JP2007273968A5

JP2007273968A5 -

Info

Publication number: JP2007273968A5
Application number: JP2007055812A
Authority: JP
Filing date: 2007-03-06
Publication date: 2010-04-08
Anticipated expiration: 2027-03-06

Claims

An island-shaped semiconductor film formed on the substrate;
Wherein the semiconductor film and a conductive film functioning as a gate electrode formed across the front Symbol semi conductor film via a gate insulating film,
The semiconductor film is
A channel formation region provided in a region overlapping with the conductive film with the gate insulating film interposed therebetween;
A first impurity region for forming a source region or a drain region provided adjacent to the channel formation region;
A second impurity region provided adjacent to the channel formation region and the first impurity region;
The first impurity region and the second impurity region have different conductivity types,
The semiconductor device, wherein the second impurity region and the channel formation region have different conductivity types.

An island-shaped semiconductor film formed on the substrate;
Wherein the semiconductor film and a conductive film functioning as a gate electrode formed across the front Symbol semi conductor film via a gate insulating film,
The semiconductor film is
A channel formation region provided in a region overlapping with the conductive film with the gate insulating film interposed therebetween;
A first impurity region for forming a source region or a drain region provided adjacent to the channel formation region;
A second impurity region provided adjacent to the channel formation region and the first impurity region;
The first impurity region and the second impurity region have different conductivity types,
The semiconductor device, wherein the second impurity region and the channel formation region have the same conductivity type and different concentrations.

In claim 1 or claim 2,
The semiconductor device, wherein the second impurity region is provided at an end portion of the semiconductor film and in the vicinity of a region where the conductive film overlaps.

A first semiconductor film and a second semiconductor film formed in an island shape on a substrate;
A conductive film functioning as a gate electrode formed on the first semiconductor film and the second semiconductor film through a gate insulating film;
The first semiconductor film includes:
A first channel formation region provided in a region overlapping with the conductive film with the gate insulating film interposed therebetween;
A first impurity region for forming a source region or a drain region provided adjacent to the first channel formation region;
A second impurity region provided adjacent to the first channel formation region and the first impurity region;
Said second half-conductor film,
A second channel formation region provided in a region overlapping with the conductive film with the gate insulating film interposed therebetween;
A third impurity region forming a source region or a drain region;
A fourth impurity region provided adjacently between the channel formation region and the third impurity region;
The first impurity region has a conductivity type different from that of the second impurity region, the third impurity region, and the fourth impurity region,
The semiconductor device, wherein the second impurity region and the fourth impurity region have impurity elements having substantially the same concentration.

In claim 4,
A semiconductor device, wherein the first channel formation region and the second impurity region have different conductivity types.

In claim 4 or claim 5,
The semiconductor device, wherein the second impurity region is provided adjacent to a region which is an end portion of the first semiconductor film and overlaps with the conductive film.

A first semiconductor film and a second semiconductor film formed in an island shape on a substrate;
A conductive film functioning as a gate electrode formed on the first semiconductor film and the second semiconductor film across the first semiconductor film and the second semiconductor film via a gate insulating film; And
The first semiconductor film includes:
A first channel formation region provided in a region overlapping with the conductive film with the gate insulating film interposed therebetween;
A first impurity region forming a source region or a drain region;
A second impurity region forming an LDD region provided adjacently between the first channel formation region and the first impurity region;
A third impurity region provided adjacent to the first channel formation region, the first impurity region, and the second impurity region;
Said second half-conductor film,
A second channel formation region provided in a region overlapping with the conductive film with the gate insulating film interposed therebetween;
A fourth impurity region forming a source region or a drain region;
A fifth impurity region forming an LDD region provided adjacently between the second channel formation region and the fourth impurity region;
A sixth impurity region provided adjacent to the second channel formation region, the fourth impurity region, and the fifth impurity region;
The first impurity region, the second impurity region, and the sixth impurity region have the same conductivity type,
The third impurity region, the fourth impurity region, and the fifth impurity region have the same conductivity type,
The semiconductor device, wherein the third impurity region and the fifth impurity region have impurity elements having substantially the same concentration.

In claim 7,
The semiconductor device, wherein the second impurity region and the sixth impurity region have impurity elements having substantially the same concentration.

In claim 7 or claim 8,
The third impurity region is provided adjacent to a region that is an end portion of the first semiconductor film and overlaps the conductive film,
The sixth impurity region is provided at an end portion of the second semiconductor film and adjacent to a region where the conductive film overlaps.

An island-shaped semiconductor film is formed on the substrate,
Forming a conductive film functioning as a gate electrode through a gate insulating film so as to cross the semiconductor film;
A first impurity element is introduced into the semiconductor film using the conductive film as a mask;
Selectively forming a resist on an end of the semiconductor film;
By introducing a second impurity element having a conductivity type different from that of the first impurity element into the semiconductor film using the resist and the conductive film as a mask, a channel formation region is formed in a region overlapping with the conductive film in the semiconductor film. Forming a first impurity region having the same conductivity type as that of the second impurity element so as to be adjacent to the channel formation region, so as to be adjacent to the channel formation region and the first impurity region. And forming a second impurity region having the same conductivity type as that of the first impurity element.

In claim 10,
The method for manufacturing a semiconductor device, wherein the second impurity region is formed adjacent to a region which is an end portion of the semiconductor film and overlaps with the conductive film.

Forming a first semiconductor film and a second semiconductor film on the substrate in an island shape;
Forming a conductive film functioning as a gate electrode through a gate insulating film so as to cross the first semiconductor film and the second semiconductor film;
A first impurity element is introduced into the first semiconductor film and the second semiconductor film using the conductive film as a mask;
Forming a first resist so as to cover an end of the first semiconductor film and the second semiconductor film;
By introducing a second impurity element having a conductivity type different from that of the first impurity element into the first semiconductor film using the first resist and the conductive film as a mask, Forming a first channel formation region in a region overlapping with the conductive film, and forming a first impurity region having the same conductivity type as the second impurity element so as to be adjacent to the first channel formation region; Forming a second impurity region having the same conductivity type as the first impurity element so as to be adjacent to the first channel formation region and the first impurity region;
Forming an insulating film in contact with the side surface of the conductive film;
Forming a second resist so as to cover the first semiconductor film;
By introducing a third impurity element having a conductivity type different from that of the second impurity element into the second semiconductor film using the conductive film and the insulating film as a mask, the conductivity of the second semiconductor film is increased. Forming a second channel formation region in a region overlapping with the film; and a fourth impurity having the same conductivity type as the first impurity element in a region adjacent to the second channel formation region and overlapping the insulating film A method for manufacturing a semiconductor device is characterized in that a region is formed, and a third impurity region having the same conductivity type as the third impurity element is formed adjacent to the fourth impurity region.

In claim 12,
A method for manufacturing a semiconductor device, wherein the second impurity region and the fourth impurity region are formed so as to contain impurity elements having substantially the same concentration.

In claim 12 or claim 13,
The method for manufacturing a semiconductor device, wherein the second impurity region is formed adjacent to a region which is an end portion of the first semiconductor film and overlaps with the conductive film.