JP2007158132A5 - - Google Patents
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- Publication number
- JP2007158132A5 JP2007158132A5 JP2005352727A JP2005352727A JP2007158132A5 JP 2007158132 A5 JP2007158132 A5 JP 2007158132A5 JP 2005352727 A JP2005352727 A JP 2005352727A JP 2005352727 A JP2005352727 A JP 2005352727A JP 2007158132 A5 JP2007158132 A5 JP 2007158132A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound semiconductor
- group iii
- iii nitride
- nitride compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- -1 nitride compound Chemical class 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 229910000679 solder Inorganic materials 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005352727A JP2007158132A (ja) | 2005-12-06 | 2005-12-06 | Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法 |
| US11/633,623 US20070141753A1 (en) | 2005-06-12 | 2006-12-05 | Group III nitride based compound semiconductor device and producing method for the same |
| DE102006035487A DE102006035487A1 (de) | 2005-12-06 | 2006-12-05 | Gruppe III/Nitrid-basierte Verbindungshalbleitervorrichtung und dessen Herstellungsverfahren |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005352727A JP2007158132A (ja) | 2005-12-06 | 2005-12-06 | Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007158132A JP2007158132A (ja) | 2007-06-21 |
| JP2007158132A5 true JP2007158132A5 (cg-RX-API-DMAC7.html) | 2008-05-15 |
Family
ID=38056178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005352727A Withdrawn JP2007158132A (ja) | 2005-06-12 | 2005-12-06 | Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20070141753A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2007158132A (cg-RX-API-DMAC7.html) |
| DE (1) | DE102006035487A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007040295A1 (en) * | 2005-10-04 | 2007-04-12 | Seoul Opto Device Co., Ltd. | (al, ga, in)n-based compound semiconductor and method of fabricating the same |
| KR101081193B1 (ko) | 2009-10-15 | 2011-11-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| DE102011011862A1 (de) * | 2011-02-21 | 2012-08-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl optoelektronischer Halbleiterchips |
| KR101466832B1 (ko) * | 2013-06-28 | 2014-11-28 | 코닝정밀소재 주식회사 | 유기발광소자 |
| JP7345524B2 (ja) * | 2021-07-30 | 2023-09-15 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10247747A (ja) * | 1997-03-05 | 1998-09-14 | Toshiba Corp | 半導体発光素子およびその製造方法 |
| US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| US6657300B2 (en) * | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
| JP2000091636A (ja) * | 1998-09-07 | 2000-03-31 | Rohm Co Ltd | 半導体発光素子の製法 |
| EP1387453B1 (en) * | 2001-04-12 | 2009-11-11 | Nichia Corporation | Gallium nitride compound semiconductor element |
| US6995032B2 (en) * | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
| KR100497890B1 (ko) * | 2002-08-19 | 2005-06-29 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
| CN100375301C (zh) * | 2002-11-06 | 2008-03-12 | 三垦电气株式会社 | 半导体发光元件及其制造方法 |
| US7141828B2 (en) * | 2003-03-19 | 2006-11-28 | Gelcore, Llc | Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact |
| DE10351028B4 (de) * | 2003-10-31 | 2005-09-08 | Infineon Technologies Ag | Halbleiter-Bauteil sowie dafür geeignetes Herstellungs-/Montageverfahren |
| US7008861B2 (en) * | 2003-12-11 | 2006-03-07 | Cree, Inc. | Semiconductor substrate assemblies and methods for preparing and dicing the same |
| US20050167837A1 (en) * | 2004-01-21 | 2005-08-04 | International Business Machines Corporation | Device with area array pads for test probing |
| KR100586955B1 (ko) * | 2004-03-31 | 2006-06-07 | 삼성전기주식회사 | 질화물 반도체 발광소자의 제조방법 |
| EP1749308A4 (en) * | 2004-04-28 | 2011-12-28 | Verticle Inc | SEMICONDUCTOR COMPONENTS WITH VERTICAL STRUCTURE |
| EP1810351B1 (en) * | 2004-10-22 | 2013-08-07 | Seoul Opto Device Co., Ltd. | Gan compound semiconductor light emitting element |
-
2005
- 2005-12-06 JP JP2005352727A patent/JP2007158132A/ja not_active Withdrawn
-
2006
- 2006-12-05 DE DE102006035487A patent/DE102006035487A1/de not_active Withdrawn
- 2006-12-05 US US11/633,623 patent/US20070141753A1/en not_active Abandoned