JP2007267026A - High output amplifier - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To attain a low impedance input matching circuit and to reduce packaging variation in a high output amplifier using a large size power transistor which operates a high frequency band from an X band to a Ku band. <P>SOLUTION: In the high output amplifier including a transistor 1 in which a plurality of source terminals and gate terminals are alternatively arranged and the input matching circuit 2, in the input matching circuit 2, a viahole 8 conducted to the ground is provided at a position opposite to the source terminal of the transistor 1, a conductor 6 as a signal line is provided at a position opposite to the gate terminal of the transistor 1, the source terminal and the viahole 8 provided at a position opposite to the source terminal are connected to each other by using source wire 12 and the gate terminal and the conductor 6 provided at a position opposite to the gate terminal are connected to each other by using gate wire 13. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a high-power amplifier, and more particularly to a high-power amplifier that operates in a high-frequency region from the X band to the Ku band.

  In order to obtain an extremely large output of 10 W or more, a high output amplifier using a power transistor having a large gate width is required. In recent years, such high-power amplifiers are particularly required in mobile phone base stations and radar devices. In order to realize a high output amplifier using such a large size power transistor, it is necessary to connect a low impedance matching circuit to the power transistor.

  Here, the configuration of a conventional high-power amplifier will be described with reference to FIGS. FIG. 7 is a top view of a conventional high-power amplifier housed in a metal package. FIG. 8 is a view showing the upper surface, the side surface, and the AA ′ cross section of the metal package alone. FIG. 9 is a diagram showing a top surface, a side surface, and a BB ′ cross section of a single high-power amplifier.

  As shown in FIG. 7, in actual use, the high output amplifier 101 is housed in a metal package 102, and a conductor 103 as a signal line (transmission line) of the high output amplifier 101 and a conductor as a signal line of the metal package 102. 104 and a conductor 105 as a signal line of the high-power amplifier 101 and a conductor 106 as a signal line of the metal package 102 are connected by wires (metal thin wires) 124 and 125, respectively.

  As shown in FIG. 8, the metal package 102 includes bottom metal plates 107 and 108 on the bottom surface and a metal wall 109 on the side surface. Further, the ceramic substrate 110 having the conductor 104 therein is provided on the input side, and the ceramic substrate 111 having the conductor 106 inside is provided on the output side.

As shown in FIG. 9, the high-power amplifier 101 includes a power transistor 112 and an input matching circuit 113 and an output matching circuit 114 as its input / output matching circuit.
The power transistor 112 is provided on a substrate 115, and a plurality of source terminals (see “S” in the figure) and gate terminals (see “G” in the figure) are alternately arranged on one side and a drain on the other side. A plurality of terminals (see “D” in the figure) are arranged. A conductor 116 grounded to the ground (GND) is provided on the bottom surface of the substrate 115.

The input matching circuit 113 is configured by providing the above-described conductor 104 on a ceramic substrate 117 and providing a conductor 118 grounded to the ground on the bottom surface of the ceramic substrate 117.
The output matching circuit 114 is configured by providing the conductor 105 on a ceramic substrate 119 such as alumina or aluminum nitride, and providing the conductor 120 grounded to the ground on the bottom surface of the ceramic substrate 119.

  Note that the ceramic substrate 117 of the input matching circuit 113 has a higher dielectric constant than the ceramic substrate 119 of the output matching circuit 114 due to the relationship between the input and output impedances of the power transistor 112.

  Each gate terminal of the power transistor 112 is connected to the conductor 104 of the input matching circuit 113 by a gate wire 121. Each source terminal is connected to a bottom metal plate 107 grounded to the ground of the metal package 102 by a source wire 122. Each drain terminal is connected to the conductor 105 of the output matching circuit 114 by a drain wire 123.

The above is the configuration of the conventional high-power amplifier. Besides this, for example, in a package incorporating a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) as in the high-frequency transistor device proposed in Patent Document 1 Some have a configuration provided with a matching circuit.
JP 2005-110119 A

  By the way, in the high power amplifier having the configuration as shown in FIG. 9, when a low frequency is handled, a bonding wire is used to connect the input matching circuit and the gate terminal of the power transistor. The same applies to the case where the ground and the source terminal are connected. However, there is a problem if this connection method is used when handling high frequencies. This is because when a bonding wire is dropped from the source terminal of the power transistor to the ground, a large space is required between the power transistor and the input matching circuit for the wire bonder to function, and the distance between them (FIG. 9). (Refer to “D1”). For this reason, the bonding wire for connecting the input matching circuit and the gate terminal (see “gate wire 117” in FIG. 9) also becomes longer, resulting in an increase in parasitic inductance. An equivalent circuit of the high-power amplifier at this time is shown in FIG. As shown in the figure, when the bonding wire (gate wire) connecting the input matching circuit and the gate terminal becomes longer, the parasitic inductance L1 becomes larger. In the figure, Z0 is the input impedance of the input matching circuit, and Zlow is the input impedance of the power transistor. When such a high frequency is handled, there is a problem that when the parasitic inductance L1 increases, the input impedance of the power transistor increases and a low impedance input matching circuit cannot be realized. In addition, since the proportion of the parasitic inductor in the input matching circuit increases, there is a problem that mounting variations cannot be ignored.

  There is via technology as a solution to such a problem. This is a method of electrically connecting the ground and the source terminal by opening a via directly in the source terminal of the power transistor. According to this method, the distance between the power transistor and the input matching circuit (see “D1” in FIG. 9) can be shortened, so that the bonding wire connecting the input matching circuit and the gate terminal is shortened. Therefore, a low impedance input matching circuit can be realized. However, when this via technology is used, it is necessary to polish the substrate thinly, so there is a problem in applying it to a fragile substrate such as a SiC substrate. Also, the cost for producing vias cannot be ignored.

  Other solutions include flip chip technology and inverted microstrip technology, both of which have drawbacks. Flip-chip technology is a technique in which a pillar is made of a conductive material for each of the source terminal, gate terminal, and drain terminal of a power transistor, and is turned over and directly mounted on a matching circuit, but it has excellent high-frequency characteristics. There is a drawback in heat dissipation. Inverted microstrip technology is a technique in which an insulating material is deposited on the power transistor and covered with metal, but it is easy to conduct the source terminal and ground, but the insulating material is thickened to reduce the conductor loss. This is technically difficult.

  From the above, a fundamental solution for shortening the wire connecting the gate terminal and the input matching circuit while the source terminal of the power transistor is grounded is expected.

  In view of the above circumstances, the present invention realizes a low-impedance input matching circuit and reduces mounting variation in a high-power amplifier using a large-sized power transistor that operates in a high-frequency region from the X band to the Ku band. An object of the present invention is to provide a high-power amplifier that can be used.

  In order to achieve the above object, a high-power amplifier according to a first aspect of the present invention is a high-power amplifier including a transistor in which a plurality of source terminals and gate terminals are alternately arranged, and an input matching circuit of the transistor. In the input matching circuit, a via that is connected to the ground is provided at a position facing the source terminal of the transistor, a conductor as a signal line is provided at a position facing the gate terminal of the transistor, and the source terminal and the Connecting the via provided at a position facing the source terminal using a fine metal wire, and connecting the gate terminal and the conductor provided at a position facing the gate terminal using a fine metal wire; It is characterized by.

  A high-power amplifier according to a second aspect of the present invention is a high-power amplifier including a transistor in which a plurality of source terminals and gate terminals are alternately arranged, and an input matching circuit of the transistor, wherein the input matching circuit In the above, a conductor conducting to the ground is provided at a side surface position facing the source terminal of the transistor, a conductor as a signal line is provided at a position facing the gate terminal of the transistor, and the source terminal and the source terminal are opposed to the source terminal. The conductor provided in the side surface position is connected using a thin metal wire, and the gate terminal and the conductor provided in a position facing the gate terminal are connected using a thin metal wire.

  The high power amplifier according to a third aspect of the present invention is the high power amplifier according to the first or second aspect, wherein the input matching circuit includes a first matching circuit and a second matching circuit. The substrate constituting the matching circuit has a dielectric constant lower than that of the substrate constituting the first matching circuit.

The high-power amplifier according to a fourth aspect of the present invention is characterized in that, in the third aspect, the second matching circuit is provided on the transistor side.
In the high-power amplifier according to the fifth aspect of the present invention, in the third or fourth aspect, the substrate constituting the first matching circuit is a ceramic substrate, and the second matching circuit is constituted. The substrate to be performed is any one of resin substrates including a Teflon (registered trademark) substrate.

  According to the high-power amplifier according to each of the above embodiments, the source terminal of the transistor is grounded to the ground through the fine metal wire and the via. Therefore, the source terminal is grounded between the transistor and the input matching circuit. Spatial space necessary for down-turning the fine metal wire for grounding is not required, and the fine metal wire connecting the gate terminal of the transistor and the conductor as the signal line of the input matching circuit can be shortened.

  According to the present invention, since the gate wire (metal thin wire) connecting the gate terminal of the transistor and the conductor as the signal line in the input matching circuit can be shortened, the parasitic inductance can be reduced. Therefore, even when a high-power amplifier is configured using a large-sized power transistor that operates in a high-frequency region from the X band to the Ku band, a low-impedance input matching circuit can be realized and mounting variations can be reduced. it can.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 is a diagram illustrating a configuration of a high-power amplifier according to a first embodiment of the present invention.
As shown in the figure, the high-power amplifier according to this embodiment includes a power transistor 1 and an input matching circuit 2 and an output matching circuit 3 as its input / output matching circuit.

  The power transistor 1 is provided on a substrate 4, and a plurality of source terminals (see “S” in the figure) and gate terminals (see “G” in the figure) are alternately arranged on one side and a drain on the other side. A plurality of terminals (see “D” in the figure) are arranged.

  As the power transistor 1, for example, LDMOS (Laterally Diffused Metal Oxide Semiconductor), CMOS (Complementary Metal Oxide Semiconductor), InP-HEMT (High Electron Mobility Trasistor), InP-HBT (Heterojunction Bipolar Transistor), GaN-HEMT, Alternatively, a field effect transistor such as SiC-HEMT can be applied.

  The input matching circuit 2 is configured such that a conductor 6 as a signal line (transmission line) is provided on a ceramic substrate 5, and a conductor 7 that is grounded to the ground is provided on the bottom surface of the ceramic substrate 5.

  However, in the input matching circuit 2, vias 8 connected to the conductors 7 grounded to the ground are provided at positions facing the respective source terminals of the power transistor 1, and at positions facing the respective gate terminals of the power transistor 1. A conductor 6 as a signal line is arranged. At this time, the center distance between the adjacent source terminal and gate terminal of the power transistor 1 and the center distance between the adjacent via 8 and the conductor 6 of the input matching circuit 2 are configured to be the same. . A partial cross section of the input matching circuit 2 in the vicinity of the via 8 provided at a position facing the source terminal of the power transistor 1 is shown in a frame 9 on the lower right side of FIG. As shown in this figure, a via 8 is provided at that position and is connected to a conductor 7 grounded to the ground. To be exact, for each via 8, a conductor 8a electrically connected to the via 8 is also provided on the ceramic substrate 5. However, in this specification, the via 8 includes the conductor 8a.

  The source terminals of the power transistor 1 and the vias 8 facing the source terminals are connected by source wires (thin metal wires) 12, and the gate wires 13 are connected between the gate terminals and the conductor 6 facing the source terminals. Connected by

  In the output matching circuit 3, a conductor 11 as a signal line is provided on a ceramic substrate 10 such as alumina or aluminum nitride, and a conductor (not shown) grounded to the ground is provided on the bottom surface of the ceramic substrate 10. Each drain terminal of the power transistor 1 and the conductor 11 are connected by a drain wire 14.

  From the relationship of input / output impedance of the power transistor 1, the ceramic substrate 5 of the input matching circuit 2 is configured to have a higher dielectric constant than the ceramic substrate 10 of the output matching circuit 3.

  With the configuration described above, the source terminal of the power transistor 1 is grounded to the ground through the source wire 12 and the via 8 of the input matching circuit 2. In this case, a space for dropping the bonding wire is not required, and the distance therebetween (see “D2” in FIG. 1) can be shortened. Therefore, the length of the gate wire 13 connecting the gate terminal of the power transistor 1 and the conductor 6 as the signal line of the input matching circuit 2 can be shortened while the source terminal of the power transistor 1 is grounded.

  Here, an equivalent circuit of the high-power amplifier according to the present embodiment is shown in FIG. As shown in the figure, when the length of the gate wire is shortened, the parasitic inductance L2 can be reduced, so that the input impedance of the power transistor 1 can be reduced, and the input matching circuit 2 having an extremely small characteristic impedance can be obtained. Can be realized. Therefore, a large-sized power transistor can be used, and a large output of 10 W or more can be realized. In FIG. 2, Z0 is the input impedance of the input matching circuit 2, and Zlow is the input impedance of the power transistor 1.

  Also, the frequency characteristics of Zlow (real part and imaginary part) in each of the conventional high output amplifier (see FIGS. 9 and 10) and the high output amplifier according to the present embodiment are shown in FIG. It is shown in a) and (b). In the high-power amplifier according to the present embodiment, the parasitic inductance of the gate wire 13 (see “L2” in FIG. 2) can be reduced. Therefore, as shown in FIGS. Compared to the above, Zlow of the imaginary part decreases and the slope of Zlow of the imaginary part becomes gentle, making it easy to match to 50Ω and further widening the frequency band to be handled.

  Next, the difference in frequency characteristics at the time of matching between the case where the high-power amplifier according to the present embodiment is realized and the conventional high-power amplifier (see FIG. 9) is realized using 0.5 μm GaN-HEMT. To do. Here, it is assumed that the gate wire length in the high-power amplifier according to the present embodiment is 1/3 of the gate wire length in the conventional high-power amplifier.

  4 (a) and 4 (b) are diagrams showing frequency characteristics at the time of matching when a conventional high-power amplifier is realized using 0.5 μm GaN-HEMT. FIG. 5 is a diagram showing frequency characteristics at the time of matching when the high-power amplifier according to the present embodiment is realized using 0.5 μm GaN-HEMT. 2A and 2C show the frequency characteristics related to S21 (S21, forward transmission coefficient), and FIGS. 2B and 2D show the frequency characteristics related to S11 (S11, input reflection coefficient). Is shown. In each of (a), (b), (d), and (d), the gate wire length varies by -25%, 0%, and + 25% (hereinafter simply referred to as “± 25%”). Each frequency characteristic is shown.

  As shown in FIGS. 4A and 4B, the conventional high-power amplifier has a longer gate wire length and a larger parasitic inductance (see “L1” in FIG. 10) than the high-power amplifier according to this embodiment. Therefore, the variation in the frequency characteristics of S21 and S11 is large with respect to the variation in the gate wire length of ± 25%.

  On the other hand, as shown in FIGS. 3C and 3D, the high-power amplifier according to the present embodiment has a shorter gate wire length than the conventional high-power amplifier, and the parasitic inductance (“L2” in FIG. 2). Since the ratio of the gate wire length is small, the variation in the frequency characteristics of S21 and S11 is small with respect to the variation in the gate wire length of ± 25%. Also, as shown in (a) and (c) of the figure, the gain (S) at a frequency of 9.5 GHz (see “m5” in (a) and (c) of the figure) at a gate wire length of −25%. As (2, 1)), the conventional high-power amplifier obtains 5.062 dB, whereas the high-power amplifier according to the present embodiment obtains 10.87 dB higher than that.

  As described above, in the high-power amplifier according to this embodiment, the parasitic inductance can be reduced by shortening the gate wire length as compared with the conventional one. Therefore, the variation in the frequency characteristics of S21 and S11 with respect to the variation in the gate wire length. Can be reduced.

  As described above, according to the high-power amplifier according to this embodiment, the gate wire 13 that connects the gate terminal of the power transistor 1 and the conductor 6 as the signal line of the input matching circuit 2 can be shortened. L2 can be reduced, and for example, a low impedance input matching circuit can be realized in a high frequency region from the X band to the Ku band. As a result, a high-power amplifier having an output of 10 W or more can be provided by using a large-sized power transistor. In addition, since the proportion of the parasitic inductor in the input matching circuit is reduced, mounting variation can be reduced.

  Although not described in this embodiment, in actual use, the high-power amplifier according to this embodiment is housed in a metal package as shown in FIG. used.

  In the high-power amplifier according to the first embodiment described above, when a high dielectric constant substrate is used as a substrate constituting the input matching circuit, its use is advantageous for realizing a low-impedance input matching circuit. There is a problem that rotation occurs. For example, when a substrate having a dielectric constant of 100 is used, one wavelength is 3 mm at 10 GHz. In this case, if an input matching circuit having a length of 2 mm is considered, the phase difference between the two ends becomes more than a half cycle. On the other hand, when a substrate having a dielectric constant of about 4 is used, one wavelength is about 15 mm at 10 GHz. In this case, similarly, when considering an input matching circuit having a length of 2 mm, the phase difference at both ends thereof is suppressed to about 1/8 cycle.

  Therefore, in the high-power amplifier according to the second embodiment of the present invention, in order to realize an input matching circuit with low impedance and suppressed phase rotation, a high-dielectric constant substrate and a low dielectric constant are used as substrates constituting the input matching circuit. Rate substrate.

FIG. 5 is a diagram illustrating the configuration of the high-power amplifier according to the present embodiment.
As shown in the figure, in this embodiment, the input matching circuit 21 includes a first matching circuit 21a and a second matching circuit 21b.

  In the first matching circuit 21a, a conductor 23a as a signal line (transmission line) is provided on a substrate 22a having a high dielectric constant, and a conductor (not shown) grounded to the ground is provided on the bottom surface of the substrate 22a. Configured.

  The second matching circuit 21b is provided with a conductor 23b as a signal line (transmission line) on a substrate 22b having a dielectric constant lower than that of the substrate 22a of the first matching circuit 21a. A conductor 24 to be grounded is provided.

The high dielectric constant substrate 22a is, for example, a ceramic substrate, and the low dielectric constant substrate 22b is, for example, a resin substrate such as Teflon (registered trademark).
The conductor 23a as the signal line of the first matching circuit 21a and the conductor 23b as the signal line of the second matching circuit 21b are connected by a wire (metal thin wire) 25.

Other configurations are the same as those of the high-output amplifier according to the first embodiment (see FIG. 1).
As described above, according to the high-power amplifier according to the present embodiment, the same effects as those of the first embodiment can be obtained, and an input matching circuit with low impedance and suppressed phase rotation can be realized.

  In the present embodiment, the substrate 22a of the second matching circuit 21b and the substrate 10 of the output matching circuit 3 can be configured to have the same dielectric constant.

In the high power amplifier according to the third embodiment of the present invention, the conductor provided on the side surface is used instead of the via in the input matching circuit of the high power amplifier according to the first embodiment described above.
FIG. 6 is a diagram illustrating the configuration of the high-power amplifier according to the present embodiment.

  As shown in the figure, in the present embodiment, the via 8 is not provided in the input matching circuit 2, and instead, on the side of the input matching circuit 1 facing each source terminal of the power transistor 1, A conductor 31 is provided in conduction with the conductor 7 grounded to the ground. At this time, the center distance between the adjacent source terminal and the gate terminal in the power transistor 1 and the center distance between the adjacent conductor 31 and the conductor 6 in the input matching circuit 2 are configured to be the same. . A partial cross section of the input matching circuit 2 in the vicinity of the conductor 31 provided on the side surface of the input matching circuit 2 facing the source terminal of the power transistor 1 is shown in a frame 32 on the lower right side of FIG. As shown in this figure, a conductor 31 that is conductive to a conductor 7 that is grounded to the ground is provided on the side surface. To be precise, a conductor 31a electrically connected to the conductor 31 is also provided for each conductor 31 on the ceramic substrate 5. However, in this specification, the conductor 31a is also included.

The source wires 13 connect the source terminals of the power transistor 1 and the conductors 31 facing the source terminals.
Other configurations are the same as those of the high-output amplifier according to the first embodiment (see FIG. 1).

As described above, the same effect as that of the first embodiment can also be obtained by the high-power amplifier according to the present embodiment.
In the present embodiment, in the high output amplifier according to the first embodiment, the conductor 31 that conducts to the ground is provided on the side surface of the input matching circuit 2 instead of the via 8. A high power amplifier can be similarly configured.

  Although the present invention has been described in detail above, the present invention is not limited to the above-described embodiment, and it is needless to say that various improvements and changes may be made without departing from the gist of the present invention.

(Appendix 1)
A high-power amplifier including a transistor in which a plurality of source terminals and gate terminals are alternately arranged, and an input matching circuit of the transistor,
In the input matching circuit, a via that is connected to the ground is provided at a position facing the source terminal of the transistor, and a conductor as a signal line is provided at a position facing the gate terminal of the transistor,
The source terminal and the via provided at a position facing the source terminal are connected using a thin metal wire, and the gate terminal and the conductor provided at a position facing the gate terminal are used using a thin metal wire. Connect
A high-power amplifier characterized by that.

(Appendix 2)
The distance between the centers of the adjacent source terminal and the gate terminal and the distance between the centers of the adjacent via and the conductor are the same.
The high-power amplifier according to appendix 1, wherein

(Appendix 3)
A high-power amplifier including a transistor in which a plurality of source terminals and gate terminals are alternately arranged, and an input matching circuit of the transistor,
In the input matching circuit, a conductor conducting to the ground is provided at a side surface position facing the source terminal of the transistor, and a conductor as a signal line is provided at a position facing the gate terminal of the transistor,
The source terminal and the conductor provided at the side surface facing the source terminal are connected using a thin metal wire, and the gate terminal and the conductor provided at the position facing the gate terminal are connected with the metal thin wire. Connect using
A high-power amplifier characterized by that.

(Appendix 4)
The center-to-center distance between the adjacent source terminal and the gate terminal, and the center distance between the conductor conducting to the adjacent ground and the signal line conductor are the same.
The high-output amplifier according to appendix 3, wherein

(Appendix 5)
The input matching circuit includes a first matching circuit and a second matching circuit, and a substrate constituting the second matching circuit has a dielectric constant lower than that of a substrate constituting the first matching circuit.
The high-output amplifier according to any one of appendices 1 to 4, characterized in that:

(Appendix 6)
The second matching circuit is provided on the transistor side;
The high-output amplifier according to appendix 5, wherein

(Appendix 7)
The substrate constituting the first matching circuit is a ceramic substrate, and the substrate constituting the second matching circuit is one of resin substrates including a Teflon (registered trademark) substrate,
The high-output amplifier according to appendix 5 or 6, characterized by the above.

(Appendix 8)
The transistor is one of field effect transistors including LDMOS, CMOS, InP-HEMT, InP-HBT, GaN-HEMT, SiC-HEMT,
The high-output amplifier according to any one of appendices 1 to 7, wherein

1 is a diagram illustrating a configuration of a high-power amplifier according to Embodiment 1. FIG. FIG. 3 is a diagram illustrating an equivalent circuit of the high-power amplifier according to the first embodiment. (a), (b) is a figure which shows the frequency characteristic of Zlow (Real part (Real part) and Real part (Imaginary part)) in each of the conventional high output amplifier which concerns on a present Example. (a), (b) are diagrams showing frequency characteristics during matching when a conventional high-power amplifier is realized using 0.5 μm GaN-HEMT, and (c), (d) are 0.5 μm GaN-HEMT. FIG. 6 is a diagram illustrating frequency characteristics at the time of matching when the high-output amplifier according to the first embodiment is implemented using the synthesizer. FIG. 6 is a diagram illustrating a configuration of a high-power amplifier according to a second embodiment. FIG. 6 is a diagram illustrating a configuration of a high-power amplifier according to a third embodiment. It is a top view of the conventional high output amplifier accommodated in the metal package. It is a figure which shows the upper surface of a metal package single-piece | unit, a side surface, and an AA 'cross section. It is a figure which shows the upper surface of the conventional high output amplifier single-piece | unit, a side surface, and a BB 'cross section. It is a figure which shows the equivalent circuit of the conventional high output amplifier.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Power transistor 2 Input matching circuit 3 Output matching circuit 4 Substrate 5 Ceramic substrate 6, 7 Conductor 8 Via 8a Conductor 9 Frame 10 Ceramic substrate 11 Conductor 12 Source wire 13 Gate wire 14 Drain wire 21 Input matching circuit 21a 1st matching circuit 21b Second matching circuit 22a, 22b Substrate 23a, 23b, 24 Conductor 25 Wire 31, 31a Conductor 32 Frame 101 High power amplifier 102 Metal package 103, 104, 105, 106 Conductor 107, 108 Bottom metal plate 109 Metal wall 110, 111 Ceramic Substrate 112 Power Transistor 113 Input Matching Circuit 114 Output Matching Circuit 115 Substrate 116 Conductor 117 Ceramic Substrate 118 Conductor 119 Ceramic Substrate 120 Conductor 121 Gate Wire 122 Source Y 123 drain wire 125 wire

Claims (5)

A high-power amplifier including a transistor in which a plurality of source terminals and gate terminals are alternately arranged, and an input matching circuit of the transistor,
In the input matching circuit, a via that is connected to the ground is provided at a position facing the source terminal of the transistor, and a conductor as a signal line is provided at a position facing the gate terminal of the transistor,
The source terminal and the via provided at a position facing the source terminal are connected using a thin metal wire, and the gate terminal and the conductor provided at a position facing the gate terminal are used using a thin metal wire. Connect
A high-power amplifier characterized by that. A high-power amplifier including a transistor in which a plurality of source terminals and gate terminals are alternately arranged, and an input matching circuit of the transistor,
In the input matching circuit, a conductor conducting to the ground is provided at a side surface position facing the source terminal of the transistor, and a conductor as a signal line is provided at a position facing the gate terminal of the transistor,
The source terminal and the conductor provided at the side surface facing the source terminal are connected using a thin metal wire, and the gate terminal and the conductor provided at the position facing the gate terminal are connected with the metal thin wire. Connect using
A high-power amplifier characterized by that. The input matching circuit includes a first matching circuit and a second matching circuit, and a substrate constituting the second matching circuit has a dielectric constant lower than that of a substrate constituting the first matching circuit.
The high-power amplifier according to claim 1 or 2, The second matching circuit is provided on the transistor side;
The high-power amplifier according to claim 3. The substrate constituting the first matching circuit is a ceramic substrate, and the substrate constituting the second matching circuit is any one of resin substrates including a Teflon substrate.
The high-power amplifier according to claim 3 or 4,