JP2007113032A5 - - Google Patents

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Publication number
JP2007113032A5
JP2007113032A5 JP2005303134A JP2005303134A JP2007113032A5 JP 2007113032 A5 JP2007113032 A5 JP 2007113032A5 JP 2005303134 A JP2005303134 A JP 2005303134A JP 2005303134 A JP2005303134 A JP 2005303134A JP 2007113032 A5 JP2007113032 A5 JP 2007113032A5
Authority
JP
Japan
Prior art keywords
sputtering
sintering
plane orientation
powder
electric current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005303134A
Other languages
English (en)
Japanese (ja)
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JP2007113032A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005303134A priority Critical patent/JP2007113032A/ja
Priority claimed from JP2005303134A external-priority patent/JP2007113032A/ja
Publication of JP2007113032A publication Critical patent/JP2007113032A/ja
Publication of JP2007113032A5 publication Critical patent/JP2007113032A5/ja
Pending legal-status Critical Current

Links

JP2005303134A 2005-10-18 2005-10-18 Ruスパッタリング用ターゲット材 Pending JP2007113032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005303134A JP2007113032A (ja) 2005-10-18 2005-10-18 Ruスパッタリング用ターゲット材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005303134A JP2007113032A (ja) 2005-10-18 2005-10-18 Ruスパッタリング用ターゲット材

Publications (2)

Publication Number Publication Date
JP2007113032A JP2007113032A (ja) 2007-05-10
JP2007113032A5 true JP2007113032A5 (enExample) 2008-10-30

Family

ID=38095498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005303134A Pending JP2007113032A (ja) 2005-10-18 2005-10-18 Ruスパッタリング用ターゲット材

Country Status (1)

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JP (1) JP2007113032A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5616265B2 (ja) * 2011-03-25 2014-10-29 Hoya株式会社 薄膜の成膜方法、マスクブランクの製造方法及び転写用マスクの製造方法
EP3243914B1 (de) * 2016-05-13 2018-10-17 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung von partikulärem ruthenium
CN111270210B (zh) * 2020-03-17 2021-11-12 贵研铂业股份有限公司 一种晶粒高定向取向的钌溅射靶材及其制备方法
CN116875952B (zh) * 2023-07-10 2025-06-13 云南贵金属实验室有限公司 一种低氧高密度Ru溅射靶材、制备方法及其用途

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4342639B2 (ja) * 1999-06-02 2009-10-14 株式会社東芝 スパッタリングターゲット、および電極膜の製造方法
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
JP4503817B2 (ja) * 2000-11-30 2010-07-14 株式会社東芝 スパッタリングターゲットおよび薄膜
JP2004156114A (ja) * 2002-11-07 2004-06-03 Sumitomo Metal Mining Co Ltd 高純度ルテニウムスパッタリングターゲットの製造方法及びそれにより得られたターゲット
JP2005113174A (ja) * 2003-10-03 2005-04-28 Tanaka Kikinzoku Kogyo Kk スパッタリング用ルテニウムターゲット及びスパッタリング用ルテニウムターゲットの製造方法

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