JP2007294489A - Inspection method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain an inspection method of a semiconductor device employing a movable stage to which a semiconductor device can be secured, and a stage for cleaning a probe pin in which electrical inspection of a semiconductor device can be performed with high precision. <P>SOLUTION: An upper surface 17A of a stage 17 for a semiconductor device and/or an upper surface 23A of a cleaning stage 23 are adjusted to become substantially horizontal, based on a displacement detected by a means 35 for detecting the displacement of a second position in the vertical direction of other place on the upper surface 17A of the stage 17 for semiconductor device, and/or the upper surface 23A of the cleaning stage 23 from a first position in the vertical direction of a predetermined place on the upper surface 17A of the stage 17 for semiconductor device and/or the upper surface 23A of the cleaning stage 23. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for inspecting a semiconductor device, and in particular, a semiconductor using an inspection device having a stage for a semiconductor device that is configured to be fixed and movable, and a cleaning stage for cleaning a probe pin. The present invention relates to an apparatus inspection method.

  FIG. 12 is a cross-sectional view of a conventional inspection apparatus. In FIG. 12, the Y1 and Y1 directions indicate the vertical direction, and the X1 and X1 directions indicate the surface directions orthogonal to the vertical direction, respectively.

  Referring to FIG. 12, a conventional inspection apparatus 200 includes a prober 201 and a tester 202. The prober 201 includes a housing 204, a head plate 205, a semiconductor device stage 206, a temperature control means 207, a support 209, a cleaning stage 211, a cleaning sheet 212, a probe card holder 213, and a probe card. 215, a contact ring 219, and a test head 221.

  The housing 204 is for housing the semiconductor device stage 206, the cleaning stage 211, and the like. The upper end of the housing 204 is an open end. The head plate 205 is provided at the upper end of the housing 204 so as to be openable and closable with respect to the housing 204. The head plate 205 is for holding the contact ring 219.

  The semiconductor device stage 206 is for fixing the semiconductor device 208 (one having a plurality of semiconductor integrated circuits formed on a semiconductor substrate). The semiconductor device stage 206 is configured to be movable in the X1 and X1 directions and the Y1 and Y1 directions. The temperature control means 207 is built in the semiconductor device stage 206. The temperature control means 207 is for heating or cooling the semiconductor device 208 to a predetermined temperature via the semiconductor device stage 206.

  The support body 209 is configured to be movable in the X1, X1 direction and the Y1, Y1 direction. The support body 209 is for supporting the cleaning stage 211. The cleaning stage 211 is fixed to the upper end portion of the support 209. The cleaning stage 211 is disposed in the vicinity of the semiconductor device stage 206. The cleaning stage 211 moves integrally with the support 209 when the support 209 moves in the X1, X1 direction and / or the Y1, Y1 direction.

  The cleaning sheet 212 is provided on the upper surface 211A of the cleaning stage 211. The cleaning sheet 212 is used to clean the probe pins 218 by scraping the tips of the probe pins 218 (portions in contact with the semiconductor device 208). The probe card holder 213 is provided below the head plate 205. The probe card holder 213 is for holding the probe card 215.

  The probe card 215 is detachably attached to the probe card holder 213. The probe card 215 is disposed below the contact ring 219. The probe card 215 includes a support substrate 216, a wiring pattern 217, and probe pins 218.

  The support substrate 216 has a plate shape, and is used for disposing the wiring pattern 217 and the probe pins 218. The wiring pattern 217 penetrates the support substrate 216 and is provided across both surfaces of the support substrate 216. The wiring pattern 217 is electrically connected to the connection pin of the contact ring 219. A plurality of probe pins 218 are provided on the lower surface side of the support substrate 216. The probe pin 218 is electrically connected to the wiring pattern 217. When electrical inspection of the semiconductor device 208 is performed by the inspection apparatus 200, the probe pin 218 is in contact with a pad (not shown) of a semiconductor integrated circuit provided in the semiconductor device 208.

  The contact ring 219 is held by the head plate 205. The contact ring 219 is for relaying electrical signals so that signals can be exchanged between the probe card 215 and the test head 221.

  The test head 221 is disposed on the contact ring 219. The test head 221 is electrically connected to the contact ring 219 and the tester 202.

  The tester 202 is electrically connected to the test head 221. The tester 202 performs overall control of the prober 201. Specifically, the tester 202 controls, for example, the movement direction and amount of movement of the semiconductor device stage 206 and the cleaning stage 211, and the inclination control of the upper surface 206A of the semiconductor device stage 206 and the upper surface 211A of the cleaning stage 211. I do. The tester 202 performs electrical inspection of the semiconductor device 208 by driving the prober 201 in accordance with a program stored in the tester 202 in advance.

  The conventional inspection apparatus 200 configured as described above performs an electrical inspection of the semiconductor device 208 while the temperature control means 207 holds the temperature of the semiconductor device 208 at a predetermined temperature.

In the inspection apparatus 200, when the inspection apparatus 200 is introduced, the manufacturer of the inspection apparatus 200 starts up the inspection apparatus 200 (an act of making the inspection apparatus 200 usable by connecting a utility such as a power source). Only the inclination of the upper surface 206A of the semiconductor device stage 206 and the upper surface 211A of the cleaning stage 211 is detected using a dial gauge, a digital indicator, etc., and the upper surface 206A of the semiconductor device stage 206 and the upper surface 211A of the cleaning stage 211 are substantially omitted. Adjustment was performed so as to be horizontal (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 5-144892

  However, in the conventional inspection apparatus 200, the manufacturer of the inspection apparatus 200 performs adjustment so that the upper surface 206A of the semiconductor device stage 206 is substantially horizontal only when the inspection apparatus 200 is introduced. There is a problem in that the upper surface 206A of the apparatus stage 206 is inclined and it is difficult to conduct an electrical inspection of the semiconductor device 208 with high accuracy.

  Further, in the conventional inspection apparatus 200, the manufacturer of the inspection apparatus 200 performs the adjustment so that the upper surface 211A of the cleaning stage 211 is substantially horizontal only when the inspection apparatus 200 is introduced. When the upper surface 211 </ b> A is inclined, the amount of scraping of the tips of the plurality of probe pins 218 is different. As a result, a contact failure occurs between the probe pin 218 and a pad (not shown) of the semiconductor integrated circuit, and there is a problem that it is difficult to conduct an electrical inspection of the semiconductor device 208 with high accuracy.

  Further, when the semiconductor device 208 is electrically tested by heating or cooling the semiconductor device 208 to a predetermined temperature, the upper surface of the semiconductor device stage 206 is higher than the upper surface 206A of the semiconductor device stage 206 at normal temperature due to the influence of heat. The inclination of 206A becomes large. As a result, a contact failure occurs between the probe pin 218 and a pad (not shown) of the semiconductor integrated circuit, and there is a problem that it is difficult to conduct an electrical inspection of the semiconductor device 208 with high accuracy.

  Further, when the semiconductor device 208 is electrically tested by heating or cooling the semiconductor device 208 to a predetermined temperature, a temperature gradient is generated in the cleaning stage 211 disposed in the vicinity of the semiconductor device stage 206, and the cleaning stage 211. The upper surface 211 </ b> A is inclined. As a result, the amount of chipping at the tips of the plurality of probe pins 218 differs, so that contact failure occurs between the probe pins 218 and the pads (not shown) of the semiconductor integrated circuit, and the electrical characteristics of the semiconductor device 208 are reduced. There was a problem that it was difficult to conduct the inspection with high accuracy.

  Accordingly, the present invention has been made in view of the above points, and an object of the present invention is to provide a method for inspecting a semiconductor device that can accurately conduct an electrical inspection of the semiconductor device.

According to one aspect of the present invention, the semiconductor device (20) is fixed and the semiconductor device stage (17) configured to be movable, and the probe pin (49) of the probe card (31) are cleaned. Stage (23);
The upper surface of the semiconductor device stage (17) with respect to a first vertical position at a predetermined location on the upper surface (17A) of the semiconductor device stage (17) and / or the upper surface (23A) of the cleaning stage (23). (17A) and / or a deviation amount detecting means (35) for detecting a deviation amount of the second position in the vertical direction at another location on the upper surface (23A) of the cleaning stage (23). A method of inspecting a semiconductor device (20) using (10), wherein the upper surface (17A) of the stage (17) for the semiconductor device is based on the deviation amount detected by the deviation amount detection means (35). And / or an inspection method of the semiconductor device (20), characterized in that the upper surface (23A) of the cleaning stage (23) is adjusted to be substantially horizontal.

  According to the present invention, the upper surface (17A) of the semiconductor device stage (17) and / or the upper surface (23A) of the cleaning stage (23) is substantially based on the shift amount detected by the shift amount detection means (35). By adjusting to be horizontal, there is no contact failure between the probe pin (49) and the semiconductor device (20), so that the electrical inspection of the semiconductor device (20) can be performed with high accuracy.

  In addition, the said reference code is a reference to the last, and this invention is not limited to the aspect of illustration by this.

  The present invention can accurately perform an electrical inspection of a semiconductor device.

  Next, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a sectional view of an inspection apparatus according to the first embodiment of the present invention. In FIG. 1, the Y and Y directions indicate the vertical direction, and the X and X directions indicate the surface directions orthogonal to the vertical direction.

  First, referring to FIG. 1, an inspection apparatus 10 used when an electrical inspection of the semiconductor device 20 is performed will be described. The inspection device 10 is configured to include a prober 11 and a tester 12. The prober 11 includes a housing 14, driving devices 15 and 21, supports 16 and 22, a semiconductor device stage 17, a temperature control unit 18, a cleaning stage 23, a cleaning sheet 25, and a head plate 26. , Holder support 27, probe card holder 28, probe card 31, contact ring 32, test head 33, and deviation amount detection means 35.

  The housing 14 is for housing the driving devices 15 and 21, the supports 16 and 22, the semiconductor device stage 17, the cleaning stage 23, the deviation amount detection means 35, and the like. The upper end portion of the housing 14 is an open end.

  The driving device 15 is provided at the bottom of the housing 14. The driving device 15 is a device for moving the semiconductor device stage 17 in the X, X direction and / or the Y, Y direction via the support 16. The support 16 is provided on the drive device 15. The support 16 is for supporting the semiconductor device stage 17.

  The semiconductor device stage 17 is fixed to the upper end of the support 16. The semiconductor device stage 17 is for fixing the semiconductor device 20. The stage 17 for semiconductor device moves integrally with the support 16 when the support 16 is moved by the driving device 15. The semiconductor device 20 is formed by, for example, a plurality of semiconductor integrated circuits formed on a semiconductor substrate made of a material such as Si or Ga-As. The semiconductor integrated circuit has a pad (not shown) with which the tip portion of the probe pin 49 contacts when the semiconductor device 20 is electrically inspected.

  The temperature control means 18 is built in the semiconductor device stage 17. The temperature control means 18 is for heating or cooling the semiconductor device stage 17 so that the temperature of the semiconductor device 20 becomes a predetermined temperature Tx. The predetermined temperature Tx is the temperature of the semiconductor device 20 when the electrical inspection of the semiconductor device 20 is performed. The temperature control means 18 heats the semiconductor device stage 17 when inspecting the semiconductor device 20 at a temperature higher than normal temperature, and when inspecting the semiconductor device 20 at a temperature lower than normal temperature, the semiconductor device stage 17. Cool down.

  The driving device 21 is provided at the bottom of the housing 14. The drive device 21 is a device for moving the cleaning stage 23 in the X, X direction and / or the Y, Y direction via the support 22. The support 22 is provided on the drive device 21. The support 22 is for supporting the cleaning stage 23.

  The cleaning stage 23 is fixed to the upper end portion of the support 22. The cleaning stage 23 moves integrally with the support body 22 when the support body 22 is moved in the X, X direction and / or the Y, Y direction by the driving device 21.

  The cleaning sheet 25 is attached to the upper surface 23 </ b> A of the cleaning stage 23. The cleaning sheet 25 is a sheet for removing the tip portion of the probe pin 49 (the portion that contacts the pad (not shown) of the semiconductor integrated circuit) and cleaning the tip portion of the probe pin 49.

  The head plate 26 includes a head plate main body 37 and a contact ring mounting portion 38. The head plate body 37 is provided at the upper end portion of the housing 14. The head plate body 37 is configured to be openable and closable with respect to the housing 14. The contact ring mounting portion 38 is formed in the head plate main body 37 so as to penetrate near the center of the head plate main body 37. The contact ring mounting portion 38 is for mounting the contact ring 32 to the head plate body 37. Further, the space in the housing 14 is sealed by the head plate 26 to which the contact ring 32 is attached closing the upper end portion of the housing 14.

  The holder support 27 is provided on the lower surface 37 </ b> A of the head plate body 37. The holder support 27 is for supporting the probe card holder 28.

  The probe card holder 28 has a holder main body 41 and a probe card mounting part 42. The holder body 41 is supported by the holder support 27. The probe card mounting portion 42 is provided in the holder main body 41 so as to penetrate near the center of the holder main body 41. The probe card mounting part 42 is for mounting the probe card 31 to the holder main body 41.

  The probe card 31 is detachably attached to the probe card attachment part 42. The probe card 31 includes a support substrate 47, wiring patterns 48 </ b> A and 48 </ b> B, and a plurality of probe pins 49. The support substrate 47 is plate-shaped and has through holes 51A and 51B. The wiring pattern 48 </ b> A fills the through hole 51 </ b> A and is provided across both surfaces of the support substrate 47. The wiring pattern 48 </ b> A is in contact with the connection pin 44 </ b> A of the contact ring 32. The wiring pattern 48 </ b> B fills the through hole 51 </ b> B and is provided across both surfaces of the support substrate 47. The wiring pattern 48B is in contact with the connection pin 44B of the contact ring 32. Thereby, the probe card 31 is electrically connected to the tester 12, the contact ring 32, and the test head 33. The probe pins 49 are provided on the lower surface side of the support substrate 47. The probe pin 49 is connected to the wiring pattern 48A or the wiring pattern 48B. Thereby, the probe pin 49 is electrically connected to the wiring pattern 48A or the wiring pattern 48B.

  The probe card 31 presses the tip of the probe pin 49 against a pad (not shown) of a semiconductor integrated circuit provided in the semiconductor device 20 to input an electric signal to the pad (not shown) of the semiconductor integrated circuit. This is an inspection jig for outputting.

  The contact ring 32 is attached to the contact ring attachment portion 38 in a detachable state. The contact ring 32 has a contact ring main body 43 and connection pins 44A, 44B, 45A, 45B. The contact ring body 43 is electrically connected to the probe card 31 and the test head 33 via connection pins 44A, 44B, 45A, 45B. The contact ring main body 43 is for relaying data (signals) between the probe card 31 and the test head 33.

  The connection pins 44 </ b> A and 44 </ b> B are provided on the lower surface side of the contact ring main body 43. The connection pins 44 </ b> A and 44 </ b> B protrude from the lower surface of the contact ring main body 43. The connection pin 44A is an input connection pin, and the connection pin 44B is an output connection pin. The connection pin 44A is in contact with the wiring pattern 48A, and the connection pin 44B is in contact with the wiring pattern 48B.

  The connection pins 45 </ b> A and 45 </ b> B are provided on the upper surface side of the contact ring main body 43. The connection pin 45A is an input connection pin, and the connection pin 45B is an output connection pin. The connection pins 45A and 45B protrude from the upper surface of the contact ring main body 43 and are electrically connected to the test head 33. The connection pin 45A is electrically connected to the connection pin 44A, and the connection pin 45B is electrically connected to the connection pin 44B.

  The test head 33 is provided on the contact ring 32 and is electrically connected to the contact ring 32. The test head 33 is electrically connected to the tester 12. The test head 33 is for receiving the inspection conditions of the semiconductor device 20 transmitted from the tester 12 and giving the received inspection conditions to the probe card 31 via the contact ring 32.

  The deviation amount detection means 35 is accommodated in the housing 14 and is electrically connected to the tester 12. The deviation amount detection unit 35 includes a driving device 53, a support body 54, and a measurement unit 55. The driving device 53 is provided on the inner wall of the housing 14. The drive device 53 is a device for moving the support 54 in the X and X directions and / or the Y and Y directions. The support 54 has one end connected to the driving device 53 and the other end connected to the measuring unit 55. The support 54 is configured to be stretchable. The support 54 supports the measurement unit 55 and moves the measurement unit 55 to a desired position.

  FIG. 2 is a diagram illustrating a measurement unit of the deviation amount detection unit according to the first embodiment. FIG. 3 illustrates a case where the deviation amount detection unit according to the first embodiment detects the deviation amount of the upper surface of the stage. It is the figure which showed a mode that it was. 2 and 3, the same components as those in the inspection apparatus 10 shown in FIG.

  Referring to FIG. 2, the measuring unit 55 includes a measuring unit main body 57, a stem 58, a spindle 59, a measuring element 61, and a measuring needle 62. The measurement unit main body 57 is supported by the support body 54. The measurement unit main body 57 incorporates a drive unit (not shown) that moves the spindle 59 in the Y and Y directions. The stem 58 accommodates a part of the spindle 59 and prevents the spindle 59 from moving in the X and X directions. A part of the spindle 59 is accommodated in the stem 58. The spindle 59 is configured to be movable in the Y and Y directions. The measuring element 61 is provided at one end of the spindle 59.

  The measuring needle 62 is provided on the measuring element 61. The measuring needle 62 is a predetermined location on the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 (for example, the center of the upper surface 17A in the case of the semiconductor device stage 17 and the upper surface in the case of the cleaning stage 23). 23A in the vertical direction (Y, Y direction) of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 with respect to the first position in the vertical direction (Y, Y direction). This is for detecting the shift amount of the second position. The measuring needle 62 contacts the upper surface 17A of the stage 17 and / or the upper surface 23A of the cleaning stage 23 when detecting the amount of deviation (see FIG. 3).

  The first position in the vertical direction (Y, Y direction) of a predetermined location on the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 is the upper surface 17A of the semiconductor device stage 17 and / or Before detecting the second position in the vertical direction (Y, Y direction) at another location on the upper surface 23 </ b> A of the cleaning stage 23, it is obtained by the deviation amount detection means 35.

  The diameter R1 of the measuring needle 62 is smaller than the diameter of the measuring element 61. The diameter R1 of the measuring needle 62 can be set to 20 μm to 50 μm, for example. As a material of the measuring needle 62, for example, ReW (rhenium tungsten) or W can be used.

  As described above, since the measuring needle 62 having the diameter R1 smaller than the diameter of the measuring element 61 is provided perpendicularly to the semiconductor device stage 17 in the measuring element 61, the accuracy of the overdrive amount is improved. The amount of deviation can be detected with high accuracy.

  In addition, as the measurement part 55, what provided the measuring needle | hook 62 in the measuring element of a dial gauge or a digital indicator can be used, for example. Moreover, as the measurement part 55, it is good to use the dial gauge or digital indicator whose detection error is 2 micrometers or less.

  The deviation amount detecting means 35 having the above-described configuration is a predetermined location on the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 (for example, in the case of the semiconductor device stage 17, the center of the upper surface 17A, the cleaning In the case of the stage 23, the upper surface 17A of the semiconductor device stage 17 and / or the other surface of the upper surface 23A of the cleaning stage 23 with respect to the first position in the vertical direction (Y, Y direction) in the center of the upper surface 23A) ) Of the second position in the vertical direction (Y, Y direction). The deviation amount detection means 35 transmits the detected deviation amount of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 to the tester 12.

  Next, the tester 12 will be described with reference to FIG. The tester 12 is electrically connected to the test head 33 and includes a storage unit 12A and a control unit 12B. The storage unit 12A is electrically connected to the control unit 12B. In the storage unit 12A, a map relating to inspection conditions when the semiconductor device 20 is inspected, predetermined locations on the upper surface 17A of the semiconductor device stage 17 and the upper surface 23A of the cleaning stage 23 measured by the deviation amount detection means 35, and other locations. (Coordinate information of measurement location) and the like are stored.

  The controller 12B performs overall control of the prober 11. For example, the moving direction and moving amount of the semiconductor device stage 17 are controlled via the driving device 15, the moving direction and moving amount of the cleaning stage 23 are controlled via the driving device 21, and the driving device 53 is used. The movement direction and movement amount of the measurement unit 55 are controlled.

  Further, the control unit 12B uses the deviation amount transmitted from the deviation amount detection means 35 so that the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 are substantially horizontal. The inclination of the upper surface 17A of the stage 17 and / or the upper surface 23A of the cleaning stage 23 is adjusted.

  Further, the control unit 12B controls the prober 11 based on the inspection conditions stored in the storage unit 12A to perform an electrical inspection of the semiconductor device 20.

  According to the inspection apparatus of the present embodiment, the displacement amount detection means 35 is provided on the inner wall of the housing 14, and the semiconductor device is based on the displacement amount of the upper surface 17 </ b> A of the semiconductor device stage 17 transmitted from the displacement amount detection means 35. By performing adjustment so that the upper surface 17A of the device stage 17 is substantially horizontal, the probe pin 49 and the semiconductor device 20 (specifically, pads of the semiconductor integrated circuit are used when the semiconductor device 20 is electrically inspected). (Not shown)), the electrical inspection of the semiconductor device 20 can be performed with high accuracy.

  Further, by adjusting the upper surface 23 </ b> A of the cleaning stage 23 to be substantially horizontal based on the amount of deviation of the upper surface 23 </ b> A of the cleaning stage 23 transmitted from the deviation amount detection means 35, a plurality of scrapes are removed by the cleaning sheet 25. It becomes possible to make the amount of cutting of the tip of the probe pin 49 substantially equal. This eliminates contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), so that the electrical inspection of the semiconductor device 20 can be performed with high accuracy. it can.

  Further, after heating or cooling the semiconductor device stage 17 to a predetermined temperature Tx for inspecting the semiconductor device 20, the displacement amount detecting means 35 detects the displacement amount of the upper surface 17A of the semiconductor device stage 17, and the detected displacement. By performing adjustment so that the upper surface 17A of the semiconductor device stage 17 is substantially horizontal based on the amount, the electrical inspection of the semiconductor device 20 heated or cooled to the predetermined temperature Tx can be accurately performed. .

  In addition, after the semiconductor device stage 17 is heated or cooled to a predetermined temperature Tx for inspecting the semiconductor device 20, the deviation amount detection means 35 detects the deviation amount of the upper surface 23A of the cleaning stage 23, and the detected deviation amount is obtained. Based on the adjustment, the upper surface 23A of the cleaning stage 23 is adjusted to be substantially horizontal, so that even when the cleaning stage 23 is affected by the temperature of the semiconductor device stage 17, a plurality of probes are scraped by the cleaning sheet 25. It becomes possible to make the scraping amount of the tip of the pin 49 substantially equal. This eliminates contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), so that the electrical inspection of the semiconductor device 20 can be performed with high accuracy. it can.

  In the present embodiment, the inspection apparatus 10 provided with the cleaning stage 23 has been described as an example. However, even if the deviation amount detection means 35 of the present embodiment is provided in an inspection apparatus that does not include the cleaning stage 23. Good. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  Further, the deviation amount detection means 35 of the present embodiment may be provided in an inspection apparatus that does not include the temperature control means 18. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  In the present embodiment, the case where the measuring needle 62 is provided in the deviation amount detection unit 35 has been described as an example. However, the measurement is performed on the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23. Even when the child 61 is in direct contact, it is possible to detect the amount of deviation.

  FIG. 4 is a diagram showing an example of a flowchart for explaining the semiconductor device inspection method according to the first embodiment of the present invention.

  Referring to FIG. 4, the case where the semiconductor device 20 heated or cooled to a predetermined temperature Tx is inspected by using the inspection device 10 having the above configuration will be described as an example. An inspection method of the semiconductor device 20 according to the embodiment will be described.

  When the process shown in FIG. 4 is started, in STEP 71, the semiconductor device stage 17 is heated or cooled by the temperature control means 18 so as to reach the temperature at which the semiconductor device 20 is inspected (predetermined temperature Tx).

  Subsequently, in STEP 72, the deviation amount detection means 35 causes the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 to be in a predetermined location (for example, in the case of the semiconductor device stage 17, the center of the upper surface 17A is cleaned. In the case of the stage 23, the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 with respect to the first position in the vertical direction (Y, Y direction) of the center of the upper surface 23A). The shift amount of the second position in the vertical direction (Y, Y direction) of the location is detected. The deviation amount of the upper surface 17A of the semiconductor device stage 17 and the deviation amount of the upper surface 23A of the cleaning stage 23 detected by the deviation amount detection means 35 are transmitted to the tester 12, and the process proceeds to STEP73. In STEP 72, the amount of deviation of the upper surface 23A of the cleaning stage 23 is detected in a state where the cleaning sheet 25 is attached to the upper surface 23A of the cleaning stage 23.

  In STEP 73, adjustment is performed based on the amount of deviation of the upper surface 17A of the semiconductor device stage 17 so that the upper surface 17A of the semiconductor device stage 17 is substantially horizontal, and based on the amount of deviation of the upper surface 23A of the cleaning stage 23. The adjustment is performed so that the upper surface 23A of the cleaning stage 23 is substantially horizontal.

  Subsequently, in STEP 74, the probe pins 49 are cleaned by bringing the tip portions of the plurality of probe pins 49 into contact with the cleaning sheet 25.

  Thus, after adjusting the upper surface 23 </ b> A of the cleaning stage 23 to be substantially horizontal, the plurality of probe pins 49 are cleaned, thereby reducing the scraping amount of the tip portions of the plurality of probe pins 49 to be scraped by the cleaning sheet 25. Since the contact failure between the probe pin 49 and the semiconductor device 20 (specifically, the pad (not shown) of the semiconductor integrated circuit) is eliminated, the electrical inspection of the semiconductor device 20 can be performed. It can be performed with high accuracy.

  Next, in STEP 75, the semiconductor device 20 is fixed on the semiconductor device stage 17. In STEP 76, the temperature control means 18 heats or cools the semiconductor device 20 so that the temperature of the semiconductor device 20 becomes a predetermined temperature Tx.

  Next, in STEP 77, the control unit 12B of the tester 12 determines whether or not the temperature of the semiconductor device 20 has reached a predetermined temperature Tx. When it is determined that the temperature of the semiconductor device 20 has not reached the predetermined temperature Tx (in the case of No), the process returns to STEP 76. When it is determined that the temperature of the semiconductor device 20 has reached the predetermined temperature Tx (in the case of Yes), the process proceeds to STEP 78.

  Next, in STEP 78, an electrical inspection of the semiconductor device 20 is performed based on the inspection conditions stored in the storage unit 12A of the tester 12. Subsequently, in STEP 79, it is determined whether or not the electrical inspection of all the semiconductor integrated circuits provided in the semiconductor device 20 has been completed. If it is determined that the electrical inspection of all the semiconductor integrated circuits provided in the semiconductor device 20 has not been completed (in the case of No), the processing returns to STEP 78. Further, when it is determined that the electrical inspection of all the semiconductor integrated circuits provided in the semiconductor device 20 has been completed (in the case of Yes), the processing ends.

  According to the method for inspecting a semiconductor device according to the present embodiment, the deviation amount detecting means 35 detects the deviation amount of the upper surface 17A of the semiconductor device stage 17, and based on this deviation amount, the semiconductor device stage 17 is detected. By performing adjustment so that the upper surface 17A is substantially horizontal, the probe pin 49 and the semiconductor device 20 (specifically, pads of the semiconductor integrated circuit (not shown)) are used when the semiconductor device 20 is electrically inspected. Therefore, the electrical inspection of the semiconductor device 20 can be performed with high accuracy.

  Further, the upper surface 23A of the cleaning stage 23 is detected by the deviation amount detection means 35, and the upper surface 23A of the cleaning stage 23 is adjusted so as to be substantially horizontal based on the deviation amount. It becomes possible to make the scraping amounts of the tip portions of the plurality of probe pins 49 substantially equal. This eliminates contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), so that the electrical inspection of the semiconductor device 20 can be performed with high accuracy. it can.

  Further, after heating or cooling the semiconductor device stage 17 to a predetermined temperature Tx for inspecting the semiconductor device 20, the displacement amount detecting means 35 detects the displacement amount of the upper surface 17A of the semiconductor device stage 17, and the detected displacement. By performing adjustment so that the upper surface 17A of the semiconductor device stage 17 is substantially horizontal based on the amount, the electrical inspection of the semiconductor device 20 heated or cooled to the predetermined temperature Tx can be accurately performed. .

  In addition, after the semiconductor device stage 17 is heated or cooled to a predetermined temperature Tx for inspecting the semiconductor device 20, the deviation amount detection means 35 detects the deviation amount of the upper surface 23A of the cleaning stage 23, and the detected deviation amount is obtained. Based on the adjustment, the upper surface 23A of the cleaning stage 23 is adjusted to be substantially horizontal, so that even when the cleaning stage 23 is affected by the temperature of the semiconductor device stage 17, a plurality of probes are scraped by the cleaning sheet 25. It becomes possible to make the scraping amount of the tip of the pin 49 substantially equal. This eliminates contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), so that the electrical inspection of the semiconductor device 20 can be performed with high accuracy. it can.

  In the semiconductor device inspection method of the present embodiment, the case where the probe pins 49 are cleaned before the electrical inspection of the semiconductor device 20 is described as an example. However, the number of semiconductor integrated circuits to be inspected is described. If there are many, the probe pin 49 may be cleaned again in STEP 78 and STEP 79. In addition, when the frequency of use of the inspection apparatus 10 is low, it is not always necessary to clean the probe pin 49 before performing an electrical inspection of the semiconductor device 20, for example, after a predetermined period (for example, one month) has elapsed. The probe pin 49 may be cleaned.

  In the semiconductor device inspection method according to the present embodiment, the case where the inspection apparatus 10 including the cleaning stage 23 is used has been described as an example. However, the deviation amount detection unit is added to the inspection apparatus that does not include the cleaning stage 23. 35 may be provided to inspect the semiconductor device 20. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  Furthermore, the semiconductor device 20 may be inspected by providing the deviation amount detection means 35 in an inspection apparatus that does not include the temperature control means 18. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  In the present embodiment, the upper surface 17A of the semiconductor device stage 17 and / or the cleaning stage are arranged so that the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 are substantially horizontal by the controller 12B. Although the inclination of the upper surface 23A of the semiconductor device 23 is adjusted, the inclination of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 is manually operated based on the deviation amount transmitted from the deviation amount detection means 35. May be adjusted.

(Second Embodiment)
FIG. 5 is a sectional view of an inspection apparatus according to the second embodiment of the present invention. In FIG. 5, the same components as those in the inspection apparatus 10 of the first embodiment are denoted by the same reference numerals. FIG. 5 schematically shows a state in which the deviation amount detection means 72 detects the deviation amount of the upper surface 17A of the semiconductor device stage 17.

  Referring to FIG. 5, an inspection apparatus 70 according to the second embodiment includes a tester 12 and a prober 71. The prober 71 is configured in the same manner as the prober 11 except that a deviation amount detection means 72 is provided instead of the deviation amount detection means 35 provided in the prober 11 (see FIG. 1) described in the first embodiment. The

  FIG. 6 is a cross-sectional view of the deviation amount detection means of the second embodiment.

  With reference to FIGS. 5 and 6, the displacement amount detection means 72 will be described. The deviation amount detection means 72 is detachably attached to the probe card attachment part 42. The deviation amount detection means 72 includes a support substrate 73, an input terminal 75, an output terminal 76, support members 77 and 82, support plates 78 and 83, a metal film 84, wirings 85 and 93, and a spring. 87, a measuring needle 88, and measuring needle position restricting members 91 and 92.

  The support substrate 73 is for arranging the input terminal 75, the output terminal 76, and the support member 77. The support substrate 73 has a plate shape, and a recess 95 is formed near the center thereof. The thickness M1 of the support substrate 73 can be set to, for example, 3.2 mm.

  The input terminal 75 is provided on the upper surface 73 </ b> A of the support substrate 73. The input terminal 75 is in contact with the connection pin 44 </ b> A of the contact ring 32. The input terminal 75 is electrically connected to the metal film 84 provided on the support plate 83 via the wiring 85. When the displacement amount detection means 72 detects the displacement amount of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23, a predetermined voltage Vin is applied to the input terminal 75 via the connection pin 44A. Entered.

  The output terminal 76 is provided on the upper surface 73 </ b> A of the support substrate 73. The output terminal 76 is in contact with the connection pin 44B of the contact ring 32. The output terminal 76 is electrically connected to the measuring needle position restricting member 92 having conductivity through a wiring 93. When the predetermined voltage Vin is input to the input terminal 75 in a state where the metal film 84 and the measuring needle position restricting member 92 are in contact with each other, the output terminal 76 outputs the predetermined voltage Vin, and the output The result is transmitted to the tester 12. Further, in a state where the metal film 84 and the measurement needle position restricting member 92 are not in contact (a state where the measurement needle position restricting member 92 is separated from the metal film 84), a predetermined voltage Vin is input to the input terminal 75. When this is done, no voltage is output from the output terminal 76.

  One end of the support member 77 is connected to the lower surface 73 </ b> B of the support substrate 73, and the other end is connected to the upper surface 78 </ b> A of the support plate 78. The support member 77 is a member for supporting the support plate 78. As a material of the support member 77, for example, ceramic can be used. The thickness M2 of the support substrate 77 can be set to 1 mm, for example.

  The support plate 78 is disposed between the support member 77 and the support member 83 and is connected to the support members 77 and 82. The support plate 78 has a through hole 81 near its center. The through hole 81 is for inserting the measuring needle 88. A distance D1 from the bottom surface 95A of the recess 95 to the top surface 78A of the support plate 78 can be set to 3 mm, for example.

  One end of the support member 82 is connected to the lower surface 78 </ b> B of the support plate 78, and the other end is connected to the upper surface 83 </ b> A of the support plate 83. The support member 82 is a member for supporting the support plate 83. The height H1 of the support substrate 82 can be set to 2 mm, for example.

  The support plate 83 is provided below the support plate 78. An upper surface 83 </ b> A of the support plate 83 is connected to the support member 82. The support plate 83 has a through hole 83B near the center thereof. The through hole 83B is for inserting the measuring needle 88. The thickness M3 of the support plate 83 can be set to 1 mm, for example.

  The metal film 84 covers the side wall of the through hole 83B and is provided across both surfaces 83A and 83B of the support plate 83. The metal film 84 is electrically connected to the input terminal 75 through the wiring 85. The metal film 84 can be formed by, for example, a plating method.

  The wiring 85 has one end connected to the input terminal 75 and the other end connected to the metal film 84. The wiring 85 is for electrically connecting the input terminal 75 and the metal film 84.

  The spring 87 is provided between the bottom surface 95 </ b> A of the recess 95 and the measuring needle 88. One end of the spring 87 is connected to the bottom surface 95 </ b> A of the recess 95, and the other end is connected to the end of the measuring needle 88. The spring 87 is for pressing the measuring needle 88 downward.

  The measurement needle 88 has a needle body 88A and a contact portion 88B. The needle body 88A is disposed so as to pass through the through holes 81 and 83B. The upper end portion of the needle main body 88 </ b> A is connected to the spring 87. The contact portion 88B is provided at the lower end portion of the needle main body 88A. The contact portion 88B has a rod shape with a smaller diameter than the needle main body 88A. The contact portion 88B is configured to detect the displacement amount of the upper surface 17A of the semiconductor device stage 17 and / or the displacement amount of the upper surface 23A of the cleaning stage 23 when the displacement amount detection means 72 detects the displacement amount of the upper surface 17A of the semiconductor device stage 17 and / or. Alternatively, it is a portion that directly contacts the upper surface 23A of the cleaning stage 23. The diameter R2 of the contact portion 88B can be set to 20 μm to 50 μm, for example. For example, ReW (rhenium tungsten) or W can be used as the material of the contact portion 88B.

  As described above, since the contact portion 88B having the diameter R2 smaller than the diameter of the needle body 88A is provided in the needle body 88A perpendicularly to the stage 17 for semiconductor device, the accuracy of the overdrive amount is improved. The amount can be detected accurately.

  The measuring needle 88 configured as described above moves upward after the contact portion 88B contacts the upper surface 17A of the semiconductor device stage 17 or the upper surface 23A of the cleaning stage 23.

  The measuring needle position restricting member 91 is provided on the needle body 88 </ b> A on the side connected to the spring 87. The measuring needle position restricting member 91 is a member for determining the distance D2 from the lower surface 73A of the support substrate 73 to the tip of the contact portion 88B. The distance D2 can be 6 mm, for example. As a material of the measurement needle position regulating member 91, for example, ceramic can be used.

  The measuring needle position restricting member 92 is provided on the needle main body 88A on the side where the contact portion 88B is provided. The measurement needle position restricting member 92 is disposed between the support plate 78 and the support plate 83. The measuring needle position restricting member 92 moves integrally with the measuring needle 88 when the measuring needle 88 moves in the Y and Y directions. The measuring needle position restricting member 92 has conductivity. The measuring needle position restricting member 92 is connected to the wiring 93 and is electrically connected to the output terminal 76 via the wiring 93.

  The measuring needle position restricting member 92 has a function like a changeover switch for switching whether or not to output a predetermined voltage Vin input to the input terminal 75 to the output terminal 76. In a state where the measurement needle position restricting member 92 and the metal film 84 are in contact with each other, a predetermined voltage Vin input to the input terminal 75 is output to the output terminal 76, and the measurement needle position restricting member 92 and the metal film 84 are output. In a state where the two are separated from each other, the predetermined voltage Vin input to the input terminal 75 is not output to the output terminal 76. In this way, the deviation amount detection means 72 determines whether the contact portion 88B is the upper surface 17A of the semiconductor device stage 17 or not depending on whether or not the predetermined voltage Vin input from the output terminal 76 to the input terminal 75 is output. It is determined whether or not the upper surface 23A of the cleaning stage 23 has been contacted.

  One end of the wiring 93 is connected to the output terminal 76, and the other end is connected to the measuring needle position restricting member 92. The wiring 93 is for electrically connecting the output terminal 76 and the measuring needle position restricting member 92.

  The deviation amount detecting means 72 configured as described above is a predetermined location on the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 (for example, in the case of the semiconductor device stage 17, the center of the upper surface 17A). In the case of the cleaning stage 23, the upper surface 17A of the semiconductor device stage 17 with respect to the first position in the vertical direction (Y, Y direction) in the center of the upper surface 23A) and / or another location (usually the upper surface 23A of the cleaning stage 23). ), The amount of deviation of the second position in the vertical direction (Y, Y direction) is detected. The deviation amount detection means 72 transmits the detected deviation amount of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 to the tester 12.

  The tester 12 determines the upper surface 17A of the semiconductor device stage 17 and / or the cleaning stage based on the displacement amount of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 transmitted from the displacement amount detection means 72. Adjustment is performed so that the upper surface 23A of the plate 23 is substantially horizontal.

  Also in the inspection apparatus 70 of the second embodiment provided with the deviation amount detection means 72 having the above-described configuration, the same effect as that of the inspection apparatus 10 of the first embodiment can be obtained. Specifically, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 is performed with high accuracy. be able to.

  In the present embodiment, the inspection apparatus 70 provided with the cleaning stage 23 has been described as an example. However, even if the deviation amount detection means 72 of the present embodiment is provided in an inspection apparatus that does not include the cleaning stage 23. Good. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  Further, the deviation amount detection means 72 of the present embodiment may be provided in an inspection apparatus that does not include the temperature control means 18. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  FIG. 7 is a diagram showing an example of a flowchart for explaining a semiconductor device inspection method according to the second embodiment of the present invention.

  A semiconductor device inspection method according to the second embodiment of the present invention will be described with reference to FIG. In the present embodiment, the following description will be given by taking as an example the case where the inspection apparatus 70 of the second embodiment is used to perform an electrical inspection of the semiconductor device 20 heated or cooled to a predetermined temperature Tx. Do.

  When the process shown in FIG. 7 is started, in STEP 101, the semiconductor device stage 17 is heated or cooled by the temperature control means 18 so that the temperature of the semiconductor device 20 is inspected (predetermined temperature Tx).

  Subsequently, in STEP 102, the shift amount detecting means 72 detects the shift amount of the upper surface 17A of the semiconductor device stage 17 and the shift amount of the upper surface 23A of the cleaning stage 23.

  Specifically, for example, in the state where the metal film 84 and the measurement needle position restricting member 92 are in contact with each other (the state shown in FIG. 6), a voltage of 5 V is applied to the input terminal 75 as the predetermined voltage Vin. Apply. At this time, since the metal film 84 and the measurement needle position restricting member 92 are in contact with each other, a voltage of 5 V is output from the output terminal 76. Next, a first position in the vertical direction (Y, Y direction) of a predetermined location on the upper surface 17A of the semiconductor device stage 17 is set as a reference position, and the other position on the upper surface 17A of the semiconductor device stage 17 from the reference position. The semiconductor device stage 17 is moved in increments of 1 μm in the vertical direction (Y, Y direction) within a moving range of ± 50 μm in the vertical direction (Y, Y direction).

  When the upper surface 17A of the semiconductor device stage 17 and the contact portion 88B come into contact with each other, the measuring needle 88 is moved upward, the measuring needle position restricting member 92 is separated from the metal film 84, and the output terminal A voltage of 76 to 5 V is not output. The semiconductor device from the second position in the vertical direction on the upper surface 17A of the stage 17A for the semiconductor device when the voltage of 5V is no longer output from the output terminal 76 and the reference position (first position). The amount of deviation with respect to the reference position (first position) of the upper surface 17A of the stage 17 is detected. The amount of deviation of the upper surface 23A of the cleaning stage 23 is also detected by a similar method.

  When the deviation amount detecting means 72 detects the deviation amount of the upper surface 17A of the semiconductor device stage 17 and the deviation amount of the upper surface 23A of the cleaning stage 23, the deviation amount detection means 72 transmits the detected deviation amount to the tester 12, and the process proceeds to STEP103. .

  In STEP 102, the amount of deviation of the upper surface 23A of the cleaning stage 23 is detected in a state where the cleaning sheet 25 is attached to the upper surface 23A of the cleaning stage 23.

  Next, in STEP 103, based on the amount of deviation of the upper surface 17A of the semiconductor device stage 17, adjustment is performed so that the upper surface 17A of the semiconductor device stage 17 is substantially horizontal, and the amount of deviation of the upper surface 23A of the cleaning stage 23 is adjusted. Based on this, adjustment is performed so that the upper surface 23A of the cleaning stage 23 is substantially horizontal. Thereafter, the process proceeds to STEP 104.

  In STEP 104, the displacement amount detecting means 72 attached to the probe card holder 28 is removed, and the probe card 31 (see FIG. 1) described in the first embodiment is attached to the probe card holder 28.

  In STEP 105, the probe pins 49 are cleaned by bringing the tips of the plurality of probe pins 49 into contact with the cleaning sheet 25.

  Thus, after adjusting the upper surface 23 </ b> A of the cleaning stage 23 to be substantially horizontal, the plurality of probe pins 49 are cleaned, thereby reducing the scraping amount of the tip portions of the plurality of probe pins 49 to be scraped by the cleaning sheet 25. It becomes possible to make them substantially equal. This eliminates contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), so that the electrical inspection of the semiconductor device 20 can be performed with high accuracy. it can.

  Next, in STEP 106, the semiconductor device 20 to be inspected is fixed on the semiconductor device stage 17. In STEP 107, the semiconductor device 20 is heated or cooled by the temperature control means 18 so that the temperature of the semiconductor device 20 becomes a predetermined temperature Tx.

  Next, in STEP 108, the control unit 12B of the tester 12 determines whether or not the temperature of the semiconductor device 20 has reached a predetermined temperature Tx. When it is determined that the temperature of the semiconductor device 20 has not reached the predetermined temperature Tx (No), the process returns to STEP 107. If it is determined that the temperature of the semiconductor device 20 has reached the predetermined temperature Tx (Yes), the process proceeds to STEP 109.

  In STEP 109, the semiconductor device 20 is electrically inspected based on the inspection conditions stored in the storage unit 12A of the tester 12. Subsequently, in STEP 110, it is determined whether or not the electrical inspection of all the semiconductor integrated circuits provided in the semiconductor device 20 has been completed. When it is determined that the electrical inspection of all the semiconductor integrated circuits provided in the semiconductor device 20 has not been completed (in the case of No), the processing returns to STEP 109. Further, when it is determined that the electrical inspection of all the semiconductor integrated circuits provided in the semiconductor device 20 has been completed (in the case of Yes), the processing ends.

  According to the method for inspecting a semiconductor device according to the present embodiment, the deviation amount detecting means 72 detects the deviation amount of the upper surface 17A of the semiconductor device stage 17, and based on this deviation amount, the semiconductor device stage 17 is detected. By performing adjustment so that the upper surface 17A is substantially horizontal, the probe pin 49 and the semiconductor device 20 (specifically, pads of the semiconductor integrated circuit (not shown)) are used when the semiconductor device 20 is electrically inspected. Therefore, the electrical inspection of the semiconductor device 20 can be performed with high accuracy.

  Further, the upper surface 23A of the cleaning stage 23 is detected by the deviation amount detection means 72, and the upper surface 23A of the cleaning stage 23 is adjusted to be substantially horizontal based on the deviation amount, thereby removing the surface by the cleaning sheet 25. It becomes possible to make the scraping amounts of the tip portions of the plurality of probe pins 49 substantially equal. This eliminates contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), so that the electrical inspection of the semiconductor device 20 can be performed with high accuracy. it can.

  Further, after the semiconductor device stage 17 is heated or cooled to a predetermined temperature Tx for inspecting the semiconductor device 20, the displacement amount detecting means 72 detects the displacement amount of the upper surface 17A of the semiconductor device stage 17, and the detected displacement. By performing adjustment so that the upper surface 17A of the semiconductor device stage 17 is substantially horizontal based on the amount, the electrical inspection of the semiconductor device 20 heated or cooled to the predetermined temperature Tx can be accurately performed. .

  In addition, after the semiconductor device stage 17 is heated or cooled to a predetermined temperature Tx for inspecting the semiconductor device 20, the displacement amount detection means 72 detects the displacement amount of the upper surface 23 </ b> A of the cleaning stage 23, and the detected displacement amount is obtained. Based on the adjustment, the upper surface 23A of the cleaning stage 23 is adjusted to be substantially horizontal, so that even when the cleaning stage 23 is affected by the temperature of the semiconductor device stage 17, a plurality of probes are scraped by the cleaning sheet 25. It becomes possible to make the scraping amount of the tip portion of the pin 49 substantially equal. This eliminates contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), so that the electrical inspection of the semiconductor device 20 can be performed with high accuracy. it can.

  In the semiconductor device inspection method of the present embodiment, the case where the probe pins 49 are cleaned before the electrical inspection of the semiconductor device 20 is described as an example. However, the number of semiconductor integrated circuits to be inspected is described. If there are many, the probe pins 49 may be cleaned again in the steps of STEP 109 and 110. In addition, when the frequency of use of the inspection apparatus 70 is low, it is not always necessary to clean the probe pins 49 before performing an electrical inspection of the semiconductor device 20, for example, after a predetermined period (for example, one month) has elapsed. The probe pin 49 may be cleaned.

  Further, in the semiconductor device inspection method of the present embodiment, the case where the inspection apparatus 70 including the cleaning stage 23 is used has been described as an example. However, the present embodiment is applied to an inspection apparatus that does not include the cleaning stage 23. The semiconductor device 20 may be inspected by providing a deviation amount detecting means 72. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  Furthermore, the semiconductor device 20 may be inspected by providing the deviation amount detecting means 72 of the present embodiment in an inspection apparatus that does not include the temperature control means 18. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  In this embodiment, the tester 12 causes the upper surface 17A of the semiconductor device stage 17 and / or the cleaning stage 23 to be substantially horizontal so that the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 are substantially horizontal. Although the inclination of the upper surface 23A of the semiconductor device is adjusted, the inclination of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 is manually operated based on the deviation amount transmitted from the deviation amount detection means 75. You may adjust.

(Third embodiment)
FIG. 8 is a sectional view of an inspection apparatus according to the third embodiment of the present invention. In FIG. 8, the same components as those in the inspection apparatus 70 according to the second embodiment are denoted by the same reference numerals. FIG. 8 schematically shows a state in which the deviation amount detection unit 122 detects the deviation amount of the upper surface 17A of the semiconductor device stage 17.

  Referring to FIG. 8, the inspection apparatus 120 according to the third embodiment includes a tester 12 and a prober 121. The prober 121 is configured in the same manner as the prober 71 of the second embodiment except that a deviation amount detection unit 122 is provided instead of the deviation amount detection unit 72 described in the second embodiment.

  FIG. 9 is a cross-sectional view of the deviation amount detection means of the third embodiment, and FIG. 10 is a plan view of the deviation amount detection means of the third embodiment. FIG. 11 is a diagram schematically showing a deviation amount detecting means after the upper surface of the stage or the upper surface of the cleaning stage and the measuring needle are in contact with each other. 9 to 11, the same reference numerals are given to the same components as the deviation amount detection means 72 described in the second embodiment.

  With reference to FIGS. 9 and 10, the displacement amount detection means 122 will be described. The deviation amount detection means 122 is detachably attached to the probe card attachment portion 42 (see FIG. 8). The deviation amount detection means 122 includes a support substrate 123, an input terminal 75, an output terminal 76, support members 77 and 82, support plates 78 and 83, a measuring needle 88, and a first flexible member. It has a member 126, wirings 127 and 132, a second flexible member 129, a light emitting diode 131, and measurement needle position restricting members 135 and 136.

  The support substrate 123 is for arranging the input terminal 75, the output terminal 76, the support member 77, and the like. The support substrate 123 has a plate shape and has a through portion 124 near the center thereof. The penetrating portion 124 is a space for arranging the first and second flexible members 126 and 129. The thickness M4 of the support substrate 123 can be set to, for example, 3.2 mm.

  The input terminal 75 is provided on the upper surface 123 </ b> A of the support substrate 123. The input terminal 75 is electrically connected to the measuring needle position restricting member 135 having conductivity. The input terminal 75 is in contact with the connection pin 44A of the contact ring 32 (see FIG. 8). When the shift amount detection unit 122 detects the shift amount of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23, a predetermined voltage Vin is applied to the input terminal 75 via the connection pin 44A. Entered.

  The output terminal 76 is provided on the upper surface 123 </ b> A of the support substrate 123. The output terminal 76 is in contact with the connection pin 44B of the contact ring 32 (see FIG. 8). The output terminal 76 is electrically connected to the second flexible member 129 and the light emitting diode 131. The output terminal 76 has a predetermined voltage Vin when a predetermined voltage Vin is applied to the input terminal 75 in a state where the first flexible member 126 and the second flexible member 129 are in contact with each other. The voltage Vin is output. This output result is transmitted to the tester 12. In addition, when a predetermined voltage Vin is applied to the input terminal 75 in a state where the first flexible member 126 and the second flexible member 129 are separated from each other, the voltage is applied to the output terminal 76. Not output.

  One end of the support member 77 is connected to the lower surface 123 </ b> B of the support substrate 123, and the other end is connected to the upper surface 78 </ b> A of the support plate 78. The thickness M2 of the support member 77 can be set to 1 mm, for example.

  The support plate 78 is disposed between the support member 77 and the support member 83 and is connected to the support members 77 and 82. The support plate 78 has a through hole 81 near its center.

  One end of the support member 82 is connected to the lower surface 78 </ b> B of the support plate 78, and the other end is connected to the upper surface 83 </ b> A of the support plate 83. The height H1 of the support substrate 82 can be set to 2 mm, for example.

  The support plate 83 is provided below the support plate 78. An upper surface 83 </ b> A of the support plate 83 is connected to the support member 82. The support plate 83 has a through hole 83B near the center thereof. The thickness M3 of the support plate 83 can be set to 1 mm, for example.

  The measurement needle 88 has a needle body 88A and a contact portion 88B. The needle body 88A is disposed so as to pass through the through holes 81 and 84A. The upper end of the needle main body 88A is connected to the measurement needle position restricting member 135. The contact portion 88B is provided at the lower end portion of the needle main body 88A. The contact portion 88B is configured to detect the displacement amount of the upper surface 17A of the semiconductor device stage 17 and / or the displacement amount of the upper surface 23A of the cleaning stage 23 when the displacement amount detection unit 122 detects the displacement amount of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 17A. Alternatively, it is a portion that directly contacts the upper surface 23 </ b> A of the cleaning stage 23. The diameter R2 of the contact portion 88B can be set to 20 μm to 50 μm, for example. For example, ReW (rhenium tungsten) or W can be used as the material of the contact portion 88B.

  As described above, since the contact portion 88B having the diameter R2 smaller than the diameter of the needle body 88A is provided in the needle body 88A perpendicularly to the stage 17 for semiconductor device, the accuracy of the overdrive amount is improved. The amount can be detected accurately.

  The measuring needle 88 configured as described above moves upward after the contact portion 88B contacts the upper surface 17A of the semiconductor device stage 17 or the upper surface 23A of the cleaning stage 23.

  One end of the first flexible member 126 is fixed to the upper surface 123 </ b> A of the support substrate 123, and the other end is fixed to the measurement needle position restricting member 135. The first flexible member 126 is disposed above the second flexible member 129. The first flexible member 126 is a member having flexibility. The first flexible member 126 moves integrally with the measurement needle 88 when the measurement needle 88 is moved in the Y and Y directions. The first flexible member 126 has conductivity. The first flexible member 126 is electrically connected to the input terminal 75 through the wiring 127.

  In a state where the measurement needle position restricting member 135 is in contact with the support plate 78 (the state shown in FIG. 9), the first flexible member 126 is in contact with the second flexible member 129, and The second flexible member 129 is electrically connected. When the measurement needle position restricting member 135 is separated above the support plate 78, the first flexible member 126 is separated from the second flexible member 129 (the state shown in FIG. 11), and the first flexible member 126 is separated from the first flexible member 126. The flexible member 126 and the second flexible member 129 are insulated.

  As described above, the first flexible member 126 functions as a switch for selecting whether or not to apply the predetermined voltage Vin input to the input terminal 75 to the second flexible member 129. Play.

  The wiring 127 is provided on the upper surface 123 </ b> A of the support substrate 123. The wiring 127 has one end connected to the input terminal 75 and the other end connected to the first flexible member 126.

  One end of the second flexible member 129 is connected to the output terminal 76, and the other end is disposed below the first flexible member 126. The second flexible member 129 is a flexible member and has conductivity. The second flexible member 129 is electrically connected to the light emitting diode 131 through the wiring 132.

  The light emitting diode 131 is provided on the upper surface 123 </ b> A of the support substrate 123. The light emitting diode 131 is electrically connected to the output terminal 76 via the wiring 132. The light emitting diode 131 is in a state in which the upper surface 17A of the semiconductor device stage 17 or the upper surface 23A of the cleaning stage 23 and the contact portion 88B are separated, that is, the first flexible member 126 and the second flexible member. 129 contacts and emits light when a predetermined voltage Vin is applied to the light emitting diode 131. The light emitting diode 131 is in a state where the upper surface 17A of the semiconductor device stage 17 or the upper surface 23A of the cleaning stage 23 and the contact portion 88B are in contact, that is, the first flexible member 126 and the second flexible member. When it is separated from 129, no light is emitted.

  Thus, by providing the light emitting diode 131 in the deviation amount detection means 122, the operator visually recognizes that the upper surface 17A of the semiconductor device stage 17 or the upper surface 23A of the cleaning stage 23 and the contact portion 88B are in contact with each other. can do.

  The wiring 132 is provided on the upper surface 123 </ b> A of the support substrate 123. The wiring 132 electrically connects the output terminal 76 and the light emitting diode 131.

  The measuring needle position restricting member 135 is provided at the upper end of the needle main body 88A. A first flexible member 126 is connected to the upper part of the measurement needle position restricting member 135. The measuring needle position regulating member 135 moves integrally with the needle body 88A when the needle body 88A moves in the Y and Y directions. Further, the measurement needle position restricting member 135 moves upward (the state shown in FIG. 11) from the state where the support plate 78 and the measurement needle position restricting member 135 are in contact (the state shown in FIG. 9). Because the first flexible member 126 is separated from the second flexible member 129, the first flexible member 126 and the second flexible member 129 are insulated. The measuring needle position restricting member 135 defines a distance D2 from the lower surface 123B of the support substrate 123 to the tip of the contact portion 88B, and the distance D2 can be set to 6 mm, for example.

  The measurement needle position restricting member 136 is provided on the needle main body 88A on the side where the contact portion 88B is provided. The measurement needle position restricting member 136 is disposed between the support plate 78 and the support plate 83. The measurement needle position restricting member 136 moves integrally with the measurement needle 88 when the measurement needle 88 moves in the Y and Y directions.

  The deviation amount detection means 122 configured as described above is a predetermined location on the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 (for example, in the case of the semiconductor device stage 17, the center of the upper surface 17A). In the case of the cleaning stage 23, the upper surface 17A of the semiconductor device stage 17 and / or another location of the upper surface 23A of the cleaning stage 23 with respect to the first position in the vertical direction (Y, Y direction) of the upper surface 23A (usually normal) , A plurality of locations) of the second position in the vertical direction (Y, Y direction) is detected. The deviation amount detection means 122 transmits the detected deviation amount of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 to the tester 12.

  The tester 12 adjusts the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 to be substantially horizontal based on the deviation amount transmitted from the deviation amount detection means 122.

  Also in the inspection apparatus 120 including the deviation amount detection unit 122 configured as described above, the same effect as that of the inspection apparatus 10 of the first embodiment can be obtained. Specifically, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 is performed with high accuracy. be able to.

  In this embodiment, the inspection apparatus 120 provided with the cleaning stage 23 has been described as an example. However, the deviation amount detection unit 122 of this embodiment may be provided in an inspection apparatus that does not include the cleaning stage 23. Good. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  Further, the deviation amount detection means 122 of the present embodiment may be provided in an inspection apparatus that does not include the temperature control means 18. Also in this case, since there is no contact failure between the probe pin 49 and the semiconductor device 20 (specifically, a pad (not shown) of the semiconductor integrated circuit), the electrical inspection of the semiconductor device 20 can be accurately performed. it can.

  Further, when the semiconductor device 20 heated or cooled to the predetermined temperature Tx is inspected using the inspection device 120 described above, it is performed by the same method as the flow shown in FIG. 7 described in the second embodiment. Thus, the same effect as the inspection method of the semiconductor device 20 of the second embodiment can be obtained.

  Further, in the present embodiment, the case where the light emitting diode 131 is provided in the deviation amount detecting unit 122 has been described as an example, but the same effect can be obtained in any amount detecting unit 122 that does not include the light emitting diode 131. Can do.

In this embodiment, the tester 12 causes the upper surface 17A of the semiconductor device stage 17 and / or the cleaning stage 23 to be substantially horizontal so that the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 are substantially horizontal. Although the inclination of the upper surface 23A of the semiconductor device is adjusted, the inclination of the upper surface 17A of the semiconductor device stage 17 and / or the upper surface 23A of the cleaning stage 23 is manually operated based on the deviation amount transmitted from the deviation amount detection means 122. The preferred embodiment of the present invention has been described in detail above, but the present invention is not limited to such a specific embodiment, and the gist of the present invention described in the claims Various modifications and changes can be made within the range.

  INDUSTRIAL APPLICABILITY The present invention can be applied to a semiconductor device inspection method using an inspection apparatus that includes a semiconductor device stage that is configured to be fixed and movable, and a cleaning stage that cleans probe pins. .

It is sectional drawing of the inspection apparatus which concerns on the 1st Embodiment of this invention. It is a figure which shows the measurement part of the deviation | shift amount detection means of 1st Embodiment. It is the figure which showed typically a mode that the deviation | shift amount detection means of 1st Embodiment has detected the deviation | shift amount of the upper surface of a stage. It is a figure which shows an example of the flowchart for demonstrating the inspection method of the semiconductor device which concerns on the 1st Embodiment of this invention. It is sectional drawing of the inspection apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing of the deviation | shift amount detection means of 2nd Embodiment. It is a figure which shows an example of the flowchart for demonstrating the test | inspection method of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is sectional drawing of the inspection apparatus which concerns on the 3rd Embodiment of this invention. It is sectional drawing of the deviation | shift amount detection means of 3rd Embodiment. It is a top view of the deviation | shift amount detection means of 3rd Embodiment. It is the figure which showed typically the deviation | shift amount detection means after the upper surface of a stage or the upper surface of a cleaning stage, and the measuring needle contact. It is sectional drawing of the conventional inspection apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,70,120 Inspection apparatus 11,71,121 Prober 12 Tester 12A Memory | storage part 12B Control part 14 Housing | casing 15,21,53 Drive device 16,22,54 Support body 17 Semiconductor device stage 17A, 23A, 73A, 78A , 83A, 123A Upper surface 18 Temperature control means 23 Cleaning stage 25 Cleaning sheet 26 Head plate 27 Holder support 28 Probe card holder 31 Probe card 32 Contact ring 33 Test head 35, 72, 122 Deviation amount detection means 37 Head plate body 37A, 73B, 78B, 132B Lower surface 38 Contact ring mounting part 41 Holder main body 42 Probe card mounting part 43 Contact ring main body 44A, 44B, 45A, 45B Connection pin 47, 73 Support base Plate 48A, 48B Wiring pattern 49 Probe pin 51A, 51B, 81, 83B Through hole 55 Measuring section 57 Measuring section main body 58 Stem 59 Spindle 61 Measuring element 62 Measuring needle 75 Input terminal 76 Output terminal 77, 82 Support member 78 , 83 Support plate 84 Metal film 85, 93, 127, 132 Wiring 88 Measuring needle 88 A Needle body 88 B Contact portion 87 Spring 91, 92, 135, 136 Measuring needle position restricting member 95 Recessed portion 95 A Bottom surface 124 Through portion 126 First Flexible member 129 Second flexible member 131 Light emitting diode D1, D2 Distance H1 Height M1-M4 Thickness R1, R2 Diameter

Claims (4)

A stage for a semiconductor device that is configured to be movable while fixing the semiconductor device;
A cleaning stage for cleaning the probe pins of the probe card;
The vertical position of the upper surface of the semiconductor device stage and / or the other position of the upper surface of the cleaning stage with respect to a first vertical position of a predetermined position on the upper surface of the semiconductor device stage and / or the upper surface of the cleaning stage. A displacement amount detecting means for detecting a displacement amount of a second position in the direction, and a semiconductor device inspection method using an inspection apparatus comprising:
A method for inspecting a semiconductor device, comprising: adjusting an upper surface of the semiconductor device stage and / or an upper surface of the cleaning stage to be substantially horizontal based on the displacement amount detected by the displacement amount detection means. . The inspection apparatus includes a temperature control unit that is provided on the semiconductor device stage and heats or cools the semiconductor device to a predetermined temperature.
2. The method of inspecting a semiconductor device according to claim 1, wherein the deviation amount detecting means detects the deviation amount while holding the semiconductor device stage at the predetermined temperature.   3. The semiconductor device inspection method according to claim 1, wherein the inspection of the semiconductor device is performed after the upper surface of the semiconductor device stage and / or the upper surface of the cleaning stage is substantially horizontal.   4. The semiconductor device inspection method according to claim 1, wherein the cleaning of the probe pin is performed after an upper surface of the cleaning stage is made substantially horizontal.

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