JP2007318109A5 - - Google Patents
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- Publication number
- JP2007318109A5 JP2007318109A5 JP2007115524A JP2007115524A JP2007318109A5 JP 2007318109 A5 JP2007318109 A5 JP 2007318109A5 JP 2007115524 A JP2007115524 A JP 2007115524A JP 2007115524 A JP2007115524 A JP 2007115524A JP 2007318109 A5 JP2007318109 A5 JP 2007318109A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- isolation region
- element isolation
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 claims 31
- 239000004065 semiconductor Substances 0.000 claims 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 12
- 239000012535 impurity Substances 0.000 claims 10
- 230000015572 biosynthetic process Effects 0.000 claims 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007115524A JP5271504B2 (ja) | 2006-04-28 | 2007-04-25 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006126993 | 2006-04-28 | ||
| JP2006126993 | 2006-04-28 | ||
| JP2007115524A JP5271504B2 (ja) | 2006-04-28 | 2007-04-25 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007318109A JP2007318109A (ja) | 2007-12-06 |
| JP2007318109A5 true JP2007318109A5 (enExample) | 2010-06-17 |
| JP5271504B2 JP5271504B2 (ja) | 2013-08-21 |
Family
ID=38851656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007115524A Expired - Fee Related JP5271504B2 (ja) | 2006-04-28 | 2007-04-25 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5271504B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102153034B1 (ko) * | 2009-12-04 | 2020-09-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN105789321B (zh) * | 2010-03-26 | 2019-08-20 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| KR20130102581A (ko) | 2010-09-03 | 2013-09-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 및 반도체 장치의 제조 방법 |
| TWI567985B (zh) * | 2011-10-21 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| CN103077948B (zh) * | 2011-10-25 | 2015-09-30 | 旺宏电子股份有限公司 | 记忆体结构及其制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0715770A1 (en) * | 1993-09-03 | 1996-06-12 | National Semiconductor Corporation | Planar isolation method for use in fabrication of microelectronics |
| JPH0832072A (ja) * | 1994-07-13 | 1996-02-02 | Fuji Xerox Co Ltd | 半導体装置 |
| JPH1187545A (ja) * | 1997-07-08 | 1999-03-30 | Sony Corp | 半導体不揮発性記憶装置およびその製造方法 |
-
2007
- 2007-04-25 JP JP2007115524A patent/JP5271504B2/ja not_active Expired - Fee Related
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