JP2007317739A - Semiconductor device mounting body - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device mounting body for effectively reducing an inductance of a power supply or a ground path with a simplified structure. <P>SOLUTION: The semiconductor device is constituted in the structure that a semiconductor chip 3 is mounted on a flexible base material 1f on which a conductor wire 1d is arranged, and that a signal is outputted to an external side from a semiconductor chip through the conductor wire. In this semiconductor device, a grounding terminal of the semiconductor chip is mounted in such manner that it is grounded to a conductor chassis 5 of a set device for which the function of semiconductor chip is used. The grounding terminal of the semiconductor chip is connected to a ground wire of the conductor wire, the semiconductor device is coupled with the conductor chassis via a metal heat radiating plate 2, and the grounding wire is arranged to be in contact with the metal heat radiating plate. Accordingly, the grounding terminal is grounded to the conductor chassis via the conductor wire and metal heating radiating plate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a mounting body for a semiconductor device, and more particularly to a structure effective for reducing the inductance of a ground and a power wiring in a TCP (tape carrier package) type package semiconductor device frequently used for display applications such as a television.

  In recent years, in the TCP type package semiconductor device, the number of input / output pins has been remarkably increased with the integration of semiconductor elements. In addition, the switching time of the output signal has been shortened with the increase in the speed of the semiconductor device. When the output signal is switched instantaneously, a sudden current change occurs in the power supply path, and a voltage is generated due to the influence of the inductance of the power supply path. When such switching noise occurs at the same time, the potentials of the power supply VDD and the ground VSS of the semiconductor device may fluctuate temporarily and the semiconductor device may malfunction.

  On the other hand, in the case of a semiconductor device having two or more conductor layers, it is effective to provide a conductor layer on the surface of the TCP tape, press the metal heat sink with a screw through a through hole, and then connect it to the panel chassis. Inductance is reduced. A technique for reducing inductance using a similar short-circuit pin is also described in Patent Document 1, for example.

  FIG. 9 is a plan view of a conventional TCP type package semiconductor device. FIG. 10 is a cross-sectional view showing a state where the TCP type package semiconductor device of FIG. 9 is attached to the panel chassis 5. The position of the cross section is the position indicated by the line C-C ′ in FIG. 9, but the TCP type package semiconductor device is shown in a state where the top and bottom are inverted from the state shown in FIG. 9.

  In the tape carrier 1B, conductor wiring is provided on the tape carrier substrate 1f, a part thereof is covered with a solder resist 1c (indicated by dots), and the outer leads 1a and 1b are exposed. First holes 1g and 1h are formed in the tape carrier substrate 1f. The metal heat sink 2 is formed with holes 2c and 2d for fixing to the panel chassis and second holes 2e and 2f. A semiconductor chip 3 is mounted on the tape carrier 1B, and a metal heat radiating plate 2 is attached by through screws 4g and 4h. The metal heat sink 2 is fixed to the panel chassis 5 by heat sink fixing screws 4e and 4f. The semiconductor chip 3 is in contact with the metal heat sink 2 via grease 6. The mounting portion of the semiconductor chip 3 on the tape carrier 1B is filled with a sealing resin (chip coat resin) 8b. The adhesive tape 9 is used for fixing the metal heat radiating plate 2 to the tape carrier 1B.

  In the manufacturing process of this TCP type semiconductor device, after the semiconductor chip 3 is connected to the tape carrier 1B in the reel mounting state by the inner lead bonder, the sealing resin 8b is applied on the semiconductor chip 3, and after this resin is cured, The semiconductor device is punched out to a necessary outer size from the reel mounting state (not shown). At this time, the ground terminal in the semiconductor chip 3 is connected to the inner lead of the tape carrier 1B. First lands 1g and 1h are provided in lands 1i and 1j provided on the inner lead extension. Next, the first holes 1g and 1h of the punched tape carrier 1B and the second holes 2e and 2f of the metal heat sink 2 are aligned, and the tape carrier 1B is attached to the metal heat sink using the through screws 4g and 4h. Fix to 2. The through screws 4g and 4h simultaneously have a function of a shorting screw or a conductor shaft for electrically connecting the lands 1i and 1j provided on the inner lead extension and the metal heat radiating plate 2. At this time, the semiconductor chip 3 is pressed against the metal heat radiating plate 2 through the grease 6, and the metal heat radiating plate 2 and the tape carrier 1 </ b> B are fixed using the adhesive tape 9.

Next, in this state, the metal heat radiating plate 2 is fixed to the panel chassis 5 by using the through screws 4e and 4f penetrating the holes 2c and 2d of the metal heat radiating plate 2. By this fixing, the ground terminal of the semiconductor chip 3 is electrically grounded. Further, the direction in which the semiconductor device is attached is always set so that the semiconductor chip 3 is disposed between the metal heat sink 2 and the panel chassis 5.
JP-A-8-139258 Japanese Patent No. 3565835

  However, the inductance reduction technique in the semiconductor device as described above has the following problems.

  That is, the method of providing a conductor layer on the surface of the TCP tape, connecting the through hole and the metal heat sink, and fixing it to the panel chassis via the metal heat sink increases the number of parts and the number of mounting steps, resulting in a complicated structure. End up.

  An object of the present invention is to provide a semiconductor device mounting body capable of efficiently reducing inductance in a power supply or ground path using a simple structure.

  The mounting body of the semiconductor device of the present invention has a semiconductor chip mounted on a flexible base substrate on which conductor wiring is arranged, connected to the conductor wiring, and outputs a signal from the semiconductor chip to the outside through the conductor wiring. It is assumed that the semiconductor device configured as described above is attached to the conductor chassis of the set device in which the function of the semiconductor chip is used so that the grounding terminal of the semiconductor chip is grounded to the conductor chassis. .

  In order to solve the above-described problem, in the mounting structure of the semiconductor device according to the first configuration of the present invention, the grounding terminal of the semiconductor chip is connected to a ground wiring in the conductor wiring, and the semiconductor device includes a metal heat sink. And the ground wiring is disposed so as to contact the metal heat sink, so that the ground terminal is connected to the conductor chassis via the conductor wire and the metal heat sink. It is grounded.

  In the mounting structure of the semiconductor device according to the second configuration of the present invention, the grounding terminal of the semiconductor chip is connected to a ground wiring in the conductor wiring, and the ground wiring contacts the conductor chassis in the semiconductor device. The grounding terminal is grounded to the conductor chassis via the conductor wiring by being arranged in this manner and coupled to the conductor chassis.

  According to the mounting body of the semiconductor device of the present invention, the outer leads can be connected by electrically connecting the ground wiring in the conductor wiring to the conductor chassis via the metal heat sink or directly to the conductor chassis. It can be grounded at the shortest distance without intervening, and the ground wiring in the semiconductor device can be reduced in inductance with a simple structure with a small number of components.

  Moreover, according to the mounting structure of the semiconductor device having the first configuration, the metal heat radiating plate surface can be pressed against the entire surface of the conductor chassis, so that a rapid increase in temperature of the semiconductor chip can be suppressed and more stable heat dissipation characteristics can be obtained. Can be secured.

  In the semiconductor device package of the first configuration of the present invention, it is preferable that the semiconductor device, the metal heat sink, and the conductor chassis are coupled by a common through shaft.

  Moreover, it is preferable that a metal protrusion is formed on the ground land pattern portion that forms the ground wiring, and the conductor wiring is in contact with the metal heat dissipation plate via the metal protrusion. By providing a metal protrusion on the grounding land pattern for grounding, when the conductor wiring is pressed against the metal heat sink via the base substrate with the penetrating shaft, the protrusion absorbs the pressing torque of the penetrating shaft and more stable electrical conduction Can do. Accordingly, fluctuations in the ground potential or the power supply potential in the semiconductor device can be suppressed.

  In the mounting structure of the semiconductor device according to the second configuration of the present invention, it is preferable that the semiconductor device and the conductor chassis are coupled by a through shaft.

  Moreover, it is preferable that a metal projection is formed on a grounding land pattern portion that forms the ground wiring, and the conductor wiring is in contact with the conductor chassis via the metal projection. The effect by this is the same as that of the mounting body of the semiconductor device having the first configuration described above.

  In the semiconductor device mounting body having any one of the above-described structures, it is preferable that the coupling through-shaft has a shape that can be attached and detached in a one-touch manner.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a plan view showing a structure of a TCP type package semiconductor device according to the first embodiment of the present invention, and shows a state before insertion of a short-circuit screw (through shaft). FIG. 2 is a plan view showing a state after short-circuit screws, that is, through screws 4a and 4b are inserted in the TCP type package semiconductor device. 2 shows the structure of the tape carrier 1A and the two semiconductor chips 3 that are hidden under the metal heat sink 2 in FIG. FIG. 3 is a cross-sectional view showing a state in which a short-circuit screw is inserted and fixed to the panel chassis 5 in the TCP type package semiconductor device. The position of the cross section is the AA ′ cross section of FIG. 2, but the tape carrier 1 </ b> A is shown upside down from the state of FIGS. 1 and 2. Elements similar to those shown in FIGS. 9 and 10 are denoted by the same reference numerals, and description thereof will not be repeated.

  As shown in FIG. 3, the two semiconductor chips 3 are flip-chip mounted on the surface of the tape carrier 1A face-down (the surface of the semiconductor chip faces down). The gap between the tape carrier 1A and the semiconductor chip 3 is filled with an underfill resin (or non-conductive paste) 8 and cured after resin coating. In this way, a TCP in the form of a COF (chip on film) is formed. In this state, the tape carrier is formed in a reel mounting state (not shown). Thereafter, as shown in FIGS. 1 and 2, only a necessary area of the tape carrier 1A is punched out using a mold. To complete the semiconductor device.

  Next, the heat radiation grease 6 is applied to the semiconductor chip mounting position on the metal heat radiating plate 2, and the back surface of the semiconductor chip 3 of the semiconductor device is pressed against the metal heat radiating plate 2, and at the same time, the first hole 1g on the tape carrier 1A. 1h and the second holes 2a and 2b of the metal heat radiating plate 2 are aligned, and the tape carrier 1A and the metal heat radiating plate 2 are fixed to each other using the adhesive tape 9. Furthermore, after outer lead bonding (not shown) of the display panel (not shown) and the outer lead 1a of the semiconductor device (not shown), the first holes 1g and 1h of the tape carrier 1 and the second holes 2a of the metal heat radiating plate 2, The semiconductor device is fixed to the panel chassis 5 as a conductor through the through screws 4a and 4b through the through holes 2b.

  Around the first holes 1g and 1h of the tape carrier 1A, a tape carrier ground wiring is formed by a land of a copper foil 1d extending from the ground terminal of the semiconductor chip 3 through an inner lead, for protecting the tape carrier wiring. The solder resist 1c is not applied on the land. Further, the adhesive tape 9 is also opened with a predetermined size around each hole of the tape carrier 1A and the metal heat radiating plate 2, and by screwing the through screws 4a and 4b into the panel chassis 5 with a predetermined torque, The head and the screw washer press the back surface of the tape carrier 1A, and the copper foil 1d of the tape carrier ground wiring is pressed against the metal heat radiating plate 2 through the tape carrier base 1f, and the ground terminal of the semiconductor chip 3 and the panel chassis 5 Forms a path through which.

  The contact resistance when pressing the copper foil 1d of the tape carrier ground wiring against the metal heat sink 2 through the through screw washer and the tape carrier base 1f with the through screws 4a and 4b is managed within the range of 50 mmΩ to 100 mmΩ. To do. Depending on the tightening torque of the penetrating screws 4a and 4b and the boss screw thread machining state on the panel chassis 5, the contact resistance with the penetrating screws 4a and 4b may fluctuate. Control. As a result, the ground current can be effectively released to the panel chassis 5.

  As described above, the path through which the ground current flows is a path that falls directly from the semiconductor chip ground terminal to the panel chassis through the through screw through the tape carrier ground wiring. On the other hand, there is also a ground current that flows from the outer lead 1b to the outside via a connector or ACF and via a substrate wiring (not shown) via the tape carrier ground wiring. Since the former clearly has a shorter path through which the ground current flows, the configuration of the present embodiment can effectively suppress unnecessary radiated electromagnetic noise.

(Embodiment 2)
FIG. 4 is a cross-sectional view showing the structure of the TCP type package semiconductor device according to the second embodiment of the present invention. The planar structure of the TCP type package semiconductor device in the present embodiment is the same as that shown in FIGS. 1 and 2, and FIG. 4 is a cross-sectional view taken along the line AA ′ in FIG. . This figure shows a cross section after inserting short-circuit screws, that is, through screws 4a and 4b. However, the metal heat sink 2 is not attached.

  In the present embodiment, the state until the semiconductor chip 3 is mounted on the tape carrier 1A and the semiconductor device is separated into pieces is the same as in the first embodiment, but in this embodiment, the metal heat sink 2 is replaced with a semiconductor. It is directly attached to the panel chassis 5 without being attached to the apparatus.

  That is, when the outer leads 1a (see FIG. 1) of the separated semiconductor device are bonded to the display panel (not shown) by outer lead bonding (not shown), the semiconductor chip 3 on the panel chassis 5 is placed. The countersinks 5a and 5b of the panel chassis 5 are provided at positions where the heat radiation grease 6 is applied. Adhering the surface of the tape carrier 1A of the semiconductor device and the panel chassis 5 with the adhesive tape 9 while aligning the positions of the semiconductor chip 3 and the chassis countersinks 5a and 5b and pressing the mounting portion of the semiconductor chip 3 from the back surface of the tape carrier 1A Let Next, as in the first embodiment, the copper foil 1d on the land around the holes 1g and 1h on the tape carrier from which the ground terminal of the semiconductor chip 3 is drawn and the panel chassis 5 are passed through the through screw as in the first embodiment. Conduction is performed using 4a and 4b.

  According to the present embodiment, the process for attaching the semiconductor device to the display panel and the panel chassis 5 is complicated, but can be grounded through the through screws 4a and 4b in the simplest manner. Similar to the first embodiment, the contact resistance when pressing the copper foil 1d of the tape carrier ground wiring against the panel chassis 5 through the through screw washer and the tape carrier substrate 1f by the through screws 4a and 4b is 50 mmΩ to 100 mΩ. Manage in the range. Here, the through screw tightening torque, the boss screw thread shape processing state on the panel chassis 5 side, the contact resistance of the through screw, and the flatness of the contact surface of the panel chassis 5 with which the tape carrier ground terminal wiring comes into contact fluctuate the contact resistance. Need to be managed in the same way.

(Embodiment 3)
FIG. 5 is a cross-sectional view showing the structure of the TCP type package semiconductor device according to the third embodiment of the present invention. The planar structure of the TCP type package semiconductor device in the present embodiment is the same as that shown in FIGS. 1 and 2, and FIG. 5 is a cross-sectional view taken along the line AA ′ in FIG. . This figure shows a cross section after inserting short-circuit screws, that is, through screws 4a and 4b.

  In the third embodiment, the metal protrusion 1e is formed on the copper foil 1d on the peripheral land of the first holes 1g and 1h of the tape carrier 1A at the tape carrier forming stage. The metal protrusion 1e can be formed using, for example, the method described in Patent Document 2.

  For example, first, after forming the wiring pattern of the tape carrier 1A, a photosensitive photoresist is applied again on the entire surface, and the resist is opened only in the land portions around the first holes 1g and 1h, thereby the copper foil 1d in the land portions. Is exposed (not shown). Further, the exposed conductor portion is subjected to metal plating to form a metal protrusion 1e having a height of about 20 μm.

  Using the tape carrier 1A thus manufactured, the semiconductor chip 3 is mounted and the semiconductor device and the metal heat radiating plate 2 are bonded in the same manner as described in the first embodiment. Further, as in the first embodiment, by pressing from the back surface of the tape carrier 1A with the through screws 4a and 4b, the copper foil 1d in the land portion is pressed against the metal heat conducting plate 2 via the metal protrusion 1e, and The metal heat conducting plate 2 is pressed against the panel chassis 5. Since the copper foil 1d in the lands around the first holes 1g and 1h is pressed against the metal heat radiating plate 2 through the metal protrusions 1e, it is possible to achieve conduction not by surface contact but by point and line contact. . Thereby, fluctuation factors such as the tightening torque of the through screws 4a and 4b and the inclination of the through screws can be absorbed by the metal protrusion 1e.

(Embodiment 4)
FIG. 6 is a cross-sectional view showing the structure of the TCP type package semiconductor device according to the fourth embodiment of the present invention. The planar structure of the TCP type package semiconductor device in the present embodiment is the same as that shown in FIGS. 1 and 2, and FIG. 6 is a cross-sectional view taken along the line AA ′ in FIG. . The figure shows a cross section after inserting the penetration pins 4c and 4d.

  In the present embodiment, the through pins 4c and 4d are different from the through screws 4a and 4b in the above-described embodiment. The through pins 4c and 4d are non-conductors using plastic as a main material. At the tip of the through pins 4c and 4d, a return 10 is formed of the same material so that it does not come off after being inserted. In addition, in the pressing portion 11 of the through pins 4c and 4d, only the periphery of the first holes 1g and 1h on the tape carrier 1A side is wide like a washer. Furthermore, a hook 12 having an index finger thickness is provided so that it can be pushed in by hand without using a screwdriver or the like.

  Using the through pins 4c and 4d, as in the method described in the first embodiment, the through pins 4c and 4d are inserted into the first holes 1g and 1h, and the periphery of the first holes 1g and 1h of the tape carrier 1A. The copper foil 1d is pressed against the metal heat radiating plate 2 to make it conductive.

  In the first to third embodiments, since the through screw is made of metal, the contact resistance value of the through screw can be stabilized by numerically controlling the tightening torque of the through screw. On the other hand, in this Embodiment, it adjusts so that the tensile strength at the time of pulling out the penetration pins 4c and 4d may be set to 5N-10N. The contact resistance between the copper foil 1d of the tape carrier ground wiring and the metal heat sink 2 is also adjusted in the range of 50 mmΩ to 100 mmΩ.

  In the above description of the third and fourth embodiments, the description is based on the configuration of the first embodiment. However, a combination with a configuration that does not use the metal heat sink 2 as in the second embodiment is also possible. That is, the combination of Embodiment 2 and Embodiment 3, Embodiment 2 and Embodiment 4, or Embodiment 2, 3, and 4 is also possible.

(Embodiment 5)
FIG. 7 is a plan view showing a structure of the TCP type package semiconductor device according to the fifth embodiment of the present invention, and shows a state before insertion of the short screw. The structure of the tape carrier 1B hidden under the metal heat sink 2 and the two semiconductor chips 3 are shown. FIG. 8 is a cross-sectional view showing a state in which a short-circuit screw is inserted and fixed to the panel chassis 5 in the TCP type package semiconductor device. The position of the cross-section is the BB ′ cross-section of FIG. 7, but the tape carrier 1B is shown in a state where the top and bottom are reversed from the state of FIG.

  In the above-described first to fourth embodiments, the case where the tape carrier 1A has a COF (chip on film) structure of a two-layer tape carrier has been described as an example. In contrast, in the fifth embodiment, the tape carrier 1B is a three-layer tape carrier, and a device hole 13 is formed by punching the tape carrier substrate 1f. When the semiconductor chip 3 is placed on the tape carrier 1B, flying inner leads (not shown) are connected to the semiconductor chip 3.

  In the present embodiment, the two semiconductor chips 3 are gang-bonded and mounted on the surface of the tape carrier 1B face down (the semiconductor chip surface faces downward). The chip coat resin 8b is filled on the mounting portion of the tape carrier 1B and the semiconductor chip 3 and cured. In this state, the tape carrier is formed in a reel mounting state (not shown). Thereafter, only a necessary area of the tape carrier 1B shown in FIG. Complete.

  Next, the heat radiation grease 6 is applied to the semiconductor chip mounting position on the metal heat radiating plate 2, and the back surface of the semiconductor chip 3 of the semiconductor device is pressed against the metal heat radiating plate 2, and at the same time, the first hole 1g on the tape carrier 1B. 1h and the second holes 2a and 2b of the metal heat radiating plate 2 are aligned and fixed using an adhesive tape 9. Furthermore, after outer lead bonding (not shown) of the display panel (not shown) and the outer lead 1a of the semiconductor device (not shown), the first holes 1g and 1h of the tape carrier 1 and the second holes 2a of the metal heat radiating plate 2, The semiconductor device is fixed to the panel chassis 5 as a conductor through the through screws 4a and 4b through 2b.

  Around the first holes 1g and 1h of the tape carrier 1B, a land of copper foil 1d extending from the ground terminal of the semiconductor chip 3 through the inner lead is formed, and the solder resist 1c for protecting the tape carrier wiring is the land It is not applied on top. Furthermore, the adhesive tape 9 is opened with a predetermined size around each hole of the tape carrier 1B and the metal heat sink 2. Accordingly, by screwing the through screws 4a and 4b into the panel chassis 5 with a predetermined torque, the screw head and the screw washer press the back surface of the tape carrier 1B, and the copper foil 1d is connected to the metal heat radiating plate 2 via the tape carrier substrate 1f. , A path through which the ground terminal of the semiconductor chip 3 and the panel chassis 5 are conducted is formed.

  The contact resistance when pressing the tape carrier ground wiring against the metal heat sink via the through screw washer and the tape carrier substrate with the through screw is managed within the range of 50 mmΩ to 100 mmΩ as a guideline, as in the first to fourth embodiments. To do.

  The configuration of the fifth embodiment can also be implemented in combination with the second to fourth embodiments as appropriate.

  According to the semiconductor device package of the present invention, the inductance of the ground wiring in the semiconductor device can be greatly reduced, it is resistant to simultaneous switching noise, has a good heat dissipation effect, and is useful for display applications such as televisions.

The top view which shows the structure of the TCP type package semiconductor device in Embodiment 1 of this invention The top view shown through the lower part of the metal heat sink 2 of the same TCP type package semiconductor device Sectional drawing which shows the same TCP type package semiconductor device in the position along the A-A 'line of FIG. Sectional drawing which shows the structure of the TCP type package semiconductor device in Embodiment 2 of this invention Sectional drawing which shows the structure of the TCP type package semiconductor device in Embodiment 3 of this invention Sectional drawing which shows the structure of the TCP type package semiconductor device in Embodiment 4 of this invention The top view which shows the structure of the TCP type package semiconductor device in Embodiment 5 of this invention Sectional drawing which shows the same TCP type package semiconductor device in the position along the B-B 'line of FIG. Plan view of conventional TCP type package semiconductor device Sectional drawing which shows the same TCP type package semiconductor device in the position along the C-C 'line of FIG.

Explanation of symbols

1A, 1B Tape carrier 1a, 1b Outer lead 1c Solder resist 1d Wiring foil 1e Metal protrusion 1f on wiring Tape carrier substrate 1g, 1h First hole 1i, 1j Land 2 Metal heat sink 2a, 2b, 2e, 2f First 2 holes 2c, 2d holes (for fixing to the panel chassis)
3 Semiconductor chip 4a, 4b, 4g, 4h Through screw 4c, 4d Through pin 4e, 4f Heat sink fixing screw 5 Panel chassis 5a, 5b Chassis counterbore 6 Grease 7 Metal protrusion 8a Sealing resin (non-conductive paste)
8b Sealing resin (chip coat resin)
9 Adhesive tape 10 Return 11 Holding part 12 Hook 13 Device hole

Claims (7)

On a flexible base substrate on which conductor wiring is arranged, a semiconductor chip is mounted and connected to the conductor wiring, and a semiconductor device configured to output a signal from the semiconductor chip to the outside through the conductor wiring, In the mounting body of the semiconductor device attached to the conductor chassis of the set device where the function of the semiconductor chip is used, so that the grounding terminal of the semiconductor chip is grounded to the conductor chassis,
The grounding terminal of the semiconductor chip is connected to a ground wiring in the conductor wiring;
The semiconductor device is coupled to the conductor chassis via a metal heat radiating plate, and is arranged so that the ground wiring is in contact with the metal heat radiating plate, whereby the ground terminal is connected to the conductor wiring and the metal heat radiating plate. A semiconductor device mounting body, characterized in that it is grounded to the conductor chassis via a plate.   The semiconductor device package according to claim 1, wherein the semiconductor device, the metal heat radiating plate, and the conductor chassis are coupled by a common penetrating shaft.   3. The semiconductor device mounting according to claim 1, wherein a metal protrusion is formed on a ground land pattern portion that forms the ground wiring, and the conductor wiring is in contact with the metal heat sink through the metal protrusion. body. On a flexible base substrate on which conductor wiring is arranged, a semiconductor chip is mounted and connected to the conductor wiring, and a semiconductor device configured to output a signal from the semiconductor chip to the outside through the conductor wiring, In the mounting body of the semiconductor device attached to the conductor chassis of the set device where the function of the semiconductor chip is used, so that the grounding terminal of the semiconductor chip is grounded to the conductor chassis,
The grounding terminal of the semiconductor chip is connected to a ground wiring in the conductor wiring;
The semiconductor device is arranged so that the ground wiring is in contact with the conductor chassis and coupled to the conductor chassis, so that the grounding terminal is grounded to the conductor chassis via the conductor wiring. A mounted body of a semiconductor device.   The semiconductor device package according to claim 1, wherein the semiconductor device and the conductor chassis are coupled to each other by a through shaft.   The semiconductor device mounting body according to claim 4, wherein a metal protrusion is formed on a ground land pattern portion forming the ground wiring, and the conductor wiring is in contact with the conductor chassis via the metal protrusion. .   The semiconductor device package according to claim 2, wherein the coupling through-shaft has a one-touch type detachable shape.

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