JP2007273409A - Image display device and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device having a drawing wiring with an excellent reliability, and to provide a method of manufacturing the same. <P>SOLUTION: The image display device 10 is provided with an organic EL panel 20, an anode drawing wiring 31, an anode protection layer 32, an anode resin film 33, an anode IC 34, an anode TCP 35, a cathode drawing wiring 36, a cathode protection layer 37, a cathode resin film, a cathode IC 39, and a cathode TCP 40. Since the anode protection layer 32 and the cathode protection layer 37 are respectively formed, and furthermore the anode resin layer 33 and the cathode resin layer 38 are formed, on the anode drawing wiring 31 formed between the organic EL panel 20 and the anode TCP 35 and on the cathode drawing wiring 36 formed between the organic EL panel 20 and the cathode TCP 40, the anode drawing wiring 31 and the cathode drawing wiring 36 are protected from the external environment, thereby corrosion can be suppressed excellently. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an image display device and a manufacturing method thereof, and more particularly to an organic EL (electroluminescence) display device and a manufacturing method thereof.

  2. Description of the Related Art Conventionally, an organic EL (electroluminescence) display device includes an insulating substrate, at least one anode formed on the substrate, an organic layer (EL layer), and a cathode. Further, when such an organic EL display device is connected to an external driving device for causing a light emission function, it is necessary to connect the cathode and the anode to the external driving device. Therefore, the lead-out wiring is led out to the outer peripheral region of the substrate, and the lead-out wiring is connected to the external drive device in the outer peripheral region of the substrate.

  In general, the external drive device has a chip-on-glass structure in which an IC (Integrated Circuit) is directly arranged on an insulating substrate, an FPC (Flexible Printed Circuit Board), and a TCP (Tape Carrier Package), and the FPC and TPC. A structure for connecting to the lead wiring is adopted.

In addition, since the organic EL element is vulnerable to moisture, a technique for bonding a sealing plate, a sealing can, and an insulating substrate with an adhesive to block the region where the organic layer is formed from the outside (for example, Patent Document 1). And a technology of protecting with a thin film such as SiON having high moisture resistance and a moisture-proof resin such as a fluororesin.
JP 2002-216948 A

  By the way, since one end of the lead-out wiring for drawing out the anode and the cathode to the peripheral region of the substrate is connected to the driving device, there is a region exposed outside without being sealed by the sealing plate. Therefore, there is a problem that the lead wire reacts with moisture and corrodes depending on the material used for the lead wire and the use environment.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an image display device including a lead-out wiring having good reliability, which suppresses corrosion caused by an external environment such as moisture, and a manufacturing method thereof. .

In order to achieve the above-described object, an image display device according to the first aspect of the present invention includes:
An insulating substrate;
A first electrode formed on the substrate;
An organic layer formed on the first electrode;
A second electrode formed on the organic layer;
A first lead wiring that leads the first electrode to a peripheral region of the substrate;
A second lead-out wiring that leads the second electrode to a peripheral region of the substrate;
Sealing means for sealing the first electrode, the organic layer, and the second electrode;
A protective layer formed on the first lead wiring and / or the second lead wiring and on a part of the outside of the sealing means;
An insulating layer formed of an insulating material so as to cover at least an end of the first electrode;
The protective layer is formed of the same material as the insulating layer.

  As described above, since the protective layer is formed on the first lead wiring and / or the second lead wiring in a portion formed outside the sealing means, moisture does not touch the lead wiring, and the lead wiring is It can be prevented from being corroded by moisture. Furthermore, by forming the protective layer from an insulating layer formed so as to cover at least the end of the first electrode, the protective layer can be formed at an accurate position, and the manufacturing process is not increased.

In order to achieve the above-described object, an image display device according to a second aspect of the present invention includes:
An insulating substrate;
A first electrode formed on the substrate;
An organic layer formed on the first electrode;
A second electrode formed on the organic layer;
A first lead wiring that leads the first electrode to a peripheral region of the substrate;
A second lead-out wiring that leads the second electrode to a peripheral region of the substrate;
Sealing means for sealing the first electrode, the organic layer, and the second electrode;
A protective layer formed on the first lead wiring and / or the second lead wiring and on a part of the outside of the sealing means;
A separation layer formed of an insulating material between the second electrodes;
The protective layer is formed of the same material as the separation layer.

  As described above, since the protective layer is formed on the first lead wiring and / or the second lead wiring in a portion formed outside the sealing means, moisture does not touch the lead wiring, and the lead wiring is It can be prevented from being corroded by moisture. Furthermore, by forming the protective layer from the same material as the separation layer formed between the second electrodes in this way, the protective layer can be formed at an accurate position, and the manufacturing process is not increased.

In order to achieve the above-described object, an image display device according to a third aspect of the present invention includes:
An insulating substrate;
A first electrode formed on the substrate;
An organic layer formed on the first electrode;
A second electrode formed on the organic layer;
A first lead wiring that leads the first electrode to a peripheral region of the substrate;
A second lead-out wiring that leads the second electrode to a peripheral region of the substrate;
Sealing means for sealing the first electrode, the organic layer, and the second electrode;
A protective layer formed on the first lead wire and / or the second lead wire and on a part of the outside of the sealing means;
The image display device, wherein the protective layer is formed of a photosensitive resist.

  As described above, since the protective layer is formed on the first lead wiring and / or the second lead wiring in a portion formed outside the sealing means, moisture does not touch the lead wiring, and the lead wiring is It can be prevented from being corroded by moisture. Furthermore, by forming the protective layer from a photosensitive resist, the protective layer can be formed without increasing the number of manufacturing steps, and the protective layer can be formed with higher positional accuracy.

A resin may be applied on the protective layer.
Thus, by applying the resin on the protective layer, corrosion of the lead-out wiring exposed from the sealing means can be prevented better.

In order to achieve the above-described object, a method for manufacturing an image display device according to the fourth aspect of the present invention includes:
A first electrode forming step of forming a first electrode on a substrate;
An insulating layer forming step of forming an insulating layer on the first electrode;
A first lead wiring forming step of forming a first lead wiring for leading the first electrode to a peripheral region of the substrate;
An organic layer forming step of forming an organic layer on the first electrode;
A second electrode forming step of forming a second electrode on the organic layer;
A separation layer forming step of forming a separation layer for separating the second electrode;
A second lead wiring forming step of forming a second lead wiring for leading the second electrode to the peripheral region of the substrate;
A sealing means forming step for forming a sealing means for sealing the first electrode, the organic layer, and the second electrode,
In any one of the insulating layer forming step and the separation layer forming step, a protective layer is formed on the first lead wiring and / or the second lead wiring and at a part outside the sealing means. It is characterized by that.
In this way, by forming the protective layer on the first lead wiring and / or the second lead wiring and part of the outside of the sealing means in either the insulating layer forming step or the separation layer forming step. Thus, it is possible to form a protective layer without increasing the number of steps.

  ADVANTAGE OF THE INVENTION According to this invention, an image display apparatus provided with the extraction wiring which suppresses corrosion of an extraction wiring by forming a protective layer on an extraction wiring, and has favorable reliability, and its manufacturing method can be provided.

  An image display device and a manufacturing method thereof according to an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, a passive organic EL (electroluminescence) display will be described as an example.

  An image display device 10 according to an embodiment of the present invention is shown in FIGS. FIG. 1 is a plan view, and FIG. 2 is a cross-sectional view showing a part of an organic EL panel 20 constituting the image display device 10. 3A to 3C particularly illustrate a region between the organic EL panel 20 and the anode TCP 35, and FIGS. 4A to 4C illustrate the organic EL panel 20 and the cathode. The area between the TCP 40 for use is particularly illustrated.

  As shown in the figure, the image display device 10 includes an organic EL panel 20, an anode lead-out wiring 31, an anode protective layer 32, an anode resin film 33, an anode IC (Integrated Circuit) 34, an anode TCP 35, and a cathode lead-out wiring 36. The cathode protective layer 37, the cathode resin film 38, the cathode IC 39, and the cathode TCP 40 are provided.

  As shown in FIG. 2, the organic EL panel 20 includes a substrate 21, an anode 22, an organic layer 24, and a cathode 25. In the present embodiment, a configuration in which emitted light of the organic layer 24 is extracted from the substrate 21 side will be described as an example.

  The substrate 21 is formed of a transparent or translucent material such as glass, quartz, or resin so that the emitted light from the organic layer 24 can be extracted. As shown in FIG. 1, the anode 22, anode lead-out wiring 31, anode TCP 35, and the like are formed on the substrate 21.

The anode 22 is formed of a conductive material and has a structure in which light is extracted from the substrate 21 side in the present embodiment. Therefore, a material having translucency, for example, tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO). It is preferable to use a material such as SnO ₂ or polypyrrole doped with a dopant, and it is particularly preferable to use ITO. The anodes 22 are formed in a linear shape (long bar shape), and a plurality of anodes 22 are arranged on the substrate 21 so as to be parallel to each other. An insulating layer (not shown) having an opening is formed on the upper surface of the anode 22. In the case of a color panel, R (Red), G (Green), and B (Blue) filters (not shown) are formed below the anode (on the substrate 21 side). In some cases, a polarizing film (not shown) is formed. An auxiliary wiring can also be formed in order to reduce the resistance of the wiring of the anode 22.

  The insulating layer (not shown) is formed of an insulating material, for example, a photosensitive resist, is formed so as to surround the anode 22, and covers the end of the anode 22. The insulating layer includes an opening corresponding to a region where the anode 22 is formed. In addition, when the insulating layer is formed by a photolithography process, there is a problem that the manufacturing cost increases when polyimide is used. Therefore, the insulating layer is preferably formed using a resist, and a photosensitive resist is applied, exposed, and developed. It is formed by doing. As will be described in detail later, the anode protective layer 32 and the cathode protective layer 37 can also be formed using a photosensitive resist for forming this insulating layer. The insulating layer can be provided with an opening corresponding to the region where the anode lead wiring is formed. In this case, the anode lead wiring 31 can be formed when the cathode 25 is formed, and the organic layer 24 is further formed. Then, if it is before the sealing step, the anode lead-out wiring 31 can be formed in any step, which is preferable.

The organic layer 24 is formed on the anode 22 and has at least a hole and electron injection function, an additional transport function thereof, and a function as a light emitting layer for generating excitons by recombination of holes and electrons. The organic layer 24 contains at least a fluorescent substance or a phosphorescent substance which is a compound having a light emitting function. As the fluorescent substance, for example, a metal complex dye such as tris (8-quinolinolato) aluminum (Alq ₃ ) can be used. In addition to this, or in place of this, quinacridone, coumarin, rubrene, styryl dyes, tetraphenylbutadiene, anthracene, perylene, coronene, 12-phthaloperinone derivatives and the like can also be used.

The organic layer 24 may include an electron injecting and transporting layer and a hole injecting and transporting layer. The hole injecting and transporting layer has a function of facilitating the injection of holes from the hole injecting electrode, a function of stably transporting holes, and a function of additionally hindering the transport of electrons. Has the function of facilitating the injection of electrons, the function of stably transporting electrons, and the function of additionally hindering the transport of holes. These layers increase the number of holes and electrons injected into the light-emitting layer. • Confine, optimize recombination area, and improve luminous efficiency. The organic layer 24 may also serve as these layers. For example, in the case of serving as both the light emitting layer and the electron injection / transport layer, tris (8-quinolinolato) aluminum (Alq ₃ ) or the like. Is preferably used.

  The cathode 25 is formed on the organic layer 24. In the present embodiment, in order to extract light from the substrate 21 side, examples of the material used for the cathode 25 include alkali metals such as Li, Na, and K, alkaline earth metals such as Mg, Ca, Sr, and Ba, and La. , Ce, and other rare earth metals, Al, In, Ag, Au, Sn, Zn, Zr, and the like, and at least one of them may be selected. The cathode 25 is formed in a linear shape (long bar shape), and a plurality of the cathodes 25 are arranged on the substrate 21 so as to be orthogonal to the anode and parallel to each other. The cathode 25 is generally formed by resistance heating vapor deposition, induction heating vapor deposition, electron beam vapor deposition, sputtering, or ion plating. The cathode 25 is separated by an element separator (not shown) formed so as to be substantially orthogonal to the anode 22.

  The element separator (separation layer) is formed from an insulating material such as a photosensitive resist. The element separator is formed between the cathodes 25 and further on an insulating layer (not shown) so as to be substantially orthogonal to the anode 22. When the element isolation body is formed by a photolithography process, it is preferable to use a resist because polyimide has a problem that the manufacturing cost increases. For example, a photosensitive resist coating process, an exposure process, and a development process are preferable. Etc. are formed. As will be described in detail later, the anode protective layer 32 and the cathode protective layer 37 can also be formed by using a photosensitive resist for forming the element separator.

  The sealing plate (not shown) seals the anode 22, the organic layer 24, the cathode 25, etc. constituting the organic EL panel 20 and protects them from the external environment. As the sealing plate, a sealing substrate that is generally opposed to the substrate 21 is used, and an adhesive is applied around the area (display area) where the organic layer 24 or the like is formed, and is adhered to the substrate 21 and bonded. . Note that an insulating layer and / or a conductive layer may be formed instead of the sealing plate for sealing.

  The anode lead-out wiring 31 is made of a conductive material such as tin-doped indium oxide (ITO). The anode lead-out wiring 31 is formed on the substrate 21 and pulls out the anode 22 to the peripheral region of the substrate 21. One end of the anode lead-out wiring 31 is connected to the anode 22, and the other end is connected to the anode TCP 35 on which the anode IC 34 is mounted. In this way, the anode 22 and the anode IC 34 are electrically connected. Further, as shown in FIGS. 3B and 3C, an anode protective layer 32 is formed on the upper surface of the anode lead-out wiring 31 in the region between the organic EL panel 20 and the anode TCP 35, and further the anode An anode resin film 33 is formed so as to cover the lead wiring 31 and the anode protective layer 32. The anode protective layer 32 and the anode resin film 33 are protected from the external environment, particularly moisture, and can prevent corrosion well. As shown in FIG. 3C, the anode protective layer 32 is not formed on the upper surface of the anode lead-out wiring 31 in the region covered with the anode TCP 35. The anode lead-out wiring 31 is generally formed using a film forming process, a photolithography process, or the like, but may be formed by vapor deposition using a metal mask.

  The anode protective layer 32 is made of a material, resist, inorganic compound, or the like that hardly corrodes, and as shown in FIGS. 3A to 3C, is disposed between the anode TCP 35 and a sealing plate (not shown). It is formed on the formed anode lead-out wiring 31. The anode lead-out wiring 31 is protected from moisture and the like by the anode protective layer 32, and corrosion can be prevented. For example, in a conventional image display device in which a protective layer is not formed, one end of the lead-out wiring is covered with a sealing plate and the other end is covered with TCP, but is exposed in a region between the sealing plate and TCP. Therefore, there is a possibility that the anode lead-out wiring in these regions may be corroded by moisture or the like, and there is a problem that the metal of the lead-out wiring is oxidized or melted particularly when water adheres. However, in this embodiment, since the anode protective layer 32 is formed in these regions, corrosion due to moisture or the like can be prevented. Furthermore, in this embodiment, since the anode protective layer 32 is further covered with the anode resin film 33, the influence of moisture and the like can be prevented more favorably. The anode protective layer 32 preferably has a thickness of 0.5 μm to 20 μm, more preferably 1 to 10 μm. This is because if the thickness of the anode protective layer 32 is 0.5 μm or less, a sufficient moisture-proof effect cannot be obtained. Moreover, when the thickness of the anode protective layer 32 is formed to be 20 μm or more, it becomes close to the thickness of the adhesive used for bonding the sealing plate, and it becomes impossible to obtain sufficient sealing strength of the sealing plate, This is because the sealing plate is peeled off from the substrate 21 and a sufficient sealing function of the organic EL panel 20 cannot be realized. Further, if the thickness is 20 μm or more, there is a problem that the manufacturing cost increases. In addition, when the anode protective layer 32 is comprised from a resist instead of an inorganic compound, it is preferable that a protective layer is not formed in the adhesion area | region of a sealing board. This is because moisture may enter the inside of the sealing plate through the resist constituting the protective layer.

  When an insulating material is used as the anode protective layer 32, it is preferable to use an insulating material that does not react with moisture. If a photosensitive resist is used, the anode protective layer 32 is accurately covered only in the region where the lead wiring is exposed. It becomes possible to do. In particular, if an insulating layer covering the end of the anode or an element separator formed between the cathodes is used, the anode protective layer 32 can be formed on the anode lead-out wiring 31 without increasing the number of manufacturing steps.

  The anode resin film 33 is made of a material that does not easily corrode, and is formed on the substrate 21 so as to cover the anode protective layer 32. By coating the resin on the anode protective layer 32, corrosion of the anode lead-out wiring 31 can be prevented more reliably.

  The anode IC 34 is composed of an IC (Integrated Circuit), and controls the voltage applied to the anode 22. Further, the anode IC 34 is installed on the anode TCP 35 as shown in FIG. 3A, and is further electrically connected to the anode lead-out wiring 31 through the anode TCP 35.

  The anode TCP 35 is composed of a tape carrier package, and the anode IC 34 is mounted on the upper surface. The anode TCP 35 is not limited to a tape carrier package, and FPC or the like can also be used.

  The cathode lead-out wiring 36 is made of a conductive material and is formed on the substrate 21, similarly to the anode lead-out wiring 31. The cathode lead wiring 36 leads the cathode 25 to the peripheral area of the substrate 21. One end of the cathode lead-out wiring 36 is connected to the cathode 25 and the other end is connected to the cathode TCP 40 on which the cathode IC 39 is mounted. 4A to 4C, a cathode protective layer 37 is formed on the upper surface of the cathode lead-out wiring 36, and the cathode resin is further covered so as to cover the cathode lead-out wiring 36 and the cathode protective layer 37. A film 38 is formed. Thus, the cathode protection layer 37 and the cathode resin film 38 are protected from the external environment, particularly moisture, and corrosion can be prevented well. As shown in FIG. 4C, the cathode protective layer 37 is not formed on the upper surface of the cathode lead-out wiring 36 in the region covered with the cathode TCP 40.

  The cathode protective layer 37 is formed of a resist, an inorganic compound, or the like that is unlikely to corrode similarly to the anode protective layer 32. When using a resist, it is preferable to use a resist that does not react with moisture. If an insulating layer covering the end of the anode or an element separator formed between the cathodes is used, the cathode protective layer 37 can be easily formed without increasing the number of manufacturing steps. If the thickness of the cathode protective layer 37 is 0.5 μm or less like the anode protective layer 32, a sufficient moisture-proof effect cannot be obtained. There is a possibility that the sealing plate peels off from the substrate 21 due to an increase in size. Further, when the thickness is 20 μm or more, there is a problem that the manufacturing cost increases. Therefore, the cathode protective layer 37 is preferably formed to a thickness of 0.5 μm to 20 μm, more preferably 1 μm to 10 μm.

  The cathode resin film 38 is made of a material that does not easily corrode, and is formed on the substrate 21 so as to cover the cathode protective layer 37. By forming the cathode resin film 38 on the cathode protective layer 37, corrosion of the cathode lead wiring 36 can be more reliably prevented.

  The cathode IC 39 is composed of an IC (Integrated Circuit), and controls the voltage applied to the cathode 25. Further, the cathode TCP 40 is composed of a tape carrier package, and the cathode IC 39 is mounted on the upper surface as shown in FIG. The cathode TCP 40 is not limited to the tape carrier package, and FPC or the like can also be used.

  In the image display device 10 having the above-described configuration, the anode protective layer 32 is formed on the anode lead-out wiring 31 between the anode TCP 35 and the sealing plate, and the cathode lead-out wiring between the cathode TCP 40 and the sealing plate. A cathode protective layer 37 is formed on 36. As a result, the anode lead-out wiring 31 and the cathode lead-out wiring 36 can be protected from corrosion due to the external environment, particularly oxidation due to moisture. Further, in the present embodiment, the anode resin film 33 is formed so as to cover the anode protective layer 32 and the cathode resin film 38 is formed so as to cover the cathode protective layer 37, so that the anode lead-out wiring 31 and the cathode lead-out are further improved. The wiring 36 can be protected from the external environment. Therefore, it is possible to provide an image display device including a lead wiring having good reliability.

  Next, a method for manufacturing the image display device 10 according to the embodiment of the present invention will be described with reference to FIG. In this embodiment, a passive image display device will be described as an example. In this embodiment, the anode functions as a data electrode and the cathode functions as a scanning electrode. 5A to 5C correspond to a cross-sectional view taken along line XX of the image display device 10 illustrated in FIG.

First, the substrate 21 is prepared.
Subsequently, for example, an ITO film (transparent electrode film) is formed on the substrate 21 to a thickness of, for example, 100 nm by a sputtering method. Next, an ITO film is formed into 288 linear pattern shapes by photolithography. As a result, the anode 22 is formed as shown in FIG.

  More specifically, a photosensitive resist film is formed by spin coating on the substrate 21 on which the ITO film is formed, and the substrate 21 is irradiated with UV light that passes through a light-shielding reticle mask having a predetermined pattern shape. The photosensitive resist film is exposed. Thereafter, the substrate 21 is immersed in a developing solution for a predetermined time to remove the photosensitive resist film in a predetermined pattern shape, and further immersed in an etching solution to etch away the ITO film other than the portion covered with the photosensitive resist film. Thus, the anode 22 is formed into a pattern of 288 straight lines made of an ITO film. The anode lead wire 31 and the cathode lead wire 36 are formed in the same manner.

  Next, an insulative positive resist is applied on the substrate 21 and patterned so as to cover at least the edge of the anode so as to have a 288 × 64 opening on the surface of the anode 22. As a result, an insulating layer 52 having an opening 52a is formed on the anode 22 as shown in FIG. Further, the anode lead-out wiring 31 formed of the same material as the 288 anodes 22 existing outside the opening and the 64 cathode lead-out wirings 26 are covered with at least a part of the lead-out wiring. An insulating positive resist is formed, and the anode protective layer 32 and the cathode protective layer 37 are formed. The anode protective layer 32 and the cathode protective layer 37 are preferably not formed in the region where the sealing plate is bonded. In the case where the insulating layer is formed by a photolithography process, it is preferable to use a resist because polyimide has a problem that the manufacturing cost increases.

  Further, an insulating resin film is formed by spin coating, and the element separator 54 intersects with the anode 22 as shown in FIG. 5C by the photolithographic technique, and is approximately orthogonal to the stripe direction of the anode 22. And 65 pieces were formed on the positive resist. When forming the element separator 54, at least a part of each of the lead wires is formed on the anode lead wires 31 and 64 cathode lead wires 36 formed of the same material as the 288 anodes 22. The insulating resin film may be formed so as to cover, and a protective layer for the lead wiring may be formed. In addition, when the element separator is formed by a photolithography process, it is preferable to use a resist because polyimide is used as the resist, because manufacturing costs increase.

The substrate 21 thus produced was subjected to a dry cleaning process, then placed in a vapor deposition device, evacuated to at least 1 × 10 ⁻⁴ Pa or less, and then an organic layer 24 was formed by a vacuum vapor deposition method. Specifically, CuPc (copper phthalocyanine) is formed to 80 nm as a hole injection layer on the substrate 21 put into the chamber, and then a TPD (triphenyldiamine) layer is formed to 30 nm as a hole transport layer, and then light emission is performed. As a layer, 50 nm of Alq ₃ (Tris · 8-quinolinolato · aluminum) was formed.

Next, the substrate 21 on which the organic layer 24 is formed is subsequently transferred to a vacuum chamber prepared for forming the cathode 25 while maintaining the vacuum, and an electron injection layer (at least 1 × 10 ⁻⁴ Pa or less in vacuum). The cathode 25 and the cathode 25 were formed as shown in FIG. Specifically, the electron injection layer was formed of lithium oxide by a vacuum vapor deposition method, and the film thickness was, for example, 0.5 nm. The cathode 25 was formed by electron beam evaporation using aluminum, and the film thickness was, for example, 300 nm. The cathode 25 was separated into 64 pieces by the element separator, and was connected to the cathode lead-out wiring 36 already formed of the same material as the anode 22. In FIG. 5C, although not shown, the substrate 21 is bonded with a sealing plate, and then the anode TCP 35 and the cathode are formed on the anode lead-out wiring 31 formed on the substrate 21 and existing outside the sealing plate. A cathode TCP 40 is connected to the lead wiring 36. Thereby, the image display apparatus 10 is formed.

  As described above, in the method of manufacturing the image display device according to the present embodiment, the anode protective layer 32 on the anode lead-out wiring 31 and the cathode protective layer 37 of the cathode lead-out wiring 36 are combined with the insulating layer 52 or the element separator 54. At the same time as forming. Thus, the protective layer can be formed on the lead-out wiring exposed from the sealing means without providing a separate protective layer forming step. Therefore, it is possible to provide a method for manufacturing an image display device that can effectively prevent corrosion due to moisture without increasing the number of manufacturing steps and further without increasing costs. Furthermore, in the manufacturing method of the present embodiment, when forming the insulating layer 52, the anode protective layer 32 and the cathode protective layer 37 are also formed in the same process using an insulating positive resist. Unlike the case of forming by film formation and patterning, it is possible to prevent generation of dust and a decrease in yield.

  In the image display device in which the protective layer is not formed, there is a problem that corrosion of the lead wiring increases the resistance of the lead wiring, decreases the luminance, and cannot obtain a sufficient display quality. However, according to this embodiment, by forming a protective layer on the lead-out wiring, corrosion of the lead-out wiring can be prevented, so that an increase in the resistance of the lead-out wiring can be prevented, and a decrease in luminance can be prevented. Sufficient display quality can be obtained.

  The present invention is not limited to the above-described embodiment, and various modifications and applications are possible. For example, in the above-described embodiment, a configuration in which light emitted from the organic layer is extracted from the substrate 21 side is described as an example. However, the configuration is not limited thereto, and the light may be extracted from the cathode side. In this case, the substrate 21 may be an opaque material, such as ceramics such as alumina, a metal sheet such as stainless steel that has been subjected to an insulation treatment such as surface oxidation, a thermosetting resin, a thermoplastic resin, or the like. it can. Note that it is preferable to use an inexpensive glass substrate from the viewpoint of manufacturing cost.

  As the cathode, it is preferable to form a thin metal such as alkali metal, alkaline earth metal, rare earth metal, Al, In, Ag, Au, Sn, Zn, Zr, etc., for example, 100 nm or less, More preferably, it should be 40 nm or less. Further, a material having transparency to visible light may be used as the cathode. In this case, materials that can be used include conductive materials such as ITO, IZO, and ZnO—Al. Note that a structure in which the above-described metal and a material having permeability are combined may be employed.

It is a top view which shows the structural example of the image display apparatus which concerns on embodiment of this invention. It is sectional drawing which shows the structural example of the organic electroluminescent panel which comprises an image display apparatus. FIG. 3A is a plan view particularly showing a region where the anode lead-out wiring of the image display device is formed. 3B is a cross-sectional view taken along line AA in FIG. 3A, and FIG. 3C is a cross-sectional view taken along line BB. FIG. 4A is a plan view particularly showing a region where the cathode lead-out wiring of the image display device is formed. 4B is a cross-sectional view taken along the line CC of FIG. 4A, and FIG. 4C is a cross-sectional view taken along the line DD. It is a figure which shows typically the manufacturing method of the image display apparatus which concerns on embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Image display apparatus 20 Organic EL panel 21 Board | substrate 22 Anode 24 Organic layer 25 Cathode 31 Anode lead-out wiring 32 Anode protective layer 33 Anode resin film 34 Anode IC
35 TCP for anode
36 Cathode extraction wiring 37 Cathode protection layer 38 Cathode resin film 39 IC for cathode
40 TCP for cathode
52 Insulating layer 54 Element separator

Claims (5)

An insulating substrate;
A first electrode formed on the substrate;
An organic layer formed on the first electrode;
A second electrode formed on the organic layer;
A first lead wiring that leads the first electrode to a peripheral region of the substrate;
A second lead-out wiring that leads the second electrode to a peripheral region of the substrate;
Sealing means for sealing the first electrode, the organic layer, and the second electrode;
A protective layer formed on the first lead wiring and / or the second lead wiring and on a part of the outside of the sealing means;
An insulating layer formed of an insulating material so as to cover at least an end of the first electrode;
The image display device, wherein the protective layer is formed of the same material as the insulating layer. An insulating substrate;
A first electrode formed on the substrate;
An organic layer formed on the first electrode;
A second electrode formed on the organic layer;
A first lead wiring that leads the first electrode to a peripheral region of the substrate;
A second lead-out wiring that leads the second electrode to a peripheral region of the substrate;
Sealing means for sealing the first electrode, the organic layer, and the second electrode;
A protective layer formed on the first lead wiring and / or the second lead wiring and on a part of the outside of the sealing means;
A separation layer formed of an insulating material between the second electrodes;
The image display apparatus, wherein the protective layer is formed of the same material as the separation layer. An insulating substrate;
A first electrode formed on the substrate;
An organic layer formed on the first electrode;
A second electrode formed on the organic layer;
A first lead wiring that leads the first electrode to a peripheral region of the substrate;
A second lead-out wiring that leads the second electrode to a peripheral region of the substrate;
Sealing means for sealing the first electrode, the organic layer, and the second electrode;
A protective layer formed on the first lead wire and / or the second lead wire and on a part of the outside of the sealing means;
The image display device, wherein the protective layer is formed of a photosensitive resist.   4. The image display device according to claim 1, wherein a resin is applied on the protective layer. A first electrode forming step of forming a first electrode on a substrate;
An insulating layer forming step of forming an insulating layer on the first electrode;
A first lead wiring forming step of forming a first lead wiring for leading the first electrode to a peripheral region of the substrate;
An organic layer forming step of forming an organic layer on the first electrode;
A second electrode forming step of forming a second electrode on the organic layer;
A separation layer forming step of forming a separation layer for separating the second electrode;
A second lead wiring forming step of forming a second lead wiring for leading the second electrode to the peripheral region of the substrate;
A sealing means forming step for forming a sealing means for sealing the first electrode, the organic layer, and the second electrode,
In any one of the insulating layer forming step and the separation layer forming step, a protective layer is formed on the first lead wiring and / or the second lead wiring and at a part outside the sealing means. A method for manufacturing an image display device.

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