JP2007329444A - Light emitting element and its manufacturing method - Google Patents

Light emitting element and its manufacturing method Download PDF

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JP2007329444A
JP2007329444A JP2006194894A JP2006194894A JP2007329444A JP 2007329444 A JP2007329444 A JP 2007329444A JP 2006194894 A JP2006194894 A JP 2006194894A JP 2006194894 A JP2006194894 A JP 2006194894A JP 2007329444 A JP2007329444 A JP 2007329444A
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light
circuit board
light emitting
recess
forming
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Soon Jae Yu
ジェ・ユ スーン
Don Su Kim
スー・キム ドン
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ITSWELL CO Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin light emitting element with high light directivity, light use efficiency and efficient productivity. <P>SOLUTION: This light emitting element includes a concave section formed in a metallic layer on a circuit board; a light emitting diode chip installed in the concave section; and a light extractor configured of light transmissive resin materials formed so that at least the concave section can be packed, and the light emitting diode chip can be covered. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、光利用効率の高い新規発光素子、特に狭指向性実装型(SMD)発光ダイオード(LED)ランプ、およびその新規製造方法に関する。本発明の方法は、小型・薄型の形状特性を維持しながら、LEDランプの性能を向上させるとともに、歩留・生産性の向上やコストの低減といった製造上の利点をもたらすものである。   The present invention relates to a novel light-emitting element with high light utilization efficiency, in particular, a narrow directivity mounting type (SMD) light-emitting diode (LED) lamp, and a novel manufacturing method thereof. The method of the present invention improves the performance of the LED lamp while maintaining a small and thin shape characteristic, and also provides manufacturing advantages such as an improvement in yield and productivity and a reduction in cost.

狭指向性実装型LEDランプに関する従来技術の例を図1a、1b、2a、2b、2cおよび2dに示す。図1aおよび1bは、2枚のPCB層(10および20)を貼り合わせる技術(従来例1)であり、図2a、2b、2cおよび2dは、基板上に透光性成形物33および光反射性成形物34を順次形成する技術(従来例2)である(いずれも特許文献1参照)。従来例1では、図1aおよび1bに見られるように、回路基板10に多数のチップ11を集積実装した後で、各素子(チップ)の光利用率を上げるために反射板を設ける必要があり、また、反射板設置のために、別の回路基板(第2層基板)20に貫通ホール21を形成して、前記チップが実装された回路基板(第1層基板)10に合わせて接着して形成しなければならなかった。一方、図2a、2b、2cおよび2dに示した従来例2では、回路基板30に、全体を覆う(図2a)、もしくは一定の大きさの島状の(図2b)成形物(1次成形物、それぞれ32もしくは33)を形成した後で、ダイシングにより1次成形物を部分的に除去し、この構造に第2の反射材料を成形して反射板34を設置しなければならなかった。   Examples of prior art relating to narrowly directional mounted LED lamps are shown in FIGS. 1a, 1b, 2a, 2b, 2c and 2d. FIGS. 1a and 1b show a technique for bonding two PCB layers (10 and 20) (conventional example 1). FIGS. 2a, 2b, 2c and 2d show a translucent molded product 33 and light reflection on a substrate. This is a technique (Conventional Example 2) for sequentially forming the molded product 34 (see Patent Document 1). In Conventional Example 1, as shown in FIGS. 1a and 1b, after a large number of chips 11 are integrated and mounted on the circuit board 10, it is necessary to provide a reflector to increase the light utilization rate of each element (chip). In order to install the reflector, a through hole 21 is formed in another circuit board (second layer board) 20 and bonded to the circuit board (first layer board) 10 on which the chip is mounted. Had to be formed. On the other hand, in the conventional example 2 shown in FIGS. 2a, 2b, 2c, and 2d, the circuit board 30 is entirely covered (FIG. 2a) or is a certain size island-shaped (FIG. 2b) molded product (primary molding). After forming the object 32 or 33), the primary molding had to be partially removed by dicing, the second reflective material was molded into this structure and the reflector 34 had to be installed.

さらに、従来例1では、2枚の回路基板を合わせるため、回路基板のコストや発光ダイオードの歩留・生産性の低下が発生することになり、また、従来例2では、エポキシ樹脂の硬化の際、成形物の収縮率が回路基板の温度変化の際のそれとは異なり、通常0.5%〜1.5%程度であるため、回路基板に成形樹脂の収縮力が伝わって変形することになって、曲がりが激しくなる。この場合、回路基板の厚さや金属基板の厚さを目標とする値で一定に維持するには、回路基板の曲がりを甘受しなければならないが、その際、基板の中央と両側との曲がりによる高さの差が約0.5mm以上になると、ダイシングにより反射性材料を所定の形状に形成することが困難となり、発光ダイオードの歩留や生産性に悪影響を与える可能性もある。また、この場合、成形された樹脂内部に大きな収縮力が含まれることによる形成済樹脂の発光ダイオードからの剥離や、発光ダイオードの分離などの問題が起こる可能性がある。さらに、反射板を成形するためにダイシングによって反射構造を形成しなければならないが、その際、ダイシングの程度を大きくすると、反射板に利用される樹脂類と回路基板との接着力不足が生じ、作製された発光ダイオードからの剥離が起こる可能性がある。このため、通常は控えめにダイシングをしなければならないが、これにより、この隙間を通して光の反射が起こらず、光のリークが起こるという問題が発生する可能性がある。   Furthermore, in the conventional example 1, since the two circuit boards are combined, the cost of the circuit board and the yield / productivity of the light emitting diodes are reduced. In the conventional example 2, the epoxy resin is cured. At this time, the shrinkage rate of the molded product is different from that at the time of temperature change of the circuit board, and is usually about 0.5% to 1.5%. Therefore, the shrinkage force of the molding resin is transmitted to the circuit board to be deformed. And the curve becomes intense. In this case, in order to keep the thickness of the circuit board and the thickness of the metal board constant at the target values, it is necessary to accept the bending of the circuit board, but at that time, due to the bending of the center and both sides of the board If the height difference is about 0.5 mm or more, it becomes difficult to form the reflective material in a predetermined shape by dicing, which may adversely affect the yield and productivity of the light emitting diode. In this case, there is a possibility that problems such as separation of the formed resin from the light emitting diode and separation of the light emitting diode due to the large shrinkage force contained in the molded resin. Furthermore, in order to mold the reflecting plate, it is necessary to form a reflecting structure by dicing.At that time, if the degree of dicing is increased, insufficient adhesion between the resin and the circuit board used for the reflecting plate occurs. Peeling from the manufactured light emitting diode may occur. For this reason, normally dicing must be performed conservatively, but this may cause a problem that light is not reflected through the gap and light leaks.

また、従来例2では、発光ダイオードチップを回路基板平面上に実装することで、チップからの放出光は概ね薄型の光反射板で反射して指向性を有するはずであるが、ここで光の反射効率や光指向性、その他の光利用効率などからみると、回路基板に反射構造を設置するのに比べて全般的な性能の低下が発生する。また放出光が概ね薄型の光反射板で反射を繰り返しながら進むと、この反射板は硬化し放出光を吸収することになり、発光ダイオードの信頼性が低下する。   Further, in Conventional Example 2, by mounting the light emitting diode chip on the circuit board plane, the emitted light from the chip should be reflected by the thin light reflector and have directivity. From the viewpoint of reflection efficiency, light directivity, and other light utilization efficiency, the overall performance is reduced as compared with the case where the reflection structure is installed on the circuit board. Further, when the emitted light advances while being repeatedly reflected by a thin light reflecting plate, the reflecting plate is cured and absorbs the emitted light, and the reliability of the light emitting diode is lowered.

しかも、従来例2においてダイシング後に設置する光反射板は、光のリークを防止するために回路基板から設置しなければならず、したがって、1次成形物の光レンズ部と概ね同じ高さで製作しなければならないため、熱膨張係数などの物性が類似でない場合、リフロー工程の際に成形物の剥離の問題が起こり、レンズ部の剥離、ワイヤ断線、反射板の剥離など、多数の問題が生じる可能性がある。
なお、特許文献2は、発光ダイオードの一般的な製法、特許文献3は、LEDチップの下面からの光を有効に利用できる発光ダイオードにそれぞれ関するものである。
特開2002−368281号公報 特開2002−368286号公報 特開2005−56941号公報
Moreover, the light reflector installed after dicing in Conventional Example 2 must be installed from the circuit board in order to prevent light leakage, and is therefore manufactured at approximately the same height as the optical lens portion of the primary molded product. Therefore, if the physical properties such as the thermal expansion coefficient are not similar, there will be a problem of peeling of the molded product during the reflow process, resulting in many problems such as peeling of the lens part, wire breakage, peeling of the reflector, etc. there is a possibility.
Patent Document 2 relates to a general method for manufacturing a light-emitting diode, and Patent Document 3 relates to a light-emitting diode that can effectively use light from the lower surface of an LED chip.
JP 2002-368281 A JP 2002-368286 A JP 2005-56941 A

本発明は、従来の回路基板を2つ接合する技術で生じる公差管理による歩留・生産性の低下、ダイシングおよび第2次成形によって反射板を設置することによる剥離、光の利用効率の低下などの問題点の解決、特に、発光ダイオードの小型・スリム化において、従来の技術は剥離の問題を解決するために金属板にエポキシ系材料をコーティングしていたが、これによる光利用効率の損失、光反射板の反射効率低減、光反射板とレンズ部との分離および光の散乱、光反射板のスリム化などにおける種々の制限の解消を目的とする。   The present invention is a reduction in yield / productivity due to tolerance management caused by the technology of joining two conventional circuit boards, peeling due to the installation of a reflector by dicing and secondary molding, a reduction in light utilization efficiency, etc. In the solution of this problem, especially in the miniaturization and slimming down of the light emitting diode, the conventional technology coated the metal plate with an epoxy-based material in order to solve the peeling problem, but this caused a loss of light utilization efficiency, The purpose is to eliminate various limitations in reducing the reflection efficiency of the light reflection plate, separating the light reflection plate from the lens portion, scattering light, and slimming the light reflection plate.

従来技術における上記の問題点を解決するために、本発明は下記の特徴を有する。すなわち、本発明は、回路基板上の金属層に形成された凹部と、該凹部に設置された発光ダイオードチップと、少なくとも凹部を充填し、発光ダイオードチップを被覆するように形成された光透過性樹脂材料からなる光抽出部とを含む発光素子に関する。
本発明はまた、凹部がハーフエッチングにより形成されたものである、上記発光素子に関する。
本発明はさらに、凹部の水平断面積が回路基板に近い程小さい、上記発光素子に関する。
本発明はさらにまた、凹部が反射率の高い物質で被覆されている、上記発光素子に関する。
また、本発明は、反射率の高い物質が、Ag、AlおよびAuからなる群より選択される金属である、上記発光素子に関する。
さらに、本発明は、光抽出部が、発光ダイオードチップより屈折率の低い樹脂材料またはシリコーン材料で形成されている、上記発光素子に関する。
さらにまた、本発明は、光抽出部のうち、凹部が位置する部分が、それ以外の部分に比べて厚く形成されている、上記発光素子に関する。
In order to solve the above problems in the prior art, the present invention has the following features. That is, the present invention relates to a recess formed in a metal layer on a circuit board, a light emitting diode chip installed in the recess, and a light transmitting property formed so as to fill at least the recess and cover the light emitting diode chip. The present invention relates to a light emitting element including a light extraction portion made of a resin material.
The present invention also relates to the above light emitting device, wherein the concave portion is formed by half etching.
The present invention further relates to the light-emitting element, wherein the horizontal sectional area of the recess is smaller as it is closer to the circuit board.
The present invention still further relates to the light emitting device, wherein the recess is coated with a highly reflective substance.
The present invention also relates to the light-emitting element, wherein the highly reflective substance is a metal selected from the group consisting of Ag, Al, and Au.
Furthermore, this invention relates to the said light emitting element in which the light extraction part is formed with the resin material or silicone material whose refractive index is lower than a light emitting diode chip.
Furthermore, this invention relates to the said light emitting element in which the part in which a recessed part is located among the light extraction parts is formed thickly compared with the other part.

本発明はまた、回路基板の上方に、凹部を取り囲むように形成され、少なくとも内側が反射率の高い物質からなる光ガイド部をさらに含む、上記発光素子に関する。
本発明はさらに、光ガイド部が樹脂材料からなる、上記発光素子に関する。
本発明はさらにまた、光ガイド部が、所定の傾斜を有するように形成されている、上記発光素子に関する。
また、本発明は、光ガイド部が、光抽出部の上に形成されている、上記発光素子に関する。
さらに、本発明は、光ガイド部が、回路基板から所定の距離に形成されている、上記発光素子に関する。
さらにまた、本発明は、光抽出部上、光透過性材料からなるレンズ部をさらに含む、上記発光素子に関する。
本発明はまた、光透過性材料が、蛍光体および拡散剤から選択される1種または2種以上の添加剤を含む、上記発光素子に関する。
本発明はさらに、レンズ部がフィルムからなる、上記発光素子に関する。
本発明はさらにまた、回路基板の金属層と、回路基板下部の電極および/または金属板とを連結する貫通路をさらに含む、上記発光素子に関する。
The present invention also relates to the above light emitting element, further including a light guide portion formed above the circuit board so as to surround the recess and having at least an inner side made of a highly reflective material.
The present invention further relates to the light emitting device, wherein the light guide portion is made of a resin material.
Furthermore, the present invention relates to the light emitting element, wherein the light guide portion is formed to have a predetermined inclination.
The present invention also relates to the light emitting element, wherein the light guide part is formed on the light extraction part.
Furthermore, this invention relates to the said light emitting element in which the light guide part is formed in the predetermined distance from the circuit board.
Furthermore, the present invention relates to the light emitting element, further including a lens portion made of a light transmissive material on the light extraction portion.
The present invention also relates to the above light emitting device, wherein the light transmissive material includes one or more additives selected from phosphors and diffusing agents.
The present invention further relates to the above light emitting device, wherein the lens portion is made of a film.
The present invention still further relates to the above light emitting device, further comprising a through path connecting the metal layer of the circuit board and the electrode and / or metal plate under the circuit board.

また、本発明は、回路基板上の金属層に凹部を形成する第一の工程、該凹部に発光ダイオードチップを実装する第二の工程、少なくとも該凹部を充填し、発光ダイオードチップを被覆するように光透過性樹脂材料で光抽出部を形成する第三の工程、回路基板の上方に、凹部を取り囲むように光反射性樹脂材料を成形して光ガイド部を形成する第四の工程、および、光ガイド部で取り囲まれた空間に光透過性材料を成形してレンズ部を形成する第五の工程を含む、発光素子の製造方法に関する。
さらに、本発明は、回路基板上の金属層に凹部を形成する第一の工程、該凹部に発光ダイオードチップを実装する第二の工程、少なくとも該凹部を充填し、発光ダイオードチップを被覆するように光透過性樹脂材料で光抽出部を形成する第三の工程、抽出部上に光透過性材料を成形してレンズ部を形成する第四の工程、および、少なくともレンズ部の側方に、凹部を取り囲むように光反射性樹脂材料を成形して光ガイド部を形成する第五の工程を含む、発光素子の製造方法に関する。
Also, the present invention provides a first step of forming a recess in a metal layer on a circuit board, a second step of mounting a light emitting diode chip in the recess, and filling at least the recess to cover the light emitting diode chip. A third step of forming a light extraction portion with a light transmissive resin material, a fourth step of forming a light guide portion by molding a light reflective resin material so as to surround the recess above the circuit board, and The present invention also relates to a method for manufacturing a light emitting element, including a fifth step of forming a lens portion by molding a light transmissive material in a space surrounded by a light guide portion.
Furthermore, the present invention provides a first step of forming a recess in the metal layer on the circuit board, a second step of mounting the light emitting diode chip in the recess, filling at least the recess and covering the light emitting diode chip. A third step of forming a light extraction portion with a light transmissive resin material, a fourth step of forming a light transmissive material on the extraction portion to form a lens portion, and at least on the side of the lens portion, The present invention relates to a method for manufacturing a light emitting element, including a fifth step of forming a light guide portion by molding a light reflective resin material so as to surround a recess.

さらにまた、本発明は、回路基板上に発光ダイオードチップを実装する工程と、該発光ダイオードチップの側方を取り囲み、かつ、取り囲まれた空間の水平断面積が回路基板に近い程小さくなるように光反射性樹脂材料を成形して光ガイド部を形成する工程と、前記取り囲まれた空間に、光透過性材料を成形することによりレンズ部を形成する工程とを含む、発光ダイオードの製造方法に関する。
本発明はまた、回路基板上の金属層に凹部を設けることにより反射構造を形成する工程をさらに含む、前記方法に関する。
本発明はさらに、回路基板上に、発光ダイオードチップの位置に対応した開口を有する別の回路基板を接合することによって反射構造を形成する工程をさらに含む、前記方法に関する。
Furthermore, the present invention provides a process for mounting a light-emitting diode chip on a circuit board, and surrounds the side of the light-emitting diode chip, and the horizontal cross-sectional area of the enclosed space becomes smaller as the circuit board is closer. The present invention relates to a method for manufacturing a light-emitting diode, comprising: forming a light guide part by molding a light-reflective resin material; and forming a lens part by molding a light-transmitting material in the enclosed space. .
The present invention also relates to the method, further comprising the step of forming a reflective structure by providing a recess in the metal layer on the circuit board.
The present invention further relates to the method, further comprising forming a reflective structure on the circuit board by bonding another circuit board having an opening corresponding to the position of the light emitting diode chip.

本発明においては、鍍金および湿式エッチング技術などを用いることにより、1つの回路基板内における光反射構造(凹部)の精密な設置が可能となるうえ、歩留や生産性も高まり、かつ性能も向上する。特に反射構造に反射率が高い金属を被覆した場合には、光の利用効率が高くなる。また、厚さが薄い小型の抽出部の形成が可能になり、光の抽出効率を向上させることができ、波長変換および拡散などの他の目的での光の利用効率を向上させることが可能である。
また本発明は、従来の日本国日亜方式のディスペンス法を利用する方法に比べて、少量生産の場合でも、均一性、歩留および量産性の向上、コストの低減、大型チップおよび多数チップの実装、成形コンパウンドの蛍光体および拡散体のタブレット管理、熱放出特性の向上および小型・スリム化、特に光出力性能の向上が可能である。
さらに、本発明により、従来の回路基板を使用する場合の問題点であった回路基板の曲がりによる剥離の解決、2重回路基板を使用する場合に比べた歩留や生産性の向上、コスト低減に伴う製造単価の低減、特に反射構造の設置による光利用効率および光性能の向上が可能となる。
In the present invention, by using plating and wet etching techniques, it is possible to precisely install the light reflecting structure (recessed portion) in one circuit board, and the yield and productivity are increased, and the performance is also improved. To do. In particular, when the reflective structure is coated with a metal having a high reflectance, the light utilization efficiency is increased. Also, it is possible to form a small extractor with a small thickness, improve the light extraction efficiency, and improve the light utilization efficiency for other purposes such as wavelength conversion and diffusion. is there.
In addition, the present invention has improved uniformity, yield and mass productivity, reduced cost, large-sized chips and multiple chips, even in the case of small-scale production, as compared to the conventional method using the Japan-Nichia dispensing method. It is possible to manage tablets for phosphors and diffusers for mounting and molding compounds, improve heat release characteristics, and reduce the size and slimness, especially the light output performance.
Furthermore, according to the present invention, it is possible to solve the problem of peeling due to the bending of the circuit board, which has been a problem when using the conventional circuit board, and to improve the yield and productivity and reduce the cost compared to the case where the double circuit board is used. Therefore, it is possible to reduce the manufacturing unit cost associated with the improvement of the light utilization efficiency and the light performance by installing the reflecting structure.

本発明を、その一態様である、
回路基板上に反射板および反射構造(凹部)を作る第一工程、
前記回路基板に集積して発光ダイオードチップを実装した後、光抽出部を透過性樹脂材料で個別に1次成形する第二工程、
第二工程によって形成した成形構造の間に、光反射性樹脂材料で光ガイド部を2次成形する第三工程、
第三工程によって形成した成形構造の間に、透過性材料に蛍光体などの各種添加剤を混ぜた混合物を充真し、レンズ部を作製する第四工程、および
発光ダイオードを分離する第五工程
を含む、発光ダイオードの製造方法を例として以下に説明する。
The present invention is one aspect thereof.
A first step of creating a reflector and a reflecting structure (concave) on the circuit board;
A second step in which after the light emitting diode chip is mounted on the circuit board and integrated, the light extraction unit is individually primary molded with a transparent resin material;
A third step of secondarily molding the light guide portion with a light-reflective resin material between the molding structures formed by the second step;
A fourth process for producing a lens part by filling a mixture in which various additives such as phosphors are mixed with a transparent material between the molded structures formed by the third process, and a fifth process for separating a light emitting diode. A method for manufacturing a light-emitting diode including the above will be described below as an example.

本発明の第一工程において、指向性および出力特性を向上させるために、回路基板上に鍍金されたCuなどの金属をハーフエッチングしてから、反射率の高い材料、例えば、Ag、Al、Auなどの金属を再度鍍金するなどして被覆することができる。回路基板上の金属層(Cu鍍金など)の厚さは、反射構造を十分に形成することができれば特に限定されないが、好ましくは80〜300μm、より好ましくは120〜220μm、特に好ましくは150〜200μmである。また、上記の高い反射率は、光利用率の向上がもたらされれば特に限定されないが、好ましくは約70%以上、より好ましくは約80%以上、特に好ましくは約90%以上である。このとき、エッチングした反射構造の形状は複数の曲率半径を持つようにしたり、反射構造の水平断面積が回路基板に近い程小さくなるよう、例えばテーパー状、皿状または椀状に形成することにより、側面および下面に向かう光の反射を誘導できるようにすると効率が向上する。特に、狭い指向性を持つようにすると効果的である。   In the first step of the present invention, in order to improve directivity and output characteristics, a metal such as Cu plated on the circuit board is half-etched and then a highly reflective material such as Ag, Al, Au, etc. It can be coated by re-plating a metal such as. The thickness of the metal layer (such as Cu plating) on the circuit board is not particularly limited as long as the reflective structure can be sufficiently formed, but is preferably 80 to 300 μm, more preferably 120 to 220 μm, and particularly preferably 150 to 200 μm. It is. The high reflectance is not particularly limited as long as the light utilization rate is improved, but is preferably about 70% or more, more preferably about 80% or more, and particularly preferably about 90% or more. At this time, the shape of the etched reflection structure has a plurality of radii of curvature, for example, it is formed in a tapered shape, a dish shape, or a bowl shape so that the horizontal sectional area of the reflection structure becomes smaller as it is closer to the circuit board. If the reflection of the light toward the side surface and the lower surface can be induced, the efficiency is improved. In particular, it is effective to have a narrow directivity.

本発明の第二工程では、光を抽出通過させる抽出部(光抽出部)と光の反射および誘導特性を利用して狭い指向性を付与するガイド部(光ガイド部または反射部)とを形成することになるが、発光ダイオードチップおよびワイヤをケアし、光抽出効率を上げるために、通常は、透過性で、半導体より屈折率が低い樹脂材料またはシリコーン材料を使って、抽出部成形物をガイド部より先に成形する。
本発明の第二工程において、抽出部の成形は、各チップについて抽出部の成形を個別的に行うことができる。さらに、収縮の中心(センター)を、集積するチップの個数と同程度に多数化して、回路基板の曲がりを防止するために、全体を薄くし、チップが位置する部分、例えば、凹部が位置する部分だけを厚くする方法も利用することができる。
以上の工程により、回路基板上の金属層に形成された凹部と、該凹部に実装された発光ダイオードチップと、少なくとも凹部を充填し、発光ダイオードチップを被覆するように形成された光透過性樹脂材料からなる光抽出部とを含む本発明の発光素子の原型が出来上がる。
In the second step of the present invention, an extraction part (light extraction part) that extracts and passes light and a guide part (light guide part or reflection part) that imparts narrow directivity using light reflection and guidance characteristics are formed. In order to care for light emitting diode chips and wires, and to increase the light extraction efficiency, the extraction part molding is usually made of a resin material or silicone material that is transparent and has a lower refractive index than the semiconductor. Molded before the guide.
In the second step of the present invention, the extraction unit can be molded individually for each chip. Furthermore, in order to increase the number of contraction centers as much as the number of chips to be integrated to prevent the circuit board from being bent, the whole is thinned, and a portion where the chip is located, for example, a recess is located. A method of thickening only the part can also be used.
Through the above steps, a recess formed in the metal layer on the circuit board, a light emitting diode chip mounted on the recess, and a light-transmitting resin formed to fill at least the recess and cover the light emitting diode chip A prototype of the light emitting device of the present invention including a light extraction portion made of a material is completed.

本発明の第三工程において、光に指向性を付与するガイド部を作製するため、第二工程において形成した抽出部の構造の間を反射率が高い物質、例えば樹脂材料などを利用して2次成形することができる。この結果、光ガイド部が凹部を取り囲むように形成される。光ガイド部は、必ずしもその全体が反射性である必要はなく、少なくとも内側、すなわちチップに面した側が反射率の高い物質からなっていてもよい。またこの際、前記ガイド部は最終放出光に指向性を与える効果が大きいため、前記第二工程で形成した抽出部の上に位置することができる。特に回路基板からある程度の距離に位置してもよい。この距離は、光に良好な指向性を与えることができれば特に限定されないが、好ましくは1〜100μm、より好ましくは2〜50μm、特に好ましくは5〜15μmである。このように、抽出部を回路基板の全域に成形することにより、剥離の発生がより一層抑えられ、かつ、トランスファー成形作業が容易になるため、金型作製の容易化および低コスト化が可能となる。
本発明の第三工程において、ガイド部の形状の特徴は、チップから放出された光線が良好に反射し、高い指向性を有するために、一定の傾斜(傾き)を持つようにすることができる。この傾斜は上記の効果を得ることができれば特に限定されないが、ガイド部の頂部が基部よりもチップから離れるように、回路基板の垂線に対して、好ましくは0〜15°、より好ましくは4〜12°、特に好ましくは6〜12°である。
In the third step of the present invention, in order to produce a guide portion that imparts directivity to light, a material having a high reflectance, such as a resin material, is used between the structures of the extraction portion formed in the second step. Next molding can be performed. As a result, the light guide portion is formed so as to surround the recess. The light guide portion does not necessarily have to be reflective as a whole, and at least the inner side, that is, the side facing the chip, may be made of a highly reflective material. Further, at this time, the guide portion has a great effect of giving directivity to the final emitted light, and thus can be positioned on the extraction portion formed in the second step. In particular, it may be located at a certain distance from the circuit board. This distance is not particularly limited as long as it can give good directivity to light, but is preferably 1 to 100 μm, more preferably 2 to 50 μm, and particularly preferably 5 to 15 μm. In this way, by forming the extraction part over the entire area of the circuit board, the occurrence of peeling can be further suppressed, and the transfer molding operation can be facilitated. Become.
In the third step of the present invention, the feature of the shape of the guide portion is that the light emitted from the chip is reflected well and has high directivity, so that it can have a certain inclination (tilt). . This inclination is not particularly limited as long as the above-described effect can be obtained, but it is preferably 0 to 15 °, more preferably 4 to the vertical of the circuit board so that the top of the guide part is farther from the chip than the base. It is 12 °, particularly preferably 6 to 12 °.

本発明の第四工程では、第二工程で形成した光抽出部の光の通過効率を向上させるため、屈折率が異なる別の層を利用してさらに抽出効率を上げたり、指向性を与えるようにレンズ部を形成する目的で再度成形するが、このとき、必要に応じて、波長の変換または拡散の目的で、透過性樹脂に蛍光体などの各種添加剤を混ぜることができる。
また、本発明の第四工程において、レンズ部は第三工程で形成された成形構造の間を充真することで作製することができる。
In the fourth step of the present invention, in order to improve the light passing efficiency of the light extraction unit formed in the second step, another layer having a different refractive index is used to further increase the extraction efficiency or provide directivity. In this case, various additives such as a phosphor can be mixed with the transmissive resin for the purpose of wavelength conversion or diffusion, if necessary.
In the fourth step of the present invention, the lens portion can be manufactured by filling the space between the molded structures formed in the third step.

本発明の第一工程で回路基板上の鍍金されたCuなどの金属、または金属基板はチップから発生する熱の有効な放出のために利用されるが、この際鍍金されたCuの厚さは熱伝達にとても有効であり、特に下層の電極および金属板に熱伝導率が良い金属で連結する貫通した熱伝達の通路を設置することができる。ここで、金属の熱伝導率は、良好な熱伝達が得られれば特に限定されないが、好ましくは200W/m°K以上、より好ましくは300W/m°K以上、特に好ましくは350W/m°K以上である。   In the first step of the present invention, the metal such as Cu plated on the circuit board, or the metal substrate is used for effective release of heat generated from the chip, and the thickness of the plated Cu is It is very effective for heat transfer, and it is possible to install a heat transfer passage that penetrates the lower electrode and the metal plate with a metal having good thermal conductivity. Here, the thermal conductivity of the metal is not particularly limited as long as good heat transfer is obtained, but is preferably 200 W / m ° K or more, more preferably 300 W / m ° K or more, and particularly preferably 350 W / m ° K. That's it.

本発明において、第一工程で形成する反射構造は、2つの回路基板を接合することによって製造したり、あるいは平面上に作製して使用することもできる。   In the present invention, the reflecting structure formed in the first step can be manufactured by joining two circuit boards, or can be produced on a plane and used.

本発明は、第三工程と第四工程の順番を入れ替えて行うことも可能である。ここで、必要に応じて、前記レンズ部は、成形する代わりにフィルムの接着などにより形成することも可能である。   The present invention can also be performed by switching the order of the third step and the fourth step. Here, if necessary, the lens portion can be formed by adhesion of a film instead of molding.

[実施例]
本発明を、図3、4a、4b、5、6、7、8、9および表1を参照してさらに詳説する。なお、図3は本発明の外観図であり、図4a、4bおよび表1は、それぞれ回路基板100に形成するCu反射構造の形状および作製データを示し、図5は、回路基板100に形成する反射構造および指向構造の形状を示し、図6は、抽出部120の形成を示す模式図である。また、図7および8は、レンズ部140をガイド部130より先に作製する本発明の変法を示し、最後の図9はガイド部130作製の形状を示す。使用する回路基板100のCu鍍金101、111、112の厚さは、反射構造を形成するのに十分な程度の約150μm以上とすることができる。
[Example]
The invention will be further described with reference to FIGS. 3, 4a, 4b, 5, 6, 7, 8, 9 and Table 1. FIG. 3 is an external view of the present invention. FIGS. 4a and 4b and Table 1 show the shape and production data of the Cu reflecting structure formed on the circuit board 100, respectively. FIG. FIGS. 6A and 6B are schematic diagrams illustrating the formation of the extraction unit 120. FIGS. 7 and 8 show a modification of the present invention in which the lens part 140 is produced prior to the guide part 130, and the last FIG. 9 shows the shape of the guide part 130 produced. The thickness of the Cu plating 101, 111, 112 of the circuit board 100 to be used can be about 150 μm or more, which is sufficient to form a reflective structure.

下面に付着された金属基板および上層の基板100をエッチング、ラウティング方法による切断、熱放出のための貫通ホールの設置、および/または電導性材料の鍍金もしくは充真に供する。
露光技術を利用して光反射構造(凹部)を形成する。上記構造の形状は、下向する光と側面に向かう光とがいずれも指向性を有するように、複数の曲率半径を持つようにする。上記の反射構造はまた、反射率が高いAg等の金属材料でコーティングして完成する。この時、反射構造はチップ160から放出された光の再吸収が起こらないように大きさや形状を最適化する(図4bおよび表1参照)。
The metal substrate and the upper substrate 100 attached to the lower surface are subjected to etching, cutting by a routing method, installation of a through hole for heat dissipation, and / or plating or filling of a conductive material.
A light reflecting structure (concave portion) is formed using an exposure technique. The shape of the structure has a plurality of radii of curvature so that the downward light and the light directed to the side surface have directivity. The reflective structure is also completed by coating with a metal material such as Ag having a high reflectance. At this time, the size and shape of the reflecting structure are optimized so that re-absorption of light emitted from the chip 160 does not occur (see FIG. 4b and Table 1).

Figure 2007329444
Figure 2007329444

この回路基板100にダイオードチップ160を実装した後で光抽出部を成形しなければならないが、通常はチップ160での再吸収を防止するために成形物の屈折率を半導体のチップ160より小さくし、拡散板や波長変換の白色蛍光体を隔離して設置する。
このとき、成形物の材料と、回路基板100および金属層101との熱膨張係数の差による、チップ同士のまたはリフロー工程での剥離問題が起こらないように、回路基板100をエポキシ樹脂類、あるいはレジスト類などの材料でコーティングすることができる。
After the diode chip 160 is mounted on the circuit board 100, the light extraction portion must be molded. Usually, in order to prevent re-absorption at the chip 160, the refractive index of the molded product is made smaller than that of the semiconductor chip 160. Separate and install diffuser plates and wavelength-converting white phosphors.
At this time, the circuit board 100 is made of an epoxy resin or a resin so as not to cause a separation problem between chips or in a reflow process due to a difference in thermal expansion coefficient between the material of the molded product and the circuit board 100 and the metal layer 101. It can be coated with materials such as resists.

抽出部120も、上記問題を解決するため、成形する際に、各チップ160を個別に成形被覆したり、光ガイド部130を設置する部分とチップ160を被覆するところとを互いに違う厚さにし、収縮中心を多数化することができる。また、この時抽出部120の厚さを可能な限り小さくし、収縮率を低くすることが好ましいが、これは光反射構造を回路基板に設置することで可能となる。また、作製された発光ダイオードの剥離などの問題が起こらないように、内部収縮力を極力小さくする。
また、導光板に光を入射させるために、光ガイド層(光ガイド部)を設置するのが好ましいが、これには通常、白色や金属分子が分散され、反射率が高いか、または導光板との屈折率の差が大きい材料を使用する。この層は、回路基板100上に直接設置したり、または光抽出部120の上層に設置する。このとき、光ガイド部は、所望の光の進行を妨げないように設置することが好ましい。
In order to solve the above problem, the extraction unit 120 also forms and coats each chip 160 individually when molding, or makes the thickness where the part where the light guide unit 130 is installed and the part where the chip 160 is coated differ from each other. The number of contraction centers can be increased. At this time, it is preferable to reduce the thickness of the extraction unit 120 as much as possible and to reduce the shrinkage rate, but this can be achieved by installing the light reflecting structure on the circuit board. Also, the internal contraction force is made as small as possible so that problems such as peeling of the manufactured light emitting diode do not occur.
In order to make light incident on the light guide plate, it is preferable to install a light guide layer (light guide portion). Usually, white or metal molecules are dispersed and the reflectivity is high, or the light guide plate. Use a material with a large difference in refractive index. This layer is installed directly on the circuit board 100 or on the upper layer of the light extraction unit 120. At this time, it is preferable to install the light guide portion so as not to hinder the progress of desired light.

最後に、レンズの光効率を向上させるために、抽出部120と屈折率が異なる層を利用したり、波長変換および拡散の目的で、透過性樹脂に蛍光体などの各種添加剤を混合して、第三工程で形成された成形構造130の間を充真してレンズ部を形成した後、発光ダイオードを分離することになる。ここで、レンズ部は、必要に応じて、成形する代わりにフィルムを接着することなどにより形成することも可能である。
また、発光ダイオードを個別に分離するために、ダイシング法を利用することができるが、こうして作製される狭指向性表面実装型LEDランプは、生産の均一性および利便性を確保することで、歩留、生産性、製造単価、および信頼性が画期的に改善される。
Finally, in order to improve the light efficiency of the lens, a layer having a refractive index different from that of the extraction unit 120 is used, or various additives such as a phosphor are mixed with a transparent resin for the purpose of wavelength conversion and diffusion. Then, after filling the space between the molded structures 130 formed in the third step to form the lens portion, the light emitting diode is separated. Here, the lens portion can be formed by adhering a film instead of molding, if necessary.
In addition, a dicing method can be used to separate the light emitting diodes individually, but the narrowly directional surface-mount LED lamp manufactured in this way is a step by ensuring production uniformity and convenience. Yield, productivity, unit price, and reliability.

本発明の方法の幾つかの変法
本発明の一変法は、回路基板100をハーフエッチングし、反射板および反射構造を設けずに、この回路基板に発光ダイオードチップ160を集積して実装してから、抽出部120を、各チップ160について透過性樹脂で個別に1次成形した後、または、光の指向性のためのガイド部130を先に作製した後、最後にレンズの効率を向上させるため、または波長変換もしくは光の拡散のために、透過性樹脂および蛍光体などの各種添加剤を混合して、成形構造130の間を充真し、発光ダイオードを分離する表面実装型発光ダイオードランプ製造方法に関する。
Some Variations of the Method of the Invention One variation of the invention is to half-etch the circuit board 100 and integrate and mount the light emitting diode chip 160 on the circuit board without providing a reflector and reflection structure. From the above, after the extraction unit 120 is primary-molded individually for each chip 160 with a transparent resin, or after the guide unit 130 for light directivity is first produced, the efficiency of the lens is finally improved. For surface conversion or light diffusion, various additives such as a transparent resin and a phosphor are mixed to fill the space between the molded structures 130 and separate the light emitting diodes. It relates to a manufacturing method.

第一工程の反射構造は、従来の技術と同様に2つの回路基板を接合することによって製造したり、または平面上に作製したものを使用することもできる。
第三工程と第四工程とを互いに順番を入れ替えて作製することも可能である(図8参照)。
The reflection structure in the first step can be manufactured by joining two circuit boards as in the conventional technique, or a reflection structure manufactured on a plane can be used.
It is also possible to produce the third process and the fourth process by changing the order of each other (see FIG. 8).

回路基板に多数のチップを集積して実装した後、反射板を製作する従来の技術を示した図である。It is the figure which showed the prior art which manufactures a reflecting plate, after integrating and mounting many chips | tips on a circuit board. 回路基板に多数のチップを集積して実装した後、反射板を製作する従来の技術を示した図である。It is the figure which showed the prior art which manufactures a reflecting plate, after integrating and mounting many chips | tips on a circuit board. 回路基板にチップを実装する工程を示した図である。It is the figure which showed the process of mounting a chip | tip on a circuit board. 回路基板全体、または一定な大きさの島状に成形物を形成する従来の技術を示した図である。It is the figure which showed the prior art which forms a molded object in the whole circuit board or the island shape of a fixed magnitude | size. ダイシングにより1次成形部を除去し、この構造に第2の反射材料を成形して反射板を設置する従来の技術を示した図である。It is the figure which showed the prior art which removes a primary shaping | molding part by dicing, shape | molds a 2nd reflective material in this structure, and installs a reflecting plate. 回路基板に形成する反射構造および指向構造の形状を示した図である。It is the figure which showed the shape of the reflective structure and directivity structure which are formed in a circuit board. 製作された発光ダイオードの形状を示した図である。It is the figure which showed the shape of the manufactured light emitting diode. 回路基板に形成する反射構造の形状を示した図である。It is the figure which showed the shape of the reflective structure formed in a circuit board. 回路基板に形成する反射構造の形状を示した図である。It is the figure which showed the shape of the reflective structure formed in a circuit board. 回路基板に形成する反射構造および指向構造の形状を示した図である。It is the figure which showed the shape of the reflective structure and directivity structure which are formed in a circuit board. 抽出部の形成を示した模式図である。It is the schematic diagram which showed formation of the extraction part. 本発明の一態様を示した図である。FIG. 10 illustrates one embodiment of the present invention. 本発明の一態様を示した図である。FIG. 10 illustrates one embodiment of the present invention. 本発明の一態様を示した図である。FIG. 10 illustrates one embodiment of the present invention.

符号の説明Explanation of symbols

10 第1層基板
11 チップ
20 第2層基板
21 貫通ホール
30 基板
31 チップ
32 1次成形物(全体)
33 1次成形物(島状)
34 反射板
100 回路基板
101 金属板(金属層)
102 高反射性被覆
111 金属板(金属層)
112 金属板(金属層)
113 高反射性被覆
114 高反射性被覆
120 抽出部
130 ガイド部
140 レンズ部
151 電極
152 電極
160 チップ
161 ワイヤ
162 ワイヤ
10 First layer substrate 11 Chip 20 Second layer substrate 21 Through hole 30 Substrate 31 Chip 32 Primary molded product (whole)
33 Primary molded product (island shape)
34 reflector 100 circuit board 101 metal plate (metal layer)
102 Highly reflective coating 111 Metal plate (metal layer)
112 Metal plate (metal layer)
113 High reflective coating 114 High reflective coating 120 Extraction unit 130 Guide unit 140 Lens unit 151 Electrode 152 Electrode 160 Chip 161 Wire 162 Wire

Claims (21)

回路基板上の金属層に形成された凹部と、該凹部に設置された発光ダイオードチップと、少なくとも凹部を充填し、発光ダイオードチップを被覆するように形成された光透過性樹脂材料からなる光抽出部とを含む発光素子。   A light extraction comprising a recess formed in a metal layer on a circuit board, a light-emitting diode chip installed in the recess, and a light-transmitting resin material formed so as to fill at least the recess and cover the light-emitting diode chip A light emitting device including a portion. 凹部がハーフエッチングにより形成されたものである、請求項1に記載の発光素子。   The light emitting device according to claim 1, wherein the concave portion is formed by half etching. 凹部の水平断面積が回路基板に近い程小さい、請求項1または2に記載の発光素子。   The light emitting device according to claim 1, wherein the horizontal sectional area of the concave portion is smaller as it is closer to the circuit board. 凹部が反射率の高い物質で被覆されている、請求項1〜3のいずれかに記載の発光素子。   The light emitting element according to any one of claims 1 to 3, wherein the concave portion is coated with a highly reflective substance. 反射率の高い物質が、Ag、AlおよびAuからなる群より選択される金属である、請求項4に記載の発光素子。   The light emitting device according to claim 4, wherein the highly reflective substance is a metal selected from the group consisting of Ag, Al, and Au. 光抽出部が、発光ダイオードチップより屈折率の低い樹脂材料またはシリコーン材料で形成されている、請求項1〜5のいずれかに記載の発光素子。   The light-emitting element according to claim 1, wherein the light extraction unit is formed of a resin material or a silicone material having a refractive index lower than that of the light-emitting diode chip. 光抽出部のうち、凹部が位置する部分が、それ以外の部分に比べて厚く形成されている、請求項1〜6のいずれかに記載の発光素子。   The light emitting element in any one of Claims 1-6 in which the part in which a recessed part is located among the light extraction parts is formed thickly compared with the other part. 回路基板の上方に、凹部を取り囲むように形成され、少なくとも内側が反射率の高い物質からなる光ガイド部をさらに含む、請求項1〜7のいずれかに記載の発光素子。   The light emitting device according to any one of claims 1 to 7, further comprising a light guide portion formed above the circuit board so as to surround the concave portion and made of a substance having a high reflectance at least on the inside. 光ガイド部が樹脂材料からなる、請求項8に記載の発光素子。   The light emitting device according to claim 8, wherein the light guide portion is made of a resin material. 光ガイド部が、所定の傾斜を有するように形成されている、請求項8または9に記載の発光素子。   The light emitting element according to claim 8 or 9, wherein the light guide portion is formed to have a predetermined inclination. 光ガイド部が、光抽出部の上に形成されている、請求項8〜10のいずれかに記載の発光素子。   The light emitting element according to claim 8, wherein the light guide portion is formed on the light extraction portion. 光ガイド部が、回路基板から所定の距離に形成されている、請求項8〜11のいずれかに記載の発光素子。   The light emitting element according to claim 8, wherein the light guide portion is formed at a predetermined distance from the circuit board. 光抽出部上、光透過性材料からなるレンズ部をさらに含む、請求項1〜12のいずれかに記載の発光素子。   The light emitting element according to claim 1, further comprising a lens portion made of a light transmissive material on the light extraction portion. 光透過性材料が、蛍光体および拡散剤から選択される1種または2種以上の添加剤を含む、請求項13に記載の発光素子。   The light-emitting device according to claim 13, wherein the light-transmitting material includes one or more additives selected from phosphors and diffusing agents. レンズ部がフィルムからなる、請求項13または14に記載の発光素子。   The light emitting element according to claim 13 or 14, wherein the lens portion is made of a film. 回路基板の金属層と、回路基板下部の電極および/または金属板とを連結する貫通路をさらに含む、請求項1〜15のいずれかに記載の発光素子。   The light emitting element in any one of Claims 1-15 which further contains the penetration path which connects the metal layer of a circuit board, and the electrode and / or metal plate of a circuit board lower part. 回路基板上の金属層に凹部を形成する第一の工程、該凹部に発光ダイオードチップを実装する第二の工程、少なくとも該凹部を充填し、発光ダイオードチップを被覆するように光透過性樹脂材料で光抽出部を形成する第三の工程、回路基板の上方に、凹部を取り囲むように光反射性樹脂材料を成形して光ガイド部を形成する第四の工程、および、光ガイド部で取り囲まれた空間に光透過性材料を成形してレンズ部を形成する第五の工程を含む、発光素子の製造方法。   A first step of forming a recess in a metal layer on a circuit board; a second step of mounting a light-emitting diode chip in the recess; and a light-transmitting resin material so as to fill at least the recess and cover the light-emitting diode chip A third step of forming a light extraction part, a fourth step of forming a light guide part by molding a light-reflective resin material so as to surround the concave part above the circuit board, and surrounding the light guide part A method for manufacturing a light-emitting element, including a fifth step of forming a lens portion by molding a light-transmitting material in the space formed. 回路基板上の金属層に凹部を形成する第一の工程、該凹部に発光ダイオードチップを実装する第二の工程、少なくとも該凹部を充填し、発光ダイオードチップを被覆するように光透過性樹脂材料で光抽出部を形成する第三の工程、抽出部上に光透過性材料を成形してレンズ部を形成する第四の工程、および、少なくともレンズ部の側方に、凹部を取り囲むように光反射性樹脂材料を成形して光ガイド部を形成する第五の工程を含む、発光素子の製造方法。   A first step of forming a recess in a metal layer on a circuit board; a second step of mounting a light-emitting diode chip in the recess; and a light-transmitting resin material so as to fill at least the recess and cover the light-emitting diode chip In the third step of forming the light extraction portion, the fourth step of forming the lens portion by molding a light transmissive material on the extraction portion, and the light so as to surround the recess at least on the side of the lens portion A method for manufacturing a light emitting element, comprising a fifth step of forming a light guide portion by molding a reflective resin material. 回路基板上に発光ダイオードチップを実装する工程と、該発光ダイオードチップの側方を取り囲み、かつ、取り囲まれた空間の水平断面積が回路基板に近い程小さくなるように光反射性樹脂材料を成形して光ガイド部を形成する工程と、前記取り囲まれた空間に、光透過性材料を成形することによりレンズ部を形成する工程を含む、発光ダイオードの製造方法。   The step of mounting the light-emitting diode chip on the circuit board, and the light-reflective resin material is formed so that the horizontal cross-sectional area of the enclosed space is smaller as it is closer to the circuit board. And forming a light guide part, and forming a lens part by molding a light transmissive material in the enclosed space. 回路基板上の金属層に凹部を設けることにより反射構造を形成する工程をさらに含む、請求項19に記載の方法。   The method of claim 19, further comprising forming a reflective structure by providing a recess in a metal layer on the circuit board. 回路基板上に、発光ダイオードチップの位置に対応した開口を有する別の回路基板を接合することによって反射構造を形成する工程をさらに含む、請求項19に記載の方法。   20. The method of claim 19, further comprising forming a reflective structure on the circuit board by bonding another circuit board having an opening corresponding to the location of the light emitting diode chip.
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