JP2007115390A - メモリ機器、データを転送する方法、およびデータを格納する方法 - Google Patents

メモリ機器、データを転送する方法、およびデータを格納する方法 Download PDF

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Publication number
JP2007115390A
JP2007115390A JP2006268644A JP2006268644A JP2007115390A JP 2007115390 A JP2007115390 A JP 2007115390A JP 2006268644 A JP2006268644 A JP 2006268644A JP 2006268644 A JP2006268644 A JP 2006268644A JP 2007115390 A JP2007115390 A JP 2007115390A
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Japan
Prior art keywords
memory
data
error correction
bank
correction code
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JP2006268644A
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Japanese (ja)
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JP2007115390A5 (enExample
Inventor
Rodger D Haugan
ロジャー・ディ・ホーガン
Galen G Kerber
ガレン・ジィ・カーバー
David P Haldeman
デイビッド・ピィ・ホールドマン
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Quantum Corp
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Quantum Corp
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Publication of JP2007115390A publication Critical patent/JP2007115390A/ja
Publication of JP2007115390A5 publication Critical patent/JP2007115390A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Error Detection And Correction (AREA)
  • Dram (AREA)
JP2006268644A 2005-09-30 2006-09-29 メモリ機器、データを転送する方法、およびデータを格納する方法 Pending JP2007115390A (ja)

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US72272205P 2005-09-30 2005-09-30

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JP2007115390A true JP2007115390A (ja) 2007-05-10
JP2007115390A5 JP2007115390A5 (enExample) 2009-11-12

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US (1) US7676730B2 (enExample)
EP (1) EP1777624A3 (enExample)
JP (1) JP2007115390A (enExample)

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KR20150070252A (ko) * 2012-10-11 2015-06-24 어드밴스드 마이크로 디바이시즈, 인코포레이티드 높은 신뢰도 메모리 컨트롤러
EP2924576A1 (en) 2014-03-28 2015-09-30 Fujitsu Limited Storage control apparatus, control program, and control method
CN110990186A (zh) * 2018-10-02 2020-04-10 三星电子株式会社 片上系统、操作片上系统的方法和存储系统

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US8386676B2 (en) * 2007-06-05 2013-02-26 Intel Corporation Systems, methods, and apparatuses for transmitting data mask bits to a memory device
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CN102045478B (zh) * 2009-10-23 2013-05-01 精工爱普生株式会社 图像读取装置、校正处理方法及用该装置的图像处理方法
WO2011062825A2 (en) 2009-11-20 2011-05-26 Rambus Inc. Bit-replacement technique for dram error correction
US8484536B1 (en) * 2010-03-26 2013-07-09 Google Inc. Techniques for data storage, access, and maintenance
US8719675B1 (en) 2010-06-16 2014-05-06 Google Inc. Orthogonal coding for data storage, access, and maintenance
US8612676B2 (en) 2010-12-22 2013-12-17 Intel Corporation Two-level system main memory
US8644104B2 (en) 2011-01-14 2014-02-04 Rambus Inc. Memory system components that support error detection and correction
US8694857B2 (en) * 2011-04-13 2014-04-08 Inphi Corporation Systems and methods for error detection and correction in a memory module which includes a memory buffer
US8621317B1 (en) 2011-07-25 2013-12-31 Google Inc. Modified orthogonal coding techniques for storing data
US8615698B1 (en) 2011-09-28 2013-12-24 Google Inc. Skewed orthogonal coding techniques
WO2013048493A1 (en) 2011-09-30 2013-04-04 Intel Corporation Memory channel that supports near memory and far memory access
US9189329B1 (en) * 2011-10-13 2015-11-17 Marvell International Ltd. Generating error correcting code (ECC) data using an ECC corresponding to an identified ECC protection level
US8959417B2 (en) 2011-11-23 2015-02-17 Marvell World Trade Ltd. Providing low-latency error correcting code capability for memory
US9753858B2 (en) 2011-11-30 2017-09-05 Advanced Micro Devices, Inc. DRAM cache with tags and data jointly stored in physical rows
US8856619B1 (en) 2012-03-09 2014-10-07 Google Inc. Storing data across groups of storage nodes
US9391637B2 (en) 2012-03-30 2016-07-12 Intel Corporation Error correcting code scheme utilizing reserved space
US8694862B2 (en) * 2012-04-20 2014-04-08 Arm Limited Data processing apparatus using implicit data storage data storage and method of implicit data storage
US8949698B2 (en) * 2012-09-27 2015-02-03 Intel Corporation Method, apparatus and system for handling data faults
US9734921B2 (en) 2012-11-06 2017-08-15 Rambus Inc. Memory repair using external tags
KR101767018B1 (ko) 2013-09-27 2017-08-09 인텔 코포레이션 비휘발성 메모리에서의 오류 정정
DE102016123247B4 (de) 2015-12-01 2024-03-21 Nvidia Corporation Systeme und verfahren zur speicherverwaltung
KR102766654B1 (ko) * 2016-11-16 2025-02-12 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템
US10606696B2 (en) 2017-12-04 2020-03-31 International Business Machines Corporation Internally-generated data storage in spare memory locations
US20190243566A1 (en) * 2018-02-05 2019-08-08 Infineon Technologies Ag Memory controller, memory system, and method of using a memory device
US11119909B2 (en) 2018-12-11 2021-09-14 Texas Instmments Incorporated Method and system for in-line ECC protection
US20200097362A1 (en) 2019-11-29 2020-03-26 Intel Corporation Methods and apparatus for reducing microbumps for inter-die double-data rate (ddr) transfer
US11144383B2 (en) * 2020-03-10 2021-10-12 Sap Se Platform for automated administration and monitoring of in-memory systems
CN114756403B (zh) * 2022-04-25 2023-03-14 电子科技大学 一种基于网络编码的ram利用率提升方法
US12216521B2 (en) * 2022-08-12 2025-02-04 Micron Technology, Inc. Common rain buffer for multiple cursors
US12504876B2 (en) * 2023-05-19 2025-12-23 Qualcomm Incorporated Flexible metadata regions for a memory device

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US7117421B1 (en) * 2002-05-31 2006-10-03 Nvidia Corporation Transparent error correction code memory system and method
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KR100482380B1 (ko) * 2002-11-11 2005-04-14 (주)실리콘세븐 메모리 뱅크별 기입 동작의 수행이 가능한 에스램 호환 메모리 및 그 구동방법
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7996712B2 (en) 2008-02-20 2011-08-09 Hitachi, Ltd. Data transfer controller, data consistency determination method and storage controller
KR20150070252A (ko) * 2012-10-11 2015-06-24 어드밴스드 마이크로 디바이시즈, 인코포레이티드 높은 신뢰도 메모리 컨트롤러
KR101626040B1 (ko) 2012-10-11 2016-06-13 어드밴스드 마이크로 디바이시즈, 인코포레이티드 높은 신뢰도 메모리 컨트롤러
EP2924576A1 (en) 2014-03-28 2015-09-30 Fujitsu Limited Storage control apparatus, control program, and control method
US9639417B2 (en) 2014-03-28 2017-05-02 Fujitsu Limited Storage control apparatus and control method
CN110990186A (zh) * 2018-10-02 2020-04-10 三星电子株式会社 片上系统、操作片上系统的方法和存储系统
KR20200038145A (ko) * 2018-10-02 2020-04-10 삼성전자주식회사 메모리 이용 효율을 향상한 보안 처리기를 포함하는 시스템 온 칩, 메모리 시스템 및 시스템 온 칩의 동작방법
KR102557993B1 (ko) * 2018-10-02 2023-07-20 삼성전자주식회사 메모리 이용 효율을 향상한 보안 처리기를 포함하는 시스템 온 칩, 메모리 시스템 및 시스템 온 칩의 동작방법
CN110990186B (zh) * 2018-10-02 2024-09-13 三星电子株式会社 片上系统、操作片上系统的方法和存储系统

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US20070079217A1 (en) 2007-04-05
EP1777624A2 (en) 2007-04-25
US7676730B2 (en) 2010-03-09
EP1777624A3 (en) 2012-03-21

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