JP2007194498A - Solid-state image pick-up device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a compact and low-profile solid-state image pick-up device as well as a method that allows the reliable and easy manufacture of the solid-state image pick-up device. <P>SOLUTION: The solid-state image pick-up device comprises a semiconductor substrate formed with a solid-state image sensing device that has a photoelectric conversion unit, and a charge transfer unit 40 provided with charge transfer electrodes 3(3a, 3b) for transferring the charge generated by the photoelectric conversion unit; and a translucent member mounted on the surface of the semiconductor substrate to have a cavity opposite to a light receiving region of the solid-state image sensing device. Moreover, an external connection terminal is disposed on the surface opposing the surface of the semiconductor substrate where the solid-state sensing device is formed, and the external connection terminal is electrically connected to the solid-state sensing device via a through-electrode passing through the semiconductor substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly to mounting of a solid-state imaging device.

Solid-state imaging devices including a CCD (Charge Coupled Device), which is an imaging device such as an area sensor, are increasingly required to be reduced in size and thickness due to the necessity of application to mobile phones and digital cameras.
Such a solid-state imaging device includes, as a basic structure, a photoelectric conversion unit such as a photodiode, a charge readout unit from the photoelectric conversion unit, and a charge transfer unit including a charge transfer electrode for transferring the readout charge. Have. A plurality of these charge transfer electrodes are arranged adjacent to each other on a charge transfer channel formed on the surface of the semiconductor substrate, and are sequentially driven by a clock signal.

  As one of them, a solid-state imaging device has been proposed in which a microlens is provided in a light receiving area of the solid-state imaging device and formed in a package having an external connection terminal. As an example of this, there has been proposed a solid-state imaging device that is miniaturized by integrally mounting it so as to have an airtight sealing portion between a light receiving area of the solid-state imaging device and a microlens (patent) Reference 1).

  According to such a configuration, the mounting area can be reduced, and optical components such as a filter, a lens, and a prism can be bonded to the surface of the hermetic sealing portion, and the light collecting ability of the microlens can be improved. It is possible to reduce the mounting size without causing a decrease.

JP-A-7-202152

However, when mounting such a solid-state image pickup device, it is necessary to mount the solid-state image pickup device on a circuit board for electrical connection by a method such as wire bonding and sealing when taking out a signal to the outside. is there. Further, when an external connection terminal is formed on a solid-state imaging device substrate, there are many restrictions on optical connection, mechanical connection, and electrical connection, and it is difficult to reduce the size and thickness.
For example, in a conventional solid-state imaging device, since the region for electrical connection is on the solid-state imaging device forming surface side, a pad forming region for external connection must be specially provided to reduce the mounting area. Had a limit and was the cause of the downsizing.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a solid-state imaging device that can be reduced in size and thickness.
Another object of the present invention is to provide a method for manufacturing a solid-state imaging device that is easy to manufacture and highly reliable.

Therefore, in the present invention, a semiconductor substrate formed with a solid-state imaging device including a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode that transfers charges generated in the photoelectric conversion unit, and the solid state A translucent member mounted on the surface of the semiconductor substrate so as to face the light receiving region of the image sensor, and an external connection terminal is provided on the surface of the semiconductor substrate facing the solid-state image sensor formation surface. The external connection terminal is electrically connected to the solid-state imaging device through a through electrode penetrating the semiconductor substrate.
With this configuration, it is possible to provide a chip-size package type solid-state imaging device that can be packaged in the size of the solid-state imaging device substrate without providing a special external connection terminal formation region, and can be easily reduced in size and thickness. It becomes possible.

According to the present invention, in the solid-state imaging device, the through electrode is connected to a back surface of a pad formed on the surface of the semiconductor substrate from a surface side facing the solid-state imaging element forming surface.
With this configuration, it is possible to perform a probe inspection on the pad on the front surface side, and it is possible to form the pad without changing the manufacturing process of a normal solid-state imaging device.

According to the present invention, in the solid-state imaging device, the pad includes a conductor layer formed in the same process as a light-shielding film that has an opening in the photoelectric conversion unit and covers a charge transfer unit around the opening.
With this configuration, since the pad is formed in the same process as the light shielding film, it can be formed without requiring any additional process in the manufacturing process of a normal solid-state imaging device, and the increase in man-hours can be suppressed. Become.

According to the present invention, in the solid-state imaging device, the pad includes a pad base formed of a polycrystalline silicon film, a light shielding film that covers the surface of the pad base, and a metal film that covers the light shielding film. Including things.
With this configuration, the pad can be formed in the same process as the formation of the element portion. If an aluminum wiring layer is used for the metal film covering the light shielding film, the pad can be formed as it is without adding a process only by changing the mask for patterning.

According to the present invention, in the solid-state imaging device, the light shielding film includes a tungsten or tungsten alloy film.
With this configuration, the formation of the pad can be realized as it is without adding a process only by changing the mask for patterning. As described above, it is desirable to use a tungsten film or a tungsten alloy film as the light shielding film, and this structure can also serve as a local wiring pattern of the peripheral circuit portion, and a wiring pattern having a high light shielding property and a low resistance is formed in the same process. can do.

According to the present invention, in the solid-state imaging device, the light-shielding film includes a light-shielding film formed through an adhesion layer that covers a surface of the pad base.
With this configuration, the presence of the adhesion layer not only improves the adhesion, but also acts as an etching stopper for forming a through hole for forming the through electrode, so that the manufacturing workability is improved.

In the present invention, in the solid-state imaging device, the adhesion layer includes one that is TiN.
This configuration is more effective for improving adhesion and also as an etching stopper for forming a through hole for forming a through electrode.

According to the present invention, in the solid-state imaging device, the pad base is formed of a ring-shaped polycrystalline silicon film having a through opening, and the through electrode formed in the through opening through an insulating film includes: The thing which contact | abutted from the back surface side is included.
With this configuration, adhesion and electrical connectivity can be improved.

According to the present invention, in the solid-state imaging device, the through electrode is formed so as to be flush with the back surface of the semiconductor substrate and constitutes an external connection terminal.
This configuration is extremely effective for forming the external connection terminal from the back surface of the semiconductor substrate on which the solid-state imaging device is formed.

According to the present invention, in the solid-state imaging device, the through electrode includes an external connection terminal having a protruding portion protruding from the back surface of the semiconductor substrate.
With this configuration, mounting including electrical connection to a device such as a portable terminal is facilitated.

  According to the present invention, in the solid-state imaging device, the through electrode includes one made of copper (Cu).

In the present invention, in the solid-state imaging device, the metal film includes an aluminum film, and an upper layer thereof is covered with a passivation film having an opening.
With this configuration, the surface side can be used for probe inspection.

In the present invention, a solid-state imaging device is formed on a semiconductor substrate, the solid-state imaging device substrate is formed, and a light-transmitting property is formed on the surface of the semiconductor substrate so as to have a gap facing the light-receiving region of the solid-state imaging device. A method of forming a solid-state imaging device by mounting a member, wherein the step of forming the solid-state imaging device substrate transfers a photoelectric conversion unit and a charge generated in the photoelectric conversion unit to a semiconductor substrate Forming an element region including a charge transfer portion including a transfer electrode; forming a wiring portion including a wiring layer at a peripheral portion of the element region of the semiconductor substrate; and protecting the surface of the semiconductor substrate. Forming a film; forming an insulating film on the back surface of the semiconductor substrate; and forming an opening for forming a contact in a peripheral portion of the insulating film, and using the insulating film as a mask, the wiring from the back surface side Reach layer A step of forming a through hole by etching the semiconductor substrate, a step of forming an insulating film on an inner wall of the through hole, a step of filling a conductor in the through hole, and forming a through electrode including.
With this configuration, a solid-state imaging device in which external connection terminals are formed on the back side of the solid-state imaging element substrate can be easily and efficiently formed.

According to the present invention, in the method of manufacturing the solid-state imaging device, the step of forming the wiring portion includes a step of forming a pad base made of a polycrystalline silicon layer, and a conductor layer so as to cover the pad base. The step of forming the pad base is the same step as the step of forming the charge transfer electrode, and the step of forming the conductor layer is the same step as the light shielding film covering the charge transfer electrode. Including some.
With this configuration, it can be formed only by changing the mask pattern without increasing the number of steps.

In the present invention, in the method for manufacturing a solid-state imaging device, the light shielding film includes a tungsten or tungsten alloy film.
With this configuration, the tungsten or tungsten alloy film is a very good film with low resistance as an electrode, and can be formed only by changing the mask pattern without increasing the number of steps.

According to the present invention, in the method for manufacturing a solid-state imaging device, the light shielding film is formed through an adhesion layer that covers a surface of the pad base, and the step of forming the through hole includes etching the adhesion layer with an etching stopper. And a step of etching so as to penetrate the semiconductor substrate and the pad base.
With this configuration, since the adhesion layer serves as an etching stopper, the through hole can be formed with good controllability.

Moreover, in this invention, in the manufacturing method of the said solid-state imaging device, the said contact | adherence layer contains what is TiN.
With this configuration, while acting as a good etching stopper, it is also used as an adhesion layer between the light-shielding film of the charge transfer electrode and the base, so that it can be formed without increasing the number of steps.

  In the present invention, in the method for manufacturing the solid-state imaging device, the step of forming the through electrode includes a step of filling the through hole with copper by a plating method.

In the present invention, in the method of manufacturing the solid-state imaging device, the step of forming the through electrode includes a step of planarizing the copper surface by CMP.
With this configuration, a flat surface can be obtained efficiently.

According to the present invention, in the method for manufacturing a solid-state imaging device, the step of forming the through electrode includes a step of forming a bump serving as a protruding portion with respect to the copper.
With this configuration, mounting on a device such as a portable terminal becomes extremely easy.

According to the present invention, in the method for manufacturing a solid-state imaging device, a step of mounting a translucent member on the surface of the semiconductor substrate so as to have a gap facing the light receiving region of the solid-state imaging device; After the step of mounting the member, the method includes a step of separating into individual solid-state imaging devices.
With this configuration, a chip size package can be formed very easily and with high productivity.

  As described above, according to the present invention, a small and thin solid-state imaging device can be formed very easily. In addition, the external connection terminals can be formed from the back side of the solid-state image pickup device substrate, and the mounting on a device such as a portable terminal is extremely easy and the mounting area is extremely small.

  Next, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
As shown in FIG. 1, the solid-state imaging device includes a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode that transfers a charge generated in the photoelectric conversion unit. A solid-state imaging device substrate 100 made of a silicon substrate 1 formed with an element, and a translucent member 200 mounted on the surface of the silicon substrate 1 so as to have a gap facing the light receiving region, An external connection terminal T is disposed on the surface facing the solid-state image sensor formation surface of 1, and the external connection terminal is electrically connected to the solid-state image sensor via a through electrode 13 penetrating the silicon substrate 1. And constitutes a chip size package. 2 and 3 are a cross-sectional view and a plan view of the solid-state imaging device substrate (FIG. 2 is a cross-sectional view taken along the line AA in FIG. 3). As shown in FIG. 2A, the solid-state imaging device substrate has a gate oxide film 2 formed on the surface of a silicon substrate 1 on which a p-well (not shown) and an n-type semiconductor layer (not shown) are formed. A plurality of charge transfer electrodes 3 (3 a, 3 b) arranged via the gate electrode are separated and formed into a plurality of charge transfer electrodes by an interelectrode insulating film 4 formed on the gate oxide film 2 at a predetermined interval. The light receiving region of the photodiode 30 as a photoelectric conversion portion is covered with a light shielding film 8 having an opening, and the upper layer is formed with an insulating film 9 made of a BPSG film, and the upper layer is covered with a silicon nitride film 10. Further, a lens layer 60 is formed on the upper layer via a color filter layer 50 and a planarizing film 71 made of a resin film.

  2B, an external connection terminal T is disposed on the surface of the solid-state image pickup device substrate 100 facing the solid-state image pickup device formation surface of the silicon substrate. Is electrically connected to the solid-state imaging device through a through electrode 13 penetrating the silicon substrate 1.

On the surface side where the through electrode 13 abuts, a ring-shaped pad base 3S formed of a polycrystalline silicon film so as to surround the through electrode 13 and a TiN layer as an adhesion layer 8S covering the surface of the pad base 3S are provided. A light shielding film 8 made of a tungsten layer and a metal film 12 made of an aluminum layer covering the light shielding film 8. This upper layer is covered with a passivation film 15 having an opening for probe inspection.
Since the adhesion layer 8S functions as an etching stopper for forming a through hole for forming a through electrode, the manufacturing workability is very good.

  As shown in a plan view in FIG. 3, a plurality of photodiodes 30 are formed on the silicon substrate 1, and a charge transfer unit 40 for transferring signal charges detected by the photodiodes is provided between the photodiodes 30. Are formed in a meandering shape. Although not shown, the charge transfer channel through which the signal charge transferred by the charge transfer unit 40 moves is formed to have a meandering shape in a direction intersecting with the direction in which the charge transfer unit 40 extends.

Further, a photodiode 30 having a pn junction, a charge transfer channel, a channel stop region, and a charge readout region are formed in the silicon substrate 1 in which the p-well is formed. A gate oxide film 2 is formed on the surface of the silicon substrate 1. Thus, the interelectrode insulating film 5 made of a silicon oxide film and the charge transfer electrode 3 (charge transfer portion 40) are formed. Here, the gate oxide film 2 is composed of a three-layer film of a silicon oxide film formed by thermal oxidation, a silicon nitride film formed by a low pressure CVD method, and a silicon oxide film formed by a thermal oxidation method. (The upper oxide film may be formed by a CVD method.)

  The charge transfer unit 40 includes a first electrode made of the first layer doped polycrystalline silicon film 3a and a second layer doped polycrystalline silicon film formed on the surface of the silicon substrate 1 via the gate oxide film 2. A second electrode made of 3b is juxtaposed via an interelectrode insulating film 4 made of a silicon oxide film to constitute a single-layer electrode structure. The pad base 3S is formed in the same process as the first layer doped polycrystalline silicon film 3a or the second layer doped polycrystalline silicon film 3b.

  The upper layers of the first and second electrodes are covered with the silicon oxide film 5 and have a film thickness of 30 nm so as to extend from the surface of the photodiode 30 onto a part of the silicon oxide film 5 of the charge transfer section 40. An antireflection film 6 made of a silicon nitride film is formed. On the photodiode 30, an interlayer insulating film 9 made of a BPSG film and a passivation film 10 made of a silicon nitride film are formed.

Next, the manufacturing process of this solid-state imaging device will be described.
4 to 6 are cross-sectional views showing a through electrode forming process in the manufacturing process of the solid-state imaging device. In each figure, the element part including the photoelectric conversion part composed of the photodiode region 30 on the left side (a) in FIG. 2 and the charge transfer part 40 is omitted, and only the peripheral circuit part on the right side (b) in FIG. 2 is shown. .
First, a charge transfer electrode having a single-layer electrode structure is formed by a normal method. That is, a 25-nm-thick silicon oxide film, a 50-nm-thick silicon nitride film, and a 10-nm-thick silicon oxide film are formed on the surface of an n-type silicon substrate 1 having an impurity concentration of about 1.0 × 10 ¹⁶ cm ^−3. Then, a gate oxide film 2 having a three-layer structure is formed.

Subsequently, a first layer polycrystalline silicon film having a film thickness of 0.25 μm is formed on the gate oxide film 2 by a low pressure CVD method using PH ₃ , N _2, and SiH ₄ , and phosphorus doping is performed. First layer doped polycrystalline silicon film 3a is formed. The substrate temperature at this time shall be 500-600 degreeC.

Thereafter, the first-layer doped polycrystalline silicon film 3a is patterned by photolithography to form a first electrode, and the surface of the first electrode is thermally oxidized to form a silicon oxide film 4 having a thickness of 80 to 90 nm. Form. In this patterning, reactive ion etching using a mixed gas of HBr and O ₂ is performed to form wirings for the first electrode and the peripheral circuit. Here, it is desirable to use an etching apparatus such as an ECR (Electron Cyclotoron Resonance) system or an ICP (Inductively Coupled Plasma) system.

Similarly, a second layer polycrystalline silicon film having a thickness of 0.6 μm is deposited and phosphorus-doped by a low pressure CVD method using PH ₃ , N _2, and SiH ₄ in the same manner as this upper layer. A crystalline silicon film 3b is formed and planarized using a CMP (chemical mechanical polishing) method to form a second electrode in which the first and second electrodes are juxtaposed on the gate oxide film 2. Further, a silicon oxide film 5 having a thickness of 80 to 90 nm is formed on the upper layer after thermal oxidation. At this time, it is desirable to cover the first layer doped polycrystalline silicon film 3a with a silicon nitride film so as not to be excessively oxidized. The pad base 3S is formed together with the wiring constituting the peripheral circuit in the same process as the first layer doped polycrystalline silicon film or the second layer doped polycrystalline silicon film described later.

  Then, after removing the silicon nitride film on the photodiode, an HTO thin film of 10 nm is formed on the upper layer by a low pressure CVD method, and an antireflection film 6 made of a silicon nitride film having a thickness of 30 nm is formed by the CVD method.

  Thereafter, a titanium nitride layer as the adhesion layer 8S is formed by sputtering, and then a tungsten film as the light shielding film 8 is formed by CVD. Then, the light shielding film 8 in the photodiode portion and the peripheral circuit portion is removed by etching by photolithography to perform patterning. Then, a BPSG film having a thickness of 300 nm is formed, heated to 800 to 850 ° C. by furnace annealing, and flattened to form an interlayer insulating film 9.

Then, an opening for forming a contact in the peripheral circuit portion is formed. This state is shown in FIG. Reference numeral 15 denotes a passivation film. The contact formation opening in the peripheral circuit portion is not formed at this time, and a method of exposing the pad surface, for example, when the microlens is etched back is also effective.

  Thereafter, as shown in FIG. 4B, the surface of the silicon substrate on which the solid-state image sensor is formed (solid-state image sensor substrate 100) is covered and protected with a resist R1, and then an insulating film made of a silicon oxide film is formed on the back surface. To do.

  Then, as shown in FIG. 5A, a resist pattern R2 for forming a through hole having an opening smaller than the pad base 3S on the back surface side is formed.

  Then, as shown in FIG. 5B, using the resist pattern R2 as a mask, the silicon substrate 1 is etched from the back side to form through holes. At this time, the TiN layer as the adhesion layer 8S is used as an etching stopper.

  Thereafter, as shown in FIG. 6A, after the silicon oxide film 14 is formed in the through hole by the CVD method, the silicon oxide film 14 is left only on the side wall of the through hole by anisotropic etching.

Then, as shown in FIG. 6B, a TiN layer is formed in the through hole by the PVD method, Cu is formed by the plating method, and then flattened by CMP.
In this manner, a solid-state image sensor substrate on which external connection terminals are formed is formed.

Subsequently, a mounting method using the solid-state imaging device substrate 100 will be described.
First, the translucent substrate 200 on which the spacer 300 is formed as shown in FIG. 7B is aligned with the solid-state imaging device substrate 100 shown in FIG. 7A and fixed at the wafer level (FIG. 7C). )).

The state after this fixing is shown in FIG.
Then, the wafer is diced along a dicing line DL and divided into individual solid-state imaging devices. In this way, the solid-state imaging device shown in FIG. 1 is formed.

In this way, it is possible to provide a small and thin solid-state imaging device constituting a chip size package in which the external connection terminals are formed on the back surface side of the solid-state imaging device substrate.
Further, since electrical connection from the back side is possible, it is very easy to attach to an electronic device such as a portable terminal, and the occupied area can be reduced. In addition, the wiring can be easily formed, and manufacturing is easy and reliable.
Moreover, since it is a wafer level package, a series of manufacturing processes are made efficient and manufacturing cost can be easily reduced.
As a through electrode forming process, a series of processes may be performed after the formation and planarization of the BPSG film, and Cu is covered with a protective layer to prevent diffusion, and is finally exposed. Anyway. This makes it possible to recover damage due to sintering, and a high-temperature process can be introduced by selecting a heat-resistant material as a protective layer.

  In the above embodiment, a non-doped polycrystalline silicon layer is formed as a conductor layer for forming an electrode, and doping is performed after the film formation. However, a doped amorphous silicon film may be deposited.

In the above embodiment, the through electrode is formed of a polycrystalline silicon film. However, the present invention is not limited to this, and so-called selective plating in which a plated layer is selectively grown on the exposed TiN in the through hole. A through electrode may be formed.
The through electrode is formed so as to have the same surface as the back surface of the silicon substrate, but a protruding portion such as a gold bump may be formed.

  Further, the pad on the surface side of the substrate to which the through electrode is connected can be formed without being limited to the above configuration, and the pad on the surface side is omitted when the inspection probe is applied from the back side. Also good.

  Furthermore, in the above-described embodiment, the wafer level chip size package formed by mounting at the wafer level and finally dicing has been described. However, the present invention is not limited to this, and a mounting substrate such as a normal film carrier is used. It goes without saying that the mounting used or the mounting connected to the BGA (ball grid array) via the rearrangement wiring can be appropriately changed.

  Note that the present invention is not limited to the above-described embodiment, and can be appropriately made within the scope of the technical idea of the present invention.

  As described above, the solid-state imaging device of the present invention can be easily mounted on an electronic device such as a portable terminal, and can be extremely reduced in size and thickness. Therefore, the solid-state imaging device is used for a digital camera, a mobile phone, and the like. It is extremely effective as a small imaging device.

1 is a schematic perspective view of a solid-state imaging device according to an embodiment of the present invention. 1 is a schematic cross-sectional view of a solid-state imaging element substrate of a solid-state imaging device according to an embodiment of the present invention. It is a top view of the solid-state image sensor board | substrate of the solid-state imaging device of embodiment of this invention. It is sectional drawing which shows the manufacturing process of the solid-state image sensor board | substrate of the solid-state imaging device of embodiment of this invention. It is sectional drawing which shows the manufacturing process of the solid-state image sensor board | substrate of the solid-state imaging device of embodiment of this invention. It is sectional drawing which shows the manufacturing process of the solid-state image sensor board | substrate of the solid-state imaging device of embodiment of this invention. It is sectional drawing which shows the manufacturing process of the solid-state imaging device of embodiment of this invention. It is a perspective view which shows the manufacturing process of the solid-state imaging device of Embodiment 1 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Gate oxide film 3 Charge transfer electrode 3a 1st layer polycrystalline silicon film 3b 2nd layer polycrystalline silicon film 3S Pad base | substrate 4 Interelectrode insulating film 5 Insulating film 6 Antireflection film 8S Adhesion layer 8 Light shielding film 9 Interlayer Insulating film 10 Passivation film 12 Metal film (aluminum film)
13 Through electrode 14 Silicon oxide film 15 Passivation film 100 Solid-state imaging device substrate 200 Translucent substrate 300 Spacer DL Dicing line T Terminal

Claims (21)

A semiconductor substrate formed with a solid-state imaging device comprising a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode for transferring charges generated in the photoelectric conversion unit;
A translucent member mounted on the surface of the semiconductor substrate so as to have a gap facing the light receiving region of the solid-state imaging device;
External connection terminals are disposed on the surface of the semiconductor substrate facing the solid-state imaging element forming surface,
The solid-state imaging device in which the external connection terminal is electrically connected to the solid-state imaging element through a through electrode penetrating the semiconductor substrate. The solid-state imaging device according to claim 1,
The through electrode is a solid-state imaging device connected to a back surface of a pad formed on the surface of the semiconductor substrate from a surface side facing the solid-state imaging element forming surface. The solid-state imaging device according to claim 1 or 2,
The pad is a solid-state imaging device including a conductor layer having an opening in the photoelectric conversion unit and formed in the same process as a light shielding film covering a charge transfer unit around the opening. The solid-state imaging device according to claim 3,
The pad is a solid-state imaging device comprising a pad base formed of a polycrystalline silicon film, a light shielding film covering the surface of the pad base, and a metal film covering the light shielding film. The solid-state imaging device according to claim 4,
The solid-state imaging device, wherein the light shielding film is tungsten or a tungsten alloy film. The solid-state imaging device according to claim 5,
The light-shielding film is a solid-state imaging device formed through an adhesion layer covering the pad base surface. The solid-state imaging device according to claim 6,
The solid-state imaging device, wherein the adhesion layer is TiN. The solid-state imaging device according to claim 7,
The pad base is formed of a polycrystalline silicon film having a through opening,
A solid-state imaging device in which a through electrode formed in the through opening through an insulating film is in contact with the adhesion layer from the back side. The solid-state imaging device according to any one of claims 1 to 8,
The through electrode is formed so as to have the same plane as the back surface of the semiconductor substrate, and constitutes an external connection terminal. The solid-state imaging device according to any one of claims 1 to 8,
The through electrode is a solid-state imaging device that constitutes an external connection terminal having a protruding portion protruding from the back surface of the semiconductor substrate. The solid-state imaging device according to claim 1,
The through electrode is a solid-state imaging device made of copper (Cu). The solid-state imaging device according to claim 4,
The solid-state imaging device, wherein the metal film is made of an aluminum film and the upper layer thereof is covered with a passivation film having an opening. Forming a solid-state image sensor on a semiconductor substrate and forming a solid-state image sensor substrate;
A method of forming a solid-state imaging device by mounting a translucent member on the surface of the semiconductor substrate so as to have a gap facing the light-receiving region of the solid-state imaging element,
The step of forming the solid-state imaging device substrate includes:
Forming a device region including a photoelectric transfer unit and a charge transfer unit including a charge transfer electrode for transferring charges generated in the photoelectric conversion unit on a semiconductor substrate;
Forming a wiring portion including a wiring layer on a peripheral portion of the element region of the semiconductor substrate;
Forming a protective film on the surface of the semiconductor substrate;
Forming an insulating film on the back surface of the semiconductor substrate;
Forming a through-hole by forming an opening for forming a contact in a peripheral portion of the insulating film, and etching the semiconductor substrate from the back surface side to the wiring layer using the insulating film as a mask; ,
Forming an insulating film on the inner wall of the through hole;
And a step of filling the through hole with a conductor to form a through electrode. It is a manufacturing method of the solid-state imaging device according to claim 13,
The step of forming the wiring portion includes a step of forming a pad base made of a polycrystalline silicon layer, and a step of forming a conductor layer so as to cover the pad base.
The step of forming the pad base is the same as the step of forming the charge transfer electrode,
The method of manufacturing a solid-state imaging device, wherein the step of forming the conductor layer is the same step as the light shielding film covering the charge transfer electrode. The method for manufacturing a solid-state imaging device according to claim 13 or 14,
The method for manufacturing a solid-state imaging device, wherein the light-shielding film is tungsten or a tungsten alloy film. A method of manufacturing a solid-state imaging device according to claim 14 or 15,
The light-shielding film is formed through an adhesion layer covering the pad base surface,
The step of forming the through hole is a method of manufacturing a solid-state imaging device, which is a step of etching so as to penetrate the semiconductor substrate and the pad base using the adhesion layer as an etching stopper. A method of manufacturing a solid-state imaging device according to claim 16,
The method for manufacturing a solid-state imaging device, wherein the adhesion layer is TiN. A method for manufacturing a solid-state imaging device according to claim 17,
The step of forming the through electrode includes a step of filling the through hole with copper (Cu) by a plating method. A method for manufacturing a solid-state imaging device according to claim 18,
The step of forming the through electrode includes a step of planarizing the copper (Cu) surface by CMP. A method of manufacturing a solid-state imaging device according to claim 19,
The step of forming the through electrode includes a step of forming a bump serving as a protrusion on the copper (Cu). A method for manufacturing a solid-state imaging device according to any one of claims 13 to 20,
Mounting a translucent member on the surface of the semiconductor substrate so as to have a gap facing the light receiving region of the solid-state imaging device;
After the step of mounting the translucent member,
A manufacturing method of a solid-state imaging device including a step of separating into individual solid-state imaging devices.

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