JP2007266384A - Mold for imprinting and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve grace of a transfer pattern by enhancing mold releasability in an imprinting method. <P>SOLUTION: In the imprinting method after depositing a carbon film on the pattern front surface of a mold wherein an uneven pattern is formed, a release layer is formed by fluorine plasma processing. Otherwise, after depositing a carbon film on the compression-bonding side of a mold support substrate and forming an uneven pattern in this carbon film, a release layer is formed by fluorine plasma processing. Consequently, it is made possible to attain the reduction in resin pattern destruction or defects, as well as improvement of the mold for long life so that both of good transfer pattern formation in the imprinting method and substantial cost reduction may be expectable. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention is applied to the manufacturing process of various products such as semiconductor devices, optical components such as optical waveguides and diffraction gratings, recording devices such as hard disks and DVDs, biochips such as DNA analysis, and displays such as diffusion plates and light guide plates. The present invention relates to an imprint mold that can be used for pattern formation using a printing method and a method for manufacturing the same.

<Background Technology 1: Photolithography>
Conventionally, a method of optically transferring a pattern has been used to form a pattern that requires fine processing, such as a semiconductor device manufacturing process.
As an example, a photomask having a pattern made of an opaque material such as chromium formed on a part of a transparent substrate such as glass is prepared, and this is directly applied on a semiconductor substrate (hereinafter referred to as a sensitive substrate) coated with a resist. Alternatively, the pattern of the photomask is transferred to the sensitive substrate by placing it indirectly or by irradiating light from the back surface of the photomask to selectively expose the resist in the light transmitting portion. This technique is generally called a photolithography method.
Further, in the current semiconductor device manufacturing process, a method of optically reducing a mask pattern and transferring the pattern onto a semiconductor substrate has become mainstream.

However, in these pattern forming methods, the size and shape of the pattern to be formed greatly depend on the wavelength of light to be exposed. For example, in the manufacture of advanced semiconductor devices in recent years, the exposure wavelength used for photolithography is 150 nm or more, while the minimum line width is 65 nm or less, reaching the resolution limit due to the light diffraction phenomenon.
In order to increase the resolution of the resist, super-resolution technology such as proximity effect correction (OPC), phase shift mask, and modified illumination is used, but the mask pattern is faithfully transferred onto the semiconductor substrate. It has become difficult to do.

  Furthermore, in the case of reduced projection exposure, alignment accuracy is required not only in the horizontal direction of the substrate but also in the vertical direction, so precise stage control (X, Y, Z, θ) of the photomask and semiconductor substrate is necessary. Therefore, there has been a drawback that the cost of the apparatus becomes high.

  In addition to the manufacture of semiconductor devices, as long as photolithography is used in various pattern formations such as displays, recording media, biochips, optical devices, etc. The problem of the required apparatus cost similarly exists, and the mask pattern cannot be faithfully transferred.

<Background Technology 2: Thermal Imprint>
Against this background, SYChou et al. Proposed a technique called imprint method (or nanoimprint method) that is very simple but suitable for mass production and can transfer a much finer pattern faithfully than conventional methods. (See Non-Patent Documents 1 and 2, for example).
Although there is no strict distinction between the imprint method and the nanoimprint method, the nanometer-order method used for manufacturing semiconductor devices and diffraction gratings is called the nanoimprint method, and other micrometer-order methods are imprinted. Often called the law. Hereinafter, all are referred to as an imprint method.

Next, a conventional imprint method proposed by SYChou et al. Will be described with reference to FIGS.
First, a silicon substrate 101 having a silicon oxide film 102 formed on the surface is prepared, and the silicon oxide film 102 on the silicon substrate 101 is finally converted into a negative / positive reversal image of a pattern to be transferred to a transfer target such as a semiconductor substrate. A corresponding pattern is formed. For patterning the silicon oxide film 102, for example, a normal electron beam lithography technique can be used. In this way, a mold 100 having irregularities corresponding to a negative / positive reversal image of a pattern to be transferred onto the surface of a semiconductor substrate or the like is formed (FIG. 6A).

Next, a thermoplastic resist material such as PMMA is applied on the silicon substrate 111 on which a pattern is to be formed, thereby forming a resist layer 112 (FIG. 6B). Next, the silicon substrate 111 on which the resist layer 112 is formed is heated to a temperature equal to or higher than the glass transition temperature (Tg) of the resist (about 120 to 200 ° C.) to soften the resist layer 112.
Next, the mold 100 and the silicon substrate 111 are overlapped so that the uneven surface side of the mold faces the coated surface side of the resist layer of the silicon substrate 111 and pressure-bonded with a pressure of about 5 to 20 MPa (FIG. 6C). .
Next, in a state where the mold 100 is pressure-bonded to the silicon substrate 111, the temperature is lowered to a glass transition temperature or lower (about 100 ° C. or lower) of the resist to cure the resist layer 112, and the mold is detached. As a result, a pattern corresponding to the concavo-convex pattern of the mold 100 is formed on the resist layer 112 on the silicon substrate 111 (FIG. 6D).
Next, since a portion corresponding to the convex portion of the mold 100 remains as a thin residual film on the silicon substrate 111, this is removed by O ₂ RIE (reactive ion etching using oxygen gas) (FIG. 6 (e)). )).

In this way, a resist pattern is formed using the imprint method.
This method is called a thermal imprint method or a thermal nanoimprint method because it involves a thermal cycle of temperature rise and cooling.

<Thermal Imprint: Issues>
However, the conventional pattern formation method using the thermal imprint method has problems to be solved in terms of overlay position accuracy, mold strength and durability. That is, as described above, the pattern forming method using the imprint method requires an extremely high pressure of about 5 to 15 MPa when the mold and the substrate are pressure-bonded. It is extremely difficult to maintain the horizontal positional accuracy between the substrate and the substrate.
Further, when the number of times of transfer is increased at such a high pressure, there arises a problem that the mold is broken. Furthermore, since it involves a thermal cycle, the positional accuracy deteriorates due to the difference in thermal expansion coefficient between the substrate to be transferred and the mold material, and there arises a problem that the processing time is long for temperature rise and cooling. That is, it can be said that the fundamental problem of thermal imprinting is two points of high press pressure and high temperature.

<Background Technology 3: Optical Imprint>
In order to solve such a problem, a pattern forming method by an imprint method as described below has been proposed (for example, see Patent Document 1).
Specifically, as shown in FIG. 7A, a mold 120 having a concavo-convex shape on the surface is produced by etching a substrate made of a light-transmitting material such as quartz with an electron beam lithography method or the like. Next, as shown in FIG. 7 (b), a low-viscosity liquid photocurable resin composition (resist 112) to be transferred is applied on the silicon substrate, and as shown in FIG. 7 (c). Next, the mold 120 is pressure-bonded to the photocurable resin composition (resist 112). The pressing pressure at this time may be as small as about 0.01 to 5 MPa. In this state, light is irradiated from the back surface of the mold 120 to cure the photocurable resin composition (resist 112). As shown in FIG. 7D, the thin residual film of the photocurable resin (resist 112) to which the pattern of the mold 120 has been transferred is removed by the O ₂ RIE method or the like. Thereby, as shown in FIG.7 (e), the resin pattern is obtained.

According to this method, since the resin is cured by a photoreaction, there is no thermal cycle (room temperature is sufficient), the processing time can be greatly shortened, and the positional accuracy is not degraded by the thermal cycle. Moreover, since the photocurable resin composition is a liquid having a low viscosity, the pattern can be transferred without pressing the mold to the photocurable resin composition with a high pressure as in thermal imprinting.
Therefore, a decrease in positional accuracy and mold damage due to the press pressure are dramatically reduced. That is, optical imprinting can be said to be a technology that solves the high pressing pressure and high temperature that are the fundamental problems of thermal imprinting.
However, compared to the thermoplastic resin used for thermal imprinting, the photo-curable resin used for optical imprinting is less expensive and less expensive, so it can be used according to the application and product. It is necessary to use imprint and optical imprint properly.

<Background Technology 4: Imprint Release Technology (Wet)>
In these imprint methods (Background Technology 2 and Background Technology 3), the releasability between the mold and a resin pattern such as a resist formed on the substrate is extremely important. In imprinting, when the mold and the resin are separated after pressing, a phenomenon in which the resin is partially deformed or peeled off with the mold due to adhesion and friction between the mold and the resin is observed. FIG. 8 shows this state, and all or part of the resin resist 132 remains on the mold 130 side, and an appropriate pattern is not formed on the silicon substrate 131 (FIGS. 8B to 8D). This is because the surface energy of the mold or resin is large (= weak hydrophobicity = small contact angle).

Therefore, in order to avoid such separation of the substrate and the resin, it is necessary to form a fluoropolymer having a small surface energy on the mold surface as a release agent to improve the releasability between the mold and the resin on the substrate (for example, non Patent Documents 2 and 3 and Patent Document 2). FIG. 9 shows the method. As a general release agent, a silane coupling agent solution is allowed to act on the OH group of the silicon oxide film on the mold surface to form a film with a low surface energy (called a release layer) on the mold surface. is doing.
In FIG. 9, first, the mold 140 is immersed in a fluororesin-containing silane coupling solution 143 for several minutes using a mold release agent (FIG. 9B), and then an atmosphere having a temperature of 30 to 150 ° C. and a humidity of 85% or more (constant temperature and constant temperature). The reaction between the mold and the release agent proceeds by leaving it in the wet chamber 144) for about 10 minutes to 1 day (FIG. 9C). Finally, by rinsing with a fluorine-based inert solvent, alcohol, purified water, or the like, a mold 146 having a release layer 145 chemically bonded to the surface can be obtained (FIG. 9D). This release layer can reduce the adhesive force between the mold and the resin.

<Background Technology 5: Imprint Release Technology (Dry)>
Further, as a release processing method different from the background art 4, a method of forming a release layer on the mold surface by plasma processing of the mold has been proposed (see, for example, Patent Document 3). FIG. 10 illustrates this method. According to this, in the vacuum chamber 153, plasma 154 is generated using F atomic gas such as CHF ₃ , C ₃ F ₈ , CH ₂ F ₂ , CH ₃ F as a raw material, and the mold 150 is placed therein. (FIG. 10 (b)), a mold 156 having a release layer (surface treatment layer) 155 containing fluorine atoms on the surface can be obtained (FIG. 10 (c)). According to this method, the mold release property of the mold and the resin is better than the release treatment method of Background Art 4.

<Background Technology 6>
On the other hand, in order to improve mold releasability, a mold is disclosed in which the surface layer of the mold is made of a material containing silicon. Furthermore, in order to improve the steel properties of the mold, a mold is shown in which the material containing silicon, for example, the material of the mold body having a surface layer made of silicon, silicon carbide, or silicon oxide is made of a material containing diamond ( For example, see Patent Document 4).

However, in such a mold, silicon and its compounds are suitable as a release layer, but they are all naturally oxidized in the air, that is, oxygen is chemisorbed on the mold surface layer, so that it is hydrophobic. That is, it is not possible to obtain sufficient release properties. In addition, although it is stated that diamond is used for the mold body, a surface layer made of silicon and a silicon compound is indispensable in order to increase the releasability. Not mentioned.
JP 2000-194142 A JP 2002-283354 A JP 2003-77807 A JP 2004-311713 A Appl.Phys.Lett., Vol.67, p.3314 (1995) A thorough explanation of nanoimprint technology Electric Journal Published November 22, 2004 P20-38 J. Photopolym. Sci. Technol., Vol.14 (2001) pp.457-462 J. Taniguchi et al. JJAP Vol. 41 (2002) pp. 41944197, Measurement of Adhesive Force Between Mold and Photocurable Resin in Imprint Technology

However, even if a release layer is formed on the mold surface by the methods as described in Background Art 4 and 5, there is a problem that this release layer has low durability.
For this reason, when imprinting is repeatedly performed, the release layer is gradually peeled off from the mold surface, and the mold release property between the mold and the resin is lowered. Specifically, although depending on imprint conditions such as thermal imprint and optical imprint, generally, mold releasability between the mold and the resin is lowered after about 10 to 100 times, and the resin adheres to the mold.
Such adhesion of the resin becomes a defect of the transfer pattern, and a transfer pattern faithful to the mold pattern cannot be obtained. Moreover, since the mold with the resin filled in the pattern groove becomes a defect in the mold pattern, it cannot be repeatedly used for imprinting thereafter (for example, see Non-Patent Document 4).

  An object of the present invention is to form a highly durable release layer on a mold used in an imprint method, and to perform the imprint transfer repeatedly so that adhesion of the resin to the mold does not occur and a method for producing the same Is to provide.

In order to achieve the above-mentioned object, the imprint mold of the present invention is an imprint mold having a surface layer on which a concavo-convex pattern is formed and transferring the concavo-convex pattern shape to a transfer object by an imprint method. The surface layer on which the uneven pattern is formed is made of an amorphous carbon film.
The imprint mold of the present invention is an imprint mold having a surface layer on which a concavo-convex pattern is formed, and transferring the concavo-convex pattern shape to a transfer object by an imprint method, on the mold support substrate. It has the laminated | stacked amorphous carbon film, The uneven | corrugated pattern is formed in the said amorphous carbon film, It is characterized by the above-mentioned.
In the imprint mold of the present invention, it is preferable that a release layer by fluorine plasma treatment is formed on the amorphous carbon film. The amorphous carbon film may be a diamond-like carbon (DLC) film.
The material of the mold support substrate may be a metal containing any of silicon, nickel, chromium, iron, tantalum, aluminum, and tungsten, or an oxide, nitride, or carbide thereof.

According to the imprint mold of the present invention and the manufacturing method thereof, the durability of the mold release layer is improved in the imprint method, so that the occurrence of adhesion of the resin to the mold is greatly increased even in repeated imprint processes. Can be suppressed. Furthermore, it is possible to greatly reduce the occurrence of mold pattern breakage due to resin adhesion.
Accordingly, it is possible to reduce transfer pattern defects and extend the life of the mold, and it can be expected that a good transfer pattern is formed and the cost is greatly reduced in the imprint method.

FIG. 1 is a cross-sectional view showing a method for manufacturing an imprint mold according to an embodiment of the present invention. As a first example, a method for forming a carbon thin film and performing a fluorine plasma treatment after pattern formation is shown.
First, a mold material 160 shown in FIG. 1A has a concavo-convex shape on the surface of a mold material using a metal such as silicon, nickel, chromium, iron, tantalum, and tungsten, and oxides, nitrides, and carbides thereof. A pattern is formed.
In FIG. 1B, an amorphous carbon film 161 is formed on the pattern surface of the mold material 160. Further, a release layer 163 is formed by further performing fluorine plasma treatment 162 (FIGS. 1C and 1D).

On the surface of the amorphous carbon film, oxygen atoms are not chemically adsorbed on the surface layer unlike silicon or metal and their compounds, and the wettability is low and the friction coefficient of the surface is very small. Therefore, it has the property that other substances that come into contact are difficult to be adsorbed.
Therefore, by forming an amorphous film mainly composed of carbon atoms on the surface of the mold material, a surface where oxygen atoms are not chemically adsorbed on the surface layer, such as silicon or metal and compounds thereof, can be obtained. It becomes possible to improve the durability of the release layer in imprinting. Here, it is known that the amorphous carbon film contains several tens of percent or more of hydrogen by the manufacturing method, but such a film is also defined as an amorphous carbon film.

  Also, by forming an amorphous film mainly composed of carbon atoms on the surface of the mold material, a surface where oxygen atoms are not chemically adsorbed on the surface layer, such as silicon or metal and their compounds, can be obtained. Since it is possible to obtain the oxide film on the surface and it is not necessary to remove the oxide film on the surface, the surface can be easily fluorinated and a stable surface can be obtained. Further, by forming carbon (C atoms) on the surface of the mold material, the adhesion with the release layer (F atoms) can be further increased, and the durability of the release layer in imprinting can be further improved. This is because the bond energy of C—F is much larger.

In this embodiment, since the surface to be treated with fluorine plasma may be an amorphous carbon film, an amorphous carbon film may be formed on the mold surface on which the mold pattern has been formed. Alternatively, after forming an amorphous carbon film, the amorphous carbon film may be patterned to form a mold pattern.
FIG. 2 shows an example of this. First, an amorphous carbon film 171 is formed on a mold support substrate 174 (FIG. 2A), and the amorphous carbon film 171 is patterned to form a surface pattern (FIG. 2B). Then, this is subjected to plasma treatment 172 to form a release layer 173 (FIGS. 2C and 2D).

In addition, if a diamond-like carbon (DLC) film with a relatively low hydrogen content and a high hardness is formed as an amorphous carbon film, the hardness of the mold pattern can be increased and the durability of the mold pattern itself is improved. Still better to do.

Examples according to the present invention will be described below.
In the present invention, the imprinting method and the molding material are not limited, but in this example, a Si mold for thermal imprinting was manufactured. First, the manufacturing method of the mold of a present Example is shown in FIG. A 4-inch silicon wafer was prepared as a substrate 181 as a mold base (FIG. 3A). This substrate was coated with an electron beam resist (ZEP520 / Nippon Zeon) 182 to a thickness of 200 nm (FIG. 3B), a line pattern of 100 to 400 nm was drawn with an electron beam drawing apparatus, and then a resist pattern was formed by organic development. (FIG. 3C). The conditions at this time were a drawing dose of 100 μC / cm ² and a development time of 2 minutes.

Next, a Si pattern having a depth of 50 nm was formed by Si dry etching using an ICP dry etching apparatus (FIG. 3D). The Si etching conditions were C ₄ F ₈ flow rate 30 sccm, O ₂ flow rate 30 sccm, Ar flow rate 50 sccm, pressure 2 Pa, ICP power 500 W, and RIE power 130 W.
Finally, the resist was peeled off by O ₂ plasma ashing (conditions: O ₂ flow rate 500 sccm, pressure 30 Pa, RF power 1000 W), and a Si mold 180 before forming a release layer was produced (FIG. 3E).

  Next, the steps of forming an amorphous carbon film and forming a release layer are shown in FIG. A diamond-like carbon (DLC) film 191 is formed as an amorphous carbon film on the surface of the Si mold 190 of FIG. 4A (= FIG. 3E) by plasma enhanced chemical vapor deposition (PECVD) (FIG. 4). (B)). The film forming conditions were methane 20 sccm, methane 13 sccm + nitrogen 6 sccm, or methane 13 sccm + ammonia 6 sccm, and the reaction pressure was 10 mTorr. Further, the substrate temperature during film formation was 150 ° C. or lower without substrate heating. The film thickness of this diamond-like carbon thin film was about 5 nm as measured with a transmission electron microscope (TEM).

Next, a release layer 193 was formed by fluorine plasma treatment 192 using an ICP dry etching apparatus (FIG. 4C). The plasma treatment conditions were CF4 gas 35 sccm, reaction pressure 30 mTorr, high frequency power 300 W, and treatment time 5 minutes.

Thereby, an Si mold 196 having a DLC film and a release layer (fluorine-terminated surface) 193 on the Si pattern was completed (FIG. 4D). When this surface structure was analyzed by X-ray photoelectron spectroscopy (XPS), a CF structure could be confirmed. Further, changes to the _{CF 4, C 2 F 6,} C 3 F 8, C 4 F 8, CHF 3, CH 2 F 2, CH 3 F, F 2, BF 3, NF 3, ClF 3, PF 3, It was also confirmed that a release layer could be formed even if any gas of SF ₆ or SiF ₄ or a mixed gas containing any of them was used.

  Next, a Si mold for thermal imprinting was produced by another method. The manufacturing method is shown in FIG. A 4-inch silicon wafer was prepared as the mold support substrate 204, and a DLC film 201 was formed on the surface of the Si wafer by plasma enhanced chemical vapor deposition (PECVD) (FIG. 5A). The film forming conditions were methane 20 sccm, methane 13 sccm + nitrogen 6 sccm, or methane 13 sccm + ammonia 6 sccm, and the reaction pressure was 10 mTorr. Further, the substrate temperature during film formation was 150 ° C. or lower without substrate heating. Finally, in order to pattern this DLC film, the film formation time was lengthened to increase the film thickness. When the film thickness was measured with a scanning electron microscope (SEM), it was about 60 nm.

Next, an electron beam resist (ZEP520 / Nippon Zeon) 207 was coated on the DLC film 201 to a thickness of 200 nm, a line pattern of 100 to 400 nm was drawn with an electron beam drawing apparatus, and a resist pattern was then formed by organic development ( FIG. 5B). The conditions at this time were a drawing dose of 100 μC / cm ² and a development time of 2 minutes.

Next, dry etching of the DLC film was performed using a reactive ion etching apparatus (RIE) to form a pattern with a depth of 50 nm. The etching conditions at this time were CF ₄ flow rate 5 sccm, O ₂ flow rate 50 sccm, pressure 1.3 Pa, ICP power 500 W, and RIE power 300 W. Finally, the resist was peeled off by O ₂ plasma ashing (conditions: O ₂ flow rate 500 sccm, pressure 30 Pa, RF power 1000 W), and the DLC mold 200 before forming the release layer was produced (FIG. 5C). Here, in order to obtain a higher selection ratio, an inorganic resist such as a silicon nitride film can be used as a hard mask as a resist layer.
At this time, in the O ₂ plasma ashing, the DLC film is not etched in order not to accelerate ions from the plasma (no RIE power is given).

Next, a release layer 203 was formed by fluorine plasma treatment (FIG. 5D) 202 using an ICP dry etching apparatus (FIG. 5E). The plasma treatment conditions were CF ₄ gas 35 sccm, reaction pressure 30 mTorr, high frequency power 300 W, and treatment time 5 minutes.

As a result, a DLC mold 206 having a patterned DLC film and a release layer (fluorine-terminated surface) 203 on the Si support substrate 204 was completed (FIG. 5F). When this surface structure was analyzed by X-ray photoelectron spectroscopy (XPS), a CF structure could be confirmed. Further, changes to the _{CF4, C 2 F 6, C} 3 F 8, C 4 F 8, CHF 3, CH 2 F 2, CH 3 F, F 2, BF 3, NF 3, ClF 3, PF 3, SF _6. It was also confirmed that a release layer could be formed using any one of the gases ₆ and SiF ₄ , or a mixed gas containing one of them.

  Thermal imprinting was repeated using the mold prepared in Example 1 of the present invention (two types, with and without fluorine treatment (FIG. 1 (d)) and without (FIG. 1 (b)), and the mold prepared in Example 2. This was carried out, and the mold releasability and mold pattern durability were examined. In addition, for comparison, Si mold immersed in fluorine-based surface treatment agent EGC-1720 (Sumitomo 3M) as a general mold release agent is used instead of fluorine plasma treatment. The durability of the mold pattern was examined.

  A silicon substrate was used as a transfer substrate to be imprinted, and a thermoplastic resin PMMA (polymethyl methacrylate) was coated on the silicon substrate to a thickness of 300 nm. The thermal imprinting conditions for one time were a substrate and mold heating temperature of 140 ° C., a press pressure of 15 MPa, a press holding time of 1 minute, and a substrate cooling temperature of 30 ° C.

  As a method for evaluating the deterioration of mold releasability, as a method for evaluating the durability of the mold pattern by repeating the thermal imprinting of this condition up to 200 times, examining the number of times the transfer pattern starts to adhere to the mold, The number of times mold destruction occurred was examined.

  The results are shown in FIG. In the general Si mold, the transfer pattern adheres to the resin mold by 40 to 60 thermal imprints, but in the mold of the present invention (Example 1 (no fluorine treatment)) 150 times or more. Furthermore, the molds according to the present invention (Example 1 (with fluorine treatment) and Example 2) did not adhere to the mold even after 200 thermal imprints. From this, it can be seen that there is almost no decrease in adhesion force in the mold of the present invention compared to a general Si mold.

  As for the destruction of the mold pattern, the general Si mold occurred at the 48th time, but the mold of the present invention did not cause the mold pattern destruction even when it was repeated 150 times or more or 200 times or more. From this, it can be seen that the mold of the present invention has better mold pattern durability than a general Si mold.

  In consideration of this result, it is considered that there is a considerable correlation between the mold release property and the durability of the mold pattern. In other words, in order to improve mold releasability, it is necessary not only to reduce the adhesion of the surface but also to increase the rigidity of the mold pattern. To increase the durability of the mold pattern, the rigidity of the mold pattern must be increased. In addition to increasing, it is considered necessary to reduce the adhesion of the surface.

It is sectional drawing which shows the manufacturing process of the mold by embodiment of this invention. It is sectional drawing which shows the manufacturing process of the mold by embodiment of this invention. It is sectional drawing which shows the manufacturing process of the mold by embodiment of this invention. It is sectional drawing which shows the manufacturing process of the mold by embodiment of this invention. It is sectional drawing which shows the manufacturing process of the mold by embodiment of this invention. It is sectional drawing which shows the manufacturing process of the mold by a prior art. It is sectional drawing which shows the manufacturing process of the mold by a prior art. It is sectional drawing which shows the manufacturing process of the mold by a prior art. It is sectional drawing which shows the manufacturing process of the mold by a prior art. It is sectional drawing which shows the manufacturing process of the mold by a prior art. It is explanatory drawing which compares and shows the measurement result of the mold release characteristic of the mold by the Example of this invention, and the mold by a prior art.

Explanation of symbols

  150, 160, 170, 180, 190, 200 ... mold, 153 ... vacuum chamber, 154, 162, 172, 192, 202 ... plasma, 155, 163, 173, 193, 203 ... release layer, 161 , 171, 191, 201, 214... Amorphous carbon film, 156, 166, 176, 196, 206... Mold subjected to mold release treatment, 174, 204.

Claims (5)

It has a surface layer on which a concavo-convex pattern is formed, and is an imprint mold for transferring the concavo-convex pattern shape to a transfer object by an imprint method,
The surface layer on which the uneven pattern is formed is an amorphous carbon film,
An imprint mold characterized by the above. It has a surface layer on which a concavo-convex pattern is formed, and is an imprint mold for transferring the concavo-convex pattern shape to a transfer object by an imprint method,
It has an amorphous carbon film laminated on a mold support substrate, and an uneven pattern is formed on the amorphous carbon film.
An imprint mold characterized by the above.   3. The imprint mold according to claim 1, wherein a release layer is formed on the amorphous carbon film by a fluorine plasma treatment.   The imprint mold according to claim 1, wherein the amorphous carbon film is a diamond-like carbon (DLC) film.   5. The material of the mold support substrate is a metal containing any one of silicon, nickel, chromium, iron, tantalum, aluminum, and tungsten, or oxides, nitrides, and carbides thereof. The mold for imprints of any one of these.

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