JP2007172592A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2007172592A JP2007172592A JP2006313406A JP2006313406A JP2007172592A JP 2007172592 A JP2007172592 A JP 2007172592A JP 2006313406 A JP2006313406 A JP 2006313406A JP 2006313406 A JP2006313406 A JP 2006313406A JP 2007172592 A JP2007172592 A JP 2007172592A
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- Prior art keywords
- antenna
- memory
- pad
- wireless chip
- circuit unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 title claims description 48
- 230000015654 memory Effects 0.000 claims abstract description 236
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000004891 communication Methods 0.000 claims description 31
- 150000002894 organic compounds Chemical class 0.000 claims description 20
- 239000010409 thin film Substances 0.000 abstract description 26
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 16
- 239000010703 silicon Substances 0.000 abstract description 16
- 239000011521 glass Substances 0.000 abstract description 10
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- 230000006835 compression Effects 0.000 abstract description 3
- 238000007906 compression Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 110
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 230000008859 change Effects 0.000 description 11
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- 229910052751 metal Inorganic materials 0.000 description 11
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 229910010272 inorganic material Inorganic materials 0.000 description 9
- 239000011147 inorganic material Substances 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
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- 238000005530 etching Methods 0.000 description 7
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- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
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- 229910052762 osmium Inorganic materials 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000005404 monopole Effects 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
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- 238000005498 polishing Methods 0.000 description 2
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- 238000007639 printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 238000002425 crystallisation Methods 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
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- 239000002270 dispersing agent Substances 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 229910052758 niobium Inorganic materials 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
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- 230000001902 propagating effect Effects 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006313406A JP2007172592A (ja) | 2005-11-25 | 2006-11-20 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005340981 | 2005-11-25 | ||
| JP2006313406A JP2007172592A (ja) | 2005-11-25 | 2006-11-20 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007172592A true JP2007172592A (ja) | 2007-07-05 |
| JP2007172592A5 JP2007172592A5 (enExample) | 2009-10-22 |
Family
ID=38299014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006313406A Withdrawn JP2007172592A (ja) | 2005-11-25 | 2006-11-20 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007172592A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012510115A (ja) * | 2008-11-25 | 2012-04-26 | コヴィオ インコーポレイテッド | 印刷アンテナ、アンテナを印刷する方法、および、印刷アンテナを備えるデバイス |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001024145A (ja) * | 1999-07-13 | 2001-01-26 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2001156265A (ja) * | 1999-11-22 | 2001-06-08 | Hyundai Electronics Ind Co Ltd | 不揮発性強誘電体メモリ素子並びにその製造方法 |
| JP2002169181A (ja) * | 2000-12-04 | 2002-06-14 | Toshiba Corp | 液晶表示装置 |
| JP2003085507A (ja) * | 2001-09-12 | 2003-03-20 | Nec Tokin Corp | 外部端子付icカードの製造方法 |
| JP2003283120A (ja) * | 2002-03-25 | 2003-10-03 | Toppan Forms Co Ltd | 導電接続部同士の接続方法 |
| JP2003297079A (ja) * | 2002-03-29 | 2003-10-17 | Seiko Epson Corp | 強誘電体記憶装置及びその調整方法 |
| JP2004118694A (ja) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | コンビicカードの実装方法 |
| JP2005018402A (ja) * | 2003-06-26 | 2005-01-20 | Dainippon Printing Co Ltd | 複合icカード用icモジュール |
| JP2005277406A (ja) * | 2004-02-25 | 2005-10-06 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| JP2005285109A (ja) * | 2004-03-04 | 2005-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置、icカード |
-
2006
- 2006-11-20 JP JP2006313406A patent/JP2007172592A/ja not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001024145A (ja) * | 1999-07-13 | 2001-01-26 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2001156265A (ja) * | 1999-11-22 | 2001-06-08 | Hyundai Electronics Ind Co Ltd | 不揮発性強誘電体メモリ素子並びにその製造方法 |
| JP2002169181A (ja) * | 2000-12-04 | 2002-06-14 | Toshiba Corp | 液晶表示装置 |
| JP2003085507A (ja) * | 2001-09-12 | 2003-03-20 | Nec Tokin Corp | 外部端子付icカードの製造方法 |
| JP2003283120A (ja) * | 2002-03-25 | 2003-10-03 | Toppan Forms Co Ltd | 導電接続部同士の接続方法 |
| JP2003297079A (ja) * | 2002-03-29 | 2003-10-17 | Seiko Epson Corp | 強誘電体記憶装置及びその調整方法 |
| JP2004118694A (ja) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | コンビicカードの実装方法 |
| JP2005018402A (ja) * | 2003-06-26 | 2005-01-20 | Dainippon Printing Co Ltd | 複合icカード用icモジュール |
| JP2005277406A (ja) * | 2004-02-25 | 2005-10-06 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| JP2005285109A (ja) * | 2004-03-04 | 2005-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置、icカード |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012510115A (ja) * | 2008-11-25 | 2012-04-26 | コヴィオ インコーポレイテッド | 印刷アンテナ、アンテナを印刷する方法、および、印刷アンテナを備えるデバイス |
| US9016585B2 (en) | 2008-11-25 | 2015-04-28 | Thin Film Electronics Asa | Printed antennas, methods of printing an antenna, and devices including the printed antenna |
| US9361573B2 (en) | 2008-11-25 | 2016-06-07 | Thin Film Electronics Asa | Printed antennas, methods of printing an antenna, and devices including the printed antenna |
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