JP2007201516A - 光放射デバイス - Google Patents
光放射デバイス Download PDFInfo
- Publication number
- JP2007201516A JP2007201516A JP2007126779A JP2007126779A JP2007201516A JP 2007201516 A JP2007201516 A JP 2007201516A JP 2007126779 A JP2007126779 A JP 2007126779A JP 2007126779 A JP2007126779 A JP 2007126779A JP 2007201516 A JP2007201516 A JP 2007201516A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- metal contact
- contact layer
- heterosubstrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000005219 brazing Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 230000005496 eutectics Effects 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 abstract description 8
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003631 wet chemical etching Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】少なくとも1つの活性層を含み、エピタキシャルに析出された多重層と、該多重層の裏側の上に形成された第1の金属コンタクト層と、ヘテロ基板の表側の上に形成された第2の金属コンタクト層と、第1の金属コンタクト層と第2の金属コンタクト層との間の電気的および機械的接触を生ずるろう層とを備え、ヘテロ基板はシリコンへテロ基板である。
【選択図】図3
Description
Claims (9)
- 少なくとも1つの活性層(3)を含み、エピタキシャルに析出された多重層(2、3、4、5)と、該多重層(2、3、4、5)の裏側(6)の上に形成された第1の金属コンタクト層(7)と、ヘテロ基板(9)の表側(8)の上に形成された第2の金属コンタクト層(10)と、第1の金属コンタクト層(7)と第2の金属コンタクト層(10)との間の電気的および機械的接触を生ずるろう層(11)とを備え、ヘテロ基板(9)はシリコンへテロ基板である
ことを特徴とする光放射デバイス。 - ろう層(11)が金を含有する、請求項1記載のデバイス。
- ろう層(11)がAuSnから成る、請求項2記載のデバイス。
- 第1の金属コンタクト層(7)と第2の金属コンタクト層(10)とが所期の構造となるように形成されている、請求項1記載のデバイス。
- 第1の金属コンタクト層(7)と第2の金属コンタクト層(10)とが共晶結合で互いに結合されている、請求項1記載のデバイス。
- ヘテロ基板(9)がGaPヘテロ基板である、請求項1記載のデバイス。
- ヘテロ基板(9)がガラスヘテロ基板である、請求項1記載のデバイス。
- 多重層(2,3,4,5)はヘテロ基板(9)に面していない表側にGaPから成る光出力層(5)を有し、該光出力層(5)上に所期の構造となるように形成された電極層(13)が被着されている、請求項1記載のデバイス。
- 光出力層(5)が10μm〜約50μmの厚さを有する、請求項1記載のデバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722156 | 1997-05-27 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006065668A Division JP2006196919A (ja) | 1997-05-27 | 2006-03-10 | 光放射デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007201516A true JP2007201516A (ja) | 2007-08-09 |
Family
ID=7830629
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50009199A Expired - Lifetime JP4020977B2 (ja) | 1997-05-27 | 1998-05-22 | 光放射デバイスの製造方法 |
JP2006065668A Pending JP2006196919A (ja) | 1997-05-27 | 2006-03-10 | 光放射デバイス |
JP2007126779A Pending JP2007201516A (ja) | 1997-05-27 | 2007-05-11 | 光放射デバイス |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50009199A Expired - Lifetime JP4020977B2 (ja) | 1997-05-27 | 1998-05-22 | 光放射デバイスの製造方法 |
JP2006065668A Pending JP2006196919A (ja) | 1997-05-27 | 2006-03-10 | 光放射デバイス |
Country Status (8)
Country | Link |
---|---|
US (1) | US6221683B1 (ja) |
EP (1) | EP0985235B1 (ja) |
JP (3) | JP4020977B2 (ja) |
KR (1) | KR100563853B1 (ja) |
DE (1) | DE59809873D1 (ja) |
RU (1) | RU2177189C2 (ja) |
TW (1) | TW393787B (ja) |
WO (1) | WO1998054764A1 (ja) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
DE10017337C2 (de) * | 2000-04-07 | 2002-04-04 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente |
US6903381B2 (en) * | 2003-04-24 | 2005-06-07 | Opto Tech Corporation | Light-emitting diode with cavity containing a filler |
DE102004016697B4 (de) * | 2004-02-27 | 2007-10-11 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Halbleiterchips umfassend ein Verbindungsverfahren, das Löten mit einem Lot umfasst, und Halbleiterchip |
US20060151801A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Light emitting diode with thermo-electric cooler |
US7195944B2 (en) * | 2005-01-11 | 2007-03-27 | Semileds Corporation | Systems and methods for producing white-light emitting diodes |
US7473936B2 (en) * | 2005-01-11 | 2009-01-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7897420B2 (en) * | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7186580B2 (en) * | 2005-01-11 | 2007-03-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
US8680534B2 (en) | 2005-01-11 | 2014-03-25 | Semileds Corporation | Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light |
US7378288B2 (en) * | 2005-01-11 | 2008-05-27 | Semileds Corporation | Systems and methods for producing light emitting diode array |
US8871547B2 (en) | 2005-01-11 | 2014-10-28 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate |
US9130114B2 (en) | 2005-01-11 | 2015-09-08 | SemiLEDs Optoelectronics Co., Ltd. | Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication |
US7646033B2 (en) * | 2005-01-11 | 2010-01-12 | Semileds Corporation | Systems and methods for producing white-light light emitting diodes |
US7432119B2 (en) * | 2005-01-11 | 2008-10-07 | Semileds Corporation | Light emitting diode with conducting metal substrate |
US8802465B2 (en) | 2005-01-11 | 2014-08-12 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
US7413918B2 (en) * | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
US20060154393A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Systems and methods for removing operating heat from a light emitting diode |
US7524686B2 (en) * | 2005-01-11 | 2009-04-28 | Semileds Corporation | Method of making light emitting diodes (LEDs) with improved light extraction by roughening |
US7563625B2 (en) * | 2005-01-11 | 2009-07-21 | SemiLEDs Optoelectronics Co., Ltd. | Method of making light-emitting diodes (LEDs) with improved light extraction by roughening |
US20060237735A1 (en) * | 2005-04-22 | 2006-10-26 | Jean-Yves Naulin | High-efficiency light extraction structures and methods for solid-state lighting |
KR20080106402A (ko) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Led로부터 광을 유도하기 위한 개별 광학 디바이스 |
TWI305960B (en) * | 2006-06-16 | 2009-02-01 | Opto Tech Corp | Light emitting diode and method manufacturing the same |
EP2070123A2 (en) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led system and method |
US8283683B2 (en) * | 2006-11-07 | 2012-10-09 | Opto Tech Corporation | Chip-bonding light emitting diode chip |
TWI324403B (en) * | 2006-11-07 | 2010-05-01 | Opto Tech Corp | Light emitting diode and method manufacturing the same |
ATE482478T1 (de) * | 2007-02-12 | 2010-10-15 | Koninkl Philips Electronics Nv | Leuchtdiode als lichtquelle mit grossflächiger lichtemission |
US20080303033A1 (en) * | 2007-06-05 | 2008-12-11 | Cree, Inc. | Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates |
KR20100122485A (ko) | 2008-02-08 | 2010-11-22 | 일루미텍스, 인크. | 발광체층 쉐이핑을 위한 시스템 및 방법 |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
JP2010267813A (ja) * | 2009-05-14 | 2010-11-25 | Toshiba Corp | 発光素子及びその製造方法 |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
CN111509103A (zh) * | 2011-06-01 | 2020-08-07 | 亮锐控股有限公司 | 键合到支撑衬底的发光器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6081884A (ja) * | 1983-10-11 | 1985-05-09 | Nec Corp | 半導体発光装置 |
JPH05251739A (ja) * | 1992-03-06 | 1993-09-28 | Toshiba Corp | 半導体発光デバイス |
JPH06302857A (ja) * | 1993-03-19 | 1994-10-28 | Hewlett Packard Co <Hp> | 発光ダイオードの製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3931631A (en) | 1973-07-23 | 1976-01-06 | Monsanto Company | Gallium phosphide light-emitting diodes |
US5103271A (en) * | 1989-09-28 | 1992-04-07 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of fabricating the same |
US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
-
1998
- 1998-05-22 WO PCT/DE1998/001412 patent/WO1998054764A1/de active IP Right Grant
- 1998-05-22 DE DE59809873T patent/DE59809873D1/de not_active Expired - Lifetime
- 1998-05-22 RU RU99126759/28A patent/RU2177189C2/ru not_active IP Right Cessation
- 1998-05-22 EP EP98934777A patent/EP0985235B1/de not_active Expired - Lifetime
- 1998-05-22 JP JP50009199A patent/JP4020977B2/ja not_active Expired - Lifetime
- 1998-05-22 KR KR1019997011064A patent/KR100563853B1/ko not_active IP Right Cessation
- 1998-05-25 TW TW087108060A patent/TW393787B/zh not_active IP Right Cessation
-
1999
- 1999-11-29 US US09/450,398 patent/US6221683B1/en not_active Expired - Lifetime
-
2006
- 2006-03-10 JP JP2006065668A patent/JP2006196919A/ja active Pending
-
2007
- 2007-05-11 JP JP2007126779A patent/JP2007201516A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6081884A (ja) * | 1983-10-11 | 1985-05-09 | Nec Corp | 半導体発光装置 |
JPH05251739A (ja) * | 1992-03-06 | 1993-09-28 | Toshiba Corp | 半導体発光デバイス |
JPH06302857A (ja) * | 1993-03-19 | 1994-10-28 | Hewlett Packard Co <Hp> | 発光ダイオードの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100563853B1 (ko) | 2006-03-24 |
EP0985235A1 (de) | 2000-03-15 |
EP0985235B1 (de) | 2003-10-08 |
JP4020977B2 (ja) | 2007-12-12 |
TW393787B (en) | 2000-06-11 |
US6221683B1 (en) | 2001-04-24 |
KR20010013085A (ko) | 2001-02-26 |
JP2002503391A (ja) | 2002-01-29 |
RU2177189C2 (ru) | 2001-12-20 |
WO1998054764A1 (de) | 1998-12-03 |
DE59809873D1 (de) | 2003-11-13 |
JP2006196919A (ja) | 2006-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4020977B2 (ja) | 光放射デバイスの製造方法 | |
US6818531B1 (en) | Method for manufacturing vertical GaN light emitting diodes | |
US6887770B2 (en) | Method for fabricating semiconductor device | |
US6806112B1 (en) | High brightness light emitting diode | |
US7112456B2 (en) | Vertical GaN light emitting diode and method for manufacturing the same | |
TWI405350B (zh) | Light emitting element and manufacturing method thereof | |
US8309377B2 (en) | Fabrication of reflective layer on semiconductor light emitting devices | |
JP2002203987A (ja) | 半導体発光素子及びその製造方法 | |
JPH098403A (ja) | 窒化物半導体素子の製造方法及び窒化物半導体素子 | |
JP2007134388A (ja) | 窒化物系半導体素子とその製造方法 | |
JP2003283052A (ja) | 半導体装置及びその製造方法 | |
JPH06177434A (ja) | 青色発光素子及びその製造方法 | |
TWI237909B (en) | Thin-film semiconductor component and its production method | |
JP2010028140A (ja) | 窒化物系化合物半導体発光素子の製造方法 | |
JP4594708B2 (ja) | 発光ダイオードおよびその製造方法、発光ダイオードランプ。 | |
JPH11126924A (ja) | 窒化ガリウム系化合物半導体素子の製造方法 | |
TWI817264B (zh) | 垂直式發光二極體及其製造方法 | |
US20070158665A1 (en) | Light emitting diode | |
JP4655209B2 (ja) | 貼り合せ体の製造方法、及び半導体装置の製造方法、並びに半導体装置 | |
JPH0653550A (ja) | 多波長光半導体整列素子 | |
JP2009016367A (ja) | 発光ダイオードの製造方法 | |
KR20010079490A (ko) | Ⅲ-ⅴ족 질화물계 반도체 소자 | |
JP2010123861A (ja) | 貼り合わせ基板の製造方法、発光ダイオードの製造方法及び発光ダイオード | |
JPH0888410A (ja) | 発光ダイオード | |
JPS6132583A (ja) | 半導体発光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070511 |
|
A524 | Written submission of copy of amendment under section 19 (pct) |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20080610 |
|
A59 | Written plea |
Free format text: JAPANESE INTERMEDIATE CODE: A59 Effective date: 20080723 |
|
A072 | Dismissal of procedure |
Free format text: JAPANESE INTERMEDIATE CODE: A072 Effective date: 20081017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100603 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100830 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101228 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110518 |