JP2007187619A5 - - Google Patents
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- JP2007187619A5 JP2007187619A5 JP2006007411A JP2006007411A JP2007187619A5 JP 2007187619 A5 JP2007187619 A5 JP 2007187619A5 JP 2006007411 A JP2006007411 A JP 2006007411A JP 2006007411 A JP2006007411 A JP 2006007411A JP 2007187619 A5 JP2007187619 A5 JP 2007187619A5
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- wafer
- contact
- sensor
- sensors
- temperature
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Claims (13)
前記ウェハ上面を複数の領域に区分し、区分された各領域に配置された複数のセンサと、
前記ウェハ表面で前記複数のセンサと電気的に接続され、外部接触子と接続して前記複数のセンサのセンサ出力を出力信号として出力する接点とを備える、ウェハ型センサ。 A wafer,
Dividing the wafer upper surface into a plurality of regions, a plurality of sensors arranged in each of the divided regions;
A wafer type sensor comprising: a contact point electrically connected to the plurality of sensors on the wafer surface and connected to an external contact to output sensor outputs of the plurality of sensors as output signals.
前記選択手段は、前記グループ毎に設けられてグループ内のセンサのセンサ出力を選択する1以上のグループ別選択手段を含み、
前記接点は、前記グループ別選択手段毎に設けられ、対応するグループ別選択手段からのセンサ出力が与えられる1以上のグループ別接点を含む、請求項2に記載のウェハ型センサ。 The wafers are grouped into one or more groups each including one or more sensors ,
It said selection means comprises one or more group-specific selection means for selecting the sensor output of the sensor in the group provided for each said group,
The wafer type sensor according to claim 2, wherein the contact is provided for each of the group selection units and includes at least one group contact that is provided with a sensor output from the corresponding group selection unit.
前記ウェハ型センサの接点に接触可能な接触子と、
前記接触子が前記接点に接続されたことに応じて、前記複数のセンサのセンサ出力に基づいて、前記ウェハ上の各領域の状態を判別する判別手段とを備える、状態測定装置。 Wafer, the wafer upper surface is divided into a plurality of regions, a plurality of sensors arranged in each region is divided, and wherein the plurality of sensors and is electrically connected to the wafer surface, the sensor outputs of the plurality of sensors A wafer type sensor having a contact for outputting as an output signal;
A contactor capable of contacting a contact of the wafer type sensor ;
A state measurement apparatus comprising: a determination unit configured to determine a state of each region on the wafer based on sensor outputs of the plurality of sensors in response to the contact being connected to the contact.
ウェハ、前記ウェハ上面に配置された複数のセンサ、および前記ウェハ表面で前記複数のセンサと電気的に接続され、前記複数のセンサのセンサ出力を出力信号として出力する接点を備えるウェハ型センサを収容可能な筐体と、
前記筐体内で、前記ウェハを加熱または冷却するプレートと、
前記筐体内部に配置され、前記ウェハ型センサの接点に接触可能な接触子と、
前記筐体外部に配置され、前記ウェハ型センサからのセンサ出力を管理するデータ管理部とを備える、装置。 A device having a state measuring function ,
Wafer, the wafer upper surface arranged plurality of sensors, and the being the connection plurality of sensors and electrically at the wafer surface, accommodates the wafer-type sensor comprising a contact for outputting the sensor outputs of the plurality of sensors as an output signal Possible housing,
A plate for heating or cooling the wafer in the housing;
A contact disposed within the housing and capable of contacting a contact of the wafer-type sensor ;
The housing is arranged outside, and a data management unit for managing sensor output from said wafer sensor apparatus.
前記接点は、前記ウェハの上面に設けられ、
前記接触子は、前記接点に対向するように前記蓋部材の下面に設けられ、前記蓋部材が降下したときに前記接点に接触する、請求項8〜10のいずれかに記載の装置。 The apparatus further includes a lid member provided to be movable up and down above the wafer type sensor ,
The contact is provided on an upper surface of the wafer;
The contacts are provided on the lower surface of the lid member so as to face the contact point, contact with the contact when the lid member is lowered, according to any one of claims 8-10.
前記接触子は、前記ピンの先端に設けられ、
前記接点は、前記接触子と対向するように前記ウェハの下面に設けられ、
前記接触子は、前記ウェハ型センサが前記ピン上に載置されたときに前記接点に接触する、請求項8〜10のいずれかに記載の装置。 The apparatus further includes a pin that protrudes from the plate and supports the wafer-type sensor ,
The contact is provided at the tip of the pin,
The contact is provided on the lower surface of the wafer so as to face the contact,
The said contactor is an apparatus in any one of Claims 8-10 which contacts the said contact, when the said wafer type sensor is mounted on the said pin.
前記装置に対して加熱時間および加熱温度を含むレシピパラメータを入力する工程と、
ウェハと、前記ウェハ上面の複数の領域に区分し、区分された各領域に配置された複数の温度センサと、前記ウェハ表面で前記複数の温度センサと電気的に接続され、前記複数の温度センサのセンサ出力を出力信号として出力する接点とを有するウェハ型温度センサを前記装置内に搬入する工程と、
前記ウェハ型温度センサの接点と、前記装置内部に設けられた接触子とを接続する工程と、
前記装置の外部に設けられて前記ウェハ上の各領域の温度を判別する判別手段に、前記複数の温度センサのセンサ出力を前記接点を介して送信する工程と、
前記接点と前記接触子との連結を解除して、前記ウェハ型温度センサを前記装置内から搬出する工程とを含む、温度測定方法。 A method for measuring a temperature on a wafer placed in an apparatus ,
Inputting recipe parameters including heating time and heating temperature to the device ;
A plurality of temperature sensors which are divided into a plurality of regions on the wafer upper surface and are arranged in each of the divided regions; and the plurality of temperature sensors electrically connected to the plurality of temperature sensors on the wafer surface Carrying a wafer-type temperature sensor having a contact for outputting the sensor output as an output signal into the apparatus ;
Connecting the contact point of the wafer type temperature sensor and a contact provided inside the apparatus ;
Transmitting the sensor outputs of the plurality of temperature sensors via the contacts to a determination unit provided outside the apparatus for determining the temperature of each region on the wafer;
And releasing the connection between the contact and the contact and carrying out the wafer temperature sensor from the apparatus .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006007411A JP4904822B2 (en) | 2006-01-16 | 2006-01-16 | Equipment with temperature measurement function |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006007411A JP4904822B2 (en) | 2006-01-16 | 2006-01-16 | Equipment with temperature measurement function |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007187619A JP2007187619A (en) | 2007-07-26 |
JP2007187619A5 true JP2007187619A5 (en) | 2009-02-26 |
JP4904822B2 JP4904822B2 (en) | 2012-03-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006007411A Expired - Fee Related JP4904822B2 (en) | 2006-01-16 | 2006-01-16 | Equipment with temperature measurement function |
Country Status (1)
Country | Link |
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JP (1) | JP4904822B2 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011221006A (en) * | 2010-03-23 | 2011-11-04 | Tokyo Electron Ltd | Wafer type temperature detection sensor and method of manufacturing the same |
JP5296022B2 (en) * | 2010-08-09 | 2013-09-25 | 東京エレクトロン株式会社 | Heat treatment method, recording medium recording program for executing heat treatment method, and heat treatment apparatus |
JP2012230023A (en) * | 2011-04-27 | 2012-11-22 | Tokyo Electron Ltd | Temperature measurement device and temperature calibration device and method thereof |
JP5485936B2 (en) * | 2011-04-27 | 2014-05-07 | 東京エレクトロン株式会社 | Temperature calibration apparatus and temperature calibration method |
JP5676398B2 (en) * | 2011-08-29 | 2015-02-25 | 株式会社Sebacs | Substrate temperature measurement system |
JP6391558B2 (en) * | 2015-12-21 | 2018-09-19 | 東京エレクトロン株式会社 | Heat treatment apparatus, method for heat treatment of substrate, and computer-readable recording medium |
KR102076293B1 (en) * | 2017-11-30 | 2020-03-02 | (주)제이디 | apparatus for storaging sensor mounted wafer, which has temporature correction function |
KR102016401B1 (en) * | 2017-12-12 | 2019-09-02 | (주)제이디 | temporature correction system for sensor mounted wafer |
KR102056089B1 (en) | 2017-12-20 | 2019-12-16 | 주식회사 에스엔텍비엠 | temporature correction apparatus for sensor mounted wafer |
KR102076291B1 (en) * | 2019-07-10 | 2020-02-11 | (주)제이디 | temporature correction system for sensor mounted wafer |
JP2024043947A (en) * | 2022-09-20 | 2024-04-02 | 東京エレクトロン株式会社 | Method for calibrating temperature measurement substrate, substrate temperature measurement system, and temperature measurement substrate |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08306665A (en) * | 1995-04-28 | 1996-11-22 | Ricoh Co Ltd | Physical quantity measuring device in vacuum device |
WO2000068986A1 (en) * | 1999-05-07 | 2000-11-16 | Tokyo Electron Limited | Method and apparatus for vacuum treatment |
JP2001066194A (en) * | 1999-08-27 | 2001-03-16 | Nec Kyushu Ltd | Temperature measuring device |
JP2002016117A (en) * | 2000-06-26 | 2002-01-18 | Hitachi Ltd | Semiconductor wafer provided with processing temperature measuring method and temperature measuring method of semiconductor wafer |
JP3791590B2 (en) * | 2000-12-01 | 2006-06-28 | 株式会社山武 | Non-contact temperature measuring device |
JP3838208B2 (en) * | 2002-08-12 | 2006-10-25 | ソニー株式会社 | Semiconductor wafer heat treatment apparatus and method |
JP2004251789A (en) * | 2003-02-20 | 2004-09-09 | Komatsu Ltd | Temperature measuring instrument and treated substrate |
JP2004264216A (en) * | 2003-03-03 | 2004-09-24 | Ishikawajima Harima Heavy Ind Co Ltd | Temperature measuring device |
DE10314150A1 (en) * | 2003-03-28 | 2004-10-21 | Infineon Technologies Ag | Detecting environmental or process parameters in process-wafer manufacturing environment for semiconductor integrated circuit manufacture, by exposing wafer comprising sensors to manufacturing environment |
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2006
- 2006-01-16 JP JP2006007411A patent/JP4904822B2/en not_active Expired - Fee Related
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