JP2007165601A - Light emitting diode device, and manufacturing method thereof - Google Patents

Light emitting diode device, and manufacturing method thereof Download PDF

Info

Publication number
JP2007165601A
JP2007165601A JP2005360135A JP2005360135A JP2007165601A JP 2007165601 A JP2007165601 A JP 2007165601A JP 2005360135 A JP2005360135 A JP 2005360135A JP 2005360135 A JP2005360135 A JP 2005360135A JP 2007165601 A JP2007165601 A JP 2007165601A
Authority
JP
Japan
Prior art keywords
temperature
metal substrate
emitting diode
layer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005360135A
Other languages
Japanese (ja)
Inventor
Iwatomo Moriyama
厳與 森山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Lighting and Technology Corp
Original Assignee
Toshiba Lighting and Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Lighting and Technology Corp filed Critical Toshiba Lighting and Technology Corp
Priority to JP2005360135A priority Critical patent/JP2007165601A/en
Publication of JP2007165601A publication Critical patent/JP2007165601A/en
Withdrawn legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting diode device and a manufacturing method thereof wherein the number of its manufacturing processes can be cut down in comparison with conventional ones, and its productivity can be improved. <P>SOLUTION: In the manufacturing method of the light emitting diode device, a resin layer 6a for forming an insulating layer and a conductor layer 7a for forming a wiring layer 7 are provided on a metal substrate 2. The metal substrate 2 is so mounted on a pressing mold 10 as to start the pressurization of the metal substrate 2, the resin layer 6a, and the conductor layer 7a by pressing them in the state of heating them at a first temperature, and as to increase the pressure of the pressurization while performing a temperature rise to a second temperature higher than the first temperature. Consequently, a recess 3 is formed in the metal substrate 2; and the metal substrate 2, the resin layer 6a, and the conductor layer 7a are bonded to each other. Hereupon, a resin having such a temperature dependency that its thermal expansion coefficient is so once reduced between the first and second temperatures as to be increased thereafter is used as the resin layer 6a. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発光ダイオード（ＬＥＤ（Light Emitting Diode））を有する発光ダイオード装置及び発光ダイオード装置の製造方法に関する。   The present invention relates to a light emitting diode device having a light emitting diode (LED) and a method for manufacturing the light emitting diode device.

従来から、絶縁性の基材に凹部を設け、この凹部内に発光ダイオードを配置した発光ダイオード装置が知られている。また、放熱性を高めるために上記の絶縁性基材に金属板を取り付けた構造の発光ダイオード装置も知られている。このような発光ダイオード装置を製造する場合、例えば、放熱用の金属板を金型の中に入れてインサート射出成形によって絶縁性基材を形成した後、レーザ又はホーニングにより凹部の底面から成形樹脂を取り除き、この後、プラズマ処理による絶縁性基材表面の粗面化、スパッタリングや真空蒸着による金属膜の形成、金属膜のパターニング、めっき等の工程により製造が行われる（例えば、特許文献１参照。）。
特開平１１−１６３４１２号公報 2. Description of the Related Art Conventionally, a light emitting diode device in which a concave portion is provided in an insulating base material and a light emitting diode is disposed in the concave portion is known. In addition, a light emitting diode device having a structure in which a metal plate is attached to the above insulating base material in order to improve heat dissipation is also known. When manufacturing such a light emitting diode device, for example, after placing a metal plate for heat dissipation in a mold and forming an insulating base material by insert injection molding, a molding resin is applied from the bottom surface of the recess by laser or honing. Then, the surface of the insulating base material is roughened by plasma treatment, the metal film is formed by sputtering or vacuum deposition, the metal film is patterned, and plating is performed (for example, see Patent Document 1). ).
Japanese Patent Laid-Open No. 11-163212

上記のように、従来の発光ダイオード装置の製造工程においては、例えば、放熱用の金属板を金型の中に入れてインサート射出成形によって絶縁性基材を形成した後、レーザ又はホーニングにより凹部の底面から成形樹脂を取り除き、この後、プラズマ処理による絶縁性基材表面の粗面化、スパッタリングや真空蒸着による金属膜の形成、金属膜のパターニング、めっき等の工程により発光ダイオード装置の製造が行われている。しかしながら、発光ダイオード装置の製造にあたっては、従来に比べて工程数の削減を図り、さらに生産性の向上を図ることが求められている。   As described above, in the manufacturing process of the conventional light emitting diode device, for example, a metal plate for heat dissipation is placed in a mold and an insulating base material is formed by insert injection molding. After removing the molding resin from the bottom surface, the light-emitting diode device is manufactured by processes such as roughening the surface of the insulating substrate by plasma treatment, forming a metal film by sputtering or vacuum deposition, patterning the metal film, and plating. It has been broken. However, in manufacturing a light emitting diode device, it is required to reduce the number of processes and further improve productivity compared to the conventional case.

本発明は、従来に比べて製造工程数を削減することができ、生産性の向上を図ることのできる発光ダイオード装置及び発光ダイオード装置の製造方法を提供しようとするものである。   The present invention is intended to provide a light-emitting diode device and a method for manufacturing the light-emitting diode device that can reduce the number of manufacturing steps as compared with the prior art and can improve productivity.

請求項１記載の発光ダイオード装置は、金属基板と、前記金属基板上に配設され、熱膨張係数が、第１の温度と当該第１の温度よりも高い第２の温度との間で一旦低下した後上昇する温度依存性を有する絶縁層と、前記絶縁層の上に配設された導体層とを有し、前記金属基板、前記絶縁層および前記導体層を、前記第１の温度に加熱した状態から第２の温度にまで加温しつつプレスにより加圧することにより、前記金属基板と前記絶縁層と前記導体層とを接着するとともに凹部を形成してなる金属基体と、前記凹部に設けられた発光ダイオードチップと、を具備したことを特徴とする。   The light-emitting diode device according to claim 1 is disposed on the metal substrate and the metal substrate, and has a thermal expansion coefficient once between the first temperature and the second temperature higher than the first temperature. An insulating layer having a temperature dependency that increases after being lowered, and a conductor layer disposed on the insulating layer, wherein the metal substrate, the insulating layer, and the conductor layer are brought to the first temperature. A metal base formed by adhering the metal substrate, the insulating layer, and the conductor layer and forming a recess, and pressurizing with a press while heating from a heated state to a second temperature, and the recess And a light-emitting diode chip provided.

請求項２記載の発光ダイオード装置は、請求項１記載の発光ダイオード装置において、前記絶縁層が、前記第１の温度と前記第２の温度との間で、前記金属基板の熱膨張係数と前記導体層の熱膨張係数の間の熱膨張係数を有することを特徴とする。   The light-emitting diode device according to claim 2 is the light-emitting diode device according to claim 1, wherein the insulating layer has a coefficient of thermal expansion of the metal substrate between the first temperature and the second temperature. It has a thermal expansion coefficient between the thermal expansion coefficients of the conductor layers.

請求項３記載の発光ダイオード装置は、請求項１又は２記載の発光ダイオード装置において、前記金属基板はアルミニュームからなり、前記導体層は銅からなることを特徴とする。   The light-emitting diode device according to claim 3 is the light-emitting diode device according to claim 1 or 2, wherein the metal substrate is made of aluminum, and the conductor layer is made of copper.

請求項４記載の発光ダイオード装置の製造方法は、金属基板上に、熱膨張係数が、第１の温度と当該第１の温度よりも高い第２の温度との間で一旦低下した後上昇する温度依存性を有する絶縁層と、当該絶縁層の上に導体層とを設ける工程と、前記金属基板と前記絶縁層と前記導体層とを、前記第１の温度に加熱した状態から第２の温度にまで加温しつつプレスにより加圧して前記金属基板と前記絶縁層と前記導体層とを接着するとともに凹部を形成する工程と、前記凹部に発光ダイオードを設ける工程と、を具備したことを特徴とする。     The method for manufacturing a light-emitting diode device according to claim 4 increases on the metal substrate after the coefficient of thermal expansion once decreases between the first temperature and the second temperature higher than the first temperature. A step of providing a temperature-dependent insulating layer, a conductor layer on the insulating layer, the metal substrate, the insulating layer, and the conductor layer heated from the first temperature to the second temperature; A step of bonding the metal substrate, the insulating layer, and the conductor layer by pressing while heating to a temperature and forming a recess, and a step of providing a light emitting diode in the recess. Features.

請求項１〜４記載の発明によれば、従来に比べて製造工程数を削減することができ、生産性の向上を図ることができる。   According to invention of Claims 1-4, compared with the past, the number of manufacturing processes can be reduced and productivity can be aimed at.

また、請求項２記載の発明によれば、絶縁層と、金属基板及び導体層との熱膨張差により、凹部内において絶縁層が切断されることを確実に防止して良質な発光ダイオード装置を得ることができる。   According to the invention described in claim 2, it is possible to reliably prevent the insulating layer from being cut in the recess due to the difference in thermal expansion between the insulating layer and the metal substrate and the conductor layer. Obtainable.

以下図面を参照しながら、本発明の実施形態について説明する。図１，２は、本発明の一実施形態に係る発光ダイオード装置１の構成を示すもので、図１上面図であり、図２は図１の要部断面構成を拡大して示すものである。図１に示すように、発光ダイオード装置１は、アルミニューム等の金属からなる金属基板２を具備している。この金属基板２は、略矩形状に形成されており、その中央部分には、図２にも示すように、凹部３が形成されている。   Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 show a configuration of a light emitting diode device 1 according to an embodiment of the present invention, which is a top view of FIG. 1, and FIG. 2 shows an enlarged cross-sectional configuration of a main part of FIG. . As shown in FIG. 1, the light emitting diode device 1 includes a metal substrate 2 made of a metal such as aluminum. The metal substrate 2 is formed in a substantially rectangular shape, and a concave portion 3 is formed in the central portion thereof as shown in FIG.

凹部３は、深さが例えば０．５ｍｍ程度とされており、この凹部３内には、発光ダイオード４が実装されている。図２に示すように、凹部３内には、封止材料として、例えば蛍光体を含む可視光変換無機材料５が充填されている。また、金属基板２の表面には、凹部３内も含めて絶縁層６と、配線層７とが金属基板２側からこの順で配置されている。   The depth of the recess 3 is about 0.5 mm, for example, and the light emitting diode 4 is mounted in the recess 3. As shown in FIG. 2, the concave portion 3 is filled with, for example, a visible light converting inorganic material 5 containing a phosphor as a sealing material. In addition, an insulating layer 6 and a wiring layer 7 including the inside of the recess 3 are arranged in this order from the metal substrate 2 side on the surface of the metal substrate 2.

上記絶縁層６は、金属基板２と配線層７とを絶縁するためのものである。また、配線層７は、発光ダイオード４を駆動するための電気配線を形成するためのものであり、所定の配線パターンにパターニングされている。発光ダイオード４は、凹部３内においてこの配線層７と電気的に接続されている。なお、図２において、配線層７は、１層のように示してあるが、この配線層７は、例えば、銅層、ニッケル層、金層等の複数の導体層から形成されている。また、上記金属基板２の上部には、発光ダイオード４からの光を導出するための図示しないレンズが配置される。   The insulating layer 6 is for insulating the metal substrate 2 and the wiring layer 7. The wiring layer 7 is for forming an electric wiring for driving the light emitting diode 4 and is patterned into a predetermined wiring pattern. The light emitting diode 4 is electrically connected to the wiring layer 7 in the recess 3. In FIG. 2, the wiring layer 7 is shown as a single layer, but the wiring layer 7 is formed of a plurality of conductor layers such as a copper layer, a nickel layer, and a gold layer, for example. In addition, a lens (not shown) for guiding light from the light emitting diode 4 is disposed on the metal substrate 2.

図３は、上記構成の発光ダイオード装置１の製造工程において、金属基板２に凹部３を形成するとともに、金属基板２に、絶縁層６と配線層７の一部とを接着する工程を示すものである。この工程においては、同図（ａ）に示すように、金属基板２上に絶縁層６を形成するための樹脂層６ａを設け、この樹脂層６ａの上に配線層７を形成するための導体層７ａを設ける。これらの樹脂層６ａ及び導体層７ａとしては、例えばシート状のものを積層して配置することによって金属基板２上に設けることができる。   FIG. 3 shows a process of forming the recess 3 in the metal substrate 2 and bonding the insulating layer 6 and a part of the wiring layer 7 to the metal substrate 2 in the manufacturing process of the light emitting diode device 1 having the above configuration. It is. In this step, as shown in FIG. 4A, a resin layer 6a for forming an insulating layer 6 is provided on a metal substrate 2, and a conductor for forming a wiring layer 7 on the resin layer 6a. Layer 7a is provided. These resin layer 6a and conductor layer 7a can be provided on the metal substrate 2 by laminating and arranging, for example, sheet-like ones.

次に、図３（ｂ）に示すように、プレス金型１０上に金属基板２を載せ、この金属基板２、樹脂層６ａ、導体層７ａを、第１の温度（例えば７０℃）に加熱した状態で、プレスによる加圧を開始し、第１の温度より高い第２の温度（例えば１８０℃）まで昇温しながら加圧する圧力を高める。縦軸を温度及び圧力、横軸を時間とした図４にこの工程における圧力の変化を点線Ａで、温度の変化を実線Ｂで示す。この第１の温度から第２の温度までの昇温は、例えば、３分程度の時間をかけて行う。そして、第２の温度に到達した後、徐々に冷却して第１の温度まで降温する。この第２の温度から第１の温度までの降温は、例えば、５〜１０分程度の時間をかけて行う。以上の工程により、金属基板２に凹部３を形成するとともに、金属基板２と樹脂層６ａと導体層７ａとの接着を行う。   Next, as shown in FIG. 3B, the metal substrate 2 is placed on the press die 10, and the metal substrate 2, the resin layer 6a, and the conductor layer 7a are heated to a first temperature (for example, 70 ° C.). In this state, pressurization by a press is started, and the pressure to be pressurized is increased while raising the temperature to a second temperature (for example, 180 ° C.) higher than the first temperature. In FIG. 4, the vertical axis represents temperature and pressure, and the horizontal axis represents time. The change in pressure in this step is indicated by a dotted line A, and the change in temperature is indicated by a solid line B. The temperature increase from the first temperature to the second temperature is performed over a period of about 3 minutes, for example. And after reaching 2nd temperature, it cools gradually and falls to 1st temperature. The temperature decrease from the second temperature to the first temperature is performed over a period of about 5 to 10 minutes, for example. Through the above steps, the recess 3 is formed in the metal substrate 2, and the metal substrate 2, the resin layer 6a, and the conductor layer 7a are bonded.

上記の工程において、導体層７ａとしては、銅を好適に用いることができる。また、樹脂層６ａとしては、縦軸を熱膨張係数、横軸を温度とした図５に曲線Ａで示すように、熱膨張係数が、第１の温度と第２の温度との間で一旦下がり、その後上昇する温度依存性を有する樹脂を用いる。また、この際の熱膨張係数の範囲が、金属基板２の熱膨張係数（本実施形態ではアルミニュームの熱膨張係数）と導体層７ａの熱膨張係数（本実施形態では銅の熱膨張係数）との間に収まる樹脂を用いることが好ましい。このような樹脂としては、例えば、熱可塑性樹脂、熱硬化樹脂と熱可塑性樹脂との混合物、等を好適に使用することができる。   In said process, copper can be used suitably as the conductor layer 7a. The resin layer 6a has a thermal expansion coefficient once between the first temperature and the second temperature as shown by a curve A in FIG. 5 where the vertical axis represents the thermal expansion coefficient and the horizontal axis represents the temperature. A resin having temperature dependency that decreases and then increases is used. In this case, the range of the thermal expansion coefficient is that of the metal substrate 2 (in this embodiment, the thermal expansion coefficient of aluminum) and the thermal expansion coefficient of the conductor layer 7a (in this embodiment, the thermal expansion coefficient of copper). It is preferable to use a resin that fits between the two. As such a resin, for example, a thermoplastic resin, a mixture of a thermosetting resin and a thermoplastic resin, and the like can be suitably used.

上記のような熱膨張係数の温度依存性を有する樹脂を使用するのは、以下のような理由による。すなわち、上記の工程では、金属基板２にプレスによって凹部３を形成するとともに、金属基板２と樹脂層６ａと導体層７ａとの接着を行う。このため、凹部３の部分では、樹脂層６ａが引っ張られ、例えば、図５に曲線Ｂで示すように、温度上昇に伴い熱膨張係数が上昇する特性を有する一般的な樹脂を用いると、凹部３の部分で樹脂層６ａが切れる現象が生じる。これは、樹脂の熱膨張係数と、金属基板２を構成するアルミニューム及び導体層７ａを構成する銅の熱膨張係数との差から、加温時あるいは冷却時に樹脂が引っ張られて切断されるためと考えられる。   The reason why the resin having the temperature dependence of the thermal expansion coefficient as described above is used is as follows. That is, in the above process, the recess 3 is formed on the metal substrate 2 by pressing, and the metal substrate 2, the resin layer 6a, and the conductor layer 7a are bonded. For this reason, the resin layer 6a is pulled in the concave portion 3 and, for example, as shown by a curve B in FIG. 5, when a general resin having a characteristic that the thermal expansion coefficient increases as the temperature rises is used, the concave portion The phenomenon that the resin layer 6a is cut at the portion 3 occurs. This is because the resin is pulled and cut during heating or cooling from the difference between the thermal expansion coefficient of the resin and the thermal expansion coefficient of the aluminum constituting the metal substrate 2 and the copper constituting the conductor layer 7a. it is conceivable that.

また、発光ダイオード装置の製造後の動作時における状態を考慮すると、少なくとも発光ダイオード装置の動作時の温度である７０℃程度の温度においては、樹脂層６ａを構成する樹脂の熱膨張係数は、金属基板２を構成するアルミニューム及び導体層７ａを構成する銅の熱膨張係数の中間とすることが好ましい。さらに、この樹脂のガラス転移点は、動作時の温度である７０℃よりもある程度高い必要がある。   In consideration of the state during operation after the manufacture of the light emitting diode device, the thermal expansion coefficient of the resin constituting the resin layer 6a is at least at a temperature of about 70 ° C. which is the temperature during operation of the light emitting diode device. It is preferable that the thermal expansion coefficient of the aluminum constituting the substrate 2 and the copper constituting the conductor layer 7a be in the middle. Furthermore, the glass transition point of this resin needs to be somewhat higher than 70 ° C., which is the operating temperature.

以上のような理由から、図５に曲線Ａで示すように、熱膨張係数が、第１の温度と第２の温度との間で一旦下がり、その後上昇する温度依存性を有し、これらの温度の間の熱膨張係数の範囲が、金属基板２の熱膨張係数（本実施形態ではアルミニュームの熱膨張係数）と導体層７ａの熱膨張係数（本実施形態では銅の熱膨張係数）との間に収まる樹脂を用いることにより、凹部３内においても、樹脂層６ａがプレス加工中に切れることがなく、切れのない絶縁層６を形成することが可能となる。   For the reasons as described above, as indicated by a curve A in FIG. 5, the thermal expansion coefficient has a temperature dependency that temporarily decreases between the first temperature and the second temperature and then increases. The range of the thermal expansion coefficient between the temperatures is the thermal expansion coefficient of the metal substrate 2 (in this embodiment, the thermal expansion coefficient of aluminum) and the thermal expansion coefficient of the conductor layer 7a (in this embodiment, the thermal expansion coefficient of copper). By using a resin that fits in between, the resin layer 6a is not cut during the pressing process even in the recess 3, and it is possible to form the insulating layer 6 without being cut.

以上のようにして、金属基板２に、凹部３を形成するとともに、金属基板２に、絶縁層６と配線層７の一部を構成する銅層７ａを接着した後、銅層７ａの上にニッケル層を形成し、所定の配線パターンにパターニングした後、金層を形成する等して配線層７を有し、かつ放熱板として作用する金属板２を得る。この後。凹部３内に発光ダイオード４を搭載し、凹部３内に封止材料として、例えば蛍光体を含む可視光変換無機材料５を充填する。そして、金属板２上にレンズを配置して発光ダイオード装置が得られる。   As described above, the recess 3 is formed in the metal substrate 2, and the insulating layer 6 and the copper layer 7a constituting a part of the wiring layer 7 are bonded to the metal substrate 2, and then the copper layer 7a is formed on the copper layer 7a. After the nickel layer is formed and patterned into a predetermined wiring pattern, the metal plate 2 having the wiring layer 7 and acting as a heat sink is obtained by forming a gold layer or the like. After this. The light emitting diode 4 is mounted in the recess 3, and the recess 3 is filled with, for example, a visible light converting inorganic material 5 including a phosphor as a sealing material. And a lens is arrange | positioned on the metal plate 2, and a light emitting diode apparatus is obtained.

上記のように、本実施形態では、金属基板２に、凹部３を形成するとともに、金属基板２に、絶縁層６と配線層７の一部を構成する銅層７ａを接着する工程を一度に行うことができるので、従来に比べて製造工程数を削減することができ、生産性の向上を図ることができる。   As described above, in the present embodiment, the step of forming the recess 3 in the metal substrate 2 and bonding the insulating layer 6 and the copper layer 7a constituting a part of the wiring layer 7 to the metal substrate 2 at a time. Since it can be performed, the number of manufacturing steps can be reduced as compared with the conventional case, and productivity can be improved.

本発明の一実施形態に係る発光ダイオード装置の構造を示す上面図。The top view which shows the structure of the light emitting diode apparatus which concerns on one Embodiment of this invention. 図１の発光ダイオード装置の要部構成を拡大して示す縦断面図。The longitudinal cross-sectional view which expands and shows the principal part structure of the light emitting diode apparatus of FIG. 本発明の実施形態に係る製造工程を模式的に示す図。The figure which shows typically the manufacturing process which concerns on embodiment of this invention. 図３に示す製造工程における圧力と温度の時間変化を示すグラフ。The graph which shows the time change of the pressure and temperature in the manufacturing process shown in FIG. 実施形態に使用した樹脂と通常の樹脂の熱膨張係数の温度依存性を示すグラフ。The graph which shows the temperature dependence of the thermal expansion coefficient of resin used for embodiment, and normal resin.

符号の説明Explanation of symbols

１……発光ダイオード装置、２……金属基板、３……凹部、４……発光ダイオード、５……蛍光体を含む可視光変換無機材料、６……絶縁層、７……配線層。   DESCRIPTION OF SYMBOLS 1 ... Light emitting diode device, 2 ... Metal substrate, 3 ... Recessed part, 4 ... Light emitting diode, 5 ... Visible light conversion inorganic material containing fluorescent substance, 6 ... Insulating layer, 7 ... Wiring layer.

Claims (4)

金属基板と、前記金属基板上に配設され、熱膨張係数が、第１の温度と当該第１の温度よりも高い第２の温度との間で一旦低下した後上昇する温度依存性を有する絶縁層と、前記絶縁層の上に配設された導体層とを有し、前記金属基板、前記絶縁層および前記導体層を、前記第１の温度に加熱した状態から第２の温度にまで加温しつつプレスにより加圧することにより、前記金属基板と前記絶縁層と前記導体層とを接着するとともに凹部を形成してなる金属基体と；
前記凹部に設けられた発光ダイオードチップと：
を具備したことを特徴とする発光ダイオード装置。 A metal substrate and a temperature dependency that is disposed on the metal substrate and has a coefficient of thermal expansion that rises after once decreasing between a first temperature and a second temperature that is higher than the first temperature. An insulating layer and a conductor layer disposed on the insulating layer, wherein the metal substrate, the insulating layer, and the conductor layer are heated from the first temperature to the second temperature. A metal substrate formed by adhering the metal substrate, the insulating layer, and the conductor layer and forming a recess by applying pressure with a press while heating;
A light emitting diode chip provided in the recess;
A light-emitting diode device comprising: 前記絶縁層が、前記第１の温度と前記第２の温度との間で、前記金属基板の熱膨張係数と前記導体層の熱膨張係数の間の熱膨張係数を有することを特徴とする請求項１に記載の発光ダイオード装置。   The insulating layer has a thermal expansion coefficient between the first temperature and the second temperature, which is between the thermal expansion coefficient of the metal substrate and the thermal expansion coefficient of the conductor layer. Item 4. The light-emitting diode device according to Item 1. 前記金属基板はアルミニュームからなり、前記導体層は銅からなることを特徴とする請求項１又は２に記載の発光ダイオード装置。   3. The light emitting diode device according to claim 1, wherein the metal substrate is made of aluminum, and the conductor layer is made of copper. 金属基板上に、熱膨張係数が、第１の温度と当該第１の温度よりも高い第２の温度との間で一旦低下した後上昇する温度依存性を有する絶縁層と、当該絶縁層の上に導体層とを設ける工程と；
前記金属基板と前記絶縁層と前記導体層とを、前記第１の温度に加熱した状態から第２の温度にまで加温しつつプレスにより加圧して前記金属基板と前記絶縁層と前記導体層とを接着するとともに凹部を形成する工程と；
前記凹部に発光ダイオードチップを設ける工程と；
を具備したことを特徴とする発光ダイオード装置の製造方法。 An insulating layer having a temperature dependency on a metal substrate, the coefficient of thermal expansion of which rises after once decreasing between a first temperature and a second temperature higher than the first temperature; Providing a conductor layer thereon;
The metal substrate, the insulating layer, and the conductor layer are pressurized by a press while being heated from the state heated to the first temperature to the second temperature, and the metal substrate, the insulating layer, and the conductor layer. And a step of forming a recess,
Providing a light emitting diode chip in the recess;
A method for manufacturing a light-emitting diode device, comprising:
JP2005360135A 2005-12-14 2005-12-14 Light emitting diode device, and manufacturing method thereof Withdrawn JP2007165601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005360135A JP2007165601A (en) 2005-12-14 2005-12-14 Light emitting diode device, and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005360135A JP2007165601A (en) 2005-12-14 2005-12-14 Light emitting diode device, and manufacturing method thereof

Publications (1)

Publication Number Publication Date
JP2007165601A true JP2007165601A (en) 2007-06-28

Family

ID=38248164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005360135A Withdrawn JP2007165601A (en) 2005-12-14 2005-12-14 Light emitting diode device, and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2007165601A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081194A (en) * 2007-09-25 2009-04-16 Sanyo Electric Co Ltd Light emitting module and its manufacturing method
US20110121335A1 (en) * 2007-08-31 2011-05-26 Sanyo Electric Co., Inc. Light emitting module and manufacturing method thereof
KR101077991B1 (en) 2011-01-28 2011-10-31 삼성엘이디 주식회사 Manufacturing method of LED package
KR101107590B1 (en) 2011-04-05 2012-01-25 안복만 Light emitting device package and manufacturing method the same
KR101504160B1 (en) * 2013-11-27 2015-03-20 주식회사 루멘스 Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101575653B1 (en) * 2013-11-27 2015-12-08 주식회사 루멘스 Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101761858B1 (en) * 2010-12-28 2017-07-27 서울반도체 주식회사 Method for separating nitride semiconductor device from substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110121335A1 (en) * 2007-08-31 2011-05-26 Sanyo Electric Co., Inc. Light emitting module and manufacturing method thereof
JP2009081194A (en) * 2007-09-25 2009-04-16 Sanyo Electric Co Ltd Light emitting module and its manufacturing method
KR101761858B1 (en) * 2010-12-28 2017-07-27 서울반도체 주식회사 Method for separating nitride semiconductor device from substrate
KR101077991B1 (en) 2011-01-28 2011-10-31 삼성엘이디 주식회사 Manufacturing method of LED package
KR101107590B1 (en) 2011-04-05 2012-01-25 안복만 Light emitting device package and manufacturing method the same
KR101504160B1 (en) * 2013-11-27 2015-03-20 주식회사 루멘스 Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101575653B1 (en) * 2013-11-27 2015-12-08 주식회사 루멘스 Light emitting device package, backlight unit, lighting device and its manufacturing method

Similar Documents

Publication Publication Date Title
JP5323501B2 (en) Light emitting diode package and manufacturing method thereof
JP2007165601A (en) Light emitting diode device, and manufacturing method thereof
JP4416731B2 (en) Light emitting diode package and manufacturing method thereof
JP4757495B2 (en) Composite lead frame LED package and manufacturing method thereof
US9040353B2 (en) Method for manufacturing semiconductor light emitting device
JP6595044B2 (en) Laminate film, laminate structure, and manufacturing method thereof
US20090121252A1 (en) Method for manufacturing flip-chip light emitting diode package
US20100288536A1 (en) Ceramic circuit board and method of making the same
KR100787089B1 (en) Radiant heat circuit substrate and method for manufacturing thereof
US20160276545A1 (en) Electronic component and method for producing an electronic component
US20090023234A1 (en) Method for manufacturing light emitting diode package
US7867908B2 (en) Method of fabricating substrate
KR20080053048A (en) Radiant heat circuit substrate and method for manufacturing thereof
KR20120062725A (en) Conversion agent body, optoelectronic semiconductor chip, and method for producing an optoelectronic semiconductor chip
TWI453960B (en) Method of packaging light emitting diode
US8796071B2 (en) Thermal dissipation substrate
JP2006032804A (en) Light emitting device and its manufacturing method
JP2018060834A (en) Electrostatic chuck and substrate fixing device
US10680147B2 (en) Method of producing a lighting device
JP2012182207A (en) Lead frame for led element and method for manufacturing the same
TWI422078B (en) Heat radiating structure and method for manufacturing the same
KR101783355B1 (en) Method for manufacturing a metal printed circuit board
JP2004327760A (en) Process for manufacturing led lamp
KR20090124064A (en) Substrate with active device chip embedded therein and fabricating method thereof
JP2012182210A (en) Method for manufacturing lead frame substrate for led element

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20090303