JP2007254759A5 - - Google Patents

Download PDF

Info

Publication number
JP2007254759A5
JP2007254759A5 JP2007165729A JP2007165729A JP2007254759A5 JP 2007254759 A5 JP2007254759 A5 JP 2007254759A5 JP 2007165729 A JP2007165729 A JP 2007165729A JP 2007165729 A JP2007165729 A JP 2007165729A JP 2007254759 A5 JP2007254759 A5 JP 2007254759A5
Authority
JP
Japan
Prior art keywords
sic
light
layer
concentration
phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007165729A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007254759A (ja
JP4303765B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007165729A priority Critical patent/JP4303765B2/ja
Priority claimed from JP2007165729A external-priority patent/JP4303765B2/ja
Publication of JP2007254759A publication Critical patent/JP2007254759A/ja
Publication of JP2007254759A5 publication Critical patent/JP2007254759A5/ja
Application granted granted Critical
Publication of JP4303765B2 publication Critical patent/JP4303765B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2007165729A 2003-11-28 2007-06-25 ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード Expired - Lifetime JP4303765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007165729A JP4303765B2 (ja) 2003-11-28 2007-06-25 ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003399992 2003-11-28
JP2007165729A JP4303765B2 (ja) 2003-11-28 2007-06-25 ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004087110A Division JP4153455B2 (ja) 2003-11-28 2004-03-24 蛍光体および発光ダイオード

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008277235A Division JP4303776B2 (ja) 2003-11-28 2008-10-28 ＳｉＣ半導体、半導体用基板、粉末及び発光ダイオード
JP2009027818A Division JP4961443B2 (ja) 2003-11-28 2009-02-09 発光ダイオード

Publications (3)

Publication Number Publication Date
JP2007254759A JP2007254759A (ja) 2007-10-04
JP2007254759A5 true JP2007254759A5 (enrdf_load_stackoverflow) 2008-12-11
JP4303765B2 JP4303765B2 (ja) 2009-07-29

Family

ID=38629287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007165729A Expired - Lifetime JP4303765B2 (ja) 2003-11-28 2007-06-25 ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード

Country Status (1)

Country Link
JP (1) JP4303765B2 (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
JP4153455B2 (ja) 蛍光体および発光ダイオード
US20070176531A1 (en) Phoshor and light-emitting diode
JP5628394B2 (ja) 蛍光体変換半導体発光デバイス
JP5432435B2 (ja) 蛍光体変換発光デバイス
TWI375710B (enrdf_load_stackoverflow)
EP2562231B1 (en) Luminescent material
EP2634234B1 (en) Light-emitting device
US9530927B2 (en) Light emitting devices with built-in chromaticity conversion and methods of manufacturing
JP5476531B2 (ja) 蛍光体結晶薄膜とその作製方法
US10131839B2 (en) Light emitting device
JP5946036B2 (ja) 発光装置
JP4961443B2 (ja) 発光ダイオード
JP6356573B2 (ja) 単結晶蛍光体及び発光装置
US9099597B2 (en) Light emitting diode element with porous SiC emitting by donor acceptor pair
US7709103B2 (en) Phosphor, manufacturing method thereof and light emitting device using the same
JP4303765B2 (ja) ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード
KR100833834B1 (ko) 형광체 및 발광 다이오드
JP2007254759A5 (enrdf_load_stackoverflow)
CN1946829B (zh) 磷光体
CN114787317B (zh) 复合波长转换器
GB2440695A (en) Phosphor and light-emitting diode