JP2007297228A - Method for manufacturing polished glass substrate - Google Patents
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- JP2007297228A JP2007297228A JP2006124970A JP2006124970A JP2007297228A JP 2007297228 A JP2007297228 A JP 2007297228A JP 2006124970 A JP2006124970 A JP 2006124970A JP 2006124970 A JP2006124970 A JP 2006124970A JP 2007297228 A JP2007297228 A JP 2007297228A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
- C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0095—Solution impregnating; Solution doping; Molecular stuffing, e.g. of porous glass
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
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Abstract
Description
本発明は、フッ酸を含む化学研磨液によりガラス基板を浸漬し、所定のガラス基板厚さまで表面研磨する研磨ガラス基板の製造方法に関し、特に液晶ディスプレイ用ガラス基板の製造に適した研磨ガラス基板の製造方法に関する。 The present invention relates to a method for producing a polished glass substrate in which a glass substrate is immersed in a chemical polishing solution containing hydrofluoric acid and polished to a predetermined glass substrate thickness, and in particular, a polished glass substrate suitable for producing a glass substrate for a liquid crystal display. It relates to a manufacturing method.
近年、液晶ディスプレイ用ガラス基板(以下単に「ガラス基板」という)は、ディスプレイ製品のエネルギ−消費量を低減する目的から、ガラス基板の厚さ(以下単に「ガラス厚さ」という)をできるだけ薄くすることが望まれている。そのため従来から、フッ酸を含有する化学研磨液により、ガラス基板の片面もしくは両面を化学研磨して、ガラス厚さを薄型化する研磨ガラス基板の製造方法が行われている。 In recent years, glass substrates for liquid crystal displays (hereinafter simply referred to as “glass substrates”) are made as thin as possible (hereinafter simply referred to as “glass thickness”) for the purpose of reducing the energy consumption of display products. It is hoped that. Therefore, conventionally, a method for producing a polished glass substrate in which one side or both sides of a glass substrate is chemically polished with a chemical polishing solution containing hydrofluoric acid to reduce the glass thickness has been performed.
例えば特許文献1(特開2003−20255号公報)には、フッ酸と、塩酸、硫酸、リン酸、硝酸から選ばれる1種以上の無機酸とを含有する化学加工液による研磨が示され、実施例として、フッ酸5%、塩酸10%、硝酸5%を含有する化学加工液を使用して所定のガラス基板厚さになるまで研磨する例が示されている。しかしながら、このような従来技術においては、1工程で所定のガラス基板厚さになるまで研磨するので、所望のガラス厚さに研磨加工することは可能であるが、ガラス基板表面(以下単に「ガラス表面」という)の平滑性に問題があった。特に、ガラス表面に元々存在するマイクロクラックが、化学研磨の過程で大きな窪み(以下「ディンプル」という)に成長し、製品不良を起こすという大きな問題があり、上記の従来の技術ではこのようなディンプルの発生を抑制するのは困難であった。 For example, Patent Document 1 (Japanese Patent Laid-Open No. 2003-20255) shows polishing with a chemical working solution containing hydrofluoric acid and one or more inorganic acids selected from hydrochloric acid, sulfuric acid, phosphoric acid, and nitric acid, As an example, an example is shown in which a chemical processing solution containing 5% hydrofluoric acid, 10% hydrochloric acid, and 5% nitric acid is used to polish to a predetermined glass substrate thickness. However, in such a conventional technique, polishing is performed until a predetermined glass substrate thickness is obtained in one step. Therefore, polishing to a desired glass thickness is possible, but the glass substrate surface (hereinafter simply referred to as “glass”). There was a problem with the smoothness of the “surface”. In particular, the micro cracks originally present on the glass surface grow into large depressions (hereinafter referred to as “dimples”) in the course of chemical polishing, and cause a product defect. It was difficult to suppress the occurrence of.
このような問題点を解決するための手段として、例えば特許文献2(特開2005−343742号公報)には、フッ酸10〜30重量%および硫酸20〜50重量%を含有する表面研磨液を用い、1μm/sec以上の研磨速度で数秒間研磨することにより、直径40μm以上の傷が直径100μm以上に拡大することを抑制する前研磨としての表面研磨を行い、その後中〜低濃度のフッ酸を含む後研磨液に浸漬して、所定のガラス基板厚さになるまで後研磨する方法が示されている。しかしこの方法によれば、前研磨としての表面研磨において傷の拡大を抑制することは可能であるが、研磨液との接触時間が短いため、ガラス基板全体を均一に研磨するようにコントロールするのが困難であり、平滑部分において数μmの段差を生じ易く、これが後研磨において拡大するという問題点がある。 As means for solving such problems, for example, Patent Document 2 (Japanese Patent Laid-Open No. 2005-343742) discloses a surface polishing liquid containing 10 to 30% by weight of hydrofluoric acid and 20 to 50% by weight of sulfuric acid. Using surface polishing as a pre-polishing that suppresses the growth of scratches with a diameter of 40 μm or more to a diameter of 100 μm or more by polishing at a polishing rate of 1 μm / sec or more for several seconds, and thereafter medium to low concentration hydrofluoric acid A method of post-polishing until a predetermined glass substrate thickness is obtained by immersing in a post-polishing liquid containing. However, according to this method, it is possible to suppress the spread of scratches in the surface polishing as the pre-polishing, but since the contact time with the polishing liquid is short, the entire glass substrate is controlled to be uniformly polished. However, there is a problem that a step of several μm is likely to occur in a smooth portion, which is enlarged in post-polishing.
また特許文献3(特開2004−77640号公報)には、ガラス基板の化学研磨において化学研磨速度が異なる複数の研磨液を用い、研磨速度が早い液から遅い液の順で数回研磨処理することにより、ディンプルの発生を抑制する方法が提案されている。しかしこの方法によれば、ディンプルの発生を抑制することは可能であっても、多数の工程を踏む必要があり、生産性、設備コスト等の面から経済的に不利であるという問題点がある。 Further, in Patent Document 3 (Japanese Patent Laid-Open No. 2004-77640), a plurality of polishing liquids having different chemical polishing rates are used in chemical polishing of a glass substrate, and polishing is performed several times in order from a liquid with a high polishing speed to a liquid with a low polishing speed. Thus, a method for suppressing the generation of dimples has been proposed. However, according to this method, even if it is possible to suppress the generation of dimples, it is necessary to take a number of steps, which is disadvantageous in terms of productivity, equipment cost, etc. .
また特許文献4(特開2005−11894号公報)には、ガラス基板を化学研磨する際、研磨液と反応しない液体(不活性液体)に浸漬して、ガラス表面に存在する細孔に不活性液体を充填してから化学研磨することにより、細孔がディンプルに成長するのを抑制する方法が提案されており、不活性液体の例としてペルフルオロアルキル化合物等が示されている。しかしこの方法によれば、ディンプルの発生を抑制することは可能であっても、有機化合物を含有する排水が発生するため、その排水処理が必要になるという問題点がある。
本発明の課題は、かかる従来技術の問題点を解消し、ディンプルの成長を抑制してガラス基板を表面研磨し、平滑なガラス表面を有するガラス基板得ることができる研磨ガラス基板の製造方法、ならびにこれにより製造された研磨ガラス基板を提供することである。 An object of the present invention is to solve the problems of the prior art, suppress the dimple growth and polish the surface of the glass substrate to obtain a glass substrate having a smooth glass surface. It is providing the polishing glass substrate manufactured by this.
本発明は次の研磨ガラス基板の製造方法、ならびに研磨ガラス基板である。
(1) フッ酸を含有する研磨液にガラス基板を浸漬し、表面を化学研磨する研磨ガラス基板の製造方法であって、
40〜90重量%の硫酸および0.4〜4重量%のフッ酸を含有する表面研磨液にガラス基板を浸漬して表面研磨することを特徴とする研磨ガラス基板の製造方法。
(2) フッ酸を含有する研磨液にガラス基板を浸漬し、表面を化学研磨する研磨ガラス基板の製造方法であって、
40〜90重量%の硫酸および0.4〜4重量%のフッ酸を含有する表面研磨液にガラス基板を浸漬して表面研磨後、
2〜30重量%のフッ酸を含有する後研磨液に前記ガラス基板を浸漬して、所定のガラス基板厚さになるまで後研磨することを特徴とする研磨ガラス基板の製造方法。
(3) 表面研磨液が、50〜85重量%の硫酸および0.5〜4重量%のフッ酸を含有する研磨液である上記(1)または(2)記載の方法。
(4) ガラス基板が液晶ディスプレイ用ガラス基板である上記(1)ないし(3)のいずれかに記載の方法。
(5) 上記(1)ないし(4)のいずれかに記載の方法により製造された研磨ガラス基板。
The present invention provides the following method for producing a polished glass substrate and a polished glass substrate.
(1) A method for producing a polished glass substrate in which a glass substrate is immersed in a polishing liquid containing hydrofluoric acid, and the surface is chemically polished,
A method for producing a polished glass substrate, comprising: dipping a glass substrate in a surface polishing solution containing 40 to 90% by weight sulfuric acid and 0.4 to 4% by weight hydrofluoric acid to perform surface polishing.
(2) A method for producing a polished glass substrate in which a glass substrate is immersed in a polishing liquid containing hydrofluoric acid, and the surface is chemically polished,
After surface polishing by immersing the glass substrate in a surface polishing liquid containing 40 to 90% by weight sulfuric acid and 0.4 to 4% by weight hydrofluoric acid,
A method for producing a polished glass substrate, comprising immersing the glass substrate in a post-polishing liquid containing 2 to 30% by weight of hydrofluoric acid and post-polishing until a predetermined glass substrate thickness is reached.
(3) The method according to (1) or (2) above, wherein the surface polishing liquid is a polishing liquid containing 50 to 85% by weight sulfuric acid and 0.5 to 4% by weight hydrofluoric acid.
(4) The method according to any one of (1) to (3) above, wherein the glass substrate is a glass substrate for liquid crystal display.
(5) A polished glass substrate produced by the method according to any one of (1) to (4) above.
本発明で製造する研磨ガラス基板としては、液晶ディスプレイ、有機エレクトロルミネッセンスディスプレイ、プラズマパネルディスプレイ等のフラットパネルディスプレイ用のガラス基板があげられるが、特に液晶ディスプレイ用のガラス基板が適している。ガラス基板の材質としてはアルミノホウケイ酸ガラス基板など、上記のガラス基板に一般に用いられているものがすべて研磨の対象となる。 Examples of the polished glass substrate produced in the present invention include glass substrates for flat panel displays such as liquid crystal displays, organic electroluminescence displays, and plasma panel displays. In particular, glass substrates for liquid crystal displays are suitable. As a material of the glass substrate, all materials generally used for the above glass substrate such as an aluminoborosilicate glass substrate can be polished.
本発明の研磨ガラス基板の製造方法では、表面研磨液にガラス基板を浸漬して化学研磨により表面を研磨することにより、ディンプルの成長を抑制して平滑なガラス表面を有するガラス基板を形成する。このような表面研磨に使用できる表面研磨液としては、40〜90重量%の硫酸および0.4〜4重量%のフッ酸を含有する表面研磨液があげられ、特に50〜85重量%の硫酸および0.5〜4重量%のフッ酸を含有する研磨液が好ましい。表面研磨液の残部は主として水であるが、他の溶媒、界面活性剤、安定剤等の添加剤を含有していてもよい。表面研磨液において、硫酸の濃度またはフッ酸の濃度が上記の下限値を下回ると、ディンプルの成長を抑制する作用が弱くなり、硫酸の濃度またはフッ酸の濃度が上記の上限値を越えると、ガラス表面に段差を生じやすくなり好ましくない。 In the method for producing a polished glass substrate of the present invention, a glass substrate having a smooth glass surface is formed by suppressing dimple growth by immersing the glass substrate in a surface polishing liquid and polishing the surface by chemical polishing. Examples of the surface polishing liquid that can be used for such surface polishing include a surface polishing liquid containing 40 to 90% by weight of sulfuric acid and 0.4 to 4% by weight of hydrofluoric acid, and particularly 50 to 85% by weight of sulfuric acid. A polishing liquid containing 0.5 to 4% by weight of hydrofluoric acid is preferred. The balance of the surface polishing liquid is mainly water, but may contain other solvents, surfactants, stabilizers and other additives. In the surface polishing liquid, when the concentration of sulfuric acid or the concentration of hydrofluoric acid is lower than the above lower limit value, the action of suppressing the growth of dimples becomes weak, and when the concentration of sulfuric acid or the concentration of hydrofluoric acid exceeds the above upper limit value, A step is likely to occur on the glass surface, which is not preferable.
表面研磨工程における表面研磨液の温度は特に限定されず、常温でよいが、温度が高い程ディンプルの抑制効果が高くなる。このため液温によっては、30〜50℃に加温して表面研磨工程を行うこともできる。研磨液の浸漬時間は1〜90分(好ましくは5〜30分)が適している。1分未満ではディンプルの成長抑制効果が十分でなく、90分以上の長い時間浸漬する場合、ガラス基板の研磨加工の生産性が低下する。この表面研磨工程では、所定のガラス基板厚さになるまで研磨する必要はなく、平滑なガラス表面が得られればよい。 The temperature of the surface polishing liquid in the surface polishing step is not particularly limited and may be room temperature. However, the higher the temperature, the higher the dimple suppression effect. Therefore, depending on the liquid temperature, the surface polishing step can be performed by heating to 30 to 50 ° C. The immersion time of the polishing liquid is suitably 1 to 90 minutes (preferably 5 to 30 minutes). If it is less than 1 minute, the dimple growth inhibitory effect is not sufficient, and when immersed for a long time of 90 minutes or more, the productivity of polishing of the glass substrate decreases. In this surface polishing step, it is not necessary to polish until a predetermined glass substrate thickness is reached, and it is only necessary to obtain a smooth glass surface.
表面研磨液による表面研磨により、ディンプルの成長を抑制して平滑なガラス表面を有するガラス基板を形成することができる。そのメカニズムは明らかではないが、元々ガラス表面上に存在するマイクロクラックが、化学研磨の過程で大きく成長し、拡大するのを抑制するメカニズムとして、適度な濃度のフッ酸を含有する高粘性の研磨液と接触させ、マイクロクラック内にフッ化物を析出させて閉じ込めることにより、平坦部の研磨が先行してクラックが消滅するものと推測される。 By surface polishing with a surface polishing liquid, growth of dimples can be suppressed and a glass substrate having a smooth glass surface can be formed. The mechanism is not clear, but high-viscosity polishing containing a moderate concentration of hydrofluoric acid is a mechanism that prevents microcracks that originally exist on the glass surface from growing and expanding in the process of chemical polishing. It is presumed that the crack disappears in advance by polishing the flat portion by bringing it into contact with the liquid and precipitating and confining the fluoride in the microcrack.
こうして表面研磨液による表面研磨により、ディンプルの成長を抑制して平滑なガラス表面が形成されたガラス基板を、後研磨工程として、中〜低濃度のフッ酸を含有する後研磨液に浸漬して、所定のガラス基板厚さになるまで後研磨することにより、目的とするガラス基板厚さを有する研磨ガラス基板を製造することができる。この後研磨液は、2〜30重量%のフッ酸を含有する研磨液であるが、塩酸、硫酸、リン酸、硝酸等のフッ酸以外の無機酸を含有することができる。後研磨液の残部は主として水であるが、他の溶媒、界面活性剤、安定剤等の添加剤を含有していてもよい。 As a post-polishing step, a glass substrate on which a smooth glass surface is formed by suppressing the dimple growth by surface polishing with the surface polishing liquid is immersed in a post-polishing liquid containing medium to low concentration hydrofluoric acid. A polished glass substrate having a target glass substrate thickness can be produced by post-polishing until a predetermined glass substrate thickness is reached. Thereafter, the polishing liquid is a polishing liquid containing 2 to 30% by weight of hydrofluoric acid, but can contain an inorganic acid other than hydrofluoric acid such as hydrochloric acid, sulfuric acid, phosphoric acid, and nitric acid. The remainder of the post-polishing liquid is mainly water, but may contain other solvents, surfactants, stabilizers and other additives.
後研磨工程は従来より行われている研磨であり、所定のガラス基板厚さになるまで研磨することによる研磨ガラス基板を製造する方法である。従って後研磨工程には、従来より行われている所定のガラス基板厚さになるまで研磨する方法における条件、操作等が採用できる。後研磨工程における後研磨液の温度は特に限定されず、常温でよいが、一般的には15〜50℃で後研磨工程を行うことができる。後研磨液の浸漬時間は30〜150分
程度であるが、目的とするガラス基板厚さになるまでの研磨に要する時間である。
The post-polishing step is conventional polishing, and is a method for manufacturing a polished glass substrate by polishing until a predetermined glass substrate thickness is reached. Therefore, in the post-polishing step, conditions, operations, and the like in the method of polishing until a predetermined glass substrate thickness that has been conventionally performed can be employed. The temperature of the post-polishing liquid in the post-polishing step is not particularly limited and may be room temperature, but in general, the post-polishing step can be performed at 15 to 50 ° C. The immersion time of the post-polishing liquid is about 30 to 150 minutes, but is the time required for polishing until the target glass substrate thickness is reached.
後研磨工程で所定のガラス基板厚さになるまで研磨することにより、目的とするガラス基板厚さの研磨ガラス基板を製造することができる。この場合、本発明では表面研磨工程により、ディンプルの成長を抑制して表面研磨することにより、平滑なガラス表面が得られているので、この状態で後研磨工程で所定のガラス基板厚さになるまで研磨しても、ガラス表面にディンプルや段差が生じることはなく、平滑なガラス表面を有する研磨ガラス基板が得られる。このため上記の方法で液晶ディスプレイ用ガラス基板を化学研磨することにより、ディンプルの発生を抑制しかつ良好な表面状態を維持した高品質の製品を提供することができる。 By polishing to a predetermined glass substrate thickness in the post-polishing step, a polished glass substrate having a target glass substrate thickness can be produced. In this case, in the present invention, the surface polishing step suppresses the dimple growth and polishes the surface to obtain a smooth glass surface. In this state, the post-polishing step has a predetermined glass substrate thickness. Even if polished up to dimples, no dimples or steps are formed on the glass surface, and a polished glass substrate having a smooth glass surface can be obtained. Therefore, by chemically polishing the glass substrate for liquid crystal display by the above method, it is possible to provide a high-quality product that suppresses the generation of dimples and maintains a good surface state.
本発明によれば、40〜90重量%の硫酸および0.4〜4重量%のフッ酸を含有する表面研磨液にガラス基板を浸漬して表面研磨することにより、ディンプルの成長を抑制してガラス基板を表面研磨し、平滑なガラス表面を有するガラス基板を得ることができる。
また表面研磨した表面研磨ガラス基板を、後研磨工程で所定のガラス基板厚さになるまで研磨することにより、ガラス表面にディンプルや段差が生じることがなく、平滑なガラス表面を有する研磨ガラス基板を製造することができる。
本発明で得られる研磨ガラス基板は、ガラス表面にディンプルや段差が生じることがなく、平滑なガラス表面を有し、所定のガラス基板厚さを有する。
According to the present invention, dimple growth is suppressed by dipping a glass substrate in a surface polishing liquid containing 40 to 90% by weight sulfuric acid and 0.4 to 4% by weight hydrofluoric acid to perform surface polishing. A glass substrate having a smooth glass surface can be obtained by polishing the surface of the glass substrate.
Further, by polishing the surface-polished glass substrate that has been surface-polished until a predetermined glass substrate thickness is obtained in a post-polishing step, there is no dimple or step on the glass surface, and a polished glass substrate having a smooth glass surface is obtained. Can be manufactured.
The polished glass substrate obtained by the present invention has a smooth glass surface without dimples or steps on the glass surface, and has a predetermined glass substrate thickness.
以下に本発明における実施形態として液晶ディスプレイ用のガラス基板の製造方法の一例を図1により説明するが、実施形態に用いるガラス基板の種類、研磨液槽の形態、ガラス基板の保持具等の各種器具、装置類の運用方法は本発明を限定するものではない。
図1において、1は表面研磨液槽、2は第1水洗槽、3は後研磨液槽、4は第2水洗槽、
5は最終水洗槽である。
An example of a method for producing a glass substrate for a liquid crystal display will be described below with reference to FIG. 1 as an embodiment of the present invention. However, various types of glass substrate, polishing liquid tank, glass substrate holder, etc. used in the embodiment are described below. The operation method of the appliances and devices does not limit the present invention.
In FIG. 1, 1 is a surface polishing bath, 2 is a first washing bath, 3 is a post-polishing bath, 4 is a second washing bath,
5 is a final washing tank.
液晶ディスプレイ用のガラス基板20の大きさは様々である。化学研磨は、表面研磨液6を満たした表面研磨液槽1と、洗浄水7を満たした第1水洗槽2と、後研磨液8を満たした後研磨液槽3と、洗浄水9を満たした第2水洗槽4と、洗浄水10を満たした最終水洗槽5を図1の順に配置し、ガラス基板20を収納したカセット容器21を、表面研磨液槽1、第1水洗槽2、後研磨液槽3、第2水洗槽4および最終水洗槽5に順次出し入れして行う。
The size of the
まず、表面研磨液6を満たした表面研磨液槽1にカセット21を浸漬し、散気装置11から窒素または空気のガスバブリング等の手段により表面研磨液6を攪拌して表面研磨を行う。表面研磨液槽1の浸漬時間は1〜90分(好ましくは5〜30分)が適している。1分以下ではディンプルの成長抑制効果が十分でなく、90分以上の長い時間浸漬するのは、ガラス基板20の研磨加工の生産性が低下するので好ましくない。また、表面研磨液の温度は特に限定しないが、温度が高い程ディンプルの抑制効果が高くなることが分かっている。液温によっては30〜50℃に加温して行うことができる。
First, the
次に、表面研磨液槽1からカセット21を取り出し、直ちに第1水洗槽2に浸漬して、散気装置12からガスバブリング等の手段により攪拌して、ガラス表面20に付着した表面研磨液を洗浄水7により洗浄除去する。引き続き第1水洗槽2からカセット21を取り出し、後研磨液8を満たした後研磨液槽3に浸漬し、後研磨を行う。このとき後研磨液8は散気装置13からガスバブリング等の手段もしくは研磨液を循環する等の手段により、均一な流動を保つことが好ましい。流動が不十分であると、ガラス基板20の表面に析出物が蓄積し、研磨速度にむらが生じ研磨厚さが不均一になったり、表面仕上がりの不良をまねくことになる。後研磨液8による処理は、あらかじめ定められたガラス厚さに応じて、研磨時間を設定して行う。
Next, the
後研磨液槽3で化学研磨が終了したら直ちにカセット21を取り出し、洗浄水9を満たした第2水洗槽4に浸漬してガラス基板20を水洗する。洗浄水は散気装置14からガスバブリングで攪拌したり、洗浄水を循環して水洗効果を高めることができる。最後にカセット21を最終水洗槽5に移し、第1、第2水洗槽2、4と同様の操作を行って化学研磨を完了する。
When the chemical polishing is finished in the post-polishing liquid tank 3, the
実施例1:
適度な粗さのサンドペ−パ−を敷き、その上にアルミノホウケイ酸ガラスを10cm角に切断したものを水平に置き、さらにその上から一定荷重をかけてガラス表面に人工的なキズを付与したものを試料として、ディンプル抑制効果を検証した。
試験装置は、図1を模擬した小型の基板収納カセット21および研磨液槽、水洗槽を作成し、前記試料を図1の方法に従って研磨した。研磨後、試料表面を顕微鏡観察して人工キズを起点に成長したディンプルの大きさを観察,数を計測した。また、ガラス基板の表面の状態について目視により観察した。
Example 1:
A sandpaper with an appropriate roughness was laid, and an aluminoborosilicate glass cut into 10 cm square was placed horizontally, and a certain load was applied from above to give artificial scratches to the glass surface. Using samples as samples, the dimple suppression effect was verified.
The test apparatus produced a small
比較例1:
比較例1は同一試料を用い、表面研磨液槽1における表面研磨液6による処理、および第1水洗槽2における水洗を行わず、後研磨液槽3おける後研磨液8による処理と、第2および最終水洗槽4、5における水洗のみを行って比較した。なお、実施例1および比較例1の後研磨液槽3における後研磨液8による研磨はいずれも、フッ酸10重量%および硫酸5重量%を含む研磨液により、常温で約50分間加工した。
Comparative Example 1:
Comparative Example 1 uses the same sample, the treatment with the surface polishing liquid 6 in the surface polishing liquid tank 1, the treatment with the post polishing liquid 8 in the post polishing liquid tank 3 without performing the water washing in the first
評価の方法:
評価の方法は、直径50μm以上のディンプル数が比較例1に対し減少していること、および前述した段差が存在しないこと、をそれぞれ満たすものを抑制効果の判定とした。
Evaluation method:
For the evaluation method, the suppression effect was judged as satisfying that the number of dimples having a diameter of 50 μm or more was smaller than that of Comparative Example 1 and that the above-described step was not present.
表1の結果から、まず、ディンプル数の減少傾向と段差の発生傾向は、硫酸濃度とフッ酸濃度および表面研磨液への浸漬時間とのバランスによって決まってくることが読み取れる。すなわち、RUN1、2、6、8および9の結果から、硫酸濃度60〜85重量%、フッ酸濃度1.1〜3.9重量%の条件においては、径が150μm以上の大きなディンプルは認められず、ディンプル合計数も比較例1のほぼ1/2〜1/7以下に減少し、段差も発生していない。
From the results in Table 1, it can be read that the decreasing tendency of the number of dimples and the tendency of occurrence of a step are determined by the balance between the sulfuric acid concentration, the hydrofluoric acid concentration, and the immersion time in the surface polishing liquid. That is, from the results of
また、硫酸70重量%でフッ酸濃度が低い(0.9重量%)のRUN3においては、浸漬時間を延ばすことにより、ディンプル数が比較例1の1/10まで減少しており、浸漬時間を長く設定することによって、ディンプル抑制効果が向上することが示唆される。 In addition, in RUN3 having 70% by weight sulfuric acid and a low hydrofluoric acid concentration (0.9% by weight), the number of dimples was reduced to 1/10 of that of Comparative Example 1 by extending the immersion time. It is suggested that the dimple suppression effect is improved by setting it longer.
さらにフッ酸濃度が低い(0.5重量%)のRUN4と、硫酸濃度が低い(50重量%)RUN5およびRUN7においても、径が150μm以上のディンプルは無く、合計数で4/5程度までの低減が可能である。 Furthermore, RUN4 with a low hydrofluoric acid concentration (0.5% by weight) and RUN5 and RUN7 with low sulfuric acid concentration (50% by weight) have no dimples with a diameter of 150 μm or more, and the total number is up to about 4/5. Reduction is possible.
一方、硫酸濃度が90重量%を越えるRUN12や、フッ酸濃度が4重量%を越えるRUN10,11、さらに硫酸濃度が30重量%と低くてフッ酸濃度が5.5重量%と高いRUN13では、
いずれもディンプル発生抑制効果は認められるものの、段差を生じ易く好ましくない。
以上から、段差を生じさせずにディンプルを抑制するためには、硫酸40〜90重量%(好ましくは50〜85重量%)、フッ酸0.4〜4重量%(好ましくは0.5〜4重量%)の濃度範囲で研磨を行う必要がある。
On the other hand, in RUN12 in which the sulfuric acid concentration exceeds 90% by weight, RUN10,11 in which the hydrofluoric acid concentration exceeds 4% by weight, and RUN13 in which the sulfuric acid concentration is as low as 30% by weight and the hydrofluoric acid concentration is as high as 5.5% by weight,
In either case, although the dimple generation suppression effect is recognized, a step is likely to occur, which is not preferable.
From the above, in order to suppress dimples without causing a step, 40 to 90% by weight of sulfuric acid (preferably 50 to 85% by weight) and 0.4 to 4% by weight of hydrofluoric acid (preferably 0.5 to 4%). It is necessary to perform polishing in a concentration range of (% by weight).
実施例2(実基板によるテスト結果):
アルミノホウケイ酸ガラス基板(第4世代サイズ)を用いて試験を行った。表面研磨液6として硫酸70重量%,フッ酸1.3重量%の水溶液を使用し、この表面研磨液にガラス基板を浸漬することにより、ガラス表面の研磨を行った。このとき、表面研磨液の温度を15℃、ガラス基板を研磨液に浸漬する時間を約15分とし、表面研磨液はエアバブリングにより攪拌を行った。表面研磨終了後、ガラス基板を水洗した。その後、フッ酸10重量%および硫酸5重量%を含む後研磨液により、所定のガラス厚さまで加工した。その結果、実用評価基準における不適合率が1/3まで減少した。
Example 2 (Test results using an actual substrate):
The test was conducted using an aluminoborosilicate glass substrate (4th generation size). The surface of the glass was polished by using an aqueous solution of 70 wt% sulfuric acid and 1.3 wt% hydrofluoric acid as the surface polishing liquid 6 and immersing the glass substrate in this surface polishing liquid. At this time, the temperature of the surface polishing liquid was 15 ° C., the time for immersing the glass substrate in the polishing liquid was about 15 minutes, and the surface polishing liquid was stirred by air bubbling. After the surface polishing, the glass substrate was washed with water. Thereafter, it was processed to a predetermined glass thickness with a post-polishing liquid containing 10% by weight of hydrofluoric acid and 5% by weight of sulfuric acid. As a result, the nonconformity rate in the practical evaluation standard was reduced to 1/3.
実施例3(実基板によるテスト結果):
アルミノホウケイ酸ガラス基板(第4世代サイズ)を用いて試験を行った。表面研磨液6として硫酸60重量%,フッ酸1.4重量%の水溶液を使用し、この表面研磨液にガラス基板を浸漬することにより、ガラス表面の表面研磨を行った。このとき、表面研磨液の温度を15℃、ガラス基板を表面研磨液に浸漬する時間を約70分とし、表面研磨液はエアバブリングにより攪拌を行った。表面研磨終了後、ガラス基板を水洗した。その後、フッ酸10重量%および硫酸5重量%を含む後研磨液により、所定のガラス厚さまで加工した。その結果、実用評価基準における不適合率が1/20まで減少した。
Example 3 (Test results using an actual substrate):
The test was conducted using an aluminoborosilicate glass substrate (4th generation size). An aqueous solution of 60 wt% sulfuric acid and 1.4 wt% hydrofluoric acid was used as the surface polishing liquid 6, and the glass surface was polished by immersing the glass substrate in this surface polishing liquid. At this time, the temperature of the surface polishing liquid was 15 ° C., the time for immersing the glass substrate in the surface polishing liquid was about 70 minutes, and the surface polishing liquid was stirred by air bubbling. After the surface polishing, the glass substrate was washed with water. Thereafter, it was processed to a predetermined glass thickness with a post-polishing liquid containing 10% by weight of hydrofluoric acid and 5% by weight of sulfuric acid. As a result, the nonconformity rate in the practical evaluation standard was reduced to 1/20.
フッ酸を含む化学研磨液によりガラス基板を浸漬し、所定のガラス基板厚さまで表面研磨する研磨ガラス基板、特に液晶ディスプレイ用ガラス基板の製造方法として利用可能である。 The glass substrate is immersed in a chemical polishing liquid containing hydrofluoric acid, and the surface of the glass substrate is polished to a predetermined glass substrate thickness. In particular, it can be used as a method for producing a glass substrate for a liquid crystal display.
1 表面研磨液槽
2 第1水洗槽
3 後研磨液槽
4 第2水洗槽
5 最終水洗槽
6 表面研磨液
7、9,10 洗浄水
8 後研磨液
11、12、13、14、15 散気装置
20 ガラス基板
21 カセット
DESCRIPTION OF SYMBOLS 1 Surface polishing
Claims (5)
40〜90重量%の硫酸および0.4〜4重量%のフッ酸を含有する表面研磨液にガラス基板を浸漬して表面研磨することを特徴とする研磨ガラス基板の製造方法。 A method for producing a polished glass substrate in which a glass substrate is immersed in a polishing liquid containing hydrofluoric acid and the surface is chemically polished,
A method for producing a polished glass substrate, comprising: dipping a glass substrate in a surface polishing solution containing 40 to 90% by weight sulfuric acid and 0.4 to 4% by weight hydrofluoric acid to perform surface polishing.
40〜90重量%の硫酸および0.4〜4重量%のフッ酸を含有する表面研磨液にガラス基板を浸漬して表面研磨後、
2〜30重量%のフッ酸を含有する後研磨液に前記ガラス基板を浸漬して、所定のガラス基板厚さになるまで後研磨することを特徴とする研磨ガラス基板の製造方法。 A method for producing a polished glass substrate in which a glass substrate is immersed in a polishing liquid containing hydrofluoric acid and the surface is chemically polished,
After surface polishing by immersing the glass substrate in a surface polishing liquid containing 40 to 90% by weight sulfuric acid and 0.4 to 4% by weight hydrofluoric acid,
A method for producing a polished glass substrate, comprising immersing the glass substrate in a post-polishing liquid containing 2 to 30% by weight of hydrofluoric acid and post-polishing until a predetermined glass substrate thickness is reached.
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TW096114959A TWI383963B (en) | 2006-04-28 | 2007-04-27 | Process for producing polished glass substrate,polished glass substrate and surface-polishing liquor |
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JP2013256427A (en) * | 2012-06-14 | 2013-12-26 | Nsc:Kk | Chemical polishing apparatus |
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JP2721103B2 (en) * | 1992-11-24 | 1998-03-04 | ホーヤ株式会社 | Glassware decorating material and decorating method |
JP2001089191A (en) * | 1999-09-27 | 2001-04-03 | Nippon Sheet Glass Co Ltd | Production process for display glass substrate and display glass substrate produced by the same |
JP3575349B2 (en) | 1999-09-27 | 2004-10-13 | 日立プラント建設株式会社 | Cleaning solution and cleaning method for aluminosilicate glass substrate |
DE10228116A1 (en) * | 2002-06-24 | 2004-01-29 | Sälzle, Erich, Dr. | Process for polishing glass objects |
JP2005350350A (en) * | 2005-08-04 | 2005-12-22 | Nishiyama Stainless Chem Kk | Method for polishing surface of glass plate, glass substrate for flat panel display, and flat panel display |
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JP2010280544A (en) * | 2009-06-05 | 2010-12-16 | Tosoh Corp | Cleaning method for polished quartz glass substrate |
JP2013014459A (en) * | 2011-07-01 | 2013-01-24 | Stella Chemifa Corp | Surface treatment liquid for producing anti-glare surface of glass substrate |
CN102513940A (en) * | 2012-01-04 | 2012-06-27 | 周晓辉 | Method for producing glass with low reflectance and high transparency for screen panel |
JP2013256427A (en) * | 2012-06-14 | 2013-12-26 | Nsc:Kk | Chemical polishing apparatus |
KR20150030641A (en) * | 2012-06-14 | 2015-03-20 | 가부시키가이샤 엔에스씨 | Chemical polishing apparatus |
KR102021959B1 (en) * | 2012-06-14 | 2019-09-17 | 가부시키가이샤 엔에스씨 | Chemical polishing apparatus |
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