JP2007173830A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2007173830A JP2007173830A JP2006344292A JP2006344292A JP2007173830A JP 2007173830 A JP2007173830 A JP 2007173830A JP 2006344292 A JP2006344292 A JP 2006344292A JP 2006344292 A JP2006344292 A JP 2006344292A JP 2007173830 A JP2007173830 A JP 2007173830A
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- light emitting
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- 239000004020 conductor Substances 0.000 claims abstract description 15
- 238000010521 absorption reaction Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000407 epitaxy Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】電源に接続するための2つの導電体(100,101)が設けられたランド(10)と、前記ランドに設置され前記2つの導電体と電気的に接続する発光素子(11)と、及び発光素子と電気的に接続する少なくとも1つの補正素子(12)と、を含む発光装置(1)において、前記発光素子は前記2つの導電体が電源に接続した後に光源を提供するためのものであり、少なくとも1つの補正素子により、前記発光素子に温度補償、電圧補正及びサージ吸収のうちに少なくとも1つの効果を持たせる。
【選択図】図2
Description
10 ランド
11 発光素子
12 補正素子
13 基板
14 導電線路
100、101 導電体
110 交流型発光ダイオードのチップ
Claims (25)
- 発光装置であって、
電源に接続されるための2つの導電体が設けられたランドと、
前記ランドに載置され、前記2つの導電体と電気的に接続され、且つ、この2つの導電体が電源に接続された後に光源を提供するための発光素子と、
前記発光素子と電気的に接続され、前記発光素子が電源に接続された後に、前記発光素子に温度補償、電圧補正及びサージ吸収のうち少なくとも1つの効果を提供するための少なくとも一つの補正素子と、を含むことを特徴とする発光装置。 - 前記ランドは、搭載部材からなることを特徴とする請求項1に記載の発光装置。
- 前記2つの導電体は、リードフレームにより形成されることを特徴とする請求項1に記載の発光装置。
- 前記発光素子は、複数の交流型発光ダイオード(AC LED)のチップからなることを特徴とする請求項1に記載の発光装置。
- 前記発光素子は、複数の直流型発光ダイオード(DC LED)のチップからなることを特徴とする請求項1に記載の発光装置。
- 前記発光素子は、単一の波長を有することを特徴とする請求項1に記載の発光装置。
- 前記発光素子は、少なくとも2つの波長を有することを特徴とする請求項1に記載の発光装置。
- 前記発光素子が電源が投入された後に提供する光源は、可視光であることを特徴とする請求項1に記載の発光装置。
- 前記発光素子が電源が投入された後に提供する光源は、不可視光であることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、前記発光素子と電気的に直列に接続されることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、前記発光素子と電気的に並列に接続されることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、温度補償素子からなることを特徴とする請求項1に記載の発光装置。
- 前記温度補償素子は、正の温度係数を有する抵抗補償素子からなることを特徴とする請求項12に記載の発光装置。
- 前記温度補償素子は、負の温度係数を有する抵抗補償素子からなることを特徴とする請求項12に記載の発光装置。
- 前記補正素子は、電圧補正素子からなることを特徴とする請求項1に記載の発光装置。
- 前記電圧補正素子は、電圧ドロップを吸収することが可能な素子からなることを特徴とする請求項15に記載の発光装置。
- 前記補正素子は、サージ吸収素子からなることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、温度補償、電圧補正及びサージ吸収のうち少なくともいずれか2つの機能を有する素子からなることを特徴とする請求項1に記載の発光装置。
- 前記温度補償機能は、正温度係数の補償機能であることを特徴とする請求項18に記載の発光装置。
- 前記温度補償機能は、負温度係数の補償機能であることを特徴とする請求項18に記載の発光装置。
- 前記少なくとも1つの補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記少なくとも1つの補正素子が基板に接合され、次に前記発光素子と一体的に実装されることを特徴とする請求項1に記載の発光装置。
- 前記少なくとも1つの補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記少なくとも1つの補正素子が基板に製作され、次に前記発光素子と一体的に実装されることを特徴とする請求項1に記載の発光装置。
- 前記少なくとも1つの補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記少なくとも1つの補正素子が基板の導電線路上に形成され、次に前記発光素子と一体的に実装されることを特徴とする請求項1に記載の発光装置。
- 前記少なくとも1つの補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、少なくとも1つの補正素子がエピタキシー法により前記発光素子の上に設置され、次に一体的に実装されることを特徴とする請求項1に記載の発光装置。
- 前記少なくとも1つの補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記少なくとも1つの補正素子がエピタキシー法により前記発光素子に載置され、次に基板に載置されて一体的に実装されることを特徴とする請求項1に記載の発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200510135136 | 2005-12-23 | ||
CN200510135136.4 | 2005-12-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007173830A true JP2007173830A (ja) | 2007-07-05 |
JP4995559B2 JP4995559B2 (ja) | 2012-08-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006344292A Active JP4995559B2 (ja) | 2005-12-23 | 2006-12-21 | 発光装置 |
Country Status (3)
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JP (1) | JP4995559B2 (ja) |
KR (2) | KR20070066999A (ja) |
DE (1) | DE102006061168A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101522999B1 (ko) * | 2008-03-27 | 2015-05-27 | 서울반도체 주식회사 | 릴레이형 발광장치 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWM374153U (en) | 2009-03-19 | 2010-02-11 | Intematix Technology Ct Corp | Light emitting device applied to AC drive |
KR101689396B1 (ko) * | 2010-07-07 | 2016-12-23 | 서울반도체 주식회사 | 발광 소자 |
DE102011114253A1 (de) * | 2011-09-26 | 2013-03-28 | e:lumix OptoSemi Industries Verwaltungs GmbH | Leuchtvorrichtung |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62299092A (ja) * | 1986-06-18 | 1987-12-26 | Fujitsu Ltd | 発光ダイオ−ド |
JPH09148625A (ja) * | 1995-11-21 | 1997-06-06 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
JPH10321915A (ja) * | 1997-05-15 | 1998-12-04 | Rohm Co Ltd | 半導体発光素子 |
JP2002009343A (ja) * | 2000-06-26 | 2002-01-11 | Sanken Electric Co Ltd | 半導体発光装置及び保護装置 |
JP2002064224A (ja) * | 2000-08-18 | 2002-02-28 | Agilent Technologies Japan Ltd | 発光ダイオード及びその製造方法 |
JP2002335012A (ja) * | 1999-02-25 | 2002-11-22 | Nichia Chem Ind Ltd | 発光ダイオード及びそれを用いたドットマトリックスディスプレイ |
JP2003008075A (ja) * | 2001-06-27 | 2003-01-10 | Toyoda Gosei Co Ltd | Ledランプ |
JP2003258315A (ja) * | 2002-03-04 | 2003-09-12 | Kokuren Koden Kagi Kofun Yugenkoshi | 静電気防止ダイオードを具える発光ダイオード実装構造 |
-
2006
- 2006-12-21 JP JP2006344292A patent/JP4995559B2/ja active Active
- 2006-12-22 DE DE102006061168A patent/DE102006061168A1/de not_active Ceased
- 2006-12-26 KR KR1020060133771A patent/KR20070066999A/ko active Search and Examination
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2009
- 2009-11-26 KR KR1020090115445A patent/KR20090127397A/ko not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62299092A (ja) * | 1986-06-18 | 1987-12-26 | Fujitsu Ltd | 発光ダイオ−ド |
JPH09148625A (ja) * | 1995-11-21 | 1997-06-06 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
JPH10321915A (ja) * | 1997-05-15 | 1998-12-04 | Rohm Co Ltd | 半導体発光素子 |
JP2002335012A (ja) * | 1999-02-25 | 2002-11-22 | Nichia Chem Ind Ltd | 発光ダイオード及びそれを用いたドットマトリックスディスプレイ |
JP2002009343A (ja) * | 2000-06-26 | 2002-01-11 | Sanken Electric Co Ltd | 半導体発光装置及び保護装置 |
JP2002064224A (ja) * | 2000-08-18 | 2002-02-28 | Agilent Technologies Japan Ltd | 発光ダイオード及びその製造方法 |
JP2003008075A (ja) * | 2001-06-27 | 2003-01-10 | Toyoda Gosei Co Ltd | Ledランプ |
JP2003258315A (ja) * | 2002-03-04 | 2003-09-12 | Kokuren Koden Kagi Kofun Yugenkoshi | 静電気防止ダイオードを具える発光ダイオード実装構造 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101522999B1 (ko) * | 2008-03-27 | 2015-05-27 | 서울반도체 주식회사 | 릴레이형 발광장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20070066999A (ko) | 2007-06-27 |
DE102006061168A1 (de) | 2007-07-26 |
JP4995559B2 (ja) | 2012-08-08 |
KR20090127397A (ko) | 2009-12-11 |
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