TWI383963B - Process for producing polished glass substrate,polished glass substrate and surface-polishing liquor - Google Patents

Process for producing polished glass substrate,polished glass substrate and surface-polishing liquor Download PDF

Info

Publication number
TWI383963B
TWI383963B TW096114959A TW96114959A TWI383963B TW I383963 B TWI383963 B TW I383963B TW 096114959 A TW096114959 A TW 096114959A TW 96114959 A TW96114959 A TW 96114959A TW I383963 B TWI383963 B TW I383963B
Authority
TW
Taiwan
Prior art keywords
glass substrate
polishing liquid
polishing
weight
glass
Prior art date
Application number
TW096114959A
Other languages
Chinese (zh)
Other versions
TW200804211A (en
Inventor
Kondoh Nobuhiro
Kojima Hiroaki
Fujii Yasuhisa
Yamaguchi Takashi
Original Assignee
Sharp Kk
Kuritec Service Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk, Kuritec Service Co Ltd filed Critical Sharp Kk
Publication of TW200804211A publication Critical patent/TW200804211A/en
Application granted granted Critical
Publication of TWI383963B publication Critical patent/TWI383963B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C03C15/02Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0095Solution impregnating; Solution doping; Molecular stuffing, e.g. of porous glass
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133302Rigid substrates, e.g. inorganic substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)

Description

研磨玻璃基板之製造方法,研磨玻璃基板及表面研磨液Method for manufacturing a ground glass substrate, polishing a glass substrate and a surface polishing liquid

本發明係關於藉由將玻璃基板浸漬於含有氫氟酸之化學研磨液中,進行表面研磨至所需的基板厚度之研磨玻璃基板之製造方法;尤其是關於適於製造液晶顯示器用玻璃基板之製造方法。The present invention relates to a method for producing a ground glass substrate by immersing a glass substrate in a chemical polishing liquid containing hydrofluoric acid and performing surface polishing to a desired substrate thickness; in particular, it is suitable for manufacturing a glass substrate for liquid crystal display. Production method.

近年來,液晶顯示器用玻璃基板(以下簡稱為「玻璃基板」)基於降低顯示器製品之能源消耗量的目的,玻璃基板之厚度(以下簡稱為「玻璃厚度」)以儘量薄為佳。因此,習知係採用藉由含有氫氟酸之化學研磨液,對玻璃基板之單面或雙面進行化學研磨,以使玻璃厚度薄型化之研磨玻璃基板之製造方法。In recent years, the glass substrate for liquid crystal display (hereinafter simply referred to as "glass substrate") is preferably as thin as possible for the purpose of reducing the energy consumption of the display product, and the thickness of the glass substrate (hereinafter simply referred to as "glass thickness"). Therefore, a method of manufacturing a ground glass substrate in which a glass polishing liquid is thinned by chemical polishing on one or both sides of a glass substrate by a chemical polishing liquid containing hydrofluoric acid is conventionally used.

例如於專利文獻1中(日本專利特開2003-20255號公報),揭示有藉由含有氫氟酸與選自鹽酸、硫酸、磷酸、硝酸中之1種以上的無機酸之化學加工液進行研磨,例示之實施例為使用含有氫氟酸5%、鹽酸10%、硝酸5%之化學加工液進行研磨至所需的玻璃基板厚度。然而,此等習知技術中,由於係以單一步驟研磨至所需之玻璃基板厚度,雖可研磨加工至所需之玻璃厚度,惟,於玻璃基板表面(以下簡稱為「玻璃表面」)之平滑性方面將產生問題。尤其,原本存在於玻璃表面之微裂,於化學研磨過程中會成長為大凹陷(以下稱為「凹痕(dimple)」),致引起製品不良之嚴重問題,而以上述習知技術將難以抑制此等凹痕 之發生。For example, Patent Document 1 (Japanese Laid-Open Patent Publication No. 2003-20255) discloses a polishing process using a chemical processing liquid containing hydrofluoric acid and one or more inorganic acids selected from the group consisting of hydrochloric acid, sulfuric acid, phosphoric acid, and nitric acid. An exemplified embodiment is to grind to a desired glass substrate thickness using a chemical processing fluid containing 5% hydrofluoric acid, 10% hydrochloric acid, and 5% nitric acid. However, in such conventional techniques, since it is ground to a desired thickness of the glass substrate in a single step, it can be polished to a desired glass thickness, but on the surface of the glass substrate (hereinafter simply referred to as "glass surface"). There will be problems with smoothness. In particular, microcracks originally present on the surface of the glass may grow into large depressions (hereinafter referred to as "dimples") during the chemical polishing process, causing serious problems of defective products, and it is difficult to use the above-mentioned conventional techniques. Suppress these dents It happened.

作為用以解決此等問題點之手段,例如,於專利文獻2(日本專利特開2005-343742號公報)中揭示之方法為:用含有氫氟酸10~30重量%及硫酸20~50重量%之表面研磨液,以1μm/秒以上的研磨速度研磨數秒鐘,進行用以抑制直徑40μm以上的損傷不致擴大為直徑100μm以上的前段研磨之表面研磨,然後,浸漬於含有中~低濃度之氫氟酸的後段研磨液中,進行後段研磨至所需的玻璃基板厚度。然而,依據此方法,於前段研磨之表面研磨中雖可抑制凹痕之擴大,但由於與研磨液之接觸時間短,故難以控制為對玻璃基板全體均一地進行研磨,於平滑部份會產生數μm之段差,將有其於後段研磨中會擴大的問題。As a means for solving such a problem, for example, the method disclosed in Patent Document 2 (Japanese Patent Laid-Open Publication No. 2005-343742) is: using 10 to 30% by weight of hydrofluoric acid and 20 to 50% by weight of sulfuric acid. % of the surface polishing liquid is polished at a polishing rate of 1 μm/sec or more for a few seconds, and is subjected to surface polishing for suppressing damage of a diameter of 40 μm or more from being expanded to a diameter of 100 μm or more, and then immersed in a medium to low concentration. In the latter stage of hydrofluoric acid, the latter stage is ground to the desired thickness of the glass substrate. However, according to this method, although the enlargement of the dent is suppressed in the surface polishing of the front stage polishing, since the contact time with the polishing liquid is short, it is difficult to control the entire glass substrate to be uniformly polished, and the smooth portion is generated. A step difference of several μm will have a problem that it will expand in the latter stage of grinding.

又,於專利文獻3(日本專利特開2004-77640號公報)中,曾提案之方法為:在玻璃基板之化學研磨中使用化學研磨速度不同之複數的研磨液,依序由研磨速度快的研磨液至慢的研磨液進行數次研磨處理’藉此抑制凹痕之產生。然而,依據此方法,即使可抑制凹痕之產生,卻須繁多的步驟,由生產性、設備成本等方面考量,將有不符經濟效益的問題。In the method of chemical polishing of a glass substrate, a plurality of polishing liquids having different chemical polishing rates are used, and the polishing rate is fast in order. The polishing liquid is subjected to a number of grinding treatments to a slow polishing liquid, thereby suppressing the generation of dents. However, according to this method, even if the generation of dents can be suppressed, a large number of steps are required, which are considered to be inconsistent with economic benefits from the viewpoints of productivity and equipment cost.

又,於專利文獻4(日本專利特開2005-11894號公報)中,曾提案之方法為:於對玻璃基板進行化學研磨時,先浸漬於不與研磨液反應之液體(惰性液體)中,以惰性液體填充存在玻璃表面之細孔,再進行化學研磨,藉此抑制細孔成長為凹痕;惰性液體之例示為全氟烷基化合物等。然 而,依據此方法,即使可抑制凹痕之產生,由於將產生含有有機化合物之廢水,故有必須對其進行廢水處理的問題。Further, in Patent Document 4 (Japanese Laid-Open Patent Publication No. 2005-11894), a method proposed is: when chemically polishing a glass substrate, first immersing in a liquid (inert liquid) which does not react with the polishing liquid, The pores present on the surface of the glass are filled with an inert liquid, and then chemically polished to suppress the growth of pores into pits; an example of the inert liquid is a perfluoroalkyl compound or the like. Of course On the other hand, according to this method, even if the generation of dents can be suppressed, since wastewater containing an organic compound is generated, there is a problem that it is necessary to carry out wastewater treatment.

[專利文獻1]日本專利特開2003-20255號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-20255

[專利文獻2]日本專利特開2005-343742號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-343742

[專利文獻3]日本專利特開2004-77640號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2004-77640

[專利文獻4]日本專利特開2005-11894號公報[Patent Document 4] Japanese Patent Laid-Open Publication No. 2005-11894

本發明之課題在於解決此等習知技術之問題,提供:抑制凹痕之成長並對玻璃基板進行表面研磨,以得到無凹痕與段差之具有平滑玻璃表面的玻璃基板之製造方法;及藉此方法所製造之研磨玻璃基板,以及表面研磨液。An object of the present invention is to solve the problems of the prior art, and to provide a method for manufacturing a glass substrate having a smooth glass surface without inhibiting the growth of the dent and surface-polishing the glass substrate to obtain no dents and steps; The ground glass substrate produced by this method, and the surface polishing liquid.

本發明為下述之研磨玻璃基板之製造方法、研磨玻璃基板及表面研磨液。The present invention relates to a method for producing a ground glass substrate, a polished glass substrate, and a surface polishing liquid.

(1)一種研磨玻璃基板之製造方法,係將玻璃基板浸漬於含有氫氟酸之研磨液中,對表面進行化學研磨以製造研磨玻璃基板者;其特徵在於,包含表面平滑化步驟,係將玻璃基板浸漬於含有40~90重量%硫酸及0.4~4重量%氫氟酸之表面研磨液中並進行表面研磨,抑制凹痕成長而形成平滑的玻璃表面。(1) A method for producing a ground glass substrate, wherein a glass substrate is immersed in a polishing liquid containing hydrofluoric acid, and a surface is chemically polished to produce a polished glass substrate; and the surface smoothing step is included The glass substrate is immersed in a surface polishing liquid containing 40 to 90% by weight of sulfuric acid and 0.4 to 4% by weight of hydrofluoric acid, and is subjected to surface polishing to suppress the growth of the dents to form a smooth glass surface.

(2)一種研磨玻璃基板之製造方法,係將玻璃基板浸漬於含有氫氟酸之研磨液中,對表面進行化學研磨以製造研 磨玻璃基板者;其特徵在於,包含下述步驟:表面平滑化步驟,係將玻璃基板浸漬於含有40~90重量%硫酸及0.4~4重量%氫氟酸之表面研磨液中並進行表面研磨,抑制凹痕成長而形成平滑的玻璃表面;後段研磨步驟,係將經表面平滑化之玻璃基板浸漬於含有2~30重量%氫氟酸之後段研磨液,進行後段研磨至所需的基板厚度。(2) A method for producing a ground glass substrate by immersing a glass substrate in a polishing liquid containing hydrofluoric acid, and chemically grinding the surface to produce a ground A glass-grinding substrate is characterized in that it comprises the following steps: a surface smoothing step of immersing a glass substrate in a surface polishing liquid containing 40 to 90% by weight of sulfuric acid and 0.4 to 4% by weight of hydrofluoric acid and performing surface grinding. Suppressing the growth of the dent to form a smooth glass surface; in the subsequent grinding step, the surface smoothed glass substrate is immersed in a slurry containing 2 to 30% by weight of hydrofluoric acid, and then ground to a desired substrate thickness. .

(3)如上述(1)或(2)之方法,其中,表面研磨液為含有50~85重量%硫酸及0.5~4重量%氫氟酸之研磨液。(3) The method according to (1) or (2) above, wherein the surface polishing liquid is a polishing liquid containing 50 to 85% by weight of sulfuric acid and 0.5 to 4% by weight of hydrofluoric acid.

(4)如上述(1)~(3)中任一方法,其中,玻璃基板為液晶顯示器用玻璃基板。(4) The method according to any one of (1) to (3) above wherein the glass substrate is a glass substrate for a liquid crystal display.

(5)一種研磨玻璃基板,係藉由上述(1)至(4)中任一項之方法所製造之研磨玻璃基板,其係凹痕之成長得到抑制,並具有平滑的玻璃表面。(5) A ground glass substrate produced by the method according to any one of the above (1) to (4), wherein the growth of the dent is suppressed and the surface of the glass is smooth.

(6)一種表面研磨液,係用以將玻璃基板浸漬並進行表面研磨,抑制凹痕之成長而形成平滑的玻璃表面者;其係含有40~90重量%硫酸及0.4~4重量%氫氟酸之表面研磨液。(6) A surface polishing liquid for immersing a glass substrate and performing surface polishing to suppress growth of dents to form a smooth glass surface; the system comprises 40 to 90% by weight of sulfuric acid and 0.4 to 4% by weight of hydrogen fluoride. Acid surface grinding fluid.

作為本發明所製造之玻璃基板可舉出:液晶顯示器、有機電致發光顯示器、電漿面板顯示器等之平面顯示器用玻璃基板,尤其適於液晶顯示器用玻璃基板。玻璃基板之材質,有如鋁硼矽酸玻璃基板等上述玻璃基板所通常使用者,皆為研磨之對象。The glass substrate to be produced by the present invention is a glass substrate for a flat panel display such as a liquid crystal display, an organic electroluminescence display or a plasma panel display, and is particularly suitable for a glass substrate for a liquid crystal display. The material of the glass substrate, such as a glass substrate such as an aluminoborosilicate glass substrate, is generally used for polishing.

本發明之研磨玻璃基板之製造方法中,藉由將玻璃基板浸漬於表面研磨液中,以化學研磨進行表面研磨之表面平 滑化步驟,將可抑制凹痕之成長而形成有平滑的玻璃表面之玻璃基板。此等表面平滑化步驟中可使用之表面研磨液,可舉出含有40~90重量%硫酸及0.4~4重量%氫氟酸之表面研磨液,尤以含有50~85重量%硫酸及0.5~4重量%氫氟酸之表面研磨液為佳。表面研磨液之其餘部份主要為水,亦可含有其他溶劑、界面活性劑、安定劑等添加劑。於表面研磨液中,硫酸濃度或氫氟酸濃度若低於上述下限,則抑制凹痕成長之作用變弱,而硫酸濃度或氫氟酸濃度若高於上述上限,則玻璃表面容易產生段差,故不佳。In the method for producing a ground glass substrate of the present invention, the surface of the surface is polished by chemical polishing by immersing the glass substrate in the surface polishing liquid. In the sliding step, a glass substrate having a smooth glass surface can be formed by suppressing the growth of the dent. The surface polishing liquid which can be used in the surface smoothing step includes a surface polishing liquid containing 40 to 90% by weight of sulfuric acid and 0.4 to 4% by weight of hydrofluoric acid, particularly 50 to 85% by weight of sulfuric acid and 0.5 to 0.5% by weight. A surface grinding liquid of 4% by weight of hydrofluoric acid is preferred. The remainder of the surface polishing liquid is mainly water, and may also contain other solvents, surfactants, stabilizers and the like. When the concentration of sulfuric acid or the concentration of hydrofluoric acid in the surface polishing liquid is lower than the lower limit, the effect of suppressing the growth of the dent is weak, and if the concentration of sulfuric acid or the concentration of hydrofluoric acid is higher than the above upper limit, the surface of the glass is likely to be in a stepwise manner. It is not good.

表面平滑化步驟中之表面研磨液的溫度並無特別限定,可為常溫,惟,溫度愈高、凹痕之抑制效果愈大。因此,可加溫至30~50℃下進行表面平滑化步驟。研磨液之浸漬時宜為1~90分鐘,以5~30分鐘為佳。若未滿1分鐘,凹痕之成長抑制效果不佳,而在90分鐘以上之長時間浸漬的情況下,玻璃基板之研磨加工的生產性會降低。於此表面平滑化步驟雖可進行表面研磨至所需的基板厚度,惟,於組合後段研磨步驟之情況下,於表面平滑化步驟並不須研磨至所需的基板厚度,只要可得到平滑的玻璃表面即可,故可設為上述之浸漬時間。The temperature of the surface polishing liquid in the surface smoothing step is not particularly limited, and may be normal temperature, but the higher the temperature, the greater the suppression effect of the dent. Therefore, the surface smoothing step can be performed by heating to 30 to 50 °C. The immersion of the polishing liquid should be 1 to 90 minutes, preferably 5 to 30 minutes. If it is less than 1 minute, the growth inhibition effect of the dent is not good, and in the case of immersion for 90 minutes or more, the productivity of the polishing process of the glass substrate is lowered. The surface smoothing step can be surface-polished to a desired substrate thickness. However, in the case of combining the subsequent polishing steps, the surface smoothing step does not have to be ground to a desired substrate thickness as long as smoothness can be obtained. The glass surface is sufficient, so it can be set as the above immersion time.

藉由表面平滑化步驟中之表面研磨液所進行之表面研磨,可於抑制凹痕之成長下形成具有平滑玻璃表面之玻璃基板。抑制凹痕之成長而形成具有平滑的玻璃表面的機制尚未闡明,但推測如下:原本存在玻璃表面上之微裂(microcrack)在化學研磨過程中將之快速成長、擴大,而 作為抑制此情況之機制為,其與含有適當濃度之氫氟酸的高黏性研磨液接觸,使氟化物析出至微裂中並將其封塞住,使平坦部先進行研磨而消除裂痕。By the surface polishing by the surface polishing liquid in the surface smoothing step, it is possible to form a glass substrate having a smooth glass surface while suppressing the growth of the dent. The mechanism for suppressing the growth of dents to form a smooth glass surface has not been elucidated, but it is presumed as follows: Microcracks originally present on the surface of the glass rapidly grow and expand during chemical polishing. As a mechanism for suppressing this, it is in contact with a highly viscous polishing liquid containing an appropriate concentration of hydrofluoric acid, and the fluoride is precipitated into the microcracks and sealed, and the flat portion is first ground to eliminate cracks.

於專利文獻2中,曾揭示之方法為:使用含有氫氟酸10~30重量%及硫酸20~50重量%之表面研磨液,以1μm/秒以上之研磨速度進行研磨數秒鐘,以進行用以抑制直徑40μm以上的損傷擴大為直徑100μm以上的前段研磨之表面研磨;但記載有:依據此方法,於前段研磨之表面研磨中雖可抑制損傷之擴大,但由於與研磨液接觸時間短,故難以控制為對玻璃基板全體均一地進行研磨,於平滑部份中容易產生數μm的段差,此段差將於後段研磨中擴大。Patent Document 2 discloses a method of using a surface polishing liquid containing 10 to 30% by weight of hydrofluoric acid and 20 to 50% by weight of sulfuric acid, and polishing at a polishing rate of 1 μm/sec or more for several seconds. The surface of the front-stage polishing having a diameter of 100 μm or more is expanded to prevent the damage from being expanded to a diameter of 100 μm or more. However, according to this method, although the damage of the surface can be suppressed in the surface polishing of the front-stage polishing, the contact time with the polishing liquid is short. Therefore, it is difficult to control the entire glass substrate to be uniformly polished, and a step of several μm is likely to occur in the smooth portion, and this step is enlarged in the subsequent polishing.

專利文獻2中之此等問題點,可認為原因在於氫氟酸濃度較高。對玻璃之溶解具有效果者為氫氟酸,基本上,氫氟酸濃度愈高、溶出速度愈快,控制變得困難。硫酸等其他的酸對玻璃之溶出狀態之調整雖有效果,但對玻璃之溶解本身則無直接效果。These problems in Patent Document 2 are considered to be due to the high concentration of hydrofluoric acid. Hydrofluoric acid is effective for the dissolution of glass. Basically, the higher the concentration of hydrofluoric acid, the faster the dissolution rate, and the control becomes difficult. Other acids such as sulfuric acid have an effect on the adjustment of the dissolution state of the glass, but have no direct effect on the dissolution of the glass itself.

本發明中,於表面平滑化步驟中,藉由使用低濃度的氫氟酸以使玻璃之溶出均一化。此時,藉由含有高濃度的硫酸作成為高粘性之研磨液,藉此,將析出於微裂內之氟化物閉塞,先進行平坦部的研磨以消除裂痕,而可形成無凹痕及段差之平滑的玻璃表面。於表面平滑化步驟中,於形成平滑的玻璃表面後,即使以高氫氟酸濃度之後段研磨液進行後段研磨至所需厚度,亦可維持平滑的玻璃表面。In the present invention, in the surface smoothing step, the dissolution of the glass is uniformized by using a low concentration of hydrofluoric acid. In this case, by containing a high concentration of sulfuric acid as a highly viscous polishing liquid, the fluoride which is deposited in the microcrack is occluded, and the flat portion is first polished to eliminate cracks, thereby forming no dents and steps. Smooth glass surface. In the surface smoothing step, after forming a smooth glass surface, a smooth glass surface can be maintained even after the latter polishing to a desired thickness with a high hydrofluoric acid concentration.

於表面平滑化步驟中藉由浸漬於表面研磨液中,抑制凹 痕之成長而形成了平滑玻璃表面之基板,將可在後段研磨步驟中浸漬於含有中~低濃度氫氟酸之後段研磨液中,進行後段研磨至所需的基板厚度,藉此製造具有目標基板厚度之研磨玻璃基板。此後段研磨液,為含有氫氟酸2~30重量%(以5~30重量%為佳)之研磨液,亦可含有鹽酸、硫酸、磷酸、硝酸等之氫氟酸以外之無機酸,無機酸之合計量宜為4~40重量%,以10~20重量%為佳。後段研磨液之其餘部份主要為水,亦可含有其他溶劑、界面活性劑、安定劑等添加劑。In the surface smoothing step, by immersing in the surface polishing liquid, the concave is suppressed The substrate which grows to form a smooth glass surface, can be immersed in a polishing liquid having a medium to low concentration hydrofluoric acid in a subsequent polishing step, and is subjected to post-stage polishing to a desired substrate thickness, thereby producing a target. A ground glass substrate having a substrate thickness. The polishing liquid in the subsequent stage is a polishing liquid containing 2 to 30% by weight of hydrofluoric acid (preferably 5 to 30% by weight), and may further contain inorganic acid other than hydrofluoric acid such as hydrochloric acid, sulfuric acid, phosphoric acid or nitric acid, and inorganic The total amount of acid is preferably 4 to 40% by weight, preferably 10 to 20% by weight. The remainder of the latter slurry is mainly water, and may also contain other solvents, surfactants, stabilizers and the like.

後段研磨步驟為習知所進行的研磨,用以進行研磨至所需的基板厚度以製造研磨玻璃基板的方法。因而,於後段研磨步驟中,可採用習知所施行之研磨至所需的玻璃基板厚度之方法中之條件、操作等。後段研磨步驟中之後段研磨液之溫度並無特別限定,可為常溫,通常係於15~50℃左右進行後段研磨步驟。後段研磨液之浸漬時間為30~150分鐘的程度,為研磨至目標玻璃基板厚度所須之時間。The post-grinding step is a conventional grinding process for grinding to a desired substrate thickness to produce a method of grinding a glass substrate. Therefore, in the post-stage grinding step, conditions, operations, and the like which are conventionally performed in the method of grinding to the desired thickness of the glass substrate can be employed. The temperature of the polishing liquid in the subsequent stage in the subsequent polishing step is not particularly limited, and may be a normal temperature, and is usually carried out at a temperature of about 15 to 50 ° C for the subsequent stage polishing step. The immersion time of the latter polishing liquid is 30 to 150 minutes, which is the time required for polishing to the thickness of the target glass substrate.

藉由在後段研磨步驟中研磨至所需的玻璃基板厚度,可製造目標玻璃基板厚度之研磨玻璃基板。此情況下,於本發明中,以表面平滑化步驟抑制凹痕之成長而進行表面研磨,藉此可得到平滑的玻璃表面,故於此狀態下,即使於後段研磨步驟中研磨至所需的玻璃基板厚度,玻璃表面亦不會產生凹痕與段差,可得到具有平滑玻璃表面之研磨玻璃基板。因此,藉由以上述方法進行液晶顯示器用玻璃基板之化學研磨,可提供抑制凹痕產生且維持良好表面狀態 之高品質製品。The ground glass substrate of the target glass substrate thickness can be manufactured by grinding to the desired thickness of the glass substrate in the subsequent stage grinding step. In this case, in the present invention, surface polishing is performed by suppressing the growth of the dent by the surface smoothing step, whereby a smooth glass surface can be obtained, so in this state, even in the subsequent polishing step, the polishing is performed to a desired level. The thickness of the glass substrate does not cause dents and step on the surface of the glass, and a ground glass substrate having a smooth glass surface can be obtained. Therefore, by performing chemical polishing of the glass substrate for liquid crystal display by the above method, it is possible to provide suppression of dent generation and maintain a good surface state. High quality products.

依據本發明,藉由在表面平滑化步驟中將玻璃基板浸漬於含有40~90重量%硫酸及0.4~4重量%氫氟酸之表面研磨液中並進行表面研磨,將抑制凹痕成長而進行表面研磨,可得到無凹痕與段差之具有平滑玻璃表面之玻璃基板。According to the present invention, by immersing the glass substrate in a surface polishing liquid containing 40 to 90% by weight of sulfuric acid and 0.4 to 4% by weight of hydrofluoric acid in the surface smoothing step and performing surface polishing, the growth of the dent is suppressed. The surface is ground to obtain a glass substrate having a smooth glass surface without dents and steps.

又,於表面平滑化步驟中,將經表面研磨之表面研磨玻璃基板,藉由在後段研磨步驟中研磨至所需之玻璃基板厚度,可製造於玻璃表面不產生凹痕與段差之具有平滑玻璃表面之研磨玻璃基板。Moreover, in the surface smoothing step, the surface-polished surface of the glass substrate is polished to a desired thickness of the glass substrate in the subsequent grinding step to produce a smooth glass having no dents and steps on the glass surface. A ground glass substrate on the surface.

本發明中得到之研磨玻璃基板,係於玻璃表面不產生凹痕與段差,具有平滑的玻璃表面,並有所需的基板厚度。The ground glass substrate obtained in the present invention has no unevenness and step on the surface of the glass, has a smooth glass surface, and has a desired substrate thickness.

本發明之表面平滑化步驟中所用之表面研磨液,由於含有前述濃度之硫酸及氫氟酸,故藉由將玻璃基板浸漬於其中並進行表面研磨,將可於抑制凹痕成長而形成平滑的玻璃表面。Since the surface polishing liquid used in the surface smoothing step of the present invention contains sulfuric acid and hydrofluoric acid at the above concentrations, by immersing the glass substrate therein and performing surface polishing, it is possible to suppress the growth of the dents and form a smooth Glass surface.

以下,針對本發明之實施形態之液晶顯示器用玻璃基板的製造方法之一例,藉圖1進行說明,惟,本發明並非限定於實施形態中所用之玻璃基板的種類、研磨液槽之型態、玻璃基板之保持具等各種器具、裝置類之運用方法。Hereinafter, an example of a method for producing a glass substrate for a liquid crystal display according to an embodiment of the present invention will be described with reference to FIG. 1. However, the present invention is not limited to the type of the glass substrate used in the embodiment, the type of the polishing liquid tank, and The use of various instruments and devices such as holders for glass substrates.

圖1中,1為表面研磨液槽、2為第1水洗槽、3為後段研磨槽、4為第2水洗槽、5為最終水洗槽。In Fig. 1, 1 is a surface polishing liquid tank, 2 is a first water washing tank, 3 is a rear stage grinding tank, 4 is a second water washing tank, and 5 is a final water washing tank.

液晶顯示器用玻璃基板20有各種尺寸。如圖1之順序 依序配置:裝滿表面研磨液6之表面平滑化槽1、裝滿洗淨水7之第1水洗槽2、與裝滿後段研磨液8之後段研磨槽3、裝滿洗淨水9之第2水洗槽4、與裝滿洗淨水10之最終水洗槽5;將容納玻璃基板20之卡座容器21依序進出表面平滑化槽1、第1水洗槽2、後段研磨槽3、第2水洗槽4及最終水洗槽5而進行化學研磨。The glass substrate 20 for liquid crystal displays has various sizes. As shown in Figure 1 The surface smoothing tank 1 filled with the surface polishing liquid 6, the first water washing tank 2 filled with the washing water 7, the grinding tank 3 after the finishing stage 8 is filled, and the washing water 9 is filled. The second water washing tank 4 and the final water washing tank 5 filled with the washing water 10; the deck container 21 accommodating the glass substrate 20 is sequentially introduced into and out of the surface smoothing tank 1, the first water washing tank 2, the rear grinding tank 3, and the 2 The water washing tank 4 and the final water washing tank 5 are chemically polished.

首先,作為表面平滑化步驟,係將卡座21浸漬於裝滿表面研磨液6之表面平滑化槽1中,由送氣裝置11以氮氣或空氣之吹氣(gas bubbling)等之手段攪拌表面研磨液6而進行表面研磨。表面平滑化槽1之浸漬時間宜為1~90分鐘,以5~30分鐘為佳。若為1分鐘以下,凹痕成長之抑制效果不佳,90分鐘以上之長時間浸漬,則會造成玻璃基板20之研磨加工之生產性降低,故不佳。又,於表面平滑化步驟中之表面研磨液6之溫度並無特別限定,已知溫度愈高,凹痕之抑制效果愈佳。液溫方面,可將表面研磨液6加溫至30~50℃而進行。First, as a surface smoothing step, the cartridge 21 is immersed in the surface smoothing tank 1 filled with the surface polishing liquid 6, and the surface is ground by the air supply device 11 by means of gas or gas bubbling. The liquid 6 was subjected to surface grinding. The immersion time of the surface smoothing tank 1 is preferably from 1 to 90 minutes, preferably from 5 to 30 minutes. If it is 1 minute or less, the effect of suppressing the growth of the dent is not good, and if it is immersed for a long time of 90 minutes or longer, the productivity of the polishing process of the glass substrate 20 is lowered, which is not preferable. Further, the temperature of the surface polishing liquid 6 in the surface smoothing step is not particularly limited, and it is known that the higher the temperature, the better the suppression effect of the dent. In terms of liquid temperature, the surface polishing liquid 6 can be heated to 30 to 50 ° C.

接著,自表面平滑化槽1取出卡座21後立即浸漬於第1水洗槽2中,由送氣裝置12以吹氣等之手段攪拌,將附著於表面20之表面研磨液以洗淨水7洗淨除去。接著自第1水洗槽2取出卡座21,浸漬到裝滿後段研磨液8之後段研磨槽3,進行後段研磨步驟之後段研磨。此時後段研磨液8較佳係藉由送氣裝置13之吹氣等之手段或用以循環研磨液等之手段,保持均一的流動。流動若不足,於玻璃基板20表面會蓄積析出物,致使研磨速度發生不 均而導致研磨厚度不均一,使得表面加工度不良。由後段研磨液8所進行之處理,可依預先訂定之玻璃厚度而設定研磨時間。Then, the card seat 21 is taken out from the surface smoothing tank 1 and immediately immersed in the first water washing tank 2, and the air blowing device 12 is stirred by means of blowing or the like, and the surface polishing liquid adhering to the surface 20 is washed with the washing water 7. Net removal. Next, the cartridge 21 is taken out from the first washing tank 2, and immersed in the grinding tank 3 after the finishing of the polishing liquid 8 in the subsequent stage, and the polishing is performed in the subsequent stage polishing step. At this time, the polishing liquid 8 in the subsequent stage is preferably kept in a uniform flow by means of blowing by the air supply means 13 or by means for circulating the polishing liquid or the like. If the flow is insufficient, precipitates will accumulate on the surface of the glass substrate 20, causing the polishing rate to not occur. Both of them result in uneven grinding thickness, resulting in poor surface finish. The polishing time is performed by the polishing liquid 8 in the subsequent stage, and the polishing time can be set according to the predetermined glass thickness.

於後段研磨槽3中完成後段研磨後立即取出卡座21,浸漬到裝滿洗淨水9之第2水洗槽4中,對基板20進行水洗。洗淨水可由自送氣裝置14之吹氣機進行攪拌,或使洗淨水循環以提高水洗效果。最後,將卡座21移至最終水洗槽5中,進行與第1、第2水洗槽2、4之同樣的操作,完成化學研磨。Immediately after the completion of the subsequent polishing in the subsequent grinding tank 3, the cartridge 21 is taken out and immersed in the second washing tank 4 filled with the washing water 9, and the substrate 20 is washed with water. The washing water may be stirred by a blower from the air supply device 14, or the washing water may be circulated to improve the water washing effect. Finally, the cartridge 21 is moved to the final washing tank 5, and the same operations as those of the first and second water washing tanks 2, 4 are performed to complete the chemical polishing.

[實施例][Examples] (實施例1~9)(Examples 1 to 9)

鋪設適當粗度的砂紙,在其上水平放置將鋁硼矽酸玻璃裁切成10cm方塊者,再於其上施加特定的荷重,賦予玻璃表面人造刮痕作為試樣,驗證凹痕抑制效果。A sandpaper of appropriate thickness was laid, and aluminoboroic acid glass was cut horizontally into 10 cm squares, and a specific load was applied thereto to give a scratch on the surface of the glass as a sample to verify the dent suppression effect.

試驗裝置係作成為模擬圖1之小型基板收納卡座21、表面平滑化槽1、後段研磨槽3、第1水洗槽2、第2水洗槽4及最終水洗槽5,對前述試樣以圖1之方法進行研磨。表面平滑化步驟中之表面平滑化槽1之表面研磨液6之組成、溫度及浸漬時間示於表1。後段研磨步驟中之由後段研磨槽3之後段研磨液8所進行之研磨,係藉由含有氫氟酸10重量%及硫酸5重量%之研磨液,於常溫下加工約50分鐘。研磨後,對試樣表面以顯微鏡觀察以人造刮痕為起點所成長之凹痕之大小,並計算其數目。又,對玻璃基板之表面狀態以目視觀察。結果示於表1。The test apparatus is used to simulate the small substrate storage deck 21, the surface smoothing tank 1, the rear grinding tank 3, the first water washing tank 2, the second water washing tank 4, and the final water washing tank 5 of FIG. Method 1 is used for grinding. The composition, temperature, and immersion time of the surface polishing liquid 6 of the surface smoothing tank 1 in the surface smoothing step are shown in Table 1. In the subsequent polishing step, the polishing by the polishing liquid 8 in the subsequent stage of the subsequent grinding tank 3 is carried out at room temperature for about 50 minutes by a polishing liquid containing 10% by weight of hydrofluoric acid and 5% by weight of sulfuric acid. After the grinding, the surface of the sample was observed by microscopic observation of the size of the dent which was grown starting from the artificial scratch, and the number thereof was calculated. Moreover, the surface state of the glass substrate was visually observed. The results are shown in Table 1.

(比較例1~4)(Comparative examples 1 to 4)

以與實施例1~9同樣之做法,惟,表面平滑化步驟中之表面平滑化槽1之表面研磨液6之組成、溫度及浸漬時間係如表1所示般改變而進行加工。結果示於表1。In the same manner as in the first to the ninth embodiments, the composition, temperature, and immersion time of the surface polishing liquid 6 of the surface smoothing tank 1 in the surface smoothing step were changed as shown in Table 1, and processed. The results are shown in Table 1.

(比較例5)(Comparative Example 5)

於實施例1~9及比較例1~4中,未進行由表面平滑化槽1之表面研磨液6所進行之處理表面平滑化步驟,及第1水洗槽2之水洗,只進行後段研磨槽3中之後段研磨液8之處理、與第2及最終水洗槽4、5中之水洗,進行比較。結果示於表1。In Examples 1 to 9 and Comparative Examples 1 to 4, the surface smoothing step by the surface polishing liquid 6 of the surface smoothing tank 1 and the water washing of the first water washing tank 2 were not performed, and only the rear grinding tank was performed. The treatment of the polishing liquid 8 in the latter stage of 3 is compared with the washing in the second and final washing tanks 4, 5. The results are shown in Table 1.

評估方法:表1中之評估方法,係將分別滿足直徑50μm以上之凹痕數較比較例5減少、及無前述段差存在者,判定為抑制效果。Evaluation method: In the evaluation method in Table 1, the number of pits each satisfying a diameter of 50 μm or more was reduced as compared with Comparative Example 5, and the absence of the above-described step was judged to be an inhibitory effect.

由表1之結果可判讀出:首先,凹痕之減少傾向與段差之產生傾向係由硫酸濃度與氫氟酸濃度及於表面研磨液中之浸漬時間的均衡而決定。亦即,由實施例1、2、6、8及9之結果,於硫酸濃度60~85重量%、氫氟酸濃度1.1~3.9重量%之條件下,未確認到徑為150μm以上之凹痕,且凹痕合計數亦減少至比較例5之大約1/2~1/7以下,亦未產生段差。From the results of Table 1, it can be determined that the tendency of the reduction of the dent and the tendency of the step are determined by the balance between the concentration of sulfuric acid and the concentration of hydrofluoric acid and the immersion time in the surface polishing liquid. That is, as a result of Examples 1, 2, 6, 8, and 9, under the conditions of a sulfuric acid concentration of 60 to 85% by weight and a hydrofluoric acid concentration of 1.1 to 3.9 % by weight, dents having a diameter of 150 μm or more were not confirmed. Moreover, the total number of dents was also reduced to about 1/2 to 1/7 of Comparative Example 5, and no step difference was produced.

又,於硫酸為70%、氫氟酸濃度低(0.9重量%)之實施例3中,藉由延長浸漬時間,凹痕數減少至比較例5之1/10,藉由設定為較長的浸漬時間,可提高凹痕抑制效果。Further, in Example 3 in which sulfuric acid was 70% and hydrofluoric acid concentration was low (0.9% by weight), the number of dimples was reduced to 1/10 of Comparative Example 5 by lengthening the immersion time, and was set to be longer. The immersion time can improve the dent suppression effect.

再者,於氫氟酸濃度低(0.5重量%)之實施例4,與硫酸濃度低(50重量%)之實施例5,及實施例7中,則無徑為150μm以上之凹痕,合計數可降低至比較例5之4/5之程度。Further, in Example 4 in which the hydrofluoric acid concentration was low (0.5% by weight), and in Example 5 in which the sulfuric acid concentration was low (50% by weight), and in Example 7, the dents having a diameter of 150 μm or more were not included. The number can be reduced to the extent of 4/5 of Comparative Example 5.

另一方面,硫酸濃度超過90重量%之比較例3,氫氟酸濃度超過4重量%之比較例1、2,以及硫酸濃度低至30重量%、氫氟酸濃度高達5.5重量%之比較例4中,任一者雖皆確認到有凹痕產生之抑制效果,卻容易產生段差,故不佳。On the other hand, Comparative Example 3 in which the sulfuric acid concentration exceeded 90% by weight, Comparative Examples 1 and 2 in which the hydrofluoric acid concentration exceeded 4% by weight, and Comparative Example in which the sulfuric acid concentration was as low as 30% by weight and the hydrofluoric acid concentration was as high as 5.5% by weight. In any of the four, it is confirmed that there is a suppression effect of the dent, but it is easy to cause a step difference, which is not preferable.

由上述結果可知:為了不產生段差並抑制凹痕之產生,必須於硫酸40~90重量%(以50~85重量%為佳)及氫氟酸0.4~4重量%(以0.5~4重量%為佳)的濃度範圍內進行研磨。From the above results, it is known that 40 to 90% by weight of sulfuric acid (preferably 50 to 85% by weight) and 0.4 to 4% by weight of hydrofluoric acid (0.5 to 4% by weight) are required in order to prevent the generation of the step and suppress the generation of the indentation. Grinding is carried out within a concentration range of better.

(實施例10)<實基板之試驗結果>(Example 10) <Test results of real substrate>

使用鋁硼矽酸玻璃基板(第4代尺寸)進行試驗。表面研磨液6使用硫酸70重量%、氫氟酸1.3重量%之水溶液,藉由將玻璃基板浸漬於表面研磨液中,進行玻璃表面之研磨。此時,表面研磨液之溫度設定為15℃,玻璃基板浸漬於研磨液中之時間為約15分,以吹氣方式攪拌表面研磨液。於表面研磨完成後,對玻璃基板進行水洗。然後,藉由含有氫氟酸10重量%及硫酸5重量%之表面研磨液,加工至所需的基板厚度。其結果,於實用評估基準中之不合格率減少至1/3。The test was carried out using an aluminoborosilicate glass substrate (4th generation size). The surface polishing liquid 6 was an aqueous solution of 70% by weight of sulfuric acid and 1.3% by weight of hydrofluoric acid, and the glass substrate was immersed in a surface polishing liquid to polish the surface of the glass. At this time, the temperature of the surface polishing liquid was set to 15 ° C, and the time during which the glass substrate was immersed in the polishing liquid was about 15 minutes, and the surface polishing liquid was agitated by blowing. After the surface polishing is completed, the glass substrate is washed with water. Then, it is processed to a desired substrate thickness by a surface polishing liquid containing 10% by weight of hydrofluoric acid and 5% by weight of sulfuric acid. As a result, the failure rate in the practical evaluation benchmark was reduced to 1/3.

(實施例11)<實基板之試驗結果>(Example 11) <Test results of real substrate>

使用鋁硼矽酸玻璃基板(第4代尺寸)進行試驗。表面研磨液6使用硫酸60重量%、氫氟酸1.4重量%之水溶液,藉由將玻璃基板浸漬於表面研磨液中,進行玻璃表面之研磨。此時,表面研磨液之溫度設定為15℃,玻璃基板浸漬於研磨液中之時間為約70分,以吹氣方式攪拌表面研磨液。於表面研磨完成後,對玻璃基板進行水洗。然後,藉由含有氫氟酸10重量%及硫酸5重量%之表面研磨液,加工至所需的基板厚度。其結果,於實用評估基準中之不合格率減少至1/20。The test was carried out using an aluminoborosilicate glass substrate (4th generation size). The surface polishing liquid 6 used an aqueous solution of 60% by weight of sulfuric acid and 1.4% by weight of hydrofluoric acid, and the glass substrate was immersed in a surface polishing liquid to polish the surface of the glass. At this time, the temperature of the surface polishing liquid was set to 15 ° C, and the time during which the glass substrate was immersed in the polishing liquid was about 70 minutes, and the surface polishing liquid was agitated by blowing. After the surface polishing is completed, the glass substrate is washed with water. Then, it is processed to a desired substrate thickness by a surface polishing liquid containing 10% by weight of hydrofluoric acid and 5% by weight of sulfuric acid. As a result, the failure rate in the practical evaluation standard was reduced to 1/20.

(產業上之可利用性)(industrial availability)

本發明之製造方法可利用於作為藉含氫氟酸之化學研磨液浸漬玻璃基板,進行表面研磨至所需玻璃基板厚度之研磨玻璃基板,尤其是液晶顯示器用玻璃基板之製造方 法。The manufacturing method of the present invention can be utilized as a method of manufacturing a glass substrate for liquid crystal display by impregnating a glass substrate with a chemical polishing liquid containing hydrofluoric acid and performing surface polishing to a desired glass substrate thickness. law.

1‧‧‧表面平滑化槽1‧‧‧Surface smoothing tank

2‧‧‧第1水洗槽2‧‧‧1st washing tank

3‧‧‧後段研磨槽3‧‧‧ Rear grinding groove

4‧‧‧第2水洗槽4‧‧‧2nd washing tank

5‧‧‧最終水洗槽5‧‧‧Final washing tank

6‧‧‧表面研磨液6‧‧‧ Surface grinding fluid

7‧‧‧洗淨水7‧‧‧ Washing water

8‧‧‧後段研磨液8‧‧‧After the slurry

9‧‧‧洗淨水9‧‧‧ Washing water

10‧‧‧洗淨水10‧‧‧ Washing water

11‧‧‧送氣裝置11‧‧‧Air supply device

12‧‧‧送氣裝置12‧‧‧Air supply device

13‧‧‧送氣裝置13‧‧‧Air supply device

14‧‧‧送氣裝置14‧‧‧Air supply device

15‧‧‧送氣裝置15‧‧‧Air supply device

20‧‧‧玻璃基板20‧‧‧ glass substrate

21‧‧‧小型之基板收納卡座21‧‧‧Small substrate storage deck

圖1為顯示液晶顯示器用玻璃基板之製造方法的實施形態之流程圖。1 is a flow chart showing an embodiment of a method of manufacturing a glass substrate for a liquid crystal display.

1‧‧‧表面平滑化槽1‧‧‧Surface smoothing tank

2‧‧‧第1水洗槽2‧‧‧1st washing tank

3‧‧‧後段研磨槽3‧‧‧ Rear grinding groove

4‧‧‧第2水洗槽4‧‧‧2nd washing tank

5‧‧‧最終水洗槽5‧‧‧Final washing tank

6‧‧‧表面研磨液6‧‧‧ Surface grinding fluid

7‧‧‧洗淨水7‧‧‧ Washing water

8‧‧‧後段研磨液8‧‧‧After the slurry

9‧‧‧洗淨水9‧‧‧ Washing water

10‧‧‧洗淨水10‧‧‧ Washing water

11‧‧‧送氣裝置11‧‧‧Air supply device

12‧‧‧送氣裝置12‧‧‧Air supply device

13‧‧‧送氣裝置13‧‧‧Air supply device

14‧‧‧送氣裝置14‧‧‧Air supply device

15‧‧‧送氣裝置15‧‧‧Air supply device

20‧‧‧玻璃基板20‧‧‧ glass substrate

21‧‧‧小型之基板收納卡座21‧‧‧Small substrate storage deck

Claims (5)

一種平面顯示器用研磨玻璃基板之製造方法,係將玻璃基板浸漬於含有氫氟酸之研磨液中,對表面進行化學研磨以製造平面顯示器用研磨玻璃基板者;其中包含:表面平滑化步驟,係將表面上存在有微裂(microcrack)之玻璃基板浸漬於含有40~90重量%硫酸及0.4~4重量%氫氟酸之表面研磨液中並進行表面研磨,藉此抑制凹痕之成長及段差之發生,消除微裂而形成平滑的玻璃表面;以及後段研磨步驟,係將經表面平滑化之玻璃基板浸漬於含有5~30重量%氫氟酸之後段研磨液,在具有平滑的玻璃表面之狀態下,後段研磨至所需的基板厚度,藉此,在不於玻璃表面產生凹痕及段差之情況下,製造具有平滑玻璃表面之玻璃基板。 A method for producing a polished glass substrate for a flat panel display, wherein the glass substrate is immersed in a polishing liquid containing hydrofluoric acid, and the surface is chemically polished to produce a ground glass substrate for a flat display; wherein the surface smoothing step is included The glass substrate having microcracks on the surface is immersed in a surface polishing liquid containing 40 to 90% by weight of sulfuric acid and 0.4 to 4% by weight of hydrofluoric acid and subjected to surface grinding, thereby suppressing the growth and step of the dents. Occurs to eliminate microcracking to form a smooth glass surface; and a post-grinding step of immersing the surface-smoothed glass substrate in a slurry containing 5-30% by weight of hydrofluoric acid, having a smooth glass surface In the state, the rear stage is ground to a desired substrate thickness, whereby a glass substrate having a smooth glass surface is produced without causing dents and step on the glass surface. 如申請專利範圍第1項之製造方法,其中,表面研磨後,將附著於玻璃表面之表面研磨液洗淨除去,並進行後段研磨。 The manufacturing method of claim 1, wherein after the surface is polished, the surface polishing liquid adhering to the surface of the glass is washed and removed, and is subjected to post-stage polishing. 如申請專利範圍第1或2項之製造方法,其中,表面研磨液為含有50~85重量%的硫酸及0.5~4重量%的氫氟酸之研磨液。 The manufacturing method of claim 1 or 2, wherein the surface polishing liquid is a polishing liquid containing 50 to 85% by weight of sulfuric acid and 0.5 to 4% by weight of hydrofluoric acid. 如申請專利範圍第1或2項之製造方法,其中,後段研磨液為含有10~30重量%的氫氟酸之研磨液。 The manufacturing method of claim 1 or 2, wherein the latter stage polishing liquid is a polishing liquid containing 10 to 30% by weight of hydrofluoric acid. 如申請專利範圍第1或2項之製造方法,其中,玻璃基板為液晶顯示器用玻璃基板。 The manufacturing method of claim 1 or 2, wherein the glass substrate is a glass substrate for a liquid crystal display.
TW096114959A 2006-04-28 2007-04-27 Process for producing polished glass substrate,polished glass substrate and surface-polishing liquor TWI383963B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006124970A JP4324742B2 (en) 2006-04-28 2006-04-28 Manufacturing method of polished glass substrate

Publications (2)

Publication Number Publication Date
TW200804211A TW200804211A (en) 2008-01-16
TWI383963B true TWI383963B (en) 2013-02-01

Family

ID=38767062

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114959A TWI383963B (en) 2006-04-28 2007-04-27 Process for producing polished glass substrate,polished glass substrate and surface-polishing liquor

Country Status (4)

Country Link
JP (1) JP4324742B2 (en)
KR (1) KR100979691B1 (en)
CN (1) CN101062838B (en)
TW (1) TWI383963B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5463740B2 (en) * 2009-06-05 2014-04-09 東ソー株式会社 Cleaning method for polished quartz glass substrate
JP5677903B2 (en) * 2011-07-01 2015-02-25 ステラケミファ株式会社 Surface treatment solution for antiglare surface of glass substrate
US9315412B2 (en) 2011-07-07 2016-04-19 Corning Incorporated Surface flaw modification for strengthening of glass articles
CN106892553A (en) 2011-11-10 2017-06-27 康宁股份有限公司 The peracid strengthening of glass
CN102513940A (en) * 2012-01-04 2012-06-27 周晓辉 Method for producing glass with low reflectance and high transparency for screen panel
JP5518133B2 (en) * 2012-06-14 2014-06-11 株式会社Nsc Chemical polishing equipment
CN103241957B (en) * 2013-05-28 2016-04-20 湖北优尼科光电技术股份有限公司 A kind of thinning glass substrate engraving method
CN103241958B (en) * 2013-05-28 2016-05-04 湖北优尼科光电技术股份有限公司 A kind of engraving method of LCD glass substrate
KR101489241B1 (en) * 2013-10-01 2015-02-04 주식회사 이코니 Slim etching method for a glass substrate comprising the pre-treatment process
US9488857B2 (en) 2014-01-10 2016-11-08 Corning Incorporated Method of strengthening an edge of a glass substrate
CN105293934B (en) * 2014-07-11 2019-11-29 东京应化工业株式会社 Glass processing method, glass etching liquid and glass substrate
CN104891496A (en) * 2015-05-11 2015-09-09 常州市奥普泰科光电有限公司 Method for non-destructive cutting of large optical glass to small ones
CN109111859A (en) * 2018-10-30 2019-01-01 秦皇岛市大龙建材有限公司 Glass polishing solution

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4332649A (en) * 1979-12-07 1982-06-01 Saelzle Erich Method of polishing glass ware with sulfuric acid and hydrofluoric acid
CN1662464A (en) * 2002-06-24 2005-08-31 埃里希·扎尔茨勒 Method for reducing and controlling hexafluorosilicate concentration during the polishing of glass objects in a polishing bath containing sulphuric acid and hydrofluoric acid
JP2005350350A (en) * 2005-08-04 2005-12-22 Nishiyama Stainless Chem Kk Method for polishing surface of glass plate, glass substrate for flat panel display, and flat panel display

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721103B2 (en) * 1992-11-24 1998-03-04 ホーヤ株式会社 Glassware decorating material and decorating method
JP2001089191A (en) * 1999-09-27 2001-04-03 Nippon Sheet Glass Co Ltd Production process for display glass substrate and display glass substrate produced by the same
JP3575349B2 (en) 1999-09-27 2004-10-13 日立プラント建設株式会社 Cleaning solution and cleaning method for aluminosilicate glass substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4332649A (en) * 1979-12-07 1982-06-01 Saelzle Erich Method of polishing glass ware with sulfuric acid and hydrofluoric acid
CN1662464A (en) * 2002-06-24 2005-08-31 埃里希·扎尔茨勒 Method for reducing and controlling hexafluorosilicate concentration during the polishing of glass objects in a polishing bath containing sulphuric acid and hydrofluoric acid
JP2005350350A (en) * 2005-08-04 2005-12-22 Nishiyama Stainless Chem Kk Method for polishing surface of glass plate, glass substrate for flat panel display, and flat panel display

Also Published As

Publication number Publication date
KR20070106404A (en) 2007-11-01
TW200804211A (en) 2008-01-16
KR100979691B1 (en) 2010-09-02
CN101062838B (en) 2012-05-16
JP4324742B2 (en) 2009-09-02
CN101062838A (en) 2007-10-31
JP2007297228A (en) 2007-11-15

Similar Documents

Publication Publication Date Title
TWI383963B (en) Process for producing polished glass substrate,polished glass substrate and surface-polishing liquor
EP2260507B1 (en) Methods for etching the edge of a silicon wafer, silicon wafer, etching apparatus
CN104561876B (en) A kind of hot dip galvanizing process method
JP4532521B2 (en) Manufacturing method of polished semiconductor wafer
CN105092437A (en) Ultra-supercritical martensite heat resisting cast steel original austenite grain size display method
CN101234853B (en) Attenuation method and device for flat glass substrate
CN111816548A (en) Process for improving edge roughness of large-diameter semiconductor silicon wafer by edge polishing
CN111251163A (en) Processing method for polished silicon wafer with hydrophilic surface
TW201347918A (en) Method for polishing glass substrate
CN106365459A (en) Chemically thinning method for liquid crystal glass substrate
US20220153633A1 (en) Production Method for Sheets of Glass with a Diffuse Finish, and Resulting Sheet of Glass
CN111095491A (en) Double-side polishing method for silicon wafer
JP3523239B2 (en) Glass substrate chemical processing method and glass substrate
TW201544577A (en) Composition and method for healing glass, and glass treated with the composition
CN105699137A (en) Displaying method for structure of metal chromium
JP2008296351A (en) Substrate treatment apparatus and method
TW201742138A (en) Set of compositions for polishing, pre-polishing composition, and method of polishing silicon wafer
JP3995146B2 (en) Manufacturing method of glass substrate for liquid crystal display
CN106170848A (en) The sapphire using high temperature wet to carry out is thinning and smooths
JP3995147B2 (en) Method for manufacturing glass substrate for plasma display panel
JP6248857B2 (en) Evaluation method of polishing cloth
JP5449381B2 (en) CdTe semiconductor substrate for epitaxial growth, substrate storage method and epitaxial growth method
TW200951089A (en) Device of optical glass etching and method thereof
CN116375351A (en) Etched AG microcrystalline glass and preparation method thereof
CN115602531A (en) Polishing method of semiconductor material wafer