JP2007504582A - 基板及びそれから製造されたデータ記憶媒体 - Google Patents
基板及びそれから製造されたデータ記憶媒体 Download PDFInfo
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- JP2007504582A JP2007504582A JP2006524837A JP2006524837A JP2007504582A JP 2007504582 A JP2007504582 A JP 2007504582A JP 2006524837 A JP2006524837 A JP 2006524837A JP 2006524837 A JP2006524837 A JP 2006524837A JP 2007504582 A JP2007504582 A JP 2007504582A
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Images
Classifications
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
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- G—PHYSICS
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Abstract
【選択図】 なし
Description
以下の実施例のディスク基板は、Sumitomo Heavy Industries、Ltd.のSD30 Injection Molding MachineとSiekoh Giken Type J CD金型を用いてポリマー性材料を射出成形することによって調製した。この金型は特定の幾何学的形状のグルーブの特徴を有する「スタンパー」を含んでいる。典型的なポリマーメルト「ショット」サイズは材料約20グラムであった。成形されたディスク基板の一つの表面は金型表面に由来する「ネガ」パターンのグルーブを有していた。成形された基板のパターン化された表面を「スパッタリング」プロセスによってアルミニウムで0.05〜0.10マイクロメートルの標準厚さに金属化した。Record Products of America製のnittoテープアプリケーターを用いて、基板の金属化された部分に感圧接着剤層(厚さ約25マイクロメートル)を付けた後光学層(厚さ約75マイクロメートル)を付けた。このスタックをCarverラミネータープレス内で60℃、80ポンド/平方インチ(psi、5.6kgf/cm2)で5分間プレスして層同士を完全に結合することによってデータディスクアセンブリを完成させた。
データディスクアセンブリに対して湿度衝撃試験を実施して高湿度環境下での寸法安定性を検討した。ディスクアセンブリのラジアルチルトは、アセンブリ層のいずれか又は全てにおける水の吸収又は脱着によって影響され得る。ポリマー性層が湿気を吸収して変化した環境と平衡に達する際、ディスクは含まれている材料及び系の非対称性に起因して反りを示し得る。比較例1及び実施例1〜2では、ディスクアセンブリのラジアルチルトを、時間0において、25℃、50%相対湿度の環境〜25℃〜90%相対湿度の環境で測定した。ラジアルチルトは、ディスク半径の関数として(55ミリメートルの半径で測定)半径方向の偏り又はラジアルチルトの二倍を測定するDr.Schenk PrometeusモデルMT−136Eアナライザーを用い、赤色レーザーを使用しディスクがCD−Rフォーマットモデルを有するとして測定した。
ビスフェノール−Aポリカーボネート樹脂(OQ1050、GE Plasticsから入手可能な光学品質ポリカーボネート)から作成した1.1ミリメートル(mm)の厚さの基板上に、薄いアルミニウム反射データ層をスパッタリングした後、ビスフェノール−Aポリカーボネート(BPA−PC)から作成した75マイクロメートルの厚さの光学層を光学品質の感圧接着剤により接合することによってデータディスクアセンブリを調製した。このディスクアセンブリを湿度衝撃試験にかけ、ディスクのチルトを時間の関数として測定した。この湿度衝撃試験の結果を図2に示す。
50重量%(wt%)の0.33固有粘度(IV、クロロホルム中25℃で測定)のポリ(2,6−ジメチル−1,4−フェニレンエーテル)(PPE)と、50wt%の270000amuの重量平均分子量(Mw)を有する結晶ポリスチレン(xPS)(L3450グレード、Chevron Phillips Chemicalから入手可能)とのブレンドから調製された基板、及び1,3−ビス(4−ヒドロキシフェニル)メンタンポリカーボネート(BHPM−PC)から調製された光学フィルム層からデータディスクアセンブリを作成した。使用したPPE/xPSブレンドは、後記実施例9〜12の手順に従って溶融ろ過した。このアセンブリ中の層の厚さは比較例1と同じであった。このディスクアセンブリを湿度衝撃試験にかけた。結果を図3に示す。
この実施例では、基板は実施例1と同じ材料から調製したが、光学フィルム層はビスフェノール−Aポリカーボネート(BPA−PC)から調製した。ここでも、層は比較例1と同じ厚さであった。図4に、実施例2の湿度衝撃試験の結果を示す。
PPEとxPSの各種ブレンドから調製された基板を有するデータディスクアセンブリを作成して基板の寸法安定性に対する分子量とブレンド組成の効果を例証した。4つの異なる配合のPPE/xPSブレンドを調製し、上記成形条件を用いてディスク基板に射出成形した。配合は表1に挙げてある。これらの配合では2つのPPEと2つのxPSで変化させた。すなわち、0.33IV及び0.46IVのポリ(2,6−ジメチルフェニレンエーテル)と、Chevron Phillips Chemicalから入手可能な270000amuの重量平均分子量を有するL3450グレードのポリスチレン(高MW xPS)及びNovacorから入手可能な214000amuの重量平均分子量Mwを有するL3050グレードのポリスチレン(低MW xPS)であった。実施例3のデータディスクアセンブリは全てBHPM−PC光学フィルム層を含有していた。
既に述べた通り、80℃におけるラジアルチルトの変化は主として射出成形された基板中の応力の緩和により引き起こされると考えられる。基板は80℃のような高温で緩和され容積が変化するが、アセンブリの他の層、例えば金属、接着剤、及び光学層は変化しないか又は異なる速度で変化する。収縮及び応力緩和は、ある所与の組成のPPE−PSの場合ディスクを成形する際の条件を変化させることによって著しい影響を受け得ることが判明している。図6に、80℃の環境に曝露した後に金属化されてない射出成形ディスク基板に対して行った収縮の測定によってこの現象を示す。この実施例では単一の配合を使用した。すなわち、50wt%の0.33ivポリ(2,6−ジメチルフェニレンエーテル)及び50wt%のChevron Phillips Chemicalから入手可能な重量平均分子量270000の結晶ポリスチレンであった。ディスク基板を調製するのに使用した成形条件はメルト温度(メルト)、金型温度(金型)、及び形締トン数(形締トン)であった。BPA−PCから作成した比較例の基板も挙げてある。図6に示されているように、成形条件を変えると、高温条件下である範囲の寸法安定性を有する基板が得られた。
熱老化曝露の後のディスクアセンブリの反りに対する成形条件の効果をこの実施例で例証する。これらのアセンブリのディスク基板は全て、50wt%の0.33ivポリ(2,6−ジメチルフェニレンエーテル)と50wt%のChevron Phillips Chemicalから入手可能な重量平均分子量270000の結晶ポリスチレンとのブレンドから調製した。ディスクを表3にまとめて示す様々な成形条件下で成形した。17の製造試験を行ってディスク基板を製造した。メルト温度と金型温度はセ氏(℃)で、形締トン数はトンで、保持圧力はキログラム重/平方センチメートル(kgf/cm2)で、冷却時間は秒で示す。
実施例6
50wt%の0.33ivポリ(2,6−ジメチルフェニレンエーテル)と50wt%の重量平均分子量270000の結晶ポリスチレンとからなるブレンドを基板材料として使用した。基板の表面上の金型「スタンパー」特徴を測定してパーセント複製率を得た。このパーセント複製率は、原子間力顕微鏡を用いてディスクの特徴のグルーブ深さを測定し、その数を対応する金型スタンパーパターンの特徴の測定値で割り、100を掛けることによって決定された。パーセント複製率のデータを平均値として表4に示す。
表5に、40wt%の0.33IVポリ(2,6−ジメチルフェニレンエーテル)と、60wt%のChevron Phillips Chemicalから入手可能な重量平均分子量270000amuのL3450グレード結晶ポリスチレンとの樹脂ブレンドから調製されたディスクに対するグルーブ複製率の結果をまとめて示す。金型の可動側(MS)の温度をセ氏で測定した。金型温度オフセットは固定側と可動側の温度差である。射出速度は毎秒ミリメートル(mm/s)の単位である。ここでも、優れた複製率(>90%)は高めの金型温度及び高めのメルト温度で観察された。
1つの実施例(実施例8)と1つの比較例(比較例2)は、ポリフェニレンエーテル−ポリスチレン樹脂ブレンドの溶液のろ過が得られる単離された材料の微粒子状不純物の量に及ぼす効果を立証するために調製した。
ポリフェニレンエーテル(PPE、0.33IVのPPE粉末、GE Plasticsから入手可能)とポリスチレン(xPS、L3050)の重量で40/60のブレンドを以下の手順に従って調製した。予熱した(約125℃)窒素雰囲気下撹拌量の試薬級オルト−ジクロロベンゼン(ODCB)に、72.6キログラム(kg)のPPE粉末と108.9kgのxPSを加えて20重量%の固形分を含有する溶液を形成した。この溶液を約170℃に加熱し、5マイクロメートルサイズのフィルターバッグに通して重力ろ過下。
PPE−xPS溶液をフィルターバッグに通した重力ろ過により一度だけろ過したことである。さらに、溶液は単離のために使用した押出機に入れる前に過熱しなかった。10重量%固形分の溶液を形成するのに充分なODCB中で12.1kgの0.33IVのPPE粉末と18.1kgのL3050グレードxPSを混合することによってPPE−xPSの溶液を調製した。得られた溶液を約170℃に加熱し、5マイクロメートルサイズのフィルターバッグに通して重力ろ過した。ろ液を蒸留によるODCBの除去によって約40重量%固形分の溶液に濃縮した。
5つの試料を採り、平均し、最終粒子サイズ数を得た。実施例8及び比較例例2のABS2アナライザー微粒子分析の結果を示す。
ポリフェニレンエーテル(PPE、粉末、0.33IV、GE Plasticsから入手可能)とポリスチレン(xPS、Novacor 2272、Mw214000、Mn71600、Mw/Mn2.99、Nova Chemicalから入手可能)の40/60重量%ブレンドを真空ベント付き40ミリメートル(mm)コンパウンダーでコンパウンディングした。ベントを通して約20インチ水銀(508ミリメートルHg)の真空にした。このコンパウンディングした材料を、3つのバレル(ゾーン)を備えた単軸式押出機に供給した。この押出機には、押出機ダイヘッドに位置する燒結金属フィルター(PALL、3マイクロメートルのポア、キャンドル形状)を備えていた。
押し出されたメルトのバッチを収集した。押出機の加工処理条件を表8に示す。
Claims (10)
- ポリ(アリーレンエーテル)樹脂及びポリ(アルケニル芳香族)樹脂のブレンドを含む基板層を含んでなるデータ記憶媒体であって、前記基板層がランド及びグルーブを含む表面を含んでおり、前記ランド及びグルーブが約0.05〜約0.7マイクロメートルのピッチを有する、前記データ記憶媒体。
- 基板層が約0.2〜約2.5ミリメートルの厚さを有しており、ランドが約10〜約200ナノメートルの幅及び約10〜約100ナノメートルの高さを有しており、グルーブが約10〜約200ナノメートルの幅及び約10〜約100ナノメートルの高さを有する、請求項1記載のデータ記憶媒体。
- 基板層が約90パーセント以上のランド及びグルーブ複製率を有する、請求項1記載のデータ記憶媒体。
- ブレンドが目に見える微粒子不純物を実質的に含まない、請求項1記載のデータ記憶媒体。
- さらに基板上に配置されたデータ層を含んでおり、データ層のデータが、約700ナノメートル未満の波長及び約0.6以上の開口数レンズを有するレーザーを用いて読み出すことができる、請求項1記載のデータ記憶媒体。
- さらにデータ層上で基板層と反対側に配置された光学層を含んでおり、光学層がポリカーボネート又はシリコーンハードコートからなる、請求項5記載のデータ記憶媒体。
- データ記憶媒体が、80℃で96時間後55ミリメートルの半径で0.5度以下のラジアルチルト変化値を示す、請求項6記載のデータ記憶媒体。
- 重量比約40:60〜約60:40のポリ(アリーレンエーテル)樹脂及びポリスチレン樹脂のブレンドを含んでなる基板層と、
基板層上に配置されたデータ層と、
データ層上で基板と反対側に配置された光学層と
を含んでなるデータ記憶媒体であって、前記光学層は1,3−ビス(4−ヒドロキシフェニル)メンタンポリカーボネート又はビスフェノール−Aポリカーボネートを含んでなり、
当該データ記憶媒体は80℃で96時間後55ミリメートルの半径で0.35度以下のラジアルチルト変化値を示す、前記データ記憶媒体。 - データ層のデータが、約410nm未満の波長及び約0.8より大きいレンズ開口数を有するレーザーを用いて読み出すことができ、データ記憶媒体が約22ギガバイトより大きい記録容量及び毎秒約35メガバイトより大きい転送速度を有する、請求項8記載のデータ記憶媒体。
- ポリ(アリーレンエーテル)樹脂及びポリ(アルケニル芳香族)樹脂のブレンドを含んでなる基板層と、
基板層を覆って配置されたデータ層と、
データ層を覆って基板層と反対側に配置された光学層と
を含んでなるデータ記憶媒体であって、
基板層がランド及びグルーブを含む表面を含んでおり、
ランド及びグルーブが約0.275〜約0.35マイクロメートルのピッチを含んでおり、
データ層が相変化型カルコゲナイド合金を含んでなり、データ層のデータが、約410nm未満の波長及び約0.8より大きいレンズ開口数を有するレーザーを用いて読み出すことができ、
光学層が約0.050〜約0.125mmの厚さであり、
データ記憶媒体が約25ギガバイトより大きい記録容量及び毎秒約35メガバイトより大きい転送速度を有する、前記データ記憶媒体。
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US10/648,609 US20050048252A1 (en) | 2003-08-26 | 2003-08-26 | Substrate and storage media for data prepared therefrom |
PCT/US2004/027696 WO2005021651A1 (en) | 2003-08-26 | 2004-08-25 | Substrate and storage media for data prepared therefrom |
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JP2007504582A true JP2007504582A (ja) | 2007-03-01 |
Family
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JP2006524837A Pending JP2007504582A (ja) | 2003-08-26 | 2004-08-25 | 基板及びそれから製造されたデータ記憶媒体 |
Country Status (7)
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US (1) | US20050048252A1 (ja) |
EP (1) | EP1660582A1 (ja) |
JP (1) | JP2007504582A (ja) |
KR (1) | KR20060064057A (ja) |
CN (1) | CN1871303A (ja) |
SG (1) | SG145766A1 (ja) |
WO (1) | WO2005021651A1 (ja) |
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2003
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-
2004
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- 2004-08-25 JP JP2006524837A patent/JP2007504582A/ja active Pending
- 2004-08-25 EP EP04786579A patent/EP1660582A1/en not_active Withdrawn
- 2004-08-25 CN CNA2004800316009A patent/CN1871303A/zh active Pending
- 2004-08-25 KR KR1020067003899A patent/KR20060064057A/ko not_active Application Discontinuation
- 2004-08-25 WO PCT/US2004/027696 patent/WO2005021651A1/en active Application Filing
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SG145766A1 (en) | 2008-09-29 |
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CN1871303A (zh) | 2006-11-29 |
EP1660582A1 (en) | 2006-05-31 |
US20050048252A1 (en) | 2005-03-03 |
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