JP2007242436A - Manufacturing method of organic electroluminescent device, and organic electroluminescent device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic electroluminescent display device and its manufacturing method. <P>SOLUTION: In the organic electroluminescent display device formed by film-forming a light emitting organic functional layer on the whole face of a substrate by an application method, and in the case an unnecessary light emitting organic functional layer except a light emitting region is removed by dry etching by plasma, by installing a protecting member on a cathode including the light emitting region, damage to the organic functional layer caused by the plasma generated in a removing process of the organic functional layer except the light emitting region can be prevented in the organic functional layer including the light emitting layer in the light emitting region. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an organic electroluminescence (hereinafter abbreviated as EL) device and a method for manufacturing the same.

  Compared with a liquid crystal display device, an organic EL display device has many advantageous characteristics as a display such as a high response speed, a wide viewing angle, good visibility unique to a self-luminous element, and a wide temperature range that can be driven. Therefore, it has been studied to adopt an organic EL display device in an electronic device that currently requires many display devices.

  As a patterning technique for light-emitting organic materials in manufacturing a full-color organic EL display device, patterning techniques for RGB light-emitting materials by vapor deposition using a shadow mask, or patterning techniques using a solution of RGB light-emitting materials and an inkjet method are generally used. It is used. Alternatively, as a technique for patterning by removing a region other than a predetermined region of the formed organic layer, a dry etching method using a photoresist and plasma is known as, for example, Patent Document 1. Further, Patent Document 2 is cited as a conventional technique for a wet etching method using a photoresist.

JP-A-11-144865 JP-A-10-261486

  However, the organic layer removal technology by dry etching described above is not sufficient because the organic layer is protected only from the metal thin film of the electrode by plasma or developer. Is concerned. Further, in the conventional technique for removing an unnecessary organic layer by the above-described wet etching method, there is a concern that a defect due to erosion of the removal liquid to the organic layer may occur.

  The present invention solves such problems. In manufacturing an organic EL display device such as an organic EL display device or a printer head, an organic layer is formed by coating on the entire surface, and then dry etching using plasma. Thus, when an unnecessary portion is removed, the organic layer is not damaged by plasma, and a good light-emitting element can be provided.

  According to the method of manufacturing an organic electroluminescence device of the present invention, at least one organic electroluminescence element formed by sandwiching an organic functional layer including at least one light-emitting organic thin film on a substrate between a first electrode and a second electrode is provided. In the manufacturing method of the organic electroluminescence device formed, the step of forming the first electrode on the substrate, the step of forming the organic functional layer on the first electrode, and the organic functional layer The method includes a step of forming the second electrode, a step of forming a protective member on the second electrode, and a step of removing the organic functional layer formed in a region other than the region overlapping with the protective member. And

  According to the said structure, the organic functional layer is protected by the 2nd electrode material and the protection member, and the damage to the organic functional layer which generate | occur | produces at the time of the removal process of an organic functional layer can be prevented.

  In the present invention, the first electrode is made smaller than the second electrode, so that a region overlapping the first electrode of the light-emitting organic thin film becomes a light-emitting region.

  The protective member may be formed so as to cover a region overlapping with the first electrode or the light emitting region. According to the above configuration, the organic functional layer including the light emitting layer in the light emitting region is protected by the second electrode material and the protective member, and damage to the organic functional layer that occurs during the removal process of the organic functional layer other than the light emitting region. Can be prevented.

  Furthermore, in the method for manufacturing an organic electroluminescence device of the present invention, the organic functional layer is formed on the entire surface of the substrate by a wet coating method, and the organic function is formed on the substrate other than the cathode region including the protective member. The layer is removed by a peeling process after forming the protective member.

  According to the above configuration, the organic functional layer including the light emitting layer in the light emitting region is protected by the cathode material and the protective member, and prevents damage to the organic functional layer that occurs during the removal process of the organic functional layer other than the light emitting region. I can do it. Moreover, since the wet whole surface coating method can be used, a simple manufacturing method can be provided.

  In the present invention, the wet coating method is a spin coating method.

  According to the above configuration, since a spin coating method can be used, a process cost can be reduced and a simple manufacturing method can be provided.

  In the present invention, the peeling step is a dry removal method using plasma.

  According to the above configuration, the organic functional layer including the light emitting layer in the light emitting region is protected by the cathode material and the protective member, and plasma damage to the organic functional layer generated during the removal process of the organic functional layer other than the light emitting region is prevented. Can be prevented. In addition, since a dry etching method using plasma can be used, a process cost can be reduced and a simple manufacturing method can be provided.

  In the present invention, the dry removal method using the plasma is performed in the presence of oxygen or argon.

  According to the above configuration, since a dry etching method using plasma in the presence of a general and inexpensive gas can be used, a process cost can be reduced and a simple manufacturing method can be provided.

  In the present invention, the peeling step is a wet removal method using at least one kind of solvent in which the organic functional layer can be dissolved.

  According to the above configuration, the organic functional layer including the light emitting layer in the light emitting region is protected by the cathode material and the protective member, and prevents damage to the organic functional layer that occurs during the removal process of the organic functional layer other than the light emitting region. I can do it.

  Further, in the present invention, the organic functional layer is interposed between a part of the second electrode region outside the region where the protective member is installed and a contact part installed on a part of the substrate outside the light emitting region. A step of connecting with a metal thin film after the peeling step, wherein the contact portion is a second electrode extraction portion for extracting the second electrode to a mounting terminal portion.

  According to the above configuration, since the connection between the second electrode and the contact portion for taking out the second electrode can be reliably performed, a highly reliable display device can be provided.

In the present invention, the metal thin film is made of aluminum formed by either a sputtering method or a vapor deposition method.
According to the above configuration, an aluminum thin film that is stable electrically or physically can be formed by a highly reliable film forming method, so that the connection between the second electrode and the contact portion for taking out the second electrode has high reliability. Thus, a highly reliable display device can be provided.

  In the present invention, the protective member is a resin.

  According to the said structure, since resin which can be apply | coated is used as a protective member, it can be made an easy and cheap manufacturing process, and can implement | achieve a panel design with a high freedom degree.

  In the present invention, the protective member is a metallic protective film made of a heavy metal having an atomic weight of 180 or more or an alloy containing them.

  According to the above configuration, since the metal thin film that can be formed by vapor deposition is provided as the protective member, the protective film can be formed by vacuum consistent after the formation of the second electrode, and the manufacturing process can be simplified and reliable. A high-performance display device can be provided.

  Moreover, in this invention, the said protection member is laminated | stacked and installed in order from the said board | substrate side in order of the said metal protective film and the said resin, It is characterized by the above-mentioned.

  According to the above configuration, since the protective member is stacked, plasma damage due to organic film peeling can be further reduced, and a display device with higher reliability can be provided.

  In the present invention, the protective member is a photosensitive epoxy resin.

  According to the above configuration, by using a photosensitive epoxy resin as a protective member, the manufacturing process can be shortened by shortening the curing time, or defects due to poor curing can be reduced, and the set film thickness of the protective member can be freely increased. It is possible to have a high degree of freedom and process design with a high degree of freedom.

  In the present invention, the protective member is a photosensitive acrylic resin.

  According to the above configuration, by using a photosensitive acrylic resin as a protective member, the manufacturing process can be shortened by shortening the curing time, or defects due to poor curing can be reduced, and the set film thickness of the protective member can be increased freely. It is possible to have a high degree of freedom and process design with a high degree of freedom.

  In the present invention, the metallic protective film is formed by vapor deposition.

  According to the above configuration, since the metal thin film that can be formed by vapor deposition is provided as the protective member, the protective film can be formed by vacuum consistent after the formation of the second electrode, and the manufacturing process can be simplified and reliable. A high-performance display device can be provided.

  In the present invention, in the region where the organic functional layer on the substrate is removed, the substrate and a sealing counter substrate are bonded together with an adhesive.

  According to the said structure, a more reliable display apparatus can be provided by interrupting | blocking and sealing the light emission area | region in which the organic EL element was formed from external air.

  In the present invention, a member having a moisture adsorption function is provided in a region sealed by the substrate and the sealing counter substrate.

  According to the above configuration, the light emitting region where the organic EL element is formed is sealed off from the outside air and sealed, and a minute amount of moisture that may permeate may be adsorbed by the moisture adsorbing member, thereby providing a more reliable display device. Can be provided.

  In the present invention, the first electrode is a cathode, the second electrode is an anode, and the organic functional layer is a laminated film of a hole injection layer and the light-emitting organic thin film. .

  Moreover, the organic electroluminescent device of the present invention is manufactured by the above-described method for manufacturing an organic electroluminescent device.

  By adopting the above configuration, an organic EL device with higher reliability can be provided.

  Furthermore, the organic electroluminescence device of the present invention has at least one organic electroluminescence element formed by sandwiching an organic functional layer including at least one light-emitting organic thin film on a substrate between a first electrode and a second electrode. In the formed organic electroluminescence device, the first electrode is provided on the substrate, the organic functional layer is provided on the first electrode, and the second electrode is provided on the organic functional layer, A protective member formed so as to cover a light emitting region formed in a region overlapping with the first electrode and the second electrode is provided on the second electrode, and other than the region overlapping the protective member in a plane Is characterized in that the organic functional layer is not provided.

  As described above, in an organic EL display device in which a light emitting organic functional layer is formed on the entire surface of a substrate by a coating method, when unnecessary light emitting organic functional layers other than the light emitting region are removed by dry etching using plasma. By providing a protective member on the cathode including the light emitting region, the organic functional layer including the light emitting layer in the light emitting region prevents damage to the organic functional layer due to plasma generated during the removal process of the organic functional layer other than the light emitting region. I can do it. Therefore, it is possible to provide a highly reliable organic EL device without being damaged by plasma at the time of removing a light-emitting organic functional layer that does not require a light-emitting organic functional layer in a light-emitting region.

  Therefore, by using the organic EL device described above, a highly reliable organic EL display device, printer head, or the like can be realized.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view of the present embodiment up to installation of a protective member. FIG. 2 is a schematic cross-sectional view of the completed embodiment.

  An anode layer 102 is formed on the substrate 101, and a hole injection layer 103 is formed on the entire surface of the substrate by spin coating and dried. A light emitting layer 104 is formed on the whole surface of the substrate by spin coating and dried on the hole injection layer. Subsequently, the material constituting the cathode layer is formed by vacuum vapor deposition, and then patterned into a predetermined shape, thereby forming the cathode layer 105 on the light emitting layer. Next, a photosensitive epoxy resin is applied as a material constituting the protective member, and the protective member 106 is placed on a portion covering the light emitting region on the cathode by photo-curing using a predetermined mask. Further, the hole injection layer 103 and the light emitting layer 104 are removed by a dry etching method using plasma using the protective member side as a mask.

  The substrate 101 in this embodiment is a glass substrate, and the anode 102 is a conductive layer made of an oxide such as ITO (Indium Tin Oxide) or amorphous transparent conductive In—Zn—O, and is formed by sputtering or the like. Is done.

  The hole injection layer 103 in this embodiment is made of an organic compound thin film such as Polyethylendioxythiophene / Polystyrenesulfonete (Baytron P, trade name of Bayer) or an aromatic amine derivative.

  The light emitting layer 103 in this embodiment is made of a polymer light emitting material such as p-phenylene vinylene (PPV) or polyfluorene (PF). As a material for the light emitting layer 104, a metal complex such as tris (8-quinolinolato) aluminum complex or bis (benzoquinolinolato) beryllium, or a low molecular fluorescent material such as perylene (blue) or quinacridone (green) is used instead. A mixture of molecular materials may be used. In this embodiment, the hole injection layer 103 and the light emitting layer 104 are formed by a spin coating method, but a wet coating method such as dipping or the like may be used.

  The cathode layer 105 in the present embodiment is an ultrathin layer (1 to 20 nm) made of an alkali metal or alkaline earth metal such as Ca or Li having a low work function and a high electron injection property, or a fluoride or oxide thereof. ) In contact with the organic layer, and further, a highly conductive metal such as Al, which is stable against oxygen and moisture, is formed to have a film thickness of, for example, 100 nm or more by vapor deposition.

  In the present embodiment, a photosensitive epoxy resin is used as the protective member, but a resin such as acrylic or urethane may be used.

  In this embodiment, the plasma etching for removing the hole injection layer 103 and the light emitting layer 104 is performed under reduced pressure in the presence of argon, but may be in the presence of a rare gas other than argon or oxygen.

(Second embodiment)
Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a schematic cross-sectional view after the protective member is installed in the present embodiment. FIG. 4 is a schematic cross-sectional view after removing the organic layer. FIG. 5 is a schematic cross-sectional view of the completed embodiment.

  An anode layer 102 and a cathode extraction portion 201 are formed on the substrate 101, and a hole injection layer 103 is applied to the entire surface of the substrate 101 by spin coating so as to cover the anode layer 102 and the cathode extraction portion 201 and dried. To do. Further, a light emitting layer 104 is formed on the whole surface of the substrate by spin coating and dried on the hole injection layer. Subsequently, the material constituting the cathode layer is formed by vacuum vapor deposition, and then patterned into a predetermined shape, thereby forming the cathode layer 105 on the light emitting layer. Next, a photosensitive epoxy resin is applied as a material constituting the protective member, and the protective member 106 is placed on a portion covering the light emitting region on the cathode by photo-curing using a predetermined mask. Further, the hole injection layer 103 and the light emitting layer 104 are removed by a dry etching method using plasma using the protective member as a mask. Next, a part of the cathode layer and a part of the cathode extraction part 201 exposed by removing the hole injection layer and the light emitting layer are connected by an Al thin film 202 to be electrically connected.

  The substrate 101 in this embodiment is a glass substrate, and the anode 102 is a conductive layer made of an oxide such as ITO (Indium Tin Oxide) or amorphous transparent conductive In—Zn—O, and is formed by sputtering or the like. Is done.

  The hole injection layer 103 in the present embodiment is made of an organic compound thin film such as Polyethylendioxythiophene / Polystyrenesulfonete (Baytron P, trademark of Bayer) or an aromatic amine derivative.

  The light emitting layer 103 in the present embodiment is made of a polymer light emitting material such as p-phenylene vinylene (PPV) or polyfluorene (PF). As a material for the light emitting layer 104, a metal complex such as tris (8-quinolinolato) aluminum complex or bis (benzoquinolinolato) beryllium, or a low molecular fluorescent material such as perylene (blue) or quinacridone (green) is used instead. A mixture of molecular materials may be used. In this embodiment, the hole injection layer 103 and the light emitting layer 104 are formed by a spin coating method, but a wet coating method such as dipping or the like may be used.

  The cathode layer 105 in this embodiment is an ultrathin layer (1 to 20 nm) made of an alkali metal or alkaline earth metal such as Ca or Li having a low work function and a high electron injection property, or a fluoride or oxide thereof. Is formed in contact with the organic layer, and further, a highly conductive metal such as Al, which is stable against oxygen and moisture, is formed to have a film thickness of, for example, 100 nm or more by vapor deposition.

  In the present embodiment, a photosensitive epoxy resin is used as the protective member 106, but a resin such as acrylic or urethane may be used.

  In this embodiment, the plasma etching for removing the hole injection layer 103 and the light emitting layer 104 is performed under reduced pressure in the presence of argon, but may be in the presence of a rare gas other than argon or oxygen.

  In the present embodiment, the Al thin film 202 is formed by vapor deposition in order to connect a part of the cathode layer and a part of the cathode extraction part exposed by removing the hole injection layer and the light emitting layer. However, the material is not limited as long as it is a highly conductive metal material such as Ag or Cu, and the formation method is not limited to the vapor deposition method, and sputtering or CVD may be used. .

(Third embodiment)
In the first or second embodiment, the protective member 106 is made of a metal material instead of a resin.

  As the metal material in the present embodiment, a single substance, a mixture or an alloy of heavy metals having an atomic weight of 180 or more such as gold is used, and is formed by vapor deposition or sputtering. The film thickness is not limited, but is preferably 200 nm or more.

(Fourth embodiment)
Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings. FIG. 6 is a schematic cross-sectional view of the completed embodiment.

  An anode layer 102 and a cathode extraction portion 201 are formed on the substrate 101, and a hole injection layer 103 is applied to the entire surface of the substrate 101 by spin coating so as to cover the anode layer 102 and the cathode extraction portion 201 and dried. To do. A light emitting layer 104 is formed on the whole surface of the substrate by spin coating and dried on the hole injection layer. Subsequently, the material constituting the cathode layer is formed by vacuum vapor deposition, and then patterned into a predetermined shape, thereby forming the cathode layer 105 on the light emitting layer. Next, a photosensitive epoxy resin is applied as a material constituting the protective member, and the protective member 106 is placed on a portion covering the light emitting region on the cathode by photo-curing using a predetermined mask. Further, the hole injection layer 103 and the light emitting layer 104 are removed by a dry etching method using plasma using the protective member as a mask. Next, a part of the cathode layer and a part of the cathode extraction part exposed by removing the hole injection layer and the light emitting layer are connected by the Al thin film 202 to be electrically connected.

  Next, the desiccant 402 is installed on the digging surface of the concave sealing member 401 so that a sealed space is formed between the sealing member 401 and the substrate 101, and the desiccant 402 is confined in the sealed space. Then, the peripheral edge portion of the sealing member 401 and the substrate 101 are bonded and sealed with an adhesive 403.

  The substrate 101 in this embodiment is a glass substrate, and the anode 102 is a conductive layer made of an oxide such as ITO (Indium Tin Oxide) or amorphous transparent conductive In—Zn—O, and is formed by sputtering or the like. Is done.

  The hole injection layer 103 in the present embodiment is made of an organic compound thin film such as Polyethylendioxythiophene / Polystyrenesulfonete (Baytron P, trademark of Bayer) or an aromatic amine derivative.

  The light emitting layer 103 in the present embodiment is made of a polymer light emitting material such as p-phenylene vinylene (PPV) or polyfluorene (PF). As a material for the light emitting layer 104, a metal complex such as tris (8-quinolinolato) aluminum complex or bis (benzoquinolinolato) beryllium, or a low molecular fluorescent material such as perylene (blue) or quinacridone (green) is used instead. A mixture of molecular materials may be used. In this embodiment, the hole injection layer 103 and the light emitting layer 104 are formed by a spin coating method, but a wet coating method such as dipping or the like may be used.

  The cathode layer 105 in this embodiment is an ultrathin layer (1 to 20 nm) made of an alkali metal or alkaline earth metal such as Ca or Li having a low work function and a high electron injection property, or a fluoride or oxide thereof. Is formed in contact with the organic layer, and further, a highly conductive metal such as Al, which is stable against oxygen and moisture, is formed to have a film thickness of, for example, 100 nm or more by vapor deposition.

  In the present embodiment, a photosensitive epoxy resin is used as the protective member 106, but a resin such as acrylic or urethane may be used.

  In this embodiment, the plasma etching for removing the hole injection layer 103 and the light emitting layer 104 is performed under reduced pressure in the presence of argon, but may be in the presence of a rare gas other than argon or oxygen.

  In the present embodiment, the Al thin film 202 is formed by vapor deposition in order to connect a part of the cathode layer and a part of the cathode extraction part exposed by removing the hole injection layer and the light emitting layer. However, the material is not limited as long as it is a highly conductive metal material such as Ag or Cu, and the formation method is not limited to the vapor deposition method, and sputtering or CVD may be used. .

  The sealing member 401 in this embodiment uses a concave glass member, but is not limited thereto, and may be a flat glass substrate. Also, the material is not limited as long as the material is highly sealed without passing oxygen or moisture, such as metal or reinforced plastic, and the shape can be maintained permanently.

1 is a schematic cross-sectional view of an organic EL display device of the present invention. 1 is a schematic cross-sectional view of an organic EL display device of the present invention. 1 is a schematic cross-sectional view of an organic EL display device of the present invention. 1 is a schematic cross-sectional view of an organic EL display device of the present invention. 1 is a schematic cross-sectional view of an organic EL display device of the present invention. 1 is a schematic cross-sectional view of an organic EL display device of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 ... Substrate 102 ... Anode layer 103 ... Hole injection layer 104 ... Light emitting layer 105 ... Cathode layer 106 ... Protection member 201 ... Cathode extraction part 202 ... Al thin film 401 ... Recessed sealing member 402 ... Desiccant 403 ... Adhesive

Claims (21)

Method for manufacturing an organic electroluminescent device, wherein at least one organic electroluminescent element is formed, wherein an organic functional layer including at least one luminescent organic thin film is sandwiched between a first electrode and a second electrode on a substrate In
Forming the first electrode on the substrate;
Forming the organic functional layer on the first electrode;
Forming the second electrode on the organic functional layer;
Forming a protective member on the second electrode;
And a step of removing the organic functional layer formed outside the region overlapping with the protective member.   2. The organic electroluminescence device according to claim 1, wherein a region overlapping the first electrode of the light-emitting organic thin film becomes a light-emitting region by making the first electrode smaller than the second electrode. Manufacturing method.   The method for manufacturing an organic electroluminescence device according to claim 2, wherein the protective member is formed so as to cover a region overlapping the first electrode or the light emitting region.   The organic functional layer is formed on the entire surface of the substrate by a wet coating method, and the organic functional layer formed on the substrate other than the second electrode region including the protective member is removed by a peeling process after the protective member is formed. The method for producing an organic electroluminescence device according to claim 1, wherein the organic electroluminescence device is produced.   5. The method of manufacturing an organic electroluminescence device according to claim 4, wherein the wet coating method is a spin coating method.   6. The method of manufacturing an organic electroluminescence device according to claim 4, wherein the peeling step is a dry removal method using plasma.   7. The method of manufacturing an organic electroluminescence device according to claim 6, wherein the dry removal method using plasma is performed in the presence of oxygen or argon.   6. The method of manufacturing an organic electroluminescence device according to claim 4, wherein the peeling step is a wet removal method using at least one kind of solvent in which the organic functional layer can be dissolved. A metal thin film is formed between the part of the second electrode region outside the region where the protective member is installed and the contact part installed on a part of the substrate outside the light emitting region after the organic functional layer peeling step. And connecting with
The method for manufacturing an organic electroluminescence device according to claim 1, wherein the contact portion is a second electrode extraction portion for extracting the second electrode to a mounting terminal portion.   10. The method of manufacturing an organic electroluminescence device according to claim 9, wherein the metal thin film is made of aluminum formed by one of a sputtering method and a vapor deposition method.   The method for manufacturing an organic electroluminescent device according to claim 1, wherein the protective member is a resin.   The method for manufacturing an organic electroluminescent device according to any one of claims 1 to 10, wherein the protective member is a metallic protective film made of a heavy metal having an atomic weight of 180 or more or an alloy containing them.   The method for manufacturing an organic electroluminescence device according to any one of claims 1 to 12, wherein the protective member is laminated and installed in the order of the metal protective film and the resin from the substrate side.   The method for manufacturing an organic electroluminescence device according to claim 11, wherein the protective member is a photosensitive epoxy resin.   The method for manufacturing an organic electroluminescence device according to claim 11, wherein the protective member is a photosensitive acrylic resin.   The method for manufacturing an organic electroluminescence device according to claim 12, wherein the metallic protective film is formed by vapor deposition.   In the area | region where the said organic functional layer on the said board | substrate was removed, the said board | substrate and the opposing board | substrate for sealing are adhere | attached through the adhesive agent. The manufacturing method of the organic electroluminescent apparatus of description.   18. The method of manufacturing an organic electroluminescence device according to claim 17, wherein a member having a moisture adsorption function is provided in an area sealed by the substrate and the counter substrate for sealing.   19. The first electrode according to claim 1, wherein the first electrode is an anode, the second electrode is a cathode, and the organic functional layer is a laminated film of a hole injection layer and the light-emitting organic thin film. The manufacturing method of the organic electroluminescent apparatus as described in any one.   An organic electroluminescent device manufactured by the method for manufacturing an organic electroluminescent device according to any one of claims 1 to 19. In an organic electroluminescence device in which at least one organic electroluminescence element formed by sandwiching an organic functional layer including at least one light-emitting organic thin film on a substrate is sandwiched between a first electrode and a second electrode,
The first electrode is provided on the substrate;
The organic functional layer is provided on the first electrode;
The second electrode is provided on the organic functional layer;
A protective member formed to cover a light emitting region formed in a region where the first electrode and the second electrode overlap with each other is provided on the second electrode;
The organic electroluminescent device is characterized in that the organic functional layer is not disposed in a region other than the region overlapping the protective member in a planar manner.

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