JP2007118354A - Jig for supporting ingot - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a jig for supporting an ingot which is used to support the ingot when a wafer is cut from the ingot and can suppress the cracking, breaking, and distortion of the wafer even when the wafer and the jig supporting the wafer, are cut together and separated. <P>SOLUTION: The ceramic jig 12 for supporting the ingot is used which is composed of a hollow ceramic structure 15 having a concavely curved surface 24 supporting the ingot along its surface shape when the cylindrical ingot made of a semiconductor material is cut in a wafer shape on an upper surface and a plurality of cavities 16 extending in the longitudinal direction Y of the curved surface 24 in the inside and in which the shapes of the cross sections crossing at right angles to the longitudinal direction Y of the cavities 16 are approximately the same. In this way, the breakage of the jig 12 during the cutting of the ingot is suppressed by an action to reduce stress applied to the jig 12 from a cutting edge, suppressing the distortion, cracking, breaking of the wafer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a jig for supporting an ingot used for supporting a single crystal or polycrystalline ingot and cutting it into a wafer.

  Conventionally, when a semiconductor single crystal or polycrystalline silicon ingot is cut into a wafer, an ingot supporting jig is used to fix the ingot to a cutting device such as a slicer or a wire saw. The ingot supporting jig on which the ingot is placed and fixed is further fixed to the fixing jig and incorporated in the cutting device, and the ingot is cut together with the ingot supporting jig. The ingot is fixed to the ingot supporting jig by an adhesive.

  The cut wafer-like ingot and the ingot supporting jig are taken out from the cutting apparatus while being fixed to the fixing jig, and then separated from the fixing jig. The wafer-like ingot (hereinafter simply referred to as a wafer) and the thin piece of the ingot supporting jig are separated by being immersed in hot water or heated with a heater or the like to melt the adhesive.

  As such an ingot supporting jig, a carbon ingot supporting jig described in Patent Documents 1 and 2, a glass, a resin, or a thermosetting resin described in Patent Documents 3 and 5 are used. An ingot supporting jig made of a material in which an inorganic filler and a reinforcing fiber are blended is known.

  FIG. 5 is a perspective view showing a state in which the ingot, the ingot supporting jig, and the fixing jig are fixed. 6A is a perspective view showing a state where the ingot is bonded and fixed to the concave curved surface of the ingot supporting jig, and is cut into a wafer shape. FIG. 6B is a view showing a wafer connected to the cut thin piece at a high temperature. The schematic diagram of the state immersed in the tank is shown.

  Hereinafter, description will be made with reference to these drawings.

  The ingot supporting jig 90 has a concave curved surface (not shown) for supporting the cylindrical ingot 88 on the upper surface, and the ingot 88 is fixed on the concave curved surface using an adhesive. Further, the ingot supporting jig 90 is fixed to the upper surface of the fixing jig 92 with an adhesive while the ingot 88 is fixed.

  In Patent Literature 1, carbon is used as the material of the ingot support jig 90 and a cutting device (not shown) is attached with the ingot support jig 90 to which the ingot 88 is fixed fixed to the upper surface of the fixing jig 92. A processing method is described in which the ingot 88 and the ingot supporting jig 90 are both cut by placing.

  Patent Document 2 also discloses a jig for supporting a carbon ingot having a concave curved surface on its upper part as a jig for supporting the ingot 71 when the wafer 74 is manufactured by cutting the ingot 71 into a wafer. The use of tool 72 is described. The ingot 71 is fixed to the concave curved surface of the ingot support jig 72 using an adhesive, and then the ingot 71 and the ingot support jig 72 are mounted on a cutting device and cut into a wafer shape. The cut wafer 74 and the thin piece 73 cut from the ingot supporting jig 72 are connected by an adhesive (not shown). Then, the wafer 74 is immersed in the high temperature bath 70 filled with hot water or the like by immersing the cut thin piece 73 and the wafer 74 connected with the adhesive, and heating and melting the adhesive with hot water or the like. A method of separating from the cut flake 73 is shown.

  Further, Patent Document 3 describes a plate-like support member (ingot support jig) made of a glass material for slicing an ingot made of a semiconductor material. The wire saw is bonded to the support member. A method for manufacturing a plurality of semiconductor substrates (wafers) is described.

Furthermore, Patent Document 4 describes that thermosetting properties are provided for the purpose of providing all required physical properties such as strength, rigidity, heat resistance, dimensional stability, oil resistance, and hardness, which are physical properties required for an ingot supporting jig. A semiconductor crystal ingot supporting jig using a molding material in which an inorganic filler and reinforcing fibers are blended with a resin is described in a plate-like body and a shape having a concave curved surface on the upper surface.
JP 53-126258 A JP-A-8-45881 JP 2005-19823 JP 2005-183839 A

  However, since the carbon ingot supporting jigs 72 and 90 described in Patent Documents 1 and 2 are brittle and have low mechanical strength, they are easily damaged when stress is applied. As a result, when ingots 71 and 88 are loaded or stress from a cutting blade (not shown) during cutting is applied to the ingot supporting jigs 72 and 90, the ingot supporting jigs 72 and 90 may break. There is a problem that the wafer 74 is cracked, and further, the wafer 74 is cracked or broken during or after the ingots 71 and 88 are cut. Further, immediately after the wafer 74 is cut out from the ingots 71 and 88, the wafer 74 is in a state of being connected to the cut thin piece 73 by an adhesive, and the cut thin piece 73 and the wafer 74 are separated from this state. In this case, it is necessary to heat the cut thin piece 73, the wafer 74, and the adhesive together for a long time to melt the adhesive. However, if the wafer 74 cut from the ingots 71 and 88 is immersed in a high-temperature liquid for a long time together with the thin pieces 73 cut at the same time, there is a problem that distortion and cracks occur in the wafer 74.

Moreover, since the plate-shaped ingot supporting jig described in Patent Document 3 is made of glass which is a brittle material, there is a problem that the ingot supporting jig is broken by the load of the ingot. Furthermore, the glass used for this ingot supporting jig has a thermal expansion coefficient of about 10 × 10 ⁻⁶ / ° C., which is 2 × 10 ^{−6 to} 6 × 10 which is a thermal expansion coefficient of an ingot which is a general semiconductor material. Because it is very high compared to about ^-6 / ° C, the ingot support jig expands greatly due to the heat generated when the ingot is cut with the wire, and the ingot and the ingot support jig are separated during the cutting. There was a problem that the ingot could not be processed.

  In addition, the plate-shaped ingot support jig made of glass, carbon material, or resin disclosed in Patent Document 4 has a cutting blade that cuts compared to an ingot support jig that has a concave curved surface for bonding to the ingot. Since the area is increased, the cutting resistance is increased, and there is a problem in that a large distortion occurs in the wafer due to the stress received from the cutting blade, and cracks and cracks occur.

  The present invention relates to an ingot support jig used to support an ingot when a wafer is cut out from the ingot, and when the ingot is cut with a cutting blade together with the ingot support jig, the load of the ingot and cutting during cutting It is possible to suppress wafer distortion, cracks and cracks due to cutting blade distortion due to stress received from the blade and cutting resistance of the ingot support jig, and long when separating the ingot support jig flake from the wafer after cutting. An object of the present invention is to provide a jig for supporting an ingot that can suppress distortion, cracking and cracking of a wafer caused by exposure to high temperatures for a long time.

  A jig for supporting an ingot according to the present invention has a concave curved surface for supporting the ingot along the surface shape of a cylindrical ingot made of a semiconductor material on the upper surface, and a plurality of cavities extending along the longitudinal direction of the concave curved surface The plurality of cavities have substantially the same cross-sectional shape perpendicular to the longitudinal direction.

  The ingot supporting jig of the present invention is characterized in that, in the above structure, the opening ratio of the cavity in the cross section perpendicular to the longitudinal direction of the cavity of the hollow structure is 30 to 70%. is there.

  Furthermore, the jig for supporting an ingot according to the present invention is characterized in that, in each of the above configurations, the ceramic has a porosity of 30 to 70% by volume.

  Further, in the ingot supporting jig of the present invention, in each of the above-described configurations, the hollow structure has a honeycomb-like cross-sectional shape perpendicular to the longitudinal direction of the cavity, in which the plurality of cavities each serve as a flow path for flowing fluid. It has the honeycomb structure part which comprises the cell, and the outer wall which is arrange | positioned on the outer periphery of this honeycomb structure part, and comprises the outer peripheral surface of the said hollow structure.

  Furthermore, the jig for supporting an ingot according to the present invention is characterized in that, in each of the above structures, an average thickness between the cavities is 0.1 to 1 mm.

The ingot supporting jig of the present invention is characterized in that, in each of the above structures, the ceramic has a thermal expansion coefficient of 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C.

  Furthermore, the jig for supporting an ingot according to the present invention is characterized in that, in each of the above structures, the ceramic is made of cordierite.

  Since the ingot supporting jig of the present invention is made of ceramics and has high mechanical strength, there is no possibility that the ingot supporting jig is broken by the load of the ingot or the stress received from the cutting blade through the ingot. In addition, since the shape of the cross section orthogonal to the longitudinal direction has substantially the same cavity, when the ingot is cut, the stress that the ingot supporting jig receives from the cutting blade is cut regardless of the location. Since it can be reduced, damage to the ingot supporting jig during ingot cutting can be suppressed, and distortion, cracking, and cracking of the wafer can be suppressed. In addition, high temperature liquid enters the cavity and the ingot support jig is easily heated. After the ingot is supported by the ingot support jig, the wafer is cut to produce a wafer, and then the wafer is treated for ingot support in a short time. It can be separated from the tool. As a result, it is possible to solve the problem that the wafer is distorted or cracked.

  In the ingot supporting jig of the present invention, in each of the above-described structures, the cavity has an open area ratio of 30 to 70% in a cross section perpendicular to the longitudinal direction of the cavity, or the ceramics In the case of a porous body having a porosity of 30 to 70% by volume, the contact area between the cutting blade and the ingot supporting jig when cutting while maintaining the mechanical strength of the ingot supporting jig sufficiently Less. As a result, the cutting resistance received by the cutting blade from the ingot supporting jig can be reduced, and cracks and cracks can be suppressed. In addition, the high-temperature liquid enters the cavity satisfactorily, and the ingot supporting jig is easily warmed, and the wafer can be further separated from the ingot supporting jig.

  In the ingot support jig of the present invention, in each of the above-described configurations, the hollow structure has a honeycomb-like cross-sectional shape perpendicular to the longitudinal direction of the cavities, each of which serves as a flow path through which the plurality of cavities flow. In the case of having a honeycomb structure part constituting the cell and an outer wall disposed on the outer periphery of the honeycomb structure part and constituting the outer peripheral surface of the hollow structure body, Since the cross section perpendicular to the longitudinal direction of the tool is formed in a regular polygonal lattice shape, that is, the ceramics between the cavities across the longitudinal direction, that is, the partition walls are regularly formed, soak the flakes in a high-temperature liquid. When the adhesive is melted, the high-temperature liquid entering the cell easily flows. For this reason, between cells can be warmed in a particularly short time, and as a result, heat is transferred to the adhesive in a shorter time, so that the time for separating the wafer from the flakes can be further shortened.

  When stress is applied to the ingot support jig, the stress is distributed substantially uniformly over the whole of the plurality of partition walls, thereby preventing local stress concentration from being applied to a part of the partition walls. The mechanical strength of the ingot supporting jig can be improved, and the risk of the ingot supporting jig being broken can be eliminated.

  Furthermore, the ingot supporting jig of the present invention has a low cutting resistance when cutting while maintaining the strength of the ingot supporting jig when the thickness between the cavities is 0.1 to 1 mm in each of the above configurations. Since it can hold | maintain in a state, the possibility that the ingot support jig | tool may be destroyed can further be eliminated.

In the ingot supporting jig of the present invention, the thermal expansion coefficient of the ingot is ingot when the ceramic has a thermal expansion coefficient of 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C. Only the ingot support jig is not greatly expanded due to the heat generated when cutting the wire with the wire, and the ingot support jig and the ingot can be prevented from being separated during the cutting. The flakes can be eliminated and, at the same time, wafer distortion can be eliminated.

Furthermore, the ingot supporting jig of the present invention has a low coefficient of thermal expansion of about 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C. when the ceramics is made of cordierite in each of the above-described configurations. Since it has a sufficient strength and can further reduce the cutting resistance, it can be particularly effectively prevented that a crack or the like is generated in a wafer obtained by cutting.

  Hereinafter, the ingot supporting jig of the present invention will be described with reference to the accompanying drawings.

  FIG. 1A is a perspective view showing an example of an ingot supporting jig of the present invention, and FIG. 1B is a cross-sectional view taken along line A-A ′ of FIG. FIG. 2A is a perspective view showing a fixing jig and an ingot for fixing the ingot supporting jig of the present invention, and FIG. 2B is a diagram in which the ingot and the ingot supporting jig are bonded to the fixing jig. The side view which shows a state, (c) is sectional drawing in CC 'line of (b). Further, FIG. 3A is a schematic view of the state where the ingot is cut into a wafer shape, and FIG. 3B is a partially broken view of the state where the ingot supporting jig of FIG. It is a perspective view shown. In addition, when showing the same site | part in these figures, the same code | symbol is attached | subjected.

  This ingot supporting jig 12 has a concave curved surface 24 for supporting the ingot 22 along the surface shape of a cylindrical ingot 22 made of a semiconductor material on the top surface, and the opposite side to the concave curved surface 24 is a flat bottom surface. There are as 20. The ingot supporting jig 12 is composed of a ceramic hollow structure 15 having a plurality of cavities 16 extending along the longitudinal direction Y of the concave curved surface 24. The plurality of cavities 16 are formed in the longitudinal direction Y. The cross-sectional shapes orthogonal to each other are configured to be substantially the same. Here, the shape of the cross section is substantially the same, for example, as shown in FIG. 1A, it has a concave curved surface over the entire longitudinal direction Y, and the positions of the holes are substantially the same. . The fixing jig 11 is fixed to the base bottom surface 20 of the ingot supporting jig 12 by using an adhesive 29 that easily melts into a liquid having a temperature lower than that of the adhesive 28, and the ingot 22 is further bonded to the thermoplastic resin. It is fixed to the ingot supporting jig 12 with the agent 28. Here, the thermoplastic adhesive refers to an adhesive that melts and fluidizes when heated to a temperature higher than room temperature, for example, 60 ° C. or higher. Thereby, the ingot 22, the ingot support jig 12, and the fixing jig 11 are arranged in the order shown in FIG.

  Then, the fixing jig 11 side is attached to the cutting device, and as shown in FIG. 3A, the ingot 22 and the ingot supporting jig 12 that supports the ingot 22 are cut at a desired interval by the rotating cutting blade 14. The plurality of wafers 26 cut out from the ingot 22 and the plurality of thin pieces 46 cut out from the ingot supporting jig 12 are connected by the adhesive 28, and the plurality of thin pieces 46 and the fixing jig 11 are further connected to the adhesive 29. It will be in a connected state.

  Subsequently, the wafer 26, the thin piece 46 and the fixing jig 11 connected to each other are taken out from the cutting device, and the end face of each wafer 26 is gripped with a heat resistant resin (not shown), and then the thin piece 46 and The fixing jig 11 is removed by releasing the fixing with the adhesive 29 between the fixing jig 11 and the thin piece 46 side is immersed in the liquid 32 in the high-temperature tank 44 as shown in FIG. By melting the agent 28, the wafer 26 and the flake 46 are separated. As the liquid 32, hot water or methylphenyl silicone oil can be used. Here, the methylphenyl silicone oil has a polymer chain structure in which a silicon-oxygen bond is repeated as a main chain, and a silicon atom contained in the main chain includes a methyl group, a phenyl group, and a hydrogen atom. A part of the side chain of straight silicone oil to which any of the above is bonded is a phenyl group.

  Since the ingot support jig 12 is made of ceramics and has high mechanical strength, the ingot support jig 12 may be broken by the load of the ingot 22 or the stress received from the cutting blade 14 through the ingot 22. There is no. Further, since the cavity 16 having substantially the same cross-sectional shape perpendicular to the longitudinal direction Y is provided, the ingot supporting jig 12 can be cut at any location when the ingot 22 is cut. Therefore, the ingot supporting jig 12 can be prevented from being damaged during the cutting of the ingot 22, and the distortion, cracking and cracking of the wafer 26 can be suppressed. Since the ceramic hollow structure 15 having the cavity 16 therein is used, even if the ceramic ingot support jig 12 that is harder than glass or carbon is used, the cutting blade 14 can be Even when the supporting jig 12 starts to be cut, it does not receive a large cutting resistance, so that the cutting blade 14 is distorted, and no stress is applied to the wafer 26, thereby preventing the occurrence of cracks, cracks and distortion. In addition, since the plurality of cavities 16 are configured so that the cross-sectional shapes orthogonal to the longitudinal direction Y are substantially the same, no matter which part of the ingot 22 is cut and the wafer 26 is processed, the cutting is performed. Since the blade 14 is distorted and no stress is applied to the wafer 26, the occurrence of cracks, cracks and distortion can be prevented.

  In addition, each of the cavities 16 of the plurality of thin pieces 46 connected to the plurality of wafers 26 has substantially the same shape in any of the thin pieces 46, and the amount of the high-temperature liquid 32 entering the cavity 16 is also the same. Since the wafer 26 and the thin piece 46 can be separated in almost the same time, the wafer 26 and the thin piece 46 can be separated efficiently.

  In addition, the ingot support jig 12 can reduce the stress received from the cutting blade 14, so that the ingot support jig 12 can be prevented from being damaged during cutting, and the wafer 26 can be prevented from being distorted, cracked or cracked. can do.

  Furthermore, by passing the high temperature liquid 32 into the cavity 16 in the longitudinal direction Y, the high temperature liquid 32 can enter the cavity 16 and the ingot support jig 12 can be easily heated. Then, the wafer 26 can be separated from the ingot supporting jig 12 in a short time after the wafer 26 is produced by cutting while supporting the ingot 22.

  The hollow structure 15 preferably has an opening ratio of the cavity 16 of 30 to 70% in a cross section perpendicular to the longitudinal direction Y of the cavity 16. Alternatively, the ceramic used for the ingot supporting jig 12 is preferably a porous body having a porosity of 30 to 70% by volume. The opening ratio of the ingot supporting jig 12 is set to 30 to 70%, or the ceramic is made of a porous body, and the porosity is set to 30 to 70% by volume, whereby the mechanical strength of the ingot supporting jig 12 is increased. Since the contact area between the cutting blade 14 and the ingot supporting jig 12 during cutting can be reduced while maintaining sufficient strength, the cutting resistance that the cutting blade 14 receives from the ingot supporting jig 12 during cutting can be reduced. It can be reduced and cracks and cracks can be suppressed. Further, the hot liquid 32 enters the cavity 16 well, and the ingot supporting jig 12 is easily warmed, so that the wafer 26 can be further separated from the ingot supporting jig 12.

  The opening ratio of the cavity 16 is the area ratio (%) of the cavity 16 in the entire cross section of the ingot supporting jig 12 (the total area of the cavity 16 and the ceramic). As a specific measurement method, a three-dimensional measuring machine XYZAX RA1600A-61X manufactured by Tokyo Seimitsu Co., Ltd. is used, and the gate is numerically driven by a servomotor with the cross section perpendicular to the Y direction of the ingot support jig 12 as the top surface For ingot support from the data obtained by bringing the contacted probe fixed to the mold orthogonal XYZ table and attached to the Z-axis tip of the table into contact with the cross section of the ingot support jig 12 by computer control in 3D coordinates The area of the entire cross section of the jig 12 and the area of the cavity 16 may be calculated, and the area ratio (%) of the cavity 16 in the entire cross section of the ingot supporting jig 12 may be obtained as the opening ratio (%). Further, the porosity of the ingot supporting jig 12 may be measured using the Archimedes method.

  Next, another example of the hollow structure of the ingot supporting jig of the present invention will be described with reference to the drawings.

  FIG. 4A is a perspective view showing another example of the ingot supporting jig of the present invention, and FIG. 4B is an enlarged cross-sectional view taken along line B-B ′ of FIG. In addition, in these, when showing the same site | part as FIGS. 1-3, the same code | symbol is attached | subjected.

  In FIG. 1A, the hollow structure 15 of the ingot support jig 12 is composed of a plurality of cavities 16. In addition, the cross-sectional shape perpendicular to the longitudinal direction Y of the cavity 16 serving as a flow path for flowing a fluid (high-temperature liquid 32) respectively constitutes a honeycomb-shaped cell 19 as shown in FIG. 4A. It has a honeycomb structure portion 18 and an outer wall 42 that is disposed on the outer periphery of the honeycomb structure portion 18 and constitutes the outer peripheral surface 40 of the hollow structure 15. The hollow structure 15 of the ingot supporting jig 13 includes a cell 19, a partition wall 17 (a wall between adjacent cavities 16), and an outer wall 42, and follows the surface shape of a cylindrical ingot 22 made of a semiconductor material. The concave surface 24 supporting the ingot 22 is provided on the upper surface, and the opposite side of the concave curved surface 24 is a base surface 20 as a flat surface. Here, the cell 19 refers to the cavity 16 in the case where the shape of the ceramic partition wall 17 seen in the cross section perpendicular to the direction Y of the ingot supporting jig 13 is a polygonal lattice shape over the entire direction Y. The outer wall 42 refers to a wall made of ceramics that constitutes the outer peripheral surface 40 of the honeycomb structure 18 in parallel to the direction Y.

  By adopting such a configuration, when the thin piece 46 is immersed in the high-temperature liquid 32 and the adhesive 28 is melted, the cell 19 has a polygonal cross section. Since the partition wall 17 is regularly formed in a polygonal lattice shape in the entire direction Y, and the variation in the thickness of the partition wall 17 can be reduced, the hollow structure 15 other than the honeycomb structure having the same thickness between the cavities 16 is formed. Compared with the ingot support jig 12, the cross-sectional area of the cells 19 can be made relatively large, so that the space between the cells 19 can be warmed in a particularly short time. As a result, since heat is transferred to the adhesive 28 in a shorter time, the time for separating the wafer 26 from the thin piece 46 can be further shortened. Further, since the ingot supporting jig 13 has the honeycomb structure 18, when stress is applied to the ingot supporting jig 13, this stress is distributed substantially uniformly over the plurality of partition walls 17 as a whole. As a result, the mechanical strength of the ingot supporting jig 13 is further improved by the function of preventing the local stress concentration from being applied to a part of the partition wall 17, and the distortion of the wafer 26 obtained by cutting the ingot 22 is improved. Becomes even smaller.

  Further, the ingot supporting jig 13 can regularly reduce the thickness variation of the partition wall 17 by forming the partition wall 17 in a polygonal lattice shape in a cross section perpendicular to the longitudinal direction Y over the entire longitudinal direction Y. The cutting resistance can be made smaller than that of the ingot supporting jig 12 made of the hollow structure 15 other than the honeycomb structure. By this action, the distortion of the obtained wafer 26 can be further reduced. When stress is applied to the ingot support jig 13, for the same reason as described above, the mechanical strength of the hollow structure 15 and the mechanical strength of the ingot support jig 13 are improved. The possibility of the jig breaking can be eliminated.

  Further, in the ingot supporting jig 13, the thickness T of the outer wall 42 of the honeycomb structure 18 is preferably 0.5 to 3 mm. The outer wall 42 needs to have a mechanical strength so that the ingot supporting jig 13 does not break due to the load of the ingot 22 or the stress received from the cutting blade 14 through the ingot 22. On the other hand, the outer wall 42 is cut by the outer wall 42. It is necessary to set so that the cutting resistance to the blade 14 does not increase. When the thickness T of the wall 42 is in the range of 0.5 to 3 mm, the mechanical strength of the outer wall 42 can be increased while suppressing an increase in the cutting resistance of the outer wall 42, and the destruction of the ingot supporting jig 13 can be further prevented. .

  The surface of the ingot 22 is not necessarily in a clean state, and in some cases there are fine irregularities, so a local load due to the load of the ingot 22 may partially act on the concave curved surface 24, and cutting In particular, since the load due to intensive stress is applied by the cutting blade 14, the concave curved surface 24 (main surface) of the ingot supporting jig 13 that is in direct contact with the wafer 26 is also the portion that requires the most strength. If the thickness T of the outer wall 42 is increased, the ingot 22 is placed on the concave curved surface 24 of the ingot support jig 13 in order to bond the ingot 22 to the ingot support jig 13 via the adhesive 28. In the case of cutting, it is possible to eliminate the possibility that the outer wall 42 is cracked or broken by the load of the ingot 22 or the stress received from the cutting blade 14.

  Further, the thickness T of the outer wall 42 is determined by the same method using a three-dimensional measuring machine as in the case of measuring the aperture ratio of the cavity 16 described above, and the inner wall of the partition wall 17 surrounding each outermost cell 19 is measured. The shortest distance between the wall surface and the outer peripheral surface 40 is obtained, and a value obtained by averaging these distances is defined as the thickness of the outer wall 42. When the shortest distance between the inner wall surface of the partition wall 17 surrounding each cell 19 and the outer peripheral surface 40 is the same, a surface that can connect these shortest distance points is considered. May be the thickness T of the outer wall 42.

  The ingot supporting jig 13 having such a honeycomb structure 18 has a larger cross-sectional area of the cavity 16 composed of the cells 19 than the ingot supporting jig 12 shown in FIG. The rate can be increased. Since the opening ratio can be set to 50 to 70% in the ingot supporting jig 13 having the honeycomb structure portion 18, the ingot 22 is cut and bonded to the wafer 26 as compared with the ingot supporting jig 12. When each of the flakes 46 is immersed in the hot liquid 32 and the adhesive 28 is melted, a sufficient amount of the hot liquid 32 is quickly supplied to each cell 19 so that the heat of the hot liquid 32 is increased. The wafer 26 can be separated from each thin piece 46 in a shorter time by the action that can be quickly transmitted to the adhesive 28 between each thin piece 46 and the wafer 26.

  In addition, the distortion of the obtained wafer 26 can be further reduced by the action of separating in a short time and suppressing the stress applied to the wafer 26. Furthermore, the separation of the wafer 26 from the thin piece 46 using the high-temperature liquid 32 is further facilitated and the separation time can be shortened, the ingot support jig 13 can be reduced in weight, and the cutting resistance received by the cutting blade 14 at the time of cutting. Can be reduced.

  The opening ratio of the cross section of the ingot supporting jig 13 having the honeycomb structure 18 is determined by bringing the contact probe into contact with the cross section of the ingot supporting jig 13 using the above-described three-dimensional measuring machine in the same manner. The area of the cell 19 in the entire cross section of the ingot support jig 13 is calculated by calculating the entire cross section of the ingot support jig 13 and the area of the cell 19 from the data obtained by taking the contacted part into the three-dimensional coordinates. (%) May be obtained as the aperture ratio (%).

  The average thickness of the ceramic partition walls 17 between the cavities 16 is preferably 0.1 to 1 mm. By setting the average thickness of the partition wall 17 to 0.1 to 1 mm, the cutting resistance at the time of cutting while maintaining the strength of the ingot supporting jig 13 can be maintained at a low state, so that the ingot supporting jig 13 may be destroyed. Can be further eliminated. Further, since the stress applied to the ingot 22 from the cutting blade 14 is reduced, the possibility that the wafer 26 is distorted can be eliminated.

  The average thickness of the partition wall 17 is obtained from the data obtained by bringing the contact probe into contact with the cross section of the ingot supporting jig 13 in the same manner using the above-described three-dimensional measuring machine and taking the contacted portion into the three-dimensional coordinates. The thicknesses of the partition walls 17 are calculated, and the average value of these thicknesses is taken as the average thickness of the partition walls 17.

Moreover, it is preferable that the thermal expansion coefficient of the ceramics constituting the hollow structure 15 is 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C. That is, if the thermal expansion coefficient of the ceramic is in the range of 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C., the thermal expansion coefficient of the ingot 22 is about 2 × 10 ^{−6 to} 6 × 10 ⁻⁶ / ° C. The ingot support jigs 12 and 13 and the ingot 22 are not severely expanded due to the heat generated when the ingot 22 is cut with a wire (not shown). Separation in the middle can be prevented, the processed thin piece 46 can be prevented from cracking, and at the same time, distortion of the wafer 26 can be eliminated.

The thermal expansion coefficient of the ceramics constituting the ingot supporting jigs 12 and 13 is measured as follows. First, cutting blades 14 are inserted parallel to the ingot supporting jigs 12 and 13 in the X, Y, and Z directions, respectively. For example, the thermal expansion coefficient is 5 mm in the X direction, 20 mm in the Y direction, and 5 mm in the Z direction. Cut out a sample for measurement. The coefficient of thermal expansion in the Y direction of the sample for measuring the coefficient of thermal expansion is determined in the Y direction at room temperature and at a temperature (about 90 to 300 ° C.) immersed in the high temperature liquid 32 after cutting the ingot supporting jigs 12 and 13. It is obtained by measuring the length. For example, when the length in the Y direction of the sample for measuring the thermal expansion coefficient is 90 ° C. and L ₁ (mm), and 300 ° C. and L ₁ (mm), the thermal expansion coefficient of 90 to 300 ° C. is (L ₁ −L) / { L (300-90)} (1 / ° C.).

  The thermal shock value of the hollow structure 15 is preferably 1000 ° C. or higher. Thereby, even if the high-temperature liquid 32 is caused to flow particularly rapidly, the ingot supporting jigs 12 and 13 can be prevented from being damaged by thermal shock. When the ingot supporting jigs 12 and 13 are damaged, the silicon wafer 26 may be cracked or broken by the stress generated at the time of the damage.

  The thermal shock value of the ingot supporting jigs 12 and 13 is measured as follows. Place the ingot support jigs 12 and 13 in an electric furnace, etc., raise the temperature to set the furnace temperature to H (° C.), hold it at H (° C.) for about 1 hour, take it out of the furnace, and immediately 20 ° C. The entire ingot supporting jigs 12 and 13 are submerged in water. Thereafter, the presence or absence of cracks in the ingot supporting jigs 12 and 13 is visually observed to check for cracks or cracks. The thermal shock value can be measured by the maximum value (° C.) of {the furnace temperature H (° C.) − The water temperature (° C.)} when there is no crack or crack.

  Next, the furnace temperature H (° C.) is increased by, for example, 25 ° C. or 50 ° C., and dropping in water is repeated until a crack is generated, and the temperature difference (H-20) (° C.) when the crack is generated is expressed as a thermal shock. Value. For example, after heating and holding at furnace temperatures of 1070 ° C, 1120 ° C and 1170 ° C, respectively, no cracks occur even when dropped into water at a water temperature of 20 ° C, and after holding at a furnace temperature of 1195 ° C, a water temperature of 20 ° C When cracks occur when dropped in water, the thermal shock value is 1170 ° C-20 ° C = 1150 ° C.

In addition, the ceramic constituting the hollow structure 15 is preferably made of cordierite. Thus, when cutting or removing the adhesive 28, these ceramics have a low coefficient of thermal expansion of about 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C., have an appropriate strength, and further have a cutting resistance. Therefore, it is possible to effectively prevent the occurrence of cracks or the like in the wafer 26 obtained by cutting.

Here, the cordierite is typically a ceramic having a composition represented by 2MgO · 2Al ₂ O ₃ · 6SiO ₂ . In particular, by using cordierite, the ingot supporting jigs 12 and 13 not only have sufficient mechanical strength to withstand the load of the large ingot 22, but also select ceramics with low cutting resistance. Since the cutting resistance applied to the cutting blade 14 at the time of cutting by the cutting blade 14 can be reduced, the wafer 26 can be cut out at high speed.

The cutting resistance is the same as that of other ceramics, but the coefficient of thermal expansion is as low as 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C., and it has moderate strength. Lithium aluminosilicate, phosphoric acid Examples thereof include zirconyl and potassium zirconyl phosphate, and even when these are used, generation of cracks or the like in the wafer 26 obtained by cutting can be effectively prevented. Here, the lithium _{aluminosilicate,} Li _{2 O-Al} a 2 O 3 -SiO ₂ based glass ceramics, for example, _{Li 2 O · Al 2 O 3} · 4SiO 2, Li 2 O · Al 2 O 3 · 6SiO There are _two compositions. Zirconyl phosphate is a ceramic having a composition represented by (ZrO) ₂ P ₂ O ₇ . Potassium zirconium phosphate is a ceramic having a composition represented by KZr ₂ (PO ₄ ) ₃ .

As the semiconductor material of the ingot 22, typical example Si (coefficient of thermal ^{expansion: 3 × 10 -6 / ℃)} , GaAs (: 6 × 10 -6 /℃),GaN(:5.6×10 -6 ^{/℃),GaP(:5.3×10 -6 /℃),InP:4.6×10 -6 /℃,InSb(:5.4×10 -6 /℃),SiGe(:2.6×10 -6} /℃~4.6 × 10 ⁻⁶ / ° C.). The ingot 22 made of silicon or the like is generally manufactured by a pulling method. However, since there are often dents, scratches and pinholes on the surface after the pulling, the entire longitudinal direction Y of the outer periphery of the ingot 22 is polished to make the outer diameter uniform. It is preferable to use what was cut into a length of, for example, 100 to 300 mm.

  Next, a method for manufacturing the ingot supporting jigs 12 and 13 will be described. First, ceramic raw material powder, water, and an organic binder are added and kneaded for 1 to 100 hours to prepare a clay. As the ceramic raw material powder, for example, when producing ingot supporting jigs 12 and 13 made of cordierite, powder obtained by pulverizing cordierite can be used, for example, magnesium oxide, A powder in which silicon oxide and aluminum oxide are mixed in a predetermined ratio that cordierite is generated can be used. Examples of the organic binder include PVA (polyvinyl alcohol) and PEG (polyethylene glycol). The organic binder is preferably 2 to 7 parts by mass with respect to 100 parts by mass of the ceramic raw material powder.

  Next, an ingot supporting jig 12 having a cavity 16 as shown in FIGS. 1A and 1B and a honeycomb-shaped ingot supporting jig 13 as shown in FIGS. 4A and 4B are obtained. The formed clay is extruded from the base and molded. Here, the die used for extruding the ingot supporting jig 12 having the hollow structure A of the present invention is orthogonal to the Y direction of the ingot supporting jig 12 as shown in FIGS. 1 (a) and 1 (b). In the cross section, the ingot supporting jig 12 having a round structure is formed in the cavity 16 and the outer shape has a concave curved surface 24 on the upper surface. Further, the die used for extruding the ingot supporting jig 13 has a rectangular shape of the cell 19 in a cross section perpendicular to the Y direction of the ingot supporting jig 13 as shown in FIGS. 4 (a) and 4 (b). The ingot supporting jig 13 having a polygonal structure such as that having an outer shape with a concave curved surface 24 on the upper surface was used. Then, the extruded clay is cut into a predetermined length in a direction parallel to the cross section perpendicular to the extruded direction to produce a molded body (not shown). As a result, it is possible to produce a molded body made of the ceramic clay hollow structure 15 having the concave curved surface 24 on the upper surface.

  Next, the molded body is sufficiently dried. Thereby, the water | moisture content contained in a molded object is evaporated without generating a crack, and also the molded object which has the intensity | strength which an operator can handle can be produced. In order to prevent cracks during drying, the drying temperature is preferably 40 to 80 ° C. And the organic binder contained in a dry body is heated and hold | maintained at 400-800 degreeC, an organic binder is removed, and a degreased body is produced. Subsequently, the degreased body is fired to produce ingot supporting jigs 12 and 13. As a result, the ingot supporting jigs 12 and 13 made of the ceramic hollow structure 15 having the concave curved surface 24 on the upper surface can be produced.

  Next, examples will be described. First, in order to produce the ingot supporting jigs 12 and 13 shown in FIGS. 1 and 4, 6 parts by mass of water, 3 parts by mass of PVA and 3 parts by mass of PEG as an organic binder are obtained with respect to 100 parts by mass of ceramic raw material powder. Was added and kneaded to prepare a clay. Then, this kneaded material was extruded using an extrusion molding machine, and molded bodies for obtaining ingot supporting jigs 12 and 13 were obtained. At this time, in order to extrude the shapes of the ingot supporting jigs 12 and 13, the ingot supporting jigs 12 and 13 are attached to the tips of the extrusion machines generally used in the ceramic extrusion method. Replaced and molded as obtained.

  And the molded object shape | molded at this time fully dried at 60 degreeC, and produced the dried body. Thereafter, the dried body is heated to 600 ° C. and held for 10 hours, the organic binder is removed, a degreased body is produced and fired, and X (width), Y (length), Z ( Sample No. shown in Table 1 having a thickness of 60 mm in width, 140 mm in length, and 18 mm in thickness. A plurality of ingot supporting jigs 12 and 13 were prepared. The curvature radius of the concave curved surface 24 was set to 38 mm, and the temperature shown in Table 1 was used as the firing temperature. Further, the hollow structure A shown in Table 1 shows a structure in which the outline of the cavity 16 is round in the cross section orthogonal to the Y direction of the ingot supporting jig 12 as shown in FIG. 1, and the hollow structure B is shown in FIG. In the cross section orthogonal to the Y direction, the outline of the cell 19 shows a quadrangular structure (honeycomb structure).

No. obtained The porosity of the samples 1 to 43 was measured by the Archimedes method as follows. No. Samples for measuring porosity having a concave surface 24 of 1 to 43, 30 mm in the width direction (X direction), 30 mm from the sample in the longitudinal direction (Y direction), and 10 mm in the thickness direction (Z direction) Was cut out. Here, a part of the concave curved surface 24 was formed on the porosity measurement sample. The porosity measurement sample was placed in a container, and water was placed in the container to immerse the porosity measurement sample in water. A porosity measurement sample immersed in water was placed in a vacuum vessel, and the inside of the vacuum vessel was held for 30 minutes while being reduced in pressure to 0.1 N / m ² or less by a vacuum pump.

Next, the weight (in water weight) W ₁ of the porosity measurement sample was measured while immersed in water at a water temperature of 25 ° C. After measuring the weight in water, the porosity measurement sample was taken out of the water, and further compressed air at a speed of 5 m / second was flown in the Y direction for 4 seconds to adhere to the outer surface or cavity (cell) of the porosity measurement sample. The weight W ₂ (saturated weight) after removing water droplets was measured. After the saturation weight measurement, the porosity measurement sample is dried at 100 ° C. for 1 hour to evaporate moisture contained in the porosity measurement sample, and the sample is then cooled in a glass container at a temperature of 25 ° C. and a humidity of 5% or less. did. Thereafter, the weight W ₃ (dry weight) of the porosity measurement sample was measured. Since the porosity of the sample for measuring the porosity needs to be corrected by the density of water (0.99704 g / cm ³ ) at 25 ° C., ((W ₂ −W ₃ ) / (W ₂ −W ₁ )) × 0.99704 × 100 (%).

  On the other hand, no. The strength (compressive strength) when a load is applied from the direction parallel to the longitudinal direction Y of the concave curved surfaces of the ingot supporting jigs 12 and 13 (Y direction in FIGS. 1 and 4) of samples 1 to 43 and broken. It was measured. The coefficient of thermal expansion and the thermal shock value at 90 to 300 ° C. were also measured by the method described in the best mode for carrying out the invention. Further, the opening ratio of the cross section of the ingot supporting jigs 12 and 13, the thickness T of the outer wall 42 of the ingot supporting jig 13, and the average thickness of the partition walls 17 were measured by the above-described method using a three-dimensional measuring machine.

  Next, the ingot supporting jigs 12 and 13 having the hollow structure A (the structure in which the outline of the cavity 16 has a round shape) and the hollow structure B (honeycomb structure), which are samples of the present invention, are used as the fixing jig 11 made of cordierite. The silicon ingot 22 having a diameter of 76 mm and a length of 140 mm was further bonded to the ingot supporting jigs 12 and 13 with a thermoplastic adhesive 28. Next, a cutting blade having a thickness of 0.2 mm is rotated at a rotational speed of 2000 rpm over the entire longitudinal direction Y of the ingot 22 and is sequentially cut into a thickness of 0.8 mm while moving at a feed rate of 2 mm / second. A plurality of wafers 26 were formed on the ingot supporting jigs 12 and 13. For each sample, the cutting resistance when cutting the ingot 22 together with the ingot supporting jigs 12 and 13 was measured using a 3-component dynamometer 9257B manufactured by Nippon Kisler Co., Ltd., and the maximum value was shown in Table 1. .

  While holding the obtained wafer 26 with a heat-resistant resin, it is placed in a high-temperature tank 44 containing 90 ° C. high-temperature liquid 32 (hot water) together with the thin pieces of the ingot supporting jigs 12 and 13 and the fixing jig 11. Immersion was performed, the adhesive 28 was melted, the wafer 26 was separated from the thin pieces of the ingot supporting jigs 12 and 13, and the wafer 26 was washed with pure water. The obtained wafer 26 was visually observed for cracks and cracks. Here, the separation time from when the wafer 26 was immersed in hot water at 90 ° C. together with the thin piece 46 of the ingot supporting jigs 12 and 13 until the wafer 26 was separated from the thin piece 46 was measured.

  Further, the distortion of the cut and washed wafer 26 was measured as follows using a contour shape measuring machine Surfcom 3000A manufactured by Tokyo Seimitsu Co., Ltd. That is, the wafer 26 is placed with one main surface facing down, the position of each part of the other main surface (upper surface) is measured by a laser interferometer, and the maximum height and minimum of each part of the other main surface are measured. The difference from the height was determined, and this difference was defined as distortion. The results are shown in Table 1.

  From the results in Table 1, the sample No. 1 to 21 and sample Nos. No. 22 to 43 were practically acceptable. In particular, the sample No. In Nos. 22 to 43, the compressive strength was 8 MPa or more, the cutting resistance was 60 N or less, practically no problem in handling and cutting work, and the separation time was as short as 35 seconds or less. Also, no cracks or cracks occurred, and the wafer distortion was as small as 0.04 mm or less. In particular, Sample No. with a cross-sectional aperture ratio of 30 to 70%. 22 to 27 and 30 to 38 had a separation time as short as 10 seconds or less, a wafer distortion as small as 0.04 mm, and a compressive strength as large as 11.5 to 24.9 MPa. Sample No. with a porosity of 30% by volume or more was used. 22 to 29, 32 to 35, and 43 had a cutting resistance as small as 21 N or less.

  It was confirmed that a sample having a cross-sectional aperture ratio of 30 to 70% can shorten the separation time, so that the distortion of the wafer can be particularly reduced and the compressive strength is particularly high. It was also confirmed that the ingot supporting jig having a porosity of 30% by volume or more can particularly reduce the cutting resistance. Also, sample No. made of cordierite. 1-4, 7-14, 22-25, 28-35, 43 had excellent thermal shock resistance of 1000 ° C. or more. That is, the ingot supporting jig made of cordierite was excellent in thermal shock resistance as compared to ingot supporting jigs of other materials.

As a comparative example, no. Samples as shown in 44 to 49 were prepared in the same manner as the ingot supporting jigs 12 and 13 described above by changing the die of the extrusion molding machine to a structure without a cavity (solid structure). Evaluation was performed in the same manner as in 1-43. As shown in Table 1, the result is No. 1 which is a sample outside the scope of the present invention. When using an ingot support jig of 44 to 49, the cutting resistance is large as 75N or more, cracks and cracks occur, the separation time exceeds 45 seconds, and the wafer distortion is as large as 0.25 mm or more. It was.

  As a result of these, the ingot support jig outside the scope of the present invention has a problem that the ingot support jig is liable to be cracked and cracked due to its high cutting resistance, and also the separation time increases. It has been found that the problem of increased distortion occurs.

  Next, sample no. Samples Nos. 23 to 27, 31, 32, 34, 38, 43 ingot support jig 13 were used as sample numbers. 50 to 59 were used, and the wafer 26 was cut out from the silicon ingot 22 in the same manner as in Example 1 except for the following conditions, and evaluated in the same manner as in Example 1. Here, the changed condition is that the methyl phenyl silicone oil heated to 250 ° C. is placed in the high temperature tank 44 shown in FIG. 3B to form a high temperature liquid 32 and fixed with an adhesive 28. The thin piece 46 of the tool 13 and the wafer 26 were placed in a hot liquid 32, and the hot liquid 32 was forcibly stirred using a stirring blade. The results are shown in Table 2.

  From the results in Table 2, the sample Nos. In the case of 50 to 52, 56, the separation time was 4 to 6 seconds, and the cross-sectional aperture ratio was less than 50% or more than 70%. In the case of 53 to 55 and 57 to 59, the separation time was 7 to 8 seconds, and the separation time was particularly short when the opening ratio of the cross section was in the range of 50 to 70%. In addition, the sample No. 2 in which the thickness T of the outer wall 42 is 3.5 mm. In No. 59, no crack or cracking of the wafer occurred, but the separation time was 9 seconds, and the separation time was longer when compared with a sample having a thickness T of the outer wall 42 of 3 mm or less. From this result, it was found that the thickness T of the outer wall 42 is preferably 3 mm or less in order to shorten the separation time particularly. Also, sample No. made of cordierite. When 50 to 52, 55, 57, and 59 were used, cracks did not occur in the obtained wafer 26, but sample Nos. Made of alumina were used. 53, sample no. 54, Sample No. consisting of potassium zirconyl phosphate. When 58 was used, slightly fine cracks were observed in one of the plurality of wafers 26 obtained, although it was at a satisfactory level.

On the other hand, by using cordierite as the material of the ingot supporting jig 13, even when the adhesive is rapidly melted using the high-temperature liquid 32 and the wafer 26 is separated from the thin piece 46, cracks in the wafer 26 are prevented. It was found that generation can be suppressed. Further, the sample No. 1 with a thin partition wall 17 having a thickness of 0.05 mm was used. Although no cracks were observed in the wafer 26 produced using 56, it was found that one of the thin pieces 46 was cracked. And even when the thickness of the partition wall 17 is as thin as 0.05 mm, the cracks of the wafer 26 can be suppressed, but since the thin piece 46 may break, it is understood that the thickness of the partition wall 17 is preferably larger than 0.05 mm. It was.

  As a result of these, when the average thickness between the cavities is 0.1 to 1 mm, it is possible to prevent cracking of the flakes, and when the outer wall thickness is 0.5 to 3 mm, the separation time can be particularly shortened. It can be seen that cracking of the wafer can be prevented.

Samples having a high thermal expansion coefficient were the same as in Example 1 except for the following conditions. No. 5 (thermal expansion coefficient 7.5 × 10 ⁻⁶ / ° C.), No. 13 (coefficient of thermal expansion 2.9 × 10 ⁻⁶ / ° C.) and 14 (coefficient of thermal expansion 1.2 × 10 ⁻⁶ / ° C.) was selected and sample No. 14 as the ingot supporting jig 12 was obtained in the same manner as these samples. 60, 61 and 62 are manufactured, the wafer 26 is cut out from the silicon ingot 22, and the wafer 26 is separated using methylphenyl silicone oil at 250 ° C. in the same manner as in Example 2. , Cracks, strains, and cracks in the flakes 46 were evaluated.

  The changed condition is that the size of the ingot supporting jig 12 is 200 mm in length (Y direction in FIG. 1), 80 mm in width (X direction in FIG. 1), 24 mm in thickness (Z direction in FIG. 1), and 24 The curvature radius was 51 mm. The ingot 22 was made of silicon having a diameter of 102 mm and a length of 200 mm. The feeding speed of the cutting blade 14 was 3 mm / second. Then, the ingot 22 was cut together with the ingot supporting jig 12, and the obtained wafer 26 was separated from the thin piece 46, and then the thin piece 46 was observed. The results are shown in Table 3.

From the results shown in Table 3, sample No. No cracks were observed in the flakes 46 obtained from Nos. 61 and 62. Cracks were observed in the flakes 46 obtained from 60. On the other hand, sample No. The wafer produced using 60-62 did not generate cracks or cracks. Sample No. The wafer 26 produced using 61 and 62 had a distortion as small as 0.03 mm. The wafer 26 produced using No. 60 has a distortion of 0.08 mm. The distortion was larger than that of wafer 26 produced using 61 and 62. Sample No. In the case of using 61 and 62, the separation time was as short as 8 to 10 seconds. When 60 was used, the separation time was as long as 18 seconds, and when the ingot 22 was large, the separation time tended to be long when the ingot supporting jig 12 having a high thermal expansion coefficient was used.

As a result, it has been found that the jig for supporting an ingot of the present invention does not cause cracks or cracks in the wafer even when a wafer is manufactured by cutting a large ingot at a particularly high speed. Moreover, when the thermal expansion coefficient of the ingot supporting jig is in the range of 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C., even when a wafer produced using a large ingot is separated from the thin piece, It was confirmed that it did not break.

(A) is a perspective view of an ingot supporting jig showing an example of the present invention, and (b) is an enlarged sectional view taken along line A-A ′ of (a). (A) is a perspective view showing a fixing jig and an ingot for fixing the ingot supporting jig of the present invention, (b) is a side view showing a state where the ingot and the ingot supporting jig are bonded to the fixing jig. FIG. 4C is a cross-sectional view showing a cross section taken along the line CC ′ of FIG. (A) is the schematic diagram which cut out the ingot in the shape of a wafer, (b) is a perspective view which fractures | ruptures and shows a part of the state which supplied the jig for ingot support of (a) in the liquid of a high temperature tank. . (A) is a perspective view which shows another example of the jig for ingot support of this invention, (b) is sectional drawing to which the cross section in the B-B 'line | wire of (a) was expanded. It is a perspective view which shows the structure which fixed the conventional ingot, the ingot support jig | tool, and the fixing jig. (A) is a perspective view showing a state in which an ingot is bonded and fixed to a concave curved surface of a conventional ingot supporting jig, and is cut into a wafer shape, and (b) is a wafer immersed in a high-temperature bath connected to the cut thin piece. It is a schematic diagram which shows a state.

Explanation of symbols

11: Fixing jig
12, 13: Ingot support jig
14: Cutting blade
15: Hollow structure
16: Cavity
17: Bulkhead
18: Honeycomb structure
19: Cell
20: Base surface
22: Ingot
24: Concave surface
26: Wafer
28, 29: Adhesive
32: Hot liquid
40: Outer surface
42: Exterior wall
44: High temperature bath
46: Thin piece T: Thickness of outer wall

Claims (7)

A ceramic hollow structure having a concave curved surface for supporting the ingot along the surface shape of a cylindrical ingot made of a semiconductor material on the upper surface and having a plurality of cavities extending along the longitudinal direction of the concave curved surface. The plurality of cavities have substantially the same cross-sectional shape orthogonal to the longitudinal direction. 2. The ingot supporting jig according to claim 1, wherein the hollow structure has an opening ratio of 30 to 70% in the cross section perpendicular to the longitudinal direction of the cavity. 2. The ingot supporting jig according to claim 1, wherein the ceramic is a porous body having a porosity of 30 to 70% by volume. The hollow structure includes a honeycomb structure part in which a plurality of the cavities each serve as a flow path through which a fluid flows, and a cross-sectional shape perpendicular to the longitudinal direction of the cavities constitutes a honeycomb cell, and the honeycomb structure part The ingot supporting jig according to any one of claims 1 to 3, further comprising an outer wall disposed on an outer periphery and constituting an outer peripheral surface of the hollow structure. The ingot supporting jig according to claim 4, wherein an average thickness between the cavities is 0.1 to 1 mm. 6. The ingot supporting jig according to claim 1, wherein the ceramic has a thermal expansion coefficient of 1 × 10 ^{−6 to} 3 × 10 ⁻⁶ / ° C. ⁶ . The ingot supporting jig according to claim 1, wherein the ceramic is made of cordierite.

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