JP2007335507A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To ensure reliability for a structure which is used for sealing up a semiconductor device in accordance with miniaturization. <P>SOLUTION: The semiconductor device 10 has a configuration that a semiconductor device 12 formed of a photoelectric conversion element is mounted on a substrate 11, and a sealing structure 21 used for sealing the semiconductor device 12 is installed on the substrate 11. The sealing structure 21 is composed of a structure main body 22 and a light condensing means 23. The structure main body 22 is equipped with a stage member 22C formed on the outer peripheral side of a lens mounting unit 22A, and a thick-walled member 22D extending in the direction of a Z axis is provided below the stage member 22C. One end 25a of a venthole 25 is opened at the stage member 22C, and the other end 25b is opened at the lower surface of the thick-walled member 22D. The venthole 25 is formed as long as L1 in the direction of a Z axis and increased in internal capacity, and an adhesive agent capable of filling the inside of the venthole 25 is increased in amount. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a semiconductor element is formed on a substrate, and more particularly to a semiconductor device having a structure in which the semiconductor element is sealed with a sealing structure and a method for manufacturing the semiconductor device.

  In recent years, the rapid progress and development of information communication technology has led to an increase in data communication speed and an increase in data communication volume. For mobile electronic devices such as mobile phones and laptop computers, CCD (charge coupled device) image sensors and A device incorporating a semiconductor device (imaging device) such as a CMOS image sensor has become widespread. These mobile devices can transmit and receive image data captured by the above-described imaging device in addition to character data.

  An example of a structure of a semiconductor device (imaging device) used for the mobile device is shown in FIG.

  Referring to FIG. 1, an outline of a semiconductor device (imaging device) 100 shown in FIG. 1 is that a semiconductor element 102 made of a photoelectric conversion element such as a CCD image sensor or a CMOS image sensor is installed on a substrate 101. A sealing structure 201 for sealing the semiconductor element 102 is provided on the substrate 101.

  The sealing structure 201 includes, for example, a structure main body 202 having a structure in which substantially cylindrical shapes having different diameters are connected, and a light condensing unit such as a lens installed so as to close the opening of the structure main body 202. It is comprised from the means 203.

  The structure body 202 is installed so that the opening on the side opposite to the side where the light condensing means 203 is installed is in contact with the substrate 101. The structure body 202 and the substrate 101 are bonded with a thermosetting adhesive 104 to seal the internal space 103 including the semiconductor element 102 on the substrate 101. For this reason, the internal space 103 is isolated from the outside air, and prevents incident light incident on the semiconductor element from being blocked by, for example, dust adhering to the semiconductor element 102.

  After the adhesive 104 is applied, the adhesive 104 applied to the inside and the outside of the structure body 202 is cured by heating to bond the structure body 202 onto the substrate 101. At that time, in the heat treatment (curing treatment), in order to prevent the pressure in the internal space 103 from rising, a vent hole 204 for discharging the gas in the internal space 103 to the outside is provided in the step portion 202A of the structure body 202. Has penetrated. Therefore, during the heat treatment, the gas in the internal space 103 is discharged from the vent hole 204 to the outside due to the pressure difference between the inside and outside of the internal space 103 due to the temperature rise, and the pressure rise in the internal space 103 is prevented.

The air holes 204 are closed by dropping an ultraviolet curable adhesive after the heat treatment is completed, and then irradiating the ultraviolet rays to cure the adhesive.
JP-A-2005-39152

  However, in the semiconductor device 100 described above, as a work for closing the vent hole 204, a method of pouring and closing the ultraviolet curable adhesive into the vent hole 204 is performed. Due to the miniaturization of 202, the inner diameter of the vent hole 204 tends to be reduced. On the other hand, since the supply amount of the adhesive is dropped into the vent hole 204 one by one from the dispenser that supplies the adhesive, it is difficult to reduce it in proportion to the inner diameter of the vent hole 204.

  Therefore, conventionally, when an adhesive is dropped onto the vent hole 204, a part of the adhesive overflows from the vent hole 204 to the stepped portion 202 </ b> A, causing a problem that the adhesive protrudes to the outer wall surface of the structure body 202. It was.

  Further, when the adhesive overflowing from the vent hole 204 is hardened in a state of protruding from the stepped portion 202A, for example, when the stepped portion 202A is brought into contact with an alignment surface such as a case in which the semiconductor device 100 is incorporated, the stepped portion 202A. May float from the alignment surface, and assembly accuracy may be reduced.

  In addition, since the structure main body 202 also functions as an electromagnetic shield of the semiconductor element 102, the structure main body 202 is preferably grounded. For example, when the structure main body 202 is grounded through the outer wall surface of the structure main body 202, if an adhesive made of an insulating resin adheres to the outer wall surface, In some cases, there was a problem with the reliability of the correct connection. For this reason, there is a concern that the grounding becomes insufficient, the electromagnetic shielding effect cannot be obtained, and the influence of noise occurs on the semiconductor element.

  In view of the above, the present invention has a general object to provide a new and useful semiconductor device and a method for manufacturing the semiconductor device, which solve the above problems.

  A specific problem of the present invention is a semiconductor device having a structure in which a semiconductor element is sealed on a substrate, the structure for sealing the semiconductor element has good reliability, and the reliability of electrical connection The present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device that are high in cost.

  In a first aspect of the present invention, the above-described problems are solved by a substrate on which a semiconductor element is installed, a sealing structure bonded to the substrate with an adhesive so as to cover the semiconductor element, and the sealing structure A vent hole provided in the sealing device, wherein one end of the vent hole is opened outside the sealing structure, and the other end of the vent hole is opened near the substrate. The problem is solved by a semiconductor device characterized by extending inside the stop structure.

  As for the said vent hole, it is desirable to make the opening of the said one end larger than the opening of the said other end.

  The vent is preferably formed in a tapered shape so that the inner diameter of the one end is larger than the inner diameter of the other end.

  It is desirable that the vent holes communicate holes having different inner diameters so that the opening at the one end has a larger diameter than the opening at the other end.

  The vent is preferably formed in a tapered shape in which the opening at the one end is enlarged, and the opening at the other end is formed to have a smaller diameter than the one end.

  In addition, when the semiconductor element is a photoelectric conversion element, it is possible to provide a semiconductor device in which the reliability of the structure for sealing the photoelectric conversion element is high and the reliability of electrical connection is high.

  In addition, since the sealing structure includes a light collecting unit for collecting incident light on the semiconductor element, it is possible to provide a semiconductor device having an imaging function with high reliability of electrical connection. It becomes.

  Further, when the structure body includes a conductive material, the structure body functions as an electromagnetic shield for the semiconductor element.

  In the second aspect of the present invention, the above-described problem is solved by a step of installing a semiconductor element on a substrate, a vent hole formed in a sealing structure for sealing the semiconductor element, and one end of the vent hole. Opening the outside of the sealing structure, and forming the other end of the vent hole in the vicinity of the substrate inside the sealing structure; and an edge of the sealing structure with an adhesive The step of bonding onto the substrate and the adhesive are heated and cured, and the gas in the internal space formed inside the sealing structure is discharged from the vent hole provided in the sealing structure. The problem is solved by a method of manufacturing a semiconductor device comprising: a step; and a step of dripping an adhesive into one end opening of the vent hole to close the vent hole.

  In addition, when the semiconductor element is a photoelectric conversion element, it is possible to provide a semiconductor device in which the reliability of the structure for sealing the photoelectric conversion element is favorable and the electrical connection is highly reliable. The stop structure has a light collecting means for supplying incident light to the photoelectric conversion element, whereby a method for manufacturing a semiconductor device having an imaging function with high reliability of electrical connection can be provided. .

  According to the present invention, the adhesive is formed by extending one end of the vent hole to the outside of the sealing structure and extending the other end of the vent hole to the inside of the sealing structure so as to open near the substrate. Can be prevented from overflowing from the stepped portion and the outside of the sealing structure body when the ventilation hole is closed even if the diameter of the ventilation hole is reduced by downsizing of the semiconductor device. It is possible to prevent an adhesive having an insulating property from adhering to the outside of the semiconductor device, and thus to provide a semiconductor device in which the reliability of the structure for sealing the semiconductor element is high and the reliability of electrical connection is high. It becomes possible.

  Next, embodiments of the present invention will be described below with reference to the drawings.

  FIG. 2 is a cross-sectional view schematically showing the semiconductor device 10 according to the first embodiment of the present invention. Referring to FIG. 2, the outline of the semiconductor device 10 according to the present embodiment is that a semiconductor element 12 made of a photoelectric conversion element such as a CCD image sensor or a CMOS image sensor is mounted on a substrate 11. A sealing structure 21 to be sealed is installed on the substrate 11.

  The sealing structure 21 includes, for example, a structure main body 22 having a cap-like structure to which substantially cylindrical shapes having different diameters are connected, and light collecting means 23 provided on the lens mounting portion 22A of the structure main body 22. It is configured.

  The condensing means 23 has a structure including a lens portion 23A and an attachment portion 23B, and a screw portion is formed on the attachment portion 23B. Moreover, the internal thread part corresponding to the external thread part of the attachment part 23B is formed in the inner wall surface of the structure main body 22 which the attachment part 23B contacts. For this reason, it is set as the structure which can adjust the distance f of the condensing means 23 and the semiconductor element 12 by rotating the condensing means 23. FIG. Therefore, the condensing means 23 can adjust the focal distance with respect to the semiconductor element 12 which is a photoelectric conversion element.

  An IR cut glass 24 that absorbs or reflects infrared rays and blocks the infrared region of incident light is attached below the light condensing means 23.

  The structure body 22 is installed so that the lower peripheral edge portion 22B opposite to the lens attachment portion 22A is in contact with the substrate 11. The lower peripheral edge 22B of the structure body 22 and the substrate 11 are bonded with an adhesive 14 to seal the internal space 13 including the semiconductor element 12 on the substrate 11. For this reason, the internal space 13 is isolated from the outside air, and prevents incident light incident on the semiconductor element from being blocked by, for example, dust adhering to the semiconductor element 12.

  Furthermore, the structure body 22 has a step portion 22C formed on the outer peripheral side of the lens mounting portion 22A, and a vent hole 25 extending in the Z-axis direction passes through the step portion 22C. A thick portion 22D in the Z-axis direction is formed below the step portion 22C. The vent hole 25 has one end 25a opened to the step portion 22C and the other end 25b opened to the lower surface of the thick portion 22D, and extends inside the sealing structure 22 so as to open near the substrate 11. Is formed.

  The Z-axis direction dimension L1 of the thick part 22D is longer (thicker) than the Z-axis direction dimension L2 (conventional length) of the other stepped part 22C (L1> L2). Therefore, the vent hole 25 is also formed with a length of the Z-axis direction dimension L1, and the internal volume of the vent hole 25 is increased. In this embodiment, since the Z-axis direction dimension L1 is set to be twice or more the Z-axis direction dimension L2, the injection amount of the adhesive that can be injected into the vent hole 25 is also twice or more.

  The air vent 25 prevents the pressure in the internal space 13 from rising by discharging the gas in the internal space 13 to the outside when the adhesive 14 is cured by heating. When the heat treatment is completed and the adhesive 14 is cured, an ultraviolet curable adhesive is dropped into the vent hole 25 to close it.

  FIG. 3 is a longitudinal sectional view showing a state in which the vent hole 25 is closed. As shown in FIG. 3, after the structure body 22 is bonded onto the substrate 11, an ultraviolet curable adhesive 26 (shown with a satin pattern) is injected into the vent hole 25. One drop of the adhesive 26 is dropped from the tip end of a nozzle (not shown) of a dispenser that supplies the adhesive. The semiconductor device 10 is miniaturized, and the hole diameter of the vent hole 25 is also small (for example, inner diameter = about 200 μm), and the adhesive 26 may overflow from the vent hole 25 when one or more drops are dropped. There is. However, in this embodiment, since the entire length of the vent hole 25 in the Z-axis direction is extended to the dimension L1, the amount of adhesive 26 that can be accommodated increases as the entire internal volume of the vent hole 25 increases. Therefore, the adhesive 26 is prevented from overflowing from the vent hole 25.

  For this reason, the adhesive 14 does not protrude from the outer wall surface of the structure body 22, and the outer wall surface is not covered with the adhesive. Further, in the semiconductor device according to the present embodiment, since the adhesive 26 does not overflow from the vent hole 25, the alignment when the stepped portion 22C is brought into contact with the alignment surface can be performed accurately. Further, not only the outer wall surface of the structure body 22 is prevented from being soiled, but also the semiconductor device can be mounted at a high density. For example, since the protruding adhesive can be prevented from interfering with other electronic components and the like, it is possible to install the semiconductor device 10 on a motherboard or the like with high density.

  The structure body 22 is formed by adding a conductive material (Ni and carbon particles) to, for example, polycarbonate resin and injection molding. For this reason, the structure main body 22 has a function of electromagnetic shielding of the semiconductor element 12 and suppresses the semiconductor element 12 from being affected by noise. Moreover, since it is formed by injection molding, it is possible to cope with fine processing such as a threaded portion.

  Moreover, in order to make said electromagnetic shielding function favorable, it is preferable that the structure main body 22 is earth | grounded. In the semiconductor device 10 according to the present embodiment, since the protrusion of the adhesive on the outer wall surface of the structure body 22 is suppressed, the electrical circuit of the ground circuit when the structure body 22 is grounded using the outer wall surface. Connection reliability is improved. Therefore, it is possible to obtain a sufficient electromagnetic shielding effect, and it is possible to configure a highly reliable semiconductor device by eliminating the influence of noise on the semiconductor element.

  Further, in order to further reduce the electrical resistance value of the surface of the structure body 22, a conductive thin film (for example, an Al film) made of a metal material is formed on the surface of the structure body by a method such as sputtering. More preferably.

  For example, FIG. 4 is a diagram schematically showing an example of a structure in which the semiconductor device 10 is mounted. However, in the figure, the same reference numerals are given to the parts described above, and the description will be omitted.

  Referring to FIG. 4, the semiconductor device 10 is installed in the mother boat 40 through the holding container 31 so as to be housed in, for example, a metal holding container (socket) 31. The holding container 31 has a grounding portion 31 </ b> A that holds the semiconductor device 10 so as to be held by the elastic force of metal. The grounding portion 31 </ b> A holds the structure main body 22 by elastic force and contacts the structure main body 22 to ground the structure main body 22.

  In this case, since the protrusion of the adhesive 14 is suppressed in the structure body 22 according to the present embodiment, the reliability of the connection of the ground circuit is improved, and the electromagnetic shielding effect of the structure body 22 is improved. ing. The groove 22A is preferably formed closer to the substrate 11 than the contact between the contact portion 31A and the structure main body 22 so as not to interfere with the electrical connection between the grounding portion 31A and the structure main body 22.

  In addition, for example, a substrate 32 on which connection pins 33 are formed is installed at the bottom of the holding container 31 so that the circuit of the semiconductor element 12 and the mother board 40 can be connected.

  Next, an example of a method for manufacturing the semiconductor device 10 will be described step by step based on FIGS. 5A to 5F. However, in the figure, the same reference numerals are given to the parts described above, and the description will be omitted.

  First, in the step shown in FIG. 5A, the semiconductor element 12 is mounted on the substrate 11. For example, the semiconductor element 12 is electrically connected to the wiring of the substrate 11 with a bonding wire (not shown).

  Next, in the step shown in FIG. 5B, the above-described sealing structure 21 (see FIG. 2) is prepared. The sealing structure 21 includes a structure body 22 and a light collecting unit 23, and the structure body 22 is integrally formed by a resin molding method. And the ventilation hole 25 which penetrates the step part 22C and the thick part 22D of the structure main body 22 is penetrated. The vent hole 25 may be cut by machining after the structure body 22 is molded, or may be structured by providing a pin for molding the vent hole 25 in a mold for molding the structure body 22. A method of simultaneously molding the body main body 22 in the process of molding may be used.

  Further, a protrusion 22E that fits into a recess (not shown) of the substrate 11 protrudes from the lower peripheral edge 22B of the structure body 22. The protrusion 22E is for positioning the mounting position of the structure body 22 on the substrate 11.

  Next, in the step shown in FIG. 5C, the bonding adhesive 14 is disposed at a predetermined position on the substrate 11 using the dispenser D. The arrangement position of the adhesive 14 corresponds to the shape of the lower end of the structure body 22. Further, as the bonding adhesive 14, it is preferable to use a thermosetting resin that has good bonding properties and high bonding reliability.

  Next, in the step shown in FIG. 5D, the lower peripheral edge portion 22B of the structure body 22 is pressed against the position where the adhesive 14 is disposed, thereby bonding the lower peripheral edge portion 22B of the structure body 22 to the substrate 11. At that time, the protrusion 22E of the lower peripheral edge portion 22B is fitted into a concave portion (not shown) of the substrate 11, and the mounting position of the structure body 22 is positioned.

  Next, in the step shown in FIG. 5E, the substrate 11 to which the structure body 22 is bonded is attached to a curing device, and heat treatment (curing treatment) is performed to cure the adhesive 14 and improve the adhesive strength. To do. Note that the heating temperature of the heat treatment is set to be a heating temperature corresponding to the curing temperature corresponding to the material of the adhesive 14. At that time, in the internal space 13 of the structure body 22, the gas in the internal space 103 is discharged from the vent hole 25 to the outside due to the pressure difference between the inside and outside of the internal space 13 due to the temperature rise, and the pressure rise in the internal space 13 is prevented. Is done.

  Next, in the step shown in FIG. 5F, the nozzle of the dispenser D is moved above the vent hole 25 and the ultraviolet curable adhesive 26 is dropped. The vent hole 25 has a small diameter, but the liquid adhesive 26 flows in by capillary action. Then, the adhesive 26 flows into one of the vent holes 25 from one end of the vent hole 25 opened in the step portion 22C of the structure body 22 and descends to the other lower end. Further, as described above, the length of the vent hole 25 in the Z-axis direction is extended to the dimension L1, and the internal volume of the vent hole 25 is increased. Therefore, all of the adhesive 26 dropped on the step portion 22 </ b> C of the structure body 22 penetrates into the vent hole 25.

  Next, in the step shown in FIG. 5G, the substrate 11 to which the structure body 22 is bonded is attached to the ultraviolet irradiation device, and the structure body 22 is irradiated with ultraviolet rays from the ultraviolet lamp 50 to perform ultraviolet irradiation treatment. As a result, the adhesive 26 injected into the vent hole 25 is cured to close the vent hole 25. In this way, the semiconductor device 10 shown in FIG. 2 can be formed.

  FIG. 6 is a longitudinal sectional view showing a semiconductor device according to the second embodiment. In FIG. 6, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 6, the vent hole 125 is tapered so that the inner diameter of one end 125a is larger than the inner diameter of the other end 125b. Thus, since the opening area of the one end 125a of the vent hole 125 formed in a tapered shape is large, even if the position of the nozzle of the dispenser D is slightly shifted, the discharged adhesive 26 does not come off. Therefore, the nozzle position of the dispenser D can be easily controlled.

  Furthermore, since the volume of the vent hole 125 is increased in the radial direction, even if two drops of the adhesive 26 are dropped from the nozzle of the dispenser D, the adhesive 26 is prevented from overflowing from the vent hole 125. .

  FIG. 7 is a longitudinal sectional view showing a semiconductor device according to the third embodiment. In FIG. 7, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 7, the vent hole 225 has a different hole diameter so that the inner diameter of the one end 225a is larger than the inner diameter of the other end 225b. As described above, the vent hole 225 formed in a stepped shape has a large opening area at the one end 225a, so that the discharged adhesive 26 can be removed even if the position of the nozzle of the dispenser D is slightly shifted. Therefore, the position of the nozzle of the dispenser D can be easily controlled.

  Further, the vent hole 225 has an enlarged volume in the radial direction at the one end 225a. Therefore, even if two drops of the adhesive 26 are dropped from the nozzle of the dispenser D, the adhesive 26 may overflow from the vent hole 225. Is prevented.

  FIG. 8 is a longitudinal sectional view showing a semiconductor device according to the fourth embodiment. FIG. 9 is a plan view showing a semiconductor device according to the fourth embodiment. 8 and 9, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIGS. 8 and 9, the vent hole 325 is formed in a wide concave shape in an arc shape when one end 325 a is viewed from above. Accordingly, the one end 325a of the vent hole 325 is an opening that is greatly enlarged than the hole, and the inner surface is curved in a bowl shape, so that the dripped adhesive 26 is disposed at the other end by the inclined surface of the wide recess. It is possible to lead to 325b.
The other end 325b of the vent hole 325 is formed to extend in the Z direction as a small diameter hole.

  Thus, since the one end 325a of the vent hole 325 is formed in a wide concave shape, even if the position of the nozzle of the dispenser D is slightly shifted, the discharged adhesive 26 does not come off, so the nozzle of the dispenser D Can be easily controlled.

  Further, since the vent hole 325 has an enlarged volume in the radial direction (surface direction) of the one end 325a, even if two drops of the adhesive 26 are dropped from the nozzle of the dispenser D, the adhesive 26 remains in the vent 325. Is prevented from overflowing.

  The structure of the semiconductor device and the manufacturing method thereof described above are examples of the present invention, and can be variously modified and changed. For example, the resin material constituting the structure body 22 is not limited to polycarbonate resin, and other resin materials can be used. Similarly, the conductive material added to the resin material and the metal film formed on the surface are not limited to the materials described in the above embodiments, and can be formed using various materials. .

  According to the present invention, a semiconductor device having a structure in which a semiconductor element is sealed on a substrate, a semiconductor having a good structure for sealing the semiconductor element and high electrical connection reliability An apparatus can be provided.

  Moreover, in the said Example, although photoelectric conversion elements, such as a CCD image sensor and a CMOS image sensor, were illustrated as a semiconductor element, not only this but it was comprised so that a signal might be output when light-receiving another semiconductor element or light. Of course, the present invention can also be applied to a photoelectric conversion element.

It is a figure which shows the structure of the conventional semiconductor device. 1 is a diagram illustrating a structure of a semiconductor device according to Example 1. FIG. It is a figure which shows the state which block | closed the air vent of the semiconductor device by Example 1. FIG. It is an example of mounting of the semiconductor device of FIG. FIG. 3 is a diagram (part 1) illustrating a method for manufacturing the semiconductor device of FIG. 2; FIG. 3 is a diagram (No. 2) illustrating a method for manufacturing the semiconductor device of FIG. 2; FIG. 3 is a diagram (No. 3) illustrating a method for manufacturing the semiconductor device of FIG. 2; FIG. 4 is a diagram (No. 4) illustrating a method for manufacturing the semiconductor device of FIG. 2; FIG. 5 is a view (No. 5) showing a method for manufacturing the semiconductor device of FIG. 2; FIG. 6 is a view (No. 6) showing a method for manufacturing the semiconductor device of FIG. 2; FIG. 7 is a view (No. 7) showing a method for manufacturing the semiconductor device of FIG. 2; 6 is a longitudinal sectional view showing a semiconductor device according to Example 2. FIG. 7 is a longitudinal sectional view showing a semiconductor device according to Example 3. FIG. 6 is a longitudinal sectional view showing a semiconductor device according to Example 4. FIG. 6 is a plan view showing a semiconductor device according to Example 4. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Board | substrate 12 Semiconductor element 13 Internal space 14,26 Adhesive 21 Sealing structure 22 Structure main body 22A Lens attachment part 22B Lower peripheral part 22C Step part 22D Thick part 23 Condensing means 23A Lens part 23B Attachment part 25 Vent 25a One end 25b The other end 31 Holding container 31A Grounding part 32 Substrate 33 Pin 40 Motherboard

Claims (10)

A substrate on which a semiconductor element is installed;
A sealing structure bonded to the substrate by an adhesive so as to cover the semiconductor element;
A semiconductor device having a vent hole provided in the sealing structure,
One end of the vent hole is opened outside the sealing structure, and the other end of the vent hole is formed to extend inside the sealing structure so as to open near the substrate. apparatus.   The semiconductor device according to claim 1, wherein the vent hole has an opening at the one end larger than an opening at the other end.   2. The semiconductor device according to claim 1, wherein the vent hole is formed in a tapered shape so that an inner diameter of the one end is larger than an inner diameter of the other end.   2. The semiconductor device according to claim 1, wherein the vent hole communicates a hole having a different inner diameter so that the opening at the one end has a larger diameter than the opening at the other end.   2. The semiconductor device according to claim 1, wherein the vent hole is formed in a tapered shape in which the opening at the one end is enlarged in diameter, and the opening at the other end is formed in a smaller diameter than the one end.   The semiconductor device according to claim 1, wherein the semiconductor element is a photoelectric conversion element.   The semiconductor device according to claim 6, wherein the sealing structure includes a condensing unit for condensing incident light on the photoelectric conversion element.   The semiconductor device according to claim 1, wherein the structure body includes a conductive material, and the structure body functions as an electromagnetic shield of the semiconductor element. Installing a semiconductor element on a substrate;
A vent is formed in a sealing structure that seals the semiconductor element, one end of the vent is opened to the outside of the sealing structure, and the other end of the vent is near the substrate. Extending to the inside of the body,
Bonding the edge of the sealing structure onto the substrate with an adhesive;
Heating and curing the adhesive, and discharging the gas in the internal space formed inside the sealing structure from a vent provided in the sealing structure;
A step of dripping an adhesive into one end opening of the vent hole to close the vent hole;
A method for manufacturing a semiconductor device, comprising: The semiconductor element is a photoelectric conversion element,
The method for manufacturing a semiconductor device according to claim 9, wherein the sealing structure includes a light collecting unit for supplying incident light to the photoelectric conversion element.

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