCl), silver chloride (AgCl), or the like can be used.

  Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

  In the case of a thin-film inorganic EL, the electroluminescent layer is a layer containing the above-described luminescent material, and is a physical vapor deposition method such as a resistance heating vapor deposition method, a vacuum vapor deposition method such as an electron beam vapor deposition (EB vapor deposition) method, or a sputtering method ( PVD), metal organic chemical vapor deposition (CVD), chemical vapor deposition (CVD) such as hydride transport low pressure CVD, atomic layer epitaxy (ALE), or the like.

  FIGS. 13A to 13C illustrate an example of a thin-film inorganic EL element that can be used as a light-emitting element. 13A to 13C, the light-emitting element includes a first electrode layer 250, an electroluminescent layer 252, and a second electrode layer 253.

  In order to fabricate a light-emitting device using the light-emitting elements of FIGS. 13A to 13C, the light-emitting device of FIG. The light-emitting element may be replaced with the light-emitting element 584 in FIG.

  13B and 13C has a structure in which an insulating layer is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. 13A. 13B includes an insulating layer 254 between the first electrode layer 250 and the electroluminescent layer 252, and the light-emitting element illustrated in FIG. 13C includes the first electrode layer 250. And an electroluminescent layer 252, and an insulating layer 254 b is provided between the second electrode layer 253 and the electroluminescent layer 252. Thus, the insulating layer may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. Further, the insulating layer may be a single layer or a stacked layer including a plurality of layers.

  In FIG. 13B, the insulating layer 254 is provided so as to be in contact with the first electrode layer 250; however, the order of the insulating layer and the electroluminescent layer is reversed so as to be in contact with the second electrode layer 253. An insulating layer 254 may be provided.

  In the case of a dispersion-type inorganic EL element, a particulate light emitting material is dispersed in a binder to form a film-like electroluminescent layer. When particles having a desired size cannot be obtained sufficiently by the method for manufacturing a light emitting material, the particles may be processed into particles by pulverization or the like in a mortar or the like. A binder is a substance for fixing a granular light emitting material in a dispersed state and maintaining the shape as an electroluminescent layer. The light emitting material is uniformly dispersed and fixed in the electroluminescent layer by the binder.

  In the case of a dispersion-type inorganic EL element, the electroluminescent layer can be formed by a droplet discharge method capable of selectively forming an electroluminescent layer, a printing method (screen printing, offset printing, etc.), a coating method such as a spin coating method, A dipping method, a dispenser method, or the like can also be used. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the electroluminescent layer including the light emitting material and the binder, the ratio of the light emitting material may be 50 wt% or more and 80 wt% or less.

  14A to 14C illustrate an example of a dispersion-type inorganic EL element that can be used as a light-emitting element. The light-emitting element in FIG. 14A has a stacked structure of a first electrode layer 260, an electroluminescent layer 262, and a second electrode layer 263, and a light-emitting material 261 held in a binder in the electroluminescent layer 262. Including.

  In order to fabricate a light-emitting device using the light-emitting elements of FIGS. 14A to 14C, the light-emitting device of FIG. The light-emitting element may be replaced with the light-emitting element 584 in FIG.

  As a binder that can be used in this embodiment, an insulating material can be used, an organic material or an inorganic material can be used, and a mixed material of an organic material and an inorganic material may be used. As the organic insulating material, a polymer having a relatively high dielectric constant such as a cyanoethyl cellulose resin, or a resin such as polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used.

  Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon (aryl group)) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used. The dielectric constant can be adjusted by appropriately mixing fine particles of high dielectric constant such as barium titanate (BaTiO ₃ ) and strontium titanate (SrTiO ₃ ) with these resins.

As the inorganic material contained in the binder, silicon oxide (SiOx), silicon nitride (SiNx), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen or aluminum oxide (Al ₂ O ₃ ), Titanium oxide (TiO ₂ ), BaTiO ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KNbO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), barium tantalate ( BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y ₂ O ₃ ), zirconium oxide (ZrO ₂ ), ZnS, and other materials including inorganic materials can be used. . By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the electroluminescent layer made of the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased. .

  In the manufacturing process, the light emitting material is dispersed in a solution containing a binder, but as a solvent of the solution containing the binder that can be used in this embodiment, a method of forming an electroluminescent layer by dissolving the binder material (various wet types) A solvent capable of producing a solution having a viscosity suitable for the process) and a desired film thickness may be appropriately selected. For example, when a siloxane resin is used as a binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB) can be used. Etc. can be used.

  14B and 14C has a structure in which an insulating layer is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. 14A. The light-emitting element illustrated in FIG. 14B includes an insulating layer 264 between the first electrode layer 260 and the electroluminescent layer 262, and the light-emitting element illustrated in FIG. 14C includes the first electrode layer 260. And an electroluminescent layer 262, and an insulating layer 264b is provided between the second electrode layer 263 and the electroluminescent layer 262. Thus, the insulating layer may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. Further, the insulating layer may be a single layer or a stacked layer including a plurality of layers.

  In FIG. 14B, the insulating layer 264 is provided so as to be in contact with the first electrode layer 260; however, the order of the insulating layer and the electroluminescent layer is reversed so as to be in contact with the second electrode layer 263. An insulating layer 264 may be provided on the substrate.

  The insulating layer 254 in FIGS. 13A to 13C and the insulating layer 264 in FIGS. 14A to 14C are not particularly limited; A high and dense film quality is preferable, and furthermore, a high dielectric constant is preferable.

For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTiO ₃ ), strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., a mixed film thereof, or two or more kinds thereof A laminated film can be used.

  These insulating layers can be formed by sputtering, vapor deposition, CVD, or the like. The insulating layer may be formed by dispersing particles of these insulating materials in a binder. The binder material may be formed using the same material and method as the binder contained in the electroluminescent layer. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm.

  The light-emitting element described in this embodiment can emit light by applying a voltage between a pair of electrode layers sandwiching an electroluminescent layer, but can operate in either DC driving or AC driving.

  According to this embodiment, a partition wall using a resin material can be manufactured with a simple method and good reproducibility. Thus, a semiconductor device including an inorganic EL element with little variation and low cost can be manufactured. In addition, since the taper angle of the partition wall is not so large as 20 ° to 50 °, it is possible to prevent the film formed on the partition wall from being thinned. Therefore, it can be avoided that the physical strength of the film on the partition wall is reduced.

  Further, this embodiment can be freely combined with the embodiment mode and other embodiments if necessary.

  As an electronic device to which the present invention is applied, a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device (car audio component, etc.), a computer, a game device, a portable information terminal (mobile computer, cellular phone, portable type) A game machine or an electronic book), an image playback device provided with a recording medium (specifically, a device provided with a display capable of playing back a recording medium such as a Digital Versatile Disc (DVD) and displaying the image). It is done.

  Specific examples of these electronic devices are shown in FIGS. 15, 16, 17A to 17B, 18, 19, 20, 21A to 21E.

  FIG. 15 shows an EL module in which a display panel 301 and a circuit board 311 are combined. A control circuit 312, a signal dividing circuit 313, and the like are formed on the circuit board 311, and are electrically connected to the display panel 301 by connection wiring 314.

  The display panel 301 includes a pixel portion 302 provided with a plurality of pixels, a scanning line driving circuit 303, and a signal line driving circuit 304 for supplying a video signal to the selected pixel. The display panel 301 of the EL module may be manufactured using the method for manufacturing a display device described in Embodiment 1 or 2.

  A television receiver can be completed with the EL module shown in FIG. FIG. 16 is a block diagram showing the main configuration of the receiver. The tuner 321 receives video signals and audio signals. The video signal includes a video signal amplifying circuit 322, a video signal processing circuit 323 that converts a signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and the video signal as input specifications of the driver IC. Processing is performed by the control circuit 312 for conversion. The control circuit 312 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 313 may be provided on the signal line side, and an input digital signal may be divided into m pieces and supplied.

  Of the signals received by the tuner 321, the audio signal is sent to the audio signal amplifier circuit 325, and the output is supplied to the speaker 327 via the audio signal processing circuit 326. The control circuit 328 receives control information on the receiving station (reception frequency) and volume from the input unit 329 and sends a signal to the tuner 321 and the audio signal processing circuit 326.

  As shown in FIG. 17A, an EL module can be incorporated into a housing 331 to complete a television receiver. A display screen 332 is formed by the EL module. In addition, a speaker 333, an operation switch 334, and the like are provided as appropriate.

  FIG. 17B illustrates a television receiver that can carry only a display wirelessly. A battery and a signal receiver are incorporated in the housing 342, and the display portion 343 and the speaker portion 347 are driven by the battery. The battery can be repeatedly charged by the charger 340. In addition, the charger 340 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display. The housing 342 is controlled by operation keys 346.

  The device illustrated in FIG. 17B can also be referred to as a video / audio two-way communication device because a signal can be sent from the housing 342 to the charger 340 by operating the operation key 346. Further, by operating the operation key 346, a signal is transmitted from the housing 342 to the charger 340, and further, a signal that can be transmitted by the charger 340 is received by another electronic device, so that communication control of the other electronic device can be performed. It can be said to be a general-purpose remote control device. The present invention can be applied to the display portion 343.

  By using the present invention for the television receiver shown in FIGS. 15, 16, 17A to 17B, a television receiver having a display device with little variation and low manufacturing cost can be obtained. it can.

  Of course, the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

  18 and 19 show a module in which a display panel 351 and a printed wiring board 352 are combined. The display panel 351 includes a pixel portion 353 provided with a plurality of pixels, a first scan line driver circuit 354, a second scan line driver circuit 355, and a signal line driver circuit that supplies a video signal to the selected pixel. 356.

  The printed wiring board 352 includes a controller 357, a central processing unit (CPU) 358, a memory 359, a power supply circuit 360, an audio processing circuit 361, a transmission / reception circuit 362, and the like. The printed wiring board 352 and the display panel 351 are connected by a flexible wiring board (FPC) 363. The printed wiring board 352 may be provided with a capacitor, a buffer circuit, or the like so that noise is added to the power supply voltage or the signal or the rise of the signal is not slowed. The controller 357, the audio processing circuit 361, the memory 359, the CPU 358, the power supply circuit 360, and the like can be mounted on the display panel 351 by using a COG (Chip On Glass) method. The scale of the printed wiring board 352 can be reduced by the COG method.

  Various control signals are input and output through an interface 364 provided on the printed wiring board 352. An antenna port 365 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 352.

  FIG. 19 shows a block diagram of the module shown in FIG. This module includes a VRAM 366, a DRAM 367, a flash memory 368, and the like as the memory 359. The VRAM 366 stores image data to be displayed on the panel, the DRAM 367 stores image data or audio data, and the flash memory stores various programs.

  The power supply circuit 360 supplies power for operating the display panel 351, the controller 357, the CPU 358, the sound processing circuit 361, the memory 359, and the transmission / reception circuit 362. Depending on the panel specifications, the power supply circuit 360 may be provided with a current source.

  The CPU 358 includes a control signal generation circuit 370, a decoder 371, a register 372, an arithmetic circuit 373, a RAM 374, an interface 379 for the CPU 358, and the like. Various signals input to the CPU 358 via the interface 379 are once held in the register 372 and then input to the arithmetic circuit 373, the decoder 371, and the like. The arithmetic circuit 373 performs an operation based on the input signal and designates a place to send various commands. On the other hand, the signal input to the decoder 371 is decoded and input to the control signal generation circuit 370. The control signal generation circuit 370 generates a signal including various instructions based on the input signal, and a location designated by the arithmetic circuit 373, specifically, a memory 359, a transmission / reception circuit 362, an audio processing circuit 361, a controller 357, and the like. Send to.

  The memory 359, the transmission / reception circuit 362, the sound processing circuit 361, and the controller 357 operate according to the received commands. The operation will be briefly described below.

  A signal input from the input unit 375 is sent to the CPU 358 mounted on the printed wiring board 352 via the interface 364. The control signal generation circuit 370 converts the image data stored in the VRAM 366 into a predetermined format in accordance with a signal sent from the input unit 375 such as a pointing device or a keyboard, and sends the image data to the controller 357.

  The controller 357 performs data processing on a signal including image data sent from the CPU 358 according to the specifications of the panel and supplies the processed signal to the display panel 351. The controller 357 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R based on the power supply voltage input from the power supply circuit 360 and various signals input from the CPU 358. It is generated and supplied to the display panel 351.

  The transmission / reception circuit 362 processes signals transmitted / received as radio waves in the antenna 378. Specifically, high-frequency signals such as isolators, bandpass filters, VCOs (Voltage Controlled Oscillators), LPFs (Low Pass Filters), couplers, and baluns are used. Includes circuitry. A signal including audio information among signals transmitted and received in the transmission / reception circuit 362 is sent to the audio processing circuit 361 in accordance with a command from the CPU 358.

  A signal including audio information sent in accordance with a command from the CPU 358 is demodulated into an audio signal by the audio processing circuit 361 and sent to the speaker 377. The audio signal sent from the microphone 376 is modulated by the audio processing circuit 361 and sent to the transmission / reception circuit 362 in accordance with a command from the CPU 358.

  The controller 357, the CPU 358, the power supply circuit 360, the sound processing circuit 361, and the memory 359 can be mounted as a package of this embodiment. This embodiment can be applied to any circuit other than a high-frequency circuit such as an isolator, a band pass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler, and a balun.

  FIG. 20 shows one mode of a mobile phone including the module shown in FIGS. The display panel 351 is incorporated in the housing 380 so as to be detachable. The shape and dimensions of the housing 380 can be changed as appropriate in accordance with the size of the display panel 351. The housing 380 to which the display panel 351 is fixed is fitted on the printed circuit board 381 and assembled as a module.

  The display panel 351 is connected to the printed board 381 through the FPC 363. A signal processing circuit 385 including a speaker 382, a microphone 383, a transmission / reception circuit 384, a CPU, a controller, and the like is formed on the printed board 381. Such a module is combined with the input means 386, the battery 387, and the antenna 390 and stored in the housing 389. The pixel portion of the display panel 351 is arranged so that it can be seen from an opening window formed in the housing 389.

The mobile phone according to the present embodiment can be transformed into various modes according to the function and application. For example, the above-described effects can be obtained even when a plurality of display panels are provided, or the housing is divided into a plurality of cases and is opened and closed by a hinge.
it can.

  By using the present invention for the mobile phone shown in FIGS. 18, 19, and 20, a mobile phone having a display device with little variation and low manufacturing cost can be obtained.

  FIG. 21A illustrates an EL display which includes a housing 401, a support base 402, a display portion 403, and the like. The present invention can be applied to the display portion 403 by using the structure of the EL module shown in FIG. 15 and the display panel shown in FIG.

  By using the present invention, a display having a display device with little variation and low manufacturing cost can be obtained.

  FIG. 21B illustrates a computer, which includes a main body 411, a housing 412, a display portion 413, a keyboard 414, an external connection port 415, a pointing device 416, and the like. The present invention can be applied to the display portion 413 using the structure of the EL module shown in FIG. 15 and the display panel shown in FIG.

  By using the present invention, a computer having a display device with little variation and low manufacturing cost can be obtained.

  FIG. 21C illustrates a portable computer, which includes a main body 421, a display portion 422, a switch 423, operation keys 424, an infrared port 425, and the like. The present invention can be applied to the display portion 422 by using the structure of the EL module shown in FIG. 15 and the display panel shown in FIG.

  By using the present invention, a computer having a display device with little variation and low manufacturing cost can be obtained.

  FIG. 21D illustrates a portable game machine including a housing 431, a display portion 432, a speaker portion 433, operation keys 434, a recording medium insertion portion 435, and the like. The present invention can be applied to the display portion 432 using the structure of the EL module shown in FIG. 15 and the display panel shown in FIG.

  By using the present invention, a game machine having a display device with little variation and low manufacturing cost can be obtained.

  FIG. 21E illustrates a portable image playback device (specifically, a DVD playback device) including a recording medium, which includes a main body 441, a housing 442, a first display portion 443, a second display portion 444, A recording medium reading unit 445, operation keys 446, a speaker unit 447, and the like are included. Note that the recording medium includes a DVD or the like.

  The first display unit 443 mainly displays image information, and the second display unit 444 mainly displays character information. The present invention can be applied to the first display portion 443 and the second display portion 444 by using the structure of the EL module shown in FIG. 15 and the display panel shown in FIG. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

  By using the present invention, an image reproducing device having a display device with little variation and low manufacturing cost can be obtained.

  Display devices used in these electronic devices can use not only a glass substrate but also a heat-resistant plastic substrate depending on the size, strength, or purpose of use. As a result, the weight can be further reduced.

  In addition, the example shown in the present embodiment is only an example, and is not limited to these applications.

  According to this embodiment, a partition wall using a resin material can be manufactured with a simple method and good reproducibility. Accordingly, an electronic device having a display device with low variation and low cost can be manufactured. In addition, since the taper angle of the partition wall is not so large as 20 ° to 50 °, it is possible to prevent the film formed on the partition wall from being thinned. Therefore, it can be avoided that the physical strength of the film on the partition wall is reduced.

  In addition, this embodiment can be freely combined with the embodiment mode and other embodiments.

  In the present invention, when the partition walls are formed using the nanoimprint method, a plurality of partition walls can be formed with good reproducibility. Thus, a display device with little variation and low manufacturing cost can be manufactured.

10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device of the present invention. The figure which shows EL module of this invention. 1 is a block diagram illustrating a configuration of a receiver according to the present invention. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. The figure which shows the module of this invention. The figure which shows the module of this invention. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. Sectional drawing which shows this invention and the conventional semiconductor device.

Explanation of symbols

101 substrate 102 electrode 102a electrode 102b electrode 102c electrode 102d electrode 104 insulating layer 105 mold 107 opening 107a opening 107b opening 107c opening 107d opening 109 insulating layer 112 partition 113 light emitting layer 113a light emitting layer 113b light emitting layer 113c light emitting layer 113d Light emitting layer 114 Electrode 114a Electrode 114b Electrode 114c Electrode 114d Electrode 151 Partition 151a Partition 151b Partition 152 Opening 250 Electrode layer 252 Electroluminescent layer 253 Electrode layer 253 Insulating layer 254a Insulating layer 254b Insulating layer 260 Electrode layer 261 Light emitting material 262 Electroluminescent layer 263 Electrode layer 264 Insulating layer 264a Insulating layer 264b Insulating layer 301 Display panel 302 Pixel portion 303 Scan line driver circuit 304 Signal line driver circuit 311 Circuit board 312 Control circuit 13 Signal division circuit 314 Connection wiring 321 Tuner 322 Video signal amplification circuit 323 Video signal processing circuit 325 Audio signal amplification circuit 326 Audio signal processing circuit 327 Speaker 328 Control circuit 329 Input unit 331 Housing 332 Display screen 333 Speaker 334 Operation switch 340 Charging Device 342 Housing 343 Display unit 346 Operation key 347 Speaker unit 351 Display panel 352 Printed wiring board 353 Pixel unit 354 Scan line drive circuit 355 Scan line drive circuit 356 Signal line drive circuit 357 Controller 358 CPU
359 Memory 360 Power supply circuit 361 Audio processing circuit 362 Transmission / reception circuit 363 FPC
364 Interface 365 Antenna port 366 VRAM
367 DRAM
368 Flash memory 370 Control signal generation circuit 371 Decoder 372 Register 373 Arithmetic circuit 374 RAM
375 Input means 376 Microphone 377 Speaker 378 Antenna 379 Interface 380 Housing 381 Printed circuit board 382 Speaker 383 Microphone 384 Transmission / reception circuit 385 Signal processing circuit 386 Input means 387 Battery 389 Case 390 Antenna 401 Case 402 Support base 403 Display unit 411 Main body 412 Case Body 413 Display unit 414 Keyboard 415 External connection port 416 Pointing device 421 Main unit 422 Display unit 423 Switch 424 Operation key 425 Infrared port 431 Case 432 Display unit 433 Speaker unit 434 Operation key 435 Recording medium insertion unit 441 Main unit 442 Case 443 Display Unit 444 display unit 445 recording medium reading unit 446 operation key 447 speaker unit 501 substrate 502 base film 502a lower base film 5 2b Upper layer base film 503 Semiconductor film 504 Solution 505 Semiconductor film 506 Crystalline semiconductor film 507 Island-like semiconductor film 508 Island-like semiconductor film 509 Island-like semiconductor film 510 Island-like semiconductor film 511 Insulating film 512 Conductive film 513 Conductive film 514 Gate insulating film 515 Gate electrode 515a Lower gate electrode 515b Upper gate electrode 516 Gate electrode 516a Lower gate electrode 516b Upper gate electrode 517 Gate electrode 517a Lower gate electrode 517b Upper gate electrode 518 Gate electrode 518a Lower gate electrode 518b Upper gate electrode 519 Gate electrode 519a Lower gate Electrode 519b Upper gate electrode 521 Source region or drain region 522 Channel formation region 523 Source region or drain region 524 Low concentration impurity region 525 Channel formation region 526 Source region A drain region 527 the low concentration impurity regions 528 channel forming region 529 source region and a drain region 530 the low concentration impurity regions 531 channel forming region 532 source region or drain region 533 source and drain regions 534 a channel forming region 541 TFT
542 TFT
543 TFT
544 TFT
544R pixel TFT
544G pixel TFT
544B pixel TFT
551 insulating film 552 insulating film 553 transparent conductive film 554 pixel electrode 554R pixel electrode 554G pixel electrode 554B pixel electrode 555 conductive film 556 conductive film 561 electrode 561a electrode 561b electrode 562 electrode 562a electrode 562b electrode 563 electrode 563a electrode 563b electrode 564 electrode 564 564b Electrode 565a Electrode 565a Electrode 565b Electrode 566 Electrode 566a Electrode 566b Electrode 567 Electrode 567a Electrode 567b Electrode 571 CMOS circuit 581 Insulator 582 Organic compound layer 583 Electrode 584 Light emitting element 585 Transparent protective layer 591 Substrate 592 Region 593 Drive circuit 595 Driving circuit 596 Pixel portion 597 Optical film 598 Optical film 601 Hole injection layer 601R Hole injection layer 601G Hole injection layer 601B Hole injection layer 602 Hole transport 602R hole transport layer 602G hole transport layer 602B hole transport layer 603 light emitting layer 603R light emitting layer 603G light emitting layer 603B light emitting layer 604 electron transport layer 604R electron transport layer 604G electron transport layer 604B electron transport layer 605 electron injection layer 605R electron injection Layer 605G Electron injection layer 605B Electron injection layer 1051a Partition wall 1051b Partition wall 1052 Opening

Claims (6)

Forming a first electrode on the substrate;
Forming an insulating layer containing a thermoplastic resin material or a thermosetting resin material on the substrate and the first electrode;
Pressing the mold against the insulating layer, forming an opening in the insulating layer on the first electrode;
The mold is removed from the insulating layer in which the opening is formed,
After removing the mold, the insulating layer formed with the opening is cured to form a partition,
Forming a light emitting layer on the first electrode and the partition;
A method for manufacturing a semiconductor device, wherein a second electrode is formed over the light-emitting layer. In claim 1,
The method for manufacturing a semiconductor device, wherein the insulating layer is cured by heating. Forming a first electrode on the substrate;
Forming an insulating layer containing a photocurable resin material on the substrate and the first electrode;
Pressing the mold against the insulating layer, forming an opening in the insulating layer on the first electrode;
The mold is removed from the insulating layer in which the opening is formed,
After removing the mold, the insulating layer formed with the opening is cured to form a partition,
Forming a light emitting layer on the first electrode and the partition;
A method for manufacturing a semiconductor device, wherein a second electrode is formed over the light-emitting layer. In claim 3,
The method for manufacturing a semiconductor device, wherein the insulating layer is cured by light irradiation. In any one of Claims 1 thru | or 4,
The mold is formed of a metal material or an insulating material,
A method for manufacturing a semiconductor device, wherein the surface of the mold has irregularities. In any one of Claims 1 thru | or 5,
The method for manufacturing a semiconductor device, characterized in that the partition wall has a cross-sectional taper angle of 20 ° to 50 ° and has a shape in which the bottom and top edges of the partition have curved surfaces.

Images