JP2007287939A5 - - Google Patents
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- Publication number
- JP2007287939A5 JP2007287939A5 JP2006113813A JP2006113813A JP2007287939A5 JP 2007287939 A5 JP2007287939 A5 JP 2007287939A5 JP 2006113813 A JP2006113813 A JP 2006113813A JP 2006113813 A JP2006113813 A JP 2006113813A JP 2007287939 A5 JP2007287939 A5 JP 2007287939A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- gas
- polished
- gas suction
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005498 polishing Methods 0.000 claims description 269
- 238000001514 detection method Methods 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 34
- 239000002002 slurry Substances 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000012544 monitoring process Methods 0.000 claims description 6
- 230000008034 disappearance Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 225
- 239000000758 substrate Substances 0.000 description 58
- 239000010408 film Substances 0.000 description 46
- 238000004140 cleaning Methods 0.000 description 25
- 230000035945 sensitivity Effects 0.000 description 23
- 238000012546 transfer Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 7
- 239000011630 iodine Substances 0.000 description 7
- 229910052740 iodine Inorganic materials 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000003595 mist Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002341 toxic gas Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000007726 management method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 ammonium ions Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006113813A JP2007287939A (ja) | 2006-04-17 | 2006-04-17 | 研磨方法、及び研磨装置 |
| US11/785,190 US20070243797A1 (en) | 2006-04-17 | 2007-04-16 | Polishing method and polishing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006113813A JP2007287939A (ja) | 2006-04-17 | 2006-04-17 | 研磨方法、及び研磨装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007287939A JP2007287939A (ja) | 2007-11-01 |
| JP2007287939A5 true JP2007287939A5 (fr) | 2009-03-19 |
Family
ID=38605383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006113813A Withdrawn JP2007287939A (ja) | 2006-04-17 | 2006-04-17 | 研磨方法、及び研磨装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20070243797A1 (fr) |
| JP (1) | JP2007287939A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI422798B (zh) * | 2006-10-06 | 2014-01-11 | Ebara Corp | 加工終點檢測方法、研磨方法及研磨裝置 |
| CN105643464B (zh) * | 2015-12-25 | 2019-06-07 | 深圳市沃特沃德股份有限公司 | 一种移动终端壳体的加工方法及壳体模具 |
| CN117817135B (zh) * | 2024-03-05 | 2024-05-31 | 鑫业诚智能装备(无锡)有限公司 | 一种激光自动标刻装置及标刻方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6096267A (en) * | 1997-02-28 | 2000-08-01 | Extraction Systems, Inc. | System for detecting base contaminants in air |
| US6077350A (en) * | 1998-03-10 | 2000-06-20 | Sony Corporation | System and method for curing polymeric/photoresist coatings |
| US6066564A (en) * | 1998-05-06 | 2000-05-23 | International Business Machines Corporation | Indirect endpoint detection by chemical reaction |
| US6180422B1 (en) * | 1998-05-06 | 2001-01-30 | International Business Machines Corporation | Endpoint detection by chemical reaction |
| US6021679A (en) * | 1998-08-04 | 2000-02-08 | International Business Machines Corporation | Probe for slurry gas sampling |
| US6254453B1 (en) * | 1999-09-30 | 2001-07-03 | International Business Machines Corporation | Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system |
| US6291351B1 (en) * | 2000-06-28 | 2001-09-18 | International Business Machines Corporation | Endpoint detection in chemical-mechanical polishing of cloisonne structures |
| JP2003338499A (ja) * | 2002-05-20 | 2003-11-28 | Tokyo Electron Ltd | 膜形成方法及び膜形成装置 |
| US6899784B1 (en) * | 2002-06-27 | 2005-05-31 | International Business Machines Corporation | Apparatus for detecting CMP endpoint in acidic slurries |
| US6878629B1 (en) * | 2002-06-27 | 2005-04-12 | International Business Machines Corporation | Method for detecting CMP endpoint in acidic slurries |
| US7189146B2 (en) * | 2003-03-27 | 2007-03-13 | Asm Nutool, Inc. | Method for reduction of defects in wet processed layers |
| KR100583105B1 (ko) * | 2003-12-24 | 2006-05-23 | 주식회사 하이닉스반도체 | 반도체 소자의 화학적 기계적 연마 공정의 종말점 검출 방법 |
-
2006
- 2006-04-17 JP JP2006113813A patent/JP2007287939A/ja not_active Withdrawn
-
2007
- 2007-04-16 US US11/785,190 patent/US20070243797A1/en not_active Abandoned
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