JP2007123333A - 露光方法 - Google Patents

露光方法 Download PDF

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Publication number
JP2007123333A
JP2007123333A JP2005309799A JP2005309799A JP2007123333A JP 2007123333 A JP2007123333 A JP 2007123333A JP 2005309799 A JP2005309799 A JP 2005309799A JP 2005309799 A JP2005309799 A JP 2005309799A JP 2007123333 A JP2007123333 A JP 2007123333A
Authority
JP
Japan
Prior art keywords
pattern
pyo
pxo
pitch
pupil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005309799A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007123333A5 (enExample
Inventor
Miyoko Kawashima
美代子 川島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005309799A priority Critical patent/JP2007123333A/ja
Priority to US11/552,295 priority patent/US7547502B2/en
Publication of JP2007123333A publication Critical patent/JP2007123333A/ja
Publication of JP2007123333A5 publication Critical patent/JP2007123333A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2005309799A 2005-10-25 2005-10-25 露光方法 Pending JP2007123333A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005309799A JP2007123333A (ja) 2005-10-25 2005-10-25 露光方法
US11/552,295 US7547502B2 (en) 2005-10-25 2006-10-24 Exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005309799A JP2007123333A (ja) 2005-10-25 2005-10-25 露光方法

Publications (2)

Publication Number Publication Date
JP2007123333A true JP2007123333A (ja) 2007-05-17
JP2007123333A5 JP2007123333A5 (enExample) 2008-12-11

Family

ID=37985791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005309799A Pending JP2007123333A (ja) 2005-10-25 2005-10-25 露光方法

Country Status (2)

Country Link
US (1) US7547502B2 (enExample)
JP (1) JP2007123333A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007311794A (ja) * 2006-05-15 2007-11-29 Advanced Mask Technology Center Gmbh & Co Kg 照射系およびフォトリソグラフィ装置
JP2009239254A (ja) * 2008-03-03 2009-10-15 Toshiba Corp 半導体装置の製造方法
JP2010092079A (ja) * 2010-01-27 2010-04-22 Nikon Corp 液晶表示素子の製造方法及び露光装置
JP2011238706A (ja) * 2010-05-07 2011-11-24 Canon Inc 決定方法、露光方法及びプログラム
US9377677B2 (en) 2009-08-10 2016-06-28 Canon Kabushiki Kaisha Generating method, creating method, exposure method, and storage medium

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7906255B2 (en) * 2007-01-05 2011-03-15 Georgia Tech Research Corporation Photo-masks and methods of fabricating periodic optical structures
JP2010074026A (ja) * 2008-09-22 2010-04-02 Toshiba Corp 露光方法、及び半導体装置
JP2010199347A (ja) * 2009-02-26 2010-09-09 Canon Inc 露光方法及びデバイス製造方法
KR101087874B1 (ko) * 2009-06-29 2011-11-30 주식회사 하이닉스반도체 광학 근접 효과 보상 방법
US8556901B2 (en) 2009-12-31 2013-10-15 DePuy Synthes Products, LLC Reciprocating rasps for use in an orthopaedic surgical procedure
US8506569B2 (en) 2009-12-31 2013-08-13 DePuy Synthes Products, LLC Reciprocating rasps for use in an orthopaedic surgical procedure
JP2012064898A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 露光方法及び半導体装置の製造方法
US8486076B2 (en) 2011-01-28 2013-07-16 DePuy Synthes Products, LLC Oscillating rasp for use in an orthopaedic surgical procedure
US8739078B2 (en) * 2012-01-18 2014-05-27 International Business Machines Corporation Near-neighbor trimming of dummy fill shapes with built-in optical proximity corrections for semiconductor applications
US20140313469A1 (en) * 2013-04-22 2014-10-23 Nec Laboratories America, Inc. RECONFIGURABLE 1xN FEW-MODE FIBER OPTICAL SWITCH BASED ON A SPATIAL LIGHT MODULATOR

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11109603A (ja) * 1997-10-06 1999-04-23 Mitsubishi Electric Corp フォトマスクおよび半導体装置の製造方法
JP2002122976A (ja) * 2000-10-13 2002-04-26 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004272228A (ja) * 2003-02-21 2004-09-30 Canon Inc マスク及びその製造方法、露光装置及び方法、並びに、デバイス製造方法
WO2004090952A1 (ja) * 2003-04-09 2004-10-21 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
WO2005076045A1 (ja) * 2004-02-06 2005-08-18 Nikon Corporation 偏光変換素子、照明光学装置、露光装置、および露光方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534242B2 (en) * 1997-11-06 2003-03-18 Canon Kabushiki Kaisha Multiple exposure device formation
JP3323815B2 (ja) 1998-07-21 2002-09-09 キヤノン株式会社 露光方法及び露光装置
JP3870093B2 (ja) 2002-01-08 2007-01-17 キヤノン株式会社 露光方法及び装置
JP3977096B2 (ja) 2002-02-13 2007-09-19 キヤノン株式会社 マスク、露光方法及びデバイス製造方法
US7107573B2 (en) * 2002-04-23 2006-09-12 Canon Kabushiki Kaisha Method for setting mask pattern and illumination condition
JP3754934B2 (ja) 2002-04-23 2006-03-15 キヤノン株式会社 マスクパターン及び照明条件の設定方法
EP1450206B1 (en) * 2003-02-21 2016-04-20 Canon Kabushiki Kaisha Mask and its manufacturing method, exposure, and semiconductor device fabrication method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11109603A (ja) * 1997-10-06 1999-04-23 Mitsubishi Electric Corp フォトマスクおよび半導体装置の製造方法
JP2002122976A (ja) * 2000-10-13 2002-04-26 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004272228A (ja) * 2003-02-21 2004-09-30 Canon Inc マスク及びその製造方法、露光装置及び方法、並びに、デバイス製造方法
WO2004090952A1 (ja) * 2003-04-09 2004-10-21 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
WO2005076045A1 (ja) * 2004-02-06 2005-08-18 Nikon Corporation 偏光変換素子、照明光学装置、露光装置、および露光方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007311794A (ja) * 2006-05-15 2007-11-29 Advanced Mask Technology Center Gmbh & Co Kg 照射系およびフォトリソグラフィ装置
JP2009239254A (ja) * 2008-03-03 2009-10-15 Toshiba Corp 半導体装置の製造方法
US8293456B2 (en) 2008-03-03 2012-10-23 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method
US8679731B2 (en) 2008-03-03 2014-03-25 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method
US9377677B2 (en) 2009-08-10 2016-06-28 Canon Kabushiki Kaisha Generating method, creating method, exposure method, and storage medium
JP2010092079A (ja) * 2010-01-27 2010-04-22 Nikon Corp 液晶表示素子の製造方法及び露光装置
JP2011238706A (ja) * 2010-05-07 2011-11-24 Canon Inc 決定方法、露光方法及びプログラム

Also Published As

Publication number Publication date
US20070092841A1 (en) 2007-04-26
US7547502B2 (en) 2009-06-16

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