JP2007527538A5 - - Google Patents

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Publication number
JP2007527538A5
JP2007527538A5 JP2007502074A JP2007502074A JP2007527538A5 JP 2007527538 A5 JP2007527538 A5 JP 2007527538A5 JP 2007502074 A JP2007502074 A JP 2007502074A JP 2007502074 A JP2007502074 A JP 2007502074A JP 2007527538 A5 JP2007527538 A5 JP 2007527538A5
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JP
Japan
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pat
coating
laser
pulse
compressible
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JP2007502074A
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JP2007527538A (ja
JP4700680B2 (ja
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Priority claimed from PCT/US2005/007304 external-priority patent/WO2005084393A2/en
Publication of JP2007527538A publication Critical patent/JP2007527538A/ja
Publication of JP2007527538A5 publication Critical patent/JP2007527538A5/ja
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これらの目的は、当技術分野で一般に使用されているレーザー剥離技術のような架橋測定ツールを使用することで現在のところ実現されている。典型的には、高エネルギーレーザーパルスは閉じこめプレート（ｃｏｎｆｉｎｉｎｇ ｐｌａｔｅ）、金属層、基板プレート及びコーティングの組み合わせが面状に配列したものに作用する。レーザーパルスは、基板背面の関心部分とレーザー波長に対して透明な溶融石英閉じこめプレートで挟まれている厚い金属膜に作用する。通常は金又はアルミニウムがレーザー吸収膜として使用される。閉じこめられた金にレーザーエネルギーが吸収されることで膜が突然膨張する。膜は集合体の軸の制約のため、テストコーティング界面に向かって圧縮性衝撃波を発生させる。圧縮性パルスは界面に衝撃を与えるので、その一部はコーティングへ透過する。この圧縮性パルスのコーティングの自由表面からの反射であって、十分大きな振幅が与えられれば引っ張りパルスとなってコーティングを剥離する。
米国特許第５，４３８，４０２号明細書 米国特許第６，３２７，０３０号明細書 米国特許第５，９２０，０１７号明細書 米国特許第４，３５３，６４９号明細書 米国特許第５，１９９，３０４号明細書 米国特許第６，２１９，１３９号明細書
JP2007502074A 2004-03-05 2005-03-07 超薄膜を分離するガラスによって調節された応力波及びナノエレクトロニクス素子の作製 Expired - Fee Related JP4700680B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US55080304P 2004-03-05 2004-03-05
US60/550,803 2004-03-05
PCT/US2005/007304 WO2005084393A2 (en) 2004-03-05 2005-03-07 Glass-modified stress waves for separation of ultra thin films and nanoelectronics device fabrication

Publications (3)

Publication Number Publication Date
JP2007527538A JP2007527538A (ja) 2007-09-27
JP2007527538A5 true JP2007527538A5 (ja) 2008-05-29
JP4700680B2 JP4700680B2 (ja) 2011-06-15

Family

ID=34919577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007502074A Expired - Fee Related JP4700680B2 (ja) 2004-03-05 2005-03-07 超薄膜を分離するガラスによって調節された応力波及びナノエレクトロニクス素子の作製

Country Status (6)

Country Link
US (1) US7487684B2 (ja)
EP (1) EP1723401A4 (ja)
JP (1) JP4700680B2 (ja)
KR (1) KR101026956B1 (ja)
CN (1) CN100554905C (ja)
WO (1) WO2005084393A2 (ja)

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Publication number Priority date Publication date Assignee Title
FR2935536B1 (fr) * 2008-09-02 2010-09-24 Soitec Silicon On Insulator Procede de detourage progressif
EP2200077B1 (en) * 2008-12-22 2012-12-05 Soitec Method for bonding two substrates
US20100310775A1 (en) * 2009-06-09 2010-12-09 International Business Machines Corporation Spalling for a Semiconductor Substrate
US20110048517A1 (en) * 2009-06-09 2011-03-03 International Business Machines Corporation Multijunction Photovoltaic Cell Fabrication
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US8703521B2 (en) * 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US8633097B2 (en) 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
FR2961630B1 (fr) 2010-06-22 2013-03-29 Soitec Silicon On Insulator Technologies Appareil de fabrication de dispositifs semi-conducteurs
US8338266B2 (en) 2010-08-11 2012-12-25 Soitec Method for molecular adhesion bonding at low pressure
FR2964193A1 (fr) * 2010-08-24 2012-03-02 Soitec Silicon On Insulator Procede de mesure d'une energie d'adhesion, et substrats associes
US11590609B2 (en) * 2012-01-18 2023-02-28 Purdue Research Foundation Laser shock peening apparatuses and methods
US8714016B2 (en) * 2012-02-01 2014-05-06 The Boeing Company Tension wave generation system
US8709957B2 (en) * 2012-05-25 2014-04-29 International Business Machines Corporation Spalling utilizing stressor layer portions
GB2509985A (en) * 2013-01-22 2014-07-23 M Solv Ltd Method of forming patterns on coatings on opposite sides of a transparent substrate
US9618433B2 (en) * 2014-06-05 2017-04-11 The Boeing Company Method for controlling tensile stress during evaluation of a bond between structures
US10632534B2 (en) * 2015-02-26 2020-04-28 Purdue Research Foundation Processes for producing and treating thin-films composed of nanomaterials
US9784668B2 (en) 2015-05-29 2017-10-10 The Boeing Company Systems and methods for testing internal bonds
CN109721026B (zh) * 2017-10-27 2020-01-07 湖北工业大学 一种激光脉冲辅助制备复合金属纳米颗粒阵列的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
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EP0023577B1 (en) * 1979-07-06 1985-11-21 Kabushiki Kaisha Toshiba Surface stress measurement
US4722600A (en) * 1986-10-14 1988-02-02 Chiang Fu Pen Apparatus and method for measuring strain
US5199304A (en) * 1992-02-20 1993-04-06 Duffers Scientific, Inc. Apparatus for optically measuring specimen deformation during material testing
US5438402A (en) * 1993-03-05 1995-08-01 Trustees Of Dartmouth College System and method for measuring the interface tensile strength of planar interfaces
US5748318A (en) * 1996-01-23 1998-05-05 Brown University Research Foundation Optical stress generator and detector
US6055053A (en) * 1997-06-02 2000-04-25 Stress Photonics, Inc. Full field photoelastic stress analysis
US5920017A (en) * 1997-10-30 1999-07-06 Westinghouse Savannah River Company Thermal input control and enhancement for laser based residual stress measurements using liquid temperature indicating coatings
US6327030B1 (en) * 1999-08-06 2001-12-04 University Of Florida System, method, and coating for strain analysis
JP4215914B2 (ja) * 1999-12-02 2009-01-28 三菱重工業株式会社 結合力測定方法及び装置
TW399143B (en) * 1999-12-20 2000-07-21 Prec Instr Devl Ctr Nsc Execut A method for measuring thermal expansion coefficient of films by using an Interference-phase-shifting technique

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