KR102021959B1 - Chemical polishing apparatus - Google Patents

Abstract

The present invention provides a sheet type chemical polishing apparatus capable of performing chemical polishing treatment on a glass substrate without using a jig.
The chemical polishing apparatus 10 includes at least a first polishing treatment section 4, a second polishing treatment section 2, and a cleaning section 70. The 1st grinding | polishing part 4 is comprised so that the chemical polishing process may be performed with the 1st process liquid with respect to the glass substrate 100 conveyed along a conveyance path. The 2nd polishing process part 2 is comprised so that a chemical polishing process may be performed with the 2nd process liquid different from a 1st process liquid with respect to the glass substrate 100 conveyed along a conveyance path. The cleaning unit 70 is disposed on the upstream side of the second polishing processing unit 2 while being downstream of the first polishing processing unit 4 in the conveying path, and washes the processing liquid attached to the glass substrate 100. It is configured to.

Description

Chemical Polishing Apparatus {CHEMICAL POLISHING APPARATUS}

The present invention relates to a chemical polishing apparatus configured to perform chemical polishing treatment on a plurality of glass substrates that are continuously conveyed.

In order to thin a glass substrate, generally, the chemical | polishing process should be performed with respect to the glass substrate using the chemical polishing liquid containing hydrofluoric acid. In such chemical polishing treatment, a batch chemical polishing in which a glass substrate to be treated is immersed in a barrel containing a chemical polishing liquid for a predetermined time, and a sheet for spraying the chemical polishing liquid while sequentially conveying the glass substrate to be treated with a conveying roller are used. Single wafer-type chemical polishing.

Among such chemical polishing methods, batch polishing involves thinning the glass substrate to a desired plate thickness by immersing the glass substrate to be treated in a polishing bath for a predetermined time, and thus has the advantage that a large amount of glass substrate can be processed at one time. . However, the batch polishing has at least the following problems.

First, the batch polishing has a problem in that the polishing liquid bath is open toward the upper side, so that the surroundings of the polishing liquid bath become a dark hydrofluoric acid atmosphere. In particular, when the polishing liquid of the polishing liquid bath is bubbling, there is a problem that gaseous hydrofluoric acid is likely to diffuse to the surroundings. Workers who work in such an atmosphere of Foshan may harm their health if they do not wear appropriate protective equipment. This increases the cost of the protective equipment paid to the worker.

In addition, the batch polishing requires a powerful scrubber and exhaust equipment to remove the heavy hydrofluoric acid atmosphere around the polishing bath, thereby increasing the equipment cost. Furthermore, since corrosion of equipment is likely to occur due to hydrofluoric acid gas, there are also problems such as a cost for performing an appropriate corrosion prevention treatment, a cost of increasing equipment replacement frequency, and the like.

Therefore, in recent years, single-sheet chemical polishing has been used. For example, in the prior art, there is a flat panel display glass substrate etching apparatus configured to vertically support a glass substrate with a jig capable of attaching the glass substrate, and to spray the chemical polishing liquid onto the glass substrate while conveying the jig. (For example, refer patent document 1).

Patent Document 1: Japanese Unexamined Patent Publication No. 2008-266135

However, the technique of patent document 1 still has to use the jig for supporting a glass substrate. Therefore, similarly to the batch chemical polishing apparatus described above, the cost of preparing the jig is high, and there is also a problem that jig marks easily occur on the glass substrate. When jig marks generate | occur | produce in a glass substrate, since it becomes very difficult to design a chamfer with good efficiency, there exists a problem of reducing chamfering efficiency.

This invention is made | formed in view of the said subject, and it is providing the single type chemical polishing apparatus which can perform chemical polishing process with respect to a glass substrate, without using a jig.

The chemical polishing apparatus according to the present invention is configured to perform chemical polishing treatment on a plurality of glass substrates continuously conveyed along a conveyance path. As a representative example of the conveying path configuration, there may be mentioned a configuration in which a plurality of conveying rollers are arranged, but a configuration in which a mesh-shaped belt is wound around the roller may be adopted instead of this configuration.

This chemical polishing apparatus includes at least a first polishing treatment portion, a second polishing treatment portion, and a cleaning portion. The 1st polishing process part is comprised so that a chemical polishing process may be performed by the 1st process liquid with respect to the glass substrate conveyed along a conveyance path. The 2nd polishing process part is comprised so that a chemical polishing process may be performed with the 2nd process liquid different from a 1st process liquid with respect to the glass substrate conveyed along a conveyance path. While the washing | cleaning part is located downstream of the 1st polishing process part in a conveyance path, it is arrange | positioned at the upstream side of a 2nd polishing process part, and is comprised so that the process liquid adhered to a glass substrate may be wash | cleaned.

In this structure, the glass substrate continuously conveyed along a conveyance path passes through a 1st polishing process part, a washing | cleaning part, and a 2nd polishing process part sequentially. Since a glass substrate flows along a conveyance path, it is not necessary to protect and support a glass substrate with a jig | tool or the like. The glass substrate continuously conveyed along the conveyance path is chemically polished with the first treatment liquid in the first polishing treatment unit, and then washed in the washing unit, and then chemically polished with the second treatment liquid in the second polishing treatment unit. Therefore, it becomes possible to perform two types of grinding | polishing processes continuously. Examples of two different kinds of polishing treatments include two kinds of treatments in which the fluorine concentration is adjusted differently, and one in which the polishing rate is low and the treatments in which the polishing rate is slow. Two types of treatment which suppresses the glass pit using and thinning glass using the processing liquid which has a fluorine as a main component are mentioned, but it is not limited to these.

In the above configuration, the first polishing treatment portion has a plurality of processing chambers configured to spray the first processing liquid onto the glass substrate, while the second polishing treatment portion has a plurality of treatments configured to spray the second treatment liquid onto the glass substrate. It is desirable to have a chamber. By adopting such a configuration, the size of one processing chamber can be prevented from being enlarged, so that a problem is less likely to occur in each member constituting the processing chamber during the polishing process.

Moreover, in the said structure, it is preferable to further provide the preprocessing part comprised so that the surface of the glass substrate before introducing into a 1st polishing process part at least on the upstream side of a 1st polishing process part. By adopting this configuration, since the surface of the glass substrate is wetted with a liquid such as water to form a liquid film before the polishing treatment is performed on the surface of the glass substrate, the dry portion of the surface of the glass substrate is prevented from being polished. . Therefore, the occurrence of problems such as cloudiness caused by chemical polishing of the dry part is prevented.

According to the present invention described above, it is possible to chemically polish the glass substrate without using a jig.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the external appearance of the sheet type chemical polishing apparatus which concerns on embodiment of this invention.
It is a figure which shows schematic structure of the sheet type chemical polishing apparatus.
It is a figure which shows schematic structure of the sheet type chemical polishing apparatus.
4 is a diagram illustrating a schematic configuration of a third processing chamber.
5 is a diagram illustrating a schematic configuration of a processing liquid supply mechanism.
It is a figure which shows schematic structure of the crank mechanism.
It is a figure explaining the process in a pretreatment chamber.
It is a figure which shows the support state of the glass by a conveyance roller.

FIG. 1: is a figure which shows the external appearance of the sheet type chemical polishing apparatus 10 which concerns on an example of embodiment of this invention. As shown in the figure, the chemical polishing apparatus 1 has a conveying path constituted by arranging a plurality of conveying rollers 50, and the first polishing treatment unit 4, in order from the upstream along the conveying path, The water cleaning chamber 70, the second polishing treatment unit 2, and the water cleaning chamber 24 are provided. In this embodiment, in the first polishing treatment unit 4, a preliminary treatment for the purpose of pit suppression using a high viscosity polishing liquid containing sulfur containing an appropriate concentration of fluorine as a main component is performed, and the second polishing treatment unit 2 ), The thinning treatment is performed using a polishing liquid containing fluorine as a main component.

A front end of the first polishing treatment section 4 is provided with a carrying-in section 62 and a pretreatment chamber 64. The first polishing treatment unit 2 is provided with a first processing chamber 66, a second processing chamber 68, and a first relay unit 72. Further, a water cleaning chamber 70 is provided at the rear end of the first polishing treatment unit 4.

The carrying-in part 62 is comprised so that the glass substrate 100 to process to be carried in by manual work by a worker or automatic work by a robot etc. may be accommodated. In this embodiment, the glass substrate 100 is a thin glass substrate having a thickness of about 0.5 mm to 2.0 mm for a flat panel, but the glass substrate 100 to be treated is not limited thereto. The pretreatment chamber 64 is comprised so that the glass substrate 100 conveyed from the loading part 62 may be accommodated. The first processing chamber 66 is configured to thin the glass substrate 100 while spraying a chemical polishing liquid on the upper and lower surfaces of the glass substrate 100 to suppress or remove pits on the surface of the glass substrate 100. The second processing chamber 68 is configured to spray the chemical polishing liquid having the same composition as the first processing chamber 66 on the upper and lower surfaces of the glass substrate 100 to further suppress or remove the surface pits of the glass substrate 100. The first relay unit 72 is configured to connect the first processing chamber 66 and the first processing chamber 68.

The water washing chamber 70 is configured to water wash the glass substrate 100 via the second processing chamber 68. The water washing chamber 70 constitutes a washing unit in this invention. In this embodiment, although the water washing chamber 70 is employ | adopted as a washing | cleaning part, it is also possible to employ | adopt the structure which wash | cleans the glass substrate 100 using cleaning liquids other than water as a washing | cleaning part. The glass substrate 100 from which the process liquid was removed in the water washing chamber 70 is again conveyed downstream of a conveyance path.

 A carrying-in part 12 and a pretreatment chamber 14 are provided at the rear end of the first polishing treatment part 4 and the front end of the second polishing treatment part 2. The second polishing treatment unit 2 includes a third processing chamber 16, a fourth processing chamber 18, a fifth processing chamber 20, a sixth processing chamber 22, a second relay 28, and a third processing chamber 16. The relay unit 30 and the fourth relay unit 32 are provided. In addition, a water cleaning chamber 24 and a carrying out part 26 are provided at the rear end of the second polishing treatment part 2. The 2nd process liquid accommodation part 42, the 2nd process liquid supply part 44, and the water supply part 46 are provided.

The loading part 12 is configured to accommodate the glass substrate 100 discharged from the water cleaning chamber 70. The pretreatment chamber 14 is comprised so that the glass substrate 100 conveyed from the loading part 12 may be accommodated. The third processing chamber 16 is configured to spray the chemical polishing liquid on the upper and lower surfaces of the glass substrate 100 to thin the glass substrate 100. The fourth processing chamber 18, the fifth processing chamber 20, and the sixth processing chamber 22 respectively spray chemical polishing liquid having the same composition as that of the third processing chamber 16 on the upper and lower surfaces of the glass substrate 100. The glass substrate 100 is further thinned. The second relay portion 28, the third relay portion 30, and the fourth relay portion 32 are each configured to connect a plurality of processing chambers.

The water washing chamber 24 is configured to wash the glass substrate 100 via the sixth processing chamber 22. The carrying out part 26 is comprised so that the glass substrate 100 which carried out the chemical polishing process and the water washing process can be carried out. The glass substrate 100 which has reached the carrying out part 26 is removed from the chemical polishing apparatus 10 by manual operation by a worker or automatic operation by a robot etc., and is collect | recovered. Thereafter, the glass substrate 100 is introduced into the chemical polishing apparatus 10 again when thinning is further required, and when the thinning is no longer necessary, the glass substrate 100 is transferred to a subsequent process such as a film forming process.

As shown in FIG. 2, the chemical polishing apparatus 10 includes a first processing liquid receiving part 84, a first processing liquid supplying part 82, a water supplying part 74, a second processing liquid containing part 42, and a second processing liquid receiving part 84. The processing liquid supply part 44 and the water supply part 46 are provided. The first processing liquid container 84 is connected to the first processing chamber 66 and the second processing chamber 68 via the recovery line 840. The first processing liquid supply unit 82 is connected to the first processing chamber 66, the second processing chamber 68, and the first relay unit 72 through the liquid supply line 820. The water supply 74 is connected to the pretreatment chamber 64 and the water cleaning chamber 70 through the water supply line 740. 1, illustration of the recovery line 420, the liquid supply line 440, and the washing water feed line 460 of the chemical polishing treatment 10 is omitted.

The second processing liquid container 42 is connected through the third processing chamber 16, the fourth processing chamber 18, the fifth processing chamber 20, the sixth processing chamber 22, and the recovery line 42. It is. The second processing liquid supply part 44 is connected to the third processing chamber 16, the fourth processing chamber 18, the fifth processing chamber 20, the sixth processing chamber 22, and the second through the liquid supply line 440. It is connected to the relay part 28, the 3rd relay part 30, and the 4th relay part 32. As shown in FIG. The water supply 46 is connected to the pretreatment chamber 14 and the water cleaning chamber 24 via a water supply line 460.

In the above-described chemical polishing apparatus 10, except for the inlet into the pretreatment chambers 64 and 14, the outlet from the water cleaning chambers 70 and 24, and some workspaces of the crank mechanism 36 to be described later, The polishing apparatus 10 is hermetically and watertightly closed as a whole. Inlets and outlets provided in the chemical polishing apparatus have a slit shape slightly higher than the plate thickness of the glass substrate 100 and slightly wider than the width of the glass substrate 100. Moreover, as mentioned above, many conveyance rollers 50 are arrange | positioned on the same plane through each part. Each conveyance roller 50 conveys to the right direction of illustration, supporting the bottom surface of the glass substrate 100. FIG.

Here, the conveyance speed is preferably set to 100 to 800 mm / minute, more preferably 300 to 550 mm / minute. And in the first processing chamber 66, the second processing chamber 68, the third processing chamber 16, the fourth processing chamber 18, the fifth processing chamber 20 and the sixth processing chamber 22. In this embodiment, the processing time is set to about 20 minutes to 60 minutes in total, but is not limited thereto. In addition, if the conveyance speed is too slow beyond the above range, not only the production efficiency is bad, but also the chemical polishing liquid tends to stay on the glass substrate 100, and uniform chemical polishing is inhibited, or in the worst case, the glass substrate 100 is broken. There is a risk of causing. On the other hand, in order to increase the conveyance speed in the same apparatus scale, it is difficult to optimize the liquid composition for realizing this, and eventually, homogeneous chemical polishing is difficult to realize.

Although the glass substrate 100 thinned by the chemical polishing apparatus 10 is not specifically limited, About the large glass substrates, such as a quarter cut (1080x1230mm) and G6 size (1500x1800mm) of G8 size, both the upper and lower sides The chemical polishing apparatus 10 is comprised so that it can grind | homogenize uniformly. Moreover, the chemical polishing apparatus 10 is comprised so that the glass substrate 100 may be conveyed by the conveyance roller 50 directly, without using a jig and a carrier.

As described above, the first processing chamber 66, the second processing chamber 68, and the first relay unit 72 manage the temperature from the first processing liquid supply unit 82 via the liquid supply line 82. Supplied with the first treatment liquid (chemical polishing liquid). In this embodiment, the 1st process liquid is managed by the temperature of about 40-42 degreeC. In addition, although the composition of a 1st process liquid is 35-95 weight% of sulfuric acid, about 1-10 weight% of fluorine, and the liquid composition of the remaining water is used, it is not limited to this liquid composition.

In addition, the third processing chamber 16, the fourth processing chamber 18, the fifth processing chamber 20, the sixth processing chamber 22, the second relay 28, the third relay 30, and The 4th relay part 32 receives the 2nd process liquid (chemical polishing liquid) temperature-controlled from the 2nd process liquid supply part 44 via the liquid supply line 440. FIG. In this embodiment, the 2nd process liquid is managed by the temperature of about 40-42 degreeC. In addition, the composition of the second treatment liquid is 1 to 20% by weight of fluorine, 0 to 10% by weight of hydrochloric acid, and the liquid composition of the remaining water is used, but is not limited to this liquid composition.

The pretreatment chamber 64 and the water cleaning chamber 70 receive the washing water from the water supply unit 46 via the water supply line 740. In addition, the pretreatment chamber 14 and the water cleaning chamber 24 are supplied with the washing water from the water supply unit 46 via the water supply line 460. Meanwhile, the wastewater discharged from the pretreatment chambers 64 and 14 and the water cleaning chambers 70 and 24 is treated with wastewater. Discharged to the facility.

On the other hand, as described above, the bottom portions of the first processing chamber 66 and the second processing chamber 68 are communicated with the first processing liquid containing portion 84 via the recovery line 840, so that the first processing liquid This is to be recovered. In addition, the bottom surface of the third processing chamber 16, the fourth processing chamber 18, the fifth processing chamber 20, and the sixth processing chamber 22 may be the second processing liquid container through the recovery line 420. In communication with (42), the second processing liquid is recovered.

Since the bottom surfaces of the first relay portion 72 each have a bottom portion inclined toward the adjacent processing chamber, the first processing liquid in the first relay portion 72 is smoothly guided to the adjacent processing chamber. Since the bottom portions of the second relay portion 28, the third relay portion 30, and the fourth relay portion 32 each have a bottom portion inclined toward the adjacent processing chamber, the second relay portion 28 and the third portion The second processing liquid in the relay unit 30 and the fourth relay unit 32 is also guided smoothly to the adjacent processing chamber. The recovered polished water is sent to the first treatment liquid supply part 82 or the second treatment liquid supply part 44 if the recycled water is subjected to precipitation or other treatment of the reaction product and is not reused. If so, it is transferred to the wastewater treatment process as rich wastewater.

3, the pretreatment chamber 64, the first processing chamber 66, the second processing chamber 68, the water cleaning chamber 70, the pretreatment chamber 14, and the third processing chamber 16. , The fourth processing chamber 18, the fifth processing chamber 20, the sixth processing chamber 22 and the water cleaning chamber 24 communicate with the exhaust unit 34 via the exhaust line 340, The gas inside each chamber is sucked into the exhaust part 34. Here, since the exhaust line 340 is functioning normally, the opening of the chemical polishing apparatus 10 is maintained at a negative pressure, and the processing gas does not leak through these openings.

The configuration of each processing chamber will be described here, but since the configuration of the first polishing processing unit 4 side is substantially the same as that of the second polishing processing unit 2 side, the configuration of the second polishing processing unit 2 side will be described below. Only the explanation will be given, and the description on the configuration of the first polishing treatment unit 4 side will be omitted. As shown in FIGS. 4 and 5, the third processing chamber 16, the fourth processing chamber 18, the fifth processing chamber 20, the sixth processing chamber 22, and the water cleaning chamber 24 are provided. 1 group (10 pieces) of injection pipes 444 (444U, 444L) extended in the conveyance direction of the glass substrate 100 are arrange | positioned at the up-down position of the conveyance roller 50, respectively. Each injection pipe 444 is a hollow resin pipe made of vinyl chloride or Teflon (registered trademark), and a plurality of injection nozzles 446 are formed in one injection pipe in a row. Then, chemical polishing liquid is injected from the upper injection pipe 444U disposed on the upper side to the upper surface of the glass substrate 100, and from the lower injection pipe 444L disposed on the lower side to the bottom surface of the glass substrate 100. Chemical polishing liquid is sprayed. On the other hand, the washing water is sprayed on the upper surface of the glass substrate from the upper spray pipe 242U disposed in the water cleaning chamber 24, and the washing water is sprayed on the bottom surface of the glass substrate 100 from the lower spray pipe 242L. do. In addition, injection pipes 282 (282U and 282L), injection pipes 302 (302U and 302L) and injection pipes are provided in the second relay 28, the third relay 30 and the fourth relay 32, respectively. (322 (322U, 322L)) is provided, and the chemical polishing liquid having the same composition as the third to sixth processing chambers 18, 22, 22, and 24 is sprayed on the upper surface and the bottom surface of the glass substrate 100. do.

In this embodiment, the injection pipe 282 (282U, 282L) arrange | positioned at the 2nd relay part 28, the 3rd relay part 30, and the 4th relay part 32, the injection pipe 302 (302U, 302L). ) And the injection pipes 322 (322U and 322L) and the injection pipes 242U and 242L disposed in the water cleaning chamber 24 are kept fixed. On the other hand, each injection pipe 444 disposed in the third processing chamber 16, the fourth processing chamber 18, the fifth processing chamber 20, and the sixth processing chamber 22 is formed by the crank mechanism 36. It is configured to swing.

As shown in Figs. 5A and 5B, in this embodiment, the third processing chamber 16, the fourth processing chamber 18, the fifth processing chamber 20, and the sixth processing chamber ( 22, 10 injection pipes 444 (444U, 444L) are arrange | positioned above and below the glass substrate 100, respectively. FIG. 5A is a plan view of the injection pipes 444 (444U and 444L), and eight injection nozzles 446 are formed in each injection pipe 444 (444U and 444L), for example.

As for each injection pipe 444 (444U, 444L), the front end side (lower side) is closed, and the hydraulic pressure control part is provided in the base end side. The hydraulic control unit is composed of injection pipes 444 (444U, 444L) and the same number (10) of open / close valves 442 (442U, 442L), and the degree of opening of each open / close valves 442 (442U, 442L) is determined. By adjusting, the hydraulic pressure of the chemical polishing liquid supplied to each injection pipe 444 (444U, 444L) can be set arbitrarily. For example, the difference in the hydraulic pressure between the upper injection pipe 444U and the lower injection pipe 444L, or the injection pipes 444 (444U, 444L) and the end injection pipes 444 (444U, 444L)), it is possible to make a difference in the hydraulic pressure. On the other hand, the hydraulic pressure of the chemical polishing liquid supplied to the respective injection pipes 444 (444U and 444L) can be confirmed by the gauge 38 disposed on the upper surface of the chemical polishing apparatus 10.

In this embodiment, the hydraulic pressure of the injection pipe 444 (444U, 444L) of a center position is set rather large compared with the injection pipe 444 (444U, 444L) of a peripheral position, and the center position of the glass substrate 100 is set. The contact pressure and the injection amount with respect to the glass substrate 100 are set somewhat higher than the contact pressure and the injection amount with respect to the peripheral position of the glass substrate 100. Therefore, the chemical polishing liquid injected to the center position of the glass substrate 100 moves smoothly to the peripheral position of the glass substrate, and it is difficult for the chemical polishing liquid to stay on the upper surface of the glass substrate 100. As a result, an almost equal amount of chemical polishing liquid acts on the entire surface of the glass substrate 100, and the entire surface of the glass substrate 100 is easily polished uniformly. On the other hand, even when the liquid pressure of the injection pipes 444 (444U and 444L) is not changed in the width direction, when the chemical polishing liquid does not remain on the upper surface of the glass substrate 100, the injection pipes 444 (444U and 444L) are dared. It is not necessary to change the hydraulic pressure of)) in the width direction, and the hydraulic pressure of all the injection pipes 444 (444U and 444L) may be set uniformly.

Moreover, each injection pipe 444 (444U, 444L) is comprised so that both ends may be rotatably supported by a bearing etc., and it oscillates by about +/- 30 degrees by the crank mechanism 36 (FIG. 5 (B). ) Reference). On the other hand, Fig. 5B shows the swing angle, and does not show the injection range of the chemical polishing liquid. That is, since the chemical polishing liquid is ejected in a trumpet shape from the injection nozzle 446 of the injection pipe 444, the injection range is wider than the swing angle.

As shown in FIG. 6 (A) and FIG. 6 (B), the crank mechanism 36 uses the driving force of the driving motor 362 and the driving motor 362 to apply the injection pipes 444 (444U and 444L). And a delivery mechanism portion 364 configured to convert it to oscillating force and deliver it to the injection pipes 444 (444U and 444L). The rotational force of the drive motor 362 is transmitted to the rocking arm 366 via the transfer arm as a force for rocking the rocking arm 366. The rocking arm 366 is supported by the support part 368 provided in the inner wall part of the chemical polishing apparatus 10 in the state which can rotate.

On the other hand, the end of each injection pipe 444 (444U, 444L) penetrates the partition wall of the processing chamber, and is required for the swinging of the injection pipe 444 (444U, 444L) in a portion located outside the processing chamber. Torque transmission arms 372 and 376 for transmitting torque are mounted. The torque transmission arms 372 and 376 are supported by the holding arms 370 and 374 in a state capable of rotational movement, respectively. The holding arms 370 and 374 are connected to the swinging arm 366 in a rotatable and slidable state.

When the rocking arm 366 oscillates due to the rotational force of the drive motor 362, the retaining arms 370 and 374 oscillate in conjunction with the rocking arm 366 as indicated by the arrows in the figure. Force from the retaining arm 370 transmits as torque to the upper injection pipe 444U via the torque transfer arm 372. The force from the holding arm 374 also transmits as torque to the lower injection pipe 444L via the torque transfer arm 376. As a result, as shown to FIG. 6 (A) and FIG. 6 (B), the upper injection pipe 444U and the lower injection pipe 444L are directions orthogonal to the conveyance direction of the glass substrate 100, and oppose each other. Direction is approximately ± 30 °. On the other hand, the rotation speed of the drive motor 362 defines the number of swings of the injection pipes 444 (444U and 444L). In this embodiment, the rotation speed of the drive motor is set to about 10 to 30 rpm.

Since the injection nozzle 446U is formed on the lower surface of the upper injection pipe 444U, and the injection nozzle 446L is formed on the upper surface of the lower injection pipe 444L, each injection nozzle rotates about ± 30 °. At the same time, the chemical polishing liquid is sprayed on the upper and lower surfaces of the glass substrate (see FIG. 5 (B)).

By the way, in this embodiment, the 3rd process chamber 16, the 4th process chamber 18, the 5th process chamber 20, and the 6th process chamber 22 which perform same chemical polishing by the same liquid composition mutually It was installed separately. The reason is to suppress the bending of the injection pipes 444 (444U, 444L) by suppressing the length of the injection pipes 444 (444U, 444L), and also to smoothly rock the injection pipes 444 (444U, 444L). to be. Moreover, it is for suppressing the influence by thermal expansion of the injection pipe 444 (444U, 444L) small. By adopting such a configuration, the distance between the injection pipes 444 (444U and 444L) and the glass substrate 100 can be kept uniform, and it is easy to adjust the hydraulic pressure of the chemical polishing liquid sprayed onto the glass substrate 100. Lose. In addition, since the injection pipes 444 (444U and 444L) are smoothly rocked, the chemical polishing liquid can be smoothly flowed from the upper surface of the glass substrate 100, so that the chemical polishing is performed on the upper surface of the glass substrate 100. The liquid becomes difficult to stay. On the other hand, although the length of the injection pipe 444 (444U, 444L) also concerns a pipe diameter (liquid amount), it is generally preferable to suppress it to 2.5 m or less, Preferably it is 2 m or less.

In order to chemically polish the glass substrate 100 at high speed, it is necessary to increase the feeding amount of the chemical polishing liquid in a heated state, so that the length of the injection pipe 444 (444U, 444L) is suppressed to an appropriate length. By doing so, the plurality of injection pipes 444 (444U and 444L) can be smoothly rocked with a simple mechanism without increasing the size of the drive motor 362.

Subsequently, the structure of the pretreatment chamber 14 is demonstrated using FIG. 7 (A)-FIG. 7 (C). It is as described above that the pretreatment chamber 14 is arranged with a crank mechanism 36 which swings the injection pipes 444 (444U, 444L) in proximity to the third processing chamber 16. In addition to the above configuration, the pretreatment chamber 14 includes an opposing roller 146 which receives the glass substrate 100 at the inlet of the glass substrate 100 into the third processing chamber 16, and an upper and lower surfaces of the glass substrate 100. Water cleaning nozzles 142 and 144 for spraying water are arranged in the air. The water washing nozzles 142 and 144 are arranged in plurality at predetermined intervals over the whole area of the direction (width direction) orthogonal to the conveyance direction of the glass substrate 100. Here, the contact pressure is set so that the glass substrate 100 may be softly maintained by the counter roller 146 and the conveyance roller 50, and may be introduce | transduced into the 3rd process chamber 16. As shown in FIG.

Moreover, the water washing nozzles 142 and 144 are set so that water may be sprayed toward the inlet port of the glass substrate 100 to the 3rd process chamber 16. As such, the glass substrate 100 introduced into the third processing chamber 16 is sufficiently wet, and heterogeneous initial etching is prevented. That is, since the third processing chamber 16 is a hydrofluoric acid gas atmosphere, if the surface of the glass substrate 100 is in a dry state, there is a risk of inhomogeneously eroding by the hydrofluoric acid gas. Since it is protected by water, the homogeneous etching is started in the 3rd process chamber 16 after that.

In the present embodiment, as shown in Figs. 7A to 7C, the water washing nozzle 142 is configured to spray water directly underneath, while the water washing nozzle 144 is upwardly glassed. The substrate 100 is configured to spray water obliquely toward the upstream side of the conveying path. As a result of the water cleaning nozzle 144 being configured to spray water upwards obliquely, as shown in FIGS. 7A and 7B when the glass substrate 100 approaches the water cleaning nozzles 142 and 144. As described above, water can be supplied to the upper surface of the glass substrate 100 from the water washing nozzle 144. For this reason, the water film for protecting from the hydrofluoric acid gas can be formed in the upper surface of the glass substrate 100 quickly. On the other hand, when the glass substrate 100 approaches the water cleaning nozzle 144, since the water sprayed from the water cleaning nozzle 144 reaches the bottom surface of the glass substrate 100, the water cleaning nozzle 144 The bottom surface of the glass substrate 100 may be appropriately wetted while appropriately cleaned.

As described above, by providing the water cleaning nozzles 142 and 144 in the pretreatment chamber 14, the glass substrate 100 in a dry state is prevented from being exposed to the hydrofluoric acid and being unevenly etched. In addition, since the glass substrate 100 is prevented from being caught by the opposing roller 146 and the conveying roller 50 in a dry state, the glass substrate 100 when passing between the opposing roller 146 and the conveying roller 50 is prevented. Scratches or damage to the glass substrate 100 are prevented.

Then, the 2nd relay part 28, the 3rd relay part 30, and the 4th relay part 32 are demonstrated. In the 2nd relay part 28, the 3rd relay part 30, and the 4th relay part 32, the fixed injection pipe 282, the injection pipe 302, and the injection pipe 322 are respectively the upper and lower sides of a conveyance path. It is located at the position. The chemical polishing liquid is injected onto the upper and lower surfaces of the glass substrate 100 by the injection pipe 282, the injection pipe 302, and the injection pipe 322. In this embodiment, the injection pipe 444, the injection pipe 282, the injection pipe 302, and the injection pipe 322 constitute the polishing liquid injection means of the present invention, respectively.

Here, although it is also possible to make the 2nd relay part 28, the 3rd relay part 30, and the 4th relay part 32 into an empty space in glass polishing process, in this embodiment, these 2nd relay dare In the part 28, the 3rd relay part 30, and the 4th relay part 32, the chemical polishing liquid of the same composition is sprayed on the glass substrate 100, too. Therefore, the chemical polishing liquid stays on the glass substrate 100 when passing through the second relay portion 28, the third relay portion 30, and the fourth relay portion 32, or conversely, the second relay portion 28. When passing through the third relay section 30 and the fourth relay section 32, there is no fear that the glass substrate 100 will dry out, and glass polishing of high quality is realized. On the other hand, the injection pipe 282, the injection pipe 302 and the injection pipe 322 of the second relay portion 28, the third relay portion 30 and the fourth relay portion 32 is fixed, but fixed It is also possible to employ a swinging configuration.

The glass substrate 100 includes a third processing chamber 16, a fourth processing chamber 18, a fifth processing chamber 20, a sixth processing chamber 22, a second relay unit 28, and a third relay unit. 30 and the 4th relay part 32 pass in this order, and are chemically polished sequentially. After the chemical polishing of the plurality of stages has been performed, the upper surface of the glass substrate 100 is subjected to the liquid removal process by the air knife 244 disposed at the outlet of the sixth processing chamber 22, and then the water cleaning chamber 24 is disposed in the water cleaning chamber 24. It wash | cleans with the wash water received from the 1 group injection pipe 242 arrange | positioned. Although the cleaning injection pipe 242 is fixed, you may employ | adopt the structure which rockes this.

In any case, a pair of upper and lower air knives 246 are arranged in the final stage of the cleaning process, and the upper and lower surfaces of the glass substrate 100 are quickly dried by the air injected therefrom. And the glass substrate 100 discharged | emitted from the outlet 300 of the water washing chamber 24 is carried out by the worker who waits in the carrying out part 26, and a series of process is completed. Thus, by disposing the separate air knife 244 at the front end of the pair of upper and lower air knives 246, the chemical polishing liquid can be quickly removed from the upper surface of the glass substrate 100, It is possible to effectively prevent the upper surface of the glass substrate 100 from being etched unevenly.

As described above, according to the chemical polishing apparatus 10 according to the present embodiment, chemical polishing is performed in a closed space, and almost all toxic gases such as hydrofluoric acid gas generated in the apparatus are recovered by an exhaust mechanism such as a scrubber. Therefore, hydrofluoric acid gas is hardly diffused around the chemical sheetmaking apparatus 10. As a result, the working environment around the chemical polishing apparatus 10 is significantly improved compared with the case of the batch chemical polishing process. Therefore, there is no fear of deteriorating the health of the worker, and there is no need to pay for the protective equipment.

In addition, since the equipment around the chemical polishing apparatus 10 can be prevented from being corroded by the hydrofluoric acid gas, it is also possible to reduce the maintenance cost of the equipment. That is, it can be said that there is a big advantage that can provide a good working environment to the workers at a low maintenance cost.

In addition, when the single wafer type chemical polishing apparatus 10 is used, there is an advantage that the work efficiency and product quality can be improved as compared with the batch type polishing treatment. In addition, according to the chemical polishing apparatus 10, since plate | board thickness precision improves, the yield stability at the time of scribing is predicted. Moreover, also about cutting surface flat strength, it becomes strong compared with the grinding | polishing process of a batch system. And since there is no loss of hydrofluoric acid due to bubbling, the effect of reducing the cost of hydrofluoric acid by 15% can be expected. In addition, since it is possible to continuously and automatically perform different kinds of polishing treatments on the glass substrate 100, the processing efficiency for the glass substrate 100 is improved.

Here, the state of the glass substrate 100 conveyed by the conveyance roller 50 is demonstrated using FIG. 8 (A) and FIG. 8 (B). Conventionally, in order to avoid the contamination of the glass substrate 100, it was not very recommended to adopt the structure which makes the glass substrate 100 contact the circumferential surface of the conveyance roller 50 directly. However, in this embodiment, even if the glass substrate 100 is directly placed on the circumferential surface of the conveyance roller 50, the research which prevents the glass substrate 100 from being fouled is performed.

First, in this embodiment, a plurality of injection pipes 444 (444U and 444L), injection pipes 282 (282U and 282L), injection pipes 302 (302U and 302L) and injection pipes 322 (322U and 322L). A large amount of the chemical polishing liquid sprayed from the s) always comes into contact with the circumferential surface of the conveying roller 50, so that the circumferential surface of the conveying roller 50 is kept in a wet state, and chemical polishing is performed on the circumferential surface of the conveying roller 50 A thin layer of liquid is formed. At this time, the plurality of injection pipes 444 (444U, 444L), the injection pipes 282 (282U, 282L), the injection pipes 302 (302U, 302L) and the injection pipes 322 (322U, 322L) at least. Chemical polishing processing space (third processing chamber 16, fourth processing chamber 18, fifth processing chamber 20, sixth processing chamber 22, second relay portion 28, third relay portion ( The chemical polishing liquid is sprayed so that the circumferential surfaces of all the transfer rollers 50 of the 30 and the fourth relay portion 32 are in a wet state.

By employing the configuration described in this embodiment, the plurality of injection pipes 444 (444U, 444L), the injection pipes 282 (282U, 282L), the injection pipes 302 (302U, 302L), and the injection pipe 322 ( Since the polishing liquid from 322U, 322L) is ejected to the circumferential surface of the conveying roller 50 in the chemical polishing processing space, the circumferential surface of the conveying roller 50 is maintained in a wet state by the polishing liquid. In addition, since the circumferential surface of the conveying roller 50 is cleaned by the ejected polishing liquid, foreign substances such as sludge are less likely to adhere to the circumferential surface of the conveying roller 50, and the circumferential surface of the conveying roller 50 is always clean. Stays in the state.

By the above structure, the friction coefficient between the circumferential surface of the conveyance roller 50 and the main surface of the glass substrate 100 can be reduced significantly, and the glass substrate 100 comes into contact with the circumferential surface of the conveyance roller 50. It becomes difficult to be fouled by. In addition, since the chemical polishing liquid is also interposed between the main surface of the glass substrate 100 and the circumferential surface of the conveying roller 50, the part which is in contact with the circumferential surface of the conveying roller 50 in the glass substrate 100 also has a It is polished suitably by chemical polishing liquid. As a result, even if the glass substrate 100 is directly placed on the conveyance roller 50 and conveyed, problems such as nonuniformity of the chemical polishing process or deterioration of the quality of the glass substrate 100 become difficult to occur. For this reason, the chemical polishing process can be performed sequentially with respect to a glass substrate suitably, without using a jig.

Furthermore, as shown to FIG. 8 (B), the some injection pipe 444 (444U, 444L), the injection pipe 282 (282U, 282L), the injection pipe 302 (302U, 302L), and injection Pipe 322 (322U, 322L) of the plurality of injection pipes 444L, the injection pipe 282L, the injection pipe 302L, and the injection pipe 322L configured to spray the polishing liquid from the lower side with respect to the polishing liquid injection means. It is preferable to set so that the injection force may become stronger than the injection force of the some injection pipe 444U, the injection pipe 282U, the injection pipe 302U, and the injection pipe 322U comprised so that the injection of the polishing liquid from the upper side. The reason for this is that an upward force to lift the glass substrate 100 upward is applied to the glass substrate 100 by such a configuration. As shown in FIG. 8 (B), when an upward force acts on the glass substrate 100, friction between the main surface of the glass substrate 100 and the circumferential surface of the conveying roller 50 is further reduced.

Thus, since it is comprised so that a foreign material may not adhere to the circumferential surface of the conveyance roller 50, while carrying out the study which reduces the friction force between the circumferential surface of the conveyance roller 50 and the main surface of the glass substrate 100, it is directly Even if the glass substrate 100 is placed on the conveyance roller 50, the glass substrate 100 is hardly damaged. Therefore, it becomes easy to convey the glass substrate 100 horizontally along the arrangement | positioning of the conveyance roller 50. FIG.

Although the above-mentioned embodiment demonstrated the example which performs a pit suppression process and a thinning process with respect to the glass substrate 100, in addition, the process which cut | disconnects the glass substrate 100 to which the patterned resist was provided, and the glass substrate 100 It is also possible to perform the process of cleaning the surface of the chemical polishing apparatus 10 with the chemical polishing apparatus 10.

The description of the foregoing embodiments is to be considered in all respects only as illustrative and not restrictive. The scope of the invention is set forth in the claims rather than the foregoing embodiments. Also, the scope of the present invention is intended to include all modifications within the meaning and range equivalent to the claims.

2: second polishing treatment unit
4: first polishing treatment unit
10: chemical polishing machine
12, 62: import
14, 64: pretreatment chamber
16: third processing chamber
18: fourth processing chamber
20: fifth processing chamber
22: sixth processing chamber
24, 70: water cleaning chamber
26: carrying out
28: second relay
30: third relay unit
32: fourth relay
50: conveying roller
66: first processing chamber
68: second processing chamber
72: first relay

Claims (3)

A chemical polishing apparatus configured to perform chemical polishing treatment on a plurality of glass substrates continuously conveyed along a conveying path having a plurality of rollers,
A first polishing treatment portion configured to perform a chemical polishing treatment on the glass substrate conveyed along the conveyance path by a first treatment liquid;
A second polishing treatment portion configured to perform chemical polishing treatment on the glass substrate conveyed along the conveyance path by a second treatment liquid different from the first treatment liquid;
And a cleaning unit configured to clean the processing liquid attached to the glass substrate, which is disposed on an upstream side of the second polishing processing unit while being downstream of the first polishing processing unit in the conveying path,
And a pretreatment section configured to wet the surface of the glass substrate before being introduced into the first polishing treatment section at least upstream of the first polishing treatment section. A chemical polishing apparatus configured to perform chemical polishing treatment on a plurality of glass substrates continuously conveyed along a conveying path having a plurality of rollers,
A first polishing treatment portion configured to perform a chemical polishing treatment on the glass substrate conveyed along the conveyance path by a first treatment liquid;
A second polishing treatment portion configured to perform chemical polishing treatment on the glass substrate conveyed along the conveyance path by a second treatment liquid different from the first treatment liquid;
And a cleaning unit configured to clean the processing liquid attached to the glass substrate, which is disposed on an upstream side of the second polishing processing unit while being downstream of the first polishing processing unit in the conveying path,
The first polishing treatment liquid is for the treatment of suppressing the pit of the glass substrate surface, the second polishing treatment liquid is for the treatment of thinning the glass,
The first polishing processing unit has a plurality of processing chambers configured to spray the first processing liquid onto the glass substrate, and a relay unit configured to relay each processing chamber while simultaneously spraying the first processing liquid onto the glass substrate,
Wherein the second polishing treatment portion has a plurality of processing chambers configured to spray the second processing liquid against the glass substrate, and a relay configured to relay each processing chamber and simultaneously spray the second processing liquid onto the glass substrate. A chemical polishing apparatus. A chemical polishing apparatus configured to perform chemical polishing treatment on a plurality of glass substrates continuously conveyed along a conveying path having a plurality of rollers,
A first polishing treatment portion configured to perform a chemical polishing treatment on the glass substrate conveyed along the conveyance path by a first treatment liquid;
A second polishing treatment portion configured to perform chemical polishing treatment on the glass substrate conveyed along the conveyance path by a second treatment liquid different from the first treatment liquid;
And a cleaning unit configured to clean the processing liquid attached to the glass substrate, which is disposed on an upstream side of the second polishing processing unit while being downstream of the first polishing processing unit in the conveying path,
The first polishing processing unit has a plurality of processing chambers configured to spray the first processing liquid onto the glass substrate, and a relay unit configured to relay each processing chamber while simultaneously spraying the first processing liquid onto the glass substrate,
Wherein the second polishing treatment portion has a plurality of processing chambers configured to spray the second processing liquid against the glass substrate, and a relay configured to relay each processing chamber and simultaneously spray the second processing liquid onto the glass substrate. A chemical polishing apparatus.

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