JP2007250060A5 - - Google Patents

Download PDF

Info

Publication number
JP2007250060A5
JP2007250060A5 JP2006070587A JP2006070587A JP2007250060A5 JP 2007250060 A5 JP2007250060 A5 JP 2007250060A5 JP 2006070587 A JP2006070587 A JP 2006070587A JP 2006070587 A JP2006070587 A JP 2006070587A JP 2007250060 A5 JP2007250060 A5 JP 2007250060A5
Authority
JP
Japan
Prior art keywords
memory cell
sub
cell array
selection switch
cell arrays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006070587A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007250060A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006070587A priority Critical patent/JP2007250060A/ja
Priority claimed from JP2006070587A external-priority patent/JP2007250060A/ja
Priority to US11/724,213 priority patent/US7529144B2/en
Publication of JP2007250060A publication Critical patent/JP2007250060A/ja
Publication of JP2007250060A5 publication Critical patent/JP2007250060A5/ja
Pending legal-status Critical Current

Links

JP2006070587A 2006-03-15 2006-03-15 半導体記憶装置 Pending JP2007250060A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006070587A JP2007250060A (ja) 2006-03-15 2006-03-15 半導体記憶装置
US11/724,213 US7529144B2 (en) 2006-03-15 2007-03-15 Hierarchical semiconductor memory device capable of carrying out a disturb refresh test on a memory array basis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006070587A JP2007250060A (ja) 2006-03-15 2006-03-15 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2007250060A JP2007250060A (ja) 2007-09-27
JP2007250060A5 true JP2007250060A5 (https=) 2009-03-19

Family

ID=38517657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006070587A Pending JP2007250060A (ja) 2006-03-15 2006-03-15 半導体記憶装置

Country Status (2)

Country Link
US (1) US7529144B2 (https=)
JP (1) JP2007250060A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI360880B (en) * 2008-06-10 2012-03-21 Promos Technologies Inc Leakage test method for dynamic random access memo
US8699255B2 (en) * 2012-04-01 2014-04-15 Nanya Technology Corp. Memory array with hierarchical bit line structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519659A (en) 1993-10-01 1996-05-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh test
KR0141432B1 (ko) 1993-10-01 1998-07-15 기다오까 다까시 반도체 기억장치
JP2001076500A (ja) * 1999-06-28 2001-03-23 Mitsubishi Electric Corp 半導体記憶装置
JP3415502B2 (ja) * 1999-07-30 2003-06-09 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JP3845051B2 (ja) * 2002-09-11 2006-11-15 株式会社東芝 不揮発性半導体メモリ
JP2005310303A (ja) * 2004-04-23 2005-11-04 Toshiba Corp 半導体記憶装置及びそのテスト方法

Similar Documents

Publication Publication Date Title
US7272070B2 (en) Memory access using multiple activated memory cell rows
JP2009545095A5 (https=)
KR101172460B1 (ko) 메모리 회로, 시스템 및 그 인터리빙 액세스 방법
TW200739587A (en) Nonvolatile semiconductor memory device
WO2007005891A3 (en) Micro-tile memory interfaces
JP2005182978A5 (https=)
JP2013114739A (ja) 半導体装置
TW200710661A (en) Memory controller interface for micro-tiled memory access
JP2007059026A5 (https=)
US8130541B2 (en) Phase change memory apparatus and test circuit therefor
TW201145303A (en) Reducing peak currents required for precharging data lines in memory devices
TWI650753B (zh) 可變電阻記憶體裝置及操作該可變電阻記憶體裝置的方法
JPH11339492A5 (https=)
JP2007280596A5 (https=)
JP2011018427A5 (https=)
US8139415B2 (en) Phase-change memory device
JP2000207891A5 (https=)
JP2009543269A5 (https=)
JPH1166874A5 (https=)
JP2013191256A (ja) 半導体装置
US7038957B2 (en) Semiconductor memory device for testifying over-driving quantity depending on position
JP2007250060A5 (https=)
JP4478982B2 (ja) 半導体記憶装置
JP2006048749A5 (https=)
JP2002529874A5 (https=)