JP2007144398A - Cleaning sheet, transfer member provided with cleaning function, and method for cleaning substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transfer member with a cleaning function, which has excellent foreign material removing performance and transfer performance and removes foreign materials having a prescribed particle diameter with especially high efficiency. <P>SOLUTION: The transfer member with the cleaning function is provided with a transfer member and a cleaning layer arranged at least on one surface of the transfer member. The cleaning layer has an uneven shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm<SP>2</SP>is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat surface of 1 mm<SP>2</SP>. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a cleaning sheet and a conveying member with a cleaning function. More specifically, the present invention relates to a cleaning sheet and a transport member with a cleaning function that are excellent in foreign matter removal performance and transport performance, and that can remove foreign matters having a predetermined particle diameter particularly efficiently. The present invention also relates to a cleaning method for a substrate processing apparatus using such a cleaning sheet and a conveying member with a cleaning function.

  In various substrate processing apparatuses that dislike foreign matters, such as manufacturing apparatuses and inspection apparatuses such as semiconductors, flat panel displays, and printed circuit boards, the respective transport systems and the substrate are transported while being physically contacted. At that time, if foreign matter adheres to the substrate or the transport system, subsequent substrates are contaminated one after another, and it is necessary to periodically stop the apparatus and perform a cleaning process. As a result, there has been a problem that the operating rate of the processing apparatus is lowered and a great amount of labor is required for the cleaning process of the apparatus.

  In order to overcome such a problem, a method (see Patent Document 1) for removing foreign substances adhering to the back surface of the substrate by conveying a plate-like member has been proposed. According to such a method, since it is not necessary to stop the substrate processing apparatus and perform the cleaning process, the problem that the operating rate of the processing apparatus is reduced is solved. However, this method cannot sufficiently remove foreign matter.

  On the other hand, there has been proposed a method (see Patent Document 2) for cleaning and removing foreign substances adhering to the processing apparatus by transporting the substrate to which the adhesive substance is fixed as a cleaning member into the substrate processing apparatus. In addition to the advantages of the method described in Patent Document 1, this method is also excellent in removing foreign matters. Therefore, a problem that the operating rate of the processing apparatus is reduced and a great amount of labor is required for the cleaning process of the apparatus. Both of these problems are solved. However, according to the method described in Patent Document 2, the contact portion between the adhesive substance and the apparatus may be strongly bonded and not separated. As a result, there may be a problem that the substrate cannot be reliably transported or a problem that the transport device is damaged.

In recent years, along with the miniaturization of semiconductor devices, adhesion of foreign matters not only on the wafer surface but also on the back surface has become a problem. This is because foreign substances are transferred from the back surface of the wafer to the front surface of the wafer in the cleaning process, thereby reducing the product yield. At present, mass production of a semiconductor element having a wiring width of 65 nm has been started, and if a foreign substance having a size equal to or larger than the wiring width adheres, defects such as disconnection are likely to occur. In particular, foreign matter having a particle size of about 0.1 to 2.0 μm is a problem. However, any of the conventional techniques is insufficient to remove foreign substances having a predetermined particle diameter particularly efficiently.
JP-A-11-87458 (pages 2 to 3) JP-A-10-154686 (pages 2 to 4)

  The present invention has been made in order to solve the above-described conventional problems. The object of the present invention is excellent in foreign matter removal performance and transport performance, and can remove foreign matter having a predetermined particle diameter particularly efficiently. The object is to provide a cleaning sheet and a conveying member with a cleaning function (hereinafter, these may be collectively referred to as a cleaning member). Another object of the present invention is to provide a cleaning method for a substrate processing apparatus using such a cleaning member.

  As a result of intensive studies, the present inventors have found that the above object can be achieved by carrying out a predetermined roughening on the cleaning layer and forming specific irregularities on the surface of the cleaning layer, and have completed the present invention.

  The cleaning sheet of the present invention includes a cleaning layer having an uneven shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less.

  In preferable embodiment, the said uneven | corrugated shape is a groove structure.

In a preferred embodiment, the actual surface area per 1 mm ^{2 of the} cleaning layer is 150% or more of the actual surface area per 1 mm ² of the silicon wafer mirror surface.

  In a preferred embodiment, the cleaning layer has a tensile elastic modulus of 0.98 MPa to 4900 MPa.

  According to another aspect of the present invention, a conveyance member with a cleaning function is provided. The transport member with a cleaning function includes a transport member and the cleaning layer provided on at least one surface of the transport member.

  In a preferred embodiment, the cleaning layer is directly attached to the transport member. In another embodiment, the cleaning layer is affixed to the transport member via a pressure sensitive adhesive layer.

  According to still another aspect of the present invention, a cleaning method for a substrate processing apparatus is provided. This method includes transporting the cleaning sheet or the transporting member with a cleaning function into the substrate processing apparatus.

  As described above, according to the present invention, by using a cleaning layer having a predetermined surface roughness, not only the conveyance performance and the foreign matter removal performance are excellent, but also foreign matters having a predetermined particle diameter are removed particularly efficiently. A cleaning member that can be obtained is obtained.

A. Cleaning Sheet FIG. 1 is a schematic sectional view of a cleaning sheet according to a preferred embodiment of the present invention. The cleaning sheet 100 includes a support 10, a cleaning layer 20, and a release liner 30. The support 10 and / or the release liner 30 may be omitted depending on the purpose. That is, the cleaning sheet may be composed of the cleaning layer alone.

  The cleaning layer 20 has an uneven shape having an arithmetic average roughness Ra of 0.05 μm or less on the surface and a maximum height Rz of 1.0 μm or less. By having such arithmetic average roughness and maximum height, the cleaning layer 20 has a surface shape that is significantly larger than a smooth surface and has a surface shape with a small unevenness (depth). . When the cleaning layer has such a specific surface shape, foreign substances having a predetermined particle diameter (typically, 0.1 to 2.0 μm) can be removed very efficiently. The arithmetic average roughness Ra is preferably 0.04 μm or less, more preferably 0.03 μm or less. On the other hand, the lower limit of the arithmetic average roughness Ra is preferably 0.0002 μm, more preferably 0.0004 μm, still more preferably 0.002 μm, and particularly preferably 0.004 μm. The maximum height Rz is preferably 0.8 μm or less, more preferably 0.7 μm or less. On the other hand, the lower limit of the maximum height Rz is preferably 0.1 μm, more preferably 0.2 μm, and particularly preferably 0.3 μm. Both arithmetic average roughness and maximum height are defined in JIS B0601. The arithmetic average roughness and the maximum height are measured, for example, by the following procedure: In a stylus type surface roughness measuring device (manufactured by Tencor, product name P-11), the tip portion has a curvature of 2 μm. Using a stylus, data is acquired at a needle pressing force of 5 mg, a measurement speed of 1 μm / second (measurement length of 100 μm), and a sampling period of 200 Hz. The arithmetic average roughness is calculated as a cutoff value of 25 to 80 μm.

The actual surface area per 1 mm ² plane of the cleaning layer is preferably 150% or more, more preferably 160% or more, and most preferably 170% or more with respect to the actual surface area per 1 mm ² plane of the silicon wafer mirror surface. . On the other hand, the actual surface area per 1 mm ^{2 of the} cleaning layer is preferably 220% or less, more preferably 200% or less, relative to the actual surface area per 1 mm ² of the silicon wafer mirror surface. By having such a surface roughness, foreign substances having a predetermined particle diameter (typically 0.1 μm or more, preferably 0.1 to 2.0 μm) can be removed very efficiently.

  As long as it has the surface shape (surface roughness) as described above, any appropriate shape can be adopted as the uneven shape of the cleaning layer 20. Specific examples of the concavo-convex shape include a groove shape, a stripe shape, a protrusion shape, a dimple shape, and a rough surface shape such as a sandpaper surface. A groove shape is preferred. Although it is not theoretically clear, it is because the foreign matter removal performance is excellent.

  The tensile elastic modulus of the cleaning layer is preferably 0.5 MPa or more, more preferably 1 to 1000 MPa in the operating temperature range of the cleaning member. When the tensile modulus is in such a range, a cleaning member having an excellent balance between foreign matter removal performance and conveyance performance can be obtained. In one embodiment, the tensile modulus is 0.98-4900 MPa. In such a case, a remarkable effect can be obtained in cleaning the substrate processing apparatus for flat panel displays. The tensile elastic modulus is measured according to JIS K7127.

  The cleaning layer has, for example, a 180-degree peeling adhesive force with respect to the mirror surface of the silicon wafer, preferably 0.2 N / 10 mm width or less, and more preferably 0.01-0.10 N / 10 mm width. Within such a range, the cleaning layer has good foreign matter removal performance and transport performance. 180 degree peeling adhesive strength is measured according to JIS Z0237.

  The thickness of the cleaning layer is preferably 0.1 to 2 mm, more preferably 0.2 to 1 mm. With such a thickness, a self-supporting property can be obtained such that the cleaning layer alone can be transported and foreign matter can be removed. The thickness of the cleaning layer when the cleaning sheet has a support is preferably 1 to 100 μm, more preferably 5 to 100 μm, still more preferably 5 to 50 μm, and particularly preferably 10 to 50 μm. If it is such a range, the cleaning member excellent in the balance of the removal performance of a foreign material and conveyance performance is obtained.

  Next, materials constituting the cleaning layer 20 will be described. As a material constituting the cleaning layer, any appropriate material can be adopted depending on the purpose and the method of forming the unevenness. Specific examples of the material constituting the cleaning layer include a heat resistant resin and an energy ray curable resin.

  The heat resistant resin is preferably a resin that does not contain a substance that contaminates the substrate processing apparatus. An example of such a resin is a heat resistant resin used in a semiconductor manufacturing apparatus. Specific examples include polyimide and fluororesin. Polyimide is preferred. This is because the operability in the case of forming irregularities by the nozzle method (described later) is excellent.

  Preferably, the polyimide can be obtained by imidizing a polyamic acid having a butadiene-acrylonitrile copolymer skeleton in the main chain. The polyamic acid can be obtained by reacting a tetracarboxylic dianhydride component and a diamine component in a substantially equimolar ratio in any appropriate organic solvent.

  Examples of the tetracarboxylic dianhydride component include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3 , 3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride, 2,2- Bis (2,3-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) ) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxy) Eniru) sulfone dianhydride, pyromellitic dianhydride, ethylene glycol bis trimellitic acid dianhydride. These may be used alone or in combination of two or more.

Examples of the diamine component include diamines having a butadiene-acrylonitrile copolymer skeleton. Specific examples include aliphatic diamines represented by the following chemical formula. Such aliphatic diamines may be used alone or in combination with other diamines. Examples of the diamine used in combination include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, and p-phenylene. Diamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'- Diaminodiphenyl sulfide, 4,4′-diaminodiphenylsulfone, 3,3′-diaminodiphenylsulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1, 3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) -2 2-dimethylpropane, hexamethylenediamine, 1,8-diaminooctane, 1,12-diaminododecane, 4,4′-diaminobenzophenone, 1,3-bis (3-aminopropyl) -1,1,3,3 -Tetramethyldisiloxane.

  Another specific example of the diamine component includes a diamine compound having two ends having an amine structure and a polyether structure (hereinafter referred to as a PE diamine compound). The PE diamine compound is preferable in that it obtains a low elastic modulus polyimide resin having high heat resistance and low stress. Any suitable compound can be adopted as the PE diamine compound as long as it has a polyether structure and has at least two terminals having an amine structure. Examples thereof include a terminal diamine having a polypropylene glycol structure, a terminal diamine having a polyethylene glycol structure, a terminal diamine having a polytetramethylene glycol structure, and terminal diamines having a plurality of these structures. Among these, a PE diamine compound prepared from ethylene oxide, propylene oxide, polytetramethylene glycol, or a mixture thereof and a polyamine is preferable.

  In the reaction with the tetracarboxylic dianhydride, it is preferable to use, in combination with the PE diamine compound, another diamine compound having no polyether structure as a diamine component. Examples of other diamine compounds not having the polyether structure include aliphatic diamines and aromatic diamines. Examples of the aliphatic diamine include ethylenediamine, hexamethylenediamine, 1,8-diaminooctane, 1,10-diaminodecane, 1,12-diaminododecane, 4,9-dioxa-1,12-diaminododecane, 1, Examples include 3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane (α, ω-bisaminopropyltetramethyldisiloxane), polyoxypropylenediamine, and the like. The molecular weight of the aliphatic diamine is typically 50 to 1,000,000, preferably 100 to 30,000. Examples of the aromatic diamine include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, and p-phenylenediamine. 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, 3,3'- Diaminodiphenylsulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4 -Aminophenoxy) -2,2-dimethylpropane, 4,4'-diaminobenzophenone, etc. It is.

  Examples of the organic solvent used in the reaction of the tetracarboxylic dianhydride and diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, and N, N-dimethylformamide. In order to adjust the solubility of raw materials and the like, a nonpolar solvent (for example, toluene or xylene) may be used in combination.

  The reaction temperature of the tetracarboxylic dianhydride and the diamine is preferably less than 100 ° C, more preferably 50 to 90 ° C. However, when a diamine containing a butadiene-acrylonitrile copolymer skeleton is used, it is preferably 100 ° C. or higher, more preferably 110 to 150 ° C. At such a reaction temperature, gelation can be prevented and no gel content remains in the reaction system, so that clogging during filtration is prevented, and removal of foreign substances from the reaction system is facilitated. . Furthermore, if it is such reaction temperature, the volatile component in resin can be removed substantially completely. Moreover, oxidation and deterioration of the resin can be prevented by processing in an inert atmosphere.

  The imidization of the polyamic acid is typically performed by heat treatment under an inert atmosphere (typically vacuum or nitrogen atmosphere). The heat treatment temperature is preferably 150 ° C. or higher, more preferably 180 to 450 ° C. If it is such temperature, the volatile component in resin can be removed substantially completely. Moreover, oxidation and deterioration of the resin can be prevented by processing in an inert atmosphere.

  The energy ray curable resin is typically a composition containing an adhesive substance, an energy ray curable substance, and an energy ray curing initiator.

Any appropriate adhesive substance is adopted as the adhesive substance depending on the purpose. The weight average molecular weight of the adhesive substance is preferably 500 to 1,000,000, more preferably 600 to 900,000. The pressure-sensitive adhesive material may be a mixture of appropriate additives such as a crosslinking agent, a tackifier, a plasticizer, a sizing agent, and an anti-aging agent.
In one embodiment, a pressure sensitive adhesive polymer is used as the adhesive material. The pressure-sensitive adhesive polymer is suitably used when a nozzle method (described later) is used for forming irregularities on the cleaning layer. A typical example of the pressure-sensitive adhesive polymer is an acrylic polymer having an acrylic monomer such as (meth) acrylic acid and / or (meth) acrylic acid ester as a main monomer. Acrylic polymers can be used alone or in combination. If necessary, an unsaturated double bond may be introduced into the molecule of the acrylic polymer to impart energy ray curability to the acrylic polymer itself. Examples of the method for introducing an unsaturated double bond include a method of copolymerizing an acrylic monomer and a compound having two or more unsaturated double bonds in the molecule, an acrylic polymer and an unsaturated double bond in the molecule. The method of making the functional groups of the compound which has two or more bonds react is mentioned.

  In another embodiment, the adhesive material is rubber, acrylic, vinyl alkyl ether, silicone, polyester, polyamide, urethane, styrene / diene block copolymer, melting point of about 200 ° C. or less, etc. The pressure-sensitive adhesive having improved creep characteristics by blending the above hot-melt resin (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56- No. 13040) is used. These may be used alone or in combination. These pressure-sensitive adhesives are suitably used for cleaning members of flat panel display substrate processing apparatuses.

  More specifically, the pressure-sensitive adhesive is preferably a rubber-based pressure-sensitive adhesive based on natural rubber or various synthetic rubbers; or methyl group, ethyl group, propyl group, butyl group, amyl group or hexyl group. Alkyl having 20 or less carbon atoms such as heptyl group, 2-ethylhexyl group, isooctyl group, isodecyl group, dodecyl group, lauryl group, tridecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, and eicosyl group. An acrylic pressure-sensitive adhesive comprising a base copolymer of an acrylic copolymer using one or more acrylic acid alkyl esters composed of an ester such as acrylic acid or methacrylic acid having a group.

  As the acrylic copolymer, any appropriate acrylic copolymer is used depending on the purpose. The acrylic copolymer may have cohesive force, heat resistance, crosslinkability, and the like as necessary. For example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itotanic acid, maleic acid, fumaric acid, and crotonic acid; acid anhydride monomers such as maleic anhydride and itonic anhydride; ) Hydroxyethyl acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxyhexyl (meth) acrylate, hydroxyoctyl (meth) acrylate, (meth) acrylic Hydroxyl group-containing monomers such as hydroxydecyl acid, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) -methyl methacrylate; styrene sulfonic acid, allyl sulfonic acid, 2- Sulfonic acid group-containing monomers such as (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalene sulfonic acid; (meth) acrylamide, N, N -(N-substituted) amide monomers such as dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) acrylamide; aminoethyl (meth) acrylate, (Meth) acrylic acid aminoethyl, (meth) acrylic acid N, N-dimethylaminoethyl, (meth) acrylic acid alkylylamino monomer such as t-butylaminoethyl (meth) acrylate; (meth) methacrylic acid methoxyethyl, (Meta (Meth) acrylic acid alkoxyalkyl monomers such as ethoxyethyl acrylate; maleimide monomers such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide; N-methylitaconimide, N-ethyl Itaconimide monomers such as itacimide, N-butyl itaconimide, N-octyl itaconimide, N-2-ethylhexylitaconimide, N-cyclohexyl leuconconimide, N-lauryl itaconimide; N- (meth) acryloyloxymethylene succinimide, Succinimide monomers such as N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylene succinimide; acetic acid Vinyl, vinyl propionate, N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, bunyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imidazole, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, styrene , Α-methylstyrene, vinyl monomers such as N-vinylcaprolactam; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; epoxy group-containing acrylic monomers such as glycidyl (meth) acrylate; polyethylene glycol (meth) acrylate; Such as (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol Glycol acrylic ester monomers; (meth) acrylic acid tetrahydrofurfuryl, fluorine (meth) acrylate, silicone (meth) acrylate, acrylic acid ester monomers such as 2-methoxyethyl acrylate; hexanediol di (meth) acrylate, (poly ) Ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri ( Multifunctional mono, such as (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate 2 or more kinds of copolymer such as mer; appropriate monomers such as isoprene, butadiene, isobutylene, vinyl ether; The blending ratio of these monomers is appropriately set according to the purpose.

  The energy ray-curable material is an arbitrary material that can function as a crosslinking point (branch point) when reacting with the adhesive material by energy rays (preferably light, more preferably ultraviolet rays) to form a three-dimensional network structure. Any suitable material may be employed. A typical example of the energy ray-curable substance is a compound having one or more unsaturated double bonds in the molecule (hereinafter referred to as a polymerizable unsaturated compound). Preferably, the polymerizable unsaturated compound is non-volatile and has a weight average molecular weight of 10,000 or less, more preferably 5,000 or less. If it is such molecular weight, the said adhesive substance can form a three-dimensional network structure efficiently. Specific examples of energy ray curable materials include phenoxy polyethylene glycol (meth) acrylate, ε-caprolactone (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meta) ) Acrylates, trimethylolpropane tri (meth) acrylate, dipentaerythritol ruhexa (meth) acrylate, urethane (meth) acrylate, epoxy (meth) acrylate, oligoester (meth) acrylate Examples thereof include tetramethylolmethane tetra (meth) acrylate, pentaerythritol monohydroxypentaacrylate, 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, and polyethylene glycol diacrylate. These may be used alone or in combination. The energy ray curable substance is preferably used at a ratio of 0.1 to 50 parts by weight with respect to 100 parts by weight of the adhesive substance.

  Moreover, you may use energy-beam curable resin as an energy-beam curable substance. Specific examples of the energy ray curable resin include ester (meth) acrylate, urethane (meth) acrylate, epoxy (meth) acrylate, melamine (meth) acrylate, acrylic resin (meth) having a (meth) acryloyl group at the molecular terminal. Photosensitive reactive group-containing polymers such as acrylates, thiol-ene addition type resins having an allyl group at the molecular end, photocationic polymerization type resins, cinnamoyl group-containing polymers such as polyvinyl cinnamate, diazotized amino novolak resins and acrylamide type polymers Or an oligomer etc. are mentioned. Furthermore, examples of the polymer that reacts with energy rays include epoxidized polybutadiene, unsaturated polyester, polyglycidyl methacrylate, polyacrylamide, and polyvinylsiloxane. These may be used alone or in combination. The weight average molecular weight of energy beam curable resin becomes like this. Preferably it is 50-1 million, More preferably, it is 600-900,000.

  Any appropriate curing initiator (polymerization initiator) may be employed as the energy ray curing initiator depending on the purpose. For example, when heat is used as the energy beam, a thermal polymerization initiator is used, and when light is used as the energy beam, a photopolymerization initiator is used. Specific examples of the thermal polymerization initiator include benzoyl peroxide and azobisisobutyronitrile. Specific examples of the photopolymerization initiator include benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether and 2,2-dimethoxy-1,2-diphenylethane-1-one; substituted benzoins such as anisole methyl ether Ether; Substituted acetophenone such as 2,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxy-cyclohexyl ruphenyl ketone; Ketal such as benzylmethyl ketal and acetophenone diethyl ketal; Chlorothioxanthone, dodecylthioxanthone , Xanthones such as cymethylthioxanthone; benzophenones such as benzophenone and Michler's ketone; substituted amides such as 2-methyl-2-hydroxypropiophenone Ferketol; aromatic sulfonyl chlorides such as 2-naphthalenesulfonyl chloride; photoactive oximes such as 1-phenyl-1,1-propanedione-2- (o-ethoxycarbonyl) -oxime; benzoyl; cibenzyl; α-hydroxycyclohexyl Phenylketone; 2-hydroxymethylphenylpropane. The energy ray curing initiator is preferably used at a ratio of 0.1 to 10 parts by weight with respect to 100 parts by weight of the energy ray curable substance.

  The material constituting the cleaning layer may further contain any appropriate additive depending on the purpose. Specific examples of the additive include a surfactant, a plasticizer, an antioxidant, a conductivity imparting material, an ultraviolet absorber, and a light stabilizer. By adjusting the kind and / or amount of the additive used, a cleaning layer having desired characteristics according to the purpose can be obtained. For example, the addition amount of the additive is preferably 0.01 to 100 parts by weight, more preferably 0.1 to 10 parts by weight with respect to 100 parts by weight of the adhesive substance.

Any appropriate energy beam can be adopted as the energy beam depending on the purpose. Specific examples include ultraviolet rays, electron beams, radiation, heat and the like. Preferably, it is ultraviolet rays. The wavelength of the ultraviolet light is appropriately selected according to the purpose, and the center wavelength is preferably 320 to 400 nm. Examples of the ultraviolet ray generation source include a high-pressure mercury lamp, a medium-pressure mercury lamp, a Xe-Hg lamp, and a deep UV lamp. The UV integrated light quantity is appropriately set according to the purpose. Specifically, the UV integrated light quantity is preferably 100 to 8000 mJ / cm ² , more preferably 500 to 5000 mJ / cm ² .

  The energy beam may be applied to the entire cleaning layer forming material (energy beam curable resin) or may be selectively applied to a predetermined position. The area ratio between the irradiated portion and the non-irradiated portion can be appropriately set according to the purpose. For example, when emphasis is placed on the transportability within the apparatus, the transportability within the apparatus may be improved by relatively increasing the area ratio of the irradiated portion. On the other hand, when the foreign matter collecting property is more important than the in-apparatus transportability, the foreign matter collecting property may be improved by relatively increasing the area ratio of the non-irradiated portion. By adjusting the area ratio, it is possible to obtain a cleaning layer in which the foreign matter collecting performance and the transport performance have a desired balance. As a method of selectively irradiating energy rays, any appropriate method is adopted depending on the purpose. For example, a method of producing a mask having a predetermined pattern using an energy ray-shielding material and irradiating the energy ray through the mask; And a method of applying energy rays through a separator on the cleaning layer side. Moreover, the pattern which shields an energy ray can be suitably set according to the objective. Specific examples include a lattice shape, a polka dot shape, a checkered shape, and a mosaic shape.

  Examples of the method for forming the concavo-convex shape of the cleaning layer include, for example, a method in which the cleaning layer forming material is ejected from a nozzle (hereinafter simply referred to as a nozzle method), and a method in which a release liner is used (hereinafter referred to as a nozzle liner) A transfer method).

  FIG. 2 is a conceptual diagram illustrating the nozzle method. As shown in FIG. 2, in the nozzle method, the cleaning layer forming composition is discharged from the nozzle while causing the rotating support 10 (or a conveyance member described later) to scan the nozzle in the radial direction of the support. Including that. By appropriately adjusting the distance between the nozzle and the support, the scanning speed of the nozzle, and / or the discharge amount, a desired uneven shape can be formed. The distance between the nozzle and the support is ± 5% of the desired coating thickness (for example, 57 to 63 μm when the set coating thickness is 60 μm). If the interval is too wide, the maximum height Rz becomes too large, and the ability to effectively remove foreign substances having a predetermined particle size may be insufficient. If the interval is too narrow, the arithmetic average roughness Ra and the maximum height Rz become too large. In this case, too, the ability to effectively remove foreign substances having a predetermined particle diameter is often insufficient. The scanning speed can be appropriately set according to the rotation speed of the support. For example, when the rotation speed of the support is 60 rpm, the scan speed is preferably 0.8 to 1.2 mm / sec. The discharge amount is preferably 1.7 to 2.5 ml / second. For example, when the cleaning layer is formed using polyimide, a polyimide solution is introduced into the nozzle. The concentration of the polyimide solution can be appropriately set according to the purpose and the desired thickness of the cleaning layer. Specifically, the concentration is 20 to 40% by weight (solid content concentration). Examples of the solvent used in the solution include dimethylacetamide, N-methyl-2-pyrrolidone, N, N-dimethylformamide, methyl isobutyl ketone, and cyclopentanone.

  The transfer method is a method of forming irregularities using a release liner. As shown in FIG. 1, the release liner 30 is provided on the surface of the cleaning layer 20 opposite to the support 10 (that is, the foreign matter collecting surface of the cleaning layer) until the cleaning member is put to practical use. Can be placed. The release liner is typically a release-treated plastic film. By disposing the release liner, it is possible to prevent foreign matters from adhering to the cleaning layer before the cleaning process, and as a result, it is possible to prevent the cleaning performance of the cleaning member from being lowered. By arranging a release liner having a predetermined uneven surface, unevenness can be formed in the cleaning layer 20. If necessary, a predetermined pressing may be performed after the release liner is arranged. The uneven shape on the surface of the release liner may be a shape that allows the desired unevenness as described above to be formed on the cleaning layer. Typically, the release liner surface has an arithmetic average roughness Ra and a maximum height Rz equivalent to the desired arithmetic average roughness Ra and maximum height Rz of the cleaning layer. The unevenness on the surface of the release liner is formed when the release surface of the release liner is formed (that is, during the release treatment of the plastic film). Specific examples of the stripping treatment include surface treatment with a stripping agent such as a long-chain alkyl group, a fluorine group, or a fatty acid amide group. Specific examples of materials constituting the plastic film include polyolefins such as polyethylene, polypropylene, polybutene, polybutadiene, and polymethylpentene; polyesters such as polyethylene terephthalate and polybutylene terephthalate; polyurethanes; ethylene / vinyl acetate copolymer, ethylene -Olefin copolymers such as (meth) acrylic acid copolymer and ethylene / (meth) acrylic acid ester copolymer; ionomer resin; polystyrene; polycarbonate; heat-resistant resin such as polyimide. The thickness of the release liner is typically 5 to 100 μm. The nozzle method and the transfer method may be used in combination. In that case, typically, after forming the cleaning layer by the nozzle method, the uneven shape can be further adjusted using a release liner.

  The support 10 supports the cleaning sheet 100 so that it can be conveyed. The thickness of the support 10 can be appropriately selected, and is preferably 500 μm or less, more preferably 3 to 300 μm, and most preferably 5 to 250 μm. The surface of the support is chemically treated with conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, ionizing radiation treatment, etc., in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, the above-mentioned adhesive substance) may be performed. The support may be a single layer or a multilayer body.

  Arbitrary appropriate support bodies are employ | adopted for the support body 10 according to the objective. For example, engineering plastic and super engineering plastic films can be mentioned. Specific examples of engineering plastics and super engineering plastics include polyimide, polyethylene, polyethylene terephthalate, acetyl cellulose, polycarbonate, polypropylene, and polyamide. Various physical properties such as molecular weight can be appropriately selected according to the purpose. Further, the method for forming the support is appropriately selected according to the purpose.

  The cleaning sheet may have a protective film. The protective film is typically used for the purpose of protecting the cleaning layer when the cleaning layer is formed or when the cleaning layer and the conveying member are bonded (press-bonded). Further, since the protective film is used to assist the formation of the cleaning member, it is peeled off at an appropriate stage. Any appropriate film is adopted as the protective film depending on the purpose. For example, polyolefin such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene vinyl acetate copolymer, ionomer resin, ethylene ) Acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, polycarbonate, etc., plastic film, polyimide, and fluororesin film. The protective film may be subjected to a release treatment with a release agent or the like according to the purpose. Examples of the release agent include silicone, long chain alkyl, fluorine, fatty acid amide, and silica. The thickness of this protective film is preferably 1 to 100 μm. The formation method of a protective film is suitably selected according to the objective, For example, it can form by injection molding method, extrusion molding method, and blow molding method.

B. Transport Member with Cleaning Function The cleaning sheet of the present invention may be used alone as a cleaning sheet, or as a cleaning sheet provided on any appropriate transport member (that is, cleaning of the transport member with a cleaning function of the present invention). As a sheet). Hereinafter, a conveying member with a cleaning function according to a preferred embodiment of the present invention will be described.

  3A and 3B are schematic cross-sectional views of a conveying member with a cleaning function according to a preferred embodiment of the present invention. In one embodiment, as illustrated in FIG. 3A, the transport member with a cleaning function 200 includes a transport member 50 and a cleaning layer 20 on at least one surface (one surface in the illustrated example) of the transport member 50. That is, in this embodiment, the cleaning layer 20 is directly attached to the transport member 50. For example, when the cleaning layer is formed by the nozzle method, the cleaning layer is directly formed on the transport member. In another embodiment, as shown in FIG. 3B, the support 10 of the cleaning sheet 100 is bonded to the transport member 50 via the adhesive layer 40. In the illustrated example, a release liner 30 is disposed on the surface of the cleaning layer 20 opposite to the support 10. Preferably, the release liner 30 is used for forming irregularities on the cleaning layer 20 by the transfer method as described above. That is, a cleaning layer is formed on the surface of the support 10 by an appropriate method, and unevenness is formed using a release liner. When the cleaning layer is formed on the support 10 by the nozzle method, the release liner may be used only for preventing contamination of the surface. Although not shown, the cleaning layer may be bonded to the transport member via an adhesive layer. By transporting such a transporting member with a cleaning function in the apparatus and contacting / moving it to the site to be cleaned, it can be easily and reliably cleaned and removed without causing a transport trouble due to foreign matter adhering to the apparatus. .

  The adhesive layer has, for example, a 180-degree peeling adhesive force with respect to the mirror surface of the silicon wafer, preferably 0.01 to 10 N / 10 mm width, more preferably 0.05 to 5 N / 10 mm width. If the adhesive strength is too high, the cleaning layer or the like may be torn during peeling and removal. Further, the thickness of the adhesive layer is appropriately set according to the purpose. Preferably it is 1-100 micrometers, More preferably, it is 5-30 micrometers.

  The material configuration of the adhesive layer is not particularly limited, and for example, an adhesive layer made of a normal adhesive (preferably a pressure sensitive adhesive) such as acrylic or rubber is used. An acrylic adhesive is preferable. The main component of the acrylic adhesive is appropriately selected according to the purpose. For example, it can be obtained by subjecting a (meth) acrylic acid alkyl ester monomer to a mixture obtained by adding another copolymerizable monomer as necessary (mixing ratio is appropriately designed according to the purpose). Furthermore, the adhesive layer may contain an additive depending on the purpose. The weight average molecular weight of the main component of the adhesive layer is appropriately selected according to the purpose, and is preferably 100,000 to 1.3 million. By having these ranges, it can have desired adhesiveness. Moreover, the content rate of the main component of an adhesive bond layer is suitably selected according to the objective. Preferably it is 90 weight% or more of the whole adhesive bond layer.

  As the transport member 50, any appropriate substrate is used according to the type of substrate processing apparatus that is a target for removing foreign matter. Specific examples include semiconductor wafers (for example, silicon wafers), flat panel display substrates such as LCDs and PDPs, substrates such as compact disks and MR heads.

C. Cleaning Method A cleaning method according to a preferred embodiment of the present invention is a method for transporting the transport member with a cleaning function into a desired substrate processing apparatus and bringing it into contact with the site to be cleaned, thereby removing foreign matter adhering to the site to be cleaned. It can be removed easily and reliably.

  The substrate processing apparatus cleaned by the cleaning method is not particularly limited. Specific examples of the substrate processing apparatus include various apparatuses such as an exposure irradiation apparatus for circuit formation, a resist coating apparatus, a sputtering apparatus, an ion implantation apparatus, a dry etching apparatus, and a wafer prober in addition to the apparatus already described in this specification. And substrate processing apparatuses used at high temperatures such as ozone asher, resist coater, oxidation diffusion furnace, atmospheric pressure CVD apparatus, reduced pressure CVD apparatus, plasma CVD apparatus, and the like.

EXAMPLES Hereinafter, although an Example demonstrates this invention further more concretely, this invention is not limited by these Examples. The measurement and evaluation methods in the examples are as follows. In the examples, “parts” are based on weight.
(1) Arithmetic average roughness Ra and maximum height Rz
It measured according to JIS B0601. Specifically, in a stylus type surface roughness measuring device (trade name P-11, manufactured by Tencor), a diamond stylus having a curvature of 2 μm at the tip is used, a needle pressing force of 5 mg, and a measurement speed of 1 μm / second. (Measurement length 100 μm) Data was taken at a sampling period of 200 Hz. The arithmetic average roughness was calculated with a cut-off value of 25 to 80 μm.
(2) Real surface area per 1 mm ^{2 of the} cleaning layer The surface area was measured using an ultra-deep color 3D shape measuring microscope (manufactured by KEYENCE, VK-9500). As the sample, a cleaning layer formed on an 8-inch silicon wafer, glass or film was used. The measurement positions were 10 mm, 50 mm, and 90 mm from the center, the measurement area was 1 mm × 1 mm, and the average value of three locations was the surface area. The surface area of the silicon wafer of reference were measured plane 1 mm ² per 1.0002mm ^2.
(3) Tensile modulus Measured according to JIS K7127. Specifically, after forming a cleaning layer on a predetermined substrate, the cleaning layer was peeled off and measured using a dynamic viscoelasticity measuring apparatus.
(4) Peeling adhesive strength A cleaning layer was formed on the mirror surface of the silicon wafer, and measurement was performed according to JIS Z0237.
(5) Cleaning performance evaluation method Evaluation was performed by measuring the number of foreign matters of 0.200 μm or more on the silicon wafer mirror surface using a foreign matter inspection device (SFS6200, manufactured by KLA Tencor) (hereinafter referred to as device A). More specifically, the cleaning member is conveyed to a liner film peeling apparatus (manufactured by Nitto Seiki, HR-300CW) (hereinafter referred to as apparatus B) for manufacturing a cleaning sheet, and the number of foreign matters before and after the cleaning member is conveyed is measured. Evaluated by things. The specific method is as follows.
First, a new silicon wafer mirror surface was directed downward to the apparatus B so that the mirror surface automatically contacted the transfer arm or chuck table (face-down transfer). Then, the number of foreign matters adhering to the mirror surface was measured using the apparatus A (the number of foreign matters at this time is assumed to be “the number of foreign matters 1”). After that, the cleaning member of the present invention was transported to the apparatus B and the cleaning process was performed. Then, the new wafer was transported face down again, and the number of foreign substances adhered at that time was measured using the apparatus A (the number of foreign substances at this time was measured). “The number of foreign bodies is 2”). The foreign matter removal rate was calculated by the following equation as a parameter for the cleaning effect of the cleaning member.
Foreign matter removal rate = [100− (number of foreign matter 2) / (number of foreign matter 1) × 100]%
(6) Transportability After transporting onto the chuck table by the apparatus B, performing vacuum suction, releasing the vacuum, it was evaluated whether the cleaning member could be peeled off from the chuck table with the lift pins.

  To 100 parts of an acrylic polymer (weight average molecular weight 700,000) obtained from a monomer mixture consisting of 75 parts of 2-ethylhexyl acrylate, 20 parts of methyl acrylate, and 5 parts of acrylic acid, polyethylene glycol dimethacrylate (new Nakamura Chemical Co., Ltd., trade name: NK Ester 4G 200 parts, polyisocyanate compound (Japan Polyurethanes Co., Ltd., trade name: Coronate L) 3 parts and benzylmethyl ketal (Ciba Specialty Chemicals Co., Ltd., photopolymerization initiator, product Name: Irgacure-651) 3 parts were mixed uniformly to obtain a cleaning layer forming composition A (ultraviolet curable adhesive solution).

The composition A was applied to the mirror surface of a silicon wafer using a circular coater under the following conditions. Here, the circle coater is a device described in Japanese Patent Laid-Open No. 2001-310155, and the disclosure of the gazette is incorporated herein by reference.
Nozzle moving speed: 1.0 mm / sec Table rotation speed: 60 rpm
Coating direction: Wafer edge from center Discharge amount: 2.1 ml / sec Gap: 63 μm
The silicon wafer coated with the pressure-sensitive adhesive solution A was dried on a hot plate (ASAP, HB-01) at 150 ° C. for 10 minutes, and then the surface was treated with a protective film (non-silicone release agent). Long chain polyester film: 25 μm thick) was bonded. Next, the silicon wafer was irradiated with ultraviolet light having a central wavelength of 365 nm from the protective film side with an integrated light amount of 1000 mJ / cm ² to form a cleaning layer from the coating layer of the adhesive solution. Finally, the protective film was peeled off to obtain a conveying member A with a cleaning function. The thickness of the cleaning layer of the carrying member A is 16.4μm, Ra is 0.04 .mu.m, Rz is 0.82 .mu.m, real surface area per plane 1 mm ² of the cleaning layer is substantially the surface area per plane 1 mm ² of silicon wafer mirror surface It was 174%. Furthermore, the tensile elastic modulus of the cleaning layer was 1.5 MPa, and the 180 ° peel-off adhesive force to the mirror surface of the silicon wafer was 0.05 N / 10 mm.

  When the number of foreign matters of 0.200 μm or more on the mirror surface of a new particle-controlled 8-inch silicon wafer was measured using the apparatus A, it was 2. This wafer was conveyed face down to apparatus B, and the number of foreign matters of 0.200 μm or more was measured using apparatus A, and it was 8742 (the number of foreign substances was 1). Further, when the carrying member A with the cleaning function was carried to the apparatus B and the cleaning process was performed, the carrying member A could be carried without any trouble. After a new silicon wafer was face-down transferred to the apparatus B that had been subjected to the cleaning process, the number of foreign matters of 0.200 μm or more was measured using the apparatus A, and found to be 1924 (number of foreign substances 2). The foreign matter removal rate calculated from the foreign matter number 1 and the foreign matter number 2 was 78.0% as a whole.

30.0 g of ethylene-1,2-bistrimellitate, tetracarboxylic dianhydride (TMEG), and 65.8 g of a diamine (Ube Industries ATBN 1300X16, amine equivalent 900, acrylonitrile content 18%) represented by the following chemical formula: , 2,2′-bis [4- (4-aminophenoxy) phenyl] propane (BAPP) in nitrogen flow at 258 g of N-methyl-2-pyrrolidone (NMP) at 120 ° C. The mixture was mixed and reacted so that the solid content concentration was 30 wt%. This was cooled to obtain a polyamic acid solution B having a viscosity of 750 cp.

A silicon wafer having a polyamic acid coating layer was obtained in the same manner as in Example 1 except that the solution B was used. This silicon wafer was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a cleaning layer made of polyimide. In this way, a conveying member B with a cleaning function was obtained. The thickness of the cleaning layer of the carrying member B is 15.2μm, Ra is 0.03 .mu.m, Rz is 0.80 .mu.m, real surface area per plane 1 mm ² of the cleaning layer is substantially the surface area per plane 1 mm ² of silicon wafer mirror surface It was 193%. Furthermore, the tensile elastic modulus of the cleaning layer was 420 MPa, and the 180 ° peel adhesive strength with respect to the mirror surface of the silicon wafer was 0.03 N / 10 mm.

  When the number of foreign matters of 0.200 μm or more on the mirror surface of a new particle-controlled 8-inch silicon wafer was measured using the apparatus A, it was 3. This wafer was conveyed face down to apparatus B, and the number of foreign objects of 0.200 μm or more was measured using apparatus A, and it was 9684 (the number of foreign substances is 1). Further, when the carrying member B with the cleaning function was carried to the apparatus B and the cleaning process was performed, it could be carried without any trouble. After a new silicon wafer was transferred face-down to the apparatus B that had been subjected to the above cleaning process, the number of foreign matters of 0.200 μm or more was measured using the apparatus A, and it was 1462 (the number of foreign substances 2). The foreign matter removal rate calculated from the foreign matter number 1 and the foreign matter number 2 was 84.9% as a whole.

(Comparative Example 1)
A conveying member C with a cleaning function was obtained in the same manner as in Example 2 except that the coating conditions were as follows. The thickness of the cleaning layer of the carrying member C is 14.7μm, Ra is 0.78 .mu.m, Rz is 1.54 .mu.m, real surface area per plane 1 mm ² of the cleaning layer is substantially the surface area per plane 1 mm ² of silicon wafer mirror surface 121%.
Nozzle moving speed: 1.5 mm / sec Table rotation speed: 60 rpm
Coating direction: Wafer edge from center Discharge amount: 2.1 ml / sec Gap: 50 μm

  When the number of foreign matters of 0.200 μm or more on the mirror surface of a new particle-controlled 8-inch silicon wafer was measured using the apparatus A, it was 3. This wafer was conveyed face down to apparatus B, and the number of foreign objects of 0.200 μm or more was measured using apparatus A, and found to be 11035 (1 number of foreign substances). Further, when the carrying member C with the cleaning function was carried to the apparatus B and the cleaning process was performed, it was able to be carried without any trouble. After a new silicon wafer was face-down transferred to the apparatus B that had been subjected to the above cleaning process, the number of foreign objects of 0.200 μm or more was measured using the apparatus A, and it was 8350 (number of foreign substances 2). The foreign matter removal rate calculated from the foreign matter number 1 and the foreign matter number 2 was 24.3% as a whole.

For 100 parts of an acrylic polymer (weight average molecular weight 700,000) obtained from a monomer mixture consisting of 75 parts of 2-ethylhexyl acrylate, 20 parts of methyl acrylate, and 5 parts of acrylic acid, 50 parts of urethane acrylate, benzyl 3 parts of methyl ketal and 3 parts of diphenylmethane diisocyanate were uniformly mixed to obtain a cleaning layer forming composition. This composition was cured on a release treatment surface of a polyester release liner (thickness: 38 μm, arithmetic average roughness Ra of the release treatment surface: 0.4 μm, maximum height Rz: 0.92 μm) (that is, The resulting cleaning layer was applied so that the thickness of the cleaning layer was 35 μm, thereby preparing a laminate.
On the other hand, an adhesive solution obtained in the same manner as above except that the benzyl methyl ketal was removed from the cleaning layer forming composition was dried on one side of a polyethylene terephthalate support having a width of 250 mm and a thickness of 75 μm. The adhesive layer was provided by applying and drying to a thickness of 20 μm, and a polyester release liner (thickness: 38 μm) was attached to the surface.
On the other side of the support, a cleaning layer-forming composition coating layer of the laminate was affixed. Subsequently, a cleaning layer was formed from the coating layer by irradiating ultraviolet rays having a central wavelength of 365 nm with an integrated light quantity of 1000 mJ / cm ² to obtain a cleaning sheet of the present invention. The Ra of the cleaning layer from which the separator liner was peeled was 0.37 μm, Rz was 0.78 μm, and the actual surface area per 1 mm ² of the plane of the cleaning layer was 182% of the actual surface area per 1 mm ² of the plane of the silicon wafer mirror. Further, regarding the tensile elastic modulus of the cleaning layer, a measurement sample was separately prepared and calculated in the same manner as in the above preparation method. As a result, the tensile elastic modulus of the cleaning layer was 90 MPa.

  The release liner on the adhesive layer side of the cleaning sheet obtained above was peeled off and attached to the mirror surface of an 8-inch silicon wafer with a hand roller to obtain a transport member D with a cleaning function.

  On the other hand, when two wafer stages of the substrate processing apparatus were removed and the number of foreign matters of 0.300 μm or more on the mirror surface of the 8-inch silicon wafer was measured using the apparatus A, it was 20300. The release liner on the cleaning layer side of the transport member D was peeled off, and transported through a substrate processing apparatus having a wafer stage on which 20300 foreign substances had adhered, to perform a cleaning process. When the cleaning process was repeated three times, it could be transported without any problem three times. Thereafter, the wafer stage was removed, and the number of foreign matters of 0.300 μm or more on the mirror surface of the 8-inch silicon wafer was measured. As a result, it was 6050, and 2/3 or more of the foreign matters adhered before the cleaning process could be removed. did it.

(Comparative Example 2)
A carrying member E with a cleaning function was produced in the same manner as in Example 3 except that ultraviolet irradiation was not performed. When the transfer member E was transferred through the substrate processing apparatus, the transfer member was fixed to the wafer stage and could not be transferred.

(Comparative Example 3)
A carrying member F with a cleaning function was produced in the same manner as in Example 1 except that a cleaning layer was formed on a release liner having a surface roughness Ra of 0.02 μm and Rz of 0.08 μm. The cleaning layer Ra of this conveying member was 0.02 μm, Rz was 0.07 μm, and the actual surface area per 1 mm ² of the plane of the cleaning layer was 116% of the actual surface area per 1 mm ² of the plane of the silicon wafer mirror surface. The conveying member F was conveyed and cleaned in the substrate processing apparatus. When the cleaning process was repeated three times, it could be transported without any problem three times. However, the foreign matter removal rate by the cleaning process was 32.8%, and the foreign matter could not be removed sufficiently.

  44.27 g of polyoxypropylenediamine (manufactured by Mitsui Chemicals Fine, XTJ-510) and 25.34 g of 4,4'-diaminodiphenyl ether were dissolved in 398.44 g of N-methyl-2-pyrrolidone. Next, 30.00 g of pyromellitic dianhydride was added and reacted. This was cooled to obtain a polyamic acid solution G.

A silicon wafer having a polyamic acid coating layer was obtained in the same manner as in Example 1 except that the polyamic acid solution G was used. This silicon wafer was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a cleaning layer made of polyimide. In this way, a conveyance member G with a cleaning function was obtained. The thickness of the cleaning layer of the conveying member B is 11.4 μm, Ra is 40 nm, Rz is 60 nm, and the actual surface area per 1 mm ^{2 of the} cleaning layer plane is 172% of the actual surface area per 1 mm ² plane of the silicon wafer mirror surface. It was. Furthermore, the tensile elastic modulus of the cleaning layer was 200 MPa, and the 180 ° peeling adhesive strength with respect to the mirror surface of the silicon wafer was 0.04 N / 10 mm.

  When the number of foreign matters of 0.200 μm or more on the mirror surface of a new particle-controlled 8-inch silicon wafer was measured using the apparatus A, it was one. This wafer was conveyed face down to apparatus B, and the number of foreign objects of 0.200 μm or more was measured using apparatus A, and found to be 14230 (number of foreign substances 1). Further, when the carrying member G with the cleaning function was carried to the apparatus B and the cleaning process was performed, the carrying member G could be carried without any trouble. After a new silicon wafer was face-down transferred to the apparatus B that had been subjected to the cleaning process, the number of foreign matters of 0.200 μm or more was measured using the apparatus A, and found to be 2613 (number of foreign substances 2). The foreign matter removal rate calculated from the foreign matter number 1 and the foreign matter number 2 was 81.6% as a whole.

  As is apparent from the results of Examples and Comparative Examples, the foreign substance removal performance having a particle diameter of 0.2 μm or more can be remarkably improved by forming the cleaning layer with a predetermined surface roughness.

  The carrying member with a cleaning function of the present invention is suitably used for cleaning substrate processing apparatuses such as various manufacturing apparatuses and inspection apparatuses.

It is a schematic sectional drawing of the cleaning sheet by preferable embodiment of this invention. It is a conceptual diagram explaining the nozzle method. It is a schematic sectional drawing of the conveyance member with a cleaning function by preferable embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Support body 20 Cleaning layer 30 Release liner 40 Adhesive layer 50 Conveying member 100 Cleaning sheet 200 Conveying member with a cleaning function

Claims (8)

  A cleaning sheet comprising a cleaning layer having a concavo-convex shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less.   The cleaning sheet according to claim 1, wherein the uneven shape has a groove structure. The cleaning sheet according to claim 1 or 2, wherein a substantial surface area per 1 mm ^{2 of the} cleaning layer is 150% or more of a substantial surface area per 1 mm ² of the silicon wafer mirror surface.   The cleaning sheet according to any one of claims 1 to 3, wherein the cleaning layer has a tensile elastic modulus of 0.98 MPa to 4900 MPa.   A transport member with a cleaning function, comprising: a transport member; and the cleaning layer according to claim 1 provided on at least one surface of the transport member.   The conveyance member with a cleaning function according to claim 5, wherein the cleaning layer is directly attached to the conveyance member.   The conveyance member with a cleaning function according to claim 5, wherein the cleaning layer is attached to the conveyance member via a pressure-sensitive adhesive layer. A cleaning method for a substrate processing apparatus, comprising transporting the cleaning sheet according to any one of claims 1 to 4 or the transport member with a cleaning function according to any one of claims 5 to 7 into the substrate processing apparatus.

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