JP2007180640A5 - - Google Patents

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Publication number
JP2007180640A5
JP2007180640A5 JP2005373808A JP2005373808A JP2007180640A5 JP 2007180640 A5 JP2007180640 A5 JP 2007180640A5 JP 2005373808 A JP2005373808 A JP 2005373808A JP 2005373808 A JP2005373808 A JP 2005373808A JP 2007180640 A5 JP2007180640 A5 JP 2007180640A5
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JP
Japan
Prior art keywords
node
voltage
conductivity type
transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005373808A
Other languages
English (en)
Japanese (ja)
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JP2007180640A (ja
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Publication date
Application filed filed Critical
Priority to JP2005373808A priority Critical patent/JP2007180640A/ja
Priority claimed from JP2005373808A external-priority patent/JP2007180640A/ja
Publication of JP2007180640A publication Critical patent/JP2007180640A/ja
Publication of JP2007180640A5 publication Critical patent/JP2007180640A5/ja
Withdrawn legal-status Critical Current

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JP2005373808A 2005-12-27 2005-12-27 電圧生成回路、レギュレータ回路及び集積回路装置 Withdrawn JP2007180640A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005373808A JP2007180640A (ja) 2005-12-27 2005-12-27 電圧生成回路、レギュレータ回路及び集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005373808A JP2007180640A (ja) 2005-12-27 2005-12-27 電圧生成回路、レギュレータ回路及び集積回路装置

Publications (2)

Publication Number Publication Date
JP2007180640A JP2007180640A (ja) 2007-07-12
JP2007180640A5 true JP2007180640A5 (cg-RX-API-DMAC10.html) 2009-02-12

Family

ID=38305410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005373808A Withdrawn JP2007180640A (ja) 2005-12-27 2005-12-27 電圧生成回路、レギュレータ回路及び集積回路装置

Country Status (1)

Country Link
JP (1) JP2007180640A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5793979B2 (ja) * 2011-06-14 2015-10-14 ミツミ電機株式会社 レギュレータ用半導体集積回路
CN115047930B (zh) * 2022-05-26 2024-05-17 南京理工大学 一种带隙基准电路
CN116048174B (zh) * 2023-03-01 2024-08-30 上海南芯半导体科技股份有限公司 一种缓冲电路和低压差线性稳压器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03234117A (ja) * 1990-02-08 1991-10-18 Mitsubishi Electric Corp 半導体集積回路
JPH0433408A (ja) * 1990-05-30 1992-02-04 Hitachi Ltd 半導体集積回路装置
JP2944243B2 (ja) * 1991-04-15 1999-08-30 日本電気株式会社 半導体集積回路
JP2765319B2 (ja) * 1991-11-15 1998-06-11 日本電気株式会社 定電圧回路
KR100253645B1 (ko) * 1996-09-13 2000-04-15 윤종용 기준 전압 발생 회로
KR100587064B1 (ko) * 2003-12-08 2006-06-07 주식회사 하이닉스반도체 가변 구동 전압을 갖는 오실레이타
JP4450279B2 (ja) * 2004-04-20 2010-04-14 株式会社ルネサステクノロジ 半導体集積回路装置

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